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Rozprawy doktorskie na temat „Plasma etching”

Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 25 lipca 2025

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1

Chen, Hsin-Yi. "Inductively coupled plasma etching of InP." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape4/PQDD_0021/MQ54126.pdf.

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2

Parks, Joseph Worthy Jr. "Microscopic numerical analysis of semiconductor devices with application to avalnache photodiodes." Diss., Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/13539.

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3

Baker, Michael Douglas. "In-situ monitoring of reactive ion etching." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/15352.

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4

Zhu, Hongbin. "Control of Plasma Etching of Semiconductor Surfaces." Diss., Tucson, Arizona : University of Arizona, 2005. http://etd.library.arizona.edu/etd/GetFileServlet?file=file:///data1/pdf/etd/azu%5Fetd%5F1354%5F1%5Fm.pdf&type=application/pdf.

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5

Jamali, Arash. "Etching of wood by glow-discharge plasma." Thesis, University of British Columbia, 2011. http://hdl.handle.net/2429/39882.

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In this thesis I hypothesize that plasma will etch wood surfaces, produce new cell wall microstructures, and change the surface chemistry of wood because of differential etching of wood’s polymeric constituents. I also examine factors affecting the etching of wood by plasma, and applications of plasma etching for wood processing. Scanning electron and light microscopy and white light confocal profilometry were used to examine etching of wood surfaces. Wet chemical analysis, FTIR and XPS spectroscopy were used to analyze chemical changes at the surface of plasma-treated wood. Experiments were a

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6

Goodlin, Brian E. 1974. "Multivariate endpoint detection of plasma etching processes." Thesis, Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/8498.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2002.<br>Includes bibliographical references.<br>In plasma etching process it is critical to know when the film being etched has cleared to the underlying film, i.e. to detect endpoint, in order to achieve the desired device performance in the resulting integrated circuit. The most highly utilized sensor technology for determining endpoint has historically been optical emission spectroscopy (OES), because it is both non-invasive and highly sensitive to chemical changes in the reactor. Historically, the intens

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7

Fukumoto, Hiroshi. "Model Analysis of Plasma-Surface Interactions during Silicon Oxide Etching in Fluorocarbon Plasmas." 京都大学 (Kyoto University), 2012. http://hdl.handle.net/2433/158076.

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8

Brihoum, Mélissa. "Miniaturisation des grilles de transistors : Etude de l'intérêt des plasmas pulsés." Thesis, Grenoble, 2013. http://www.theses.fr/2013GRENT073.

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L'industrie de la microélectronique s'appuie sur l'évolution constante de la miniaturisation des transistors. D'ici 2016, cette industrie atteindra le nœud technologique 16 nm dans lequel il faudra être capable de graver des structures de dimensions nanométrique ayant de très forts facteurs d'aspect. Cependant, les procédés de gravure actuels montrent de sérieuses limitations en termes de contrôle des profils et des dimensions critiques lorsqu'il faut graver de telles structures. Les problèmes rencontrés sont liés d'une part à des limitations intrinsèques des procédés plasmas et d'autre part à

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9

Astell-Burt, P. J. "Studies on etching and polymer deposition in halocarbon plasmas." Thesis, University of Oxford, 1987. http://ora.ox.ac.uk/objects/uuid:d8fd1069-a66b-4372-8ba0-b9ca5367445c.

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Plasma etching, the selective removal of materials by reaction with chemically active species formed in a glow-discharge, is widely used by the electronics industry because of the advantages over 'wet' processes. The full potential has yet to be realised because chemical processes occuring in the plasma and at the plasma/substrate interface are incompletely understood. In this work attention was focussed on the accumulation of polymers on surfaces during plasma etching in fluorocarbon gases. An apparatus was designed and constructed to explore the conditions which give rise to these deposits b

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10

Toogood, Matthew John. "Studies of the chemistry of plasmas used for semiconductor etching." Thesis, University of Oxford, 1991. http://ora.ox.ac.uk/objects/uuid:e234bbaa-d6e6-4ac8-a3dd-aa9a2c1b1e39.

