Zaloguj się

Gotowe bibliografie tematyczne / Undoped Semiconductors / Artykuły w czasopismach

Kliknij ten link, aby zobaczyć inne rodzaje publikacji na ten temat: Undoped Semiconductors.

Artykuły w czasopismach na temat „Undoped Semiconductors”

Autor: Grafiati

Data publikacji: 7 września 2023

Data aktualizacji: 31 lipca 2025

Utwórz poprawne odniesienie w stylach APA, MLA, Chicago, Harvard i wielu innych

Wybierz rodzaj źródła:

Sprawdź 50 najlepszych artykułów w czasopismach naukowych na temat „Undoped Semiconductors”.

Przycisk „Dodaj do bibliografii” jest dostępny obok każdej pracy w bibliografii. Użyj go – a my automatycznie utworzymy odniesienie bibliograficzne do wybranej pracy w stylu cytowania, którego potrzebujesz: APA, MLA, Harvard, Chicago, Vancouver itp.

Możesz również pobrać pełny tekst publikacji naukowej w formacie „.pdf” i przeczytać adnotację do pracy online, jeśli odpowiednie parametry są dostępne w metadanych.

Przeglądaj artykuły w czasopismach z różnych dziedzin i twórz odpowiednie bibliografie.

1

Yang, Jin-Peng, Hai-Tao Chen, and Gong-Bin Tang. "Modeling of thickness-dependent energy level alignment at organic and inorganic semiconductor interfaces." Journal of Applied Physics 131, no. 24 (2022): 245501. http://dx.doi.org/10.1063/5.0096697.

Pełny tekst źródła

Streszczenie:

We identify a universality in the Fermi level change of Van der Waals interacting semiconductor interfaces. We show that the disappearing of quasi-Fermi level pinning at a certain thickness of semiconductor films for both intrinsic (undoped) and extrinsic (doped) semiconductors over a wide range of bulk systems including inorganic, organic, and even organic–inorganic hybridized semiconductors. The Fermi level ( EF) position located in the energy bandgap was dominated by not only the substrate work function (Φsub) but also the thickness of semiconductor films, in which the final EF shall be loc

Style APA, Harvard, Vancouver, ISO itp.

2

Fortunato, Elvira, Alexandra Gonçalves, António Marques, et al. "Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices." Materials Science Forum 514-516 (May 2006): 3–7. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.3.

Pełny tekst źródła

Streszczenie:

In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detecto

Style APA, Harvard, Vancouver, ISO itp.

3

Ma, Yandong, Ying Dai, and Baibiao Huang. "ChemInform Abstract: Ferromagnetism in Undoped Semiconductors." ChemInform 42, no. 42 (2011): no. http://dx.doi.org/10.1002/chin.201142213.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

4

Sacco, Olga, Antonietta Mancuso, Vincenzo Venditto, Stefania Pragliola, and Vincenzo Vaiano. "Behavior of N-doped TiO2 and N-doped ZnO in Photocatalytic Azo Dye Degradation under UV and Visible Light Irradiation: A Preliminary Investigation." Catalysts 12, no. 10 (2022): 1208. http://dx.doi.org/10.3390/catal12101208.

Pełny tekst źródła

Streszczenie:

N-doped TiO2 (N-TiO2) and N-doped ZnO (N-ZnO) were synthesized utilizing ammonia as a dopant source. The chemico-physical characteristics of synthesized samples were studied by Raman spectroscopy, X-ray diffraction, SEM analysis, N2 adsorption–desorption at −196 °C, and diffuse reflectance spectroscopy. Compared to undoped samples, the introduction of nitrogen in the semiconductor lattice resulted in a shift of band-gap energy to a lower value: 3.0 eV for N-ZnO and 2.35 eV for N-TiO2. The photocatalysts were tested for the degradation of Eriochrome Black T (EBT), which was selected as a model

Style APA, Harvard, Vancouver, ISO itp.

5

Khidirova, Maftuna, and Abdigani Yuldoshev. "SEMICONDUCTORS." Journal of Universal Science Research 1, no. 6 (2023): 613–16. https://doi.org/10.5281/zenodo.8047079.

Pełny tekst źródła

Streszczenie:

In this article, we have explained about semiconductors, their types and their properties with scientifically based results.Semiconductors are materials that have properties in between normal conductors (materials that allow electric current to pass, e.g. aluminium) and insulators (which block electric current, e.g. sulphur).Semiconductors fall into two broad categories. First, there are intrinsic semiconductors. These are composed of only one kind of material. Silicon and germanium are two examples. They are also called "undoped semiconductors" or "i-type semiconductors".E

Style APA, Harvard, Vancouver, ISO itp.

