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Artykuły w czasopismach na temat „Si Quantum Dot”

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Data publikacji: 6 września 2023

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1

Porod, Wolfgang. "Quantum-Dot Devices and Quantum-Dot Cellular Automata." International Journal of Bifurcation and Chaos 07, no. 10 (1997): 2199–218. http://dx.doi.org/10.1142/s0218127497001606.

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We discuss novel nanoelectronic architecture paradigms based on cells composed of coupled quantum-dots. Boolean logic functions may be implemented in specific arrays of cells representing binary information, the so-called Quantum-Dot Cellular Automata (QCA). Cells may also be viewed as carrying analog information and we outline a network-theoretic description of such Quantum-Dot Nonlinear Networks (Q-CNN). In addition, we discuss possible realizations of these structures in a variety of semiconductor systems (including GaAs/AlGaAs, Si/SiGe, and Si/SiO 2), rings of metallic tunnel junctions, an

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2

Dvurechenskii, Anatolii V., and Andrei I. Yakimov. "Quantum dot Ge/Si heterostructures." Uspekhi Fizicheskih Nauk 171, no. 12 (2001): 1371. http://dx.doi.org/10.3367/ufnr.0171.200112h.1371.

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Dvurechenskii, Anatolii V., and Andrei I. Yakimov. "Quantum dot Ge/Si heterostructures." Physics-Uspekhi 44, no. 12 (2001): 1304–7. http://dx.doi.org/10.1070/pu2001v044n12abeh001057.

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4

Lambert, K., I. Moreels, D. Van Thourhout, and Z. Hens. "Quantum Dot Micropatterning on Si." Langmuir 24, no. 11 (2008): 5961–66. http://dx.doi.org/10.1021/la703664r.

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5

Dvurechenskii, Anatoly, Andrew Yakimov, Victor Kirienko, et al. "Enhanced Optical Properties of Silicon Based Quantum Dot Heterostructures." Defect and Diffusion Forum 386 (September 2018): 68–74. http://dx.doi.org/10.4028/www.scientific.net/ddf.386.68.

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New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si (100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.

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6

Gudlavalleti, R. H., B. Saman, R. Mays, et al. "Modeling of Multi-State Si and Ge Cladded Quantum Dot Gate FETs Using Verilog and ABM Simulations." International Journal of High Speed Electronics and Systems 28, no. 03n04 (2019): 1940026. http://dx.doi.org/10.1142/s0129156419400263.

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Quantum dot gate (QDG) field-effect transistors (FETs) fabricated using Si and Ge quantum dot layers, self-assembled in the gate region over the tunnel oxide, have exhibited 3- and 4-state behavior applicable for ternary and quaternary logic, respectively. This paper presents simulation of QDG-FETs comprising mixed Ge and Si quantum dot layers over tunnel oxide using an analog behavior model (ABM) and Verilog model. The simulations reproduce the experimental I-V characteristics of a fabricated mixed dot QDG-FET. GeOx-cladded Ge quantum dot layer is in interface to the tunnel oxide and is depos

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7

Kondo, Jun, Pial Mirdha, Barath Parthasarathy, et al. "Modeling and Fabrication of GeOx-Ge Cladded Quantum Dot Channel (QDC) FETs on Poly-Silicon." International Journal of High Speed Electronics and Systems 27, no. 01n02 (2018): 1840005. http://dx.doi.org/10.1142/s0129156418400050.

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Quantum dot channel (QDC) and Quantum dot gate (QDG) field effect transistors (FETs) have been fabricated on crystalline Si using cladded Si and Ge quantum dots. This paper presents fabrication and modeling of quantum dot channel field effect transistors (QDC-FETs) using cladded Ge quantum dots on poly-Si thin films grown on silicon-on-insulator (SOI) substrates. HfAlO2 high-k dielectric layers are used for the gate dielectric. QDC-FETs exhibit multi-state I-V characteristics which enable two-bit processing, and reduce FET count and power dissipation. QDC-FETs using germanium quantum dots prov

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8

Parthasarathy, Barath, Pial Mirdha, Jun Kondo, and Faquir Jain. "Dual Quantum Dot Superlattice." International Journal of High Speed Electronics and Systems 27, no. 01n02 (2018): 1840003. http://dx.doi.org/10.1142/s0129156418400037.

