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Artykuły w czasopismach na temat „SiOx Matrix”

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Data publikacji: 7 września 2023

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Sarikov, Andrey. "Thermodynamic Theory of Phase Separation in Nonstoichiometric Si Oxide Films Induced by High-Temperature Anneals." Nanomanufacturing 3, no. 3 (2023): 293–314. http://dx.doi.org/10.3390/nanomanufacturing3030019.

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High-temperature anneals of nonstoichiometric Si oxide (SiOx, x < 2) films induce phase separation in them, with the formation of composite structures containing amorphous or crystalline Si nanoinclusions embedded in the Si oxide matrix. In this paper, a thermodynamic theory of the phase separation process in SiOx films is proposed. The theory is based on the thermodynamic models addressing various aspects of this process which we previously developed. A review of these models is provided, including: (i) the derivation of the expressions for the Gibbs free energy of Si oxides and Si/Si oxide systems, (ii) the identification of the phase separation driving forces and counteracting mechanisms, and (iii) the crystallization behavior of amorphous Si nanoinclusions in the Si oxide matrix. A general description of the phase separation process is presented. A number of characteristic features of the nano-Si/Si oxide composites formed by SiOx decomposition, such as the local separation of Si nanoinclusions surrounded by the Si oxide matrix; the dependence of the amount of separated Si and the equilibrium matrix composition on the initial Si oxide stoichiometry and annealing temperature; and the correlation of the presence of amorphous and crystalline Si nanoinclusions with the presence of SiOx (x < 2) and SiO2 phase, respectively, in the Si oxide matrix, are explained.

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Delimitis, A., S. D. Pappas, S. Grammatikopoulos, et al. "Microstructural Investigation of SiO_x Thin Films Grown by Reactive Sputtering on (001) Si Substrates." Journal of Nano Research 17 (February 2012): 147–56. http://dx.doi.org/10.4028/www.scientific.net/jnanor.17.147.

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In the Current Study, the Structural Characteristics of Siox Thin Films Grown by Magnetron Sputtering on Si Substrates Are Reported. High Resolution Transmission Electron Microscopy Revealed the Formation of Amorphous Siox Films for the as-Deposited Samples, as Well as the Ones Annealed in Ambient Air for 30 Min at 950oC and of Si Nanocrystals, Embedded in Amorphous Siox, after Ar Annealing for 1-4 Hours at 1000oC. the Nanocrystals, with Sizes up to 6 Nm, Predominately Exhibit {111} Lattice Planes. Energy-Dispersive X-Ray Analysis Showed that the Si/O Ratio Is between 0.5-1, I.e. the Amorphous Films Comprise of a Mixture of Sio2 and Sio. Phase Images and Corresponding Strain Maps Created Using Fourier Filtering Revealed a Uniform Contrast in the Nanocrystals, which Shows that the Si Lattice Constant Does Not Vary Significantly. the Residual Strain Variations, around 4%, May Account for the Possible Existence of a Small Percentage of Highly Disordered Si or Siox Residual Clusters inside the Regular Si Matrix, in Full Agreement with Photoluminescence Measurements Performed on the same Materials.

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Kizjak, Anatoliy, Anatoliy Evtukh, Olga Steblova, and Yuriy Pedchenko. "Electron Transport through Thin SiO₂ Films Containing Si Nanoclusters." Journal of Nano Research 39 (February 2016): 169–77. http://dx.doi.org/10.4028/www.scientific.net/jnanor.39.169.

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The electron transport mechanisms through nanocomposite SiO2(Si) films containing Si nanoclusters into dielectric SiO2 matrix have been investigated. SiO2(Si) films were obtained by oxide assisted growth. At the first stage the SiOx films with different content of excess Si were deposited by LP CVD method. Second stage includes high temperature (T=1100 C) annealing of SiOx films that promotes formation of Si nanocrystals. Current transport through SiO2(Si) films were studied in temperature range 100-350 K. As it was observed the dominant mechanism of electron transport depends as on voltage and temperature. The Mott’s conductivity caused by traps near Fermi level was revealed in low-voltage range for all temperatures. At increasing the voltage the SCLC conductivity is observed for films with higher content of excess silicon while in case low content of Si the Pool-Frenkel mechanism dominates. The further increase in voltage results in a double carrier injection.

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Nikolenko, A. S. "Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix." Semiconductor Physics Quantum Electronics and Optoelectronics 16, no. 1 (2013): 86–90. http://dx.doi.org/10.15407/spqeo16.01.086.

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Milutinović, A., Z. Dohčević-Mitrović, Diana Nesheva, M. Šćepanović, M. Grujić-Brojčin, and Zoran V. Popović. "Infrared and Photoluminescence Study of Rapidly Thermally Annealed SiO_x Thin Films." Materials Science Forum 555 (September 2007): 309–14. http://dx.doi.org/10.4028/www.scientific.net/msf.555.309.

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Silicon suboxide, SiOx thin films with different oxygen contents (1.15≤x≤1.70) were prepared by thermal evaporation of silicon monoxide at a residual oxygen pressure of 1·10-3 Pa and deposition rates of 0.2, 1.0, 3.0 and 6.0 nm/s. Rapid thermal annealing (RTA) of films was carried out at 1100°C in vacuum for 15 and 30 s and the films were analyzed by infrared (FTIR) and photoluminescence (PL) spectroscopy. In the FTIR spectra of SiOx annealed samples, a blue-shift of the stretching band with initial oxygen content, x, is observed. This band is shifted to a much lower frequency with prolonged RTA time. This behavior can be interpreted in terms of the partial decrease of oxygen content and film density upon annealing in vacuum. With annealing time increase a new band at 1106 cm-1 appears. Therefore, infrared spectra of SiOx films are significantly affected by the oxygen content. PL spectra of these films also change drastically with increasing annealing time. In the PL spectra of films annealed for 15 s two bands are easily visible: broad redorange band at 2.2 eV and a green band at 2.4 eV, while for 30 s annealing only low-energy band exists. Green band is connected with the defects in the SiOx matrix while red-orange band can be deconvoluted into several bands at 2.0, 2.3 and 2.5 eV. Two types of defects can be responsible for the PL band at about 2 eV: defects in a-Si (amorphous silicon) nanoparticles separated during RTA, and nonbridging oxygen hole recombination centers (NBOHC) formed by loosing of oxygen during RTA. The PL band at 2.3 eV is associated with the defects formed at a-Si/SiOx interfaces while a hardly visible band at 2.5 eV is related to the defects connected with the oxygen deficiency formed in the SiOx matrix during RTA.

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Curiel, Mario, Ivan Petrov, Nicola Nedev, et al. "Formation of Si Nanocrystals in Thin SiO₂ Films for Memory Device Applications." Materials Science Forum 644 (March 2010): 101–4. http://dx.doi.org/10.4028/www.scientific.net/msf.644.101.

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X-ray Diffraction and Reflectivity, Transmission Electron Microscopy and Atomic Force Microscopy were applied to study the effect of thermal annealing on the properties of thin SiOx films (~ 15 nm) prepared by thermal evaporation of SiO in vacuum. It has been shown that furnace annealing at 1000 oC causes phase separation and formation of uniformly distributed Si nanocrystals into a SiO2 matrix. Clockwise hysteresis has been observed in the C-V curves measured and explained by assuming charging and discharging of the NCs with carriers, which tunnel from the Si substrate.

