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Rozprawy doktorskie na temat „Photoluminescence”

Autor: Grafiati
Data publikacji: 4 czerwca 2021
Data aktualizacji: 25 lipca 2025

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1

Chiu, Sheng-Kuei. "Photoluminescent Silicon Nanoparticles: Fluorescent Cellular Imaging Applications and Photoluminescence (PL) Behavior Study." PDXScholar, 2015. http://pdxscholar.library.pdx.edu/open_access_etds/2455.

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Molecular fluorophores and semiconductor quantum dots (QDs) have been used as cellular imaging agents for biomedical research, but each class has challenges associated with their use, including poor photostability or toxicity. Silicon is a semiconductor material that is inexpensive and relatively environmental benign in comparison to heavy metal-containing quantum dots. Thus, red-emitting silicon nanoparticles (Si NPs) are desirable to prepare for cellular imaging application to be used in place of more toxic QDs. However, Si NPs currently suffer poorly understood photoinstability, and further
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2

Vijh, Uma Parvathy. "Photoluminescence by Interstellar Dust." See Full Text at OhioLINK ETD Center (Requires Adobe Acrobat Reader for viewing), 2005. http://www.ohiolink.edu/etd/view.cgi?toledo1122478565.

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Thesis (Ph.D.)--University of Toledo, 2005.<br>Typescript. "A dissertation [submitted] as partial fulfillment of the requirements of the Doctor of Philosophy degree in Physics." Bibliography; leaves 209-225.
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3

Al-Ajili, Adwan Nayef Hameed. "Photoluminescence of nanostructured silicon." Thesis, Loughborough University, 1996. https://dspace.lboro.ac.uk/2134/26999.

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The photoluminescence (PL) emitted by porous silicon has been investigated under different conditions of excitation using a pulsed nitrogen laser source, and the continuous tunable DV synchrotron source at Daresbury Laboratory. The project involved sample preparation, and PL measurements using a custom-built optical laser-based system for lifetime measurements. This in itself necessitated software and hardware development to enable interfacing and data-logging using an IBM-compatible PC. The equipment development formed a major part of the project.
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4

Xiao, Bin, and 肖斌. "Photoluminescence study of ZnO materials." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2011. http://hub.hku.hk/bib/B47153593.

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　Zinc oxide (ZnO) is a wide band gap (3.4eV at 300K) II-VI semiconductor with an exciton binding energy up to 60meV and is promising in the realization of excitonic or polaritonic lasing effect. Photoluminescence is widely used in studying the band gap and defect levels of ZnO. However, understanding in defects of ZnO is still far from satisfaction and remains controversial. Different authors suggest different explanations and mechanisms. 　In the present study we investigate in the photoluminescence spectra of four kinds of ZnO single crystal, namely as-grown (not implanted) Zn-face polished
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5

Alrrshedan, Marrwa. "Photoluminescence from Bulk GaN Substrates." VCU Scholars Compass, 2012. http://scholarscompass.vcu.edu/etd/2802.

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Photoluminescence (PL) has been studied from different types of bulk GaN samples grown by hydride vapor phase epitaxy technique at Kyma Technologies. Point defects in bulk and at the surface affect the electrical and optical properties of GaN and could be analyzed by PL. The surface of the samples was polished with different techniques: one is chemical mechanical polish (CMP) and another is mechanical polish (MP). PL data from MP and CMP surfaces show that PL intensity from the CMP-treated surface is much higher than that from the MP-treated surface. This can be explained by defects formed dur
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6

Zheng, Wan Hua. "Photoluminescence study of porous silicon." HKBU Institutional Repository, 1998. http://repository.hkbu.edu.hk/etd_ra/138.

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Ngan, Mei Lun. "Photoluminescence excitation of porous silicon." HKBU Institutional Repository, 1998. http://repository.hkbu.edu.hk/etd_ra/139.

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8

Faklaris, Orestis. "Photoluminescent diamond nanoparticles as labels in cells : study of their optical properties and investigation of their cellular uptake mechanism." Cachan, Ecole normale supérieure, 2009. http://tel.archives-ouvertes.fr/tel-00439561/fr/.