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In this paper, we propose a structure using four layers of quantum dots on crystalline silicon. The quantum dots site-specifically self-assembled in the p-type material due to the electrostatic attraction. This quantum dot super lattice (QDSL) structure will be constructed using a mixed layer of Germanium (Ge) and Silicon (Si) dots. Atomic Force Microscopy results will show the accurate stack height formed from individual and multi stacked layers. This is the first novel characterization of 4 layers of 2 separate self assemblies. This was also applied to a quantum dot gate field effect transis

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9

Chen, Minhan, and Wolfgang Porod. "Simulation of Quantum-Dot Structures in Si/SiO2." VLSI Design 6, no. 1-4 (1998): 335–39. http://dx.doi.org/10.1155/1998/89258.

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We present numerical simulations for the design of gated few-electron quantum dot structures in the Si/SiO2 material system. Because of the vicinity of the quantum dots to the exposed surface, we take special care in treating the boundary conditions at the oxide/vacuum interfaces. In our simulations, the confining potential is obtained from the Poisson equation with a Thomas-Fermi charge model. We find that the dot occupancy can be effectively controlled in the few-electron regime.

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10

He, Peng, Chong Wang, Jie Yang, and Yu Yang. "Advance of Ge/Si Quantum Dot Infrared Photodetector." Advanced Materials Research 873 (December 2013): 799–808. http://dx.doi.org/10.4028/www.scientific.net/amr.873.799.

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The generation of quantum dots (QDs), the advantages and disadvantages of quantum dot infrared photodetector (QDIP) are briefly reviewed. Typical techniques for fabricating ordered Ge/Si QDs, the application of Ge/Si QDIP in optical communication and thermal imaging and the structure optimization are described. Finally, the key problems for improving the properties of Ge/Si QDs and Ge/Si QDIP, future trends and prospects are discussed.

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11

Lingalugari, Murali, Evan Heller, Barath Parthasarathy, John Chandy, and Faquir Jain. "Quantum Dot Floating Gate Nonvolatile Random Access Memory Using Ge Quantum Dot Channel for Faster Erasing." International Journal of High Speed Electronics and Systems 27, no. 01n02 (2018): 1840006. http://dx.doi.org/10.1142/s0129156418400062.

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This paper presents an approach to enhance floating gate quantum dot nonvolatile random access memory (QDNVRAM) cells in terms of higher-speed and lower-voltage Erase not possible with conventional floating gate nonvolatile memories. It is achieved by directly accessing the floating gate layer with a Ge quantum dot access channel via an additional drain (D2) during the Erase and/or Write operation. Quantum mechanical simulations in GeOx-cladded Ge quantum dot layers functioning as the floating gate as well access channel to facilitate Erase and Write are presented. Experimental data on fabrica

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12

Le, Thu-Huong, Dang Thi Thanh Le, and Nguyen Van Tung. "Synthesis of Colloidal Silicon Quantum Dot from Rice Husk Ash." Journal of Chemistry 2021 (March 2, 2021): 1–9. http://dx.doi.org/10.1155/2021/6689590.

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This article describes the synthesis procedure of colloidal silicon quantum dot (Si QDs) from rice husk ash. The silicon quantum dots were capped with 1-octadecene by thermal hydrosilylation under argon gas to obtain octadecyl-Si QDs (ODE-Si QDs). The size separation of ODE-Si QDs was examined by the column chromatography method, which used silica gel (40–63 μm) as the stationary phase. Finally, we obtained two fractions of silicon quantum dot, exhibiting blue emission (B-Si QDs) with an average size of 2.5 ± 0.73 nm and red emission (R-Si QDs) with an average size of 5.1 ± 0.68 nm under a UV

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13

Lin, C. H., C. Y. Yu, C. Y. Peng, W. S. Ho, and C. W. Liu. "Broadband SiGe∕Si quantum dot infrared photodetectors." Journal of Applied Physics 101, no. 3 (2007): 033117. http://dx.doi.org/10.1063/1.2433768.

