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Artykuły w czasopismach na temat „Plasma etching”

Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 25 lipca 2025

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1

Гармаш, В. И., В. Е. Земляков, В. И. Егоркин, А. В. Ковальчук та С. Ю. Шаповал. "Исследование влияния атомарного состава на скорость плазмохимического травления нитрида кремния в силовых транзисторах на основе AlGaN/GaN-гетероперехода". Физика и техника полупроводников 54, № 8 (2020): 748. http://dx.doi.org/10.21883/ftp.2020.08.49646.9398.

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The effect of atomic composition on the rate of plasma chemical etching of silicon nitride in power transistors based on an AlGaN / GaN heterojunction is studied. It is shown how the subsequent process of its plasma-chemical etching depends on the configuration of the incorporation of hydrogen impurity atoms into the molecular structure of the silicon nitride deposited in the plasma. The dependence of the etching rate on the parameters of the process (the working pressure in the chamber, the power of the plasma generator, the flow of working gases, the deposition temperature) is investigated.

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Mayer, Thomas M. "Plasma etching." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 44, no. 4 (1990): 484–85. http://dx.doi.org/10.1016/0168-583x(90)90013-k.

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Cheng, Kenneth J., Weicong Ma, and Philip D. Evans. "Differential Etching of Rays at Wood Surfaces Exposed to an Oxygen Glow Discharge Plasma." Materials 17, no. 2 (2024): 521. http://dx.doi.org/10.3390/ma17020521.

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Basswood samples were exposed to oxygen glow-discharge plasmas for 30 min, and etching of radial and tangential longitudinal surfaces was measured. It was hypothesized that there would be a positive correlation between etching and plasma energy, and differential etching of wood surfaces because of variation in the microstructure and chemical composition of different woody tissues. Etching at the surface of basswood samples was examined using profilometry. Light and scanning electron microscopy were used to examine the microstructure of samples exposed to plasma. There was a large effect of pla

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Lee, Youngseok, Heejung Yeom, Daehan Choi, et al. "Database Development of SiO2 Etching with Fluorocarbon Plasmas Diluted with Various Noble Gases of Ar, Kr, and Xe." Nanomaterials 12, no. 21 (2022): 3828. http://dx.doi.org/10.3390/nano12213828.

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In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO2 etching, with Ar typically employed in the dilution of the FC plasma due to its cost effectiveness and accessibility. While it has been reported that plasmas with other noble gases, namely Kr and Xe, have distinct physical properties such as electron density and temperature, their implementation into plasma etching has not been sufficiently studied. In this work, we conducted SiO2 etching with FC plasmas diluted with different noble gases, i.e., FC precursors of C4F8 and CH2F2 with Ar, Kr, or Xe, under various gas f

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5

Park, Jin-Seong, In-Sung Park, Seon Yong Kim, et al. "Plasma Etching of SiO2 with CF3I Gas in Plasma-Enhanced Chemical Vapor Deposition Chamber for In-Situ Cleaning." Science of Advanced Materials 11, no. 12 (2019): 1667–72. http://dx.doi.org/10.1166/sam.2019.3634.

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Non-global-warming CF3I gas has been investigated as a removal etchant for SiO2 film. Thermally fabricated SiO2 films were etched by the plasma generated with a gas mixture of CF3I and O2 (CF3I/O2) in the plasma-enhanced chemical vapor deposition chamber. The etch rate of SiO2 films was studied along with the process parameters of plasma etching such as chamber pressure, etching gas flow ratio of CF3I to CF3I/O2, plasma power, and chamber temperature. Increasing the chamber pressure from 400 to 1,000 mTorr decreased the etch rate of SiO2 film. The etch rate of this film showed a minimum value

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6

Lakrathok, Anantachai, Jakrapong Supadech, Chana Leepattarapongpan, et al. "Design of the comb-drive structure to reduce asymmetry lateral plasma etching on the cavity SOI substrate for MEMS fabrication." Journal of Physics: Conference Series 2934, no. 1 (2025): 012027. https://doi.org/10.1088/1742-6596/2934/1/012027.

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Abstract A conventional microelectromechanical system (MEMS) fabricated using deep-reactive ion etching (DRIE) on a silicon-on-insulator (SOI) wafer and wet etching with hydrofluoric acid (HF) encounters challenges related to isotropic etching, such as microstructure stiction, etched byproduct contamination, and over-etching of the side protective oxide layer. Even with the utilization of cavity SOI (C-SOI) wafers, certain movable structures can still experience damage due to asymmetry in lateral plasma etching caused by the uneven distribution of plasma ions and etchant radicals. This investi

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7

Efremov, Alexander M., Alexander V. Bobylev, Ekaterina M. Kaznacheeva, and Kwang-Ho Kwon. "ON EFFECTS OF INITIAL CF4 + CHF3 + O2 MIXTURE COMPOSITION ON PLASMA PARAMETERS AND REACTIVE-ION ETCHING OF SILICON." ChemChemTech 68, no. 1 (2024): 39–47. https://doi.org/10.6060/ivkkt.20256801.7096.

