Gotowa bibliografia na temat „Temperature dependent electrical transport”

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Artykuły w czasopismach na temat "Temperature dependent electrical transport"

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Sallam, M. M., B. A. El-Sayed, and A. A. Abdel-Shafi. "The temperature dependent electrical transport in biphenyl derivatives." Current Applied Physics 6, no. 1 (2006): 71–75. http://dx.doi.org/10.1016/j.cap.2004.12.006.

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Wu, H. Y., W. Wang, and W. J. Lu. "Temperature-dependent electrical transport mechanism in amorphous Ge2Sb2Te5films." physica status solidi (b) 253, no. 9 (2016): 1855–60. http://dx.doi.org/10.1002/pssb.201600045.

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VAISH, RAHUL, and KALIDHINDI B. R. VARMA. "ELECTRICAL TRANSPORT STUDIES IN 3Na2O–6.5B2O3 GLASSES." Journal of Advanced Dielectrics 01, no. 03 (2011): 331–36. http://dx.doi.org/10.1142/s2010135x11000355.

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Transparent 3Na2O–6.5B2O3 (NBO) glasses were fabricated via the conventional melt-quenching technique. X-ray powder diffraction (XRD) combined with Differential Scanning Calorimetric (DSC) studies carried out on the as-quenched samples confirmed their amorphous and glassy nature, respectively. The frequency and temperature dependent of the dielectric constant, electric modulus and electrical conductivity of the transparent NBO glasses were investigated in the 100 Hz–10 MHz frequency range. The electrical modulus and conductivity data have been rationalized using Jonscher's universal law. The b
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Muchharla, Baleeswaraiah, T. N. Narayanan, Kaushik Balakrishnan, Pulickel M. Ajayan, and Saikat Talapatra. "Temperature dependent electrical transport of disordered reduced graphene oxide." 2D Materials 1, no. 1 (2014): 011008. http://dx.doi.org/10.1088/2053-1583/1/1/011008.

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Sinha, S., P. L. Srivastava, and R. N. Singh. "Temperature-dependent structure and electrical transport in liquid metals." Journal of Physics: Condensed Matter 1, no. 9 (1989): 1695–705. http://dx.doi.org/10.1088/0953-8984/1/9/014.

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Li, Zhen, Yongsen Han, Ji Liu, Daomin Min, and Shengtao Li. "Investigation of temperature-dependent DC breakdown mechanism of EP/TiO2 nanocomposites." Applied Physics Letters 121, no. 5 (2022): 052901. http://dx.doi.org/10.1063/5.0097351.

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In dielectric science, the electrical breakdown strength of a polymeric material significantly decreases with elevated temperatures, which restricts the development of advanced electrical and electronic applications toward miniaturization. In the present study, to clarify the temperature-dependent DC breakdown mechanisms of epoxy resin (EP)/TiO2 nanocomposites, the effects of nanoparticle incorporation and temperature on charge transport and molecular chain dynamics were studied. The results indicate that space charge accumulation and electric field distortion are reduced by nanoparticle incor
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Park, Jae Young, Hwangyou Oh, Ju-Jin Kim, and Sang Sub Kim. "The temperature-dependent electrical transport mechanism of single ZnO nanorods." Nanotechnology 17, no. 5 (2006): 1255–59. http://dx.doi.org/10.1088/0957-4484/17/5/016.

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Sahu, A. K., S. K. Satpathy, and Banarji Behera. "Dielectric and frequency-dependent transport properties of lanthanum-doped bismuth ferrite." Journal of Advanced Dielectrics 09, no. 04 (2019): 1950031. http://dx.doi.org/10.1142/s2010135x19500310.

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Polycrystalline samples of Bi[Formula: see text]LaxFeO3 [[Formula: see text], 0.6, 0.7 and 0.8] were synthesized through high temperature solid state reaction method. The structural studies of the compounds were done using X-ray diffraction technique. Dielectric constant and dielectric loss were studied for various frequencies (100[Formula: see text]Hz–104[Formula: see text]Hz) at different temperatures. The temperature-dependent non-Debye type relaxation process was suggested in the materials from the analysis of frequency-dependent electrical data at different temperatures. Temperature depen
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Hui, Zhenzhen, Xuzhong Zuo, Longqiang Ye, Xuchun Wang, and Xuebin Zhu. "Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties." Materials 13, no. 2 (2020): 417. http://dx.doi.org/10.3390/ma13020417.

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Thickness is a very important parameter with which to control the microstructures, along with physical properties in transition-metal nitride thin films. In work presented here, CrN films with different thicknesses (from 26 to 130 nm) were grown by chemical solution deposition. The films are pure phase and polycrystalline. Thickness dependence of microstructures and electrical transport behavior were studied. With the increase of films thickness, grain size and nitrogen content are increased, while resistivity, zero-field sensitivity and magnetoresistance are decreased. In the temperature rang
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Zhang, Tong, Liuan Li, and Jin-Ping Ao. "Temperature-dependent electrical transport characteristics of a NiO/GaN heterojunction diode." Surfaces and Interfaces 5 (December 2016): 15–18. http://dx.doi.org/10.1016/j.surfin.2016.08.004.

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