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Data publikacji: 3 czerwca 2025

Data aktualizacji: 31 lipca 2025

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1

Guan, Jingcheng. "Modelling zinc oxide thin-film growth." Thesis, Loughborough University, 2018. https://dspace.lboro.ac.uk/2134/36311.

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Photovoltaics have a significant role in the solution of energy supply and energy security. Research on photovoltaic devices and their production processes has been carried out for decades. The transparent conducting oxide layer, in the photovoltaic solar cell, composed of aluminium doped zinc oxide, is produced through deposition techniques. By modelling these depositions using classical molecular dynamics, a better understanding on the short term kinetics occurring on the growing surface has been achieved. Compared to the molecular dynamics, the employment of the adaptive kinetic Monte Carlo

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2

Li, Sonny X. "Nitrogen doped zinc oxide thin film." Berkeley, Calif. : Oak Ridge, Tenn. : Lawrence Berkeley National Laboratory ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2003. http://www.osti.gov/servlets/purl/821916-VLVAK9/native/.

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Thesis (M.S.); Submitted to the University of California, Berkeley, 210 Hearst Mining Memorial Bldg., Berkeley, CA 94720 (US); 15 Dec 2003.<br>Published through the Information Bridge: DOE Scientific and Technical Information. "LBNL--54116" Li, Sonny X. USDOE Director. Office of Science. Basic Energy Sciences (US) 12/15/2003. Report is also available in paper and microfiche from NTIS.

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Lloyd, Adam L. "Modelling silver thin film growth on zinc oxide." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/24860.

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Ag thin film growth on ZnO substrates has been investigated theoretically using multi-timescale simulation methods. The models are based on an atomistic approach where the interactions between atoms are treated classically using a mixture of fixed and variable charge potential energy functions. After some preliminary tests it was found that existing fixed charge potential functions were unreliable for surface growth simulations. This resulted in the development of a ReaxFF variable charge potential fitted to Ag/ZnO surface interactions. Ab initio models of simple crystal structures and surface

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4

Young, Sheng-Yu. "DLC thin film assisted zinc oxide nanowires growth." College Park, Md.: University of Maryland, 2008. http://hdl.handle.net/1903/8613.

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Thesis (M.S.) -- University of Maryland, College Park, 2008.<br>Thesis research directed by: Dept. of Materials Science and Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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Vempati, Sesha Pavan Kumar. "Thin film and nanostructures zinc oxide : characterisation and device applications." Thesis, Queen's University Belfast, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.580108.

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This thesis reports the preparation and characterization of ZnO films and nanostructures and their incorporation in simple devices. The characterization includes imaging techniques - atomic force-, scanning electron- and transmission electron- microscopies (and accompanying analysis) - as well as X-ray diffraction (confirming wurzite structure in all the form of ZnO), photoluminescence (elucidating exciton and defect bands), Raman spectroscopy (dopent incorporation, including defects) and, importantly, optical absorption since it is crucial to confirm the various forms of ZnO as transparent co

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6

Tang, Zhirong. "Zinc oxide thin film fabrication, characterization and application to acoustic fibers." Thesis, McGill University, 1990. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=59987.

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High quality, well oriented Zinc Oxide polycrystal thin films on oriented Si crystal surfaces and amorphous SiO$ sb2$/Si, Corning Glass and Al/SiO$ sb2$/Si substrates have been produced by a DC conical reactive S-GUN magnetron sputtering technique. X-Ray diffraction measurements, scanning electron microscopy measurements and ultrasonic measurements have been used to characterize the film properties. It has been shown that our films have 1$ sp circ$ Full Width Half Magnitude rocking curves of (002) and (004) reflection planes on Si surfaces, 1.2$ sp circ$ FWHM (002) and (004) plane rocking curv

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7

Bashir, Aneeqa. "High-performance zinc oxide thin-film transistors for large area electronics." Thesis, Imperial College London, 2011. http://hdl.handle.net/10044/1/8995.

