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Gotowe bibliografie tematyczne / Silicon nanocrystals

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Gotowa bibliografia na temat „Silicon nanocrystals”

Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 25 lipca 2025

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Artykuły w czasopismach na temat "Silicon nanocrystals"

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Natrayan, L., P. V. Arul Kumar, S. Kaliappan, et al. "Analysis of Incorporation of Ion-Bombarded Nickel Ions with Silicon Nanocrystals for Microphotonic Devices." Journal of Nanomaterials 2022 (August 16, 2022): 1–7. http://dx.doi.org/10.1155/2022/5438084.

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Nanotechnology is playing a greater role in biomedical engineering. Microphotonic technology is on another side, having faster growth with more requirements. The nanocrystals are a part of nanotechnology which uses silicon for manufacturing. These silicon nanocrystals have the optical property mostly used in microphotonic devices. Silicon nanocrystals are of biocompatibility with less toxicity. Therefore, the advancement in the silicon nanocrystal helps develop more microphotonic devices for biological purposes. One critical factor of silicon nanocrystal is the surface defects or surface imper

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Gert, Anton V., Alexey V. Belolipetskii, and Ivan D. Avdeev. "Density of electronic states in silicon nanocrystals embedded in a SiO₂ matrix and passivated by hydrogen." Journal of Optical Technology 91, no. 6 (2024): 383. http://dx.doi.org/10.1364/jot.91.000383.

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Subject of study. This study is devoted to the optical transitions and density of electron and hole states in silicon nanocrystals embedded in a SiO2 dielectric matrix and silicon nanocrystals passivated by hydrogen. Aim of study. The aim is to calculate the probability of optical transitions, density of electron and hole states, and absorption cross-section in silicon nanocrystals surrounded by different environments. Another goal is to adapt the tight-binding method for correct passivation of dangling bonds of silicon. Method. The calculations are performed using the variant of the tight-bin

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Ferraioli, L., M. Wang, G. Pucker, et al. "Photoluminescence of Silicon Nanocrystals in Silicon Oxide." Journal of Nanomaterials 2007 (2007): 1–5. http://dx.doi.org/10.1155/2007/43491.

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Recent results on the photoluminescence properties of silicon nanocrystals embedded in silicon oxide are reviewed and discussed. The attention is focused on Si nanocrystals produced by high-temperature annealing of silicon rich oxide layers deposited by plasma-enhanced chemical vapor deposition. The influence of deposition parameters and layer thickness is analyzed in detail. The nanocrystal size can be roughly controlled by means of Si content and annealing temperature and time. Unfortunately, a technique for independently fine tuning the emission efficiency and the size is still lacking; thu

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Shen, Hao, Huabao Shang, Yuhan Gao, Deren Yang, and Dongsheng Li. "Efficient Sensitized Photoluminescence from Erbium Chloride Silicate via Interparticle Energy Transfer." Materials 15, no. 3 (2022): 1093. http://dx.doi.org/10.3390/ma15031093.

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In this study, we prepare Erbium compound nanocrystals and Si nanocrystal (Si NC) co-embedded silica film by the sol-gel method. Dual phases of Si and Er chloride silicate (ECS) nanocrystals were coprecipitated within amorphous silica. Effective sensitized emission of Er chloride silicate nanocrystals was realized via interparticle energy transfer between silicon nanocrystal and Er chloride silicate nanocrystals. The influence of density and the distribution of sensitizers and Er compounds on interparticle energy transfer efficiency was discussed. The interparticle energy transfer between the

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Zatryb, G., A. Podhorodecki, J. Misiewicz, J. Wojcik, and P. Mascher. "Size-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVD." Journal of Nanotechnology 2009 (2009): 1–5. http://dx.doi.org/10.1155/2009/769142.

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Silicon nanocrystals (Si-nc) embedded in a silicon-rich silicon oxide matrix codoped withEr3+ions have been fabricated by electron-cyclotron plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been obtained within a broad pump wavelength range. The influence of different nanocrystal sizes on the excitation transfer from the Si-nc toEr3+ions is discussed.

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Komarov, Fadey, Altynay Togambayeva, Ludmila Vlasukova, et al. "Ion-Beam Synthesis of InSb Nanocrystals in Si Matrix." Advanced Materials Research 679 (April 2013): 9–13. http://dx.doi.org/10.4028/www.scientific.net/amr.679.9.