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14

Grützmacher, Detlev, Thomas Fromherz, Christian Dais, et al. "Three-Dimensional Si/Ge Quantum Dot Crystals." Nano Letters 7, no. 10 (2007): 3150–56. http://dx.doi.org/10.1021/nl0717199.

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15

Al-Douri, Y., R. Khenata, and A. H. Reshak. "Investigated optical studies of Si quantum dot." Solar Energy 85, no. 9 (2011): 2283–87. http://dx.doi.org/10.1016/j.solener.2011.06.017.

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16

Rappaport, N., E. Finkman, P. Boucaud, et al. "Photoconductivity of Ge/Si quantum dot photodetectors." Infrared Physics & Technology 44, no. 5-6 (2003): 513–16. http://dx.doi.org/10.1016/s1350-4495(03)00173-7.

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17

Shcherbyna, L., and T. Torchynska. "Si quantum dot structures and their applications." Physica E: Low-dimensional Systems and Nanostructures 51 (June 2013): 65–70. http://dx.doi.org/10.1016/j.physe.2012.09.026.

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18

Yakimov, A. I., A. V. Dvurechenskii, A. I. Nikiforov, and Yu Yu Proskuryakov. "Interlevel Ge/Si quantum dot infrared photodetector." Journal of Applied Physics 89, no. 10 (2001): 5676–81. http://dx.doi.org/10.1063/1.1346651.

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19

Vandersypen, Lieven. "(Digital Presentation) Quantum Computing in Si/Sige Quantum Dot Arrays." ECS Meeting Abstracts MA2022-02, no. 32 (2022): 1205. http://dx.doi.org/10.1149/ma2022-02321205mtgabs.

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Quantum computation has captivated the minds of many for almost two decades. For much of that time, it was seen mostly as an extremely interesting scientific problem. In the last few years, we have entered a new phase as the belief has grown that a large-scale quantum computer can actually be built. Quantum bits encoded in the spin state of individual electrons in Si/SiGe quantum dot arrays, have emerged as a highly promising direction. Recent highlights from our group include the operation of a device with six quantum bits and the demonstration of quantum operations with a fidelity above 99.5

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20

Murphy, Jessica K., Robert Hull, Devin Pyle, Hao Wang, Jennifer Gray, and Jerrold Floro. "Control of semiconductor quantum dot nanostructures: Variants of SixGe1−x/Si quantum dot molecules." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29, no. 1 (2011): 011029. http://dx.doi.org/10.1116/1.3533938.

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21

Hyldgaard, Per, Henry K. Harbury, and Wolfgang Porod. "Electrostatic Formation of Coupled Si/SiO2 Quantum Dot Systems." VLSI Design 8, no. 1-4 (1998): 555–58. http://dx.doi.org/10.1155/1998/67609.

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We present three-dimensional numerical modeling results for gated Si/SiO2 quantum dot systems in the few-electron regime. In our simulations, the electrostatic confining potential results from the Poisson equation assuming a self-consistent Thomas-Fermi charge model. We find that a very thin SiO2 top insulating layer allows an effective control with single-electron confinement in quantum dots with radius less than 10nm and investigate the detailed potential and resulting charge densities. Our three-dimensional finite-element modeling tool allows future investigations of the charge coupling in

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22

Kondo, Jun, Murali Lingalugari, Pik-Yiu Chan, Evan Heller, and Faquir Jain. "Modeling and Fabrication of Quantum Dot Channel Field Effect Transistors Incorporating Quantum Dot Gate." MRS Proceedings 1551 (2013): 149–54. http://dx.doi.org/10.1557/opl.2013.899.

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ABSTRACTQuantum dot gate (QDG) field-effect transistors (FET) have shown three-state transfer characteristics. Quantum dot channel (QDC) field-effect transistors (FET) have exhibited fourstate ID-VG characteristics. This project aims at studying the effect of incorporating cladded quantum dot layers in the gate region of QDC-FET. Four-state characteristics are explained by carrier transport in narrow energy mini-bands which are manifested in a quantum dot superlattice (QDSL) channel. QDSL is formed by an array of cladded quantum dots (such as SiOx-Si and GeOx-Ge). Multi-state FETs are needed i

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23

Kang, Ji-Hoon, Junghee Ryu, and Hoon Ryu. "Exploring the behaviors of electrode-driven Si quantum dot systems: from charge control to qubit operations." Nanoscale 13, no. 1 (2021): 332–39. http://dx.doi.org/10.1039/d0nr05070a.