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Prikryl, Radek, Pavel Otrisal, Vladimir Obsel, Lubomír Svorc, Radovan Karkalic, and Jan Buk. "Protective Properties of a Microstructure Composed of Barrier Nanostructured Organics and SiOx Layers Deposited on a Polymer Matrix." Nanomaterials 8, no. 9 (2018): 679. http://dx.doi.org/10.3390/nano8090679.

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The SiOx barrier nanocoatings have been prepared on selected polymer matrices to increase their resistance against permeation of toxic substances. The aim has been to find out whether the method of vacuum plasma deposition of SiOx barrier nanocoatings on a polyethylene terephthalate (PET) foil used by Aluminium Company of Canada (ALCAN) company (ALCAN Packaging Kreuzlingen AG (SA/Ltd., Kreuzlingen, Switzerland) within the production of CERAMIS® packaging materials with barrier properties can also be used to increase the resistance of foils from other polymers against the permeation of organic solvents and other toxic liquids. The scanning electron microscopy (SEM) microstructure of SiOx nanocoatings prepared by thermal deposition from SiO in vacuum by the Plasma Assisted Physical Vapour Deposition (PA-PVD) method or vacuum deposition of hexamethyldisiloxane (HMDSO) by the Plasma-enhanced chemical vapour deposition (PECVD) method have been studied. The microstructure and behavior of samples when exposed to a liquid test substance in relation to the barrier properties is described.

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Luna-López, José Alberto, G. Garcia-Salgado, J. Carrillo-López, et al. "Si Nanocrystals Deposited by HFCVD." Solid State Phenomena 194 (November 2012): 204–8. http://dx.doi.org/10.4028/www.scientific.net/ssp.194.204.

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The structural and optical properties of Si nanocrystal (Si-nc) embedded in a matrix of off-stoichiometric silicon oxide (SiOx, x<2) films prepared by hot filament chemical vapor deposition technique were studied. The films emit a wide photoluminescent spectra and the maximum peak emission shows a blue-shift as the substrate temperature (Ts) decreases. Also, a wavelength-shift of the absorption edge in transmittance spectra is observed, indicating an increase in the energy band gap. The Si-nc’s size decreased from 6.5 to 2.5 nm as Ts was reduced from 1150 to 900 °C, as measured through High Resolution Transmission Electron Microscopy analysis. A combination of mechanisms is proposed to explain the photoluminescence in the SiOx films, which involve SiOx defects and quantum confinement effects.

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Han, Li Hao, Jing Wang, and Ren Rong Liang. "Germanium-Silicon Quantum Dots Produced by Pulsed Laser Deposition for Photovoltaic Applications." Advanced Materials Research 383-390 (November 2011): 6270–76. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.6270.

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Quantum dots applied in solar cells will be of great importance to enhance the quantum tunneling efficiency and improve the photogenerated current transport. In this study, a new easy-to-operate technology was developed to fabricate germanium-silicon quantum dots in a SiOx matrix. The quantum dots were formed by first deposited germanium-rich SiO on quartz substrate using pulsed laser deposition technique and then annealed under a comparatively high temperature. We have demonstrated a stable and low-cost fabrication process which is much cheaper than the epitaxy method to provide for the fabrication of high density germanium-silicon quantum dots. Quantum dots with diameters of 3~4 nm embedded in the amorphous SiOx layer were clearly observed. The morphological features of the thin film were characterized. The optical properties were performed by Raman spectroscopy, photoluminescence spectrum and XRD test respectively to verify the crystallization of quantum dots in the SiOx matrix. Reflectance spectrum displayed a high light absorption rate in a spectra region from 300 nm to 1200 nm, evidencing that germanium-silicon quantum dots have promising features to be used as absorber for photovoltaic application.

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Feng, Xuejiao, Hongmin Cui, Zhenming Li, Rongrong Miao, and Nanfu Yan. "Scalable Synthesis of Dual-Carbon Enhanced Silicon-Suboxide/Silicon Composite as Anode for Lithium Ion Batteries." Nano 12, no. 07 (2017): 1750084. http://dx.doi.org/10.1142/s1793292017500849.

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The SiOx/Si composite enhanced by dual-carbon (i.e., multiwall carbon nanotubes and carbon) was fabricated from the micro silicon monoxide (SiO) by the combination of high-energy mechanical milling, spray drying and pyrolysis. The obtained SiOx/Si particles were composed of Si-suboxide and embedded nano-sized Si crystallites. As one of dual-carbons, the multi-walled carbon nanotubes were directly scaffolded of anchoring the SiOx/Si composite particles through spray drying. Another carbon source was directly deposited on the surface of the SiOx/Si by means of the carbonization of phenol–formaldehyde resin. Nano-sized silicon embedded in the Si-suboxide matrix and dual-carbon provided a compromise between the reversible capacity and cycle stability related to the volume change. The obtained SiOx/Si/MWCNT/PC-1 electrode delivered an initial capacity of 936.5[Formula: see text]mAh g[Formula: see text] and the reversible capacity was maintained at 825.9[Formula: see text]mAh g[Formula: see text] with excellent capacity retention of 87.5% on the 200th cycle versus the 6th one (compared with the same current rate). In contrast, although the SiOx/Si presented the higher initial capacity of 1271.4[Formula: see text]mAh g[Formula: see text], its capacity dropped quickly after several cycles and capacity retention was only 25.6% versus the 6th cycle after 100 cycles.

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Shen, Yi, Jiechao Jiang, Petr Zeman, et al. "Microstructure of High Temperature Oxidation Resistant Hf6B10Si31C2N50 and Hf7B10Si32C2N44 Films." Coatings 10, no. 12 (2020): 1170. http://dx.doi.org/10.3390/coatings10121170.

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High-temperature oxidation resistant amorphous Hf6B10Si31C2N50 and Hf7B10Si32C2N44 films were deposited by reactive pulsed dc magnetron sputtering. To investigate the oxidation mechanism, the films were annealed up to 1500 °C in air. The evolved microstructures were studied by X-ray diffraction and transmission electron microscopy. A three-layered microstructure was developed upon exposure to high temperature. An oxidized layer formed at the top surface for both films consisting of monoclinic and/or orthorhombic m-/o-HfO2 nanoparticles embedded in an amorphous SiOx-based matrix. The as-deposited bottom layer of the films remained amorphous (Hf6B10Si31C2N50) or partially recrystallized (Hf7B10Si32C2N44) exhibiting a h-Si3N4 and HfCxN1−x distribution along with formation of t-HfO2 at its top section. The two layers were separated by a partially oxidized transition layer composed of nanocrystalline h-Si3N4 and tetragonal t-HfO2. The oxidation process initiates at the bottom/transition layer interface with oxidation of Hf-rich domains either in the amorphous structure or in HfCxN1−x nanoparticles resulting in t-HfO2 separated by Si3N4 domains. The second stage occurs at the oxidized/transition layer interface characterized by densely packed HfO2, Si3N4 and quartz SiO2 nanostructures that can act as a barrier for oxygen diffusion. The small t-HfO2 nanoparticles merge and transform into large m-/o-HfO2 while h-Si3N4 forms amorphous SiOx matrix. A similar oxidation mechanism was observed in both films despite the different microstructures developed.

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Zhang, X. H., S. J. Chua, A. M. Yong, et al. "Exciton radiative lifetime in ZnO quantum dots embedded in SiOx matrix." Applied Physics Letters 88, no. 22 (2006): 221903. http://dx.doi.org/10.1063/1.2207848.

