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Artykuły w czasopismach na temat „Plasma Chemistry - SiH4”

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Data publikacji: 7 września 2023

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1

Orlicki, Dariusz, Vladimir Hlavacek, and Hendrik J. Viljoen. "Modeling of a–Si:H deposition in a dc glow discharge reactor." Journal of Materials Research 7, no. 8 (1992): 2160–81. http://dx.doi.org/10.1557/jmr.1992.2160.

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PECVD reactors are increasingly used for the manufacturing of electronic components. This paper presents a reactor model for the deposition of amorphous hydrogenated silicon in a dc glow discharge of Ar–SiH4 The parallel-plate configuration is used in this study. Electron and positive ion densities have been calculated in a self-consistent way. A macroscopic description that is based on the Boltzmann equation with forwardscattering is used to calculate the ionization rate. The dissociation rate constant of SiH4 requires knowledge about the electron energy distribution function. Maxwell and Dru
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2

Schram, Daniel C. "Plasma processing and chemistry." Pure and Applied Chemistry 74, no. 3 (2002): 369–80. http://dx.doi.org/10.1351/pac200274030369.

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Plasma deposition and plasma conversion can be characterized by five steps: production by ionization, transfer of chemistry to precursors, transport of radicals to the surface, surface interactions with deposition, recirculation and generation of new monomers. For very fast deposition, large flows of radicals are needed and a regime is reached, in which monolayer coverage is reached in a very short time. Such large flows of radicals can be obtained by ion-induced interactions, as the C2H radical from acetylene for a-C:H deposition, or by H atom abstraction as the SiH3 radical from SiH4 for a-S
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3

Nakayama, Yoshikazu, Kazuo Wakimura, Seiki Takahashi, Hideki Kita, and Takao Kawamura. "Plasma deposition of aSi:H:F films from SiH2F2 and SiF4SiH4." Journal of Non-Crystalline Solids 77-78 (December 1985): 797–800. http://dx.doi.org/10.1016/0022-3093(85)90780-x.

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4

Park, Hwanyeol, and Ho Jun Kim. "Theoretical Analysis of Si2H6 Adsorption on Hydrogenated Silicon Surfaces for Fast Deposition Using Intermediate Pressure SiH4 Capacitively Coupled Plasma." Coatings 11, no. 9 (2021): 1041. http://dx.doi.org/10.3390/coatings11091041.

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The rapid and uniform growth of hydrogenated silicon (Si:H) films is essential for the manufacturing of future semiconductor devices; therefore, Si:H films are mainly deposited using SiH4-based plasmas. An increase in the pressure of the mixture gas has been demonstrated to increase the deposition rate in the SiH4-based plasmas. The fact that SiH4 more efficiently generates Si2H6 at higher gas pressures requires a theoretical investigation of the reactivity of Si2H6 on various surfaces. Therefore, we conducted first-principles density functional theory (DFT) calculations to understand the surf
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5

Kim, Ho Jun. "Importance of Dielectric Elements for Attaining Process Uniformity in Capacitively Coupled Plasma Deposition Reactors." Coatings 12, no. 4 (2022): 457. http://dx.doi.org/10.3390/coatings12040457.

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In this study, the effect of dielectric elements on plasma radial uniformity was analyzed for a 300 mm wafer process in a capacitively coupled plasma deposition reactor. Based on a two-dimensional self-consistent fluid model, numerical simulations were performed for SiH4/He discharges at 1200 Pa and at the radio frequency of 13.56 MHz. Although in current plasma processes the wafer is often coated with non-conducting films and placed on a ceramic substrate, related materials have not been analyzed. Therefore, the plasma characteristics were studied in depth by changing the wafer material from
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6

Milne, S. B., Y. Q. Fu, J. K. Luo, et al. "Stress and Crystallization of Plasma Enhanced Chemical Vapour Deposition Nanocrystalline Silicon Films." Journal of Nanoscience and Nanotechnology 8, no. 5 (2008): 2693–98. http://dx.doi.org/10.1166/jnn.2008.629.