6

Huang, Danhong, T. Apostolova, P. M. Alsing, and D. A. Cardimona. "Thermal-drag carrier cooling in undoped semiconductors." Journal of Applied Physics 98, no. 6 (2005): 063516. http://dx.doi.org/10.1063/1.2041842.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

7

Zhang, Zhufeng, Yinshuan Ren, and Lu Han. "Cr-doped CdS and ZnS nano/micro structure with ferromagnetic properties." Emerging Materials Research 13, no. 3 (2024): 1–10. http://dx.doi.org/10.1680/jemmr.24.00003.

Pełny tekst źródła

Streszczenie:

Transition metal doped CdS and ZnS dilute magnetic semiconductors have attracted widespread research interests due to their potential spin electron applications. Most of these theoretical and experimental analyses have focused on studying their optical properties. In response to the widespread application of dilute magnetic semiconductor nanomaterials in electronic components, semiconductor chips, integrated circuits, and other fields, based on solvent thermal method,the dilute magnetic semiconductors with room temperature ferromagnetic Cr-doped CdS and ZnS nanostructures were synthesized by s

Style APA, Harvard, Vancouver, ISO itp.

8

Sikam, Pornsawan, Ruhan Thirayatorn, Thanayut Kaewmaraya, Prasit Thongbai, Pairot Moontragoon, and Zoran Ikonic. "Improved Thermoelectric Properties of SrTiO3 via (La, Dy and N) Co-Doping: DFT Approach." Molecules 27, no. 22 (2022): 7923. http://dx.doi.org/10.3390/molecules27227923.

Pełny tekst źródła

Streszczenie:

This work considers the enhancement of the thermoelectric figure of merit, ZT, of SrTiO3 (STO) semiconductors by (La, Dy and N) co-doping. We have focused on SrTiO3 because it is a semiconductor with a high Seebeck coefficient compared to that of metals. It is expected that SrTiO3 can provide a high power factor, because the capability of converting heat into electricity is proportional to the Seebeck coefficient squared. This research aims to improve the thermoelectric performance of SrTiO3 by replacing host atoms by La, Dy and N atoms based on a theoretical approach performed with the Vienna

Style APA, Harvard, Vancouver, ISO itp.

9

Hüsser, O. E., H. von Käanel, and F. Lévy. "Photoelectrochemistry of Doped and Undoped Semiconductors: A Comparison." Journal of The Electrochemical Society 132, no. 4 (1985): 810–14. http://dx.doi.org/10.1149/1.2113963.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

10

Hossein-Babaei, Faramarz, Saeed Masoumi, and Amirreza Noori. "Seebeck voltage measurement in undoped metal oxide semiconductors." Measurement Science and Technology 28, no. 11 (2017): 115002. http://dx.doi.org/10.1088/1361-6501/aa82a4.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

11

Bonapasta, Aldo Amore. "Theory of H sites in undoped crystalline semiconductors." Physica B: Condensed Matter 170, no. 1-4 (1991): 168–80. http://dx.doi.org/10.1016/0921-4526(91)90120-4.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

12

Vishnyakov, N. V. "Formation of Potential Barriers in Undoped Disordered Semiconductors." Semiconductors 39, no. 10 (2005): 1147. http://dx.doi.org/10.1134/1.2085261.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

13

Ladjahirin, Nor Amirah, Norfarariyanti Parimon, Mohamad Hafiz Mamat, Mohd Firdaus Malek, and Muhammad Nur Afnan Uda. "Undoped and Li-Doped NiO Coral Reef-like Structures Fabricated using Immersion Method." MATEC Web of Conferences 397 (2024): 03001. http://dx.doi.org/10.1051/matecconf/202439703001.

Pełny tekst źródła

Streszczenie:

Nickel oxide (NiO) is one of the p-type semiconductors with unique properties suitable for nanosensor applications. It has a wide range band gap and can be fabricated in various methods, leading to different nanostructures and results. In this study, undoped and lithium (Li)-doped NiO were fabricated using the immersion method to investigate their properties. The field emission scanning electron microscopy analysis revealed that both samples produced two layers of nanosheet and nano coral reef-like (CR) structures. X-ray diffraction patterns confirmed the average crystallite sizes for undoped

Style APA, Harvard, Vancouver, ISO itp.

14

Mittova, Irina Ya, Boris V. Sladkopevtsev, and Valentina O. Mittova. "Nanoscale semiconductor and dielectric films and magnetic nanocrystals – new directions of development of the scientific school of Ya. A. Ugai “Solid state chemistry and semiconductors”. Review." Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases 23, no. 3 (2021): 309–36. http://dx.doi.org/10.17308/kcmf.2021.23/3524.

Pełny tekst źródła

Streszczenie:

New directions of development of the scientific school of Yakov Aleksandrovich Ugai “Solid state chemistry and semiconductors” were considered for the direction “Study of semiconductors and nanostructured functional films based on them”, supervised by I. Ya. Mittova. The study of students and followers of the scientific school of Ya. A. Ugai cover materials science topics in the field of solid-state chemistry and inorganic and physical chemistry. At the present stage of research, the emphasis is being placed precisely on nanoscale objects, since in these objects the main mechanisms of modern s

Style APA, Harvard, Vancouver, ISO itp.

