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Artigos de revistas sobre o tema "GaAs-4H"

Autor: Grafiati

Publicado: 29 de março de 2025

Última modificação: 31 de julho de 2025

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1

Cheiwchanchamnangij, Tawainan, Thomas Birkel, Walter R. L. Lambrecht, and Al L. Efros. "GaAs Nanowires: A New Place to Explore Polytype Physics." Materials Science Forum 717-720 (May 2012): 565–68. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.565.

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Recently, polytypism has been observed in nanowires in materials, for which normally only one crystal structure is stable. For example, GaAs, nanowires can have wurtzite or mixed zincblende/wurtzite. Here we provide band structure parameters for wurzite and 4H GaAs and use them for modeling the nanowire electronic states. The band gap, crystal field splitting, and its strain dependence, as well as the effective mass parameters are calculated using the quasiparticle self-consistent GW method. The nanowire electronic states are obtained in the envelope function approximation within a simplified

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2

Iype, Preethi Elizabeth, V. Suresh Babu, and Geenu Paul. "Thermal and Electrical Performance of AlGaAs/GaAs based HEMT device on SiC substrate." Journal of Physics: Conference Series 2070, no. 1 (2021): 012057. http://dx.doi.org/10.1088/1742-6596/2070/1/012057.

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Abstract In this paper investigation on electrical and thermal performance of the AlGaAs/GaAs HEMT device is carried out by comparing the device grown on substrates like 4H-SiC and Sapphire. The investigation was carried out based on Silvaco TCAD Atlas simulation. The DC characteristics of the device with varying ambient temperature were evaluated. A deterioration of drain current from 0.9 mA to 0.5 mA is observed as temperature rises from 300K to 500K on 4H-SiC substrate. The HEMT grown on 4H-SiC substrate has a high power dissipation, resulting in reduced temperature compared to sapphire sub

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3

Asfour, Rawad, Salam K. Khamas, Edward A. Ball, et al. "On-Chip Circularly Polarized Circular Loop Antennas Utilizing 4H-SiC and GaAs Substrates in the Q/V Band." Sensors 24, no. 2 (2024): 321. http://dx.doi.org/10.3390/s24020321.

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This paper presents a comprehensive assessment of the performance of on-chip circularly polarized (CP) circular loop antennas that have been designed and fabricated to operate in the Q/V frequency band. The proposed antenna design incorporates two concentric loops, with the outer loop as the active element and the inner loop enhancing the CP bandwidth. The study utilizes gallium arsenide (GaAs) and silicon carbide (4H-SiC) semiconductor wafer substrates. The measured results highlight the successful achievement of impedance matching at 40 GHz and 44 GHz for the 4H-SiC and GaAs substrates, resp

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4

Liang, J., S. Shimizu, M. Arai, and N. Shigekawa. "Determination of Band Structure at GaAs/4H-SiC Heterojunctions." ECS Transactions 75, no. 9 (2016): 221–27. http://dx.doi.org/10.1149/07509.0221ecst.

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5

Tongay, S., T. Schumann, and A. F. Hebard. "Graphite based Schottky diodes formed on Si, GaAs, and 4H-SiC substrates." Applied Physics Letters 95, no. 22 (2009): 222103. http://dx.doi.org/10.1063/1.3268788.

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6

Ghivela, Girish Chandra, Joydeep Sengupta, and Monojit Mitra. "Ka band noise comparison for Si, Ge, GaAs, InP, WzGaN, 4H-SiC-based IMPATT diode." International Journal of Electronics Letters 7, no. 1 (2018): 107–16. http://dx.doi.org/10.1080/21681724.2018.1460869.

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7

Sriram, S., A. Ward, J. Henning, and S. T. Allen. "SiC MESFETs for High-Frequency Applications." MRS Bulletin 30, no. 4 (2005): 308–11. http://dx.doi.org/10.1557/mrs2005.79.

