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Artykuły w czasopismach na temat „Surface passivation”

Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 25 lipca 2025

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1

Tyagi, Pawan. "GaAs(100) Surface Passivation with Sulfide and Fluoride Ions." MRS Advances 2, no. 51 (2017): 2915–20. http://dx.doi.org/10.1557/adv.2017.380.

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ABSTRACTInteraction of GaAs with sulfur can be immensely beneficial in reducing the deleterious effect of surface states on recombination attributes. Bonding of sulfur on GaAs is also important for developing novel molecular devices and sensors, where a molecular channel can be connected to GaAs surface via thiol functional group. However, the primary challenge lies in increasing the stability and effectiveness of the sulfur passivated GaAs. We have investigated the effect of single and double step surface passivation of n-GaAs(100) by using the sulfide and fluoride ions. Our single-step passi

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Lee, Hayeon, and Dawen Li. "Surface Passivation to Improve the Performance of Perovskite Solar Cells." Energies 17, no. 21 (2024): 5282. http://dx.doi.org/10.3390/en17215282.

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Perovskite solar cells (PSCs) suffer from a quick efficiency drop after fabrication, partly due to surface defects, and efficiency can be further enhanced with the passivation of surface defects. Herein, surface passivation is reviewed as a method to improve both the stability and efficiency of PSCs, with an emphasis on the chemical mechanism of surface passivation. Various molecules are utilized as surface passivants, such as halides, Lewis acids and bases, amines (some result in low-dimensional perovskite), and polymers. Multifunctional molecules are a promising group of passivants, as they

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3

Kabalan, Amal. "A Comparative Study on the Effects of Passivation Methods on the Carrier Lifetime of RIE and MACE Silicon Micropillars." Applied Sciences 9, no. 9 (2019): 1804. http://dx.doi.org/10.3390/app9091804.

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Silicon micropillars have been suggested as one of the techniques for improving the efficiency of devices. Fabrication of micropillars has been done in several ways—Metal Assisted Chemical Etching (MACE) and Reactive Ion Etching (RIE) being the most popular techniques. These techniques include etching through the surface which results in surface damage that affects the carrier lifetime. This paper presents a study that compares the carrier lifetime of micropillars fabricated using RIE and MACE methods. It also looks at increasing carrier lifetime by surface treatment using three main approache

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Clerix, Jan-Willem J., Golnaz Dianat, Annelies Delabie, and Gregory N. Parsons. "In situ analysis of nucleation reactions during TiCl₄/H₂O atomic layer deposition on SiO₂ and H-terminated Si surfaces treated with a silane small molecule inhibitor." Journal of Vacuum Science & Technology A 41, no. 3 (2023): 032406. http://dx.doi.org/10.1116/6.0002493.

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Small-molecule inhibitors have recently been introduced for passivation during area-selective deposition (ASD). Small silanes like ( N, N-dimethylamino)trimethylsilane (DMATMS) selectively react with −OH sites on SiO2 to form a less reactive –OSi(CH3)3 terminated surface. The –OSi(CH3)3 surface termination can inhibit many atomic layer deposition (ALD) processes, including TiCl4/H2O ALD. However, the mechanisms by which ALD is inhibited and by which selectivity is eventually lost are not well understood. This study uses in situ Fourier-transform infrared spectroscopy to probe the adsorption of

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5

Jones, K. M., M. M. Al-Jassim, and B. L. Soport. "TEM investigation of hydrogen-implanted polycrystalline Si." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 868–69. http://dx.doi.org/10.1017/s0424820100088658.

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Hydrogen implantation for passivating grain boundaries and dislocations in polycrystalline silicon solar cells was studied by TEM and HREM. Back-surface passivation is being investigated because studies have shown that front-side passivation causes serious surface damage with resultant surface recombination velocities as high as 7 x 107 cm/sec. Front-side hydrogenation also restricts solar cell fabrication processes. Since the passivation of defects must occur within the entire volume of the cell, particular emphasis was placed on the depth distribution of hydrogen. The hydrogen implantation w

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6

Özeren, Mehmet Derya, Áron Pekker, Katalin Kamarás, and Bea Botka. "Evaluation of surface passivating solvents for single and mixed halide perovskites." RSC Advances 12, no. 44 (2022): 28853–61. http://dx.doi.org/10.1039/d2ra04278a.

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Various surface passivating solvents with different functional groups were used to investigate solvent–perovskite interactions. The identification of the underlying mechanisms provides insight for new surface passivation strategies.

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Vermang, Bart, Aude Rothschild, Karine Kenis, et al. "Surface Passivation for Si Solar Cells: A Combination of Advanced Surface Cleaning and Thermal Atomic Layer Deposition of Al₂O₃." Solid State Phenomena 187 (April 2012): 357–61. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.357.