15

Siethoff, H. "Dynamical recovery, dislocation mobility, and diffusion in undoped semiconductors." Physica Status Solidi (a) 138, no. 2 (1993): 591–99. http://dx.doi.org/10.1002/pssa.2211380227.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

16

Ali, Farida Ashraf, Gouranga Bose, Sushanta Kumar Kamilla, Dilip Kumar Mishra, and Priyabrata Pattanaik. "Fabrication and characterization of n-ZnO/p-GaSb heterojunction diode." Microelectronics International 36, no. 4 (2019): 143–49. http://dx.doi.org/10.1108/mi-01-2019-0002.

Pełny tekst źródła

Streszczenie:

Purpose The purpose of this paper is to examine the growth and characterization of the two different compound semiconductors, namely, n-zinc oxide (ZnO) and p-gallium antimonide (GaSb). In this paper, fabrication and characterization of n-ZnO/p-GaSb heterojunction diode is analyzed. Design/methodology/approach Thermo vertical direction solidification (TVDS) method was used to synthesize undoped GaSb ingot from high purity Ga (5N) and Sb (4N) host materials. Thermal evaporation technique is used to prepare a film of GaSb on glass substrate from the pre-synthesized bulk material by TVDS method.

Style APA, Harvard, Vancouver, ISO itp.

17

Williams, J. S., Y. Chen, J. Wong-Leung, A. Kerr, and M. V. Swain. "Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters." Journal of Materials Research 14, no. 6 (1999): 2338–43. http://dx.doi.org/10.1557/jmr.1999.0310.

Pełny tekst źródła

Streszczenie:

Details of microindentation of silicon, such as the semiconductor-to-metal transformation, which takes place on loading, have been examined using spherical indenters. Various forms of silicon are studied, including heavily boron-doped wafers and silicon damaged and amorphized by ion implantation as well as material containing dislocations. Results indicate that only silicon, which contains high concentrations of point defects or is amorphous, exhibits mechanical properties that differ significantly from undoped, defect-free crystal. Amorphous silicon exhibits plastic flow under low indentation

Style APA, Harvard, Vancouver, ISO itp.

18

Абдреймов, Али, Данияр Мадияров, Саятхан Ибраймова та Аманлық Далибаев. "ОПРЕДЕЛЕНИЯ ШИРИНА ЗАПРЕШЕННЫЙ ЗОНЫ ГЕРМАНИЯ". Multidisciplinary Journal of Science and Technology 4, № 11 (2024): 268–76. https://doi.org/10.5281/zenodo.14247071.

Pełny tekst źródła

Streszczenie:

Knowledge of the parameters characterizing any diodes or diode structures, and knowledge of the method of their analysis is one of the most important issues in semiconductor electronics, radio electronics, and telecommunications. The study of the causes of uneven current flow and its negative impact on performance in the production of semiconductor devices and the study of methods for solving them is one of the main problems of semiconductor electronics and is an urgent problem at the present time. The band gap of semiconductors has been calculated by several scientists, but differences in the

Style APA, Harvard, Vancouver, ISO itp.

19

Chaudhuri, Reet, Samuel James Bader, Zhen Chen, David A. Muller, Huili Grace Xing, and Debdeep Jena. "A polarization-induced 2D hole gas in undoped gallium nitride quantum wells." Science 365, no. 6460 (2019): 1454–57. http://dx.doi.org/10.1126/science.aau8623.

Pełny tekst źródła

Streszczenie:

A high-conductivity two-dimensional (2D) hole gas, analogous to the ubiquitous 2D electron gas, is desirable in nitride semiconductors for wide-bandgap p-channel transistors. We report the observation of a polarization-induced high-density 2D hole gas in epitaxially grown gallium nitride on aluminium nitride and show that such hole gases can form without acceptor dopants. The measured high 2D hole gas densities of about 5 × 1013 per square centimeters remain unchanged down to cryogenic temperatures and allow some of the lowest p-type sheet resistances among all wide-bandgap semiconductors. The

Style APA, Harvard, Vancouver, ISO itp.

20

Abdullahi, Sabiu Said, Garba Shehu Musa Galadanci, Norlaily Mohd Saiden, and Josephine Ying Chyi Liew. "Assessment of Magnetic Properties between Fe and Ni Doped ZnO Nanoparticles Synthesized by Microwave Assisted Synthesis Method." Solid State Phenomena 317 (May 2021): 119–24. http://dx.doi.org/10.4028/www.scientific.net/ssp.317.119.

