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Artykuły w czasopismach na temat „Silicon nitride”

Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 25 lipca 2025

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1

Yusrini, Marita, and Yaacob Iskandar Idris. "Dispersion of Strengthening Particles on the Nickel-Iron-Silicon Nitride Nanocomposite Coating." Advanced Materials Research 647 (January 2013): 705–10. http://dx.doi.org/10.4028/www.scientific.net/amr.647.705.

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Nickel-iron-silicon nitride nanocomposite coatings were prepared by electrodeposition technique. The deposition was performed at current density of 11.5 A dm-2. Nano-size silicon nitride was mixed in the electrolyte bath as dispersed phase. The effects of silicon nitride nanoparticulates in the nickel-iron nanocomposite coating were investigated in relation to the concentration of silicon nitride in the plating bath. X-ray diffraction (XRD) analysis showed that the deposited nickel iron alloy coating has face-centered cubic structure (FCC). However, a mixture of body-centered cubic (BCC) and f

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2

Yang, S., R. F. Gibson, G. M. Crosbie, and R. L. Allor. "Thermal Cycling Effects on Dynamic Mechanical Properties and Crystallographic Structures of Silicon Nitride-Based Structural Ceramics." Journal of Engineering for Gas Turbines and Power 119, no. 2 (1997): 279–84. http://dx.doi.org/10.1115/1.2815571.

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Thermal cycling effects on dynamic mechanical properties of hot pressed silicon nitride (HPSN) based structural ceramics were investigated in a simulated thermal cycling environment from room temperature up to 1100°C. Two monolithic silicon nitrides and two silicon nitride composites reinforced with silicon carbide whiskers were studied in such an environment. Experiments show that the dynamic mechanical properties of the tested materials are influenced by thermal cycle. The materials stiffened slightly while damping capacity decreased slightly during each thermal cycle. X-ray diffraction (XRD

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3

Sung, Rak Joo, Seung Ho Kim, Takafumi Kusunose, Tadachika Nakayama, Tohru Sekino, and Koichi Niihara. "Mechanical and Wear Properties of Silicon Nitride Added with AlN." Materials Science Forum 486-487 (June 2005): 209–12. http://dx.doi.org/10.4028/www.scientific.net/msf.486-487.209.

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Silicon nitride with various amount of AlN as a sintering aid was sintered by a hot press method. Densified silicon nitrides were obtained, and it was found that the mechanical and wear properties were dependent on the contents of AlN. The effect of a/b phase on the mechanical and wear properties of silicon nitride was investigated. The properties were changed depending on the amount of a/b phase. In the brittle materials, tribological behaviors were dependent on the microstructure as well as hardness and fracture toughness. We focus on the relationship between the microstructure and mechanica

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4

Hadfield, Mark, Wei Wang, and Andrew Wereszczak. "Mechanical Properties of Silicon Nitride Using RUS & C-Sphere Methodology." Advances in Science and Technology 64 (October 2010): 71–75. http://dx.doi.org/10.4028/www.scientific.net/ast.64.71.

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Silicon nitride is a type of engineering ceramic which has been used in ball bearing and other rolling contact applications owing to its good fatigue life, high temperature strength and tribological performance. In this paper, the mechanical properties of Hot Isostatically Pressed (HIPed) and Sintered and Reaction Bonded Silion Nitride (SRBSN) have been studied. The elastic modulus and poisson’s ratio of three types of commerical grade HIPed silicon nitride, and ground SRBSN with three surface condidtions were measured using a Resonance Ultrasound Spectroscopy (RUS). The RUS measurement reveal

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5

Gritsenko, Vladimir A., Alexandr V. Shaposhnikov, W. M. Kwok, Hei Wong, and Georgii M. Jidomirov. "Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces." Thin Solid Films 437, no. 1-2 (2003): 135–39. http://dx.doi.org/10.1016/s0040-6090(03)00601-1.

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6

Park, Dong-Soo, and Chang-Won Kim. "Anisotropy of Silicon Nitride with Aligned Silicon Nitride Whiskers." Journal of the American Ceramic Society 82, no. 3 (2004): 780–82. http://dx.doi.org/10.1111/j.1151-2916.1999.tb01836.x.