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Quantum logic operations and electron spin controls in a Si double quantum dot platform is studied with a multi-scale modeling approach that can open the pathway to explore engineering details for Si-based designs of robust quantum logic gates.

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24

POROD, WOLFGANG. "QUANTUM-DOT CELLULAR AUTOMATA DEVICES AND ARCHITECTURES." International Journal of High Speed Electronics and Systems 09, no. 01 (1998): 37–63. http://dx.doi.org/10.1142/s012915649800004x.

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We discuss novel nanoelectronic architecture paradigms based on cells composed of coupled quantum-dots. These ideas of a transistor-less approach represent a radical departure from conventional technology. We utilize a strategy which exploits the physical interactions between quantum-dots arranged in suitably designed cellular arrays. Boolean logic functions may be implemented in specific arrays of cells representing binary information, the so-called Quantum-Dot Cellular Automata (QCA). Cells may also be viewed as carrying analog information and we outline a network-theoretic description of su

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25

Lei, Hui, Tong Zhou, Shuguang Wang, Yongliang Fan, and Zhenyang Zhong. "Large-area ordered Ge-Si compound quantum dot molecules on dot-patterned Si (001) substrates." Nanotechnology 25, no. 34 (2014): 345301. http://dx.doi.org/10.1088/0957-4484/25/34/345301.

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26

NENASHEV, A. V., A. V. DVURECHENSKII, A. F. ZINOVIEVA, and E. A. GOLOVINA. "ZEEMAN EFFECT FOR ELECTRONS AND HOLES IN Ge/Si QUANTUM DOTS." International Journal of Nanoscience 02, no. 06 (2003): 511–19. http://dx.doi.org/10.1142/s0219581x03001620.

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We investigate theoretically the Zeeman effect on the electron and hole states in quantum dots. In frame of tight-binding approach, we propose a method of calculating the g factor for localized states. The principal values of the g factor for the ground electron and hole states in the self-assembled Ge / Si quantum dot are calculated. We find the strong g factor anisotropy — the components gxx, gyy are one order smaller than the gzz component, gzz=15.71, gxx=1.14, and gyy=1.76. The analysis of the wave function structure shows that the g factor of hole are mainly controlled by the contribution

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27

Varsha, Mohamed Kria, Jawad El Hamdaoui, et al. "Quantum Confined Stark Effect on the Linear and Nonlinear Optical Properties of SiGe/Si Semi Oblate and Prolate Quantum Dots Grown in Si Wetting Layer." Nanomaterials 11, no. 6 (2021): 1513. http://dx.doi.org/10.3390/nano11061513.

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We have studied the parallel and perpendicular electric field effects on the system of SiGe prolate and oblate quantum dots numerically, taking into account the wetting layer and quantum dot size effects. Using the effective-mass approximation in the two bands model, we computationally calculated the extensive variation of dipole matrix (DM) elements, bandgap and non-linear optical properties, including absorption coefficients, refractive index changes, second harmonic generation and third harmonic generation as a function of the electric field, wetting layer size and the size of the quantum d

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28

Zhang, Jie-Yin, Fei Gao, and Jian-Jun Zhang. "Research progress of silicon and germanium quantum computing materials." Acta Physica Sinica 70, no. 21 (2021): 217802. http://dx.doi.org/10.7498/aps.70.20211492.