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In this work, we discussed how the CF4/CHF3 ratio in CF4 + CHF3 + O2 gas mixture does influence steady-state plasma composition and silicon etching kinetics in a conventional reactive-ion process. Plasma diagnostics by double Langmuir probes delivered the information on electro-physical plasma parameters and provided input data for the modeling of plasma chemistry. As a result, we confirmed basic properties of CF4 + O2 and CHF3 + O2 plasmas known from previous works as well as analyzed formation/decay kinetics for plasma active species in the three-component gas mixture. In particular, it was

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8

Rahim, Rosminazuin A., Badariah Bais, and Majlis Burhanuddin Yeop. "Double-Step Plasma Etching for SiO₂ Microcantilever Release." Advanced Materials Research 254 (May 2011): 140–43. http://dx.doi.org/10.4028/www.scientific.net/amr.254.140.

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In this paper, an isotropic dry plasma etching was used to release the suspended SiO2 microcantilever from the substrate of SOI wafer. Employing the plasma dry etching technique, the frontside etching for the SiO2 microcantilever release is done using the Oxford Plasmalab System 100. To obtain the optimum condition for the microcantilever release using the plasma etcher, the etching parameters involved are 100 sccm of SF6 flow, 2000 W of capacitively coupled plasma (CCP) power, 3 W of inductively coupled plasma (ICP) power, 20°C of etching temperature and 30 mTorr chamber pressure. The optimum

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9

Hao, Yuhua, and Xia Wang. "Effects of the Photoelectrochemical Etching in Hydrogen Fluride (HF) on the Optoelectrical Properties of Ga₂O₃." Journal of Physics: Conference Series 2112, no. 1 (2021): 012006. http://dx.doi.org/10.1088/1742-6596/2112/1/012006.

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Abstract Photoelectrochemical (PEC) etching is preferred to produce micro-and nano-structures for constructing Ga2O3-based electronics and optoelectronics, owing to its numerous controllable parameters. During the devices fabrications, beyond the wet chemical and dry (plasma) etching produces, PEC etching also leads to device degradations inordinately. In this work, the Ga2O3 thin film was PEC etched by hydrogen fluride (HF) etchant, and its opto-electric deep-ultraviolet sensing performances, including photo-to-dark current ratio, responsivity, and response speed, before and after PEC etching

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10

Lee, Ji Yeon, Hong Seong Gil, Woo Chang Park, Yun Jong Jang, Dong Woo Kim, and Geun Young Yeom. "Development of a Highly Selective Etching Process for SiO₂ over Si and SiN_x Using F/H-Based Remote Plasmas and a Vapor Phase Solvent." ECS Meeting Abstracts MA2024-02, no. 33 (2024): 4961. https://doi.org/10.1149/ma2024-02334961mtgabs.

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Isotropic etching is traditionally performed using liquid-based wet etching techniques. However, with the increasing integration of devices, achieving conformal etching in high aspect ratio patterns becomes difficult, as liquid chemicals are limited in their ability to penetrate deep into these structures. Moreover, during the drying phase following chemical treatment, surface tension can lead to pattern collapse. Consequently, there is a growing need for dry isotropic etching methods to replace conventional wet etching in advanced device manufacturing. In cases where high selectivity for SiO2

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11

Lee, Ji Yeon, Dae Whan Kim, Hong Seong Gil, et al. "Selective Isotropic Dry Etching of SiO₂ Using F/H-Based Pulsed Remote Plasma and a Vapor Phase Solvent." ECS Meeting Abstracts MA2024-01, no. 30 (2024): 1516. http://dx.doi.org/10.1149/ma2024-01301516mtgabs.

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Isotropic etching generally employs liquid-based wet etching techniques. However, due to the high integration of devices, conformal etching is challenging in patterns with a high aspect ratio because liquid chemicals struggle to penetrate inside the pattern. Additionally, during the drying process after chemical treatment, pattern collapse is observed due to surface tension. Therefore, there is a need for dry isotropic etching techniques to replace wet etching techniques in next-generation device manufacturing processes. Typically, when high selectivity SiO2 isotropic dry etching is required,

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12

VOSHCHENKOV, ALEXANDER M. "FUNDAMENTALS OF PLASMA ETCHING FOR SILICON TECHNOLOGY (PART 1)." International Journal of High Speed Electronics and Systems 01, no. 03n04 (1990): 303–45. http://dx.doi.org/10.1142/s0129156490000149.