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Optical diagnostic techniques have been developed and then used to investigate the chemistry of reactive species formed in CF<sub>4</sub> / O<sub>2</sub> rf parallel plate discharges, similar to those employed in semiconductor material processing. Oxygen atoms were detected by two photon laser induced fluorescence (LIF), and the technique was found to have a number of experimental caveats owing mainly to the high laser intensities required. In particular, amplified spontaneous emission (ASE), was observed from laser excitation of oxygen, and was found to influence the spontaneous fluorescence

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11

Ohta, Hiroaki. "Molecular dynamics simulation of the plasma-surface interaction during plasma etching processes." Kyoto University, 2004. http://hdl.handle.net/2433/145252.

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Kyoto University (京都大学)<br>0048<br>新制・課程博士<br>博士(エネルギー科学)<br>甲第11119号<br>エネ博第97号<br>新制||エネ||27(附属図書館)<br>22669<br>UT51-2004-L916<br>京都大学大学院エネルギー科学研究科エネルギー基礎科学専攻<br>(主査)教授近藤克己, 教授佐野史道, 教授斧髙一<br>学位規則第4条第1項該当

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12

Steiner, Pinckney Alston IV. "Anisotropic low-energy electron-enhanced etching of semiconductors in DC plasma." Thesis, Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/27060.

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13

Smith, Scott Alan. "INDUCTIVELY COUPLED PLASMA ETCHING OF III-N SEMICONDUCTORS." NCSU, 2002. http://www.lib.ncsu.edu/theses/available/etd-05082002-162142/.

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The principal focus of this research was the employment of an in-house designed and constructed inductively coupled plasma (ICP) system for integrated studies pertaining to the etching rates and etching selectivity among AlN, GaN, and Al(x)Ga(1-x)N. An (ICP) system was chosen because of its high plasma density and low cost relative to other high-density plasma etching systems. The etch rates were studied as a function of ICP power, pressure, DC bias, and gas composition. The use of a mixture of 2 sccm BCl3 and 18 sccm Cl2 resulted in a maximum etch rate of 2.2 microns/min for GaN as well as ne

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14

Samara, Vladimir. "Negative ions and neutral beams in plasma etching." Thesis, Open University, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.534386.

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15

Carter, A. J. "The plasma etching of III-V semiconductor materials." Thesis, Cardiff University, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305164.

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16

Rizvi, Syed Shabbar Abbas. "Inductively coupled Ar/Clâ‚‚ plasma etching of GaN." Thesis, University of Ulster, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.288895.

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17

Tao, Benjamin A. (Benjamin Albert). "Non-perfluorocompound chemistries for plasma etching of dielectrics." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/40603.

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18

Dalton, Timothy Joseph. "Pattern dependencies in the plasma etching of polysilicon." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/11655.

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19

Krautschik, Christof Gabriel 1957. "Impedance determination of a RF plasma discharge by external measurements." Thesis, The University of Arizona, 1989. http://hdl.handle.net/10150/277141.

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The equivalent impedance of a RF plasma was experimentally determined by monitoring the voltage and current waveform for different input powers in real time. Average ion energies and fluxes were determined by a computer model which takes ion collisions in the sheath regions into account. In addition two models were proposed which explain how RF energy is converted to DC potential energy in the sheath. Etch rates of Si in a CF₄ discharge were also evaluated and related to the measurements.

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20

Okpalugo, Osmond A. "Characteristics of argon-chlorine inductively coupled plasmas for plasma surface modification and etching." Thesis, University of Ulster, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.399684.

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21

Fagan, James G. "Reactive ion etching of polymide films using a radio frequency discharge /." Online version of thesis, 1987. http://hdl.handle.net/1850/10284.