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Ce travail de thèse porte sur l'utilisation des NanoDiamants Photoluminescents (NDPs) pour des applications en bio-imagerie. Les nanodiamants (NDs) sont photoluminescents grâce à la présence de centres colorés azote-lacune (NV) dans leur maille cristalline. Le manuscrit est divisé en deux parties. La première concerne l'étude des propriétés optiques des centres colorés NV dans des NDs. Après l'optimisation de la concentration des centres NV, nous comparons la photoluminescence des NDPs à celle des nanoparticules semi-conductrices commerciales; nous concluons qu'elle peut être équivalente, même
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9

Wilde, Fabian. "Unidirectional photoluminescence emission of pierced microdisks /." München : Dr. Hut Verlag, 2009. http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&doc_number=017120456&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA.

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10

Seyhan, Ayse. "Photoluminescence Specroscopy Of Cds And Gase." Master's thesis, METU, 2003. http://etd.lib.metu.edu.tr/upload/1258383/index.pdf.

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With the use of photoluminescence (PL) spectroscopy one can able to get a great deal of information about electronic structure and optical processes in semiconductors by the aid of optical characterization. Among various compound semiconductors, Cadmium Sulfide (CdS) and Gallium Selenide (GaSe) are interesting materials for their PL emissions. Particularly, due to its strong anisotropy, investigation of GaSe necessitates new experimental approaches to the PL technique. We have designed, fabricated and used new experimental set-up for this purpose. In this thesis, we have investigated the PL sp
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11

Ratmann, Cristiane Wienke Raubach. "Metal sulfides: photoluminescence and photocatalytic properties." Universidade Federal de São Carlos, 2013. https://repositorio.ufscar.br/handle/ufscar/6279.

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Made available in DSpace on 2016-06-02T20:34:46Z (GMT). No. of bitstreams: 1 5401.pdf: 5113907 bytes, checksum: bc63a1e068663b50eac2b2108398f3f0 (MD5) Previous issue date: 2013-08-30<br>Universidade Federal de Minas Gerais<br>In this work we report an experimental and theoretical study of photoluminescence (PL) and photocatalytic activity of pure metal sulfides and systems furnished prepared by microwave assisted solvothermal (MAS) method. The theoretical model of the decorated system was created in order to analyze the electronic transition, especially in their interfaces. The results show
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12

Mosor, Sorin. "Photoluminescence of Quantum Confined Semiconductor Structures." Diss., Tucson, Arizona : University of Arizona, 2005. http://etd.library.arizona.edu/etd/GetFileServlet?file=file:///data1/pdf/etd/azu%5Fetd%5F1309%5F1%5Fm.pdf&type=application/pdf.

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13

Makuc, Boris. "Photoluminescence of ZnSe grown by MOVPE." Thesis, McGill University, 1988. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=61819.

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14

Gower, Joanne Elizabeth. "Photoluminescence of point defects in silicon." Thesis, King's College London (University of London), 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.300758.

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15

Sun, Ye. "Synthesis and photoluminescence of ZnO nanostructures." Thesis, University of Bristol, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.440141.

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16

House, Jody L. (Jody Lee) 1970. "Optical characterization of ZnSe by photoluminescence." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/36430.

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17

Wilkinson, Victoria Ailsa. "High pressure photoluminescence of semiconductor structures." Thesis, University of Surrey, 1990. http://epubs.surrey.ac.uk/844514/.

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High pressure photoluminescence has been used to study semiconductor structures. The measurements have been made in a miniature cryogenic diamond anvil cell (DAC). The results reported cover a wide range of materials and many different aspects are discussed. This in part serves to demonstrate the versatility and importance of the technique. New developments in DAC technology are fully described, in particular the introduction of electrical feedthroughs and the importance of the gasket geometry. The technologically important material system GaAs/AlXGa1-X As has been studied under hydrostatic pr
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18

Lefez, Benoît. "Caractérisation d'oxydes de cuivre par photoluminescence." Rouen, 1991. http://www.theses.fr/1991ROUES047.

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La caractérisation d'oxydes de cuivre par photoluminescence a nécessité le développement d'un spectrofluorimètre. La sensibilité de la méthode a été testée sur des échantillons non-stoichiométriques. La corrélation de données obtenues par différentes méthodes optiques (spectroscopie de réflexion dans l'ultraviolet proche infrarouge, photoluminescence) a permis de préciser les domaines énergétiques mis en jeu lors des transferts radiatifs. La structure et la composition d'un film d'oxydation multicouches ont été établies (spectroscopie dans l'infrarouge, microsonde de Castaing). Un oxyde de cui
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19

Islangulov, Radiy Rashitovich. "Low Power Photoluminescence and Photochemical Upconversion." Bowling Green State University / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1162244082.

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20

Olsen, Anita. "Thermal Quenching of Photoluminescence from GaN." VCU Scholars Compass, 2012. http://scholarscompass.vcu.edu/etd/2796.