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Nanocrystalline Si films were prepared with a RF-PECVD system using different SiH4/H2 ratios, plasma powers, substrate temperatures and annealing conditions. The film's intrinsic stress was characterized in relation to the crystallization fraction. Results show that an increasing H2 gas ratio, plasma power or substrate temperature can shift the growth mechanism across a transition point, past which nanocrystalline Si is dominant in the film structure. The film's intrinsic stress normally peaks during this transition region. Different mechanisms of stress formation and relaxation during film gr
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7

Yuuki, Akimasa, Takaaki Kawahara, Yasuji Matsui, and Kunihide Tachibana. "A Study of Film Precursors in SiH4 Plasma-Enhanced CVD." KAGAKU KOGAKU RONBUNSHU 17, no. 4 (1991): 758–67. http://dx.doi.org/10.1252/kakoronbunshu.17.758.

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8

Jo, Sanghyun, Suik Kang, Kyungjun Lee, and Ho Jun Kim. "Helium Metastable Distributions and Their Effect on the Uniformity of Hydrogenated Amorphous Silicon Depositions in He/SiH4 Capacitively Coupled Plasmas." Coatings 12, no. 9 (2022): 1342. http://dx.doi.org/10.3390/coatings12091342.

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This study investigates, numerically, the spatial distribution of metastable helium (He*) in He/SiH4 capacitively coupled plasma (CCP) for the purpose of optimizing plasma density distributions. As a first step, we presented the results of a two-dimensional fluid model of He discharges, followed by those of He/SiH4 discharges to deposit hydrogenated amorphous silicon films, to investigate which factor dominates the coating uniformity. We retained our CCPs in the 300 mm wafer reactor used by the semiconductor industry in the recent past. Selected parameters, such as a sidewall gap (radial dista
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9

Kim, Dong-Joo, and Kyo-Seon Kim. "Effect of pulse modulation on particle growth during SiH4 plasma process." Korean Journal of Chemical Engineering 25, no. 4 (2008): 939–46. http://dx.doi.org/10.1007/s11814-008-0153-8.

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10

Thang, Doan Ha, Hiroshi Muta, and Yoshinobu Kawai. "Investigation of plasma parameters in 915 MHz ECR plasma with SiH4/H2 mixtures." Thin Solid Films 516, no. 13 (2008): 4452–55. http://dx.doi.org/10.1016/j.tsf.2007.10.099.

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11

Nishimiya, Tatsuyuki, Tsukasa Yamane, Sachiko Nakao, et al. "Characteristics of SiH4/H2 VHF plasma produced by short gap discharge." Surface and Coatings Technology 205 (July 2011): S411—S414. http://dx.doi.org/10.1016/j.surfcoat.2011.02.043.

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12

Park, N. M., S. H. Kim, G. Y. Sung, and S. J. Park. "Growth and Size Control of Amorphous Silicon Quantum Dots Using SiH4/N2 Plasma." Chemical Vapor Deposition 8, no. 6 (2002): 254–56. http://dx.doi.org/10.1002/1521-3862(20021203)8:6<254::aid-cvde254>3.0.co;2-s.

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13

Naskar, S., S. D. Wolter, C. A. Bower, B. R. Stoner, and J. T. Glass. "Effect of film chemistry on refractive index of plasma-enhanced chemical vapor deposited silicon oxynitride films: A correlative study." Journal of Materials Research 23, no. 5 (2008): 1433–42. http://dx.doi.org/10.1557/jmr.2008.0176.