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Over the past decade, as the rapid evolution of semiconductor technology has progressed towards submicron design rules, plasma (dry) etching has supplanted simple wet etching processes for the transfer of patterns. To understand the underlying need for development of plasma etching, a brief background of integrated semiconductor technology is presented. Along with a historical perspective of the evolution of plasma etching, the relationship of plasma etching to lithography needs, its basic characteristics and advantages over wet chemical processing are discussed. Following this, relevant conce

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13

Hershkowitz, Noah, and Robert A. Breun. "Diagnostics for plasma processing (etching plasmas) (invited)." Review of Scientific Instruments 68, no. 1 (1997): 880–85. http://dx.doi.org/10.1063/1.1147752.

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Petrova, Anna, Vadim Pinaev, Alexey Safonov, and Sergey Khmel. "Etching of a fluoropolymer coating synthesized by the hot wire chemical vapor deposition method in a low-frequency induction discharge plasma." E3S Web of Conferences 578 (2024): 01028. http://dx.doi.org/10.1051/e3sconf/202457801028.

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The process of plasma etching for the formation of a biphilic pattern in a continuous homogeneous fluoropolymer coating on a copper substrate is studied. Argon or oxygen plasma of low frequency ferromagnetic amplified induction discharge is used to etch a fluoropolymer coating. Plasma etching was carried out through a mask with parallel slits. The etching rate in argon plasma was 10 nm/min, the etching rate in oxygen plasma was 60 nm/min. Biphilic surfaces were obtained, consisting of fluoropolymer strips on a copper surface. It has been shown that when using both argon plasma and oxygen plasm

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15

Ku, Ching-Ming, and Stone Cheng. "Factor Design for the Oxide Etching Process to Reduce Edge Particle Contamination in Capacitively Coupled Plasma Etching Equipment." Applied Sciences 12, no. 11 (2022): 5684. http://dx.doi.org/10.3390/app12115684.

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During the oxide layer etching process, particles in capacitively coupled plasma etching equipment adhere to the wafer edge and cause defects that reduce the yield from semiconductor wafers. To reduce edge particle contamination in plasma etching equipment, we propose changes in the voltage and temperature of the electrostatic chuck, plasma discharge sequence, gas flow, and pressure parameters during the etching process. The proposed edge particle reduction method was developed by analyzing particle maps after wafer etching. Edge particle adherence in plasma etching equipment can be reduced by

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16

Song, Wan Soo, Ju Eun Kang, and Sang Jeen Hong. "Spectroscopic Analysis of CF4/O2 Plasma Mixed with N2 for Si3N4 Dry Etching." Coatings 12, no. 8 (2022): 1064. http://dx.doi.org/10.3390/coatings12081064.

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Silicon nitride (Si3N4) etching using CF4/O2 mixed with N2 has become very popular in 3D NAND flash structures. However, studies on Si3N4 dry etching based on optical emission spectroscopy (OES) are lacking; in particular, no study has reported the use of OES for analyzing N2-mixed CF4/O2 plasma. Thus, this study demonstrates an OES-based approach for analyzing a mixed-gas plasma for etching Si3N4 thin films. The state of each single gas plasma of CF4, O2, and N2 as well as that of mixed plasmas of heterogeneous gases CF4/O2, CF4/N2, and O2/N2 was investigated to analyze the mixed-gas plasma.

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17

Jang, Jin Nyoung, Jong Hwa Lee, Sangheon Lee, et al. "64‐4: ECR Plasma Source for Copper Thin Film Dry Etching." SID Symposium Digest of Technical Papers 55, no. 1 (2024): 878–80. http://dx.doi.org/10.1002/sdtp.17673.

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Dry etching process of thin copper films using high electron temperature ECR (electron cyclotron resonance) plasma source is developed. With ECR source and RIE (reactive ion etching) mode, etching rate of 175 nm/min is achieved. Dry etching is performed under high electron temperature plasma source with low temperature substrate and employing a reactive ion etching mode. To compensate the large area etching uniformity, scanning low temperature susceptor is adopted. Rectangular‐type microwave slot antenna (ReSLAN) is used to generate ECR plasma.

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Saito, Suguru, Yoshiya Hagimoto, Hayato Iwamoto, and Yusuke Muraki. "Mechanism of Plasma-Less Gaseous Etching Process for Damaged Oxides from the Ion Implantation Process." Solid State Phenomena 145-146 (January 2009): 227–30. http://dx.doi.org/10.4028/www.scientific.net/ssp.145-146.227.