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Nesheva, D., C. Raptis, Z. Levi, Z. Popovic, and I. Hinic. "Photoluminescence of CdSe nanocrystals embedded in a SiOx thin film matrix." Journal of Luminescence 82, no. 3 (1999): 233–40. http://dx.doi.org/10.1016/s0022-2313(99)00043-5.

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Jie, Y. X., X. Wu, C. H. A. Huan, et al. "Synthesis and characterization of Ge nanocrystals immersed in amorphous SiOx matrix." Surface and Interface Analysis 28, no. 1 (1999): 195–99. http://dx.doi.org/10.1002/(sici)1096-9918(199908)28:1<195::aid-sia606>3.0.co;2-l.

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Zhang, X. H., Soo Jin Chua, A. M. Yong, et al. "Fabrication and Optical Properties of ZnO Quantum Dots." Advanced Materials Research 31 (November 2007): 71–73. http://dx.doi.org/10.4028/www.scientific.net/amr.31.71.

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Using a simple process of the deposition of ZnO thin films on SiOx/Si substrates and subsequent thermal annealing, we fabricated ZnO quantum dots embedded in silicon oxide matrix. The ZnO quantum dots were characterized using transmission electron microscopy and timeintegrated photoluminescence. The photoluminescence of the quantum dots show a blue-shift of 47 meV due to the quantum confinement effect.

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Ложкина, Д. А., Е. В. Астрова, Р. В. Соколов та ін. "Формирование кремниевых нанокластеров при диспропорционировании моноокиси кремния". Физика и техника полупроводников 55, № 4 (2021): 373. http://dx.doi.org/10.21883/ftp.2021.04.50743.9575.

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In this work, the processes of disproportionation of solid-phase silicon monoxide, accompanied by the formation of nanocrystalline silicon precipitates in the medium of amorphous SiOx suboxide (initial composition SiO0.9), have been studied. Based on the data of X-ray diffraction analysis and transmission electron microscopy, the dynamics of changes in the amount, concentration and size of phase precipitates of silicon with an increase in the temperature of isochronous annealing from 800 °C to 1200 °C is traced. It was found that with a monotonic increase in the total mass of the precipitated silicon, the number of its crystallization centers per unit volume nonmonotonically depends on temperature. The activation energy of diffusion of silicon atoms in the SiOx matrix was determined to be Ea1= 1.64 eV, and the activation energy of their transfer from the formed precipitates to the growth medium of SiOx was Ea2 = 2.38 eV. Anisotropic deformation of silicon crystallites precipitated during the disproportionation of SiO has been revealed for the first time. This phenomenon is associated with the difference in the specific volumes of the separated phases and the anisotropy of the growth rate of silicon precipitates formed in a solid amorphous medium.

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Kumar, V. V. Siva, and D. Kanjilal. "Enhancement in visible luminescence from nanocomposite ZnO-SiOx thin films due to annealing." Functional Materials Letters 07, no. 02 (2014): 1450007. http://dx.doi.org/10.1142/s1793604714500076.

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The annealing induced enhancement in visible photoluminescence (PL) from nanocomposite (nc) ZnO – SiO x thin films was investigated. Nc ZnO – SiO x thin films consisting of ZnO nanocrystals in silica matrix were grown by depositing the films using radio frequency (rf) reactive co-sputtering and post-annealing them at temperatures of 350°C and 500°C in high vacuum and air. These films were characterized by Fourier transform infrared (FTIR), (PL) spectroscopy and UV–Vis spectrophotometry measurements. Thin films were also deposited on transmission electron microscopy (TEM) grids in almost identical conditions. The TEM measurement of the thin film deposited on TEM grid shows the formation of ZnO nanocrystals with a size distribution from 3.0 nm to 6.8 nm (+/-0.2 nm) in silica matrix. The UV–Vis spectra of the films show absorption features of ZnO and Zn 2 SiO 4 phases in the films. The visible PL emission intensity and peak width increased in the annealed films. The results suggest increase in the number and size distribution of the ZnO nanocrystals in silica matrix due to the annealing resulting in increase in visible PL emission. The results of vacuum annealed films indicate that these films can be useful in the development of wide band visible light emitting devices using this material.

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Song, Seunggon, Kyongmin Kim, Kyun Ho Jung, Junghyun Sok, and Kyoungwan Park. "Properties of Resistive Switching in TiO₂ Nanocluster-SiOx(x<2) Matrix Structure." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 18, no. 1 (2018): 108–14. http://dx.doi.org/10.5573/jsts.2018.18.1.108.

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Yazicioglu, Deniz, Sebastian Gutsch, and Margit Zacharias. "(Invited) Size Controlled Silicon Quantum Dots: Understanding Basic Properties and Electronic Applications." ECS Meeting Abstracts MA2022-01, no. 20 (2022): 1077. http://dx.doi.org/10.1149/ma2022-01201077mtgabs.

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The fabrication of SiOx/SiO2 superlattices combined with thermal annealing enables the size and density control of Si quantum dots. The layered-arranged Si quantum dots represent a model system to systematically study the photonic and electronic properties of indirect gap quantum dots prepared in a CMOS compatible way. Hence, the model system is used to understand the interplay of absorption and recombination, the carrier kinetics and the electronic transport properties for matrix embedded Si quantum dots. The interplay of radiative and non-radiative recombination will be discussed for high quantum yield. Doping of Si quantum dots and the respective quantification is at the limit of the respective high resolution techniques but clearly show the effect of self-purification. The effect of an externally applied electric field on exciton separation and carrier transport will be discussed..

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Curiel, Mario, Nicola Nedev, Judith Paz, et al. "UV Sensitivity of MOS Structures with Silicon Nanoclusters." Sensors 19, no. 10 (2019): 2277. http://dx.doi.org/10.3390/s19102277.

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Selective UV sensitivity was observed in Metal-Oxide-Semiconductor structures with Si nanoclusters. Si nanocrystals and amorphous Si nanoparticles (a-Si NPs) were obtained by furnace annealing of SiOx films with x = 1.15 for 60 min in N2 at 1000 and 700 °C, respectively. XPS and TEM analysis prove phase separation and formation of Si nanocrystals in SiO2, while the a-Si NPs are formed in SiO1.7 matrix. Both types of structures show selective sensitivity to UV light; the effect is more pronounced in the structure with nanocrystals. The responsivity of the nanocrystal structure to 365 nm UV light is ~ 4 times higher than that to green light at 4 V applied to the top contact. The observed effect is explained by assuming that only short wavelength radiation generates photocarriers in the amorphous and crystalline nanoclusters.

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Huang, Xieyi, Peng Wang, Zhichao Zhang, et al. "Efficient conversion of CO2 to methane using thin-layer SiOx matrix anchored nickel catalysts." New Journal of Chemistry 43, no. 33 (2019): 13217–24. http://dx.doi.org/10.1039/c9nj03152a.

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Sayed, Hassan, Z. S. Matar, M. Al-Dossari, A. F. Amin, N. S. Abd El-Gawaad, and Arafa H. Aly. "The Design and Optimization of an Anti-Reflection Coating and an Intermediate Reflective Layer to Enhance Tandem Solar Cell Photons Capture." Crystals 12, no. 1 (2021): 57. http://dx.doi.org/10.3390/cryst12010057.