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GaN is a III-V semiconductor that is a promising material used in production of light emitting devices and high power/high frequency electronics. The electronic and optical properties of GaN are subdued by defects that occur during the growth processes of this material. The emitted photoluminescence (PL) from optically excited GaN gives insight into the origins and effects of point defects within the crystal lattice structure of GaN. In this study, PL spectroscopy is used to examine and analyze the point defects that occur in Zn-doped GaN. The blue luminescence band seen in undoped and Zn-dope
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21

Jain, Swati. "Photoluminescence study of cadmium zinc telluride." Morgantown, W. Va. : [West Virginia University Libraries], 2001. http://etd.wvu.edu/templates/showETD.cfm?recnum=1876.

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Thesis (M.S.)--West Virginia University, 2001.<br>Title from document title page. Document formatted into pages; contains x, 84 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 79-83).
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22

Patel, Bhavnesh. "Photoluminescence and kinetics of zinc oxide doped with rare earths." Ohio : Ohio University, 1998. http://www.ohiolink.edu/etd/view.cgi?ohiou1176402695.

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23

Pemasiri, Karunananda. "Investigation of zincblende, wurtzite, and mixed phase InP nanowires by photocurrent, photoluminescence and time-resolved photoluminescence spectroscopies." University of Cincinnati / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1377873494.

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24

Zhao, Shen. "Propriétés optiques de nanorubans et boites quantiques de graphène." Thesis, Université Paris-Saclay (ComUE), 2018. http://www.theses.fr/2018SACLN032/document.

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Ce manuscrit présente une étude expérimentale sur les propriétés optiques des nanorubans de graphène (acronyme anglais : GNRs) et des boites quantiques de graphène (acronyme anglais : GQDs) synthétisés par la chimie ascendante.Pour la partie sur les GNRs, les spectres d'absorption et de photoluminescence ainsi que les mesures de la durée de vie sur la dispersion impliquent la formation d'états excimères résultant de l'agrégation des GNRs. Au moyen de la microscopie confocale et de la microscopie à force atomique, nous observons l'émission de petits agrégats de GNRs confirmant leur capacité à é
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25

Feng, Lin. "Photoluminescence studies of single zinc oxide nanostructures /." View abstract or full-text, 2010. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202010%20FENG.

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26

Mbulanga, Crispin Munyelele. "Defect-related photoluminescence of zinc oxide nanorods." Thesis, Nelson Mandela Metropolitan University, 2015. http://hdl.handle.net/10948/10318.

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In this dissertation, Zinc oxide (ZnO) nanorods grown by a two-step chemical bath deposition method on Si substrate is characterized. Research was conducted on ZnO nanorods for the understanding of their optical properties at room temperature (RT), with the emphasis on the visible luminescence. To this end, controlled thermal treatments of as-grown ZnO nanorods were conducted under different conditions, such as annealing time and environment, at atmospheric pressure. Results related to the following studies are reported: an investigation of the structure of ZnO nanorods, an analysis of the che
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27

Degliame, Gary. "Thermométrie par photoluminescence, application en micro/nanothermique." Thesis, Reims, 2017. http://www.theses.fr/2017REIMS021/document.

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Ce travail de thèse porte sur l’étude de la photoluminescence de microcristaux en vue de concevoir une sonde hybride permettant des mesures de la température et de la conductivité thermique d’un échantillon aux micro/nano-échelles. Pour cela, une sonde thermorésistive en Wollaston, utilisée en microscopie thermique (SThM), a été couplée à un microcristal de Cd0.7Sr0.3F2 (4% Er3+) dopé Erbium dont le spectre d’émission est sensible à la température. Dans un premier temps, les propriétés optiques du cristal massif ont été étudiées en vue de son application en thermométrie. Nous avons travaillé à
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28

Harrison, Dale A. "Photoluminescence spectroscopy of D§- states in GaAs." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape15/PQDD_0006/NQ37711.pdf.

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29

Dybiec, Maciej. "Spatially resolved photoluminescence spectroscopy of quantum dots." [Tampa, Fla] : University of South Florida, 2006. http://purl.fcla.edu/usf/dc/et/SFE0001767.

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30

McGhee, Ewan James. "The photoluminescence spectroscopy of single quantum dots." Thesis, Heriot-Watt University, 2004. http://hdl.handle.net/10399/1116.

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Winser, Andrew James. "Photoluminescence studies of arsenic-doped gallium nitride." Thesis, University of Nottingham, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.405387.