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Thick SiOxNy films were deposited by radiofrequency (rf) plasma chemical vapor deposition using silane (SiH4) and nitrous oxide (N2O) source gases. The influence of deposition conditions of gas flow ratio, rf plasma mixed-frequency ratio (100 kHz, 13.56 MHz), and rf power on the refractive index were examined. It was observed that the refractive index of the SiOxNy films increased with N and Si concentration as measured via x-ray photoelectron spectroscopy. Interestingly, a variation of refractive index with N2O:SiH4 flow ratio for the two drive frequencies was observed, suggesting that oxynit
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14

Kim, Kyung-Soo, and D.-Hyun Jung. "The permeability characteristics of non-porous membrane by C7H5F3/SiH4, plasma polymeric membrane." Korean Journal of Chemical Engineering 17, no. 2 (2000): 149–55. http://dx.doi.org/10.1007/bf02707136.

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15

Hajjar, J. ‐J J., and Rafael Reif. "Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures." Journal of The Electrochemical Society 137, no. 9 (1990): 2888–96. http://dx.doi.org/10.1149/1.2087094.

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16

LEE, Su Jin, and Byungwhan KIM. "Deposition of silicon nitride film at room temperature using a SiH4–NH3–N2 plasma." Journal of the Ceramic Society of Japan 118, no. 1384 (2010): 1188–91. http://dx.doi.org/10.2109/jcersj2.118.1188.

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17

Kumar, Sushil, Jhuma Gope, Aravind Kumar, A. Parashar, C. M. S. Rauthan, and P. N. Dixit. "High Pressure Growth of Nanocrystalline Silicon Films." Journal of Nanoscience and Nanotechnology 8, no. 8 (2008): 4211–17. http://dx.doi.org/10.1166/jnn.2008.an20.

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Nanocrystalline silicon thin films were grown using gaseous mixture of 5% silane (SiH4) diluted in hydrogen (H2) and argon (Ar) in a radio frequency (13.56 MHz) plasma enhanced chemical vapor deposition technique. These films were deposited as a function of pressure and were characterized using AFM, Laser Raman, UV-VIS transmission, photoluminescence and electrical conductivity techniques. AFM micrographs shows that these films contain nanocrystallites of 30–60 nm size. Laser Raman peaks at 520 cm−1 and photoluminescence peaks at 2.75 and 2.85 eV have been observed. The crystalline fraction in
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18

Boogaarts, M. G. H., P. J. Böcker, W. M. M. Kessels, D. C. Schram, and M. C. M. van de Sanden. "Cavity ring down detection of SiH3 on the broadband à 2A1′ ← X̃ 2A1 transition in a remote Ar–H2–SiH4 plasma." Chemical Physics Letters 326, no. 5-6 (2000): 400–406. http://dx.doi.org/10.1016/s0009-2614(00)00795-8.

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19

Smith, Donald L., Andrew S. Alimonda, Chau‐Chen Chen, Steven E. Ready, and Barbara Wacker. "Mechanism of SiN x H y Deposition from NH 3 ‐ SiH4 Plasma." Journal of The Electrochemical Society 137, no. 2 (1990): 614–23. http://dx.doi.org/10.1149/1.2086517.

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20

Loboda, M. J., and J. A. Seifferly. "Chemical influence of inert gas on the thin film stress in plasma-enhanced chemical vapor deposited a-SiN: H films." Journal of Materials Research 11, no. 2 (1996): 391–98. http://dx.doi.org/10.1557/jmr.1996.0048.

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The growth of amorphous hydrogenated silicon nitride (a-SiN:H) films by plasma enhanced chemical vapor deposition (PECVD) of SiH4−NH3−N2 reactive gas mixtures has been studied. Films were deposited at low temperature (T &lt; 250 °C) in a commercial PECVD system commonly used to grow a-SiN: H for semiconductor integrated circuit passivation. It has been observed that the stress of the a-SiN: H film can be controlled through dilution of the film precursors with an inert gas. Experiments indicate that the influence of the inert gas on the process extends from growth kinetics and plasma chemistry
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21

Yamauchi, Yasuhiro, Yoshiaki Takeuchi, Hiromu Takatsuka, Yuichi Kai, Hiroshi Muta, and Yoshinobu Kawai. "Large area SiH4/H2 VHF plasma produced at high pressure using multi-rod electrode." Surface and Coatings Technology 202, no. 22-23 (2008): 5668–71. http://dx.doi.org/10.1016/j.surfcoat.2008.06.041.

