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Bibliografias temáticas / Gallium nitride

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Literatura científica selecionada sobre o tema "Gallium nitride"

Autor: Grafiati

Publicado: 4 de junho de 2021

Última modificação: 25 de julho de 2025

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Artigos de revistas sobre o assunto "Gallium nitride"

1

Sarkar, Sujoy, and S. Sampath. "Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control." Chemical Communications 52, no. 38 (2016): 6407–10. http://dx.doi.org/10.1039/c6cc02487d.

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A ternary, ionically conducting, deep eutectic solvent based on acetamide, urea and gallium nitrate is reported for the electrodeposition of gallium nitride/gallium indium nitride under ambient conditions; blue and white light emitting photoluminescent deposits are obtained under potential control.

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2

Dobrynin, A. V., M. M. Sletov, and V. V. Smirnov. "Luminescent properties of gallium nitride and gallium-aluminum nitride." Journal of Applied Spectroscopy 55, no. 5 (1991): 1169–71. http://dx.doi.org/10.1007/bf00658419.

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3

Al-Zuhairi, Omar, Ahmad Shuhaimi, Nafarizal Nayan, et al. "Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review." Coatings 12, no. 2 (2022): 275. http://dx.doi.org/10.3390/coatings12020275.

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Ultraviolet photodetectors have been widely utilized in several applications, such as advanced communication, ozone sensing, air purification, flame detection, etc. Gallium nitride and its compound semiconductors have been promising candidates in photodetection applications. Unlike polar gallium nitride-based optoelectronics, non-polar gallium nitride-based optoelectronics have gained huge attention due to the piezoelectric and spontaneous polarization effect–induced quantum confined-stark effect being eliminated. In turn, non-polar gallium nitride-based photodetectors portray higher efficienc

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4

Kochuev, D. A., A. S. Chernikov, R. V. Chkalov, A. V. Prokhorov, and K. S. Khorkov. "Deposition of GaN nanoparticles on the surface of a copper film under the action of electrostatic field during the femtosecond laser ablation synthesis in ammonia environment." Journal of Physics: Conference Series 2131, no. 5 (2021): 052089. http://dx.doi.org/10.1088/1742-6596/2131/5/052089.

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Abstract In this article, we show the possibility for obtaining and deposition of gallium nitride nanoparticles under the action of femtosecond laser radiation. Using the developed setup for thermal vacuum deposition of copper on silicon plates, we obtained the thin-film substrates following by the deposition of gallium nitride on them. The gallium nitride was formed by applying the femtosecond laser radiation to the gallium targets in ammonia medium. The controlled collection of ablation products following by their removal from the processing area by means of electrostatic field was used in t

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Rajan, Siddharth, and Debdeep Jena. "Gallium nitride electronics." Semiconductor Science and Technology 28, no. 7 (2013): 070301. http://dx.doi.org/10.1088/0268-1242/28/7/070301.

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6

Mendes, Marco, Jeffrey Sercel, Mathew Hannon, et al. "Advanced Laser Scribing for Emerging LED Materials." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (2011): 001443–71. http://dx.doi.org/10.4071/2011dpc-wa32.

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Lasers are becoming increasingly important in today's LED revolution and are essential for increasing the efficiency and reducing manufacturing cost of LEDs. Diode pumped solid state lasers excel in scribing horizontal type LEDs on sapphire, silicon, silicon carbide, III-nitrides (gallium nitride and aluminum nitride), as well as III-V semiconductors (gallium arsenide, gallium phosphide). These lasers are also used for dicing vertical type LEDs, which are becoming increasingly more important, often using high thermal conductivity metallic substrates such as copper, CuW and molybdenum. In this

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7

Kang, Liping, Lingli Wang, Haiyan Wang, Xiaodong Zhang, and Yongqiang Wang. "Preparation and Performance of Gallium Nitride Powders with Preferred Orientation." MATEC Web of Conferences 142 (2018): 01009. http://dx.doi.org/10.1051/matecconf/201814201009.

