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Rozprawy doktorskie na temat „Surface passivation”

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Data publikacji: 4 czerwca 2021
Data aktualizacji: 25 lipca 2025

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1

Osorio, Ruy Sebastian Bonilla. "Surface passivation for silicon solar cells." Thesis, University of Oxford, 2015. https://ora.ox.ac.uk/objects/uuid:46ebd390-8c47-4e4b-8c26-e843e8c12cc4.

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Passivation of silicon surfaces remains a critical factor in achieving high conversion efficiency in solar cells, particularly in future generations of rear contact cells -the best performing cell geometry to date. In this thesis, passivation is characterised as either intrinsic or extrinsic, depending on the origin of the chemical and field effect passivation components in dielectric layers. Extrinsic passivation, obtained after film deposition or growth, has been shown to improve significantly the passivation quality of dielectric films. Record passivation has been achieved leading to surfac
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2

Chang, Wai-Kit. "Porous silicon surface passivation and optical properties." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/41426.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1996.<br>"June 1996."<br>Includes bibliographical references (leaves 84-85).<br>by Wai-Kit Chang.<br>S.M.
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Sun, Shiyu. "Germanium surface cleaning, passivation, and initial oxidation /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

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Michalak, David Jason Gray Harry B. "Physics and chemistry of silicon surface passivation /." Diss., Pasadena, Calif. : Caltech, 2006. http://resolver.caltech.edu/CaltechETD:etd-05082006-074414.

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Antu, Antara Debnath. "Morphology and Surface Passivation of Colloidal PbS Nanoribbons." Bowling Green State University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1499383746861722.

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Benrabah, Sabria. "Passivation des matériaux III-N de type GaN." Thesis, Lyon, 2021. http://www.theses.fr/2021LYSE1310.

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Pour répondre aux demandes de développement de nouveaux produits dans les domaines des convertisseurs électroniques de puissance pour les voitures électriques, des panneaux solaires, des éoliennes et des nouvelles technologies d'éclairage à base de LED ou de composants RF, la recherche s'est concentrée sur les matériaux à large bande interdite directe, dont le nitrure de gallium (GaN). Le GaN a suscité un grand intérêt en raison de ses propriétés exceptionnelles pour les dispositifs électroniques de puissance de la prochaine génération. Avec une vitesse de saturation élevée et une tension de f
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Flynn, Christopher Richard ARC Centre of Excellence in Advanced Silicon Photovoltaics &amp Photonics Faculty of Engineering UNSW. "Sputtering for silicon photovoltaics: from nanocrystals to surface passivation." Awarded by:University of New South Wales. ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, 2009. http://handle.unsw.edu.au/1959.4/44686.

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Deposition of thin material films by sputtering is an increasingly common process in the field of silicon (Si)-based photovoltaics. One of the recently developed sputter-deposited materials applicable to Si photovoltaics comprises Si nanocrystals (NCs) embedded in a Si-based dielectric. The particular case of Si nanocrystals in a Silicon Dioxide (SiO2) matrix was studied by fabricating metal-insulator-semiconductor (MIS) devices, in which the insulating layer consists of a single layer of Si NCs in SiO2 deposited by sputtering (Si:NC-MIS devices). These test structures were subjected to impeda
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8

Pereau, Alban Jean-Joel. "Rear surface passivation for high efficiency silicon solar cells." Thesis, Heriot-Watt University, 2013. http://hdl.handle.net/10399/2828.

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In order to adapt laser grooved buried contact (LGBC) solar cells to a thinner silicon substrate than usually used, we have investigated the reduction of charge carrier loss at the rear surface of p-type silicon wafers by plasma-enhanced chemical vapour deposition (PECVD) of a-Si:H and SiNx films. The efficiency of these passivating films has been measured via the surface recombination velocity (SRV) which is wanted as low as possible. The SRV values of our samples have been compared with the expected theoretical values given by the Shockley-Read Hall (SRH) recombination model. SRH theory is a
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9

Motahari, Sara. "Surface Passivation of CIGS Solar Cells by Atomic Layer Deposition." Thesis, KTH, Kraft- och värmeteknologi, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-127430.

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Thin film solar cells, such as Cu(In,Ga)Se2, have a large potential for cost reductions, due to their reduced material consumption. However, the lack in commercial success of thin film solar cells can be explained by lower efficiency compared to wafer-based solar cells. In this work, we have investigated the aluminum oxide as a passivation layer to reduce recombination losses in Cu(In,Ga)Se2 solar cells to increase their efficiency. Aluminum oxides have been deposited using spatial atomic layer deposition. Blistering caused by post-deposition annealing of thick enough alumina layer was suggest
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10

St-Arnaud, Ken. "Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau." Mémoire, Université de Sherbrooke, 2015. http://hdl.handle.net/11143/7723.

