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Gotowe bibliografie tematyczne / Semiconducting Quantum Materials

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Gotowa bibliografia na temat „Semiconducting Quantum Materials”

Autor: Grafiati

Data publikacji: 7 września 2023

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Artykuły w czasopismach na temat "Semiconducting Quantum Materials"

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Zhang, Dao Hua. "Semiconducting Materials for Photonic Technology." Materials Science Forum 859 (May 2016): 96–103. http://dx.doi.org/10.4028/www.scientific.net/msf.859.96.

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Semiconducting materials are important photonic materials and the technologies developed have been utilized in many fields of the modern society and they are closely related to the quality of our life. The main applications of the materials are for light source and sensing originated from interaction of photons and matters. In this invited talk, I will first present our work on the properties of the semiconducting materials and their applications as lasers and photodetectors, and then present integrated hybrid subwavelength structures which show significant enhancement on device performance. I

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Cocchi, Caterina, and Holger-Dietrich Saßnick. "Ab Initio Quantum-Mechanical Predictions of Semiconducting Photocathode Materials." Micromachines 12, no. 9 (2021): 1002. http://dx.doi.org/10.3390/mi12091002.

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Ab initio Quantum-Mechanical methods are well-established tools for material characterization and discovery in many technological areas. Recently, state-of-the-art approaches based on density-functional theory and many-body perturbation theory were successfully applied to semiconducting alkali antimonides and tellurides, which are currently employed as photocathodes in particle accelerator facilities. The results of these studies have unveiled the potential of ab initio methods to complement experimental and technical efforts for the development of new, more efficient materials for vacuum elec

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Banerjee, Pritam, Chiranjit Roy, Juan Jesús Jiménez, Francisco Miguel Morales, and Somnath Bhattacharyya. "Atomically resolved 3D structural reconstruction of small quantum dots." Nanoscale 13, no. 16 (2021): 7550–57. http://dx.doi.org/10.1039/d1nr00466b.

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Zentel, Rudolf. "Polymer Coated Semiconducting Nanoparticles for Hybrid Materials." Inorganics 8, no. 3 (2020): 20. http://dx.doi.org/10.3390/inorganics8030020.

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This paper reviews synthetic concepts for the functionalization of various inorganic nanoparticles with a shell consisting of organic polymers and possible applications of the resulting hybrid materials. A polymer coating can make inorganic nanoparticles soluble in many solvents as individual particles and not only do low molar mass solvents become suitable, but also polymers as a solid matrix. In the case of shape anisotropic particles (e.g., rods) a spontaneous self-organization (parallel orientation) of the nanoparticles can be achieved, because of the formation of lyotropic liquid crystall

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Mokkath, Junais Habeeb. "Dopant-induced localized light absorption in CsPbX3 (X = Cl, Br, I) perovskite quantum dots." New Journal of Chemistry 43, no. 46 (2019): 18268–76. http://dx.doi.org/10.1039/c9nj03784e.

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Reichardt, Sven, and Ludger Wirtz. "Nonadiabatic exciton-phonon coupling in Raman spectroscopy of layered materials." Science Advances 6, no. 32 (2020): eabb5915. http://dx.doi.org/10.1126/sciadv.abb5915.

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We present an ab initio computational approach for the calculation of resonant Raman intensities, including both excitonic and nonadiabatic effects. Our diagrammatic approach, which we apply to two prototype, semiconducting layered materials, allows a detailed analysis of the impact of phonon-mediated exciton-exciton scattering on the intensities. In the case of bulk hexagonal boron nitride, this scattering leads to strong quantum interference between different excitonic resonances, strongly redistributing oscillator strength with respect to optical absorption spectra. In the case of MoS2, we

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Liang, Shuang, Ze Ma, Nan Wei, Huaping Liu, Sheng Wang, and Lian-Mao Peng. "Solid state carbon nanotube device for controllable trion electroluminescence emission." Nanoscale 8, no. 12 (2016): 6761–69. http://dx.doi.org/10.1039/c5nr07468a.

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Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices.

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Banks, Peter A., Jefferson Maul, Mark T. Mancini, Adam C. Whalley, Alessandro Erba, and Michael T. Ruggiero. "Thermoelasticity in organic semiconductors determined with terahertz spectroscopy and quantum quasi-harmonic simulations." Journal of Materials Chemistry C 8, no. 31 (2020): 10917–25. http://dx.doi.org/10.1039/d0tc01676d.