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Semiconductor quantum dot is one of the promising ways to realize solid-state quantum computing. The key is to obtain high-quality semiconductor quantum computing materials. Silicon and germanium can be isotopically purified to achieve nuclear spin-free isotopes, meeting the requirement for long decoherence time. They are also compatible with the current CMOS technology, thus making them ideal material platforms for large scale integration. This review first summarizes the important progress of semiconductor quantum-dot quantum computing in recent years, then focuses on the material progress i

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29

Zhang, Li Hong, Chong Wang, Jie Yang, Jin Tao Yao, and Yu Yang. "Coulomb Effects in the Ge/Si Single Quantum Dot." Applied Mechanics and Materials 320 (May 2013): 176–80. http://dx.doi.org/10.4028/www.scientific.net/amm.320.176.

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Using scanning probe microscopy (SPM) technique, the electronic properties of Ge/Si quantum dots (QDs) have been characterized. Our results demonstrate that a layer of a disordered structure is formed between the Ge/Si QDs and the surface of Si substrate due to the defects in QDs during the bias voltage applied. That is, a double tunneling system in which the Coulomb blocking effect can be observed is constructed during the electronic measurement for the single quantum dot (SQD).

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30

Sarkisyan, Hayk A., David B. Hayrapetyan, Lyudvig S. Petrosyan, et al. "Realization of the Kohn’s Theorem in Ge/Si Quantum Dots with Hole Gas: Theory and Experiment." Nanomaterials 9, no. 1 (2019): 56. http://dx.doi.org/10.3390/nano9010056.

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This article discusses specific quantum transitions in a few-particle hole gas, localized in a strongly oblate lens-shaped quantum dot. Based on the adiabatic method, the possibility of realizing the generalized Kohn theorem in such a system is shown. The criteria for the implementation of this theorem in a lens-shaped quantum dot, fulfilled in the experiment, is presented. An analytical expression is obtained for the frequencies of resonant absorption of far-infrared radiation by a gas of heavy holes, which depends on the geometric parameters of the quantum dot. The results of experiments on

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31

Tsai, Yi-Chia, Ming-Yi Lee, Yiming Li, and Seiji Samukawa. "Miniband formulation in Ge/Si quantum dot array." Japanese Journal of Applied Physics 55, no. 4S (2016): 04EJ14. http://dx.doi.org/10.7567/jjap.55.04ej14.

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Wan, Yating, Chao Xiang, Joel Guo, et al. "High Speed Evanescent Quantum‐Dot Lasers on Si." Laser & Photonics Reviews 15, no. 8 (2021): 2100057. http://dx.doi.org/10.1002/lpor.202100057.

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33

Haskins, J. B., A. Kinaci, and T. Çağin. "Thermal conductivity of Si–Ge quantum dot superlattices." Nanotechnology 22, no. 15 (2011): 155701. http://dx.doi.org/10.1088/0957-4484/22/15/155701.

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34

Hsu, B. C., C. H. Lin, P. S. Kuo, et al. "Novel MIS Ge–Si Quantum-Dot Infrared Photodetectors." IEEE Electron Device Letters 25, no. 8 (2004): 544–46. http://dx.doi.org/10.1109/led.2004.831969.

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Yang, Zheng, Yi Shi, Jianlin Liu, et al. "Optical properties of Ge/Si quantum dot superlattices." Materials Letters 58, no. 29 (2004): 3765–68. http://dx.doi.org/10.1016/j.matlet.2004.08.016.

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Kawashima, Yuki, Kenta Nakahara, Hiroshi Sato, et al. "Quantum dot-sensitized solar cells using Si nanoparticles." Transactions of the Materials Research Society of Japan 35, no. 3 (2010): 597–99. http://dx.doi.org/10.14723/tmrsj.35.597.

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37

Jo, M., K. Ishida, N. Yasuhara, Y. Sugawara, K. Kawamoto, and S. Fukatsu. "A Si-based quantum-dot light-emitting diode." Applied Physics Letters 86, no. 10 (2005): 103509. http://dx.doi.org/10.1063/1.1882757.

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CHAN, M. Y., and P. S. LEE. "FABRICATION OF SILICON NANOCRYSTALS AND ITS ROOM TEMPERATURE LUMINESCENCE EFFECTS." International Journal of Nanoscience 05, no. 04n05 (2006): 565–70. http://dx.doi.org/10.1142/s0219581x06004802.