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7

Blumenthal, Daniel J., Rene Heideman, Douwe Geuzebroek, Arne Leinse, and Chris Roeloffzen. "Silicon Nitride in Silicon Photonics." Proceedings of the IEEE 106, no. 12 (2018): 2209–31. http://dx.doi.org/10.1109/jproc.2018.2861576.

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8

He, Jiayu, Yuandong Liu, Xiaofeng Zeng, et al. "Silicon Nitride Bioceramics Sintered by Microwave Exhibit Excellent Mechanical Properties, Cytocompatibility In Vitro, and Anti-Bacterial Properties." Journal of Functional Biomaterials 14, no. 11 (2023): 552. http://dx.doi.org/10.3390/jfb14110552.

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Silicon nitride is a bioceramic with great potential, and multiple studies have demonstrated its biocompatibility and antibacterial properties. In this study, silicon nitride was prepared by a microwave sintering technique that was different from common production methods. SEM and pore distribution analysis revealed the microstructure of microwave-sintered silicon nitride with obvious pores. Mechanical performance analysis shows that microwave sintering can improve the mechanical properties of silicon nitride. The CCK-8 method was used to demonstrate that microwave-sintered silicon nitride has

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9

Han, In Sub, Seung Ho Cheon, Yong Hee Chung, et al. "Preparation and Properties of Silicon Nitride Ceramics by Nitrided Pressureless Sintering (NPS) Process." Key Engineering Materials 317-318 (August 2006): 125–30. http://dx.doi.org/10.4028/www.scientific.net/kem.317-318.125.

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Silicon nitride ceramics were prepared by new nitrided pressureless sintering (NPS) process in this study. The microstructures, strengths and thermal properties of the NPS silicon nitride ceramics containing three types of Al2O3 and Y2O3 sintering additives were investigated. Additionally, we have investigated the effect of silicon metal contents changing with 0, 5, 10, 15 and 20 wt% in each composition. The silicon nitride was successfully densified using NPS process, particularly at the starting composition of 5 wt.% Al2O3, 5 wt.% Y2O3, and 5 wt.% Si addition. The maximum flexural strengths

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10

Hampshire, Stuart. "Silicon Nitride Ceramics." Materials Science Forum 606 (October 2008): 27–41. http://dx.doi.org/10.4028/www.scientific.net/msf.606.27.

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Silicon nitride is one of the major structural ceramics that has been developed following many years of intensive research. It possesses high flexural strength, high fracture resistance, good creep resistance, high hardness and excellent wear resistance. These properties arise from the processing of the ceramic by liquid phase sintering and the development of microstructures in which high aspect ratio grains and intergranular glass phase lead to excellent fracture toughness and high strength. The glass phase softens at high temperature and controls the creep rate of the ceramic. The purpose of

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11

MECARTNEY, M. L., R. SINCLAIR, and R. E. LOEHMAN. "Silicon Nitride Joining." Journal of the American Ceramic Society 68, no. 9 (1985): 472–78. http://dx.doi.org/10.1111/j.1151-2916.1985.tb15811.x.

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12

Horiuchi, Noriaki. "Silicon nitride success." Nature Photonics 6, no. 7 (2012): 412. http://dx.doi.org/10.1038/nphoton.2012.169.

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13

HANABUSA, Takanobu, Shigeyuki UEMIYA, and Toshinori KOJIMA. "Coating of Silicon Nitride Fine-powder on Silicon Nitride Particles." Journal of the Surface Finishing Society of Japan 49, no. 1 (1998): 92–93. http://dx.doi.org/10.4139/sfj.49.92.

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14

Turan, Servet, and Kevin M. Knowles. "Interphase boundaries between hexagonal boron nitride and beta silicon nitride in silicon nitride-silicon carbide particulate composites." Journal of the European Ceramic Society 17, no. 15-16 (1997): 1849–54. http://dx.doi.org/10.1016/s0955-2219(97)00070-8.