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The paper prepared the III-V semiconductor, hexagonal wurtzite Gallium nitride powders by calcining a gallium oxide in flowing ammonia above 900 °C (1173K). Because of the solid-state reaction process that the gallium oxide transformed to GaN through solid-state gallium oxynitrides (GaOxNy) as inter-mediates, the Gallium nitride powders which are agglomerates of tens nanometers flake crystallites retain the rod shape and grain size of raw gallium oxide and have slight (002) plane preferred orientation. The near-edge emission of Gallium nitride at 346 nm has a blue shift of 187 meV attributed t

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8

Volcheck, V. S., M. S. Baranava, and V. R. Stempitsky. "Thermal conductivity of wurtzite gallium nitride." Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 67, no. 3 (2022): 285–97. http://dx.doi.org/10.29235/1561-8358-2022-67-3-285-297.

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This paper reviews the theoretical and experimental works concerning one of the most important parameters of wurtzite gallium nitride – thermal conductivity. Since the heat in gallium nitride is transported almost exclusively by phonons, its thermal conductivity has a temperature behavior typical of most nonmetallic crystals: the thermal conductivity increases proportionally to the third power of temperature at lower temperatures, reaches its maximum at approximately 1/20 of the Debye temperature and decreases proportionally to temperature at higher temperatures. It is shown that the thermal c

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9

McLaurin, M., B. Haskell, S. Nakamura, and J. S. Speck. "Gallium adsorption onto (112̄0) gallium nitride surfaces." Journal of Applied Physics 96, no. 1 (2004): 327–34. http://dx.doi.org/10.1063/1.1759086.

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10

Grabianska, Karolina, Robert Kucharski, Tomasz Sochacki, et al. "On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals." Crystals 12, no. 4 (2022): 554. http://dx.doi.org/10.3390/cryst12040554.

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The results of basic ammonothermal crystallization of gallium nitride are described. The material is mainly analyzed in terms of the formation of stress (called stress-induced polarization effect) and defects (threading dislocations) appearing due to a stress relaxation process. Gallium nitride grown in different positions of the crystallization zone is examined in cross-polarized light. Interfaces between native ammonothermal seeds and new-grown gallium nitride layers are investigated in ultraviolet light. The etch pit densities in the seeds and the layers is determined and compared. Based on

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Teses / dissertações sobre o assunto "Gallium nitride"

1

Li, Ting. "Gallium nitride and aluminum gallium nitride-based ultraviolet photodetectors /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.

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2

Muensit, Supasarote. "Piezoelectric coefficients of gallium arsenide, gallium nitride and aluminium nitride." Phd thesis, Australia : Macquarie University, 1999. http://hdl.handle.net/1959.14/36187.

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"1998"--T.p.<br>Thesis (PhD)--Macquarie University, School of Mathematics, Physics, Computing and Electronics, 1999.<br>Includes bibliographical references.<br>Introduction -- A Michelson interferometer for measurement of piezoelectric coefficients -- The piezoelectric coefficient of gallium arsenide -- Extensional piezoelectric coefficients of gallium nitrides and aluminium nitride -- Shear piezoelectric coefficients of gallium nitride and aluminium nitride -- Electrostriction in gallium nitride, aluminium nitride and gallium arsenide -- Summary and prognosis.<br>The present work represents t

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3

Mareš, Petr. "Depozice Ga a GaN nanostruktur na křemíkový a grafenový substrát." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2014. http://www.nusl.cz/ntk/nusl-231443.

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Presented thesis is focused on the study of properties of Ga and GaN nanostructures on graphene. In the theoretical part of the thesis a problematics of graphene and GaN fabrication is discussed with a focus on the relation of Ga and GaN to graphene. The experimental part of the thesis deals with the depositions of Ga on transferred CVD-graphene on SiO2. The samples are analyzed by various methods (XPS, AFM, SEM, Raman spectroscopy, EDX). The properties of Ga on graphene are discussed with a focus on the surface enhanced Raman scattering effect. Furthermore, a deposition of Ga on exfoliated gr

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4

Cheng, Chung-choi, and 鄭仲材. "Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43278577.