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The increasing demand for high performance electronics that can be fabricated onto large area substrates employing low manufacturing cost techniques in recent years has fuelled the development of novel semiconductor materials such as organics and metal oxides, with tailored physical characteristics that are absent in their traditional inorganic counterparts such as silicon. Metal oxide semiconductors, in particular, are highly attractive for implementation into thin-film transistors because of their high charge carrier mobility, optical transparency, excellent chemical stability, mechanical st

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8

Sechogela, Thulaganyo P. "Vanadium dioxide nanocomposite thin film embedded in zinc oxide matrix as tunable transparent conductive oxide." Thesis, University of the Western Cape, 2013. http://hdl.handle.net/11394/4529.

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Philosophiae Doctor - PhD<br>This project is aimed at fabricating a smart material. Zinc oxide and vanadium dioxide have received a great deal of attention in recent years because they are used in various applications. ZnO semiconductor in particular has a potential application in optoelectronic devices such as light emitting diodes (LED), sensors and in photovoltaic cell industry as a transparent electrode. VO2 also has found application in smart windows, solar technology and infrared smart devices. Hence the need to synthesis or fabricate a new smart material using VO2 and an active ZnO base

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9

Thapa, Sunil. "Defects and Ferromagnetism in Transition Metal Doped Zinc Oxide." Bowling Green State University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1467319340.

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10

Elzwawi, Salim Ahmed Ali. "Cathodic Arc Zinc Oxide for Active Electronic Devices." Thesis, University of Canterbury. Electrical and Computer Engineering, 2015. http://hdl.handle.net/10092/10852.

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The filtered cathodic vacuum arc (FCVA) technique is a well established deposition method for wear resistant mechanical coatings. More recently, this method has attracted attention for growing ZnO based transparent conducting films. However, the potential of FCVA deposition to prepare ZnO layers for electronic devices is largely unexplored. This thesis addresses the use of FCVA deposition for the fabrication of active ZnO based electronic devices. The structural, electrical and optical characteristics of unintentionally doped ZnO films grown on different sapphire substrates were systematically

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Morales, Hector Roberto. "Development and integration of thin film zinc oxide integral resistors in SOP." Thesis, Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/19908.

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12

Ortel, Marlis [Verfasser]. "Film growth and electrical properties of solution processed zinc oxide in thin film transistors / Marlis Ortel." Bremen : IRC-Library, Information Resource Center der Jacobs University Bremen, 2013. http://d-nb.info/1037012801/34.

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13

Cretu, V., V. Postica, N. Ababii, et al. "Ethanol Sensing Performances of Zinc-doped Copper Oxide Nano-crystallite Layers." Thesis, Sumy State University, 2015. http://essuir.sumdu.edu.ua/handle/123456789/42506.

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The synthesis via chemical solutions (aqueous) (SCS) wet route is a low-temperature and cost-effective growth technique of high crystalline quality oxide semiconductors films. Here we report on morphology, chemical composition, structure and ethanol sensing performances of a device prototype based on zincdoped copper oxide nanocrystallite layer. By thermal annealing in electrical furnace for 30 min at temperatures higher than 550 ˚C, as-deposited zinc doped Cu2O samples are converted to tenorite, ZnxCu1-xOy, (x=1.3wt%) that demonstrate higher ethanol response than sensor structures based on sa

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14

Faber, Hendrik Andreas [Verfasser], and Marcus [Akademischer Betreuer] Halik. "Solution Processed Zinc Oxide Thin-Film Transistors / Hendrik Andreas Faber. Betreuer: Marcus Halik." Erlangen : Universitätsbibliothek der Universität Erlangen-Nürnberg, 2013. http://d-nb.info/1034425757/34.

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Mailoa, Jonathan P. "Anti-reflection zinc oxide nanocones for higher efficiency thin-film silicon solar cells." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/77250.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged from student submitted PDF version of thesis.<br>Includes bibliographical references (p. 77-80).<br>Thin film silicon solar cells, which are commonly made from microcrystalline silicon ([mu]c-Si) or amorphous silicon (a-Si), have been considered inexpensive alternatives to thick polycrystalline silicon (polysilicon) so

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16

Baran, Andre. "Chemical bath deposited zinc cadmium sulfide and sputter deposted [sic] zinc oxide for thin film solar cell device fabrication." [Gainesville, Fla.] : University of Florida, 2009. http://purl.fcla.edu/fcla/etd/UFE0022644.

