Gotowe bibliografie tematyczne / Plasma etching

Spis treści

  1. Artykuły w czasopismach
  2. Rozprawy doktorskie
  3. Książki
  4. Części książek
  5. Streszczenia konferencji
  6. Raporty organizacyjne

Gotowa bibliografia na temat „Plasma etching”

Autor: Grafiati
Data publikacji: 4 czerwca 2021
Data aktualizacji: 25 lipca 2025

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Artykuły w czasopismach na temat "Plasma etching"

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Гармаш, В. И., В. Е. Земляков, В. И. Егоркин, А. В. Ковальчук та С. Ю. Шаповал. "Исследование влияния атомарного состава на скорость плазмохимического травления нитрида кремния в силовых транзисторах на основе AlGaN/GaN-гетероперехода". Физика и техника полупроводников 54, № 8 (2020): 748. http://dx.doi.org/10.21883/ftp.2020.08.49646.9398.

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The effect of atomic composition on the rate of plasma chemical etching of silicon nitride in power transistors based on an AlGaN / GaN heterojunction is studied. It is shown how the subsequent process of its plasma-chemical etching depends on the configuration of the incorporation of hydrogen impurity atoms into the molecular structure of the silicon nitride deposited in the plasma. The dependence of the etching rate on the parameters of the process (the working pressure in the chamber, the power of the plasma generator, the flow of working gases, the deposition temperature) is investigated.
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Mayer, Thomas M. "Plasma etching." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 44, no. 4 (1990): 484–85. http://dx.doi.org/10.1016/0168-583x(90)90013-k.

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Cheng, Kenneth J., Weicong Ma, and Philip D. Evans. "Differential Etching of Rays at Wood Surfaces Exposed to an Oxygen Glow Discharge Plasma." Materials 17, no. 2 (2024): 521. http://dx.doi.org/10.3390/ma17020521.

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Basswood samples were exposed to oxygen glow-discharge plasmas for 30 min, and etching of radial and tangential longitudinal surfaces was measured. It was hypothesized that there would be a positive correlation between etching and plasma energy, and differential etching of wood surfaces because of variation in the microstructure and chemical composition of different woody tissues. Etching at the surface of basswood samples was examined using profilometry. Light and scanning electron microscopy were used to examine the microstructure of samples exposed to plasma. There was a large effect of pla
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Lee, Youngseok, Heejung Yeom, Daehan Choi, et al. "Database Development of SiO2 Etching with Fluorocarbon Plasmas Diluted with Various Noble Gases of Ar, Kr, and Xe." Nanomaterials 12, no. 21 (2022): 3828. http://dx.doi.org/10.3390/nano12213828.

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In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO2 etching, with Ar typically employed in the dilution of the FC plasma due to its cost effectiveness and accessibility. While it has been reported that plasmas with other noble gases, namely Kr and Xe, have distinct physical properties such as electron density and temperature, their implementation into plasma etching has not been sufficiently studied. In this work, we conducted SiO2 etching with FC plasmas diluted with different noble gases, i.e., FC precursors of C4F8 and CH2F2 with Ar, Kr, or Xe, under various gas f
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Park, Jin-Seong, In-Sung Park, Seon Yong Kim, et al. "Plasma Etching of SiO2 with CF3I Gas in Plasma-Enhanced Chemical Vapor Deposition Chamber for In-Situ Cleaning." Science of Advanced Materials 11, no. 12 (2019): 1667–72. http://dx.doi.org/10.1166/sam.2019.3634.

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Non-global-warming CF3I gas has been investigated as a removal etchant for SiO2 film. Thermally fabricated SiO2 films were etched by the plasma generated with a gas mixture of CF3I and O2 (CF3I/O2) in the plasma-enhanced chemical vapor deposition chamber. The etch rate of SiO2 films was studied along with the process parameters of plasma etching such as chamber pressure, etching gas flow ratio of CF3I to CF3I/O2, plasma power, and chamber temperature. Increasing the chamber pressure from 400 to 1,000 mTorr decreased the etch rate of SiO2 film. The etch rate of this film showed a minimum value
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Lakrathok, Anantachai, Jakrapong Supadech, Chana Leepattarapongpan, et al. "Design of the comb-drive structure to reduce asymmetry lateral plasma etching on the cavity SOI substrate for MEMS fabrication." Journal of Physics: Conference Series 2934, no. 1 (2025): 012027. https://doi.org/10.1088/1742-6596/2934/1/012027.