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22

Ambrosio, R. "Silicon–germanium films prepared from SiH4 and GeF4 by low frequency plasma deposition." Journal of Non-Crystalline Solids 329, no. 1-3 (2003): 134–39. http://dx.doi.org/10.1016/j.jnoncrysol.2003.08.027.

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23

Morozov, O. V., and I. I. Amirov. "SiO2 film deposition in a low-pressure RF inductive discharge SiH4 + O2 plasma." Russian Microelectronics 29, no. 3 (2000): 153–58. http://dx.doi.org/10.1007/bf02773255.

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24

Itagaki, N., K. Sasaki, and Y. Kawai. "Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves." Thin Solid Films 506-507 (May 2006): 479–84. http://dx.doi.org/10.1016/j.tsf.2005.08.087.

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25

Kim, Byungwhan, and Sang Hee Kwon. "Temperature effect on charge density of silicon nitride films deposited in SiH4–NH3–N2 plasma." Surface and Coatings Technology 202, no. 22-23 (2008): 5539–42. http://dx.doi.org/10.1016/j.surfcoat.2008.06.030.

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26

Nagai, Takehiko, Arno H. M. Smets, and Michio Kondo. "Time-resolved cavity ringdown spectroscopy on nanoparticle generation in a SiH4–H2 VHF plasma." Journal of Non-Crystalline Solids 354, no. 19-25 (2008): 2096–99. http://dx.doi.org/10.1016/j.jnoncrysol.2007.09.009.

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27

Zhou, Nan-Sheng, Shizuo Fujita, and Akio Sasaki. "Structural and electrical properties of plasma-deposited silicon nitride from SiH4-N2 gas mixture." Journal of Electronic Materials 14, no. 1 (1985): 55–72. http://dx.doi.org/10.1007/bf02657920.

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28

Jia, Haijun, Jhantu K. Saha, Naoyuki Ohse, and Hajime Shirai. "High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma." Thin Solid Films 515, no. 17 (2007): 6713–20. http://dx.doi.org/10.1016/j.tsf.2007.01.055.

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29

Kim, Jae-Hong, Chai-O. Chung, Dongsun Sheen, et al. "Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH4∕O2∕NF3 chemistry." Journal of Applied Physics 96, no. 3 (2004): 1435–42. http://dx.doi.org/10.1063/1.1767979.

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30

Kim, Byungwhan, Minji Kwon, and Yong Ho Seo. "Room temperature, ion energy-controlled deposition of silicon nitride films in a SiH4-N2 plasma." Metals and Materials International 16, no. 4 (2010): 621–25. http://dx.doi.org/10.1007/s12540-010-0815-z.

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31

Saha, Jhantu K., Haijun Jia, Naoyuki Ohse, and Hajime Shirai. "High rate growth highly crystallized microcrystalline silicon films using SiH4/H2 high-density microwave plasma." Thin Solid Films 515, no. 9 (2007): 4098–104. http://dx.doi.org/10.1016/j.tsf.2006.02.062.

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32

Courtney, Clay H., Bradley C. Smith, and H. Henry Lamb. "Remote Plasma‐Enhanced Chemical Vapor Deposition of SiO2 Using Ar/ N 2 O and SiH4." Journal of The Electrochemical Society 145, no. 11 (1998): 3957–62. http://dx.doi.org/10.1149/1.1838898.

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33

Winkler, R., M. Capitelli, C. Gorse, and J. Wilhelm. "Electron kinetics in a collision-dominated SiH4 rf plasma including self-consistent rf field strength calculation." Plasma Chemistry and Plasma Processing 10, no. 3 (1990): 419–42. http://dx.doi.org/10.1007/bf01447201.