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AbstractSignificant progress has been made in the development of SiC metal semiconductor field-effect transistors (MESFETs) and monolithic microwave integrated-circuit (MMIC) power amplifiers for high-frequency power applications. Three-inch-diameter high-purity semi-insulating 4H-SiC substrates have been used in this development, enabling high-volume fabrication with improved performance by minimizing surface- and substrate-related trapping issues previously observed in MESFETs. These devices exhibit excellent reliability characteristics, with mean time to failure in excess of 500 h at a junc

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8

Sharma, Sonia, Rahul Rishi, Chander Prakash, Kuldeep K. Saxena, Dharam Buddhi, and N. Ummal Salmaan. "Characterization and Performance Evaluation of PIN Diodes and Scope of Flexible Polymer Composites for Wearable Electronics." International Journal of Polymer Science 2022 (September 13, 2022): 1–10. http://dx.doi.org/10.1155/2022/8331886.

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Different semiconductor materials have been used for the fabrication of PIN diodes such as Si, Ge, GaAs, SiC-3C, SiC-4H, and InAs. These different semiconductor materials show different characteristics and advantages such as SiC-4H is ultrafast switch. But, when flexible polymers composites like Si-nanomembranes, polyethylene terephthalate (PET), and biodegradable polymer composite like carbon nanotubes (CNT) are used for fabrication, the device has the capability to switch from rigid electronic devices to flexible and wearable electronic devices. These polymer composites’ outstanding characte

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9

Ghivela, Girish Chandra, Joydeep Sengupta, and Monojit Mitra. "Space Charge Effect of IMPATT Diode Using Si, Ge, GaAs, InP, WzGaN and 4H-SiC at Ka-Band." IETE Journal of Education 58, no. 2 (2017): 61–66. http://dx.doi.org/10.1080/09747338.2017.1378132.

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10

Sedlačková, Katarína, Bohumír Zat'ko, Andrea Šagátová, Vladimír Nečas, Pavol Boháček, and Mária Sekáčová. "Comparison of semi-insulating GaAs and 4H-SiC-based semiconductor detectors covered by LiF film for thermal neutron detection." Applied Surface Science 461 (December 2018): 242–48. http://dx.doi.org/10.1016/j.apsusc.2018.05.121.

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11

Vincent, Laetitia, Marcel A. Verheijen, Wouter Peeters, et al. "Epitaxy of Hexagonal Ge-2H : Lessons from in Situ TEM Observations." ECS Meeting Abstracts MA2024-02, no. 32 (2024): 2340. https://doi.org/10.1149/ma2024-02322340mtgabs.

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Silicon and Germanium crystallize in the cubic diamond structure 3C with which they dominate definitely the electronics. Playing on crystal phases in semiconductors occurs to be a valuable mean of electronic band engineering. Remarkably, the hexagonal 2H phase of SiGe turns to get a direct band gap with light emission capabilities within a specific composition range (Si<35%). This material holds the promise to fill the gap between electronics and photonics industry using group IV semiconductors. We use GaAs NWs with the wurtzite structure as a template to create both (1) core/shell and (2)

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12

Mouneyrac, David, John G. Hartnett, Jean-Michel Le Floch, Michael E. Tobar, Dominique Cros, and Jerzy Krupka. "Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H–SiC semiconductors under light illumination at cryogenic temperatures." Journal of Applied Physics 108, no. 10 (2010): 104107. http://dx.doi.org/10.1063/1.3514009.

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13

Moore, Karen, and Robert J. Trew. "Radio-Frequency Power Transistors Based on 6H- and 4H-SiC." MRS Bulletin 22, no. 3 (1997): 50–56. http://dx.doi.org/10.1557/s0883769400032760.

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In recent years, SiC has received a great deal of attention as a nearly ideal material for the fabrication of high-speed, high-power transistors. The high electric breakdown field of 3.8 × 106 V/cm, high saturated electron drift velocity of 2 × 107 cm/s, and high thermal conductivity of 4.9 W/cm K indicate SiC's potential for high-power, high-frequency operation. A wide bandgap should also allow SiC field-effect transistors (FETs) to have high radio-frequency (rf) output power at high temperatures.These material qualities have been verified through outstanding device performance. Recent result

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14

Chakravorty, Anusmita, Alexandre Boulle, Aurélien Debelle, et al. "Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC." Journal of Applied Physics 136, no. 3 (2024). http://dx.doi.org/10.1063/5.0205284.