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The results of structural and optical investigation of crystalline Si with embedded InSb nanocrystals are reported. These nanocrystals were synthesized in silicon matrix by means of high-fluence “hot” implantation of Sb and In ions followed by thermal treatment. TEM gives an evidence of nanocrystal formation in implanted and annealed samples as well as an existence of microtwins and dislocation-type defects and substantial residual mechanical strains. We have identified nanocrystals as InSb from RS data. Mechanical strains in “silicon – InSb nanocrystals” system have been evaluated, too.

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Li, Zhaohan, Zachary L. Robinson, Paolo Elvati, Angela Violi, and Uwe R. Kortshagen. "Distance-dependent resonance energy transfer in alkyl-terminated Si nanocrystal solids." Journal of Chemical Physics 156, no. 12 (2022): 124705. http://dx.doi.org/10.1063/5.0079571.

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Understanding and controlling the energy transfer between silicon nanocrystals is of significant importance for the design of efficient optoelectronic devices. However, previous studies on silicon nanocrystal energy transfer were limited because of the strict requirements to precisely control the inter-dot distance and to perform all measurements in air-free environments to preclude the effect of ambient oxygen. Here, we systematically investigate the distance-dependent resonance energy transfer in alkyl-terminated silicon nanocrystals for the first time. Silicon nanocrystal solids with inter-

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YıImaz, D. E., C. Bulutay, and T. Çagın. "Atomistic Structure Simulation of Silicon Nanocrystals Driven with Suboxide Penalty Energies." Journal of Nanoscience and Nanotechnology 8, no. 2 (2008): 635–39. http://dx.doi.org/10.1166/jnn.2008.a117.

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The structural control of silicon nanocrystals embedded in amorphous oxide is currently an important technological problem. In this work, an approach is presented to simulate the structural behavior of silicon nanocrystals embedded in amorphous oxide matrix based on simple valence force fields as described by Keating-type potentials. After generating an amorphous silicon-rich-oxide, its evolution towards an embedded nanocrystal is driven by the oxygen diffusion process implemented in the form of a Metropolis algorithm based on the suboxide penalty energies. However, it is observed that such an

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Efremov, M. D., Vladimir A. Volodin, D. V. Marin, et al. "Blue Photoluminescence from Quantum Size Silicon Nanopowder." Solid State Phenomena 108-109 (December 2005): 65–70. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.65.

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Silicon nanopowders were produced using electron-beam-induced evaporation of bulk silicon ingots in various gas atmosphere. Optical properties of the nanopowders were studied with the use of photoluminescence and Raman spectroscopy techniques. Photoluminescence peaks in the visible region of the spectrum have been detected at room temperature in silicon nanopowders, produced in argon gas atmosphere. Strong short-wavelength shift of the photoluminescence peaks can be result of quantum confinement effect for electrons and holes in small silicon nanocrystals (down to 2 nm in diameter). The size o

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Zhigunov, D. M., A. A. Popov, Yu M. Chesnokov, et al. "Near-IR Emitting Si Nanocrystals Fabricated by Thermal Annealing of SiNx/Si3N4 Multilayers." Applied Sciences 9, no. 22 (2019): 4725. http://dx.doi.org/10.3390/app9224725.

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Silicon nanocrystals in silicon nitride matrix are fabricated by thermal annealing of SiNx/Si3N4 multilayered thin films, and characterized by transmission electron microscopy, X-ray reflectivity and diffraction analysis, photoluminescence and X-ray photoelectron spectroscopy techniques. Si nanocrystals with a mean size of about 4 nm are obtained, and their properties are studied as a function of SiNx layer thickness (1.6–2 nm) and annealing temperature (900–1250 °C). The effect of coalescence of adjacent nanocrystals throughout the Si3N4 barrier layers is observed, which results in formation

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Rozprawy doktorskie na temat "Silicon nanocrystals"

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Walters, Robert Joseph Atwater Harry Albert. "Silicon nanocrystals for silicon photonics /." Diss., Pasadena, Calif. : California Institute of Technology, 2007. http://resolver.caltech.edu/CaltechETD:etd-06042007-160130.

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Choi, Jonghoon. "Silicon nanocrystals biocompatible fluorescent nanolabel /." College Park, Md.: University of Maryland, 2008. http://hdl.handle.net/1903/8806.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2008.<br>Thesis research directed by: Dept. of Chemical and Biomolecular Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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Sgrignuoli, Fabrizio. "Silicon nanocrystals downshifting for photovoltaic applications." Doctoral thesis, Università degli studi di Trento, 2013. https://hdl.handle.net/11572/368025.