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Abstract A conventional microelectromechanical system (MEMS) fabricated using deep-reactive ion etching (DRIE) on a silicon-on-insulator (SOI) wafer and wet etching with hydrofluoric acid (HF) encounters challenges related to isotropic etching, such as microstructure stiction, etched byproduct contamination, and over-etching of the side protective oxide layer. Even with the utilization of cavity SOI (C-SOI) wafers, certain movable structures can still experience damage due to asymmetry in lateral plasma etching caused by the uneven distribution of plasma ions and etchant radicals. This investi
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Efremov, Alexander M., Alexander V. Bobylev, Ekaterina M. Kaznacheeva, and Kwang-Ho Kwon. "ON EFFECTS OF INITIAL CF4 + CHF3 + O2 MIXTURE COMPOSITION ON PLASMA PARAMETERS AND REACTIVE-ION ETCHING OF SILICON." ChemChemTech 68, no. 1 (2024): 39–47. https://doi.org/10.6060/ivkkt.20256801.7096.

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In this work, we discussed how the CF4/CHF3 ratio in CF4 + CHF3 + O2 gas mixture does influence steady-state plasma composition and silicon etching kinetics in a conventional reactive-ion process. Plasma diagnostics by double Langmuir probes delivered the information on electro-physical plasma parameters and provided input data for the modeling of plasma chemistry. As a result, we confirmed basic properties of CF4 + O2 and CHF3 + O2 plasmas known from previous works as well as analyzed formation/decay kinetics for plasma active species in the three-component gas mixture. In particular, it was
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Rahim, Rosminazuin A., Badariah Bais, and Majlis Burhanuddin Yeop. "Double-Step Plasma Etching for SiO2 Microcantilever Release." Advanced Materials Research 254 (May 2011): 140–43. http://dx.doi.org/10.4028/www.scientific.net/amr.254.140.

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In this paper, an isotropic dry plasma etching was used to release the suspended SiO2 microcantilever from the substrate of SOI wafer. Employing the plasma dry etching technique, the frontside etching for the SiO2 microcantilever release is done using the Oxford Plasmalab System 100. To obtain the optimum condition for the microcantilever release using the plasma etcher, the etching parameters involved are 100 sccm of SF6 flow, 2000 W of capacitively coupled plasma (CCP) power, 3 W of inductively coupled plasma (ICP) power, 20°C of etching temperature and 30 mTorr chamber pressure. The optimum
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Hao, Yuhua, and Xia Wang. "Effects of the Photoelectrochemical Etching in Hydrogen Fluride (HF) on the Optoelectrical Properties of Ga2O3." Journal of Physics: Conference Series 2112, no. 1 (2021): 012006. http://dx.doi.org/10.1088/1742-6596/2112/1/012006.

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Abstract Photoelectrochemical (PEC) etching is preferred to produce micro-and nano-structures for constructing Ga2O3-based electronics and optoelectronics, owing to its numerous controllable parameters. During the devices fabrications, beyond the wet chemical and dry (plasma) etching produces, PEC etching also leads to device degradations inordinately. In this work, the Ga2O3 thin film was PEC etched by hydrogen fluride (HF) etchant, and its opto-electric deep-ultraviolet sensing performances, including photo-to-dark current ratio, responsivity, and response speed, before and after PEC etching
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Lee, Ji Yeon, Hong Seong Gil, Woo Chang Park, Yun Jong Jang, Dong Woo Kim, and Geun Young Yeom. "Development of a Highly Selective Etching Process for SiO2 over Si and SiNx Using F/H-Based Remote Plasmas and a Vapor Phase Solvent." ECS Meeting Abstracts MA2024-02, no. 33 (2024): 4961. https://doi.org/10.1149/ma2024-02334961mtgabs.