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Thermal atomic layer deposition (ALD) of Al2O3 provides an adequate level of surface passivation for both p-type and n-type Si solar cells. To obtain the most qualitative and uniform surface passivation advanced cleaning development is required. The studied pre-deposition treatments include an HF (Si-H) or oxidizing (Si-OH) last step and finish with simple hot-air drying or more sophisticated Marangoni drying. To examine the quality and uniformity of surface passivation - after cleaning and Al2O3 deposition - carrier density imaging (CDI) and quasi-steady-state photo-conductance (QSSPC) are ap

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Sioncke, Sonja, Claudia Fleischmann, Dennis Lin, et al. "S-Passivation of the Ge Gate Stack Using (NH₄)₂S." Solid State Phenomena 187 (April 2012): 23–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.23.

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The last decennia, a lot of effort has been made to introduce new channel materials in a Si process flow. High mobility materials such as Ge need a good gate stack passivation in order to ensure optimal MOSFET operation. Several routes for passivating the Ge gate stack have been explored in the last years. We present here the S-passivation of the Ge gate stack: (NH4)2S is used to create a S-terminated Ge surface. In this paper the S-treatment is discussed. The S-terminated Ge surface is not chemically passive but can still react with air. After gate oxide deposition, the Ge-S bonds are preserv

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9

Rajesh, K., L. J. Huang, W. M. Lau, R. Bruce, S. Ingrey, and D. Landheer. "Modification of the GalnAsP(100) surface by oxidation and sulfur passivation." Canadian Journal of Physics 74, S1 (1996): 89–94. http://dx.doi.org/10.1139/p96-839.

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The quaternary III–V compound semiconductor (GaInAsP) is one of the important materials for optoelectronic devices such as long-wavelength semiconductor lasers. Understanding its surface chemistry, which is subjected to oxidation, and sulphur passivation, a widely used passivation technique, is of importance for its use for device fabrication. In this study, modification of the quaternary GaInAsP(100) surfaces was performed by UV/ozone and wet chemical oxidation, dilute HF etching, and sulfur passivation. The surface chemistry and composition of the oxidized, oxide-free, and the sulfur-passiva

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10

Szuromi, Phil. "Optimizing surface passivation." Science 366, no. 6472 (2019): 1467.5–1467. http://dx.doi.org/10.1126/science.366.6472.1467-e.

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Meiners, L. G., and H. H. Wieder. "Semiconductor surface passivation." Materials Science Reports 3, no. 3-4 (1988): 139–216. http://dx.doi.org/10.1016/s0920-2307(88)80008-2.

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Gaikwad, Pooja Vinod, Nazifa Rahman, Rooshi Parikh, Jalen Crespo, Zachary Cohen, and Ryan M. Williams. "Detection of the Inflammatory Cytokine IL-6 in Complex Human Serum Samples Via Rational Nanotube Surface Passivation Screening." ECS Meeting Abstracts MA2023-01, no. 9 (2023): 1124. http://dx.doi.org/10.1149/ma2023-0191124mtgabs.

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In recent years, biosensors have emerged as a tool with strong potential in medical diagnostics. Single-walled carbon nanotube (SWCNT) based optical nanosensors have notably garnered interest due to the unique characteristics of their near-infrared fluorescence emission, including tissue transparency, photostability, and various chiralities with discrete absorption and fluorescence emission bands. The optoelectronic properties of SWCNT are sensitive to the surrounding environment, which makes them suitable for highly selective biosensing. Single-stranded (ss) DNA-wrapped SWCNTs have been repor

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13

Birant, Gizem, Jorge Mafalda, Romain Scaffidi, et al. "Rear surface passivation of ultra-thin CIGS solar cells using atomic layer deposited HfOx." EPJ Photovoltaics 11 (2020): 10. http://dx.doi.org/10.1051/epjpv/2020007.

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In this work, hafnium oxide layer is investigated as rear surface passivation layer for ultra-thin (550 nm) CIGS solar cells. Point contact openings in the passivation layer are realized by spin-coating potassium fluoride prior to absorber layer growth. Contacts are formed during absorber layer growth and visualized with scanning electron microscopy (SEM). To assess the passivating qualities, HfOx was applied in a metal-insulator-semiconductor (MIS) structure, and it demonstrates a low interface trap density in combination with a negative density of charges. Since we used ultra-thin devices th

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14

Choi, Jea-Young. "Understanding of Molecular Contribution of Quinhydrone/Methanol Organic Passivation for Improved Minority Carrier Lifetime on Nanostructured Silicon Surface." Applied Sciences 9, no. 18 (2019): 3645. http://dx.doi.org/10.3390/app9183645.