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15

Kang, Chang Gyu, Chul Kim, Tae Woo Kim, In Sub Han, and Kee Sung Lee. "Contact Damage and Strength Degradation in Nitrided Pressureless Sintered (NPS) Silicon Nitrided Ceramics." Key Engineering Materials 353-358 (September 2007): 102–5. http://dx.doi.org/10.4028/www.scientific.net/kem.353-358.102.

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A study is made of the damage resistance and strength degradation of nitrided pressureless sintered (NPS) silicon nitride ceramics. The silicon nitride is prepared by cost-effective NPS process combining by nitridation and consecutive pressureless sintering. Contact testing with spherical indenters is used to characterize the damage response. Examination of the indentation sites indicates a quasi-plastic damage modes are observed. Bend tests on specimens containing quasi-plastic contact damages reveal those materials to be not susceptible to strength degradation.

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16

Kondo, Naoki. "High Strength and High Toughness Anisotropic Silicon Nitrides Fabricated by Forging Technique." Key Engineering Materials 280-283 (February 2007): 1213–18. http://dx.doi.org/10.4028/www.scientific.net/kem.280-283.1213.

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Grain alignment control to make anisotropic microstructure is one of the most promising techniques to achieve superior mechanical properties in specific directions. Anisotropic silicon nitrides, which were fabricated by a forging technique, can show superior mechanical properties at room temperature as well as at elevated temperatures. A sinter-forged silicon nitride with yttria and alumina additives exhibited very high strength of 2.1GPa at room temperature, meanwhile that with lutetia additive showed high strength of 700MPa at 1500oC. Anisotropic silicon nitrides are also advantageous to ach

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17

Knowles, Kevin M., and Servet Turan. "Boron nitride–silicon carbide interphase boundaries in silicon nitride–silicon carbide particulate composites." Journal of the European Ceramic Society 22, no. 9-10 (2002): 1587–600. http://dx.doi.org/10.1016/s0955-2219(01)00481-2.

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18

Datye, A. K., S. S. Tsao, and D. R. Myers. "Microstructure of buried nitride films in silicon formed by implanted nitrogen." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 734–35. http://dx.doi.org/10.1017/s0424820100145042.

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High fluence ion implantation of nitrogen ions in silicon is currently of great interest in the formation of silicon on insulator (SOI) structures. After ion implantation, the single crystal silicon water usually exhibits a highly defective surface layer followed by an amorphous layer corresponding to the peak of the nitrogen implant profile. Annealing the sample at ∽ 1200 C yields a buried layer of silicon nitride underneath a top layer of single crystal silicon. The Quality of the single crystal silicon, buried nitride and the silicon/silicon nitride interface is of paramount importance from

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19

GUAHK, KIL HO, IN SUB HAN, and KEE SUNG LEE. "STRENGTH DEGRADATIONS FROM HERTZIAN CONTACT DAMAGES IN NITRIDED PRESSURELESS SINTERED SILICON NITRIDE CERAMICS." International Journal of Modern Physics B 22, no. 09n11 (2008): 1819–26. http://dx.doi.org/10.1142/s021797920804747x.

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Strength degradations in silicon nitride ceramics subject to damage from contact with hard spheres are investigated. Strengths against indentation load, number of cycles in contact, or stress-rate parameter are reported and compared with theoretical models. Silicon nitride ceramics are prepared by nitride pressureless sintering (NPS) process, which process is the continuous process of nitridation reaction of Si metal combined with subsequent pressureless sintering. Microstructure characterizations reveal silicon nitride fabricated by NPS process exhibits a quasi-plastic mode, with continuous s

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20

Kang, Chang Gyu, Joong Gwun Park, Tae Won Kang, et al. "Mechanical Properties of Si₃N₄ Ceramics Prepared by Nitrided Pressureless Sintered (NPS) Process." Solid State Phenomena 124-126 (June 2007): 1461–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.1461.

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As an alternative to degassing pipe and rotor blade using in molten aluminum industry, we investigate the mechanical properties of silicon nitride ceramic components prepared by nitrided pressureless sintered (NPS) process, which process is the continuous process of nitridation reaction process combined with pressureless sintering. Mechanical properties of silicon nitride prepared by NPS process with sintering additives of 5wt% Y2O3, 5wt% Al2O3 and 20wt% Si show high strength, >500 MPa, high hardness, 12.6 GPa, and superior damage tolerances with high fracture toughness, 9.8 MPam1/2.