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Isotropic etching is traditionally performed using liquid-based wet etching techniques. However, with the increasing integration of devices, achieving conformal etching in high aspect ratio patterns becomes difficult, as liquid chemicals are limited in their ability to penetrate deep into these structures. Moreover, during the drying phase following chemical treatment, surface tension can lead to pattern collapse. Consequently, there is a growing need for dry isotropic etching methods to replace conventional wet etching in advanced device manufacturing. In cases where high selectivity for SiO2
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Rozprawy doktorskie na temat "Plasma etching"

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Chen, Hsin-Yi. "Inductively coupled plasma etching of InP." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape4/PQDD_0021/MQ54126.pdf.

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Parks, Joseph Worthy Jr. "Microscopic numerical analysis of semiconductor devices with application to avalnache photodiodes." Diss., Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/13539.

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Baker, Michael Douglas. "In-situ monitoring of reactive ion etching." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/15352.

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Zhu, Hongbin. "Control of Plasma Etching of Semiconductor Surfaces." Diss., Tucson, Arizona : University of Arizona, 2005. http://etd.library.arizona.edu/etd/GetFileServlet?file=file:///data1/pdf/etd/azu%5Fetd%5F1354%5F1%5Fm.pdf&type=application/pdf.

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Jamali, Arash. "Etching of wood by glow-discharge plasma." Thesis, University of British Columbia, 2011. http://hdl.handle.net/2429/39882.

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In this thesis I hypothesize that plasma will etch wood surfaces, produce new cell wall microstructures, and change the surface chemistry of wood because of differential etching of wood’s polymeric constituents. I also examine factors affecting the etching of wood by plasma, and applications of plasma etching for wood processing. Scanning electron and light microscopy and white light confocal profilometry were used to examine etching of wood surfaces. Wet chemical analysis, FTIR and XPS spectroscopy were used to analyze chemical changes at the surface of plasma-treated wood. Experiments were a
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Goodlin, Brian E. 1974. "Multivariate endpoint detection of plasma etching processes." Thesis, Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/8498.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2002.<br>Includes bibliographical references.<br>In plasma etching process it is critical to know when the film being etched has cleared to the underlying film, i.e. to detect endpoint, in order to achieve the desired device performance in the resulting integrated circuit. The most highly utilized sensor technology for determining endpoint has historically been optical emission spectroscopy (OES), because it is both non-invasive and highly sensitive to chemical changes in the reactor. Historically, the intens
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Fukumoto, Hiroshi. "Model Analysis of Plasma-Surface Interactions during Silicon Oxide Etching in Fluorocarbon Plasmas." 京都大学 (Kyoto University), 2012. http://hdl.handle.net/2433/158076.

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Brihoum, Mélissa. "Miniaturisation des grilles de transistors : Etude de l'intérêt des plasmas pulsés." Thesis, Grenoble, 2013. http://www.theses.fr/2013GRENT073.

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L'industrie de la microélectronique s'appuie sur l'évolution constante de la miniaturisation des transistors. D'ici 2016, cette industrie atteindra le nœud technologique 16 nm dans lequel il faudra être capable de graver des structures de dimensions nanométrique ayant de très forts facteurs d'aspect. Cependant, les procédés de gravure actuels montrent de sérieuses limitations en termes de contrôle des profils et des dimensions critiques lorsqu'il faut graver de telles structures. Les problèmes rencontrés sont liés d'une part à des limitations intrinsèques des procédés plasmas et d'autre part à
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Astell-Burt, P. J. "Studies on etching and polymer deposition in halocarbon plasmas." Thesis, University of Oxford, 1987. http://ora.ox.ac.uk/objects/uuid:d8fd1069-a66b-4372-8ba0-b9ca5367445c.

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Plasma etching, the selective removal of materials by reaction with chemically active species formed in a glow-discharge, is widely used by the electronics industry because of the advantages over 'wet' processes. The full potential has yet to be realised because chemical processes occuring in the plasma and at the plasma/substrate interface are incompletely understood. In this work attention was focussed on the accumulation of polymers on surfaces during plasma etching in fluorocarbon gases. An apparatus was designed and constructed to explore the conditions which give rise to these deposits b
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Toogood, Matthew John. "Studies of the chemistry of plasmas used for semiconductor etching." Thesis, University of Oxford, 1991. http://ora.ox.ac.uk/objects/uuid:e234bbaa-d6e6-4ac8-a3dd-aa9a2c1b1e39.