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Recently, plasma-less gaseous etching processes have attracted attention for their interesting etching properties. Previously, we reported on the etching properties of theses processes for various kinds of oxides and revealed that they reduce the etch rate of the chemical-vapor-deposited (CVD) oxides more than the conventional wet etching process does [1]. Our results also revealed that depressions called divots in the CVD oxide of the shallow trench isolation (STI) became smaller in size by substituting a plasma-less gaseous etching process for the conventional wet etching process. In semicon

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Chen, Yun, Dachuang Shi, Yanhui Chen, et al. "A Facile, Low-Cost Plasma Etching Method for Achieving Size Controlled Non-Close-Packed Monolayer Arrays of Polystyrene Nano-Spheres." Nanomaterials 9, no. 4 (2019): 605. http://dx.doi.org/10.3390/nano9040605.

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Monolayer nano-sphere arrays attract great research interest as they can be used as templates to fabricate various nano-structures. Plasma etching, and in particular high-frequency plasma etching, is the most commonly used method to obtain non-close-packed monolayer arrays. However, the method is still limited in terms of cost and efficiency. In this study, we demonstrate that a low frequency (40 kHz) plasma etching system can be used to fabricate non-close-packed monolayer arrays of polystyrene (PS) nano-spheres with smooth surfaces and that the etching rate is nearly doubled compared to that

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Jin, Lei, Zhuorui Tang, Long Chen, et al. "Sidewall Modification Process for Trench Silicon Power Devices." Electronics 12, no. 11 (2023): 2385. http://dx.doi.org/10.3390/electronics12112385.

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In this study, trench sidewall modification processes were designed to improve profile uniformity and thereby enhance the electrical performance of silicon power devices in large-scale production. The effects of trench sidewall modification on the morphology, structure and electrical properties were studied. Plasma-induced damage in etching processes was also observed and briefly explained. Straight and smooth sidewall profiles were achieved through adjusting the SF6/CHF3 proportion in a combined etchant gas flow in the main etching procedure. By comparing HRSEM images from different etching p

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Guan, Lulu, Xingyu Li, Dongchen Che, Kaidong Xu, and Shiwei Zhuang. "Plasma atomic layer etching of GaN/AlGaN materials and application: An overview." Journal of Semiconductors 43, no. 11 (2022): 113101. http://dx.doi.org/10.1088/1674-4926/43/11/113101.

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Abstract With the development of the third generation of semiconductor devices, it is essential to achieve precise etching of gallium nitride (GaN) materials that is close to the atomic level. Compared with the traditional wet etching and continuous plasma etching, plasma atomic layer etching (ALE) of GaN has the advantages of self-limiting etching, high selectivity to other materials, and smooth etched surface. In this paper the basic properties and applications of GaN are presented. It also presents the various etching methods of GaN. GaN plasma ALE systems are reviewed, and their similariti

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Hui, L. S., E. Whiteway, M. Hilke, and A. Turak. "Effect of post-annealing on the plasma etching of graphene-coated-copper." Faraday Discuss. 173 (2014): 79–93. http://dx.doi.org/10.1039/c4fd00118d.

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High temperature deposition of graphene on Cu by chemical vapor deposition can be used to produce high quality films. However, these films tend to have a non-equilibrium structure, with relatively low graphene adhesion. In this study, samples of graphene grown on copper foils by high temperature CVD were post-deposition annealed at temperatures well below the critical temperature of Cu. Resistance to etching under plasma was examined to assess the mechanical robustness of the graphene on the Cu surface, analyzed using optical and Raman microscopies. We found a correlation between the post-anne

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Filippov, I. A., L. E. Velikovskiy, and V. A. Shakhnov. "Plasma-Chemical Etching of Thin Silver Films for Applications of Plasmonics by Inductive-Coupled Argon Plasma." Herald of the Bauman Moscow State Technical University. Series Instrument Engineering, no. 4 (133) (December 2020): 165–80. http://dx.doi.org/10.18698/0236-3933-2020-4-165-180.

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The study focuses on the processes of plasma-chemical etching of silver films for the manufacture of photonic elements --- nanoscale light sources, and examines the theoretical foundations of etching processes and the process of plasma formation in plasma-chemical etching facilities. We assessed the introduced technology when forming topological elements in thin films of silver metal, and identified key problems, such as redeposition and non-volatility of the material. The paper presents the results of simulating the etching process for several critical submicron sizes, and, based on the simul

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Lee, Junmyung, Alexander Efremov, Geun Young Yeom, Nomin Lim, and Kwang-Ho Kwon. "Application of Si and SiO2 Etching Mechanisms in CF4/C4F8/Ar Inductively Coupled Plasmas for Nanoscale Patterns." Journal of Nanoscience and Nanotechnology 15, no. 10 (2015): 8340–47. http://dx.doi.org/10.1166/jnn.2015.11256.