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Cheng, Chung-choi. "Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43278577.

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6

Popa, Laura C. "Gallium nitride MEMS resonators." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/99296.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 2015.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 187-206).<br>As a wide band-gap semiconductor, with large breakdown fields and saturation velocities, Gallium Nitride (GaN) has been increasingly used in high-power, high-frequency electronics and monolithic microwave integrated circuits (MMICs). At the same time, GaN also has excellent electromechanical properties, such as high acoustic velocities and low elastic losses. Together with a strong piezoelectric coupling, these q

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7

Allums, Kimberly K. "Proton radiation and thermal stabilty [sic] of gallium nitride and gallium nitride devices." [Gainesville, Fla.] : University of Florida, 2006. http://purl.fcla.edu/fcla/etd/UFE0013123.

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8

Holmes, Kenneth L. "Two-dimensional modeling of aluminum gallium nitride/gallium nitride high electron mobility transistor." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FHolmes.pdf.

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9

Anderson, David Richard. "Phonon-limited electron transport in gallium nitride and gallium nitride-based heterostructures, 1760-1851." Thesis, University of York, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.270104.

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Jackson, Helen C. "Effect of variation of silicon nitride passivation layer on electron irradiated aluminum gallium nitride/gallium nitride HEMT structures." Thesis, Air Force Institute of Technology, 2014. http://pqdtopen.proquest.com/#viewpdf?dispub=3629786.

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<p> Silicon nitride passivation on AlGaN\GaN heterojunction devices can improve performance by reducing electron traps at the surface. This research studies the effect of displacement damage caused by 1 MeV electron irradiation as a function of the variation of passivation layer thickness and heterostructure layer variation on AlGaN/GaN HEMTs. The effects of passivation layer thickness are investigated at thicknesses of 0, 20, 50 and 120 nanometers on AlGaN\GaN test structures with either an AlN nucleation layer or a GaN cap structures which are then measured before and immediately after 1.0 M

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Mais fontes

Livros sobre o assunto "Gallium nitride"

1

1922-, Pankove Jacques I., and Moustakas T. D, eds. Gallium nitride (GaN). Academic Press, 1998.

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2

1922-, Pankove Jacques I., Moustakas T. D, and Willardson Robert K, eds. Gallium nitride (GaN) II. Academic Press, 1999.

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3

Kizilyalli, Isik C., Jung Han, James S. Speck, and Eric P. Carlson, eds. Gallium Nitride and Related Materials. Springer Nature Switzerland, 2025. https://doi.org/10.1007/978-3-031-83056-3.

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4

Feenstra, Randall M., and Colin E. C. Wood, eds. Porous Silicon Carbide and Gallium Nitride. John Wiley & Sons, Ltd, 2008. http://dx.doi.org/10.1002/9780470751817.

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5

Ehrentraut, Dirk, Elke Meissner, and Michal Bockowski, eds. Technology of Gallium Nitride Crystal Growth. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-04830-2.

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6

B, Gil, ed. Low-dimensional nitride semiconductors. Oxford University Press, 2002.

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7

Michael, Shur, and Davis Robert F. 1942-, eds. GaN-based materials and devices: Growth, fabrication, characterization and performance. World Scientific, 2004.

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8

International Conference on Nitride Semiconductors (4th 2001 Denver, Colo.). ICNS-4: Fourth International Conference on Nitride Semiconductors, Denver, Colorado, USA, 2001 : proceedings. Wiley-VCH, 2002.

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9

Chuan, Feng Zhe, ed. III-nitride devices and nanoengineering. Imperial College Press, 2008.