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Optical diagnostic techniques have been developed and then used to investigate the chemistry of reactive species formed in CF<sub>4</sub> / O<sub>2</sub> rf parallel plate discharges, similar to those employed in semiconductor material processing. Oxygen atoms were detected by two photon laser induced fluorescence (LIF), and the technique was found to have a number of experimental caveats owing mainly to the high laser intensities required. In particular, amplified spontaneous emission (ASE), was observed from laser excitation of oxygen, and was found to influence the spontaneous fluorescence
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Książki na temat "Plasma etching"

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M, Manos Dennis, and Flamm Daniel L, eds. Plasma etching: An introduction. Academic Press, 1989.

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Sugawara, M. Plasma etching: Fundamentals and applications. Oxford University Press, 1998.

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Hull, David R. Plasma etching a ceramic composite. National Aeronautics and Space Administration, 1992.

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Morgan, Russ A. Plasma etching in semiconductor fabrication. Elsevier, 1985.

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NATO Advanced Study Institute on Plasma Processing of Semiconductors (1996 Bonas, France). Plasma processing of semiconductors. Kluwer Academic Publishers, 1997.

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Chen, Hsin-Yi. Inductively coupled plasma etching of InP. National Library of Canada, 2000.

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F, Williams P., ed. Plasma processing of semiconductors. Kluwer, 1997.

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Symposium, on Plasma Processing (5th 1984 New Orleans La ). Proceedings of the Fifth Symposium on Plasma Processing. Dielectrics and Insulation and Electronics Divisions, Electrochemical Society, 1985.

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International Symposium on Plasma Processing (14th 2002 Philadelphia, Pa.). Plasma processing XIV: Proceedings of the International Symposium. Edited by Mathad G. S, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and Electrochemical Society Meeting. Electrochemical Society, 2002.

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Symposium on Plasma Processing (13th 2000 Toronto, Ont.). Plasma processing XIII: Proceedings of the International Symposium. Edited by Mathad G. S, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and Electrochemical Society Meeting. Electrochemical Society., 2000.

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Części książek na temat "Plasma etching"

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Chung, Chen-Kuei. "Plasma Etching." In Encyclopedia of Microfluidics and Nanofluidics. Springer New York, 2015. http://dx.doi.org/10.1007/978-1-4614-5491-5_1251.

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Chung, Chen-Kuei. "Plasma Etching." In Encyclopedia of Microfluidics and Nanofluidics. Springer US, 2014. http://dx.doi.org/10.1007/978-3-642-27758-0_1251-5.

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Winter, Patrick M., Gregory M. Lanza, Samuel A. Wickline, et al. "Plasma Etching." In Encyclopedia of Nanotechnology. Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100659.

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Gooch, Jan W. "Plasma Etching." In Encyclopedic Dictionary of Polymers. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_8802.

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Roualdes, Stephanie. "Plasma Etching." In Encyclopedia of Membranes. Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-642-40872-4_1224-4.

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Mader, H. "Plasma-Assisted Etching." In Micro System Technologies 90. Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-45678-7_51.

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d’Agostino, Riccardo, and Francesco Fracassi. "Plasma Etching Processes." In Crucial Issues in Semiconductor Materials and Processing Technologies. Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_27.

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van Roosmalen, A. J., J. A. G. Baggerman, and S. J. H. Brader. "The Plasma State." In Dry Etching for VLSI. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-2566-4_2.

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d’Agostino, Riccardo, and Francesco Fracassi. "Plasma Etching Processes and Diagnostics." In Plasma Technology. Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3400-6_7.

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Resnick, D. J. "Photomask Etching." In Handbook of Advanced Plasma Processing Techniques. Springer Berlin Heidelberg, 2000. http://dx.doi.org/10.1007/978-3-642-56989-0_9.

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Streszczenia konferencji na temat "Plasma etching"

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Silhan, Lukas, Jan Novotny, Tomas Plichta, Jan Jezek, Ondrej Vaculik, and Mojmir Sery. "Design of Setup for Laser Induced Plasma Etching." In 2024 37th International Vacuum Nanoelectronics Conference (IVNC). IEEE, 2024. http://dx.doi.org/10.1109/ivnc63480.2024.10652276.

