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Artykuły w czasopismach na temat „Semiconductor opening switch”

Autor: Grafiati

Data publikacji: 7 września 2024

Data aktualizacji: 31 lipca 2025

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1

Tu, Jing, Jinsheng Luo, and Rong Yang. "Mechanism of Semiconductor Opening Switch." Japanese Journal of Applied Physics 46, no. 3A (2007): 897–902. http://dx.doi.org/10.1143/jjap.46.897.

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2

Chauchard, E. A., C. C. Kung, Chi H. Lee, and M. J. Rhee. "Repetitive semiconductor opening switch and application to short pulse generation." Laser and Particle Beams 7, no. 3 (1989): 615–26. http://dx.doi.org/10.1017/s0263034600007588.

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We describe the operation of a repetitive semiconductor opening switch in conjunction with inductive energy storage systems. Different materials and switch configurations are examined. A new method of generating square pulses of nanosecond duration is implemented. It utilizes the opening switch and a current charged transmission line.

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3

Hashimshony, D., C. Cohen, A. Zigler, and K. Papadopoulos. "Switch opening time reduction in high power photoconducting semiconductor switches." Optics Communications 124, no. 5-6 (1996): 443–47. http://dx.doi.org/10.1016/0030-4018(95)00685-0.

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4

Jiang, Weihua. "Pulsed High-Voltage Generator using Semiconductor Opening Switch." IEEJ Transactions on Fundamentals and Materials 130, no. 6 (2010): 538–42. http://dx.doi.org/10.1541/ieejfms.130.538.

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5

Schoenbach, K. H., V. K. Lakdawala, R. Germer, and S. T. Ko. "An optically controlled closing and opening semiconductor switch." Journal of Applied Physics 63, no. 7 (1988): 2460–63. http://dx.doi.org/10.1063/1.341022.

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6

Lyubutin, S., M. Pedos, A. V. Ponomarev, et al. "High efficiency nanosecond generator based on semiconductor opening switch." IEEE Transactions on Dielectrics and Electrical Insulation 18, no. 4 (2011): 1221–27. http://dx.doi.org/10.1109/tdei.2011.5976119.

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7

Ivanov, Pavel A., and Igor V. Grekhov. "Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode." Materials Science Forum 740-742 (January 2013): 865–68. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.865.

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Mesa-epitaxial 4H-SiC p+-p-no-n+-diodes were fabricated and their reverse recovery characteristics were measured in pulse regimes to be relevant to DSRD- and SOS-modes of operation [I.V. Grekhov, G.A. Mesyats, Physical basis for high-power semiconductor nanosecond opening switches, IEEE Transactions on Plasma Science 28 (2000) 1540-1544]. It has been found that after short pumping the diodes by forward current pulse (5-ns duration, 200-A/cm2 peak current density) followed by applying the reverse voltage pulse (rise time 2 ns) the diodes are able to interrupt the reverse current density of 3.5

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8

Lyubutin, S. K., S. N. Rukin, B. G. Slovikovsky, and S. N. Tsyranov. "Operation of a semiconductor opening switch at ultrahigh current densities." Semiconductors 46, no. 4 (2012): 519–27. http://dx.doi.org/10.1134/s106378261204015x.

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9

Gusev, A. I., S. K. Lyubutin, A. V. Ponomarev, S. N. Rukin, and B. G. Slovikovsky. "Semiconductor opening switch generator with a primary thyristor switch triggered in impact-ionization wave mode." Review of Scientific Instruments 89, no. 11 (2018): 114702. http://dx.doi.org/10.1063/1.5052530.

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10

NAMIHIRA, Takao, Takashi SAKUGAWA, Sunao KATSUKI, and Hidenori AKIYAMA. "Pulsed Power Generator with Inductive-Energy Storage Using Semiconductor Opening Switch." Journal of Plasma and Fusion Research 81, no. 5 (2005): 355–58. http://dx.doi.org/10.1585/jspf.81.355.

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11

Li Zhongjie, Li Yongdong, Wang Hongguang, Lin Shu, and Liu Chunliang. "Numerical simulation of semiconductor opening switch with circuit-fluid coupled model." High Power Laser and Particle Beams 22, no. 6 (2010): 1411–04. http://dx.doi.org/10.3788/hplpb20102206.1411.