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34

Moiseev, T., D. Chrastina, and G. Isella. "Plasma Composition by Mass Spectrometry in a Ar-SiH4-H2 LEPECVD Process During nc-Si Deposition." Plasma Chemistry and Plasma Processing 31, no. 1 (2011): 157–74. http://dx.doi.org/10.1007/s11090-010-9277-9.

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35

Sedov, V. S., A. K. Martyanov, A. A. Khomich та ін. "Co-deposition of diamond and β-SiC by microwave plasma CVD in H2-CH4-SiH4 gas mixtures". Diamond and Related Materials 98 (жовтень 2019): 107520. http://dx.doi.org/10.1016/j.diamond.2019.107520.

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36

Jonas, Stanisława, Jadwiga Konefał-Góral, Anna Małek, Stanisława Kluska, and Zbigniew Grzesik. "Surface Modification of the Ti6Al4V Alloy with Silicon Carbonitride Layer Deposited by PACVD Method." High Temperature Materials and Processes 33, no. 5 (2014): 391–98. http://dx.doi.org/10.1515/htmp-2013-0059.

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AbstractFour different layers of various silicon, carbon and nitrogen contents on the Ti6Al4V alloy and (001)Si wafers have been deposited by means of Plasma Assisted Chemical Vapor Deposition (PACVD) method. The layers were obtained from reactive gas mixture containing SiH4, CH4, NH3 and Ar. After deposition the structure and chemical composition of modified surfaces have been analyzed with use of SEM/EDS technique. Based on these results and thermodynamic calculations, the diffusion coefficients, D, for nitrogen and carbon in alloy were discussed. Scratch test shown that silicon carbonitride
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37

Remy, J., G. Dingemans, W. W. Stoffels, and G. M. W. Kroesen. "IN SITU IR OPTICAL MEASUREMENTS OF GAS PROPERTIES IN A CAPACITIVELY COUPLED RF Ar/SiH4 PLASMA." High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes) 9, no. 1 (2005): 159–71. http://dx.doi.org/10.1615/hightempmatproc.v9.i1.130.

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38

Lee, Sung‐Woo, Du‐Chang Heo, Jin‐Kyu Kang, Young‐Bae Park, and Shi‐Woo Rhee. "Microcrystalline Silicon Film Deposition from H 2 ‐ He ‐ SiH4 Using Remote Plasma Enhanced Chemical Vapor Deposition." Journal of The Electrochemical Society 145, no. 8 (1998): 2900–2904. http://dx.doi.org/10.1149/1.1838733.

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39

Zou, Xiangping, Xiaosu Yi, and Zhenkui Fang. "Preparation and characteristics of thin film with wear-resistant behavior on HDPE surface polymerized by C2H2-H2-SiH4 plasma." Journal of Applied Polymer Science 70, no. 8 (1998): 1561–66. http://dx.doi.org/10.1002/(sici)1097-4628(19981121)70:8<1561::aid-app13>3.0.co;2-5.

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40

Kessels, W. M. M., F. J. H. van Assche, P. J. van den Oever, and M. C. M. van de Sanden. "The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma." Journal of Non-Crystalline Solids 338-340 (June 2004): 37–41. http://dx.doi.org/10.1016/j.jnoncrysol.2004.02.017.

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41

Bertran, E., J. M. López-Villegas, J. L. Andújar, J. Campmany, A. Canillas, and J. R. Morante. "Optical and electrical properties of a-SixNy:H films prepared by rf plasma using N2+SiH4 gas mixtures." Journal of Non-Crystalline Solids 137-138 (January 1991): 895–98. http://dx.doi.org/10.1016/s0022-3093(05)80264-9.

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42

Jeong, Chaehwan, Seongjae Boo, Minsung Jeon, and Koichi Kamisako. "Characterization of Intrinsic a-Si:H Films Prepared by Inductively Coupled Plasma Chemical Vapor Deposition for Solar Cell Applications." Journal of Nanoscience and Nanotechnology 7, no. 11 (2007): 4169–73. http://dx.doi.org/10.1166/jnn.2007.064.