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The thermomechanical response of organic semiconducting solids – an essential aspect to consider for the design of flexible electronics – was determined using terahertz vibrational spectroscopy and quantum quasiharmonic approximation simulations.

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Feng, Hao-Lin, Wu-Qiang Wu, Hua-Shang Rao, Long-Bin Li, Dai-Bin Kuang, and Cheng-Yong Su. "Three-dimensional hyperbranched TiO2/ZnO heterostructured arrays for efficient quantum dot-sensitized solar cells." Journal of Materials Chemistry A 3, no. 28 (2015): 14826–32. http://dx.doi.org/10.1039/c5ta02269j.

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KIM, Jaewook. "Advances in Floating Zone Crystal Growth." Physics and High Technology 31, no. 9 (2022): 22–25. http://dx.doi.org/10.3938/phit.31.030.

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Optical floating zone (OFZ) method has been applied to grow various materials for semiconducting industry applications as well as basic research on quantum materials. This article describes the OFZ method in detail and briefly introduces two recent advances in floating zone method by incorporating new techniques, namely, laser diode as optical source and high pressure environments. These developments have made it possible to grow materials that were previously challenging in conventional OFZ method and greatly expanded the range of accessible systems to search for exotic quantum phenomena.

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Rozprawy doktorskie na temat "Semiconducting Quantum Materials"

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Flatten, Lucas Christoph. "Quantum electrodynamics of semiconducting nanomaterials in optical microcavities." Thesis, University of Oxford, 2017. http://ora.ox.ac.uk/objects/uuid:a5f4797f-ea23-49e4-bd1e-2483154508d6.

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Semiconducting nanocrystals in open-access microcavities are promising systems in which enhanced light-matter interactions lead to quantum effects such as the modulation of the spontaneous emission process and exciton-polariton formation. In this thesis I present improvements of the open cavity platform which serves to confine the electromagnetic field with mode volumes down to the λ<sup>3</sup> regime and demonstrate results in both the weak and strong coupling regimes of cavity quantum electrodynamics with a range of different low-dimensional materials. I report cavity fabrication det

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Bandyopadhyay, Avra Sankar. "Light Matter Interactions in Two-Dimensional Semiconducting Tungsten Diselenide for Next Generation Quantum-Based Optoelectronic Devices." Thesis, University of North Texas, 2020. https://digital.library.unt.edu/ark:/67531/metadc1752376/.

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In this work, we explored one material from the broad family of 2D semiconductors, namely WSe2 to serve as an enabler for advanced, low-power, high-performance nanoelectronics and optoelectronic devices. A 2D WSe2 based field-effect-transistor (FET) was designed and fabricated using electron-beam lithography, that revealed an ultra-high mobility of ~ 625 cm2/V-s, with tunable charge transport behavior in the WSe2 channel, making it a promising candidate for high speed Si-based complimentary-metal-oxide-semiconductor (CMOS) technology. Furthermore, optoelectronic properties in 2D WSe2 based pho

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Zhang, Yu. "Fabrication, structural and spectroscopic studies of wide bandgap semiconducting nanoparticles of ZnO for application as white light emitting diodes." Thesis, Lyon, 2020. http://www.theses.fr/2020LYSEI046.

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La présente thèse étudie les nanoparticules de ZnO incorporées dans une matrice d'acide polyacrylique (PAA) mésosphérique synthétisée via un protocole d'hydrolyse. La structure hybride mésosphérique de ZnO / PAA a précédemment démontré son efficacité pour émettre de la lumière visible dans une large gamme, qui résulte des défauts intrinsèques de niveaux profonds dans les nanocristaux de ZnO. Pour modifier davantage le spectre de photoluminescence (PL) et améliorer le rendement quantique de PL (PL QY) du matériau, le ZnO dopé au métal et le ZnO / PAA revêtu de silice sont fabriqués indépendamme

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Παππάς, Σπυρίδων. "Ανάπτυξη και χαρακτηρισμός προηγμένων υλικών για νανοδιατάξεις". Thesis, 2013. http://hdl.handle.net/10889/6374.