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An investigation of the etching characteristics and mechanism for both Si and SiO2 in CF4/C4F8/Ar inductively coupled plasmas under a constant gas pressure (4 mTorr), total gas flow rate (40 sccm), input power (800 W), and bias power (150 W) was performed. It was found that the variations in the CF4/C4F8 mixing ratio in the range of 0–50% at a constant Ar fraction of 50% resulted in slightly non-monotonic Si and SiO2 etching rates in CF4-rich plasmas and greatly decreasing etching rates in C4F8-rich plasmas. The zero-dimensional plasma model, Langmuir probe diagnostics, and optical emission sp

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Brokmann, Ulrike, Christoph Weigel, Luisa-Marie Altendorf, Steffen Strehle, and Edda Rädlein. "Wet Chemical and Plasma Etching of Photosensitive Glass." Solids 4, no. 3 (2023): 213–34. http://dx.doi.org/10.3390/solids4030014.

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Photosensitive glasses for radiation-induced 3D microstructuring, due to their optical transparency and thermal, mechanical, and chemical resistance, enable the use of new strategies for numerous microscale applications, ranging from optics to biomedical systems. In this context, we investigated the plasma etching of photosensitive glasses after their exposure and compared it to the established wet chemical etching method, which offers new degrees of freedom in microstructuring control and microsystem fabrication. A CF4/H2 etching gas mixture with a constant volumetric flow of 30 sccm and a va

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Moon, Chang Sung, Keigo Takeda, Makoto Sekine, Yuichi Setsuhara, Masaharu Shiratani, and Masaru Hori. "Combinatorial Plasma Etching Process." Applied Physics Express 2, no. 9 (2009): 096001. http://dx.doi.org/10.1143/apex.2.096001.

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Nishimatsu, Shiger, Keizo Suzuki, Ken Ninomiya, and Ichiro Kanomata. "4462863 Microwave plasma etching." Vacuum 35, no. 1 (1985): 62. http://dx.doi.org/10.1016/0042-207x(85)90107-1.

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Darnon, Maxime, Mathieu de Lafontaine, Maïté Volatier, et al. "Deep germanium etching using time multiplexed plasma etching." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 33, no. 6 (2015): 060605. http://dx.doi.org/10.1116/1.4936112.

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Verdonck, P., G. Brasseur, and J. Swart. "Reactive ion etching and plasma etching of tungsten." Microelectronic Engineering 21, no. 1-4 (1993): 329–32. http://dx.doi.org/10.1016/0167-9317(93)90084-i.

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Gottscho, Richard A., Maria E. Barone, and Joel M. Cook. "Use of Plasma Processing in Making Integrated Circuits and Flat-Panel Displays." MRS Bulletin 21, no. 8 (1996): 38–42. http://dx.doi.org/10.1557/s0883769400035697.

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The ever-shrinking dimensions of microelectronic devices has mandated the use of plasma processing in integrated circuit (IC) factories worldwide. Today the plasma-processing industry has grown to over $3 billion in revenues per year, well in excess of predictions made only a few years ago. Plasma etching and deposition systems are also found throughout flat-panel-display (FPD) factories despite the much larger dimensions of thin-film transistors (TFTs) that are used to switch picture elements (pixels) on and off. Besides the use of plasma in etching and depositing thin films, other processes

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Sung, Dain, Long Wen, Hyunwoo Tak, Hyejoo Lee, Dongwoo Kim, and Geunyoung Yeom. "Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma." Materials 15, no. 4 (2022): 1300. http://dx.doi.org/10.3390/ma15041300.

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The etching properties of C6F6/Ar/O2 in both an inductively coupled plasma (ICP) system and a capacitively coupled plasma (CCP) system were evaluated to investigate the effects of high C/F ratio of perfluorocarbon (PFC) gas on the etch characteristics of SiO2. When the SiO2 masked with ACL was etched with C6F6, for the CCP system, even though the etch selectivity was very high (20 ~ infinite), due to the heavy-ion bombardment possibly caused by the less dissociated high-mass ions from C6F6, tapered SiO2 etch profiles were observed. In the case of the ICP system, due to the higher dissociation

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Lim, Nomin, Yeon Sik Choi, Alexander Efremov, and Kwang-Ho Kwon. "Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar." Materials 14, no. 7 (2021): 1595. http://dx.doi.org/10.3390/ma14071595.

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This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in res

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Rammal, Mohammad, Ahmed Rhallabi, Delphine Néel, Dalila Make, Alexandre Shen, and Abdou Djouadi. "AlN Etching under ICP Cl2/BCl3/Ar Plasma Mixture: Experimental Characterization and Plasma Kinetic Model." MRS Advances 4, no. 27 (2019): 1579–87. http://dx.doi.org/10.1557/adv.2019.84.