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22

Nakazaki, Nobuya. "A Study of Plasma-Induced Surface Roughness and Ripple Formation during Silicon Etching in Inductively Coupled Chlorine Plasmas." 京都大学 (Kyoto University), 2016. http://hdl.handle.net/2433/215513.

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23

Perng, John Kangchun. "High Aspect-Ratio Nanoscale Etching in Silicon using Electron Beam Lithography and Deep Reactive Ion Etching (DRIE) Technique." Thesis, Georgia Institute of Technology, 2006. http://hdl.handle.net/1853/11543.

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This thesis reports the characterization and development of nanolithography using Electron Beam Lithography system and nanoscale plasma etching. The standard Bosch process and a modified three-pulse Bosch process were developed in STS ICP and Plasma ICP system separately. The limit of the Bosch process at the nanoscale regime was investigated and documented. Furthermore, the effect of different control parameters on the process were studied and summarized in this report. 28nm-wide trench with aspect-ratio of 25 (smallest trench), and 50nm-wide trench with aspect ratio of 37 (highest aspect-rat

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24

Booth, J. P. "Laser studies of species involved in plasma etching processes." Thesis, University of Oxford, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233432.

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25

Rodgers, Seth Thomas 1970. "Multiscale modeling of chemical vapor deposition and plasma etching." Thesis, Massachusetts Institute of Technology, 2000. http://hdl.handle.net/1721.1/28219.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2000.<br>Includes bibliographical references.<br>In this work, a framework and a set of modeling tools capable of describing systems with key processes occurring on widely separated length and time scales has been developed. The major focus of this work is linking atomistic and continuum descriptions of gas phase transport. This problem is of considerable practical interest, as most etching and CVD processes are run at low pressures ~ 1 torr or less. Under these conditions, the continuum diffusion models used

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26

Kong, Yung 1967. "Particle contamination in sulfur-hexafluoride/argon plasma etching process." Thesis, The University of Arizona, 1991. http://hdl.handle.net/10150/277919.

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Process generated particle contamination on unpatterned silicon wafers etched in an SF6/argon plasma using a Tegal MCR-1 etcher in the plasma triode-1 mode was characterized using response surface methodology. Particle deposition was observed to be a predictable function of plasma parameter space, which can be determined by relatively few statistically designed experiments. A model of particle deposition as a function of 13.56 MHz chamber electrode rf power, chamber pressure, gas flow rate, etch time and 100 kHz wafer electrode power was constructed. It is found that particle deposition depend

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27

Haque, Yasmeen. "Deposition of plasma polymerized thin films /." Thesis, Connect to this title online; UW restricted, 1985. http://hdl.handle.net/1773/9848.

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28

Vas̆eková, Eva. "Spectroscopic studies of etching gases and microwave diagnostics of plasmas related to the semiconductor industry." n.p, 2006. http://physics.open.ac.uk/~ev295/!MASTER_THESIS.pdf.

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29

Sucksmith, John Peter. "Studies of plasmas used for semiconductor etching." Thesis, University of Oxford, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.335818.

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30

Slapelis, Linda. "Plasma modification of poly(ester sulfonic) acid anionomeric membranes /." Online version of thesis, 1994. http://hdl.handle.net/1850/11445.

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31

Bose, Abhijit Frank. "Diagnostics and control of plasma etching reactors for semiconductor manufacturing /." [S.l.] : [s.n.], 1995. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=11224.

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32

Nishimoto, Keane T. (Keane Takeshi) 1981. "A study of plasma etching for use on active metals." Thesis, Massachusetts Institute of Technology, 2005. http://hdl.handle.net/1721.1/33914.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2005.<br>Includes bibliographical references (leaves 62-63).<br>Active metals can be used as a getter pump, removing impurities in ultra-pure high vacuum environments. To relieve the difficulties involved with the transportation, storage and handling of these metals, a process is being developed to create a protective coating by removing the active metal component from the surface of a mixture of the active metal and a stable element via immersion in a wet chemical bath. It is the purpose of this thesis to i

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33

Tsuda, Mutsumi. "A Study of Plasma-Surface Interactions in Plasma Etching with Chlorine-and Bromine-based Chemistries." 京都大学 (Kyoto University), 2004. http://hdl.handle.net/2433/147670.