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Jeong, Yongwoo. "Zinc oxide thin film transistors." 2007. http://proquest.umi.com/pqdweb?did=1320961681&sid=10&Fmt=2&clientId=39334&RQT=309&VName=PQD.

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Thesis (M.S.)--State University of New York at Buffalo, 2007.<br>Title from PDF title page (viewed on Nov. 13, 2007) Available through UMI ProQuest Digital Dissertations. Thesis adviser: Anderson, Wayne A. Includes bibliographical references.

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18

Li, Bo-Wei, and 李柏緯. "Photocatalyses of Zinc Oxide Nanotip/Titanium Oxide Film Heterojunctions." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/69527432345800335229.

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碩士<br>國立中山大學<br>電機工程學系研究所<br>98<br>The length of ZnO nanotip can be controlled by the deposition time, and the crystal of ZnO nanotip can be enhanced by a thermal annealing at 300oC in this study.The thickness of TiO2 on ITO/glass also can be controlled by the deposition time in this investigate. There are three major parts in this study : 1. (1). The control of thickness of TiO2 film and length of ZnO nanotip and (2). the difference of their photocatalytic activities are two major parts. 2. The relationship between the surface area and the photocatalytic activities of TiO2 powder (P25) an

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19

Heineck, Daniel Philip. "Zinc tin oxide thin-film transistor circuits." Thesis, 2008. http://hdl.handle.net/1957/9975.

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The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO) as the channel layer. ZTO, in contrast to indium- or gallium-based amorphous oxide semiconductors (AOS), is perceived to be a more commercially viable AOS choice due to its low cost and ability to be deposited via DC reactive sputtering. In the absence of an acceptable ZTO wet etch process, a plasma-etching process using Ar/CH₄ is developed for both 1:1 and 2:1 ZTO compositions. An Ar/CH₄ plasma etch process is also designed for in

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20

Yung-HaoLin and 林詠濠. "Optimized Indium Gallium Zinc Oxide Films Applied to Thin-Film Transistors." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/m5ft5q.

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博士<br>國立成功大學<br>微電子工程研究所<br>104<br>In the research, the indium gallium zinc oxide (IGZO) films and the indium gallium zinc aluminum oxide (IGZAO) films were deposited using the magnetron radio frequency (RF) co-sputtering system. The electrical characteristics of the IGZO films and the IGZAO films were analyzed and investigated under various aging times. The thin-film transistors (TFTs) were patterned by using standard photolithography processes. The IGZO films and the IGZAO films were the channel layers and applied to the TFTs. The TFTs becoming switches were widely used in active matrix liqu

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21

Huang, Kuang-Lu, and 黃匡祿. "Amorphous Indium-Gallium-Zinc Oxide Film Ultraviolet Sensor." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/21522796958012237540.

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碩士<br>國立中興大學<br>物理學系所<br>103<br>In our research, a light sensor was developed by using indium gallium zinc oxide thin films. When IGZO thin films absorbed UV light, the dissociation of electron-hole pairs in the films occurred. This leaded to the change of the electrical property of the films. So the purpose of light detection could be achieved by measuring the electrical property of the films. We first discussed the influence of different thickness of the films. When the thickness of the film was 115 nm, there was the highest conversion efficiency (Efficiency, η) which was about 23924 irradia

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Hsiao, Wei-Chih, and 蕭偉志. "Ti-doped Zinc Tin Oxide Thin Film Transistor." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/06620977321865715282.

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碩士<br>國立中正大學<br>光機電整合工程所<br>98<br>In this thesis, we use titanium doped zinc tin oxide (Ti-doped ZTO) transparent thin film as a semiconductor layer to fabricated thin film transistors. To preparing Ti-doped ZTO target to controlled TiO2 content, and used pulsed laser deposition (PLD) system to growth Ti-doped ZTO thin films on silica/silicon (SiO2/Si) substrate by controlling laser pulse energy, laser repetition rate, and O2 gas flow. We fabricated bottom gate thin film transistors for Ti-doped ZTO thin film as channel material and measured the I-V characteristics. To compared different TiO2