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We have theoretically demonstrated an efficient way to improve the optical properties of an anti-reflection coating (ARC) and an intermediate reflective layer (IRL) to enhance tandem solar cell efficiency by localizing the incident photons’ energy on a suitable sub-cell. The optimum designed ARC from a one-dimensional ternary photonic crystal, consisting of a layer of silicon oxynitride (SiON), was immersed between two layers of (SiO2); thicknesses were chosen to be 98 nm, 48 nm, and 8 nm, respectively. The numerical results show the interesting transmission properties of the anti-reflection coating on the viable and near IR spectrum. The IRL was designed from one-dimensional binary photonic crystals and the constituent materials are Bi4Ge3O12 and μc-SiOx: H with refractive indexes was 2.05, and 2.8, respectively. The numbers of periods were set to 10. Thicknesses: d1 = 62 nm and d2 = 40 nm created a photonic bandgap (PBG) in the range of [420 nm: 540 nm]. By increasing the second material thickness to 55 nm, and 73 nm, the PBG shifted to longer wavelengths: [520 nm: 630 nm], and [620 nm: 730 nm], respectively. Thus, by stacking the three remaining structures, the PBG widened and extended from 400 nm to 730 nm. The current theoretical and simulation methods are based on the fundamentals of the transfer matrix method and finite difference time domain method.

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Schumann, Erik, René Hübner, Jörg Grenzer, Sibylle Gemming, and Matthias Krause. "Percolated Si:SiO2 Nanocomposites: Oven- vs. Millisecond Laser-Induced Crystallization of SiOx Thin Films." Nanomaterials 8, no. 7 (2018): 525. http://dx.doi.org/10.3390/nano8070525.

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Three-dimensional nanocomposite networks consisting of percolated Si nanowires in a SiO2 matrix, Si:SiO2, were studied. The structures were obtained by reactive ion beam sputter deposition of SiOx (x ≈ 0.6) thin films at 450 ∘C and subsequent crystallization using conventional oven, as well as millisecond line focus laser treatment. Rutherford backscattering spectrometry, Raman spectroscopy, X-ray diffraction, cross-sectional and energy-filtered transmission electron microscopy were applied for sample characterization. While oven treatment resulted in a mean Si wire diameter of 10 nm and a crystallinity of 72% within the Si volume, almost single-domain Si structures of 30 nm in diameter and almost free of amorphous Si were obtained by millisecond laser application. The structural differences are attributed to the different crystallization processes: conventional oven tempering proceeds via solid state and millisecond laser application via liquid phase crystallization of Si. The five orders of magnitude larger diffusion constant in the liquid phase is responsible for the three-times larger Si nanostructure diameter. In conclusion, laser treatment offers not only significantly shorter process times, but moreover, a superior structural order of nano-Si compared to conventional heating.

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Singh, Sarab Preet, and Pankaj Srivastava. "Recent Progress in the Understanding of Si-Nanostructures Formation in a-SiN_x:H Thin Film for Si-Based Optoelectronic Devices." Solid State Phenomena 171 (May 2011): 1–17. http://dx.doi.org/10.4028/www.scientific.net/ssp.171.1.

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There has been a rapidly increasing interest in the synthesis and characterization of Si- nanostructures embedded in a dielectric matrix, as it can lead to energy-efficient and cost-effective Complementary Metal-Oxide-Semiconductor (CMOS)-compatible Si-based light sources for optoelectronic integration. In the present contribution, first an overview of the SiOx as a dielectric matrix and its limitations are discussed. We then review the literature on hydrogenated amorphous silicon nitride (a-SiNx:H) as a dielectric matrix for Si-nanostructures, which have been carried out using silane (SiH4) and ammonia (NH3) as the reactant gases. Our studies demonstrate that the least amount of hydrogen in the as-deposited (ASD) a-SiNx:H films not only allows in-situ formation of Si-nanostructures but also stabilizes silicon nitride (Si3N4) phase. The recent advances made in controlling the shape and size of Si-nanostructures embedded in a-SiNx:H matrix by swift heavy ion (SHI) irradiation are briefly discussed.

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Melvin David Kumar, M., and Suganthi Devadason. "Quantum confinement effect in multilayer structure of alternate CdSe and SiOx insulator matrix thinfilms." Superlattices and Microstructures 58 (June 2013): 154–64. http://dx.doi.org/10.1016/j.spmi.2013.03.016.

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Ilday, Serim, Gizem Nogay, and Rasit Turan. "Spectroscopic ellipsometry study of Si nanocrystals embedded in a SiOx matrix: Modeling and optical characterization." Applied Surface Science 318 (November 2014): 256–61. http://dx.doi.org/10.1016/j.apsusc.2014.04.153.

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Chae, Somin, Hyung-kyu Lim, and Sangheon Lee. "Computation-Based Investigation of Motion and Dynamics of Lithium in Phase Separated Silicon-Oxide Anode Materials." ECS Meeting Abstracts MA2022-01, no. 55 (2022): 2269. http://dx.doi.org/10.1149/ma2022-01552269mtgabs.

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Si attracts significant attention as an alternative anode material to replace the conventional graphite anode in lithium-ion batteries (LIBs). Si offers extremely high theoretical energy-storage capacity of 4200 mAh/g for Li4.4Si, while the theoretical energy-storage capacity of graphite is only 372 mAh/g for Li/C6. In addition, Si is abundant, eco-friendly, and non-toxic, and it also has a safe thermodynamic potential with an average voltage of about 0.4 V vs. Li+/Li, making them attractive candidates for LIB anodes. However, the capacity of the Si anode exhibits a relatively high initial charge capacity and then rapidly decreases as the charge/discharge cycle proceeds, hampering its extensive application. This rapid performance degradation can be attributed to the poor connection between the active material and the current collector resulting from the severe volume expansion and contraction of the Si particles during the repeated charge and discharge cycles, respectively. Controlled addition of O to Si is often taken as a viable approach to utilize Si as an anode material. Silicon suboxides (SiOx, 0 < x < 2), compared with Si, offer a low energy capacity but a high stability against volume expansion. As a result, silicon monoxide (SiO) anodes are indeed commercialized by being blended with graphite. However, only low amounts (about 5 wt%) of SiO are blended with graphite because of the poor first cycle efficiency of SiO. During the charge process, SiOx reacts with Li and produces in-situ byproducts such as Li2O and Li-silicates, which are irreversible in following discharge cycles. This irreversible Li consumption is known to decrease the initial Coulombic efficiency (ICE) of SiO, typically below 75%. The low ICE of SiOx along with its inherently poor electronic conductivity leads to poor rate performance and increased capacity decay, hindering its substantial application in LIBs. To realize more extensive application of SiOx for LIB anodes, physical properties of SiOx should be improved in a direction to mitigate the low ICE issue. In this study, we investigate the motion and dynamics of a Li atom in SiOx by performing a series of first principles-based atomistic simulations. To this end, we perform Monte Carlo simulations within a continuous random network model to generate realistic SiOx structures with varying O-to-Si ratios. Then, we implement a density-functional theory calculation-based path sampling scheme to obtain detailed thermodynamic information when a Li atom penetrates a SiO matrix. Subsequent electronic structure analysis reveals that the thermodynamic stability of a Li atom is determined by local Si-O network environment surrounding Li. The identified thermodynamic information regarding the Li dynamics in SiO provides additional insight into the origin and solutions of the low ICE, highlighting the importance of controlling the SiO morphology during the synthesis of SiO. This fundamental understanding can be an important theoretical basis for developing practically applicable high-ICE silicon suboxide-based anode materials. Figure 1

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Evtukh, A., Oleg Bratus’, Volodymyr Ilchenko, Volodymyr Marin, and Iegor Vasyliev. "Capacitive Properties of MIS Structures with SiO_x and Si_xO_yN_z Films Containing Si Nanoclusters." Journal of Nano Research 39 (February 2016): 162–68. http://dx.doi.org/10.4028/www.scientific.net/jnanor.39.162.