Pełny tekst źródła

Streszczenie:

The emergence of Dilute Magnetic Semiconductors (DMS) with a potentials for spintronic application have attracted much researches attention, special consideration has been given to ZnO semiconductor material due to its wide band gap of 3.37 eV, large exciting binding energy of 60 meV, moreover, its ferromagnetic behavior at room temperature when doped with transition metals. MxZn1-xO (M = Fe or Ni) nanoparticles were synthesized by microwave assisted synthesis method calcined at 600°C. The structural, morphological and magnetic properties of these nanoparticles were studied using X-ray Diffrac

Style APA, Harvard, Vancouver, ISO itp.

21

Seyidov, MirHasan Yu, Faik A. Mikailzade, Rauf A. Suleymanov, Vafa B. Aliyeva, Tofig G. Mammadov, and Galib M. Sharifov. "Polarization switching in undoped and La-doped TlInS2 ferroelectric-semiconductors." Physica B: Condensed Matter 526 (December 2017): 45–53. http://dx.doi.org/10.1016/j.physb.2017.07.003.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

22

Wu, Meirong, Zhiqiang Wei, Wenhua Zhao, Xuan Wang, and Jinlong Jiang. "Optical and Magnetic Properties of Ni Doped ZnS Diluted Magnetic Semiconductors Synthesized by Hydrothermal Method." Journal of Nanomaterials 2017 (2017): 1–9. http://dx.doi.org/10.1155/2017/1603450.

Pełny tekst źródła

Streszczenie:

Diluted magnetic semiconductors Zn1-xNixS with different consistency ratio (x = 0, 0.01, 0.03, 0.05, and 0.07) were successfully synthesized by hydrothermal method using ethylenediamine as a modifier. The influence of Ni doping concentration on the microstructure, morphology, and optical and magnetic properties of undoped and Ni doped ZnS nanocrystals was characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), X-ray energy dispersive spectrometry (XEDS), ultraviolet-visible spectroscopy (UV-vis), Fourier transform infrared spectroscopy (FT-IR), photo

Style APA, Harvard, Vancouver, ISO itp.

23

PEARTON, S. J. "HYDROGEN IN CRYSTALLINE SEMICONDUCTORS: PART I—SILICON." International Journal of Modern Physics B 08, no. 09 (1994): 1093–158. http://dx.doi.org/10.1142/s0217979294000543.

Pełny tekst źródła

Streszczenie:

Hydrogen plays an important role in the properties of Si because of its ability to passivate the electrical activity of shallow dopants and deep level impurities. This passivation can occur during virtually every stage of crystal growth, device fabrication or device operation due to the rapid diffusivity of hydrogen at low temperatures and the fact that it is a component of virtually every gas or liquid that comes in contact with Si. We review the ability of hydrogen to form neutral complexes with dopants and impurities, give examples of hydrogen diffusion profiles in doped and undoped Si, and

Style APA, Harvard, Vancouver, ISO itp.

24

Heng, Chenglin, Xuan Wang, Chaonan Zhao, et al. "Ultrathin Rare-Earth-Doped MoS2 Crystalline Films Prepared with Magnetron Sputtering and Ar + H2 Post-Annealing." Crystals 13, no. 2 (2023): 308. http://dx.doi.org/10.3390/cryst13020308.

Pełny tekst źródła

Streszczenie:

In this work, we propose a method to prepare large-area, crystalline ultrathin rare-earth (RE, i.e., Eu, Yb, Er and Tb)-doped MoS2 thin films, using magnetron sputtering and subsequent Ar + H2 annealing. The film thickness of as-deposited samples varied from 60 to 100 nm, and decreases to be below 10 nm after annealing at 550 °C for 30 min. X-ray diffraction and Raman spectra analysis revealed that the sample films were crystallized after the annealing, which resulted in a MoS2 crystallite size of about 4–5 nm. X-ray photoelectron spectroscopy indicated that most of the RE ions existed in the

Style APA, Harvard, Vancouver, ISO itp.

25

Kim, Chang-Hyun. "Bulk versus Contact Doping in Organic Semiconductors." Micromachines 12, no. 7 (2021): 742. http://dx.doi.org/10.3390/mi12070742.

Pełny tekst źródła

Streszczenie:

This study presents a comparative theoretical analysis of different doping schemes in organic semiconductor devices. Especially, an in-depth investigation into bulk and contact doping methods is conducted, focusing on their direct impact on the terminal characteristics of field-effect transistors. We use experimental data from a high-performance undoped organic transistor to prepare a base simulation framework and carry out a series of predictive simulations with various position- and density-dependent doping conditions. Bulk doping is shown to offer an overall effective current modulation, wh

Style APA, Harvard, Vancouver, ISO itp.

26

Nikiforova, Polina, Anna Bogatskaya, and Alexander Popov. "Enhanced Bolometric Detection of THz Signals by a Resonant Structure for Inclined Radiation Incidence." Photonics 11, no. 1 (2023): 42. http://dx.doi.org/10.3390/photonics11010042.