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Το αντικείμενο της παρούσας Διδακτορικής Διατριβής είναι η ανάπτυξη και ο χαρακτηρισμός προηγμένων υλικών για εφαρμογές σε νανοδιατάξεις. Στα πλαίσια αυτής, επικεντρωθήκαμε στην ανάπτυξη και μελέτη μαγνητικών και ημιαγωγικών λεπτών υμενίων που βασίζονται σε οξείδια παραδοσιακών μετάλλων και ημιαγωγών. Ο μαγνητικός και οπτικός χαρακτηρισμός των υλικών αυτών υπό τη μορφή της νανοδομής του λεπτού υμενίου, αποκαλύπτουν νέες ιδιότητες με εξαιρετικά μεγάλο τεχνολογικό ενδιαφέρον. Πιο συγκεκριμένα, έγινε καταρχήν ανάπτυξη πολυστρωματικών μαγνητικών υμενίων Ni/NiO, μονοστρωματικών ημιαγωγικών υμενίων

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Książki na temat "Semiconducting Quantum Materials"

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G, Snyder Paul, and United States. National Aeronautics and Space Administration., eds. Materials, structures, and devices for high-speed electronics: Final report, grant period, January 1, 1981 - December 31, 1992. National Aeronautics and Space Administration, 1992.

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G, Snyder Paul, and United States. National Aeronautics and Space Administration., eds. Materials, structures, and devices for high-speed electronics: Final report, grant period, January 1, 1981 - December 31, 1992. National Aeronautics and Space Administration, 1992.

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Panigrahi, Muktikanta, and Arpan Kumar Nayak. Polyaniline based Composite for Gas Sensors. IOR PRESS, 2021. http://dx.doi.org/10.34256/ioriip212.

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In this research work, we have demonstrated the synthesis, spectroscopic characteristics, thermal behaviour and DC conductivity of a few nanostructured composites, substituted conducting polymers (ICPs) and composites of ICPs. The physical properties of aforementioned composites are significantly changed by the doping with HCl, H2SO4, HNO3, H3PO4, or acrylic acid. The charge transport properties of these polymeric materials have been studied in detail because of their potential application in gas sensors. In the current work, varieties of conducting polymer based materials such as PANI-ES/Cloi

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Części książek na temat "Semiconducting Quantum Materials"

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Pattanayak, Dillip Kumar, Arun Kumar Padhy, Lokesh Kumar Prusty, Ranjan Kumar Bhuyna, and Samita Pattanayak. "Hidden Treasures of Semiconducting Materials for Quantum Computing." In Advances in Systems Analysis, Software Engineering, and High Performance Computing. IGI Global, 2022. http://dx.doi.org/10.4018/978-1-7998-9183-3.ch009.

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Quantum computing is based on physical materials. The choice of material is important, and semiconductor materials have become a widely trailed choice in recent years. A lot of initial research into quantum computing only manifested that it could operate at temperatures close to absolute zero. However, because semiconductors are now used in the construct of these systems, it has enabled researchers to utilize quantum computers in room temperature conditions. This is one of the major reasons why quantum computing is close to commercial realization, so the role played by semiconductors is of major importance. It is true that the implementation of semiconductors has been challenging in its own way. Many semiconducting materials can exhibit many quantum degrees of freedom, and this causes the qubits to interact with each and decode quickly. Here the authors try to project a systematic study of different semiconducting materials used for quantum computing.

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"Self-organized and quantum domain structures." In Microscopy of Semiconducting Materials. CRC Press, 2000. http://dx.doi.org/10.1201/9781482268690-8.

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"Quantum Dots: Properties and Applications." In Materials Research Foundations. Materials Research Forum LLC, 2021. http://dx.doi.org/10.21741/9781644901250-13.