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In this report, we present a study of the quinhydrone/methanol (QHY/MeOH) organic passivation technique for a silicon (Si) surface. The roles of p-benzoquinone (BQ) and hydroquinone (HQ), which make up QHY, in controlling the uniformity and coverage of the passivation layer as well as the minority carrier lifetime (τeff) of Si were investigated. The uniformity and coverage of the passivation layer after treatment with diverse mixture ratios of BQ and HQ in MeOH were studied with two different atomic force microscope (AFM) techniques, namely tunneling mode (TUNA) and high-resolution tapping mod

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15

Solcansky, M., J. Vanek, and A. Poruba. "Quinhydrone Chemical Passivation of a Silicon Surface for Minority Carrier Bulk-Lifetime Measurements." International Journal of Photoenergy 2012 (2012): 1–4. http://dx.doi.org/10.1155/2012/732647.

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For the measurement of the minority carrier bulk-lifetime the characterization method MW-PCD is used, where the result of measurement is the effective carrier lifetime, which is very dependent on the surface recombination velocity and therefore on the quality of a silicon surface passivation. This work deals with an examination of a different solution types for the chemical passivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose is to find optimal solution, which suits the requirements of a time stability and start-up v

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16

Liu, Xiaoliang, Qian Li, Yan Zhang, Yongbin Yang, Bin Xu, and Tao Jiang. "Formation Process of the Passivating Products from Arsenopyrite Bioleaching by Acidithiobacillus ferrooxidans in 9K Culture Medium." Metals 9, no. 12 (2019): 1320. http://dx.doi.org/10.3390/met9121320.

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Arsenopyrite is a common sulphide mineral occurring in deposits of gold ore that makes the extraction of gold difficult and, thus, pre-treatment is necessary prior to gold leaching. Bioleaching pre-treatment of arsenopyrite has drawn significant attention owing to its environmental friendliness, low cost and simple operation. A critical impedance of bioleaching to its large-scale industrial application is the slow leaching kinetics. Various passivating products on the surface of arsenopyrite have been found to limit the bioleaching process. This paper reports results from an in-depth investiga

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17

Lebedev M. V., Lvova T. V., Smirnov A. N., et al. "Correlation of the electronic and atomic structure at passivated n-InP(100) surfaces." Semiconductors 56, no. 7 (2022): 477. http://dx.doi.org/10.21883/sc.2022.07.54648.11.

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Photoluminescence, Raman spectroscopy and X-ray photoelectron spectroscopy are used to study electronic and atomic structure of n-InP(100) surfaces treated with different sulfide solutions. It is shown that the sulfide treatment causes removal of the native oxide layer from the semiconductor surface and formation of the passivating layer consisting of In-S chemical bonds with the structure dependent on the solution composition and atomic arrangement at the initial surface of the semiconductor. This is accompanied by an increase in photoluminescence intensity and narrowing of the surface deplet

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18

Chowdhury, Sanchari, Muhammad Quddammah Khokhar, Duy Phong Pham, and Junsin Yi. "Al₂O₃/MoO_x Hole-Selective Passivating Contact for Silicon Heterojunction Solar Cell." ECS Journal of Solid State Science and Technology 11, no. 1 (2022): 015004. http://dx.doi.org/10.1149/2162-8777/ac4d83.

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Carrier selective contact (CSC) layers have been extensively studied to realize high passivation effect in solar cells. Excellent passivation properties of Al2O3 and a-Si:H(i) as passivating interlayers between the hole-selective contact (HSC) MoOx and p-type c-Si wafer surface are reported herein. MoOx single layer exhibits a high work function value (≥5.0 eV), which can cause sufficient band bending in the band structure for HSC. An Al2O3/MoOx contact exhibits a significantly higher transmittance and surface passivation compared with that of an a-Si:H(i)/MoOx contact. The passivation results

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19

Perera, Yasiru Randika, Joanna Xiuzhu Xu, Dhanush L. Amarasekara, Alex C. Hughes, Ibraheem Abbood, and Nicholas C. Fitzkee. "Understanding the Adsorption of Peptides and Proteins onto PEGylated Gold Nanoparticles." Molecules 26, no. 19 (2021): 5788. http://dx.doi.org/10.3390/molecules26195788.

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Polyethylene glycol (PEG) surface conjugations are widely employed to render passivating properties to nanoparticles in biological applications. The benefits of surface passivation by PEG are reduced protein adsorption, diminished non-specific interactions, and improvement in pharmacokinetics. However, the limitations of PEG passivation remain an active area of research, and recent examples from the literature demonstrate how PEG passivation can fail. Here, we study the adsorption amount of biomolecules to PEGylated gold nanoparticles (AuNPs), focusing on how different protein properties influ

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20

Xiang, Yu Ren, Chun Lan Zhou, and Wen Jing Wang. "The Effect of Substrate Surface Condition on Atomic Layer Deposited Alumina Passivation Films." Key Engineering Materials 703 (August 2016): 230–34. http://dx.doi.org/10.4028/www.scientific.net/kem.703.230.