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AbstractAlN etching with chloride plasmas is studied. The experimental results show that the etching of AlN under a low pressure Cl2/Ar plasma mixture in moderate DC bias is not possible. The addition of BCl3 gas to Cl2/Ar mixture allows the etching of AlN materials. However the obtained properties of etched AlN is still not in conformity with the technological specification especially for the condition which the etched AlN must be kept only along the sidewall of the InP laser cavity and be removed elsewhere (selective etching). To know more about the effect of the BCl3 addition to the Cl2/Ar

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Krumpolec, Richard, Jana Jurmanová, Miroslav Zemánek, Jakub Kelar, Dušan Kováčik, and Mirko Černák. "Selective Plasma Etching of Polymer-Metal Mesh Foil in Large-Area Hydrogen Atmospheric Pressure Plasma." Applied Sciences 10, no. 20 (2020): 7356. http://dx.doi.org/10.3390/app10207356.

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We present a novel method of surface processing of complex polymer-metal composite substrates. Atmospheric-pressure plasma etching in pure H2, N2, H2/N2 and air plasmas was used to fabricate flexible transparent composite poly(methyl methacrylate) (PMMA)-based polymer film/Ag-coated Cu metal wire mesh substrates with conductive connection sites by the selective removal of the thin (~10–100 nm) surface PMMA layer. To mimic large-area roll-to-roll processing, we used an advanced alumina-based concavely curved electrode generating a thin and high-power density cold plasma layer by the diffuse cop

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Li, Jie, Yongjae Kim, Seunghun Han, and Heeyeop Chae. "Ion-Enhanced Etching Characteristics of sp2-Rich Hydrogenated Amorphous Carbons in CF4 Plasmas and O2 Plasmas." Materials 14, no. 11 (2021): 2941. http://dx.doi.org/10.3390/ma14112941.

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The sp2-rich hydrogenated amorphous carbon (a-C:H) is widely adopted as hard masks in semiconductor-device fabrication processes. The ion-enhanced etch characteristics of sp2-rich a-C:H films on ion density and ion energy were investigated in CF4 plasmas and O2 plasmas in this work. The etch rate of sp2-rich a-C:H films in O2 plasmas increased linearly with ion density when no bias power was applied, while the fluorocarbon deposition was observed in CF4 plasmas instead of etching without bias power. The etch rate was found to be dependent on the half-order curve of ion energy in both CF4 plasm

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Zhou, Yingliang, Hanyang Li, Ji-Eun Jung, Sang Ki Nam, and Vincent M. Donnelly. "Effects of N₂ and O₂ plasma treatments of quartz surfaces exposed to H₂ plasmas." Journal of Vacuum Science & Technology A 40, no. 5 (2022): 053002. http://dx.doi.org/10.1116/6.0001896.

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This paper presents a study of methods for reducing the erosion of SiO2 in a high-power density (10–40 W/cm3), purely inductive H2/Ar plasma, using a toroidal transformer-coupled plasma source operated at 0.5 Torr. Quartz samples were exposed to plasma densities of 1–3 × 1013 cm−3 and H atom temperatures of 4000–8000 K [electron densities and H translational temperatures were measured by Stark and Doppler broadening of H Balmer-β (Hβ) emission at 486.1 nm]. Laser interferometry was employed to monitor time-resolved temperatures of the quartz substrate. Etching rates were measured by stylus pro

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Kawasaki, Ryohei, Kenta Irikura, Hitoshi Habuka, Yoshinao Takahashi, and Tomohisa Kato. "Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer." Materials Science Forum 1004 (July 2020): 167–72. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.167.

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For improving the productivity of the semiconductor silicon carbide power devices, a very large diameter wafer process was studied, particularly for the non-plasma wafer etching using the chlorine trifluoride gas. Taking into account the motion of heavy gas, such as the chlorine trifluoride gas having the large molecular weight, the transport phenomena in the etching reactor were evaluated and designed using the computational fluid dynamics. The simple gas distributor design for a 200-mm-diameter wafer was evaluated in detail in order to uniformly spread the etchant gas over the wide wafer sur

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Higashi, Seiichiro, Hibiki Kato, Jiawen Yu, Kyohei Matsumoto, and Hiroaki Hanafusa. "(Invited) Atmospheric-Pressure Reactive Thermal Plasma Jet Technology for Decarbonization of Semiconductor Manufacturing." ECS Meeting Abstracts MA2023-02, no. 30 (2023): 1546. http://dx.doi.org/10.1149/ma2023-02301546mtgabs.

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Semiconductor market continues to grow and is expected to hit a trillion dollar in 2030. On the other hand, CO2 emission from semiconductor industry has been anticipated to become one of the serious issues regarding carbon neutral commitments. Organic solvent, which is used for cleaning and wet etching processes, is one of the sources to emit CO2 during device manufacturing. They are recycled and reused, nevertheless, huge amount is disposed. Replacing the wet etching by dry process is a quite effective approach, however, the etching rates by conventional plasma etchings are quite low compared

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Lin, Kang-Yi, Christian Preischl, Christian Felix Hermanns, et al. "SiO₂ etching and surface evolution using combined exposure to CF₄/O₂ remote plasma and electron beam." Journal of Vacuum Science & Technology A 40, no. 6 (2022): 063004. http://dx.doi.org/10.1116/6.0002038.