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he negative differential capacity has been observed in case of MIS structures with SiOx and SixOyNz films containing Si nanoclusters. It has been shown that existence of negative differential capacity depends on charge state of Si nanoclusters or electron traps in the insulating matrix. In case of SixOyNz films the two peaks have been revealed in C-V characteristics connected with Si nanoclusters and electron traps. The low-temperature annealing of SixOyNz films in hydrogen passivates the electron traps caused by Si dangling bonds and as a result the peak in C-V characteristics connected with electron traps disappears. The following low-temperature annealing in vacuum caused the some effusion of hydrogen from the film and appearance of electron traps and connected with them capacity shoulder on C-V characteristics. It has been shown, that the frequency and temperature dependences of the negative differential capacitance in C-V curves can be successfully used for the determination of nanoclusters and traps parameters for the samples with the nanoclusters embedded in SiO2 or SixOyNz films.

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Trinh, Thanh Thuy, Chonghoon Shin, Cam Phu Thi Nguyen, et al. "Charge Storage Capabilities of (a/nc) Si Embedded in SiOx Matrix and the Influence of Tunneling Layer Thickness of SiO2/(a/nc)Si–SiOx/SiOxNy Stack on the Memory Performances of MIS Structure." Journal of Nanoscience and Nanotechnology 17, no. 5 (2017): 3210–16. http://dx.doi.org/10.1166/jnn.2017.14096.

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Rapp, Christin, Andreas Baumgärtel, Lucas Artmann, Markus Eblenkamp, and Syed Salman Asad. "Open air plasma deposited antimicrobial SiOx/TiOx composite films for biomedical applications." Current Directions in Biomedical Engineering 2, no. 1 (2016): 43–47. http://dx.doi.org/10.1515/cdbme-2016-0013.

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AbstractOpen air atmospheric pressure plasma jet (APPJ) enhanced chemical vapour deposition process was used to deposit biocompatible SiOx/TiOx composite coatings. The as deposited films are hydrophilic and show visible light induced photocatalytic effect, which is a consequence of the formation of defects in the TiOx structure due to the plasma process. This photocatalytic effect was verified by the demonstration of an antimicrobial effect under visible light on E. coli as well as by degradation of Rhodamine B. The films are non-cytotoxic as shown by the cytocompatibility tests. The films are conductive to cell growth and are stable in DMEM and isopropanol. The structural evaluation using SEM, EDS and XPS shows a dispersion of TiOx phase in a SiOxCyHz matrix. These analyses were used to correlate the structure-property relationship of the composite coating.

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Zhao, Jie, Hyun-Wook Lee, Jie Sun, et al. "Metallurgically lithiated SiOx anode with high capacity and ambient air compatibility." Proceedings of the National Academy of Sciences 113, no. 27 (2016): 7408–13. http://dx.doi.org/10.1073/pnas.1603810113.

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A common issue plaguing battery anodes is the large consumption of lithium in the initial cycle as a result of the formation of a solid electrolyte interphase followed by gradual loss in subsequent cycles. It presents a need for prelithiation to compensate for the loss. However, anode prelithiation faces the challenge of high chemical reactivity because of the low anode potential. Previous efforts have produced prelithiated Si nanoparticles with dry air stability, which cannot be stabilized under ambient air. Here, we developed a one-pot metallurgical process to synthesize LixSi/Li2O composites by using low-cost SiO or SiO2 as the starting material. The resulting composites consist of homogeneously dispersed LixSi nanodomains embedded in a highly crystalline Li2O matrix, providing the composite excellent stability even in ambient air with 40% relative humidity. The composites are readily mixed with various anode materials to achieve high first cycle Coulombic efficiency (CE) of >100% or serve as an excellent anode material by itself with stable cyclability and consistently high CEs (99.81% at the seventh cycle and ∼99.87% for subsequent cycles). Therefore, LixSi/Li2O composites achieved balanced reactivity and stability, promising a significant boost to lithium ion batteries.

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Ying, Zhifeng, Wentao Tang, Zhigao Hu, et al. "Annealing behaviors of structural, interfacial and optical properties of HfO2 thin films prepared by plasma assisted reactive pulsed laser deposition." Journal of Materials Research 25, no. 4 (2010): 680–86. http://dx.doi.org/10.1557/jmr.2010.0087.

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The structure and properties of HfO2 films deposited by plasma assisted reactive pulsed laser deposition and annealed in N2 were studied upon thermal annealing as well as the evaluation of thermal stability by Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and optical transmission measurements. The as-deposited HfO2 films appear predominantly monoclinic with an amorphous matrix which becomes crystallized after high-temperature annealing. No interfacial SiOx is observed for the as-deposited films on Si. The deposited HfO2 films exhibit good thermal stability and show excellent transparency in a wide spectral range with optical band gap energies of 5.65–5.73 eV depending on annealing temperature. An improvement in the optical properties by high-temperature annealing is also observed.

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Fang, Fang, Wei Zhang, Jian Sun, et al. "Evolution of photoluminescence from Si nanocrystals embedded in a SiO2 matrix prepared by reactive pulsed laser deposition." Journal of Materials Research 24, no. 7 (2009): 2259–67. http://dx.doi.org/10.1557/jmr.2009.0279.

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Photoluminescence (PL) properties of SiOx thin films deposited by pulsed laser ablation of Si in a reactive oxygen ambient and annealed in a nitrogen atmosphere were studied at room temperature. Raman spectroscopy, Fourier transform infrared spectroscopy, and optical transmission measurements were used to characterize the deposited films before and after annealing and complement the PL studies. Strong PL due to quantum confinement was observed at room temperature from Si nanocrystals with an average diameter of approximately 5 nm at 325-nm light excitation. An apparent dependence of PL on the oxygen pressure for film deposition was observed. A detailed analysis of the effects of the annealing temperature revealed a significant PL evolution in luminescence intensity, spectrum profile, peak position, and spectrum range with the annealing temperature ranging from 300 to 1200 °C. Structural variations induced by thermal annealing of the films deposited at different oxygen pressures were also discussed on the basis of their correlation with the PL evolution.

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Samanta, Arup, and Debajyoti Das. "Effect of RF power on the formation and size evolution of nC-Si quantum dots in an amorphous SiOx matrix." Journal of Materials Chemistry 21, no. 20 (2011): 7452. http://dx.doi.org/10.1039/c1jm10443h.

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Heo, Sung-Bo, Wang Ryeol Kim, Jun-Ho Kim, et al. "Effects of Copper Content on the Microstructural, Mechanical and Tribological Properties of TiAlSiN–Cu Superhard Nanocomposite Coatings." Coatings 12, no. 12 (2022): 1995. http://dx.doi.org/10.3390/coatings12121995.

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The effects of the Cu content on the microstructural, mechanical and tribological properties of the TiAlSiN–Cu coatings were investigated in an effort to improve the wear resistance with a good fracture toughness for cutting tool applications. A functionally graded TiAlSiN–Cu coating with various copper (Cu) contents was fabricated by a filtered cathodic arc ion plating technique using four different (Ti, TiAl2, Ti4Si, and Ti4Cu) targets in an argon-nitrogen atmosphere. The results showed that the TiAlSiN–Cu coatings are a nanocomposite consisting of (Ti,Al)N nano-crystallites (~5 to 7 nm) embedded in an amorphous matrix, which is a mixture of TiOx, AlOx, SiOx, SiNx, and CuOx phase. The addition of Cu atoms into the TiAlSiN coatings led to the formation of an amorphous copper oxide (CuOx) phase in the coatings. The maximum nanohardness (H) of ~46 GPa, H/E ratio of ~0.102, and adhesion bonding strength between coating and substrate of ~60 N (LC2) were obtained at a Cu content ranging from 1.02 to 2.92 at.% in the TiAlSiN–Cu coatings. The coating with the lowest friction coefficient and best wear resistance was also obtained at a Cu content of 2.92 at.%. The formation of the amorphous CuOx phase during coating growth or sliding test played a key role as a smooth solid-lubricant layer, and reduced the average friction coefficient (~0.46) and wear rate (~10 × 10−6 mm3/N·m).