Pełny tekst źródła

Streszczenie:

In this work, we consider the possibility of enhancing terahertz bolometric detection efficiency using resonant structures in the case of an inclined incidence of radiation. The structures are made of a sequence of doped and undoped semiconductors, including epsilon-near-zero areas. Undoped regions act as electromagnetic resonators, thus ensuring resonant signal penetration through the opaque (doped) regions of the structure. A set of epsilon-near-zero areas can ensure substantial enhancements to the electric field in the material. In the doped regions, absorption occurs. The structure describ

Style APA, Harvard, Vancouver, ISO itp.

27

Freitas, Jr., J. A., and W. J. Moore. "Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors." Brazilian Journal of Physics 28, no. 1 (1998): 12–18. http://dx.doi.org/10.1590/s0103-97331998000100002.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

28

Sato, Shin-ichiro, Hitoshi Sai, Takeshi Ohshima, Mitsuru Imaizumi, Kazunori Shimazaki, and Michio Kondo. "Electric properties of undoped hydrogenated amorphous silicon semiconductors irradiated with self-ions." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 285 (August 2012): 107–11. http://dx.doi.org/10.1016/j.nimb.2012.05.010.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

29

Appelbaum, Ian. "Introduction to spin-polarized ballistic hot electron injection and detection in silicon." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, no. 1951 (2011): 3554–74. http://dx.doi.org/10.1098/rsta.2011.0137.

Pełny tekst źródła

Streszczenie:

Ballistic hot electron transport overcomes the well-known problems of conductivity and spin lifetime mismatch that plague spin injection attempts in semiconductors using ferromagnetic ohmic contacts. Through the spin dependence of the mean free path in ferromagnetic thin films, it also provides a means for spin detection after transport. Experimental results using these techniques (consisting of spin precession and spin-valve measurements) with silicon-based devices reveals the exceptionally long spin lifetime and high spin coherence induced by drift-dominated transport in the semiconductor. A

Style APA, Harvard, Vancouver, ISO itp.

30

Hossein-Babaei, Faramarz, and S. Masoumi. "Electrical Resistance and Seebeck Effect in Undoped Polycrystalline Zinc Oxide." Key Engineering Materials 605 (April 2014): 185–88. http://dx.doi.org/10.4028/www.scientific.net/kem.605.185.

Pełny tekst źródła

Streszczenie:

Thermoelectric properties of metal oxide semiconductors are of increasing interest in the field of sensors design and fabrication. The oxide components in the majority of such applications are polycrystalline in which the charge transportation is controlled both by the microstructure and the bulk properties of the material. While the dependence of the electrical resistivity on the microstructural and compositional changes in these materials is well understood, the complications encountered with their thermoelectric properties, have remained unattended. Here, we report experimental data on the

Style APA, Harvard, Vancouver, ISO itp.

31

Knupfer, M., and G. Paasch. "Origin of the interface dipole at interfaces between undoped organic semiconductors and metals." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23, no. 4 (2005): 1072–77. http://dx.doi.org/10.1116/1.1885021.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

32

Arslanov, R. K., M. I. Daunov, and U. Z. Zalibekov. "Impurity energy spectrum in undoped dilute magnetic p-InAs semiconductors at hydrostatic pressures." Herald of Dagestan State University 33, no. 2 (2018): 51–56. http://dx.doi.org/10.21779/2542-0321-2018-33-2-51-56.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

33

Богацкая, А. В., Н. В. Кленов, П. М. Никифорова, А. М. Попов та А. Е. Щеголев. "Резонансное болометрическое детектирование широкополосных сигналов терагерцевого диапазона частот". Письма в журнал технической физики 47, № 17 (2021): 50. http://dx.doi.org/10.21883/pjtf.2021.17.51388.18850.

Pełny tekst źródła

Streszczenie:

We discuss the detection of broadband radiation in the terahertz frequency range by a bolometric method using heterostructures consisting of a sequence of conducting and dielectric layers of doped and undoped semiconductors (gallium arsenide, germanium). This structure forms a photonic crystal with allowed and forbidden bands (absorption and transmission ranges). By selecting the thicknesses of the conductive and non-conductive layers and the doping levels, it is possible to form spectral intervals of effective absorption, which allows detecting pulses in the frequency range >10^12 Hz with

Style APA, Harvard, Vancouver, ISO itp.

34

Gherras, Hamou, Ahmed Yahiaoui, Aicha Hachemaoui, Abdelkader Belfedal, Abdelkader Dehbi, and Andreas Zeinert. "Synthesis and characterization of poly(pyrrole-co-2-nitrocinnamaldehyde) (PPNC), a new copolymer for solar cells applications." Polymers and Polymer Composites 28, no. 4 (2019): 265–72. http://dx.doi.org/10.1177/0967391119872876.

Pełny tekst źródła

Streszczenie:

The use of conductive polymers as a substitute for metallic conductors and semiconductors has attracted much attention in the literature. In particular, aromatic heterocyclic polymers constitute an important class since they possess chemical and electrical stability in both the oxidized (doped) and neutral (undoped) state. A series of poly(pyrrole- co-2-nitrocinnamaldehyde) were obtained via the condensation of pyrrole and 2-nitrocinnamaldehyde in chloroform using acid exchanged montmorillonite clay called maghnite-H+ as an efficient catalyst. The conjugated copolymer was characterized using p

Style APA, Harvard, Vancouver, ISO itp.