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34

Haass, Moritz. "Développement de procédés de gravure à base de plasmas réactifs pulsés Pulsed plasmas for etch applications." Phd thesis, Université de Grenoble, 2012. http://tel.archives-ouvertes.fr/tel-00820065.

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Du fait de la réduction des dimensions en microélectronique, les procédés de gravure par plasmas ne peuvent plus satisfaire aux exigences de l'industrie. De nouvelles stratégies sont en cours de développement. Ce travail consiste en l'étude de plasmas pulsés de HBr/O2 comme une alternative pour la gravure du silicium. Divers diagnostics dans un réacteur industriel 300 mm sont utilisés pour caractériser le plasma tandis que la gravure du silicium est étudiée par XPS et par microscopie électronique. Lorsque le plasma est pulsé à faible rapport cyclique, sa température et sa dissociation sont for

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35

Yeager, John David. "Design and development of metal-polymer film systems for flexible electrodes used in cortical mapping in rats." Pullman, Wash. : Washington State University, 2008. http://www.dissertations.wsu.edu/Thesis/Summer2008/j_yeager_070908.pdf.

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Thesis (M.S. in materials science and engineering)--Washington State University, August 2008.<br>Title from PDF title page (viewed on Mar. 11, 2009). "School of Mechanical and Materials Engineering." Includes bibliographical references.

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36

Boysen, Christopher J. "An analysis and development of controls for exposures to maintenance personnel working on the plasma metal etchers." Online version, 1998. http://www.uwstout.edu/lib/thesis/1998/1998boysenc.pdf.

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37

Xuan, Guangchi. "Plasmaless automated xenon difluoride MEMS etching system development and application." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 71 p, 2006. http://proquest.umi.com/pqdweb?did=1163250891&sid=1&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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38

Shustin, E. G., N. V. Isaev, I. L. Klykov, and V. V. Peskov. "Plasma Processing Reactor on a Base of Beam Plasma Discharge for Producing and Processing Nanomaterials." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35407.

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The paper describes the design, modes and applications of novel kind of low pressure plasma processing reactor based on beam plasma discharge as the plasma source. This reactor ensures flawless treatment of material surface as well as deposition of specific coatings with strictly defined energy of ions acting upon a treated surface. Applications of the reactor are represented such as defect-free etching heterostructures based on GaAs and producing structurally perfect samples of graphene. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3

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39

Eden, Samuel Peter. "Spectroscopic and electron impact studies of molecules relevant to plasma etching." Thesis, University College London (University of London), 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.407575.

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40

Lane, Jennifer M. (Jennifer Marie) 1977. "A fundamental study of feature evolution during high density plasma etching." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/80245.

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Thesis (M.Eng. and S.B.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.<br>Includes bibliographical references (leaves 91-94).<br>by Jennifer M. Lane.<br>M.Eng.and S.B.

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41

Mahorowala, Arpan P. (Arpan Pravin) 1970. "Feature profile evolution during the high density plasma etching of polysilicon." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/50514.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1998.<br>Includes bibliographical references (p. 185-191).<br>This thesis work deals with one of the critical steps in the manufacturing of modem integrated circuits - the plasma etching of thin polysilicon films used to form the metaloxide- semiconductor transistor gate. The etching of very small features (-0.25 jim) in the -2500 A thick films, performed at low operating pressures (-10 mTorr), must be accompanied with minimal etching artifacts that can degrade device performance. This thesis aims to understa

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42

Lu, Kan P. "Surface modulation of fluoropolymers for the improvement of adhesion : O₂-CF₄-Ar radio frequency plasma modification of poly (tetrafluoroethylene) /." Online version of thesis, 1994. http://hdl.handle.net/1850/11696.