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21

Ratajczak, Jacek, Krzysztof Hejduk, Marek Lipiński, et al. "Study of Silicon Nanoparticles Formation in Silicon Nitride." Solid State Phenomena 186 (March 2012): 66–69. http://dx.doi.org/10.4028/www.scientific.net/ssp.186.66.

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We present results of the study on the silicon nanoparticles formation in multilayer silicon nitride structures. These structures consist of pairs of stoichiometric silicon nitride dielectric layers (SiNx) and silicon rich nitride layers (SRN). Silicon nanocrystals precipitate from the SRN layer during annealing at high temperatures (1000 °C or 1100 °C). High resolution transmission electron microscopy has been applied for investigation of the nanocrystals formation. Surface photovoltage spectroscopy technique was used for the spectral characterization of prepared structures

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22

Xu, Li Jun, He Ming Zhang, Hui Yong Hu, Xiao Bo Xu, and Jian Li Ma. "The Study of Direct Tunneling Current in Strained MOS Device with Silicon Nitride Stack Gate Dielectric." Applied Mechanics and Materials 110-116 (October 2011): 5442–46. http://dx.doi.org/10.4028/www.scientific.net/amm.110-116.5442.

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As the size of MOS device scaled down to sub 100nm, the direct tunneling current of gate oxide increases more and more. Using silicon nitride as gate dielectric can solve this problem effectively in some time due to the dielectric constant of silicon nitride is larger than silica’s.This paper derived the dielectric constant of silicon nitride stack gate dielectric,and simulated the direct tunneling current of strained MOS device with silica and silicon nitride gate dielectric through device simulation software ISE TCAD10.0,studied the direct tunneling current of strained MOS device with silico

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23

Abe, Osami. "Sintering of silicon nitride with alkaline-earth nitrides." Ceramics International 16, no. 1 (1990): 53–60. http://dx.doi.org/10.1016/0272-8842(90)90063-l.

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24

Wang, Pengfei, Songhua Li, Yuhou Wu, Yu Zhang, Chao Wei, and Yonghua Wang. "Research on Crack Propagation Mechanism of Silicon Nitride Ceramic Ball Bearing Channel Surface Based on Rolling Friction Experiment." Applied Sciences 14, no. 2 (2024): 674. http://dx.doi.org/10.3390/app14020674.

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The application feedback on existing silicon nitride ceramic bearings and RCF experimental research all indicate that the primary failure mode of silicon nitride ceramic bearings is material spalling on the contact surface. Spalling failure occurs due to the initiation and propagation of cracks under rolling contact. However, silicon nitride ceramic bearings, owing to their unique manufacturing method, inevitably exhibit defects and cracks. Therefore, as silicon nitride ceramic bearings are increasingly prevalent, reducing the probability of spalling failure is crucial for extending their serv

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25

Koh, Young-Hag, Hae-Won Kim, and Hyoun-Ee Kim. "Mechanical Properties of Three-Layered Monolithic Silicon Nitride-Fibrous Silicon Nitride/Boron Nitride Monolith." Journal of the American Ceramic Society 85, no. 11 (2004): 2840–42. http://dx.doi.org/10.1111/j.1151-2916.2002.tb00538.x.

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26

Zhao, Yi, Xiao Ying Lv, Zheng Lin Jiang, Xia Li, Yan Huang, and Zhi Gong Wang. "Silicon Nitride Surface Modification and Cell Adhesion." Materials Science Forum 610-613 (January 2009): 1022–25. http://dx.doi.org/10.4028/www.scientific.net/msf.610-613.1022.

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Silicon microelectrode arrays (Si MEAs) have great potential in recording of neural activity; the biocompatibility of silicon nitride has gained much attention as a part of Si MEAs. In this study, we used alternating polycations, polyethyleneimine (PEI), and polyanions, gelatin, to fabricate multilayer films built up by LbL deposition on silicon nitride wafers. Then the samples surfaces were characterized by contact angle system and atomic force microscopy (AFM). The amount of proteins adsorbed on silicon nitride and modified silicon nitride were measured by a modified Coomassie brilliant blue

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27

Wei, Jun Cong, Jun Bo Tu, and Jian Cao. "Effect of Silicon on Molten Iron Corrosion Resistance of Corundum-Silicon Nitride Composites." Advanced Materials Research 284-286 (July 2011): 210–13. http://dx.doi.org/10.4028/www.scientific.net/amr.284-286.210.