35

PERAKIS, I. E., and T. V. SHAHBAZYAN. "CANONICAL TRANSFORMATION APPROACH TO THE ULTRAFAST NONLINEAR OPTICAL DYNAMICS OF SEMICONDUCTORS." International Journal of Modern Physics B 13, no. 08 (1999): 869–93. http://dx.doi.org/10.1142/s0217979299000734.

Pełny tekst źródła

Streszczenie:

We develop a theory describing the effects of many-particle Coulomb correlations on the coherent ultrafast nonlinear optical response of semiconductors and metals. Our approach is based on a mapping of the nonlinear optical response of the "bare" system onto the linear response of a "dressed" system. The latter is characterized by effective time-dependent optical transition matrix elements, electron/hole dispersions, and interaction potentials, which in undoped semiconductors are determined by the single-exciton and two-exciton Green functions in the absence of optical fields. This mapping is

Style APA, Harvard, Vancouver, ISO itp.

36

Abdellaziz, I., I. Mellouki, S. Abroug, and N. Yacoubi. "Photopyroelectric back detection configuration for thermal diffusivity measurement of undoped and doped GaSb semiconductors." IOP Conference Series: Materials Science and Engineering 28 (February 7, 2012): 012001. http://dx.doi.org/10.1088/1757-899x/28/1/012001.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

37

REDFIELD, DAVID. "DEFECTS IN AMORPHOUS Si:H — THE REHYBRIDIZED TWO-SITE (RTS) MODEL." Modern Physics Letters B 05, no. 14n15 (1991): 933–39. http://dx.doi.org/10.1142/s0217984991001167.

Pełny tekst źródła

Streszczenie:

A comprehensive model for the metastable defects in amorphous Si:H is developed by adapting a recent theory for several kinds of defects in crystalline semiconductors, particularly the DX center in AlGaAs. This new model accounts in a unified way for all of the major observations of defects induced by light, quenching, doping, or compensation; as well as for their anneal. The stretched-exponential time dependence of defect densities with light exposure or annealing, and saturation of the density are also explained. This model is based on foreign atoms rather than on breaking of Si-Si bonds, an

Style APA, Harvard, Vancouver, ISO itp.

38

Huang, Menglin, Zhengneng Zheng, Zhenxing Dai, et al. "DASP: Defect and Dopant ab-initio Simulation Package." Journal of Semiconductors 43, no. 4 (2022): 042101. http://dx.doi.org/10.1088/1674-4926/43/4/042101.

Pełny tekst źródła

Streszczenie:

Abstract In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, the Defect and Dopant ab-initio Simulation Package (DASP), which is composed of four modules for calculating: (i) elemental chemical potentials, (ii) defect (dopant) formation energies and charge-state transition levels, (iii) defect and carrier densities and (iv) carrier dynamics properties of high-density defects. DASP uses the materials genome database for quick determination of competing secondary phases when calculating the elemental chemic

Style APA, Harvard, Vancouver, ISO itp.

39

Kozlov, R. Yu, S. S. Kormilitsina, E. V. Molodtsova, and E. O. Zhuravlev. "Growing indium antimonide single crystals with a diameter of 100 mm by the modified Chochralsky method." Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 24, no. 3 (2021): 190–98. http://dx.doi.org/10.17073/1609-3577-2021-3-190-198.

Pełny tekst źródła

Streszczenie:

At present, all over the world there is a tendency to increase the diameters of single crystals of both elementary semiconductors and semiconductor compounds. There are reports indicating the use of single crystals of III-V semiconductors with a diameter of four to six inches. So far, indium antimonide single crystals up to 75 mm in diameter have been obtained in Russia.Indium antimonide is the element base of the broadest field of solid-state electronics — optoelectronics. On its basis, linear and matrix photodetectors are manufactured, operating in the spectral wavelength range of 3-5 micron

Style APA, Harvard, Vancouver, ISO itp.

40

Gaied, Imen, Salima Lassoued, Fredéric Genty, and Noureddine Yacoubi. "New Photothermal Deflection Method to Determine Thermal Properties of Bulk Semiconductors." Defect and Diffusion Forum 297-301 (April 2010): 525–30. http://dx.doi.org/10.4028/www.scientific.net/ddf.297-301.525.

Pełny tekst źródła

Streszczenie:

In this paper, we present a new Photothermal Deflection Technique (PTD) to determine thermal properties of bulk doped or undoped semiconductor such as GaAs, GaSb, InAs, etc. The method proposed here consists in covering the sample with a thin graphite layer in order to increase the photothermal signal and to ovoid any reflection on the sample surface. This method deals with the analysis of the logarithm of amplitude and phase variation of the photothermal signal versus square root modulation frequency where the sample placed in air is heated by a modulated light beam coming from a halogen lamp

Style APA, Harvard, Vancouver, ISO itp.