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Aluminum oxide (Al2O3) films have been wildly investigated due to the excellent surface passivation for the electrical device. Both hydrogen-terminated and pre-oxidized silicon surfaces were prepared before Al2O3 films deposition. Combining chemical environment analysis with the effective minority lifetime data, the effect of the surface conditions on the Al2O3 films passivation was discussed. The HF sample with hydrogen-terminated substrate surface had a higher minority carrier lifetime (about 721 μs) than the H2SO4+H2O2 sample with pre-oxidized substrate surface (about 631 μs). The H atoms p

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21

Ghandi, Reza, Martin Domeij, Romain Esteve, et al. "Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs." Materials Science Forum 645-648 (April 2010): 661–64. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.661.

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In this work, the electrical performance in terms of maximum current gain, ON-resistance and blocking capability has been compared for 4H-SiC BJTs passivated with different surface passivation layers. Variation in BJT performance has been correlated to densities of interface traps and fixed oxide charge, as evaluated through MOS capacitors. Six different methods were used to fabricate SiO2 surface passivation on BJT samples from the same wafer. The highest current gain was obtained for PECVD deposited SiO2 which was annealed in N2O ambient at 1100 °C during 3 hours. Variations in breakdown vol

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22

Barek, Jiri. "How to Improve the Performance of Electrochemical Sensors via Minimization of Electrode Passivation." Chemosensors 9, no. 1 (2021): 12. http://dx.doi.org/10.3390/chemosensors9010012.

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It follows from critical evaluation of possibilities and limitations of modern voltammetric/amperometric methods that one of the biggest obstacles in their practical applications in real sample analysis is connected with electrode passivation/fouling by electrode reaction products and/or matrix components. This review summarizes possibilities how to minimise these problems in the field of detection of small organic molecules and critically compares their potential and acceptability in practical laboratories. Attention is focused on simple and fast electrode surface renewal, the use of disposab

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Кукушкин, С. А., И. П. Калинкин та А. В. Осипов. "Влияние химической подготовки поверхности кремния на качество и структуру эпитаксиальных пленок карбида кремния, синтезированных методом замещения атомов". Физика и техника полупроводников 52, № 6 (2018): 656. http://dx.doi.org/10.21883/ftp.2018.06.45932.8758.

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AbstractThe fundamentals of a new technique for the cleaning and passivation of (111), (110), and (100) silicon wafer surfaces by hydride groups, which ensure a high surface purity and smoothness at the nanoscale upon long-term storage of the wafers at room temperature in air, are discussed. A new composition of the passivation solution for the long-term antioxidation protection of silicon surfaces is developed. The proposed solution is suitable for the long-term storage and repeated passivation of silicon wafers. The composition of the passivation solution and the conditions of passivation of

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Zhang, Jun, Wei Ming Lu, Chun Lan Zhou, et al. "Excellent Surface Passivation by Silicon Dioxide Grown with a Electrochemical Method." Materials Science Forum 685 (June 2011): 48–54. http://dx.doi.org/10.4028/www.scientific.net/msf.685.48.

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A novel method to grow silicon dioxide layers for passivating the silicon surface is given more attention. SiO2was grown by applying a positive voltage across silicon wafers in a nitric acid solution at low temperature. After annealing in N2media at 900°C for 20min, excellent surface passivation was achieved. The maximum effective lifetime of the silicon arrived at 29.8μs and 29.75μs, which was three times the value of silicon without passivation. The effective lifetime of other types of silicon could be ten times the initial value without the silicon dioxide. A comparison study of the effect

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Abbas, Mahmoud, M. A. Shahin, Mohamed M. I. Ahmed, and Magdy Kasem. "Passivation of Recirculating Open Water Cooling Systems Using New Organic Passivator." Journal of University of Shanghai for Science and Technology 23, no. 12 (2021): 375–86. http://dx.doi.org/10.51201/jusst/21/121028.

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It is well know that recirculating open cooling water system at metal/ water surface contact appear frequent corrosion products, like scales, foaling and material losses which are have great effect on cooling process. Passivation helps to maintain clean heat transfer surface by inhibiting oxides scales through creating outer passive layer. Passivators are substances which usually have a sufficiently high equilibrium potential and sufficiently low over potential decrease corrosion rate on attainment of passivity. One of the most popular passivator is organic phosphate Phosphinosuccinic oligomer

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Zhao, Yang, Yuchen Liu, Xin Gai, et al. "Investigating the Stress Corrosion Cracking (SCC) Susceptibility of Ti-6Al-4V Alloys Fabricated by Electron Beam Melting in Deep-Sea Environment." Corrosion 77, no. 8 (2021): 853–65. http://dx.doi.org/10.5006/3822.