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Ce projet de recherche vise à caractériser l'influence de divers traitements de passivation de surface de l'arséniure de gallium (GaAs) sur les propriétés électriques et optiques de ce matériau. Les procédés de passivation étudiés sont les traitements au soufre (NH[indice inférieur 4])[indice inférieur 2]S et les dépôts de nitrure de silicium SiN[indice inférieur x] et trois types de substrat ont été utilisés à titre comparatif, un type N (10[indice supérieur 16]), un type N+ (10[indice supérieur 18]) et un non dopé. Dans ce dernier cas, un système de déposition chimique en phase vapeur assist
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11

Dahal, Arjun. "Surface Science Studies of Graphene Interfaces." Scholar Commons, 2015. http://scholarcommons.usf.edu/etd/5820.

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Interfaces between graphene and dissimilar materials are needed for making devices, but those interfaces also modify the graphene properties due to charge transfer and/or symmetry breaking. In this dissertation we investigate the technology of preparing graphene on different substrates and how the substrate influences the electronic properties of graphene. Synthesizing large area graphene on late transition metals by chemical vapor deposition is a promising approach for many applications of graphene. Among the transition metals, nickel has advantages because the good lattice match and strong i
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12

Ek, Anton. "Silicon surface passivation via ultra-thin SiO2, TiO2, and Al2O3 layers." Thesis, Luleå tekniska universitet, Institutionen för teknikvetenskap och matematik, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-75913.

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Energy traps at the silicon surface originating from discontinuities in the lattice is detrimental to the performance of solar cells. Acting as recombination centers, they offer a location where the charge carriers may easily return to their original energy band after excitation. Surface passivation is an effective method to combat this and can be done either by suppressing traps (lowering trap density) or by forming an electric field, preventing the carriers from reaching the defect states. Silicon oxide, SiO2, and aluminum oxide, Al2O3, are two materials which have previously been shown to p
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13

Qui, Jianhai. "A study by solution and surface analysis of passivation of stainless steel." Thesis, University of Surrey, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.328789.

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Bastola, Ebin. "CdTe Back Contact Engineering via Nanomaterials, Chemical Etching, Doping, and Surface Passivation." University of Toledo / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1596813646708798.

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15

Sorrenti, Estelle. "Étude de la passivation de la pyrite : chimie de surface et réactivité." Thesis, Vandoeuvre-les-Nancy, INPL, 2007. http://www.theses.fr/2007INPL054N/document.

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Afin de lutter contre les phénomènes de drainage minier acide DMA, nous avons étudié la possibilité de passivation/inertage de rejets miniers sulfurés. L'inhibition de l'oxydation superficielle de phases pyriteuses a été effectuée par adsorption de molécules: acide humique HA, thymol et silicate de sodium. L'étude fondamentale réalisée sur une pyrite pure (masse 1-5g) a ensuite été conduite à des rejets miniers (masse 2 kg). L’adsorption de molécules passivantes a été réalisée dans des conditions dynamiques (colonne chromatographique) et statiques (batch). L’ordre d’efficacité est: acide humiq
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16

Hofmann, Marc. "Rear surface conditioning and passivation for locally contacted crystalline silicon solar cells." München Verl. Dr. Hut, 2008. http://d-nb.info/992163250/04.

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17

Sorrenti, Estelle De Donato Philippe Gorner Tatiana. "Étude de la passivation de la pyrite chimie de surface et réactivité /." S. l. : INPL, 2007. http://www.scd.inpl-nancy.fr/theses/2007_SORRENTI_E.pdf.

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18

Brody, Jed. "Doping dependence of surface and bulk passivation of multicrystalline silicon solar cells." Diss., Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-04082004-180041/unrestricted/brody%5Fjed%5F200312%5Fphd.pdf.

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19

Lebreton, Fabien. "Silicon surface passivation properties of aluminum oxide grown by atomic layer deposition for low temperature solar cells processes." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLX109/document.