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Silicon ( Si ) nanocrystals have been considered a good candidate for flash memory device and nanophotonic applications. The fabrication of nanocrystal memory is to form uniform, small size and high density quantum dots. In this study, nanometer-scale silicon quantum dots have been fabricated on ultrathin silicon oxide layer using amorphous silicon (a- Si ) deposition followed by various annealing treatments. The a- Si layers were crystallized using furnace annealing, laser annealing and rapid thermal annealing (RTA). After annealing to form nanometer-sized crystallites, silicon wet etch was c

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39

Fissel, Andreas. "Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC." Materials Science Forum 483-485 (May 2005): 163–68. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.163.

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The different aspects of molecular beam epitaxy (MBE) for producing two-dimensional (Quantum well), one-dimensional (Quantum wire and rod), and zero-dimensional (Quantum dot) structures based on SiC for functional applications are discussed. Development and implementation of a suitable MBE growth procedure for fabrication of heteropolytypic layer sequences are demonstrated in context with thermodynamic considerations. Furthermore, the growth of onedimensional structures based on cubic wires and nanorod arrays, also grown on Si(111), is shown. Moreover, the perspectives of quantum dot structure

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40

Hu, Rui-Zi, Rong-Long Ma, Ming Ni, et al. "Flopping-mode spin qubit in a Si-MOS quantum dot." Applied Physics Letters 122, no. 13 (2023): 134002. http://dx.doi.org/10.1063/5.0137259.

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Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used in recent years. By delocalizing an electron across a double quantum dots charge state, “flopping-mode” EDSR has been realized in Si/SiGe QDs. Here, we demonstrate a flopping-mode spin qubit in a Si-MOS QD via Elzerman single-shot readout. When changing the detuning with a fixed drive power, we achieve s-shape spin resonance frequencies, an order of magnitude

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41

Ji, Yang, Yingying Zhai, Huafeng Yang, et al. "Improved device performances based on Si quantum dot/Si nanowire hetero-structures by inserting an Al2O3 thin layer." Nanoscale 9, no. 41 (2017): 16038–45. http://dx.doi.org/10.1039/c7nr05694j.

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Wang, I.-Hsiang, Po-Yu Hong, Kang-Ping Peng, Horng-Chih Lin, Thomas George, and Pei-Wen Li. "Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices." Nanomaterials 11, no. 10 (2021): 2743. http://dx.doi.org/10.3390/nano11102743.

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Semiconductor-based quantum registers require scalable quantum-dots (QDs) to be accurately located in close proximity to and independently addressable by external electrodes. Si-based QD qubits have been realized in various lithographically-defined Si/SiGe heterostructures and validated only for milli-Kelvin temperature operation. QD qubits have recently been explored in germanium (Ge) materials systems that are envisaged to operate at higher temperatures, relax lithographic-fabrication requirements, and scale up to large quantum systems. We report the unique scalability and tunability of Ge s

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Jain, F., R. H. Gudlavalleti, R. Mays, B. Saman, J. Chandy, and E. Heller. "Modeling of Quantum Dot Channel (QDC) Si FETs at Sub-Kelvin for Multi-State Logic." International Journal of High Speed Electronics and Systems 29, no. 01n04 (2020): 2040017. http://dx.doi.org/10.1142/s0129156420400170.

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Multi-state room temperature operation of SiOx-cladded Si quantum dots (QD) and GeOx-cladded Ge quantum dot channel (QDC) field-effect transistors (FETs) and spatial wavefunction switched (SWS)-FETs have been experimentally demonstrated. This paper presents simulation of cladded Si and Ge quantum dot channel (QDC) field-effect transistors at 4.2°K and milli-Kelvin temperatures. An array of thin oxide barrier/cladding (∼1nm) on quantum dots forms a quantum dot superlattice (QDSL). A gradual channel approximation model using potential and inversion layer charge density nQM, obtained by the self-

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Hu, Rui-Zi, Rong-Long Ma, Ming Ni, et al. "An Operation Guide of Si-MOS Quantum Dots for Spin Qubits." Nanomaterials 11, no. 10 (2021): 2486. http://dx.doi.org/10.3390/nano11102486.