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The stress corrosion cracking (SCC) susceptibility of electron beam melted Ti-6Al-4V alloy (ET) was compared with the conventional wrought alloy (WT). The electrochemical and slow strain rate tensile (SSRT) tests, as well as surface analysis, were conducted under simulated shallow and deep-sea environment. Under shallow conditions, the SCC susceptibility of both alloys was almost the same because of consistent passivation and repassivation performance of the passivating film. However, under deep-sea conditions, SCC susceptibility of ET was higher than that of WT due to stronger textured-like s

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Palais, Olivier, Mustapha Lemiti, Jean-Francois Lelievre, and Santo Martinuzzi. "Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon." Solid State Phenomena 108-109 (December 2005): 585–90. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.585.

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In this work the efficiencies of different surface passivation techniques are compared. This paper emphasizes on the passivation provided by SiNx:H layers that is commonly used in photovolaic industry as surface passivation and anti reflection layer. The method used to evaluate the surface recombination velocity is detailed and discussed. It is shown that light phosphorus diffusion at 850°C – 20 min provides good surface passivation of n-type silicon surface and noticeable passivation of p-type, that can be improved by SiNx:H Layer.

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Lee, H. H., R. J. Racicot, and S. H. Lee. "Surface passivation of GaAs." Applied Physics Letters 54, no. 8 (1989): 724–26. http://dx.doi.org/10.1063/1.100873.

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Lu, Haizhou, Huotian Zhang, Sijian Yuan, Jiao Wang, Yiqiang Zhan, and Lirong Zheng. "An optical dynamic study of MAPbBr3 single crystals passivated with MAPbCl3/I3-MAPbBr3 heterojunctions." Physical Chemistry Chemical Physics 19, no. 6 (2017): 4516–21. http://dx.doi.org/10.1039/c6cp07182a.

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Shi, Jingying, Xuefei Zhao, and Can Li. "Surface Passivation Engineering for Photoelectrochemical Water Splitting." Catalysts 13, no. 2 (2023): 217. http://dx.doi.org/10.3390/catal13020217.

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Surface passivation engineering is an imperative way to improve photoelectrode performance for photoelectrochemical (PEC) water splitting. To the best of our knowledge, it has never been systematically reviewed in a feature article. In this review, we summarize various passivation materials and their preparation, characterizations by PEC measurements and some related spectral technologies. We highlight the features of the passivation effect that separate it from other modifications, such as cocatalyst decoration, and we demonstrate significant progress in combining surface passivation engineer

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Cuevas, Jose Luis, Miguel Ojeda Martinez, and Saravana Prakash Thirumuruganandham. "Band-Gap Engineering: Lithium Effect on the Electronic Properties of Hydrogenated 3C-SiC (1 1 0) Surfaces." Batteries 8, no. 11 (2022): 247. http://dx.doi.org/10.3390/batteries8110247.

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Silicon carbide has structural strength, high electronic conductivity, low diffusion barrier and high storage capacity, which are suitable for engineering applications such as lithium-ion batteries, electric vehicles, uninterruptible power supplies and SiC diodes. In particular, 3C-SiC monolayers oriented along the (1 1 0) crystallographic direction that could have symmetric surfaces have been poorly studied, as have the effects of surface passivation on their physical and electronic properties. In this work, we investigate the influence of lithium on the electronic properties of hydrogenated

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Sundarapura, Panus, Xiao-Mei Zhang, Ryoji Yogai, Kazuki Murakami, Alain Fave, and Manabu Ihara. "Nanostructure of Porous Si and Anodic SiO2 Surface Passivation for Improved Efficiency Porous Si Solar Cells." Nanomaterials 11, no. 2 (2021): 459. http://dx.doi.org/10.3390/nano11020459.

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The photovoltaic effect in the anodic formation of silicon dioxide (SiO2) on porous silicon (PS) surfaces was investigated toward developing a potential passivation technique to achieve high efficiency nanostructured Si solar cells. The PS layers were prepared by electrochemical anodization in hydrofluoric acid (HF) containing electrolyte. An anodic SiO2 layer was formed on the PS surface via a bottom-up anodization mechanism in HCl/H2O solution at room temperature. The thickness of the oxide layer for surface passivation was precisely controlled by adjusting the anodizing current density and

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Anas, Muhammad Mus-'ab, and Geri Gopir. "Surface Passivation Effect of Hydrogen and Methyl on the Structural and Electronic Properties of Silicon Quantum Dots: Density Functional Calculation." Materials Science Forum 846 (March 2016): 375–82. http://dx.doi.org/10.4028/www.scientific.net/msf.846.375.