41

Kozlov, Roman Yu, Svetlana S. Kormilitsina, Elena V. Molodtsova, and Eugene O. Zhuravlev. "Growth of 100 mm indium antimonide single crystals by modified Czochralski technique." Modern Electronic Materials 7, no. 2 (2021): 73–78. http://dx.doi.org/10.3897/j.moem.7.2.76286.

Pełny tekst źródła

Streszczenie:

Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According to literary data the diameter of 3–5 semiconductor single crystals grown nowadays is 4 to 6 inches. So far up to 75 mm indium antimonide single crystals have been grown in Russia. Indium antimonide is the element base for the widest field of solid state electronics, i.e., optoelectronics. Indium antimonide is used for the fabrication of 3–5 mm range linear photodetectors and photodetector arrays used as light-sensitive material in heat vision syst

Style APA, Harvard, Vancouver, ISO itp.

42

Kozlov, Roman Yu., Svetlana S. Kormilitsina, Elena V. Molodtsova, and Eugene O. Zhuravlev. "Growth of 100 mm indium antimonide single crystals by modified Czochralski technique." Modern Electronic Materials 7, no. (2) (2021): 73–78. https://doi.org/10.3897/j.moem.7.2.76286.

Pełny tekst źródła

Streszczenie:

Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According to literary data the diameter of 3–5 semiconductor single crystals grown nowadays is 4 to 6 inches. So far up to 75 mm indium antimonide single crystals have been grown in Russia. Indium antimonide is the element base for the widest field of solid state electronics, i.e., optoelectronics. Indium antimonide is used for the fabrication of 3–5 mm range linear photodetectors and photodetector arrays used as light-sensitive material in heat vision syst

Style APA, Harvard, Vancouver, ISO itp.

43

Kao, Chyuan-Haur, Chia-Shao Liu, Shih-Ming Chan, et al. "Effects of NH3 Plasma and Mg Doping on InGaZnO pH Sensing Membrane." Membranes 11, no. 12 (2021): 994. http://dx.doi.org/10.3390/membranes11120994.

Pełny tekst źródła

Streszczenie:

In this study, the effects of magnesium (Mg) doping and Ammonia (NH3) plasma on the pH sensing capabilities of InGaZnO membranes were investigated. Undoped InGaZnO and Mg-doped pH sensing membranes with NH3 plasma were examined with multiple material analyses including X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectroscopy and transmission electron microscope, and pH sensing behaviors of the membrane in electrolyte-insulator-semiconductors. Results indicate that Mg doping and NH3 plasma treatment could superpositionally enhance crystallization in fine nanostructur

Style APA, Harvard, Vancouver, ISO itp.

44

Gan, Zhaofeng, Michael DiNezza, Yong-Hang Zhang, David J. Smith, and Martha R. McCartney. "Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination." Microscopy and Microanalysis 21, no. 6 (2015): 1406–12. http://dx.doi.org/10.1017/s1431927615015378.

Pełny tekst źródła

Streszczenie:

AbstractThe mean inner potential (MIP) and inelastic mean free path (IMFP) of undoped ZnTe are determined using a combination of off-axis electron holography and convergent beam electron diffraction. The ZnTe MIP is measured to be 13.7±0.6 V, agreeing with previously reported simulations, and the IMFP at 200 keV is determined to be 46±2 nm for a collection angle of 0.75 mrad. Dynamical effects affecting holographic phase imaging as a function of incident beam direction for several common semiconductors are systematically studied and compared using Bloch wave simulations. These simulation resul

Style APA, Harvard, Vancouver, ISO itp.

45

WANG, HAI-BIN, PING PENG, YUAN-HONG TANG, DAN WANG, and LI-MING TANG. "TUNING THE "d0" FERROMAGNETISM IN In2O3 QUANTUM DOTS BY DANGLING BONDS AND VACANCY BASED ON THE FIRST-PRINCIPLE CALCULATION." Modern Physics Letters B 27, no. 10 (2013): 1350068. http://dx.doi.org/10.1142/s0217984913500681.

Pełny tekst źródła

Streszczenie:

It is difficult to tune the magnetic properties of oxide diluted magnetic semiconductors because of the origin of ferromagnetism (FM) under different versions. Using first-principles band-structure calculations, we find that the surface oxygen dangling bonds and Indium vacancy may be responsible for the unexpected ferromagnetism in undoped In 2 O 3 quantum dots (QDs). The surface oxygen dangling bonds produce a magnetic moment of 6 μB, which primarily distribute on the surface oxygen atoms and an Indium vacancy ( V In ) produce a magnetic moment of 3 μB, which primarily distribute on the six O

Style APA, Harvard, Vancouver, ISO itp.