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Das, Debajyoti, and Arup Samanta. "Quantum size effects on the optical properties of nc-Si QDs embedded in an a-SiOx matrix synthesized by spontaneous plasma processing." Physical Chemistry Chemical Physics 17, no. 7 (2015): 5063–71. http://dx.doi.org/10.1039/c4cp05126b.

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Terekhov, Vladimir A., Evgeny I. Terukov, Yury K. Undalov, et al. "Structural Rearrangement of a-SiOx:H Films with Pulse Photon Annealing." Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases 22, no. 4 (2020): 489–95. http://dx.doi.org/10.17308/kcmf.2020.22/3119.

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Amorphous SiOx films with silicon nanoclusters are a new interesting material from the standpoint of the physics, technology, and possible practical applications, since such films can exhibit photoluminescence due to size quantization. Moreover, the optical properties of these structures can be controlled by varying the size and the content of silicon nanoclusters in the SiOx film, as well as by transforming nanoclusters into nanocrystals by means of high-temperature annealing. However, during the annealing of nonstoichiometric silicon oxide, significant changes can occur in the phase composition and the structure of the films. The results of investigations on the crystallization of silicon nanoclusters in a SiOx matrix have shownthat, even a very fast method of annealing using PPA leads to the formation of large silicon crystallites. This also causes the crystallization of at least a part of the oxide phase in the form of silicon hydroxide H6O7Si2. Moreover, in films with an initial content of pure silicon nanoclusters ≤ 50%, during annealing a part of the silicon is spent on the formation of oxide, and part of it is spent on the formation of silicon crystals. While in a film with an initial concentration of silicon nanoclusters ≥ 53%, on the contrary, upon annealing, there occurs a partial transition of silicon from the oxide phase to the growth ofSi crystals     Reference 1. Undalov Y. K., Terukov E. I., Silicon nanoclustersncl-Si in a hydrogenated amorphous silicon suboxidematrix a-SiOx:H (0 < x < 2). Semiconductors. 2015;49(7):867- 878. DOI: https://doi.org/10.1134/S10637826150702222. Kim K. H., Johnson E. V., Kazanskii A. G.,Khenkin M. V., Roca P. Unravelling a simple methodfor the low temperature synthesis of siliconnanocrystals and monolithic nanocrystalline thinfilms. Scientific Reports. 2017;7(1) DOI: https://doi.org/10.1038/srep405533. Undalov Y. K., Terukov E. I., Trapeznikova I. N.Formation of ncl-Si in the amorphous matrix a-SiOx-:H located near the anode and on the cathode, usinga time-modulated DC plasma with the (SiH4–Ar–O2)gas phase (Co2 = 21.5 mol%). Semiconductors.2019;53(11): 1514–1523. DOI: https://doi.org/10.1134/S10637826191102284. Terekhov V. A., Terukov E. I., Undalov Y. K.,Parinova E. V., Spirin D. E., Seredin P. V., Minakov D. A.,Domashevskaya E. P. Composition and optical propertiesof amorphous a-SiOx:H films with silicon nanoclusters.Semiconductors. 2016;50(2): 212–216. DOI:https://doi.org/10.1134/S10637826160202515. Terekhov V. A., Turishchev S. Y., Kashkarov V. M.,Domashevskaya E. P., Mikhailov A. N., Tetel’baum D. I.Silicon nanocrystals in SiO2 matrix obtained by ionimplantation under cyclic dose accumulation. PhysicaE: Low-dimensional Systems and Nanostructures.2007;38(1-2): 16–20. DOI: https://doi.org/10.1016/j.physe.2006.12.0306. Terekhov V. A., Turishchev S. Y., Pankov K. N.,Zanin I. E., Domashevskaya E. P., Tetelbaum D. I.,Mikhailov A. N., Belov A. I., Nikolichev D. E., Zubkov S. Y.XANES, USXES and XPS investigations of electronenergy and atomic structure peculiarities of the siliconsuboxide thin film surface layers containing Si nanocrystals.Surface and Interface Analysis. 2010;42(6-7):891–896. DOI: https://doi.org/10.1002/sia.33387. Terekhov V. A., Turishchev S. Y., Pankov K. N.,Zanin I. E., Domashevskaya E. P., Tetelbaum, MikhailovA. N., Belov A. I., Nikolichev D. E. Synchrotron investigationsof electronic and atomic-structure peculiaritiesfor silicon-oxide films’ surface layers containingsilicon nanocrystals. Journal of Surface Investigation.X-ray, Synchrotron and Neutron Techniques. 2011;5(5):958–967. DOI: https://doi.org/10.1134/S102745101110020X8. Sato K., Izumi T., Iwase M., Show Y., Morisaki H.,Yaguchi T., Kamino T. Nucleation and growth of nanocrystallinesilicon studied by TEM, XPS and ESR.Applied Surface Science. 2003;216 (1-4): 376–381. DOI:https://doi.org/10.1016/S0169-4332(03)00445-89. Ledoux G., Gong J., Huisken F., Guillois O., ReynaudC. Photoluminescence of size-separated siliconnanocrystals: Confirmation of quantum confinement.Applied Physics Letters. 2002;80(25): 4834–4836. DOI:https://doi.org/10.1063/1.148530210. Patrone L., Nelson D., Safarov V. I., Sentis M.,Marine W., Giorgio S. Photoluminescence of siliconnanoclusters with reduced size dispersion producedby laser ablation. Journal of Applied Physics. 2000;87(8):3829–3837. DOI: https://doi.org/10.1063/1.37242111. Takeoka S., Fujii M., Hayashi S. Size-dependentphotoluminescence from surface-oxidized Si nanocrystalsin a weak confinement regime. Physical ReviewB. 2000;62(24): 16820–16825. DOI: https://doi.org/10.1103/PhysRevB.62.1682012. Ievlev V. M. Activation of solid-phase processesby radiation of gas-discharge lamps, Russian ChemicalReviews. 2013;82(9): 815–834. DOI: https://doi.org/10.1070/rc2013v082n09abeh00435713. Zimkina T. M., Fomichev V. A. Ultrasoft X-Rayspectroscopy. Leningrad: Leningrad State UniversityPubl.; 1971. 132 p.14. Wiech G., Feldhütter H. O., Šimůnek A. Electronicstructure of amorphous SiOx:H alloy filmsstudied by X-ray emission spectroscopy: Si K, Si L, andO K emission bands. Physical Review B. 1993;47(12):6981–6989. DOI: https://doi.org/10.1103/Phys-RevB.47.698115. Domashevskaya E. P., Peshkov Y. A., TerekhovV. A., Yurakov Y. A., Barkov K. A., Phase compositionof the buried silicon interlayers in the amorph o u s m u l t i l a y e r n a n o s t r u c t u r e s[(Co45Fe45Zr10)/a-Si:H]41 and [(Co45Fe45Zr10)35(Al2O3)65/a-Si:H]41. Surface and Interface Analysis.2018;50(12-13): 1265–1270. DOI: https://doi.org/10.1002/sia.651516. Terekhov V. A., Kashkarov V. M., ManukovskiiE. Yu., Schukarev A. V., Domashevskaya E. P.Determination of the phase composition of surfacelayers of porous silicon by ultrasoft X-ray spectroscopyand X-ray photoelectron spectroscopy techniques.Journal of Electron Spectroscopy and Related Phenomena.2001;114–116: 895–900. DOI: https://doi.org/10.1016/S0368-2048(00)00393-517. JCPDS-International Centre for DiffractionData ICDD PDF-2, (n.d.) card No 01-077-2110.18. JCPDS-International Centre for DiffractionData ICDD PDF-2, (n.d.) card No 00-050-0438.