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In the last 20 years, silicon quantum dots have received considerable attention from academic and industrial communities for research on readout, manipulation, storage, near-neighbor and long-range coupling of spin qubits. In this paper, we introduce how to realize a single spin qubit from Si-MOS quantum dots. First, we introduce the structure of a typical Si-MOS quantum dot and the experimental setup. Then, we show the basic properties of the quantum dot, including charge stability diagram, orbital state, valley state, lever arm, electron temperature, tunneling rate and spin lifetime. After t

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Hsieh, You-Da, Ming-Way Lee, and Gou-Jen Wang. "Sb2S3Quantum-Dot Sensitized Solar Cells with Silicon Nanowire Photoelectrode." International Journal of Photoenergy 2015 (2015): 1–10. http://dx.doi.org/10.1155/2015/213858.

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We propose a novel quantum-dot sensitized solar cell (QDSSC) structure that employs a quantum dot/semiconductor silicon (QD/Si) coaxial nanorod array to replace the conventional dye/TiO2/TCO photoelectrode. We replaced the backlight input mode with top-side illumination and used a quantum dot to replace dye as the light-absorbing material. Photon-excited photoelectrons can be effectively transported to each silicon nanorod and conveyed to the counter electrode. We use two-stage metal-assisted etching (MAE) to fabricate the micro-nano hybrid structure on a silicon substrate. We then use the che

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Li, Jun. "High-Performance Monolithic Integration of III-V QD Lasers on Si Substrates." Highlights in Science, Engineering and Technology 55 (July 9, 2023): 23–28. http://dx.doi.org/10.54097/hset.v55i.9912.

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With the development of digital processes, the speed and efficiency of information exchange has increased to a great extent. Silicon-based photonics allows for large-scale photonic integration through CMOS manufacturing processes, the advantages of which lie in the low cost, low energy consumption and high quality of such processes. Currently, silicon-based monolithic integrated quantum dot lasers have achieved lifetimes comparable to those of heterogeneous integrated lasers and are even available for commercial applications. The silicon photonic platform also offers low-loss passive devices,

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Софронов, А. Н., Р. М. Балагула, Д. А. Фирсов та ін. "Поглощение излучения дальнего инфракрасного диапазона квантовыми точками Ge/Si". Физика и техника полупроводников 52, № 1 (2018): 63. http://dx.doi.org/10.21883/ftp.2018.01.45320.8655.

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AbstractThe experimental and theoretical results of studies of optical absorption in doped Ge/Si quantumdot structures in the far-infrared region, corresponding to the energies of transitions of holes from the ground state to the lowest excited size-quantization state, are reported. An analytical theory of the size quantization of holes in a lens-shaped quantum dot is developed in the context of the adiabatic approximation with consideration for pair Coulomb interaction. It is shown that the interaction has no effect on the frequencies of lower interlevel resonances. This fact is representativ

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Humayun, M. A., M. A. Rashid, F. Malek, et al. "Enhancement of Intrinsic Carrier Concentration in the Active Layer of Solar Cell Using Indium Nitride Quantum Dot." Applied Mechanics and Materials 793 (September 2015): 435–39. http://dx.doi.org/10.4028/www.scientific.net/amm.793.435.

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This paper presents the improvement of intrinsic carrier concentrations in the active layer of solar cell structure using Indium Nitride quantum dot as the active layer material. We have analyzed effective density of states in conduction band and valance band of the solar cell numerically using Si, Ge and InN quantum dot in the active layer of the solar cell structure in order to improve the intrinsic carrier concentration within the active layer of the solar cell. Then obtained numerical results were compared. From the comparison results it has been revealed that the application of InN quantu

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Shcherbyna, Lyudmula V., and Tetyana V. Torchynska. "Si Quantum Dot Structures and Some Aspects of Applications." MRS Proceedings 1534 (2013): A5—A12. http://dx.doi.org/10.1557/opl.2013.291.

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Pachinger, D., H. Groiss, M. Teuchtmann, G. Hesser, and F. Schäffler. "Surfactant-mediated Si quantum dot formation on Ge(001)." Applied Physics Letters 98, no. 22 (2011): 223104. http://dx.doi.org/10.1063/1.3595486.

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