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In conventional silicon solar cell, the collection probability of light generated carries shows a drop in the high energy range 280-400nm. One of the methods to reduce this loss, is to implement nanometre sized semiconductors on top of a solar cell where high energy photons are absorbed and low energy photons are re-emitted. This effect, called luminescence down-shifter (LDS), modifies the incident solar spectrum producing an enhancement of the energy conversion efficiency of a cell. We investigate this innovative effect using silicon nanoparticles dispersed in a silicon dioxide matrix as acti

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Sgrignuoli, Fabrizio. "Silicon nanocrystals downshifting for photovoltaic applications." Doctoral thesis, University of Trento, 2013. http://eprints-phd.biblio.unitn.it/944/1/Assemblaggio.pdf.

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In conventional silicon solar cell, the collection probability of light generated carries shows a drop in the high energy range 280-400nm. One of the methods to reduce this loss, is to implement nanometre sized semiconductors on top of a solar cell where high energy photons are absorbed and low energy photons are re-emitted. This effect, called luminescence down-shifter (LDS), modifies the incident solar spectrum producing an enhancement of the energy conversion efficiency of a cell. We investigate this innovative effect using silicon nanoparticles dispersed in a silicon dioxide matrix as act

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Deng, Xin, and 鄧欣. "Positron studies of silicon and germanium nanocrystals embedded in silicon dioxide." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B41508749.

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Deng, Xin. "Positron studies of silicon and germanium nanocrystals embedded in silicon dioxide." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B41508749.

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Schmidt, Jan-Uwe. "Synthesis of silicon nanocrystal memories by sputter deposition." Forschungszentrum Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-28765.

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Aim of this work was, to investigate the preparation of Si NC memories by sputter deposition. The milestones are as follows: - Review of relevant literature. - Development of processes for an ultrathin tunnel-oxide and high quality sputtered SiO2 for use as control-oxide. - Evaluation of methods for the preparation of an oxygen-deficient silicon oxide inter-layer (the precursor of the Si NC layer). - Characterization of deposited films. - Establishment of techniques capable of probing the phase separation of SiOx and the formation of Si NC. - Establishment of annealing conditions compatible wi

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Schmidt, Jan-Uwe. "Synthesis of silicon nanocrystal memories by sputter deposition." Forschungszentrum Rossendorf, 2005. https://hzdr.qucosa.de/id/qucosa%3A21703.

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Aim of this work was, to investigate the preparation of Si NC memories by sputter deposition. The milestones are as follows: - Review of relevant literature. - Development of processes for an ultrathin tunnel-oxide and high quality sputtered SiO2 for use as control-oxide. - Evaluation of methods for the preparation of an oxygen-deficient silicon oxide inter-layer (the precursor of the Si NC layer). - Characterization of deposited films. - Establishment of techniques capable of probing the phase separation of SiOx and the formation of Si NC. - Establishment of annealing conditions compatible wi

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Ondič, Lukáš. "Silicon nanocrystals, photonic structures and optical gain." Thesis, Strasbourg, 2014. http://www.theses.fr/2014STRAE004/document.

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Les nanocristaux de Silicium (SiNCs) de taille inférieure à 5 nm sont des matériaux qui présentent une intense photoluminescence (PL) et capables d’amplification optique. Cette dernière propriété est un pré-requis à l’obtention d’émission stimulée sous pompage optique. Atteindre l’émission stimulé (et l’effet laser) à partir de nanostructures basées sur Si est d’un intérêt particulier dans le domaine de la photonique à base de silicium. Le but de ce travail était (i) d’étudier les propriétés optiques fondamentales de SiNCs, (ii) de concevoir et de réaliser un cristal photonique présentant une

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Brown, Samuel Lynn. "Silicon Nanocrystals| Optical Properties and Self-assembly." Thesis, North Dakota State University, 2018. http://pqdtopen.proquest.com/#viewpdf?dispub=10790537.

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<p> Silicon nanocrystal’s (SiNCs) size dependent optical properties and nontoxic nature portend potential applications across a broad range of industries. With any of these applications, a thorough understanding of SiNC photophysics is desirable to tune their optical properties while optimizing quantum yield. However, a detailed understanding of the photoluminescence (PL) from SiNCs is convoluted by the complexity of the decay mechanisms, including a stretched-exponential relaxation and the presence of both nanosecond and microsecond decays.</p><p> In this dissertation, a brief history

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Książki na temat "Silicon nanocrystals"

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Pavesi, Lorenzo, and Rasit Turan. Silicon nanocrystals: Fundamentals, synthesis and applications. Wiley-VCH, 2010.