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Electron-based surface activation of surfaces functionalized by remote plasma appears like a flexible and novel approach to atomic scale etching and deposition. Relative to plasma-based dry etching that uses ion bombardment of a substrate to achieve controlled material removal, electron beam-induced etching (EBIE) is expected to reduce surface damage, including atom displacement, surface roughness, and undesired material removal. One of the issues with EBIE is the limited number of chemical precursors that can be used to functionalize material surfaces. In this work, we demonstrate a new confi

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Ehrhardt, Martin, Pierre Lorenz, Jens Bauer, et al. "Dry Etching of Germanium with Laser Induced Reactive Micro Plasma." Lasers in Manufacturing and Materials Processing 8, no. 3 (2021): 237–55. http://dx.doi.org/10.1007/s40516-021-00147-1.

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AbstractHigh-quality, ultra-precise processing of surfaces is of high importance for high-tech industry and requires a good depth control of processing, a low roughness of the machined surface and as little as possible surface and subsurface damage but cannot be realized by laser ablation processes. Contrary, electron/ion beam, plasma processes and dry etching are utilized in microelectronics, optics and photonics. Here, we have demonstrated a laser-induced plasma (LIP) etching of single crystalline germanium by an optically pumped reactive plasma, resulting in high quality etching. A Ti:Sapph

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Efremov, Alexander M., Sergey A. Smirnov, Vladimir B. Betelin, and Kwang-Ho Kwon. "PLASMA PARAMETERS AND REACTIVE-ION ETCHING KINETICS OF ZnO IN HYDROGEN BROMIDE: THE INFLUENCE OF INERT CARRIER GAS." ChemChemTech 67, no. 12 (2024): 86–95. https://doi.org/10.6060/ivkkt.20246712.7081.

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This work discusses the influence of inert carrier gases, Ar and He, on both gas-phase plasma characteristics and ZnO etching rate under typical reactive-ion etching conditions in the hydrogen bromide environment. Plasma diagnostics by Langmuir probes and 0-dimensional plasma modeling allowed one to compare how the content of given carrier gas does influence electrons-and ions-related plasma parameters, kinetics and densities of plasma active species. It was found that the transition toward Ar- or He-rich plasmas a) causes the growth of electron temperature (due to lower electron energy losses

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Yoon, Junho, Jeongyun Lee, and Won Jong Yoo. "Hydrogen-Induced Damage During the Plasma Etching Process." Nano 12, no. 09 (2017): 1750112. http://dx.doi.org/10.1142/s1793292017501120.

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As devices scale down, we need to employ higher ion energy in the plasma etching to meet the requirements for critical dimensions. As a result, physical damage can be more severe. Since hydrogen can penetrate deeply into silicon due to its low mass compared to other species, there is a possibility of electrical degradation by deeply penetrated hydrogen. In this study, we demonstrated hydrogen-induced damage from the plasma etching process. Permeated hydrogen from the plasma etching process increases the amount of interface and bulk defects with increasing bias power, resulting in electrical de

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Tang, Zaifeng, Yukun Lv, Kaiqu Ang, et al. "Investigation of the Etching Resistance of Yttrium Oxyfluoride Coating Deposited via Atmospheric Plasma Spraying Against Cl2/O2 Plasma." Materials 18, no. 9 (2025): 1903. https://doi.org/10.3390/ma18091903.

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Chlorine-based plasma is widely used in key etching applications. However, while etching the wafer materials, chlorine plasma can cause damage to the internal components of the etching chamber, which adversely affects the equipment’s lifespan. As a result, selecting appropriate coating materials for the chamber’s internal components is essential for mitigating corrosion. The etch resistance of these coatings directly impacts not only the quality of wafer production but also the operational safety and maintenance cycle of the etching equipment. In this study, three yttrium oxyfluoride coatings

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Oehrlein, G. S., P. J. Matsuo, M. F. Doemling, et al. "Study of plasma - surface interactions: chemical dry etching and high-density plasma etching." Plasma Sources Science and Technology 5, no. 2 (1996): 193–99. http://dx.doi.org/10.1088/0963-0252/5/2/012.

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You, Sanghyun, Yu Jong Lee, Heeyeop Chae, and Chang-Koo Kim. "Plasma Etching of SiO2 Contact Holes Using Hexafluoroisopropanol and C4F8." Coatings 12, no. 5 (2022): 679. http://dx.doi.org/10.3390/coatings12050679.