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Molten iron corrosion resistance of silicon-corundum-silicon nitride composites were investigated using corundum, silicon nitride, clay and silicon powder as the main starting materials by static crucible method. The corrosion mechanism of the composites was analyzed by means of scanning electron microscope (SEM with EDS). The results revealed that corundum-silicon nitride composites possessed good molten iron corrosion behavior and the active oxidation of silicon nitride was the main reason for loose structure of the corroded specimen; The composites produced a dense layer by addition of sili

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28

Brito, M. E., K. Watari, K. Hirao, and M. Toriyama. "“Special Boundaries” in Silicon Nitride With High Thermal Conductivty." Microscopy and Microanalysis 6, S2 (2000): 384–85. http://dx.doi.org/10.1017/s1431927600034413.

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Significant improvements in the fracture resistance, fracture toughness and thermal properties of silicon nitride ceramics are obtained by tailoring the microstructure. Combined use of seeding and tape casting techniques allowed the production of highly anisotropic microstructures. The seeded silicon nitrides exhibited a distinct bimodal microstructure, with large elongated β-Si3N4 grains, grown from seeds, dispersed within a fine-grained matrix. These large grains in the seeded silicon nitrides lie in the casting planes and self-align along the casting direction during tape forming process. I

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29

Gan, Zhenghao, Changzheng Wang, and Zhong Chen. "Material Structure and Mechanical Properties of Silicon Nitride and Silicon Oxynitride Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition." Surfaces 1, no. 1 (2018): 59–72. http://dx.doi.org/10.3390/surfaces1010006.

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Silicon nitride and silicon oxynitride thin films are widely used in microelectronic fabrication and microelectromechanical systems (MEMS). Their mechanical properties are important for MEMS structures; however, these properties are rarely reported, particularly the fracture toughness of these films. In this study, silicon nitride and silicon oxynitride thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) under different silane flow rates. The silicon nitride films consisted of mixed amorphous and crystalline Si3N4 phases under the range of silane flow rates investiga

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30

Biasini, V., S. Guicciardi, and A. Bellosi. "Silicon nitride-silicon carbide composite materials." International Journal of Refractory Metals and Hard Materials 11, no. 4 (1992): 213–21. http://dx.doi.org/10.1016/0263-4368(92)90048-7.

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Bijoy, Haider Mahmud, Himu Suprio Saha, Desha Farzana Islam, et al. "Exploring Silicon Nitride Gate Materials for Enhanced Performance of Silicon-Based MOSFET." AIUB Journal of Science and Engineering (AJSE) 23, no. 3 (2024): 238–47. https://doi.org/10.53799/ajse.v23i3.1201.

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This research paper investigates the potential of silicon nitride gate materials for enhancing the performance of silicon- based Metal-Oxide -Semiconductor Field-Effect Transistors (MOSFETs). Through simulations conducted using COMSOL Multiphysics, we analyzed the impact of using silicon nitride gate materials on MOSFET performance. Our results demonstrate that silicon nitride gate materials offer improved device characteristics, including reduced gate leakage currents, enhanced carrier mobility, and reduced threshold voltage variability. These findings underscore the potential of silicon nitr

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32

DesOrmeaux, J. P. S., J. D. Winans, S. E. Wayson, et al. "Nanoporous silicon nitride membranes fabricated from porous nanocrystalline silicon templates." Nanoscale 6, no. 18 (2014): 10798–805. http://dx.doi.org/10.1039/c4nr03070b.

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Free standing ultrathin nanoporous silicon nitride membranes are fabricated on a wafer scale by transferring the pores from porous nanocrystalline silicon into a silicon nitride film by reactive ion etch.