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12

Ding, Zhenjie, Qingsong Hao, Long Hu, Jiancang Su, and Guozhi Liu. "All-solid-state repetitive semiconductor opening switch-based short pulse generator." Review of Scientific Instruments 80, no. 9 (2009): 093303. http://dx.doi.org/10.1063/1.3233937.

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13

Zagulov, F. Ya, V. V. Kladukhin, D. L. Kuznetsov, et al. "A high-current nanosecond electron accelerator with a semiconductor opening switch." Instruments and Experimental Techniques 43, no. 5 (2000): 647–51. http://dx.doi.org/10.1007/bf02759076.

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14

Zhu, Jianbin, Munan Lin, Haibo Li, Wenqing Zhang, Yuntao Liu, and Xin Qi. "Development of a nanosecond high voltage pulser based on Semiconductor Opening Switch." Journal of Instrumentation 18, no. 10 (2023): P10002. http://dx.doi.org/10.1088/1748-0221/18/10/p10002.

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Abstract Nanosecond pulser is widely used in beam injection and extraction. Semiconductor Opening Switch (SOS) is a type of high voltage diode with P+-P-N-N+ semiconductor structure, which has a great application prospect in pulse power technology for its notably short switching-off time, high repetition rate and large working current. The cutoff time of the SOS is dependent on the duration and amplitude of the pumping current, which may reach thousands of amperes. A two-stage magnetic compression pumping circuit without external demagnetization cicuits is proposed to meet the operational requ

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15

Gusev, A. I., M. S. Pedos, S. N. Rukin, S. P. Timoshenkov, and S. N. Tsyranov. "A 6 GW nanosecond solid-state generator based on semiconductor opening switch." Review of Scientific Instruments 86, no. 11 (2015): 114706. http://dx.doi.org/10.1063/1.4936295.

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16

Sugai, Taichi, Weihua Jiang, and Akira Tokuchi. "Influence of forward pumping current on current interruption by semiconductor opening switch." IEEE Transactions on Dielectrics and Electrical Insulation 22, no. 4 (2015): 1971–75. http://dx.doi.org/10.1109/tdei.2015.004989.

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17

Yokoo, T., K. Saiki, K. Hotta, and W. Jiang. "Repetitive Pulsed High-Voltage Generator Using Semiconductor Opening Switch for Atmospheric Discharge." IEEE Transactions on Plasma Science 36, no. 5 (2008): 2638–43. http://dx.doi.org/10.1109/tps.2008.2004368.

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18

Panchenko, Alexei N., and Victor F. Tarasenko. "Efficient gas lasers pumped by double-discharge circuits with semiconductor opening switch." Progress in Quantum Electronics 36, no. 1 (2012): 143–93. http://dx.doi.org/10.1016/j.pquantelec.2012.03.005.

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19

Patrakov, V. E., M. S. Pedos, and S. N. Rukin. "Picosecond semiconductor generator for capacitive sensors calibration." Journal of Physics: Conference Series 2064, no. 1 (2021): 012128. http://dx.doi.org/10.1088/1742-6596/2064/1/012128.

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Abstract The paper describes a semiconductor picosecond pulse generator that can be used to calibrate capacitive high voltage sensors of MV range. The generator is designed as a base unit, to which external pulse converters are connected. In the base unit, semiconductor devices – first a semiconductor opening switch (SOS) and then a semiconductor sharpener (SS) – generate an output pulse with a rise time of 220 ps and a subsequent flat-top of 2 ns in duration. The pulse amplitude is around 1 kV across 50 Ω load. An external diode sharpener generates a pulse with 120 ps rise time and 500-ps fla

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20

Wang Gang, 王刚, 苏建仓 Su Jiancang, 丁臻捷 Ding Zhenjie, et al. "Repetitive frequency pulsed generator based on semiconductor opening switch and linear transformer driver." High Power Laser and Particle Beams 26, no. 4 (2014): 45011. http://dx.doi.org/10.3788/hplpb20142604.45011.

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21

Wang Gusen, 王古森, 王洪广 Wang Hongguang, 戚玉佳 Qi Yujia, and 李永东 Li Yongdong. "Influences of key parameters on width of output pulses by semiconductor opening switch." High Power Laser and Particle Beams 26, no. 6 (2014): 63021. http://dx.doi.org/10.3788/hplpb20142606.63021.