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We have carried out a series of DFT calculations to investigate changes on the structural and electronic properties of Silicon (Si) quantum dots as a function of surface passivation. In particular, we have study non-polar passivation effect of hydrogen (H) and methyl (CH3) at the surface of quantum dots. From geometry optimization result, we find that clusters with reconstructed surfaces a complete methyl passivation is possible and steric repulsion prevents full passivation of Si dots with unreconstructed surfaces. On the electronic properties point of view, it is noticed for small nanocrysta

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Mathew, Varughese, Sheila Chopin, Trent Uehling, and Ruzaini Ibrahim. "Mold Compound Adhesion Reliability with SiN and SiON Passivation." International Symposium on Microelectronics 2011, no. 1 (2011): 000729–34. http://dx.doi.org/10.4071/isom-2011-wp2-paper6.

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Delamination of mold compounds under thermal stress conditions such as Air-to-Air Temperature Cycling (AATC) (−55°C −125° C) was studied for two passivation surfaces; SiN and SiON using C-Mode Scanning Acoustic Microscope (CSAM) and electrical testing for different intervals up to 2000 cycles. Both passivation surfaces were treated with oxygen-argon plasma prior to the molding process. It is found that SiN surface performed better than SiON electrically and without showing any delamination for the mold compound studied. Both passivation surfaces were analyzed for various surface groups by TOF-

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Niikura, Chisato, Yuta Shiratori, and Shinsuke Miyajima. "Si surface passivation by using triode-type plasma-enhanced chemical vapor deposition with thermally energized film-precursors." European Physical Journal Applied Physics 89, no. 1 (2020): 10101. http://dx.doi.org/10.1051/epjap/2020190299.

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We fabricated hydrogenated amorphous Si (a-Si:H) passivation layers on the surfaces of Si wafers by using triode-type plasma-enhanced chemical vapor deposition with gas-heating, and discussed high-quality surface passivation for Si heterojunction solar cells. The sample with the a-Si:H layers corresponding to the highest proportion of SiHx(x=2,3) content in SiHx(x=1–3) content exhibited the minimum surface recombination velocity (S) after annealing. This suggests that using SiHx(x=2,3)-rich a-Si:H grown at low-temperature as a passivation layer is advantageous to inhibit an epitaxial growth at

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36

Jha, Rajesh Kumar, Prashant Singh, Manish Goswami, and B. R. Singh. "Impact of HfO2 as a Passivation Layer in the Solar Cell Efficiency Enhancement in Passivated Emitter Rear Cell Type." Journal of Nanoscience and Nanotechnology 20, no. 6 (2020): 3718–23. http://dx.doi.org/10.1166/jnn.2020.17510.

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We report the simulation of high-efficiency c-silicon Passivated Emitter Rear Contact (PERC) type solar cell structure with rear side passivated with HfO2 as a passivating material. Variation in the half length of pyramid has been carried out to investigate its effect on the solar cell electrical characteristics such as fill factor (FF), open circuit voltage (Voc) and efficiency. Aluminum back Surface Field (Al-BSF) and PERC type solar cell with Al2O3 passivation layer structures were also modeled for comparison. Effect of variation in passivation layer (HfO2) thickness (10 and 15 nm) and perm

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37

Guilherme, Luis Henrique, Cecilio Sadao Fugivara, and Assis Vicente Benedetti. "On-site weld quality assessment and qualification for stainless steels tanks." Ecl�tica Qu�mica Journal 47, no. 3 (2022): 55–65. http://dx.doi.org/10.26850/1678-4618eqj.v47.3.2022.p55-65.

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Stainless steel tanks are frequently degraded by localized corrosion in bioprocess industries. A case study of 2101 duplex stainless steel tank allowed to apply a portable electrochemical microcell system (PassivityScan) for on-site weld inspection and corrosion monitoring from the manufacturing until 12 months of operation. During the tank manufacturing, the double loop electrochemical potentiokinetic reactivation technique was applied to measure the sensitization degree on the welded regions. The manufactured tank was submitted to the passivation treatment to improve the passivation properti

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Kim, Joo-Wan, Tae-Wan Kim, Sungjune Lee, et al. "Effects of Steaming and SiO2 Surface Passivation on SSZ-13 Zeolites in the Ethylene to Propylene Reaction." Journal of Nanoscience and Nanotechnology 20, no. 9 (2020): 5783–86. http://dx.doi.org/10.1166/jnn.2020.17644.

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SSZ-13 zeolite was modified by two kinds of post-treatment methods such as steaming and SiO2 surface passivation (silylation) for ETP catalyst with high activity. The former steaming treatment was conducted in the range of 400–700 °C, whereas the latter surfaces passivation was applied to a chemical liquid deposition (CLD) technique that uses various silylation agents such as tetramethylorthosilicate (TMOS), tetraethylorthosilicate (TEOS), and tetrabuthylorthosilicate (TBOS). Catalysts were characterized by powder-XRD, ICP, Ar-phsisorption, solid-state 27Al MAS NMR, and NH3-TPD, and their acti

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Cruz, Nuno, Javier Gil, Miquel Punset, et al. "Relevant Aspects of Piranha Passivation in Ti6Al4V Alloy Dental Meshes." Coatings 12, no. 2 (2022): 154. http://dx.doi.org/10.3390/coatings12020154.