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Schneider, V., C. Reimann, and J. Friedrich. "Wetting and infiltration of nitride bonded silicon nitride by liquid silicon." Journal of Crystal Growth 440 (April 2016): 31–37. http://dx.doi.org/10.1016/j.jcrysgro.2016.02.002.

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Kawai, Ch, and A. Yamakawa. "Preparation of fibre-like silicon nitride from amorphous silicon nitride powder." Journal of Materials Science Letters 14, no. 3 (1995): 192–93. http://dx.doi.org/10.1007/bf00318253.

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Liu, Jian, Kai Liu, Hong Sheng Wang, Fang Gao, and Rong Liao. "Preparation of Silicon Nitride Porous Ceramics." Key Engineering Materials 512-515 (June 2012): 824–27. http://dx.doi.org/10.4028/www.scientific.net/kem.512-515.824.

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A silicon nitride porous ceramics having excellent mechanical strength and dielectric properties can be employed as a wave-transparent material. The silicon nitride porous ceramic contains a plurality of silicon nitride crystal grains with pores formed in grain boundary which forms a three-dimensional network structure. The properties of the silicon nitride porous ceramics was studied , the porous ceramics was prepared by different process parameters, including the pressure of cold isostatic pressing, temperature of sintering and sintering atmosphere, etc.; A high porosity(>50%), high stren

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Majeed, U., I. Tariq, M. Wasib, and M. K. Mustafa. "Surface study of RF magnetron sputtered silicon nitride thin films." Journal of Optoelectronic and Biomedical Materials 15, no. 2 (2023): 55–64. http://dx.doi.org/10.15251/jobm.2023.152.55.

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Silicon nitride thin films were deposited on the one-sided P-type polished boron-doped silicon wafer substrate via RF magnetron sputtering using stochimetric silicon nitride target at various target-to-substrate distances. Target to substrate spacing, a nonconventional parameter, was varied to optimize the surface roughness and grain size. This optimization provided a normal distribution of homogenous, densely packed silicon nitride thin film free of surface cracks.. Atomic Force Microscopy was employed to explore the accurate surface roughness parameters of Silicon nitride thin films. The sur

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37

Yurkov, Andrey. "Silicon Carbide–Silicon Nitride Refractory Materials: Part 1 Materials Science and Processing." Processes 11, no. 7 (2023): 2134. http://dx.doi.org/10.3390/pr11072134.

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Silicon carbide and silicon nitride materials were intensively studied in the end of the past century, yet some aspects of its physical chemistry require investigation. The strength characteristics of Si3N4-SiC refractories are moderate; however, these materials sometimes demonstrate “stress–strain” behavior, more typical for composite materials than for the brittle ceramics. These materials may be considered to be ceramic composites because they consist of big grains of silicon carbide surrounded by small grains of silicon nitride, with strict interfaces between them. There is no direct certa

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38

Kusunose, Takafumi, Tohru Sekino, Yong-Ho Choa, and Koichi Niihara. "Machinability of Silicon Nitride/Boron Nitride Nanocomposites." Journal of the American Ceramic Society 85, no. 11 (2004): 2689–95. http://dx.doi.org/10.1111/j.1151-2916.2002.tb00515.x.

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Gogotsi, Yu G., and G. Grathwohl. "Creep of silicon nitride-titanium nitride composites." Journal of Materials Science 28, no. 16 (1993): 4279–87. http://dx.doi.org/10.1007/bf01154933.

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Li, Cui Wei, Chang An Wang, and Yong Huang. "Mechanical Properties and Oxidation Behavior of Si₃N₄/BN Laminated Ceramics." Key Engineering Materials 280-283 (February 2007): 1869–72. http://dx.doi.org/10.4028/www.scientific.net/kem.280-283.1869.

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Laminated ceramics with high mechanical properties were fabricated in the Si3N4/BN system. The mechanical properties at elevated temperatures were tested, and the oxidation behavior during tested procedure was studied at the same time. The flexure strength of the Si3N4/BN laminated ceramics changed a little below 1000°C. The displacement-load curves appeared non-linear characteristic even at high temperature. During testing procedure at high temperature, oxidation behavior of silicon nitride and silicon carbide happened, and no oxidation product of boron nitride was found. The silicon nitride

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41

Mir, Aqib Hussain, and SN Ahmad. "A study on fabrication of silicon nitride-based advanced ceramic composite materials via spark plasma sintering." Proceedings of the Institution of Mechanical Engineers, Part L: Journal of Materials: Design and Applications 235, no. 8 (2021): 1739–56. http://dx.doi.org/10.1177/14644207211013560.