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Handke, Miroslaw. "Vibrational Spectra, Force Constants, and Si-O Bond Character in Calcium Silicate Crystal Structure." Applied Spectroscopy 40, no. 6 (1986): 871–77. http://dx.doi.org/10.1366/0003702864508322.

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Vibrational spectroscopic methods were used to study the Si-O bond character in silicates with different complex anions and crystal structures. The following calcium silicates were examined: Ca,(SiO5), γ-Ca2(SiO4), β-Ca2(SiO4), Ca3(Si2O7), Ca(SiO3), and Ca(Si3O3). The band assignments in IR and Raman spectra of these compounds have been deduced mainly from 28Si−30Si and 40Ca−44Ca isotopic shifts. The GF matrix method and molecular approximation for force constant calculations in silicate anions were used. The Si-O bond parameters (bond order, charge distribution, and bond ionicity, etc.) were obtained from calculated force constants. The nature of Si-O bonds with respect to complex anion and crystal structure will be discussed.

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Matveeva, L. O., E. F. Venger, R. V. Konakova, O. Yu Kolyadina, P. L. Neluba, and V. V. Shynkarenko. "Effect of Microwave Radiation on the Band Structure and Electronic Parameters of the Heterosystems with Fullerenes." Фізика і хімія твердого тіла 18, no. 2 (2017): 173–79. http://dx.doi.org/10.15330/pcss.18.2.173-179.

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The results of a complex study of C60/Si heterosystems are presented in this work: the crystal structure and composition of the films, internal mechanical stresses, electronic parameters of the film and the film-substrate interface, and the effect of external influences (ultraviolet irradiation, thermal annealing, gamma and microwave irradiation). The advantage of microwave treatment over others is established: the absence of fullerene decomposition, the removal of internal mechanical stresses in the heterosystem, and the improvement of its electronic parameters. Methods for remove the decomposition of C60 molecules under the influence of other treatments have been developed. To eliminate the interaction of fullerenes with oxygen, it was proposed to perform thermal annealing and UV irradiation in vacuum, and in the case of g-irradiation, apply a protective coating on the surface of the film (GeOx or SiOx). In solar cells with C6 films in the polymer matrix on Si, a significant advantage of titanium contacts in comparison with gold is established, especially after microwave treatment. Contact resistance decreased as a result of hybridization of 3d-orbitals of titanium and 2p-orbitals of fullerenes with the formation of ТіхС60 carbides and radiation-stimulated diffusion of metals, which increases the contact area.

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Zhu, Min, Jie Yang, Zhihao Yu, Haibiao Chen, and Feng Pan. "Novel hybrid Si nanocrystals embedded in a conductive SiOx@C matrix from one single precursor as a high performance anode material for lithium-ion batteries." Journal of Materials Chemistry A 5, no. 15 (2017): 7026–34. http://dx.doi.org/10.1039/c7ta01254c.

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Lee, Dong Bok, and Seung Wan Woo. "Oxidation of SiOC Composite Having Dispersoids of Mo_4.8Si₃C_0.6 and MoSi₂." Materials Science Forum 486-487 (June 2005): 165–68. http://dx.doi.org/10.4028/www.scientific.net/msf.486-487.165.

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New ceramic composites that consist of the amorphous SiOC matrix having dispersoids of Mo4.8Si3C0.6 and some MoSi2 were synthesized, and their oxidation characteristics were investigated between 450 and 1050oC in air. The SiOC matrix was obtained by converting polymethylsiloxane via pyrolysis. The good oxidation resistance of the prepared composites originated from a thin, protective SiO2 layer formed on the surface. But the outermost oxide surface was porous, owing to the formation of the highly volatile MoO3, which was formed together with SiO2.

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Ложкина, Д. А., Е. В. Астрова та А. М. Румянцев. "Зависимость электрохимических параметров композитных SiO/C-анодов для литий-ионных аккумуляторов от состава и температуры синтеза". Журнал технической физики 92, № 3 (2022): 421. http://dx.doi.org/10.21883/jtf.2022.03.52137.267-21.

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The results of a study of anodes obtained by carbonization of silicon monoxide by means of a reaction with solid-phase fluorocarbon CF0.8 are presented. Charge/discharge voltage profiles were studied at different currents depending on the composition and temperature of the synthesis of composites. The irreversible losses of the 1st cycle and the contribution to them of intrinsic losses due to the formation of lithium oxide and its silicates and losses associated with the formation of SEI are analyzed. A difference has been established in the behavior of anodes made of SiO carbonized by annealing with CF0.8 at T=800°C (SiO/C composite) and silicon monoxide annealed with CF0.8 at T>1000°C, at which disproportionation occurs simultaneously with the carbonization of SiO (d-SiO/C composite). The difference consisting in a higher discharge capacity, a higher Coulomb efficiency, and better rate capability of d-SiO/C is explained by a change in the composition of the SiOx matrix that occurs during the disproportionation process. The effect of the formation of d-SiO/C anodes by preliminary lithiation with a low current, after which the electrodes can be charged and discharged with much higher currents, has been discovered. The effect is explained by the amorphization of silicon crystallites and the increasing diffusion coefficient of lithium

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Lozhkina D.A., Astrova E.V., and Rumyantsev A.M. "Dependence of the electrochemical parameters of composite SiO/C anodes for lithium-ion batteries on the composition and synthesis temperature." Technical Physics 92, no. 3 (2022): 339. http://dx.doi.org/10.21883/tp.2022.03.53264.267-21.

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The results of a study of anodes obtained by carbonization of silicon monoxide by means of a reaction with solid-phase fluorocarbon CF0.8 are presented. Charge/discharge voltage profiles were studied at different currents depending on the composition and temperature of the synthesis of composites. The irreversible losses of the 1st cycle and the contribution to them of intrinsic losses due to the formation of lithium oxide and its silicates and losses associated with the formation of SEI are analyzed. A difference has been established in the behavior of anodes made of SiO carbonized by annealing with CF0.8 at T=800oC (SiO/C composite) and silicon monoxide annealed with CF0.8 at T>1000oC at which disproportionation occurs simultaneously with the carbonization of SiO (d-SiO/C composite). The difference consisting in a higher discharge capacity, a higher Coulomb efficiency, and better rate capability of d-SiO/C is explained by a change in the composition of the SiOx matrix that occurs during the disproportionation process. The effect of the formation of d-SiO/C anodes by preliminary lithiation with a low current, after which the electrodes can be charged and discharged with much higher currents, has been discovered. The effect is explained by the amorphization of silicon crystallites and the increasing diffusion coefficient of lithium. Keywords: composite anodes SiO/C, lithium-ion batteries, disproportionation silicon monoxide, carbonization with fluorocarbon.