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Strain engineering using ion beams is a current topic of research interest in semiconductor materials. Synchrotron-based high-resolution x-ray diffraction has been utilized for strain-depth analysis in GaAs irradiated with 300 keV Ar and 4H-SiC and GaAs irradiated with 100 MeV Ag ions. The direct displacement-related defect formation, anticipated from the elastic energy loss of Ar ions, can well explain the irradiation-induced strain depth profiles. The maximum strain in GaAs is evaluated to be 0.88% after Ar irradiation. The unique energy loss depth profile of 100 MeV Ag (swift heavy ions; SH

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15

Das, Subhashis, Nirosh M. Eldose, Hryhorii Stanchu, et al. "Epitaxial growth and characterization of GaAs (111) on 4H-SiC." Journal of Vacuum Science & Technology A 42, no. 4 (2024). http://dx.doi.org/10.1116/6.0003454.

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SiC is an indirect bandgap semiconductor with material properties ideal for power electronics but not so much as an optical emitter. Meanwhile, gallium arsenide (GaAs) is a material known for high-performance optical devices due to its direct bandgap and carrier lifetime. Integrating GaAs with silicon carbide (SiC) can result in the best of both materials. However, integrating the two presents a significant challenge due to the large lattice mismatch between the two materials. In this paper, we investigate the growth of high-quality GaAs directly on 4H-SiC and on AlAs/4H-SiC substrates. The th

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16

Liang, Xinchao, Chuang Hou, Zenghui Wu, Zitong Wu та Guoan Tai. "Multilayer α′-4H-Borophene Growth on Gallium Arsenide towards High-Performance Near-Infrared Photodetector". Nanotechnology, 8 лютого 2023. http://dx.doi.org/10.1088/1361-6528/acba1e.

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Abstract Multilayer borophene was predicted to have a similar semiconductor property to its monolayer arise from the weak van der Waals interactions between the layers. Besides, multilayer borophene has a higher carrier mobility than monolayer ones, so it is placed great hopes in applications of photoelectric and photovoltaic devices. However, its preparation and application in experiments of multilayer borophene are still lacking. Here, multilayer α′-4H-borophene was synthesized on semiconducting n-type GaAs substrates using NaBH4 source as precursor and hydrogen as the carrier gas under cont

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17

Tuominen, M., R. Yakimova, R. C. Glass, T. Tuomi, and E. Janzén. "Investigation of Structural Defects in 4H SiC Wafers." MRS Proceedings 339 (1994). http://dx.doi.org/10.1557/proc-339-729.

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ABSTRACTFor high-power device applications SiC has better physical and electronic properties than the traditional semiconductor materials Si and GaAs. In this work, structural defects of 4H SiC wafers have been studied and partly compared with results from a previous study of 6H material. Optical microscopy, scanning electron microscopy, high-resolution X-ray diffraction and synchrotron X-ray topography were used for structural studies of 4H SiC.Optical micrographs show micropipes and larger specific defects - tubes and cracks. X-ray rocking curve peaks are broad and split revealing the mosaic

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18

"Determination of Band Structure at GaAs/4H-SiC Heterojunctions." ECS Meeting Abstracts, 2016. http://dx.doi.org/10.1149/ma2016-02/32/2095.

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19

Palmour, John W., C. H. Carter, C. E. Weitzel, and K. J. Nordquist. "High Power and High Frequency Silicon Carbide Devices." MRS Proceedings 339 (1994). http://dx.doi.org/10.1557/proc-339-133.