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Passivation of titanium alloy dental meshes cleans their surface and forms a thin layer of protective oxide (TiO2) on the surface of the material to improve resistance to corrosion and prevent release of ions to the physiological environment. The most common chemical agent for the passivation process of titanium meshes is hydrochloric acid (HCl). In this work, we introduce the use of Piranha solution (H2SO4 and H2O2) as a passivating and bactericidal agent for metallic dental meshes. Meshes of grade 5 titanium alloy (Ti6Al4V) were tested after different treatments: as-received control (Ctr), p

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40

Cao, Fan, Peng Cao, Yangyang Li, Yi Wang, Lei Shi, and Di Wu. "Inhibition of Surface Corrosion Behavior of Zinc-Iron Alloy by Silicate Passivation." Coatings 13, no. 6 (2023): 1057. http://dx.doi.org/10.3390/coatings13061057.

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The passivation of zinc alloy coating was achieved through the utilization of both silicate and trivalent chromium passivation systems, employing a specific process formula consisting of Co(NO3)2 at a concentration of 2.5 g/L, C76H52O46 at 3 mL/L, Na2SiO3 at 25 g/L, C6H5Na3O7 at 15 g/L, and an appropriate amount of organic accelerator. The composite passivation of silicate and tannic acid was found to be more effective than the trivalent chromium passivation film, as it successfully eliminated the dendrite structure on the coating surface and reduced surface defects. The coordination between n

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Calvino, M., A. Trejo, M. I. Iturrios, M. C. Crisóstomo, Eliel Carvajal, and M. Cruz-Irisson. "DFT Study of the Electronic Structure of Cubic-SiC Nanopores with a C-Terminated Surface." Journal of Nanomaterials 2014 (2014): 1–7. http://dx.doi.org/10.1155/2014/471351.

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A study of the dependence of the electronic structure and energetic stability on the chemical surface passivation of cubic porous silicon carbide (pSiC) was performed using density functional theory (DFT) and the supercell technique. The pores were modeled by removing atoms in the [001] direction to produce a surface chemistry composed of only carbon atoms (C-phase). Changes in the electronic states of the porous structures were studied by using different passivation schemes: one with hydrogen (H) atoms and the others gradually replacing pairs of H atoms with oxygen (O) atoms, fluorine (F) ato

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Fan, Lijun, Tiancheng Han, Xianxing Huang, et al. "A Novel Surface Passivation Method of Pyrite within Rocks in Underwater Environments to Mitigate Acid Mine Drainage at Its Source." Minerals 14, no. 10 (2024): 973. http://dx.doi.org/10.3390/min14100973.

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Mitigating acid mine drainage (AMD) at its source, specifically within rocks containing pyrite in underwater environments, poses a significant environmental challenge worldwide. Existing passivation techniques are primarily designed for open-air conditions, involving direct contact with coating materials at a solid–liquid interface, making them ineffective beneath a water barrier. In this study, we introduce a novel passivation method inspired by the design of underwater bio-adhesives. Tannic acid (TA) combined with polyethylene glycol (PEG) was employed to form a hydrophobic film directly on

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Hu, Xiaochen, Pei Zhang, Yong Zhou, and Fuan Yan. "The electrochemical behavior of corrosion and passivation for Q235 carbon steel in acidic phosphate buffer solutions without and with NO2−." Anti-Corrosion Methods and Materials 67, no. 5 (2020): 473–81. http://dx.doi.org/10.1108/acmm-03-2020-2285.

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Purpose The purpose of this paper is to reveal the mechanism of nitrite (NO2−) for the surface passivation of carbon steels in acidic environments through investigating the influences of 0.01 mol/L NaNO2 addition on the corrosion and passivation behaviors of Q235 carbon steel in acidic phosphate buffer (APB) solutions (pH 2 to 6). Design/methodology/approach The electrochemical techniques including open circle potential evolution, potentiodynamic polarization, electrochemical impedance spectroscopy and cyclic voltammetry were applied. Findings In APB solutions without NO2−, the Q235 steel pres

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McBrayer, Josefine, Katharine L. Harrison, Kyle Fenton, and Shelley Minteer. "SECM as a Direct Method to Track Changes in Silicon Passivation." ECS Meeting Abstracts MA2023-01, no. 2 (2023): 514. http://dx.doi.org/10.1149/ma2023-012514mtgabs.