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Toft, Ian. "Fibre optic micro-photoluminescence of quantum nanostructures." Thesis, University of Cambridge, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.614103.

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Starck, Christophe. "Caractérisation de doubles hétérostructures laser par photoluminescence." Toulouse, INSA, 1990. http://www.theses.fr/1990ISAT0008.

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Ce memoire presente la mise au point d'une methode de caracterisation de doubles heterostructures laser gainasp/inp realisees par epl et ejm. Cette methode repose sur la determination semi-quantitative du rendement de photoluminescence de la couche active mesure dans des conditions d'injection proches du seuil laser. Nous precisons les conditions experimentales (excitation directe de la couche active, p=10#4 w/cm#2) permettant de generer une densite de porteurs voisine du seuil et montrons que la mesure du rendement dans ces conditions permet de prevoir la densite de courant de seuil des laser
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34

Shevchenko, D., V. V. Kononets, D. Dobrovolskas, et al. "Photoluminescence Inhomogeneity of LGSO : Ce Scintillator Crystal." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35261.

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Spatial distribution of photoluminescence (PL) parameters in Lu2SiO5 : Ce (LSO : Ce) and Lu2xGd2 – 2xSiO5 : Ce (LGSO : Ce) are investigated using confocal microscopy. The PL spectra of both crys-tals are dominated by a single band peaked at 510 nm. A low intensity sub-band peaked at 600 nm is observed in LGSO:Ce. Spatial inhomogeneities down to submicron size are observed in spectral center of mass mapping images of LGSO : Ce while the spatial distributions of spectrally-integrated PL intensity and PL peak position showed no large variations. The inhomogeneities in LGSO : Ce are caused by the
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35

Tsagli, Kelvin Xorla. "Temperature Dependence of Photoluminescence Spectra in Polystyrene." University of Akron / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=akron1625744248503334.

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36

Johnson, Matthew Bruce McGill T. C. McGill T. C. "Ultrafast time-resolved photoluminescence studies of GaAs /." Diss., Pasadena, Calif. : California Institute of Technology, 1989. http://resolver.caltech.edu/CaltechETD:etd-02062007-105824.

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37

Sun, Yuxuan. "Setup for Micro Photo- and Electro-Luminescence of Optoelectronic Device Structures." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-175708.

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Photoluminescence (PL) is an optical emission induced by photon absorption in a material where electrons are excited from the ground state to excited states, then relax to the lowest excited states and recombine radiatively. The PL emission provides vital information on bandgap energy, material purity and crystal quality. In this project, a PL characterization system, also capable of electroluminescence (EL) measurements, was designed and assem- bled to measure optoelectronic device structures with the capabilities of recording PL or EL spectra as well as micrometer-resolved PL or EL maps on d
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38

Vautravers, Nicolas R. "Polyhedral oligomeric silsesquioxanes in catalysis and photoluminescence applications." Thesis, St Andrews, 2009. http://hdl.handle.net/10023/729.

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39

Skarpeteig, Jon. "Cryogenic micro-photoluminescence of silicon solar cell materials." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for elektronikk og telekommunikasjon, 2010. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-11106.

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A literature review of relevant luminescence spectra for silicon solar cell materials has been performed. Three multi crystalline silicon samples in particular has been the focus of attention, one electronic grade sample R6, and two solar grade samples ES1, and MH2, where MH2 has added chromium. A list of relevant luminescence spectra has been compiled, and can be found in the appendix.The samples was measured using low temperature micro photoluminescence. They where cooled down by liquid helium in a cryostat, and excited using a laser. Photoluminescence was captured by a camera mounted on a s
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40

Crandles, David A. "Photoconductivity and photoluminescence in ZnIn(2)S(4)." Thesis, University of Ottawa (Canada), 1985. http://hdl.handle.net/10393/4565.

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41

Song, Young Wook. "Photoluminescence of InN with Mg and Zn Dopants." Thesis, University of Canterbury. Physics and Astronomy, 2008. http://hdl.handle.net/10092/1638.

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The optical properties of Mg-doped InN thin films grown on YSZ substrates have been investigated by photoluminescence (PL). A series of InN:Mg samples with various Mg cell temperatures (TMg) were produced by molecular beam epitaxy. The effect of Mg concentration on PL emission properties have been explored by various excitation power and temperature dependent measurements. The PL spectra as a function of excitation power exhibited a pronounce blueshift, indicating prominent band filling caused by the Burstein-Moss effect. Meanwhile, a typical redshift was observed as temperature increased due
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Thảo. "Photoluminescence spectroscopy on erbium-doped and porous silicon." Amsterdam : Amsterdam : [s.n.] ; Universiteit van Amsterdam [Host], 2000. http://dare.uva.nl/document/83659.