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22

Wang, Gang, Jiancang Su, Zhenjie Ding, Xuelin Yuan, and Yafeng Pan. "A semiconductor opening switch based generator with pulse repetitive frequency of 4 MHz." Review of Scientific Instruments 84, no. 12 (2013): 125102. http://dx.doi.org/10.1063/1.4833683.

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23

Teramoto, Yusuke, Daisuke Deguchi, Igor V. Lisitsyn, Takao Namihira, Sunao Katsuki, and Hidenori Akiyama. "All-solid-state triggerless repetitive pulsed power generator utilizing a semiconductor opening switch." Review of Scientific Instruments 72, no. 12 (2001): 4464–68. http://dx.doi.org/10.1063/1.1416115.

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24

Yuan, Qi, Zichen Deng, Weidong Ding, Yanan Wang, and Jiawei Wu. "New advances in solid-state pulse generator based on magnetic switches." Review of Scientific Instruments 93, no. 5 (2022): 051501. http://dx.doi.org/10.1063/5.0079583.

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Pulsed power technology is gradually forming a development trend of civil-military integration, which puts forward more requirements for pulsed power generators. This paper takes magnetic switches (MSs) as the starting point and reviews recent advancements in pulse generators based on MSs. First, the working mechanism of the MS “rapid inductance drop after magnetic core saturation” is analyzed. Second, the basic uses of MSs are introduced with specific examples, namely, magnetic compression unit, saturated pulse transformer, and magnetic delay switches. Then, the typical topologies of pulse ge

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25

Kostyrya, Igor D., Victor M. Orlovskii, Victor F. Tarasenko, Weihua Jiang, and Tatsumi Goto. "A pulsed repetitive CO2laser pumped by a longitudinal-discharge-initiated semiconductor opening switch diode." Plasma Devices and Operations 14, no. 3 (2006): 177–84. http://dx.doi.org/10.1080/10519990600708734.

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26

Zhang, Chao, Zhicheng Shi, Xuefeng Liu, Huanhong Chen, and Ai Zhang. "Design of a High Speed Electro-optic Q-switch Circuit for Aerospace Applications." Journal of Physics: Conference Series 2617, no. 1 (2023): 012011. http://dx.doi.org/10.1088/1742-6596/2617/1/012011.

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Abstract In order to meet the requirements of high amplitude and high speed of electro-optic Q-switch voltage, a high speed electro-optic Q-switch circuit for aerospace applications is designed. According to the principle of Marx generator, the circuit uses a high speed driving chip to drive the switching transistor to conduct. The charge of the primary energy storage capacitor of the pulse transformer is quickly released, and the secondary induced voltage drives the switches of the Marx generator to open quickly and synchronously. By utilizing the fast and synchronous opening of MOSFET (Metal

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27

Kim, Hyosung. "Gate Drive Controller for Low Voltage DC Hybrid Circuit Breaker." Energies 14, no. 6 (2021): 1753. http://dx.doi.org/10.3390/en14061753.

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With the advent of direct current (DC) loads such as LED lighting, IT equipment, electric vehicles, and DC powers generated from renewable energy sources, low voltage DC (LVDC) distribution system is becoming a hot issue. One of the hurdles in the LVDC distribution system is arc flash at the contact points that occurs during the circuit is opening. Unlike alternating current, direct current has no zero points and sustains constantly. Therefore, there is a risk of electric fire due to continuous generating arcs when the load current is interrupted with an existing electrical contact type circui

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28

Bychkov, Yu I., Aleksei N. Panchenko, Viktor F. Tarasenko, A. E. Tel'minov, S. A. Yampol'skaya, and A. G. Yastremskii. "Efficient XeCl laser with a semiconductor opening switch in a pump oscillator: Theory and experiment." Quantum Electronics 37, no. 4 (2007): 319–24. http://dx.doi.org/10.1070/qe2007v037n04abeh013253.

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29

Lyubutin, S. K., S. N. Rukin, B. G. Slovikovkii, and S. N. Tsyranov. "A semiconductor opening switch-based quasi-rectangualr pulse generator operating into a low-impedance load." Instruments and Experimental Techniques 43, no. 1 (2000): 66–72. http://dx.doi.org/10.1007/bf02759001.