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10

Vserossiĭskoe soveshchanie "Nitridy gallii︠a︡, indii︠a︡ i ali︠u︡minii︠a︡--struktury i pribory" (2nd 1998 St. Petersburg, Russia). Nitridy gallii︠a︡, indii︠a︡ i ali︠u︡minii︠a︡--struktury i pribory: Materialy 2-go vserossiĭskogo soveshchanii︠a︡, 2 ii︠u︡nii︠a︡ 1998 g., Sankt-Peterburgskiĭ gosudarstvennyĭ tekhnicheskiĭ universitet = Gallium nitride, indium nitride, aluminum nitride--structures and devices : technical digest : the 2nd Russian Workshop, June 2, 1998, St.-Petersburg State Technical University. Sankt-Peterburgskiĭ gos. tekhn. universitet, 1998.

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Capítulos de livros sobre o assunto "Gallium nitride"

1

Linares, R. C., and R. M. Ware. "Gallium Nitride." In Inorganic Reactions and Methods. John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145227.ch146.

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2

Di Paolo Emilio, Maurizio. "Gallium Nitride." In GaN and SiC Power Devices. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-50654-3_4.

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3

Schoonmaker, Richard C., Claudia E. Burton, J. Lundstrom, and J. L. Margrave. "Gallium (III) Nitride." In Inorganic Syntheses. John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470132388.ch5.

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4

Bin, Dong. "9 The Packaging Technologies for GaN HEMTs." In Gallium Nitride Power Devices. CRC Press, 2017. http://dx.doi.org/10.1201/9781315196626-10.

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5

Feenstra, R. M., and S. W. Hla. "2.3.7 GaN, Gallium Nitride." In Physics of Solid Surfaces. Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-47736-6_24.

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6

Kinski, Isabel, and Paul F. McMillan. "Gallium Nitride and Oxonitrides." In Ceramics Science and Technology. Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527631735.ch3.

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Kinski, Isabel, and Paul F. McMillan. "Gallium Nitride and Oxonitrides." In Ceramics Science and Technology. Wiley-VCH Verlag GmbH & Co. KGaA, 2014. http://dx.doi.org/10.1002/9783527631940.ch15.

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8

Chowdhury, Srabanti. "Vertical Gallium Nitride Technology." In Power Electronics and Power Systems. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-43199-4_5.

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9

Di Paolo Emilio, Maurizio. "Gallium Nitride Power Devices." In GaN and SiC Power Devices. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-50654-3_5.

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10

Khandelwal, Sourabh. "Gallium Nitride Semiconductor Devices." In Advanced SPICE Model for GaN HEMTs (ASM-HEMT). Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-77730-2_1.

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Trabalhos de conferências sobre o assunto "Gallium nitride"

1

Gopakumar, Govardan, Rajendra Kumar, Zain U. Abdin, Michael J. Manfra, and Oana Malis. "Structural characterization of scandium aluminum nitride/gallium nitride heterostructures for photonic applications." In Gallium Nitride Materials and Devices XX, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2025. https://doi.org/10.1117/12.3043123.

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2

Wu, Tsung Han, Zhe Chuan Feng, Fangfei Li, et al. "Brillouin scattering studies of gallium nitride and Indium gallium nitride." In XXII INTERNATIONAL CONFERENCE ON RAMAN SPECTROSCOPY. AIP, 2010. http://dx.doi.org/10.1063/1.3482346.

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3

Praharaj, C. Jayant. "Gallium Nitride/ Boron Nitride/ Aluminum Gallium Nitride E-Mode High Electron Mobility Transistor Modeling." In 2023 1st International Conference on Circuits, Power and Intelligent Systems (CCPIS). IEEE, 2023. http://dx.doi.org/10.1109/ccpis59145.2023.10291344.

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4

McGinn, Christine, Qingyuan Zeng, Keith Behrman, Vikrant Kumar, and Ioannis Kymissis. "Fully transparent gallium nitride/indium gallium nitride LED as a position sensitive detector." In Gallium Nitride Materials and Devices XIX, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2024. http://dx.doi.org/10.1117/12.2692143.