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Lin, Yu-De, and 林雨德. "Radio Frequency Sputtered Zinc Oxide Thin Film Transistors." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/58263100540134204654.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>100<br>The RF-sputtered ZnO films are optimized by deposition parameters and annealing processes. The deposition temperature, RF-power and Ar/O2 ratio are changed, and the best deposition parameters are the sample H-50 in Table 3.5. The best annealing conditions for a high Hall mobility ZnO film are annealing in air at 300°C for 0.5 hour. Two methods are used to improve the performance of ZnO-TFT by reducing the surface roughness of the ZnO layer, decreasing the ZnO active layer thickness and changing gate insulator. The result of decreasing the thickness of ZnO lay

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Song, Yue-Pu, and 宋岳璞. "Fabrication of p-Type Zinc Oxide Thin Film." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/21002664977947235524.

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碩士<br>大同大學<br>光電工程研究所<br>101<br>The development of transparent ZnO and implementation in CMOS devices is imminent with the continual growth of transparent electronics, where p-type ZnO is required. In the study described in this paper, p-type ZnO thin film is successfully fabricated by using thin film Zn3N2 as the precursor in a rapid and low temperature process, featured with low resistivity, high carrier concentration, and high carrier mobility. Thanks to the low temperature process, such thin film can be implemented on low temperature substrates and the fabrication cost can be reduced signi

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Kekuda, Dhananjaya. "Property Modulation Of Zinc Oxide Through Doping." Thesis, 2007. https://etd.iisc.ac.in/handle/2005/465.

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Semi conductors are of technological importance and attracted many of the re-searchers. ZnO belongs to the family of II-VI semiconductors and has material properties well suitable to UV light emitters, varistors, Schottky diodes, gas sensors, spintronics, ferroelectric devices and thin film transistors. It has been considered as a competitor to GaN, which belongs to the family of III-V semiconductors. This is due to the fact that ZnO of high quality can be deposited at lower growth temperatures than GaN, leading to the possibility of transparent junctions on less expensive substrates such as g

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Kekuda, Dhananjaya. "Property Modulation Of Zinc Oxide Through Doping." Thesis, 2007. http://hdl.handle.net/2005/465.

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Semi conductors are of technological importance and attracted many of the re-searchers. ZnO belongs to the family of II-VI semiconductors and has material properties well suitable to UV light emitters, varistors, Schottky diodes, gas sensors, spintronics, ferroelectric devices and thin film transistors. It has been considered as a competitor to GaN, which belongs to the family of III-V semiconductors. This is due to the fact that ZnO of high quality can be deposited at lower growth temperatures than GaN, leading to the possibility of transparent junctions on less expensive substrates such as g

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Huang, Jaine-Huai, and 黃建槐. "Preparation of a sol-gel doped zinc oxide, copper, iron, nickel, zinc film and investigate the effect of dopant on the zinc oxide thin film." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/90985066295488321494.

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碩士<br>義守大學<br>材料科學與工程學系<br>104<br>A sol-gel method was used to fabricate several ZnO alloying thin films on the SS41 iron substrate, in which the iron substrate was pretreated at 500oC for 15 min in air before coating. As to these alloying oxides like CuyO, NiO, FeOy, and ZnO, their chemical precursors were nitrates, and there compositions were ranged from 0.1-10.0 mol%. Through different oxide alloying, and sintering atmosphere plus temperature, physical properties of sintered specimens including microstructures, crystal structures, and electrical properties were determined. In the ZnO- CuyO

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Wei, Fanjie. "Aluminum Doped Zinc Oxide Thin Film for Organic Photovoltaics." Thesis, 2010. http://hdl.handle.net/1807/24651.

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Aluminum Doped Zinc Oxide (AZO) produced by radio frequency (RF) magnetron sputtering is thought to be the prospective replacement of the de facto standard indium tin oxide (ITO) anode in organic solar cells. In order to achieve a proper resistivity and transmittance of AZO thin film compared to ITO, a systematic study was done to optimize the sputtering conditions. In this work, two primary parameters: target-substrate distance and sputtering power, were optimized, and a optimized film thickness was determined. A poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PC

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Chiang, Kuo-Chen, and 江國禎. "Amorphous Indium-Gallium-Zinc Oxide Film Ozone Gas Sensor." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/13292307187691409537.