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Koshida, Nobuyoshi, ed. Device Applications of Silicon Nanocrystals and Nanostructures. Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-78689-6.

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Nobuyoshi, Koshida, and SpringerLink (Online service), eds. Device Applications of Silicon Nanocrystals and Nanostructures. Springer US, 2009.

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Pavesi, Lorenzo, and Rasit Turan, eds. Silicon Nanocrystals. Wiley, 2010. http://dx.doi.org/10.1002/9783527629954.

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Silicon Nanocrystals: Fundamentals, Synthesis and Applications. Wiley-VCH Verlag GmbH, 2010.

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Koshida, Nobuyoshi. Device Applications of Silicon Nanocrystals and Nanostructures. Springer, 2016.

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Pizzini, Sergio, and Gudrun Kissinger. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals. Taylor & Francis Group, 2014.

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Pizzini, Sergio, and Gudrun Kissinger. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals. Taylor & Francis Group, 2014.

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Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals. Taylor & Francis Group, 2014.

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Nathan, Arokia, Qi Wang, Andrew Flewitt, Jack Hou, and Shuichi Uchikoga. Amorphous and Polycrystalline Thin Film Silicon Science and Technology - 2009. University of Cambridge ESOL Examinations, 2014.

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Części książek na temat "Silicon nanocrystals"

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Pavesi, Lorenzo, and Rasit Turan. "Introduction." In Silicon Nanocrystals. Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch1.

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Iacona, Fabio, Giorgia Franzò, Alessia Irrera, Simona Boninelli, and Francesco Priolo. "Structural and Optical Properties of Silicon Nanocrystals Synthesized." In Silicon Nanocrystals. Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch10.

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Gourbilleau, Fabrice, Celine Ternon, Christian Dufour, Xavier Portier, and Richard Rizk. "Formation of Si-nc by Reactive Magnetron Sputtering." In Silicon Nanocrystals. Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch11.

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Karakuscu, Aylin, and Gian Domenico Soraru. "Si and SiC Nanocrystals by Pyrolysis of Sol-Gel-Derived Precursors." In Silicon Nanocrystals. Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch12.

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Mangolini, Lorenzo, and Uwe Kortshagen. "Nonthermal Plasma Synthesis of Silicon Nanocrystals." In Silicon Nanocrystals. Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch13.

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Gelloz, Bernard. "Silicon Nanocrystals in Porous Silicon and Applications." In Silicon Nanocrystals. Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch14.

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Oda, Shunri, and Shaoyun Huang. "Silicon Nanocrystal Flash Memory." In Silicon Nanocrystals. Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch15.

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Anopchenko, Aleksei, Nicola Daldosso, Romain Guider, et al. "Photonics Application of Silicon Nanocrystals." In Silicon Nanocrystals. Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch16.

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Roschuk, Tyler, Jing Li, Jacek Wojcik, Peter Mascher, and Iain D. Calder. "Lighting Applications of Rare Earth-Doped Silicon Oxides." In Silicon Nanocrystals. Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch17.

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Borsella, Elisabetta, Mauro Falconieri, Nathalie Herlin, et al. "Biomedical and Sensor Applications of Silicon Nanoparticles." In Silicon Nanocrystals. Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch18.

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Streszczenia konferencji na temat "Silicon nanocrystals"

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Amans, D., S. Callard, A. Gagnaire, Jacques Joseph, G. Ledoux, and Friedrich Huisken. "Silicon nanocrystals microcavity." In International Symposium on Optical Science and Technology, edited by Zeno Gaburro. SPIE, 2002. http://dx.doi.org/10.1117/12.452318.

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Shcheglov, K. V., C. M. Yang, and H. A. Atwater. "Photoluminescence and Electroluminescence of Ge-Implanted Si/SiO2/Si Structures." In Microphysics of Surfaces: Nanoscale Processing. Optica Publishing Group, 1995. http://dx.doi.org/10.1364/msnp.1995.msab3.