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ABSTRACTThe breakdown electric field of 4H-SiC as a function of doping was measured using pn junction rectifiers, with maximum voltages of 1130 V being achieved. 4H-SiC vertical power MOSFET structures have shown specific on-resistances of 33 mΩ-cm2 for devices capable of blocking 150 V. A current density of 100 A/cm2 was achieved at a drain voltage of 3.3 V. Thyristors fabricated in SiC have also shown blocking voltages of 160 V and 100 A/cm2 at 3.0 V. High temperature operation was measured, with the power MOSFETs operating to 300°C, and the thyristors operating to 500°C.Submicron 6H- and 4H

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20

Coleman, J. C., G. L. Harris, and D. B. Poker. "Beta Silicon Carbide Pn Junction Diodes." MRS Proceedings 423 (1996). http://dx.doi.org/10.1557/proc-423-207.

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AbstractBeta silicon carbide (3C-SiC) diodes have been fabricated using ion implantation as the selective doping technique. Previous work on 3C-SiC diodes have exhibited properties such as low reverse breakdown voltages and high ideality factors. Also, 6H and 4H SiC diodes have been reported. This paper studies a different procedure to produce better 3C-SiC diodes for use in the electronics industry. Current versus voltage, capacitance versus voltage and temperature versus voltage tests were conducted on the devices.Isolation between devices is a prominent concern when building integrated circ

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21

Tucker, J. B., R. A. Beaupre, A. P. Zhang, et al. "Electrical Instability Suppression in 4H-SiC Power MESFETs." MRS Proceedings 742 (2002). http://dx.doi.org/10.1557/proc-742-k7.4.

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ABSTRACTSiC has attracted great interest for high power microwave applications because of its superior intrinsic properties compared to Si and GaAs. Steady demonstrations of increasingly higher power handling capability have been achieved in recent years. However, SiC MESFETs still suffer from significant drain current degradation under RF operation or long-term DC stress. This degradation can be recovered after long periods of relaxation or immediately by illumination under UV light, which is indicative of a trapping effect. The origin of this effect has been attributed to either electron tra

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22

Xie, Han, Ru Jia, Yonglin Xia, et al. "An ab initio dataset of size-dependent effective thermal conductivity for advanced technology transistors." Chinese Physics B, March 6, 2025. https://doi.org/10.1088/1674-1056/adbd13.

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Abstract As the size of transistors shrinks and power density increases, thermal simulation has become an indispensable part of the device design procedure. However, existing works for advanced technology transistors use simplified empirical models to calculate effective thermal conductivity in the simulations. In this work, we present a dataset of size-dependent effective thermal conductivity with electron and phonon properties extracted from ab initio computations. Absolute in-plane and cross-plane thermal conductivity data of eight semiconducting materials (Si, Ge, GaN, AlN, 4H-SiC, GaAs, I

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23

Srikanta, Bose, and Mazumder S.K. "Structural Simulation of a 4H-Sic Based Optically Controlled Thyristor Using a GaAs Based Optically Triggered Power Transistor and Its Application to DC-DC Boost Converter." International Journal of Electrical, Electronic and Communication Sciences 6.0, no. 12 (2012). https://doi.org/10.5281/zenodo.1333929.

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In the present simulation work, an attempt is made to study the switching dynamics of an optically controlled 4HSiC thyristor power semiconductor device with the use of GaAs optically triggered power transistor. The half-cell thyristor has the forward breakdown of 200 V and reverse breakdown of more than 1000 V. The optically controlled thyristor has a rise time of 0.14 μs and fall time of 0.065 μs. The turn-on and turn-off delays are 0.1 μs and 0.06 μs, respectively. In addition, this optically controlled thyristor is used as a control switch for the DC-DC Boost converter. The pn-

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24

Casady, J. B., A. K. Agarwal, L. B. Rowland, et al. "4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures." MRS Proceedings 483 (1997). http://dx.doi.org/10.1557/proc-483-27.

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AbstractSilicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices [1]. This paper presents an overview of SiC power devices and concludes that MOS Turn-Off Thyristor (MTOTM) is one of the most promising near term SiC switching device given its high power potential, ease of turn-off, 500°C operation and resulting reduction in cooling requirements. It is further concluded that in order to take advantage of SiC power devices, high temperature packages and components with double s

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