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Silicon is a promising next-generation anode to increase energy density over current state of the art graphite anodes. Despite much progress in improving the cycling of silicon electrodes, the calendar life is still problematic. In this work, scanning electrochemical microscopy (SECM) was used to track the reactivity of the surface of a silicon thin film over time to better understand the role of the solid electrolyte interphase (SEI) during calendar aging. The passivation of silicon was found to decrease with increasing time and potential relative to Li/Li+. Along with the decrease in passiva

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Ghoshal, Sib Krishna, M. R. Sahar, R. Arifin, M. S. Rohani, and K. Hamzah. "Surface States and Band Gap Correlation in Silicon Nanoclusters." Advanced Materials Research 1107 (June 2015): 308–13. http://dx.doi.org/10.4028/www.scientific.net/amr.1107.308.

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Tuning the visible emission of Si nanomaterials by modifying their size and shape is one of the key issue in optoelectronics. The observed optical gain in Si-nanoclusters (NCs) has given further impulse to nanosilicon research. We develop a phenomenological model by combining the effects of surface passivation, exciton states and quantum confinement (QC). The size and passivation dependent band gap, oscillator strength, radiative lifetime and photoluminescence (PL) intensity for NCs with diameter ranging from 1.0 to 6.0 nm are presented. By controlling a set of fitting parameters, it is possib

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Hyun, Ji Yeon, Soohyun Bae, Yoon Chung Nam, et al. "Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells." Sustainability 11, no. 14 (2019): 3784. http://dx.doi.org/10.3390/su11143784.

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Al2O3/SiNx stack passivation layers are among the most popular layers used for commercial silicon solar cells. In particular, aluminum oxide has a high negative charge, while the SiNx film is known to supply hydrogen as well as impart antireflective properties. Although there are many experimental results that show that the passivation characteristics are lowered by using the stack passivation layer, the cause of the passivation is not yet understood. In this study, we investigated the passivation characteristics of Al2O3/SiNx stack layers. To identify the hydrogenation effect, we analyzed the

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Chen, Siming, Luping Tao, Libin Zeng, and Ruijiang Hong. "RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers." International Journal of Photoenergy 2013 (2013): 1–5. http://dx.doi.org/10.1155/2013/792357.

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Aluminum oxide films were deposited on crystalline silicon substrates by reactive RF magnetron sputtering. The influences of the deposition parameters on the surface passivation, surface damage, optical properties, and composition of the films have been investigated. It is found that proper sputtering power and uniform magnetic field reduced the surface damage from the high-energy ion bombardment to the silicon wafers during the process and consequently decreased the interface trap density, resulting in the good surface passivation; relatively high refractive index of aluminum oxide film is be

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Hlinka, Josef, and Stanislav Lasek. "Influence of Passivation on Wettability of AISI 304 Steel and its Corrosion Properties in Solution of Sodium Hypochlorite." Key Engineering Materials 810 (July 2019): 58–63. http://dx.doi.org/10.4028/www.scientific.net/kem.810.58.

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The contribution is aimed at corrosion propertied and wettability of basic graded of stainless steel commonly used in medicine as a standard for construction of instruments and other applications. Samples of AISI 304 (1.4301) steel were chemical passivated by nitric acid and tested for corrosion resistance in environment of sodium hypochlorite (NaClO), which is commonly used for basic disinfection of surfaces or devices in hospital facilities. It was found that chemical passivation of stainless steel surface increases its corrosion resistance and lower corrosion rate. Passivation layer also sh

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Bal, J. K., and S. Hazra. "Evolution of Interdiffused Gaussian-Shape Nanolayer in Au-Si(111) System at Ambient Condition." Defect and Diffusion Forum 297-301 (April 2010): 1133–39. http://dx.doi.org/10.4028/www.scientific.net/ddf.297-301.1133.

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Evolution of interdiffused Gaussian-shape nanolayer of Au-Si, formed due to diffusion of Au into Si(111) substrate at ambient conditions, depends strongly on the Si surface pretreatment/passivation conditions. Negligible diffusion in the Au-OSi(111) sample, confirms the strong barrier action of the oxide-layer against diffusion, while large diffusion in the Au-HSi(111) sample compared to that in the Au-BrSi(111) sample suggests that the H-passivated Si(111) surface is more stable. This nature of the Au-Si(111) system is qualitatively similar to that of the Au-Si(001) system but it differs quan

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Negoro, Yuki, Akihiko Horiuchi, Kensuke Iwanaga, et al. "Surface Passivation of 4H-SiC for High Current Gain Bipolar Junction Transistors." Materials Science Forum 615-617 (March 2009): 837–40. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.837.

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Surface passivation of 4H-SiC has been investigated for high current-gain bipolar junction transistors (BJTs). For the characterization of surface passivation, we have introduced the product “sp•Ls” of a surface recombination velocity (sp) and a surface diffusion length (Ls). The sp•Ls value was obtained by analyzing the I-V characteristics of pn diodes. Both BJTs and pn diodes were fabricated with several passivation methods. We have found clear correlation between the sp•Ls value and the current gain of the fabricated BJTs. Optimizing the surface passivation, we realized high performance BJT

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