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Although it was observation of efficient photoluminescence [PL] from porous silicon that prompted numerous investigations into the optoelectronic properties of group IV semiconductor nanocrystals, there is interest in other related materials which are more robust in various chemical and thermal ambients and which can be easily incorporated into standard silicon VLSI processing. A promising approach that meets the above requisites is synthesis of semiconductor nanocrystals in an SiO2 matrix accomplished by various techniques. In this letter we report on the fabrication of a Ge nanocrystal-based

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Warner, Jamie H., and Richard D. Tilley. "Photonics of silicon nanocrystals." In Microelectronics, MEMS, and Nanotechnology, edited by Derek Abbott, Yuri S. Kivshar, Halina H. Rubinsztein-Dunlop, and Shanhui Fan. SPIE, 2005. http://dx.doi.org/10.1117/12.639524.

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Pi, Xiaodong, Zachary Holman, and Uwe Kortshagen. "Silicon and Germanium Nanocrystal Inks for Low-Cost Solar Cells." In ASME 2010 4th International Conference on Energy Sustainability. ASMEDC, 2010. http://dx.doi.org/10.1115/es2010-90445.

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Silicon is the most widely used material in the microelectronics and photovoltaics industry. Currently it is used in one of two forms: as wafers of single- or polycrystalline material or as CVD deposited thin film material. While crystalline silicon solar cells achieve high efficiencies, the silicon wafer contributes significantly to the module cost. Thin film silicon solar cells can be produced at much lower cost, but they also feature lower efficiencies. In this presentation, we discuss an alternate route to forming silicon (Si) or germanium (Ge) thin films from solution on flexible substrat

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Pavesi, Lorenzo, Luca Dal Negro, Massimo Cazzanelli, et al. "Optical gain in silicon nanocrystals." In Symposium on Integrated Optics, edited by David J. Robbins, John A. Trezza, and Ghassan E. Jabbour. SPIE, 2001. http://dx.doi.org/10.1117/12.426932.

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Fujioka, Kouki, Akiyoshi Hoshino, Noriyoshi Manabe, Yasuhiro Futamura, Richard Tilley, and Kenji Yamamoto. "Silicon nanocrystals as handy biomarkers." In Biomedical Optics (BiOS) 2007, edited by Marek Osinski, Thomas M. Jovin, and Kenji Yamamoto. SPIE, 2007. http://dx.doi.org/10.1117/12.699772.

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Löper, P., A. Witzky, A. Hartel, et al. "Photovoltaic properties of silicon nanocrystals in silicon carbide." In SPIE OPTO, edited by Alexandre Freundlich and Jean-Francois F. Guillemoles. SPIE, 2012. http://dx.doi.org/10.1117/12.906669.

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Anderson, Curtis, Lin Cui, and Uwe Kortshagen. "Bubbly Silicon: A New Mechanism for Solid Phase Crystallization of Amorphous Silicon." In ASME 2009 3rd International Conference on Energy Sustainability collocated with the Heat Transfer and InterPACK09 Conferences. ASMEDC, 2009. http://dx.doi.org/10.1115/es2009-90320.

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This paper describes the rapid formation of polycrystalline silicon films through seeding with silicon nanocrystals. The incorporation of seed crystals into amorphous silicon films helps to eliminate the crystallization incubation time observed in non-seeded amorphous silicon films. Furthermore, the formation of several tens of nanometer in diameter voids is observed when cubic silicon nanocrystals with around 30 nm in size are embedded in the amorphous films. These voids move through the amorphous film with high velocity, pulling behind them a crystallized “tail.” This mechanism leads to rapi

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Lacombe, Alexandre, Félix Beaudoin, François Martin, and Guy G. Ross. "Electro-optical properties of silicon nanocrystals." In Photonics North 2009, edited by Réal Vallée. SPIE, 2009. http://dx.doi.org/10.1117/12.836999.

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Choi, Jonghoon, Qin Zhang, Victoria M. Hitchins, Nam Sun Wang, and Vytas Reipa. "Cytotoxicity of the photoluminescent silicon nanocrystals." In NanoScience + Engineering, edited by Elizabeth A. Dobisz and Louay A. Eldada. SPIE, 2007. http://dx.doi.org/10.1117/12.734222.

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Raporty organizacyjne na temat "Silicon nanocrystals"

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Yu, J. Silicon Nanocrystal Laser. Office of Scientific and Technical Information (OSTI), 2005. http://dx.doi.org/10.2172/15015892.

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BATH UNIV (UNITED KINGDOM) DEPT OF PHYSICS. Singlet Oxygen Generation Mediated By Silicon Nanocrystal Assemblies. Defense Technical Information Center, 2011. http://dx.doi.org/10.21236/ada541769.

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