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30

Vasiliev, P. V., S. K. Lyubutin, A. V. Ponomarev, et al. "Operation of a semiconductor opening switch at the pumping time of a microsecond and low current density." Semiconductors 43, no. 7 (2009): 953–56. http://dx.doi.org/10.1134/s1063782609070252.

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31

Kung, C. C., E. A. Chauchard, C. H. Lee, and M. J. Rhee. "Kilovolt square pulse generation by a dual of the Blumlein line with a photoconductive semiconductor opening switch." IEEE Photonics Technology Letters 4, no. 6 (1992): 621–23. http://dx.doi.org/10.1109/68.141988.

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32

Kakuta, Takatoshi, Ippei Yagi, and Koichi Takaki. "Improvement of deoxidization efficiency of nitric monoxide by shortening pulse width of semiconductor opening switch pulse power generator." Japanese Journal of Applied Physics 54, no. 1S (2014): 01AG02. http://dx.doi.org/10.7567/jjap.54.01ag02.

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33

Kung, C. C., E. A. Chauchard, Chi H. Lee, M. J. Rhee, and L. Yan. "Observation of power gain in an inductive energy pulsed power system with an optically controlled semiconductor opening switch." Applied Physics Letters 57, no. 22 (1990): 2330–32. http://dx.doi.org/10.1063/1.103884.

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34

Sugai, Taichi, Wei Liu, Akira Tokuchi, Weihua Jiang, and Yasushi Minamitani. "Influence of a Circuit Parameter for Plasma Water Treatment by an Inductive Energy Storage Circuit Using Semiconductor Opening Switch." IEEE Transactions on Plasma Science 41, no. 4 (2013): 967–74. http://dx.doi.org/10.1109/tps.2013.2251359.

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35

Zhuang, Longyu, Kai Zhu, Junfeng Rao, and Jie Zhuang. "Solid-state Marx generator based on saturable pulse transformer and fast recovery diodes." Journal of Instrumentation 18, no. 10 (2023): P10036. http://dx.doi.org/10.1088/1748-0221/18/10/p10036.

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Abstract Solid-state compact Marx generator using saturable pulse transformer (SPT) and fast recovery diodes has been proposed. The primary circuit is switched by three MOSFETs connected in parallel. The SPT functions as a step-up transformer to increase the voltage amplitude and as a closing switch for the secondary circuit. Meanwhile, all the SPTs share the same magnetic core to achieve a compact structure and ensure good synchronization. The energy storage capacitors on the secondary sides are charged through the unsaturated SPT. When the SPT saturates, the capacitors firstly transfer a lit

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36

Zhu, Jianbin, Munan Lin, Haibo Li, Wenqing Zhang, Yuntao Liu, and Xin Qi. "Fast high voltage pulser for the southern advanced photon source." Journal of Instrumentation 19, no. 10 (2024): P10037. http://dx.doi.org/10.1088/1748-0221/19/10/p10037.

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Abstract The Southern Advanced Photon Source (SAPS) is a planned fourth-generation synchrotron radiation facility featuring a low-emittance storage ring. For the H-7BA lattice design, the dynamic aperture is significantly smaller than the physical aperture, necessitating the use of a strip-line kicker based on an on-axis injection scheme. To minimize interference from the pulser on adjacent beams, a nanosecond pulser with stringent rise and fall time requirements is essential. A prototype pulser, based on a semiconductor opening switch, was developed to meet these demands. A nonlinear transmis

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37

Komarskiy, Alexander Alexandrovich, Sergey Romanovich Korzhenevskiy, Andrey Viktorovich Ponomarev, and Nikita Alexandrovich Komarov. "Pulsed X-ray source with the pulse duration of 50 ns and the peak power of 70 MW for capturing moving objects." Journal of X-Ray Science and Technology 29, no. 4 (2021): 567–76. http://dx.doi.org/10.3233/xst-210873.