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The present study provides an overview of the fabrication of silicon nitride (Si3N4)-based advanced ceramic materials using spark plasma sintering. Being an excellent engineering ceramic material, silicon nitride is extensively being used in tribological components, aerospace, and automotive industries due to its unique blend of thermo-mechanical, tribological, and chemical properties. The selection of the sintering process, as well as sintering aids, strongly affects the properties of silicon nitride ceramics. Several conventional sintering techniques have been utilized in the past to optimiz

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Yang, Seung-Dong, Jun-Kyo Jung, Jae-Gab Lim, Seong-gye Park, Hi-Deok Lee, and Ga-Won Lee. "Investigation of Intra-Nitride Charge Migration Suppression in SONOS Flash Memory." Micromachines 10, no. 6 (2019): 356. http://dx.doi.org/10.3390/mi10060356.

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In order to suppress the intra-nitride charge spreading in 3D Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) flash memory where the charge trapping layer silicon nitride is shared along the cell string, N2 plasma treated on the silicon nitride is proposed. Experimental results show that the charge loss decreased in the plasma treated device after baking at 300 °C for 2 h. To extract trap density according to the location in the trapping layer, capacitance-voltage analysis was used and N2 plasma treatment was shown to be effective to restrain the interface trap formation between blocking oxide and

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Ge, Huayun, Xing Li, Chunlin Guo, Tao Ke, and Rui Jia. "Investigation on PID capability degradation of inactivation mediums for instance alumina/silicon nitride sin based on transparent silicon high-efficiency solar cells." Thermal Science, no. 00 (2022): 222. http://dx.doi.org/10.2298/tsci221022222g.

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Solar energy is a pure and reproducible energy. China has paid more and more consideration to the investigation and employment of solar energy. The investigation focuses on the phenomenon of PID capability degradation of inactivation mediums for instance alumina/silicon nitride SiN in transparent silicon high-efficiency solar cells. Through the laboratorial investigation on the effect of individual inactivation membrane processes on the PID damping behavior, it is found that the deposition approach of silicon oxide and silicon nitride inactivation membranes on the surface of transparent silico

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Richetto, Katia C. S., and Cosme Roberto Moreira Silva. "Synthesis of Silicon Nitride Using Taguchi Planning Methodology." Materials Science Forum 591-593 (August 2008): 760–65. http://dx.doi.org/10.4028/www.scientific.net/msf.591-593.760.

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Silicon Nitride is considered as an important material for use in structural applications. Its performance is severely influenced by modern synthesis processes. In the present work, silicon nitride powder synthesis was performed using liquid silicon tetrachloride and gaseous ammonia, at low temperature and inert atmosphere. Diimide pyrolisis was made on temperature between 1300 and 1500 0C. A Taguchi design of experiments methodology was applied, aiming to obtain powders with appropriated characteristics for structural applications. On pyrolisis, the use of alumina based substrates resulted on

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Riedel, Ralf, Elisabeta Horvath-Bordon, Hans Joachim Kleebe, et al. "New Ceramic Phases in the Ternary Si-C-N System." Key Engineering Materials 403 (December 2008): 147–48. http://dx.doi.org/10.4028/www.scientific.net/kem.403.147.

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The ultra-high pressure and temperature synthesis of spinel silicon nitride and germanium nitride on the one hand as well as the successful synthesis of tin nitride at ambient pressure on the other hand have caused an enormous impact on both basic science and technological development of advanced nitrides. Aim and scope of the research in this field is to synthesize novel nitrides for structural and functional applications. High presssure nitrides may combine ultra-high hardness with high thermal stability in terms of decomposition in different environments and are expected to show interesting

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Du, Xiaoyu, Seunghun S. Lee, Gurdial Blugan, and Stephen J. Ferguson. "Silicon Nitride as a Biomedical Material: An Overview." International Journal of Molecular Sciences 23, no. 12 (2022): 6551. http://dx.doi.org/10.3390/ijms23126551.