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碩士<br>國立中興大學<br>奈米科學研究所<br>102<br>In the experiment, indium gallium zinc oxide (IGZO) film was used for the ozone gas sensor. Because the adsorption and desorption of ozone can cause variation of the electrical properties of IGZO film,we discussed the relation between IGZO electrical properties and ozone concentration. First, we find that the IGZO film thickness of 65 nm by sputtering at room temperature with 200 oC for 30 minutes annealing, has better quality,stability and repeatability.We use the UV-LED (Ultraviolet-Light Emitting Diode) instead of general manner heating with th

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Chuang, Hsiang-jen, and 莊翔荏. "The supercritical fluid treatment of zinc oxide thin film." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/99293211501672260356.

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碩士<br>國立臺南大學<br>材料科學系碩士班<br>101<br>The purpose of this study is to investigate the supercritical fluid (SF) treatment of zinc oxide thin film. The influence of the SF treatment on the lattice defects as well as the surface morphology of zinc oxide thin film was explored. Experimental results obtained are compared with those obtained from heat treatment of zinc oxide. The results of this study showed that the SF treatment of zinc oxide films is feasible and flexible. ZnO thin films have a porous surface without any fragmentation after SF treatment. Different effects on lattice defects, i.e. eit

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YANG, JHIH-REN, and 楊智仁. "Zinc oxide thin film devices prepared by magnetron sputter." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/248kpf.

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碩士<br>明志科技大學<br>電子工程系碩士班<br>107<br>In this research, devices of aluminum-doped zinc oxide (AZO) were prepared by suitable thin film process. The technology of magnetron sputter was used to fabricate thin films of AZO and hafnium dioxide (HfO2). The characteristics of films were modulated by sputtering process parameters. Rapid thermal process (RTP) was used to improve the electrical properties of AZO film. There are three sections in this study. First, the design of device structure and process will be discussed. The second section addresses the characteristics of AZO films process parameter o

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Ren, Tingting. "Morphology and optical property control of electrodeposited zinc oxide /." 2006. http://collections.mun.ca/u?/theses,85163.

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Chu, Hung-Wei, and 褚宏偉. "The Preparation, Characterization and Electrocatalytic Behavior of Zinc Oxide/ Zinchexacyanoferrate Hybrid Film and Zinc Oxide/Zinchexacyanoferrate/Ruthenium Oxide Hexacyanoferrate Modified Electrodes." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/wphsy3.

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碩士<br>國立臺北科技大學<br>化學工程研究所<br>95<br>Part 1. An electroactive polynuclear hybrid films of zinc oxide and zinc hexacyanoferrate (ZnO/ZnHCF) have been deposited on electrode surfaces from H2SO4 solution containing Zn(NO3)2 and K3[Fe(CN)6] by repetitive potential cycling method. Simultaneous cyclic voltammetry and electrochemical quartz crystal microbalance (EQCM) measurements demonstrate the steady growth of hybrid film. There are two redox couples present in voltammograms of hybrid film and it is obvious in the case of pH 2. Surface morphology of the present hybrid film was investigated using sca

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Chiang, Hai Q. "Development of zinc tin oxide-based transparent thin-film transistors." Thesis, 2003. http://hdl.handle.net/1957/30002.

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The focus of this thesis involves development of highly transparent, n-channel, accumulation- mode thin-film transistors employing a zinc tin oxide (ZTO) channel layer. ZTO-based transparent thin-film transistors (TTFTs) show improved device performance compared to ZnO-based TTFTs. An estimated peak effective mobility for these devices as high as ~100 cm² V⁻¹sec⁻¹ has been observed, although effective mobilities in the range of 20-50 cm²V⁻¹sec⁻¹ are more common. This performance inconsistency may be due, in part, to the large device dimensions employed in developmental test structures and/or t

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Yang, C. C., and 楊志成. "The study on processing of thick-film zinc oxide varistors." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/82007891211049387036.