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5

Martin, Kevin N. "European gallium nitride capability." In 2015 IEEE International Radar Conference (RadarCon). IEEE, 2015. http://dx.doi.org/10.1109/radar.2015.7131004.

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6

Li, Changyi, Antonio Hurtado, Jeremy B. Wright, et al. "Gallium Nitride Nanotube Lasers." In CLEO: Science and Innovations. OSA, 2014. http://dx.doi.org/10.1364/cleo_si.2014.sw1g.3.

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7

Sakr, Salam, Maria Tchernycheva, Juliette Mangeney, et al. "III-nitride intersubband photonics." In Gallium Nitride Materials and Devices VII. SPIE, 2012. http://dx.doi.org/10.1117/12.900002.

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8

Davis, R. F., S. M. Bishop, S. Mita, R. Collazo, Z. J. Reitmeier, and Z. Sitar. "Epitaxial Growth Of Gallium Nitride." In PERSPECTIVES ON INORGANIC, ORGANIC, AND BIOLOGICAL CRYSTAL GROWTH: FROM FUNDAMENTALS TO APPLICATIONS: Basedon the lectures presented at the 13th International Summer School on Crystal Growth. AIP, 2007. http://dx.doi.org/10.1063/1.2751931.

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9

Stassen, E., M. Pu, E. Semenova, E. Zavarin, W. Lundin, and K. Yvind. "Highly Nonlinear Gallium Nitride Waveguides." In CLEO: Science and Innovations. OSA, 2018. http://dx.doi.org/10.1364/cleo_si.2018.sth3i.1.

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10

Gauthier, Briere, and Patrice Genevet. "Gallium nitride free standing metasurfaces." In 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2017. http://dx.doi.org/10.1109/cleoe-eqec.2017.8086612.

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Relatórios de organizações sobre o assunto "Gallium nitride"

1

Harris, J. S. Bulk Gallium Nitride Growth. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada353635.

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2

Heikman, Sten J., and Umesh K. Mishra. System for Bulk Growth of Gallium Nitride. Vapor Phase Epitaxy of Gallium Nitride by Gallium Arc Evaporation. Defense Technical Information Center, 2005. http://dx.doi.org/10.21236/ada464611.

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3

Skowronski, M. Deposition of Gallium Nitride Epilayers by OMVPE. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada337316.

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4

Jones, Kenneth A., Randy P. Tompkins, Michael A. Derenge, Kevin W. Kirchner, Iskander G. Batyrev, and Shuai Zhou. Gallium Nitride (GaN) High Power Electronics (FY11). Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada556955.

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5

Allen, N. Gallium Nitride Superjunction Transistor: Continued Funding Report. Office of Scientific and Technical Information (OSTI), 2022. http://dx.doi.org/10.2172/1890078.

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Mitchell, Christine Charlotte. Defect reduction in gallium nitride using cantilever epitaxy. Office of Scientific and Technical Information (OSTI), 2003. http://dx.doi.org/10.2172/918286.

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7

Penn, John, Sami Hawasli, Khamsouk Kingkeo, and Ali Darwish. Gallium Nitride (GAN) RF Challenge; BAE Design Testing. DEVCOM Army Research Laboratory, 2021. http://dx.doi.org/10.21236/ad1148108.

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Harris, H. M., J. Laskar, and S. Nuttinck. Engineering Support for High Power Density Gallium Nitride Microwave Transistors. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada397860.

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McHugo, S. A., J. Krueger, and C. Kisielowski. Metallic impurities in gallium nitride grown by molecular beam epitaxy. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/603696.

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10

Hite, Jennifer, Mark Twigg, Michael Mastro, et al. Development of Periodically Oriented Gallium Nitride for Non-linear Optics. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada563315.

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