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The hydrogenated amorphous silicon (a-Si:H) films, which can be used as the passivation or absorption layer of solar cells, were prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and their characteristics were studied. Deposition process of a-Si:H films was performed by varying the parameters, gas ratio (H2/SiH4), radio frequency (RF) power and substrate temperature, while a working pressure was fixed at 70 m Torr. Their characteristics were studied by measuring thickness, optical bandgap (eV), photosensitivity, bond structure and surface roughness. When the RF power a
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43

Kim, Ho Jun, and Jung Hwan Yoon. "Computational Fluid Dynamics Analysis of Particle Deposition Induced by a Showerhead Electrode in a Capacitively Coupled Plasma Reactor." Coatings 11, no. 8 (2021): 1004. http://dx.doi.org/10.3390/coatings11081004.

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Defect formation in the deposition of thin films for semiconductors is not yet sufficiently understood. In a showerhead-type capacitively coupled plasma (CCP) deposition reactor, the showerhead acts as both the gas distributor and the electrode. We used computational fluid dynamics to investigate ways to enhance cleanliness by analyzing the particle deposition induced by the showerhead electrode in a CCP reactor. We analyzed particle transport phenomena using a three-dimensional complex geometry, whereas SiH4/He discharges were simulated in a two-dimensional simplified geometry. The process vo
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44

Gatilova, L., S. Bouchoule, S. Guilet, and G. Patriarche. "High-aspect-ratio inductively coupled plasma etching of InP using SiH4/Cl2: Avoiding the effect of electrode coverplate material." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29, no. 2 (2011): 020601. http://dx.doi.org/10.1116/1.3546024.

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45

Lee, Sung-Eun, and Young-Chun Park. "Low-temperature deposition of SiNx, SiOxNy, and SiOx films from plasma discharge of SiH4 for polycarbonate glazing applications." Thin Solid Films 636 (August 2017): 34–39. http://dx.doi.org/10.1016/j.tsf.2017.04.022.

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46

Kim, Byungwhan, Sanghee Kwon, Hyung-Su Woo, Jeong Kim, and Sang Chul Jung. "Radio Frequency Source Power-Induced Ion Energy Impact on SiN Films Deposited Using a Room Temperature SiH4–N2 Plasma." Journal of Nanoscience and Nanotechnology 11, no. 2 (2011): 1314–18. http://dx.doi.org/10.1166/jnn.2011.3405.

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47

Morgan, W. L. "A critical evaluation of low-energy electron impact cross sections for plasma processing modeling. II: Cl4, SiH4, and CH4." Plasma Chemistry and Plasma Processing 12, no. 4 (1992): 477–93. http://dx.doi.org/10.1007/bf01447255.

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48

Kim, D. J., J. Y. Hwang, T. J. Kim, N. E. Lee, and Y. D. Kim. "Effect of N2O/SiH4 flow ratio on properties of SiOx thin films deposited by low-temperature remote plasma-enhanced chemical deposition." Surface and Coatings Technology 201, no. 9-11 (2007): 5354–57. http://dx.doi.org/10.1016/j.surfcoat.2006.07.035.

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49

Kosku, Nihan, and Seiichi Miyazaki. "Insights into the high-rate growth of highly crystallized silicon films from inductively coupled plasma of H2-diluted SiH4." Thin Solid Films 511-512 (July 2006): 265–70. http://dx.doi.org/10.1016/j.tsf.2005.12.105.

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Das, Debajyoti, Debnath Raha, and Koyel Bhattacharya. "Evolution of nc-Si Network and the Control of Its Growth by He/H2 Plasma Assistance in SiH4 at PECVD." Journal of Nanoscience and Nanotechnology 9, no. 9 (2009): 5614–21. http://dx.doi.org/10.1166/jnn.2009.1151.

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