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碩士<br>中原大學<br>物理學系<br>88<br>Until now, the sintering temperature of the ZnO varistor is still higher than 1000℃ by the conventional or microwave process. In this thesis, with 1∼30 wt% PbSiO3 as an additive to the base powder, the conventional process was carried out to produce the varistors, and the results were compared with those via microwave sintering. Although the duration of the microwave sintering is shorter than that of the conventional sintering, the temperature of the microwave sintering is very high and the deduced nonlinear exponent is only 30. For develop a multilayer ceramic vari

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Hsieh, Cheng-Kang, and 謝振剛. "Characteristics of transparent and conductive aluminum zinc oxide thin film." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/20899995915943894960.

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Ma, Zhong-Min, and 馬忠民. "Study on Nitrogen Doped Zinc Oxide (ZnO:N) Thin Film Transistors." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/6hj2hr.

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Sun, Jie Jackson Thomas N. "PECVD, spatial ALD, and PEALD zinc oxide thin film transistors." 2008. http://etda.libraries.psu.edu/theses/approved/PSUonlyIndex/ETD-3151/index.html.

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Lin, Tsung-Te, and 林宗德. "Study on Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/03653353819844720025.

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碩士<br>明新科技大學<br>電子工程研究所<br>99<br>In this research, Indium Gallium Zinc Oxide (IGZO) thin film transistors deposited by DC sputtering system with staggered and coplanar structure. The electrical properties of thickness and material effect were studied by changing the thickness of gate insulator and active layer, materials of gate insulator, component of IGZO films, different of structure and source/drain materials during deposition process. According to the results, we found the best properties that gate insulator with 150 nm by SiNx, active layer with 50 nm by IGZO component of 1:1:1:4, source

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CHEN, CHUN-YUAN, and 陳俊源. "Study on Vertical Indium-Gallium-Zinc Oxide Thin-Film Transistors." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/98x9mq.

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碩士<br>國立暨南國際大學<br>電機工程學系<br>107<br>In this work, we study on the fabrication of vertical indium-gallium-zinc oxide thin-film transistors. A multi-channel vertical IGZO TFTs were designed and fabricated. The metal Mo layers was sputtered as electrode and IGZO thin film active layer was deposited by pulsed-DC sputter. The IGZO thin film was deposited in 3% and 5% oxygen/argon mixed gas flow. The thickness of IGZO were about ~25-100nm. Then the devices were fabricated with two different structure to reduce the terminal parasitic capacitance. With Hall effect measurement, the carrier concentrati

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Chia-HuiLu and 呂嘉輝. "Zinc Oxide Thin Film MEMS Gas Sensor with Different Structure." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/na42xn.

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Pan, Shih-Lin, and 潘仕霖. "The Optimization of Cuprous Oxide/Zinc Oxide Thin Film Properties Prepared by Sputtering Method." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/73726598539249034867.

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碩士<br>國立高雄第一科技大學<br>電機工程研究所碩士班<br>102<br>In this thesis, zinc oxide and cuprous oxide film was sputtering on glass using sputtering system, and their characteristics was optimized by the Taguchi method. A L9 (34) orthogonal table with control factors sputtering power (A), argon oxygen gas flow ratio (B), working pressure (C), and sputtering time (D), each of which has three level of values, was designed for sputtering experiment. XRD analysis, spectrometer, and four-point probe measurements were adopted to characterized the film, and followed by Taguchi method and gray relational analysis to f

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Huang, Hsiu-tse, and 黃琇澤. "Investigation zinc oxide thin film and doped alumiunm thin film prepared by reactive sputtering." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/07383133552603131173.

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Lee, Chen-Guan 1982. "Solution-processed zinc-tin oxide thin-film transistors and circuit applications." Thesis, 2011. http://hdl.handle.net/2152/ETD-UT-2011-05-2794.

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Amorphous oxide semiconductors are of potential interest in the display industry due to their high carrier mobility, transparency at visible wavelengths and excellent operational stability. In this dissertation, n-channel zinc-tin oxide thin-film transistors are fabricated based on a solution-based deposition approach, which allows low fabrication cost and high throughput. The effects of device configuration and process conditions on transistor performance are investigated, and circuit applications including inverters, amplifiers, and ring oscillators are demonstrated. Charge transport in the

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張旻瑋. "With different substrate deposition of zinc oxide transparent conductive film studies." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/22329978781985140281.