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Lin, Yuanwei. "Time-Multiplexed Alternating Plasma Etching of Piezoelectric Materials." In 2025 Conference of Science and Technology of Integrated Circuits (CSTIC). IEEE, 2025. https://doi.org/10.1109/cstic64481.2025.11017998.

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Agarwal, A., and M. J. Kushner. "Plasma atomic layer etching." In The 33rd IEEE International Conference on Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts. IEEE, 2006. http://dx.doi.org/10.1109/plasma.2006.1707342.

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Wu, Xuming, Changhe Zhou, Peng Xi, Enwen Dai, Huayi Ru, and Liren Liu. "Etching quartz with inductively coupled plasma etching equipment." In Optical Science and Technology, SPIE's 48th Annual Meeting, edited by Ernst-Bernhard Kley and Hans Peter Herzig. SPIE, 2003. http://dx.doi.org/10.1117/12.504001.

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Tachi, S., K. Tsujimoto, S. Arai, H. Kawakami, and S. Okudaira. "Low Temperature Microwave Plasma Etching." In 1988 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1988. http://dx.doi.org/10.7567/ssdm.1988.s-iiib-2.

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Bogomolov, B. K. "Plasma Chemical Etching of Silicon." In 2006 8th International Conference on Actual Problems of Electronic Instrument Engineering. IEEE, 2006. http://dx.doi.org/10.1109/apeie.2006.4292430.

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Bogomolov, B. K. "Plasma Chemical Etching of Silicon." In 2006 8th International Conference on Actual Problems of Electronic Instrument Engineering. IEEE, 2006. http://dx.doi.org/10.1109/apeie.2006.4292454.

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Abraham-Shrauner, B., and C. D. Wang. "Neutral etching and shadowing in trench etching of semiconductors." In International Conference on Plasma Science (papers in summary form only received). IEEE, 1995. http://dx.doi.org/10.1109/plasma.1995.531627.

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Goto, Tetsuya, Masaki Hirayama, Makoto Moriguchi, Shigetoshi Sugawa, and Tadahiro Ohmi. "A New Microwave-Excited Plasma Etching Equipment separated Plasma Excited Region from Etching Process Region." In 2002 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2002. http://dx.doi.org/10.7567/ssdm.2002.p3-13.

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Torigoe, R., T. Urakawa, D. Yamashita, et al. "Plasma etching resistance of plasma anisotropic CVD carbon films." In 2012 IEEE 39th International Conference on Plasma Sciences (ICOPS). IEEE, 2012. http://dx.doi.org/10.1109/plasma.2012.6383665.

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Raporty organizacyjne na temat "Plasma etching"

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Shul, R. J., R. D. Briggs, S. J. Pearton, et al. Chlorine-based plasma etching of GaN. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/432987.

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Greenberg, K. E., P. A. Miller, R. Patteson, and B. K. Smith. Plasma-etching science meets technology in the MDL. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/10147051.

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Kolodziejski, Leslie A., and Erich P. Ippen. Advanced Plasma Etching of Complex Combinations of III-V Heterostructures. Defense Technical Information Center, 2008. http://dx.doi.org/10.21236/ada495071.

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Pearton, S. J., C. B. Vartuli, J. W. Lee, et al. Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/212561.

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Economou, Demetre J., and Vincent M. Donnelly. Pulsed Plasma with Synchronous Boundary Voltage for Rapid Atomic Layer Etching. Office of Scientific and Technical Information (OSTI), 2014. http://dx.doi.org/10.2172/1130983.

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Constantine, C., D. Johnson, and C. Barratt. Parametric study of compound semiconductor etching utilizing inductively coupled plasma source. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/266733.

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Shul, R. J., K. D. Choquette, A. J. Howard, et al. Ultra-smooth dry etching of GaAs using a hydrogen plasma pretreatment. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/10115207.

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Hareland, W. A., and R. J. Buss. Optical diagnostic instrument for monitoring etch uniformity during plasma etching of polysilicon in a chlorine-helium plasma. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/10182286.

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Scherer, Axel. Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE): Nanofabrication Tool for High Resolution Pattern Transfer. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada396342.

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Palmisiano, M. N., G. M. Peake, R. J. Shul, et al. Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics. Office of Scientific and Technical Information (OSTI), 2002. http://dx.doi.org/10.2172/805334.

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