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Song, Young-Wook. "Photoluminescence of High Quality Epitaxial p-type InN." Thesis, University of Canterbury. Physics and Astronomy, 2013. http://hdl.handle.net/10092/8101.

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Indium nitride (InN) is a group III-V semiconductor that is part of the Al,Ga:N family. It is an infrared bandgap semiconductor with great potential for use in photovoltaic applications. Being an intrinsically n-type material, p-type doping is naturally one of the ongoing hot topics in InN research, which is of interest in the fabrication of pn junctions. Plasma-assisted molecular beam epitaxy (PAMBE) grown Mg doped InN thin film was investigated via systematic optical characterizations. Photoluminescence (PL) measurement has been a key part of the research, exhibiting a wide range of spectra
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Richter, Robert [Verfasser]. "Photoluminescence of Diamondoids: Experiment and Theory / Robert Richter." Berlin : epubli GmbH, 2015. http://d-nb.info/1078816085/34.

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45

Ediger, Matthias. "Photoluminescence from charged excitons in single quantum dots." Thesis, Heriot-Watt University, 2006. http://hdl.handle.net/10399/196.

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46

Cheng, Yu-li, and 鄭育俐. "Photoluminescence, Photoluminescence Excitation and Absorption of m-GaN." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/bj6tyu.

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碩士<br>國立中山大學<br>物理學系研究所<br>95<br>Group III nitrides have recently attracted great interest and are intensively studied for that cover continuously from the ultraviolet to nearinfrared region by proper alloying.Therefore, group III nitrides have wide applications inoptoelectronic devices, such as light-emitting diodes,ultraviolet or blue lasers, and full color displays. Unintentionally doped m-GaN thin films have been epitaxially grown on LAO by PAMBE. The optical characteristics were investigated with photoluminescence (PL), photoluminescence excitation (PLE), and absorption spectrum.
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Wang, Wen-Han, and 王文瀚. "Photoluminescence of CulnS2." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/59588748655310179611.

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Lai, Jui-Feng, and 賴瑞豐. "Photoluminescence from nc-SiOx:H." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/51235886546820410587.

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碩士<br>國立中興大學<br>精密工程研究所<br>93<br>Abstract In this thesis, the amorphous silicon oxide (SiOx) films with various O/Si ratios were deposited by plasma-enhanced chemical vapor deposition with the pulse-modulated RF power. The influence of the pulse-on time (ton) on the O/Si ratio of the SiOx films was elucidated. These amorphous SiOx films were then annealed in N2 atmosphere at 1100℃ for 30 min to be converted into nc-SiOx films. The intensities and the peak positions of the photoluminescence (PL) of these nc-SiOx films were measured to explore how the O/Si ratio of the as-deposited amorphou
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49

Li, Chung-li, and 李中立. "Photoluminescence of Stereoregular Polymers." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/01855021877245218250.

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碩士<br>國立中山大學<br>材料與光電科學學系研究所<br>100<br>A series of stereoregular polymers including atactic, syndiotactic and isotactic poly 4(N, N-diphenyl)styrene (PNNDPS) and poly 4(N, N-ethylphenyl)styrene (PNNEPS) were synthesized to exam the tacticity effect on the photoluminescence (PL) behavior. Also, different degrees of the regularity as well as the chemical modification of the fluorophor were explored in the stereoregular polymers. Because of the increase of the steric hindrance among the bulky triphenylamine pendants in the polymer chains, a red shift of the PL emission with an accompanying increa
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Yang, Tun-Chun, and 楊敦鈞. "Studies of Surface V-Defect on AlGaN Films by Micro-Photoluminescence and Photoluminescence Excitation." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/97941997470701756550.

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碩士<br>國立交通大學<br>電子物理系<br>91<br>We have studied optical properties of AlGaN films grown by metal organic chemical vapor phase epitaxy under various ammonia flow rate. From micro-photoluminescence (Micro-PL) spectra, there is an extra peak in the V-defect, which is 0.1 eV lower than the near band edge emission. The origin of this extra peak is the defect band induced by V-defect. In order to determine the characteristics of Inbe, and IV, the excitation power dependent measurements were carried out indicating that they are not from donor-acceptor pair (DAP) transitions. Furthermore, the temperatu
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