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碩士<br>建國科技大學<br>電機工程系暨研究所<br>101<br>In this study, the use of RF magnetron sputtering at four different substrates (Glass, a-SiC/glass, a-Si/glass, Si) deposition of aluminum zinc oxide (AZO) transparent conductive film, and explore different RF power, heat effects. Using the spectrophotometer (UV / VIS) analysis of the optical properties of thin films, X-ray diffraction (XRD) analysis of crystal structure, electrical properties, the use of the Hall effect device (Hall Effect) measuring resistivity, carrier concentration and electron mobility . The a-Si substrate, a working pressure of the spu

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Wang, Yu-Sheng, and 王裕勝. "Wet Process and Materials Analysis of Indium Gallium Zinc Oxide Film." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/57881203872975453146.

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碩士<br>明志科技大學<br>化學工程研究所<br>101<br>This study investigates the organic acid solution on the indium gallium zinc oxide (hereinafter referred to as IGZO) thin-film electrochemical reaction, expected of this study, to increase understanding of the characteristics IGZO film surface. In this study, the sol - gel method and hydrothermal synthesis method configure the IGZO precursor solution, and the use of blade coating method IGZO precursor solution is applied to the PET, after the film was confirmed by XRD amorphous phase and then explore the organic acid solution on the amorphous IGZO electrochemi

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王脩華. "The study on characteristics of Zinc Tin Oxide Thin Film Transistor." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/51380296924883485759.

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碩士<br>國立彰化師範大學<br>光電科技研究所<br>102<br>We have studied thermal stability,environment stability,physical characteristics and electrical characteristics of used the sol - gel method to make bottom-gate, bottom contact zinc–tin oxide(ZTO) thin-film transistors (TFTs). We found that all device characteristics will improve to the best state in 20 days. The Saturation mobilities of the TFTs with 0.2M,0.3M and 0.4M are 2.1 cm2v-1s-1,1.98 cm2v-1s-1 and 2.73 cm2v-1s-1. The on-off raito of 0.2M ZTO TFT increases by more than 3 orders in 30 days,and the change is geater in low concentrations of devices,whic

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Liu, Po-chang, and 劉柏璋. "Preparation and analysis of the nitrogen-doped zinc oxide thin film." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/61346166685907465842.

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碩士<br>大同大學<br>光電工程研究所<br>103<br>The main purpose of this paper is to develop a long-term to maintain the zinc oxide semiconductor thin films of P-type conductivity. Using DC sputtering system to depositing zinc nitride film, and rapid thermal annealing during oxidation, in the manner of doing precursor oxide doped. This paper discusses the process at different pressures, zinc nitride film structures influenced by the environment and by circumstances different annealing temperature and time again by Raman and XPS analysis of the film in the case of nitrogen. The results showed that high tempera

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"Environmental Sensing Applications of Zinc Oxide Based Film Bulk Acoustic Resonator." Doctoral diss., 2011. http://hdl.handle.net/2286/R.I.8927.

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abstract: Different environmental factors, such as ultraviolet radiation (UV), relative humidity (RH) and the presence of reducing gases (acetone and ethanol), play an important role in the daily life of human beings. UV is very important in a number of areas, such as astronomy, resin curing of polymeric materials, combustion engineering, water purification, flame detection and biological effects with more recent proposals like early missile plume detection, secure space-to-space communications and pollution monitoring. RH is a very common parameter in the environment. It is essential not only

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Chen, Wen-Hua, and 陳文華. "Growth of Zinc Oxide Transparent Conductive Film by RF Magnetron Sputtering." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/45633610755800844278.

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碩士<br>國立成功大學<br>化學工程學系碩博士班<br>93<br>Radio-frequency magnetron sputtering method has been employed to deposit Aluminum-doped zinc oxide. The mechanism of doping by incorporating Aluminum in zinc oxide was studied. Besides, attempts have been made to deposit at right condition to get zinc oxide film with high conductivity and high transparency in visible light range. 　Aluminum incorporation was demonstrated to be able to enhance the conductivity of zinc oxide significantly. Various properties of Aluminum doped zinc oxide were studied by varying the deposition conditions. Aluminum doped zinc oxi

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