46

Fink, J. "Electronic structure studies of conducting polymers by electron energy-loss spectroscopy." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 160–61. http://dx.doi.org/10.1017/s0424820100163265.

Pełny tekst źródła

Streszczenie:

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of convention

Style APA, Harvard, Vancouver, ISO itp.

47

Hasan, Sayedul, Mohammad Tanvir Ahmed, Abdullah Al Roman, Shariful Islam, and Farid Ahmed. "Investigation of Structural, Electronic, and Optical Properties of Chalcogen-Doped ZrS2: A DFT Analysis." Advances in Materials Science and Engineering 2023 (February 23, 2023): 1–10. http://dx.doi.org/10.1155/2023/6525507.

Pełny tekst źródła

Streszczenie:

The electrical and optical characteristics of a ZrS2 monolayer doped with chalcogen atoms (O, Se, or Te), where dopants are introduced by substituting the S atom, are examined on the basis of the density functional theory. The semiconductors pristine ZrS2 and O, Se, and Te-doped ZrS2 monolayers possessed indirect band gaps of 1.187 eV, 1.227 eV, 1.146 eV, and 0.922 eV, respectively. According to the formation energy, the O-doped ZrS2 monolayer is more stable compared to Se-doped and Te-doped ZrS2 monolayers. The optical properties are very similar for both the undoped and doped ZrS2 monolayers

Style APA, Harvard, Vancouver, ISO itp.

48

Lin, Der Yuh, Tung Pai Huang, Fan Lei Wu, Chih Ming Lin, Ying Sheng Huang, and Kwong Kau Tiong. "Anisotropy of Photoluminescence in Layered Semiconductors ReS₂ and ReS₂:Au." Solid State Phenomena 170 (April 2011): 135–38. http://dx.doi.org/10.4028/www.scientific.net/ssp.170.135.

Pełny tekst źródła

Streszczenie:

The optical anisotropy properties of rhenium disulphide (ReS2) and Au-doped rhenium disulphide (ReS2:Au) have been investigated by polarization-dependent photoluminescence (PL). Because the excitonic transitions show strong polarization dependences in the near-infrared region, we used polarization-dependent PL measurements in the range between 0° and 180° to characterize the unique polarization property of ReS2 and ReS2:Au, and identify the origin of the excitonic transitions. It was observed that the variation in the amplitude of PL excitonic transitions with different polarization characteri

Style APA, Harvard, Vancouver, ISO itp.

49

Ikenoue, Takumi, Satoshi Yoneya, Masao Miyake, and Tetsuji Hirato. "Epitaxial Growth and Bandgap Control of Ni1-xMgxO Thin Film Grown by Mist Chemical Vapor Deposition Method." MRS Advances 5, no. 31-32 (2020): 1705–12. http://dx.doi.org/10.1557/adv.2020.219.

Pełny tekst źródła

Streszczenie:

ABSTRACTWide-bandgap oxide semiconductors have received significant attention as they can produce devices with high output and breakdown voltage. p-Type conductivity control is essential to realize bipolar devices. Therefore, as a rare wide-bandgap p-type oxide semiconductor, NiO (3.7 eV) has garnered considerable attention. In view of the heterojunction device with Ga2O3 (4.5–5.0 eV), a p-type material with a large bandgap is desired. Herein, we report the growth of a Ni1-xMgxO thin film, which has a larger bandgap than NiO, on α-Al2O3 (0001) substrates that was developed using the mist chemi

Style APA, Harvard, Vancouver, ISO itp.

50

Sharifa, Bekmuradovna Utamuradova, Sultanpahsa Anvarovna Muzafarova, and Alimardon Samaritdinovich Achilov. "Electrical and Optical Properties of Thin-Film Wide-Gap Metal Oxides Sno 2, In 2 O 3 , Ito , Cdo , Moo 3." INTERNATIONAL JOURNAL OF MULTIDISCIPLINARY RESEARCH AND ANALYSIS 07, no. 04 (2024): 1612–15. https://doi.org/10.5281/zenodo.10973111.

Pełny tekst źródła

Streszczenie:

The electrical properties of the created doped and undoped wide-gap layers of metal oxides SnO 2, In 2 O 3 , ITO , CdO , MoO 3 were studied. Depending on technological factors. The optimal growth conditions for these semiconductor materials have been determined. The study of the electro physical and optical properties of the resulting oxide films confirmed the stability of the operational parameters of oxide materials SnO 2, In 2 O 3 , ITO , CdO , MoO 3 . The AFM method showed, along with the oxides SnO 2, In 2 O 3 , ITO , CdO , the oxide of pure MoO3 has The highest transmittance is in the vi

Style APA, Harvard, Vancouver, ISO itp.

Oferujemy zniżki na wszystkie plany premium dla autorów, których prace zostały uwzględnione w tematycznych zestawieniach literatury. Skontaktuj się z nami, aby uzyskać unikalny kod promocyjny!