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43

Blanc, Romuald. "Développement et caractérisation de procédés de gravure des espaceurs Si3N4 pour les technologies FDSOI." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENT036/document.

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Dans les technologies CMOS sur substrat FDSOI, la consommation de silicium dans les zones sources/drains des transistors par les étapes successives de gravure est un paramètre critique. La gravure plasma des espaceurs de Si3N4, qui a lieu après la gravure de la grille, doit permettre la fabrication d'espaceurs au profil droit déterminant la longueur effective du canal sous la grille tout en minimisant la consommation de la couche mince de silicium sous-jacente. De plus, l'état de surface du silicium généré par la gravure des espaceurs ne doit pas entraver la croissance de silicium par épitaxie

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44

Choi, Tae-Seop. "Copper, silver, and gold etching with H₂ and CH₄ based plasmas." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/53043.

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This thesis describes investigations on Cu, Ag, and Au subtractive etching by H₂ and CH₄ plasmas below room temperature. Both blanket film of Cu, Ag, and Au etching and patterning studies were performed for the applications of these metals as interconnects in electronic devices and photonic devices to replace current Damascene process. The nm scale Cu patterning in H₂ plasma was demonstrated by etching Ta/Cu/Ta stacks. Also, Ag and Au etching was feasible in H₂ plasma unlike other transition metals such as Ti, Ta, Ni, Cr, Al, and Pt indicating the etching chemistry based on the similar electro

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45

Steel, William H. "On the properties of plasma crystals." Thesis, University of Oxford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.326021.

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46

Jin, Weidong 1975. "Study of plasma-surface kinetics and feature profile simulation of poly-silicon etching in Cl²/HBr plasma." Thesis, Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/28357.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, February 2004.<br>Includes bibliographical references.<br>This work characterized the Cl2/HBr ion enhanced plasma-surface interactions with poly-silicon as a function of the gas composition, ion energy, ion incident angle and other important process parameters. A realistic inductively coupled plasma beam apparatus capable of generating ions and neutrals representative of real commercial etcher was constructed and utilized to simulate accurately a high density plasma environment. Etching rate of poly- silicon

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47

Laudrel, Edouard. "Gravure de titane pour applications biomédicales." Thesis, Orléans, 2017. http://www.theses.fr/2017ORLE2035.

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Des efforts de miniaturisation sont nécessaires dans le domaine des dispositifs actifs implantables afin de limiter l’invasivité et de réduire les risques de complications suite aux opérations chirurgicales. Les marges de progression pour la réduction des dimensions tendent à se réduire pour les systèmes actuels tels que les stimulateurs cardiaques, les neurostimulateurs ou les capteurs autonomes in vivo. Une rupture technologique est nécessaire pour permettre de repousser les limites des systèmes actuels. Le titane est un matériau possédant des propriétés de biocompatibilité. Il est stable et

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48

Morris, Bryan George Oneal. "In situ monitoring of reactive ion etching." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31688.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010.<br>Committee Chair: May, Gary; Committee Member: Brand,Oliver; Committee Member: Hasler,Paul; Committee Member: Kohl,Paul; Committee Member: Shamma,Jeff. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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49

Little, Thomas William. "Surface science studies on the interaction of nitrogen trifluoride ion beams and plasmas with silicon /." Thesis, Connect to this title online; UW restricted, 1999. http://hdl.handle.net/1773/10613.

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50

Wohlfart, Ellen [Verfasser]. "Nanopatterning of poly(ethylene terephthalate) by plasma etching / vorgelegt von Ellen Wohlfart." Stuttgart : Max-Planck-Inst. für Metallforschung, 2010. http://d-nb.info/1012342662/34.

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