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Cette thèse se focalise sur les propriétés passivantes octroyées par des couches minces d’Al2O3 déposées par Atomic Layer Deposition (ALD) à partir de TMA et H2O pour les cellules photovoltaïques en silicium ayant des températures de fabrication inférieures à 400 °C. La première partie de ce travail de doctorat vise à identifier les mécanismes de formation des charges électrostatiques négatives présentes dans l’oxyde d’aluminium. Pour ce faire, les effets de l’illumination post-dépôt (à savoir le flux et l’énergie des photons), ainsi que la température du substrat ont été étudiés. Il a été con
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20

Ferré, Tomàs Rafel. "Surface passivation of crystalline silicon by amorphous silicon carbide films for photovoltaic applications." Doctoral thesis, Universitat Politècnica de Catalunya, 2008. http://hdl.handle.net/10803/6350.

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En aquesta tesi s'estudia la passivació del silici cristal·lí per a la producció de cèl·lules solars d'alta eficiència (> 20%) a baix preu.<br/>Actualment la indústria fotovoltaica empra capes de nitrur de silici crescut mitjançant la tècnica PECVD. Com a alternativa, es presenta el carbur de silici amorf (a-SiC), també crescut mitjançant PECVD. Resultats anteriors mostren que la passivacio del silici a partir de carbur de silici amorf son excel·lents quan el material és ric en silici i dopat amb fòsfor. L'alt contingut en silici provoca absorció de la llum a la capa, que no es tradueix en cor
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21

Ohno, Yutaka, Takeshi Nakao, Shigeru Kishimoto, Koichi Maezawa, and Takashi Mizutani. "Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors." American Institute of Physics, 2004. http://hdl.handle.net/2237/7005.

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22

Liu, Jian. "Passivation effects of surface iodine layer on tantalum for the electroless copper deposition." Thesis, University of North Texas, 2004. https://digital.library.unt.edu/ark:/67531/metadc5546/.

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The ability to passivate metallic surfaces under non-UHV conditions is not only of fundamental interests, but also of growing practical importance in catalysis and microelectronics. In this work, the passivation effect of a surface iodine layer on air-exposed Ta for the copper electroless deposition was investigated by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Although the passivation effect was seriously weakened by the prolonged air exposure, iodine passivates the Ta substrate under brief air exposure conditions so that enhanced copper wetting and adhesio
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23

Joel, Jonathan. "Characterization of Al2O3 as CIGS surface passivation layer in high-efficiency CIGS solar cells." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-230228.

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In this thesis, a novel method of reducing the rear surface recombination in copper indium gallium (di) selenide (CIGS) thin film solar cells, using atomic layer deposited (ALD) Al2O3, has been evaluated via qualitative opto-electrical characterization. The idea stems from the silicon (Si) industry, where rear surface passivation layers are used to boost the open-circuit voltage and, hence, the cell efficiency. To enable a qualitative assessment of the passivation effect, Al/Al2O3/CIGS metal-oxide-semiconductor (MOS) devices with 3-50 nm oxide thickness, some post-deposition treated (i.e. anne
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24

Chakroun, Ahmed. "Passivation de la surface du nitrure de gallium par dépôt PECVD d'oxyde de silicium." Thèse, Université de Sherbrooke, 2015. http://hdl.handle.net/11143/6735.

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Le nitrure de gallium (GaN) est un matériau semi-conducteur de la famille III-V à large bande interdite directe, ayant des propriétés électriques et thermiques intéressantes. Grâce à sa large bande interdite, son fort champ de claquage et sa forte vitesse de saturation, il est très convoité pour la réalisation de dispositifs électroniques de puissance et de hautes fréquences pouvant fonctionner à haute température. De plus, grâce au caractère direct de sa bande interdite et son pouvoir d’émission à faible longueur d’onde, il est aussi avantageux pour la réalisation de dispositifs optoélectroni
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Mondal, D. "Role of surface passivation and doping on the development of quantum dot solar cells." Thesis(Ph.D.), CSIR-National Chemical Laboratory, 2021. http://dspace.ncl.res.in:8080/xmlui/handle/20.500.12252/5988.

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The work in this thesis is focused on the use of advanced nanotechnology for the development of next-generation solar cells. Noble processes are developed to harness the unique optoelectronic properties of quantum dots to improve the performance of solar cells. This thesis explores the use of lead sulfide (PbS) quantum dots (QDs) as the main light-absorbing material for the development of QD solar cells. Near-infrared active and earth-abundant PbS QDs have emerged as a viable alternative to conventional materials (like Si solar cell, CIZS solar cell, etc.) due to their many distinct advantages
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Arnoult, Daniel. "Caractérisation in situ par ellipsométrie et photoluminescence de l'interaction de plasmas multipolaires d’hydrogène et d'azote avec la surface (100) de GaAS." Lyon, INSA, 1986. http://www.theses.fr/1986ISAL0032.