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Ryu, Sel Gi, Hyung Yong Ji, Myeong Jun Kim, Jong Hyeon Peck, and Keunjoo Kim. "Reduced Fresnel Reflection by Photon Tunneling in Antireflection Coating Layer of Crystalline Si Solar Cells." Journal of Nanoelectronics and Optoelectronics 13, no. 10 (2018): 1576–83. http://dx.doi.org/10.1166/jno.2018.2390.

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We investigated the light absorption of multi-antireflective layers on the microtextured surface of a crystalline silicon solar cell. Triple antireflection coating layers were deposited with SiNx/SiO2/SiNx thin films. A 20 nm SiO2 layer was sandwiched between two SiNx layers, forming a total thickness around 90 nm. Triple antireflection layers showed the enhanced light absorption in the infrared wavelength range, which is consistent with the Si energy band gap region. Further optical simulation on triple antireflection layers using a transfer matrix method showed similar reflection behavior to that of the experimental results. The SiO2 layer sandwiched between the SiNx thin films acts not only as the Fresnel reflection layer in the blue and UV spectral regions, but also as a photon tunneling layer in the infrared spectral region.

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Cui, Yi, Rong Lin Wang, Li Ren Wang, Jing Long Bu, and Qian Wang. "Effects of Recycling Ladle Lining Materials on Phase Composition and Microstructure of Al₂O₃-SiC-C Castable for Iron Runner." Advanced Materials Research 652-654 (January 2013): 1614–18. http://dx.doi.org/10.4028/www.scientific.net/amr.652-654.1614.

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In this experiment, preparation of samples were based on original ratio of bauxite matrix Al2O3-SiC-C castable for iron tap channel, and partial bauxites of size 8-5 mm, 5-3 mm, 3-1 mm and 2O3-MgO-C ladle bricks, respectively. Effects of recycling ladle lining materials on phase composition and microstructure of Al2O3-SiC-C castable for iron runner were investigated by XRD, SEM and EDS. The results showed that new phases SiO2 and (Mg0.804Ca0.196)3Al2(SiO4)3 were formed in the castable at 1450 oC in air atmosphere, and the spherical (Mg0.804Ca0.196)3Al2(SiO4)3 was formed on external surface of recycling Al2O3-MgO-C particle. thereinto, SiC oxidation to formed SiO2 with flow pattern character was key element of the phase (Mg0.804Ca0.196)3Al2(SiO4)3 formation. The more fine and uniform of recycling Al2O3-MgO-C particles, the more spherical (Mg0.804Ca0.196)3Al2(SiO4)3 was formed in recycling Al2O3-SiC-C castable. Internal structure of theirs samples exhibited looser state with content increasing of recycling ladle lining materials.

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Zhigunov, D. M., A. A. Popov, Yu M. Chesnokov, et al. "Near-IR Emitting Si Nanocrystals Fabricated by Thermal Annealing of SiNx/Si3N4 Multilayers." Applied Sciences 9, no. 22 (2019): 4725. http://dx.doi.org/10.3390/app9224725.

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Silicon nanocrystals in silicon nitride matrix are fabricated by thermal annealing of SiNx/Si3N4 multilayered thin films, and characterized by transmission electron microscopy, X-ray reflectivity and diffraction analysis, photoluminescence and X-ray photoelectron spectroscopy techniques. Si nanocrystals with a mean size of about 4 nm are obtained, and their properties are studied as a function of SiNx layer thickness (1.6–2 nm) and annealing temperature (900–1250 °C). The effect of coalescence of adjacent nanocrystals throughout the Si3N4 barrier layers is observed, which results in formation of distinct ellipsoidal-shaped nanocrystals. Complete intermixing of multilayered film accompanied by an increase of nanocrystal mean size for annealing temperature as high as 1250 °C is shown. Near-IR photoluminescence with the peak at around 1.3–1.4 eV is detected and associated with quantum confined excitons in Si nanocrystals: Photoluminescence maximum is red shifted upon an increase of nanocrystal mean size, while the measured decay time is of order of microsecond. The position of photoluminescence peak as compared to the one for Si nanocrystals in SiO2 matrix is discussed.

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Hou, Zhao Xia, Zhao Lu Xue, Shao Hong Wang, et al. "Transparent Oxyfluoride Glass-Ceramics Containing CaF₂ Nano-Crystalline Phase." Key Engineering Materials 512-515 (June 2012): 1015–18. http://dx.doi.org/10.4028/www.scientific.net/kem.512-515.1015.

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Transparent oxyfluoride tellurite glass with the composition of TeO2-SiO2-AlF3-CaO-KF system were prepared by conventional melting and annealing technique, and the transparent oxyfluoride glass-ceramics containing CaF2 nano-crystallines were obtained by controlled heat-treatment. The effect of heat-treatment schedules on the crystallization behavior and the microstructure of the glass-ceramics were analyzed by differential scanning caborimetry (DSC) analysis, X-ray diffraction (XRD) analysis, infrared (IR) spectrum and scanning electron microscopy (SEM). The sole CaF2 crystalline phase was confirmed by XRD, the spherical CaF2 nano-crystallines at about 20~100nm embed homogeneously among the glassy matrix after crystallization by SEM observation. The size of CaF2 grains grew with the increase of crystallization temperature and holding time. Te and Si atoms existed in [TeO3] and [SiO4] forms. Part of Al atoms existed in the form of [AlO4] and formed network together with [SiO4] tetrahedron. The other Al atoms acted as modifiers in the form of [AlO6]. The transmittance of glass-ceramics can reach 85% in visible light and 90% in infrared waveband. The novel transparent oxyfluoride tellurite glass-ceramics are excellent matrix materials in up-conversion luminescence field.

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Young, D., H. D. Wu, R. C. Y. Auyeung, et al. "Dielectric properties of oxide structures by a laser-based direct-writing method." Journal of Materials Research 16, no. 6 (2001): 1720–25. http://dx.doi.org/10.1557/jmr.2001.0237.

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Matrix-assisted pulsed laser evaporation direct-write (MAPLE-DW) is a laser-based method of directly writing mesoscopic patterns of electronic materials. Patterns of composite BaTiO3/SiO2/TiO2 dielectric material were written onto Pt/Au interdigitated-electrode test structures, with precise control over final dielectric properties. Scanning electron microscopy indicates random close-packed structures of BaTiO3 and SiO3 particles, with interstitial spaces partially filled with titania. Depending on the BaTiO3:silica ratio, the dielectric constant ranged from 5 to 55 and followed a 4-component logarithmic rule of mixing. This work demonstrates that the transfer process and the final material properties of MAPLE-DW oxide materials are largely decoupled.

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Li, Xian Xin, Ying Sun, Jia Lu Li, and Ming Ma. "Research Progress of SiO₂ Matrix Composite Materials for Radomes." Advanced Materials Research 430-432 (January 2012): 1119–22. http://dx.doi.org/10.4028/www.scientific.net/amr.430-432.1119.

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Silica（SiO2）matrix composite materials toughened by continuous fiber and fabric are the ideal materials for radomes, possessing many outstanding properties, for instance, high strength, excellent toughness and low density and so on. A comprehensive introduction is provided to the research and application of continuous fiber toughened SiO2 matrix composites, and some three dimensional configurations suitable for SiO2 matrix composites are mainly introduced. Combining with the future of the radome materials for missile, it is pointed out that SiO2 matrix composite materials toughed by continuous fiber or its three-dimensional fabric are the focus and development direction.

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