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Quantum dots (QDs) are very small nanoparticles and are composed of hundreds to thousands of atoms. These semiconducting materials can be made from an element, such as silicon or germanium, or compounds such as cadmium sulphide (CdS) or cadmium selenide (CdSe). The colour of these small particles does not depend on the type of semiconducting material from which the dots are made, but rather on its diameter. Besides, ODs attract the most attention because of their unique visual properties. Therefore, these are used in all kinds of applications where precise control of coloured light is important. As these dots are of great importance in chemical, biological and medical applications, they can be designed to deliver anti-cancer drugs and direct them to specific areas of the body. Therefore, with this technique, the harmful side effects of chemical treatments can be reduced. It is possible to examine and study the properties of these nanomaterials and make sure they are analyzed using some scientific devices and techniques, the most important of which are: transmittance electron microscopy (TEM), scanning electron microscopy (SEM), atomic forces microscopy (AFM) with dielectrics, and X-ray diffraction (XRD). This chapter opens horizons towards knowing what quantum dots are and their unique properties, as well as methods of preparation and then placing our hands on the chemical, and biological applications of these dots.

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Cockayne, D. J. H., X. Z. Liao, and J. Zou. "The morphology and composition of quantum dots." In Microscopy of Semiconducting Materials 2001. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074629-17.

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Shen, H., and F. H. Pollak. "Quantum Wells." In Concise Encyclopedia of Semiconducting Materials & Related Technologies. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-08-034724-0.50093-7.

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Ernst, F., O. Kienzle, O. G. Schmidt, et al. "Ge-Si Nanostructures for Quantum-Effect Electronic Devices." In Microscopy of Semiconducting Materials 2001. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074629-35.

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Migliorato, M. A., A. G. Cullis, M. Fearn, and J. H. Jefferson. "Atomistic modelling of strain relaxation effects in quantum dots." In Microscopy of Semiconducting Materials 2001. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074629-21.

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Keast, V. J., N. Sharma, and C. J. Humphreys. "Energy-loss spectroscopy of GaN alloys and quantum wells." In Microscopy of Semiconducting Materials 2001. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074629-54.

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Zhi, D., D. W. Pashley, B. A. Joyce, and T. S. Jones. "The structure of uncapped and capped InAs/GaAs quantum dots." In Microscopy of Semiconducting Materials 2001. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074629-19.

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Leifer, K., B. Dwir, Y. Ducommun, D. Y. Oberli, and E. Kapon. "Localisation and transport in quantum wires with longitudinal bandgap variation." In Microscopy of Semiconducting Materials 2001. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074629-24.

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Streszczenia konferencji na temat "Semiconducting Quantum Materials"

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Xiulai Xu, D. A. Williams, J. R. A. Cleaver, Debao Zhou, and C. Stanley. "InAs quantum dots for quantum information processing." In 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511396.

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Fu, L., P. Lever, P. L. Gareso, et al. "Impurity-free vacancy disordering of quantum wells and quantum dots for optoelectronic/photonic integrated circuits." In 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511397.

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Lee, Kwang-Sup. "Semiconducting quantum dots with optoelectronic and photonic functions (Conference Presentation)." In Organic Photonic Materials and Devices XXI, edited by Christopher E. Tabor, François Kajzar, and Toshikuni Kaino. SPIE, 2019. http://dx.doi.org/10.1117/12.2514004.

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Tsuya, Daiju, Masaki Suzuki, Yoshinobu Aoyagi, and Koji Ishibashi. "Quantum dot transport of semiconducting single-wall carbon nanotubes." In 2004 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2004. http://dx.doi.org/10.7567/ssdm.2004.h-4-2.

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Yan, B., Z. Yang, Y. Shi, et al. "Structural characteristics of self-assembled Ge/Si quantum dot superlattices." In 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511403.

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Jarillo-Herrero, Pablo. "A Few Electron-Hole Semiconducting Carbon Nanotube Quantum Dot." In ELECTRIC PROPERTIES OF SYNTHETIC NANOSTRUCTURES: XVII International Winterschool/Euroconference on Electronic Properties of Novel Materials. AIP, 2004. http://dx.doi.org/10.1063/1.1812154.

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Gong, Q., P. Offermans, R. Noetzel, P. M. Koenrad, and J. H. Wolter. "Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy." In 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511399.

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He, J., P. Offermans, P. M. Koenrad, et al. "Structural and optical properties of columnar (In,Ga)As quantum dots on GaAs (100)." In 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511400.

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Terashita, Y., M. Okazaki, K. Kamimura, and K. Fujiwara. "Lasing wavelength of GaAs single quantum well diodes with thin AlAs carrier blocking layers." In 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511433.

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Xu, B., Z. G. Wang, Y. H. Chen, et al. "Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices." In 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511398.

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