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Silicon nitride possesses a variety of excellent properties that can be specifically designed and manufactured for different medical applications. On the one hand, silicon nitride is known to have good mechanical properties, such as high strength and fracture toughness. On the other hand, the uniqueness of the osteogenic/antibacterial dualism of silicon nitride makes it a favorable bioceramic for implants. The surface of silicon nitride can simultaneously inhibit the proliferation of bacteria while supporting the physiological activities of eukaryotic cells and promoting the healing of bone ti

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Marita, Yusrini, and Iskandar Idris Yaacob. "Synthesis and Characterization of Nickel-Iron-Silicon Nitride Nanocomposite." Advanced Materials Research 97-101 (March 2010): 1360–63. http://dx.doi.org/10.4028/www.scientific.net/amr.97-101.1360.

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Nickel-iron-silicon nitride nanocomposite thin films were prepared by electrodeposition technique. The deposition was performed at current density of 11.5 A dm-2. Nano-size silicon nitride was mixed in the electrolyte bath as dispersed phase. The effects of silicon nitride nanoparticulates in the nickel-iron nanocomposite thin films were investigated in relation to the amount of silicon nitride in the plating bath. X-ray diffraction (XRD) analysis showed that the deposited nickel iron film has face-centered cubic structure (FCC). However, a mixture of body-centered cubic (BCC) and face-centere

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Wang, Jia Hua, Ying Long, Shang Hua Wu, Jie Qin, and Jun Jie Zeng. "Cutting Performance and Wear Mechanism of Coated Silicon Nitride Cutting Tool in Turning of High Hardness Alloy Steel." Materials Science Forum 800-801 (July 2014): 214–20. http://dx.doi.org/10.4028/www.scientific.net/msf.800-801.214.

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Silicon nitride cutting tool, which is widely applied to machine cast irons, is not suitable for steel cutting because of the massive chemical wear between silicon nitride and ferrous materials. Covering protective coating (s) on tool surface is an effective way to isolate the chemical contact between cutting tool and workpiece. The aim of this paper is to investigate the cutting performance and cutting mechanism of coated silicon nitride cutting tools on steel machining. The cutting performances of uncoated and CVD-Al2O3/TiN coated silicon nitride cutting tool when cutting high hardness alloy

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Nishimura, Toshiyuki, Mamoru Mitomo, and Hisayuki Suematsu. "High temperature strength of silicon nitride ceramics with ytterbium silicon oxynitride." Journal of Materials Research 12, no. 1 (1997): 203–9. http://dx.doi.org/10.1557/jmr.1997.0027.

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Silicon nitride ceramics with ytterbium silicon oxynitride (Yb4Si2O7N2) as secondary phase were fabricated by hot-pressing the powder mixtures, including 50.0 to 97.0 mol% of silicon nitride with a mixture of Yb2O3 and SiO2 (Yb2O3/SiO2 = 4). Sinterability of the materials with Yb2O3 was higher than that with Y2O3 in the same composition of raw powder mixtures. High density materials were obtained under the condition of 50.0 to 89.1 mol% of silicon nitride in raw powder mixtures. Mechanical properties of silicon nitride containing 97.6 mol% of Si3N4 and 2.4 mol% of Yb4Si2O7N2 were measured. Fra

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KIM, JONG HO, HANEUL KIM, DO KYUNG KIM, and SOON NAM CHANG. "CHARACTERIZATION OF SUBSURFACE DAMAGE OF EXPLOSIVELY INDENTED SILICON NITRIDE CERAMICS." International Journal of Modern Physics B 22, no. 09n11 (2008): 1504–9. http://dx.doi.org/10.1142/s0217979208046992.

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In this study, explosive indentations were used to characterize the dynamic damage behavior of silicon nitride ceramics with different microstructures. Three grades of silicon nitrides with different grain size and shape were prepared. Subsurface damage of specimens was characterized extensively using optical and electron microscopy. It was found that the dynamic damage response depends strongly on the microstructure of specimens, particularly on the glassy grain boundary phase.

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