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Le dépôt d'une couche de diélectrique sur GaAs entraîne généralement une forte densité d'états d'interface. Ceci exclue par conséquent toute technologie M. I. S. (Métal-Isolant-Semiconducteur) et peut conduire à des effets parasites dans les M. E. S. F. E. T. (Transistors à effet de champ barriére Shottkyy) tels que des courants de fuite. L ' origine de ces états n'est pas clairement connue mais les défauts de stœchiométrie (antisites,Arsenic libre) jouent très certainement un rôle important. Pour remédier à ces problèmes nous avons utilisé un schéma de passivation faisant appel à des traiteme
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Crowe, Loretta L. "Reversible Attachment of Organic Dyes to Silica Surface Through Meijer-Type Hydrogen Bonding." Diss., Georgia Institute of Technology, 2006. http://hdl.handle.net/1853/14058.

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In an approach to creating molecular-scale structures on glass surfaces via self assembly, a strongly-dimerizing ureido-[2-(4-pyrimidone)] (UPy) quadruple hydrogen-bonding array was chemically immobilized on silica surfaces by way of a triethoxysilane functionality. The unreacted surface silanols were then thoroughly passivated with a monofunctional organosilane, resulting in isolated UPy binding sites on the glass surface. These binding sites were found to selectively bind the strongly fluorescent perylenediimide (PDI) functionalized UPy molecules from solution, thus non-covalently linking
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Hwang, Gyuweon. "Surface trap passivation and characterization of lead sulfide quantum dots for optical and electrical applications." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/98741.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2015.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 113-119).<br>Quantum dots (QDs) are semiconductor nanocrystals having a size comparable to or smaller than its exciton Bohr radius. The small size of QDs leads to the quantum confinement effects in their electronic structures. Their unique optical properties, including a tunable emission from UV to IR, make QDs attractive in optoelectronic applications. However, further improvements in device perform
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DELIDAIS, ISABELLE. "Defauts de volume et de surface dans le silicium pour applications photovoltaiques : microanalyse, proprietes, passivation." Paris 11, 1991. http://www.theses.fr/1991PA112295.

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Ce travail porte sur les comportements physico-chimiques et electriques de l'oxygene, de l'hydrogene et des impuretes metalliques, dans du silicium de type p pour applications photovoltaiques. La premiere partie concerne le travail theorique effectue sur la modelisation de l'efficacite de collecte mesuree par ebic. Dans une seconde partie, les analyses sims et l'utilisation d'un traceur (#1#8o) nous ont permis d'acceder aux coefficients de diffusion de l'oxygene, a 1000 et 800c, dans du silicium fz, cz et polyx et de mettre en evidence la presence d'oxygene largement au-dela de sa limite de so
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Narasimha, Shreesh. "Understanding and application of screen-printed metallization, aluminum back surface fields, and dielectric surface passivation for high-efficiency silicon solar cells." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/16453.

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Benhachoum, Mohamed. "Interaction d'ions multichargés avec des surfaces de diamant, de graphite et de silicium." Paris 6, 2004. http://www.theses.fr/2004PA066407.

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Lapeyrade, Mickael. "Utilisation des plasmas micro-ondes RCE pour préparer des films minces de nitrure de silicium : Application à la passivation des matériaux GaInAs et AlInAs." Ecully, Ecole centrale de Lyon, 1999. http://bibli.ec-lyon.fr/exl-doc/TH_T1801_mlapeyrade.pdf.

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Cette étude démontre la possibilité de déposer, à basse température (200-300°C) et avec une puissance micro-onde limitée (220 W), des films de nitrure de silicium de qualité électronique (résistivité de 1015 Q. Cm) avec des propriétés physico-chimiques proches du nitrure de silicium stœchiométrique élaboré à haute température, et qui soit compatible avec une technologie de passivation de matériaux III-V. Des mesures par sonde de Langmuir ont permis de caractériser le plasma d'azote dans les conditions expérimentales utilisées. Une étude approfondie des propriétés électriques, structurales et p
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Chave, Jacques. "Passivation de la surface de l'InP par des éléments de la colonne V pour structures MIS." Ecully, Ecole centrale de Lyon, 1987. http://www.theses.fr/1987ECDL0001.