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This study presents the feasibility of the use of hexafluoroisopropanol (HFIP) as a substitute to perfluorocarbon (PFC) for the plasma etching of SiO2 to confront the continuous increase in demand for PFC emission reduction. SiO2 etching is conducted in HFIP/Ar and C4F8/Ar plasmas, respectively, and its characteristics are compared. The SiO2 etch rates in the HFIP/Ar plasma are higher compared with those in the C4F8/Ar plasma. The thickness of the steady-state fluorocarbon films formed on the surface of SiO2 are lower in the HFIP/Ar plasma compared with in the C4F8/Ar plasma. Higher SiO2 etch

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Tang, Zaifeng, Bing Wang, Kaiqu Ang, et al. "The Study of the Etching Resistance of YOF Coating Deposited by Atmospheric Plasma Spraying in HBr/O2 Plasma." Coatings 14, no. 11 (2024): 1442. http://dx.doi.org/10.3390/coatings14111442.

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Yttrium oxyfluoride (YOF) coatings with different oxygen content were prepared using atmospheric plasma spraying (APS) technology. The etching resistance of the coatings in HBr/O2 plasma was investigated. Shifts in diffraction peaks of the X-ray diffraction, along with XPS analysis conducted before and after etching, demonstrated that Br ions could replace O and F ions and fill the oxygen vacancies after exposure to HBr/O2 plasma, which is supported by the first-principles calculations. Br ions formed a protective layer on the surface of the YOF coating, slowing down further etching by Br ions

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47

Jeong, Won-nyoung, Young-seok Lee, Chul-hee Cho, In-ho Seong, and Shin-jae You. "Investigation into SiO2 Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled." Nanomaterials 12, no. 24 (2022): 4457. http://dx.doi.org/10.3390/nano12244457.

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SiO2 etching characteristics were investigated in detail. Patterned SiO2 was etched using radio-frequency capacitively coupled plasma with pulse modulation in a mixture of argon and fluorocarbon gases. Through plasma diagnostic techniques, plasma parameters (radical and electron density, self-bias voltage) were also measured. In this work, we identified an etching process window, where the etching depth is a function of the radical flux. Then, pulse-off time was varied in the two extreme cases: the lowest and the highest radical fluxes. It was observed that increasing pulse-off time resulted i

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Li, Jie, Laurent Souriau, Shreya Kundu, Philippe Bezard, and Frederic Lazzarino. "Plasma Etch of IGZO Thin Film and IGZO/SiO₂ Interface Diffusion in Inductively Coupled CH₄/Ar Plasmas." ECS Meeting Abstracts MA2024-02, no. 20 (2024): 1788. https://doi.org/10.1149/ma2024-02201788mtgabs.

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InGaZnO (IGZO) has recently gained considerable attention as a promising alternative channel material for semiconductor devices. Thoroughly investigating and precisely controlling the manufacturing processes, including plasma etching of IGZO material, become essential for the fabrication of IGZO-channel devices. In this work the etching characteristics of IGZO thin films were systemically investigated in inductively coupled CH4/Ar plasmas with various gas ratios, bias voltages, and surface temperatures. The ion flux in CH4/Ar plasmas were analyzed using bias power and voltage, and the relative

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Li, Qingzhi, Yubin Zhang, Zhaohua Shi, Weihua Li, and Xin Ye. "Effect of Plasma Etching Depth on Subsurface Defects in Quartz Crystal Elements." Crystals 13, no. 10 (2023): 1477. http://dx.doi.org/10.3390/cryst13101477.

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After the plasma etching of quartz crystal, the crystal lattice underwent changes in response to the length of plasma etching time. The lattice arrangement of quartz crystal was the most orderly after plasma etching for 1000 nm, and with the increase in etching time, the lattice arrangement became less orderly again. The weak absorption value of quartz crystal was also consistent with this conclusion. In this paper, we investigated the effect of lattice changes on the damage threshold of quartz crystals by characterizing the quartz crystals using Reactive Ion Etching (RIE). We also examined th

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VOSHCHENKOV, A. M. "PLASMA ETCHING PROCESSES FOR GIGAHERTZ SILICON INTEGRATED CIRCUITS (Part 2)." International Journal of High Speed Electronics and Systems 02, no. 01n02 (1991): 45–88. http://dx.doi.org/10.1142/s0129156491000041.

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In the preceding paper of this series, “Fundamentals of plasma etching for silicon technology (Part 1)”,1 a historical perspective of the evolution of plasma etching, its relationship to lithography needs, basic characteristics of plasma etching, advantages over wet chemical processing, and a practical viewpoint of the underlying fundamental concepts of plasma physics and chemistry were presented. In this paper, original work in plasma etcher design and a variety of process applications to multigigahertz rate silicon technology as practiced in Bell Laboratories, Holmdel, are described.

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