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BACKGROUND: Traditionally, X-ray systems for capturing moving objects consist of a continuous X-ray source and a detector that operates at a predetermined frame rate. OBJECTIVE: This study investigates the possibility of using pulsed X-ray source with an inductive energy storage device and a semiconductor opening switch for shooting moving objects. METHODS: The study uses a high-voltage pulse generator that has the following parameters namely, the pulse voltage amplitude up to 320 kV, the pulse current up to 240 A, the current pulse duration of about 50 ns, and the pulse repetition rate up to

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38

Hu, L., Z. Ding, Q. Hao, Y. Pan, and X. Fang. "Design of a 43 kV, 20 kHz solid-state pulse generator driven by a low-current-density-pumped semiconductor opening switch." Measurement Science and Technology 24, no. 7 (2013): 077002. http://dx.doi.org/10.1088/0957-0233/24/7/077002.

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39

Gusev, A. I., M. S. Pedos, A. V. Ponomarev, S. N. Rukin, S. P. Timoshenkov, and S. N. Tsyranov. "A 30 GW subnanosecond solid-state pulsed power system based on generator with semiconductor opening switch and gyromagnetic nonlinear transmission lines." Review of Scientific Instruments 89, no. 9 (2018): 094703. http://dx.doi.org/10.1063/1.5048111.

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40

Komarskiy, A., S. Korzhenevskiy, A. Chepusov, and O. Krasniy. "The pulsed X-ray radiation source based on a semiconductor opening switch with the focal point diameter of 0.5 mm and its application." Review of Scientific Instruments 90, no. 9 (2019): 095106. http://dx.doi.org/10.1063/1.5087222.

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41

Lin Shu, 林舒, 李永东 Li Yongdong, 王洪广 Wang Hongguang, and 刘纯亮 Liu Chunliang. "Scaled model for simulating opening process of semiconductor opening switches." High Power Laser and Particle Beams 25, no. 9 (2013): 2341–45. http://dx.doi.org/10.3788/hplpb20132509.2341.

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42

Chauchard, E. A., M. J. Rhee, and Chi H. Lee. "Optically activated semiconductors as repetitive opening switches." Applied Physics Letters 47, no. 12 (1985): 1293–95. http://dx.doi.org/10.1063/1.96309.

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43

Lee, C. H. "Optical control of semiconductor closing and opening switches." IEEE Transactions on Electron Devices 37, no. 12 (1990): 2426–38. http://dx.doi.org/10.1109/16.64515.

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44

Grekhov, I. V., and G. A. Mesyats. "Physical basis for high-power semiconductor nanosecond opening switches." IEEE Transactions on Plasma Science 28, no. 5 (2000): 1540–44. http://dx.doi.org/10.1109/27.901229.

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45

Rukin, S. N. "Pulsed power technology based on semiconductor opening switches: A review." Review of Scientific Instruments 91, no. 1 (2020): 011501. http://dx.doi.org/10.1063/1.5128297.

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46

Abbasi, A. H., K. Niayesh, and J. Shakeri. "Performance Enhancement of High Power High Repetition Rate Semiconductor Opening Switches." Acta Physica Polonica A 115, no. 6 (2009): 983–85. http://dx.doi.org/10.12693/aphyspola.115.983.

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47

Grekhov, Igor V., Pavel A. Ivanov, Dmitry V. Khristyuk, Andrey O. Konstantinov, Sergey V. Korotkov, and Tat’yana P. Samsonova. "Sub-nanosecond semiconductor opening switches based on 4H–SiC p+pon+-diodes." Solid-State Electronics 47, no. 10 (2003): 1769–74. http://dx.doi.org/10.1016/s0038-1101(03)00157-6.

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48

Darznek, S. A., G. A. Mesyats, and S. N. Rukin. "Dynamics of electron-hole plasma in semiconductor opening switches for ultradense currents." Technical Physics 42, no. 10 (1997): 1170–75. http://dx.doi.org/10.1134/1.1258796.

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49

Glazov, A. L., V. A. Kozlov, and K. L. Muratikov. "Laser thermowave diagnostics of heat transfer through bonded interfaces in multielement semiconductor opening switches." Technical Physics Letters 37, no. 12 (2011): 1149–53. http://dx.doi.org/10.1134/s1063785011120212.

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50

Darznek, S. A., S. N. Rukin, and S. N. Tsiranov. "Effect of structure doping profile on the current switching-off process in power semiconductor opening switches." Technical Physics 45, no. 4 (2000): 436–42. http://dx.doi.org/10.1134/1.1259650.

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