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Burrows, Michael Z. "Role of silicon hydride bonding environment in alpha-silicon hydrogen films for c-silicon surface passivation /." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 152 p, 2008. http://proquest.umi.com/pqdweb?did=1654501711&sid=3&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Chave, Jacques. "Passivation de la surface de l'InP par des éléments de la colonne V pour structures MIS." Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37603864j.

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Michalak, David Jason. "Physics and Chemistry of Silicon Surface Passivation." Thesis, 2006. https://thesis.library.caltech.edu/1679/1/ThesisMasterFinal.pdf.

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<p>Low interfacial electron-hole recombination rates are essential for low-noise electronic devices and high-efficiency solar energy converters. This recombination rate is dependent on both the surface electrical trap state density, NT,s, and the surface concentrations of electrons, ns, and holes, ps. A reduction in NT,s is often accomplished through surface chemistry, and lower recombination rates, through lower NT,s values, have been demonstrated in this work for surfaces chemically treated to produce methoxylated, Si-O-CH3, overlayers. The H-Si(111) surfaces can react with methanol quickl
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37

Chen, Chang Ming, and 陳昶名. "Silicon Surface Passivation with ALD Al2O3 Dielectric Film." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/82076286337608288790.

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碩士<br>國立清華大學<br>材料科學工程學系<br>103<br>The surface to volume ratio is increasing due to the cost-driven reduction of the solar cell thickness thickness, which makes surface passivation a decisive factor for the final solar cell efficiency. Al2O3 have a high dielectric constant as a dielectric layer and have sufficient build-in nagative fixed oxide charge which generates an electric field. This field effect prevent the chances of minority carrier recombine at the surface which can greatly enhance the surface passivation. Meanwhile Atomic Layer Deposition (ALD) coating technology is developing rapid
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Lin, Tzung-Han, and 林宗翰. "Silicon nanoelectronic sensors with SAMs selective surface passivation." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/01757342341900179060.

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碩士<br>國立交通大學<br>材料科學與工程學系奈米科技碩博士班<br>101<br>In this study, selective ablation of self-assembly monolayer methoxy-poly (ethylene glycol) silane (MPEG-sil) and Octadecyltrichlorosilane (OTS) on silicon nanoelectronic devices by localize joule heating was demonstrated for biosensing application. Lightly doped region in a silicon nanoelectronic device is usually functioned as the active channel which is sensitive to the change of surface potential. And, the resistance of this region is higher compared to other regions in a device so that the electric power consumed. SAMs on lightly doped region we
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Tsai, Meng-Han, and 蔡孟翰. "Surface Passivation on N-type Silicon Solar Cells." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/41704707508113103834.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>100<br>Wafer based solar cell accounts for the production of a large part in photovoltaic industry due to its stability and high efficiency. Although the technology of wafer based solar cell has been well-developed for conventional structure, there are still numerous new challenges existing for the high efficiency solar cell. In this thesis, the fabrication process of n-type crystalline silicon solar cell is demonstrated by using ion implantation to form the boron (p+) emitter and phosphorous (n+) back surface field. By means of appropriate annealing, the implanted
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Lin, Cheng-Yu, and 林政宇. "Study and Analysis of Passivation on GaSb Surface." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/q786sh.

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童韻樺. "Silicon Surface Passivation with ALCVD HfO2 Dielectric Thin Film." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/25921892868614694052.

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Mitchell, Jonathon Drew. "Application of amorphous silicon for photovoltaic silicon surface passivation." Phd thesis, 2011. http://hdl.handle.net/1885/151789.

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In recent years, the application of hydrogenated amorphous silicon (a-Si:H) to crystalline silicon (c-Si) solar cells for the purpose of surface passivation has begun to move rapidly forward following early innovations by Sanyo. The bulk of the research conducted throughout this thesis has been performed prior to this new drive in the development of a-Si:H/c-Si devices. Understanding the underlying principles and the essential physics concerning the interaction of these two materials has been often overlooked, making further improvements difficult, and limiting new technological developments
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Tsu, Tsung Andrew Li. "Surface Passivation of Crystalline Silicon by Sputtered Aluminium Oxide." Phd thesis, 2010. http://hdl.handle.net/1885/7369.

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Efficient and inexpensive solar cells are necessary for photovoltaics to be widely adopted for mainstream electricity generation. For this to occur, the recombination losses of charge carriers (i.e. electrons or holes) must be minimised using a surface passivation technique suitable for manufacturing. In the literature, it has been shown that the aluminium oxide films are negatively charged dielectrics that provide excellent surface passivation of silicon solar cells. Meanwhile, sputtering has been shown to be an inexpensive thin film deposition method that is suitable for manufacturing. This
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Lunt, Sharon Ruth. "Electrochemical, photoluminescence, and surface studies of the passivation of surface recombination processes on chemically treated gallium arsenide surfaces." Thesis, 1992. https://thesis.library.caltech.edu/6643/1/Lunt_sr_1992.pdf.

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<p>This thesis describes work that has been done to study the chemical properties of GaAs surfaces relating to recombination processes. A variety of electrochemical, photoluminescence, and surface techniques have been used to study the mechanism an chemistry of the reduction of surface recombination in GaAs exposed to transition metal ions and complexes, and GaAs exposed to sulfur-containing molecules.</p> <p>Electrochemical studies done on polycrystalline n-GaAs/liquid junctions treated with a variety of transition metal ions to study the mechanism of the observed improvement in I-V proper
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Salivati, Navneethakrishnan. "Influence of surface passivation on the photoluminescence from silicon nanocrystals." Thesis, 2010. http://hdl.handle.net/2152/ETD-UT-2010-08-1533.

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Although silicon (Si) nanostructures exhibit size dependent light emission, which can be attributed to quantum confinement, the role of surface passivation is not yet fully understood. This understanding is central to the development of nanocrystal-based detectors. This study investigated the growth, surface chemistry, passivation with deuterium (D2), ammonia (ND3) and diborane (B2D6) and the resulting optical properties of Si nanostructures. Si nanocrystals less than 6 nm in diameter are grown on SiO2 surfaces in an ultra high vacuum chamber using hot-wire chemical vapor deposition and the as
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Wang, Chun-Miin, and 王純敏. "Research on surface passivation and surfurization of CuInSe2 thin films." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/36706426821116079044.

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碩士<br>國立中山大學<br>材料科學研究所<br>90<br>For improving the energy conversion efficiency of solar cells, it is essential to reduce the surface recombination velocity of CuInSe2 absorber layer. The use of quaternary alloys with an increasing band gap gradient was also demonstrated to be effectively increased the open-circuit voltage of the cells. The experiments using different concentration ammonium sulfur solutions to proceed surface passivation and sulfurization of CuInSe2 and CuInSe2：Sb films have been conducted to evaluate their influences on the band gap and other related properties. The band gaps
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Hsu, Chen-Wan, and 徐禎婉. "Surface Passivation of Silicon, Germanium, and Cu(In,Ga)Se2." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/86166572182604351320.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>98<br>In this thesis, surface passivation of silicon, photoluminescence of silicon and germanium with various passivation layers, and enhancement of photoluminescence from Cu(In,Ga)Se2 with Al2O3 passivation are discussed. The effective passivation needs low interface trap density at the interface between passivation layer and Si, and ionized charges for field effect passivation. The thermal oxide (SiO2) with low interface defect density seems most effective but requires high growth temperature (900 ℃). Al2O3 with trapped negative fixed charges can serve as the fiel
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Lan, Maw Shyan, and 藍茂賢. "Analysis of surface passivation with (NH4)2Sx treatment on In0.5Ga0.5P." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/28516837434204004624.

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Qiu, Xian-Cheng, and 邱顯丞. "The effect of microchannel surface passivation on polymerase chain reaction." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/92749640475149552504.

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碩士<br>國立屏東科技大學<br>生物機電工程系所<br>102<br>The polymerase chain reaction (PCR) is a technique that can duplicate specific DNA fragments, however, conducting the technique requires the use of a very large-scale thermal cycler. In order to accommodate for this problem, this study has developed a continuous flow PCR chip. Initially, CFD-ACE+TM commercial simulation software is used to simulate the impact that the three temperature zones configured in this paper have on the chip. After confirming the temperature distribution, microfuidic channels can be added to the simulations in order to investigate t
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Lee, Ken-Hsuan, and 李耿亘. "Surface Passivation of Germanium Wafers using Hydrogenated Amorphous Silicon Layers." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/66857266560171042056.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>102<br>In this paper, we studied several important issues concerning fabrication of crystalline germanium (Ge) hetero-junction using amorphous Si as the passivation layers. First of all, surface cleaning procedure of Ge wafers was established through a comparison with the conventional RCA cleaning procedure for Si wafers. An efficient way for surface cleaning of Ge included a series of organic solvents, HCl, and HF treatments with suitable concentrations. Then, a surface oxide layer was fabricated with intention through an immediate dipping in H2O2 solution after HF
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