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Artigos de revistas sobre o tema "HEMT AlN/GaN"

Autor: Grafiati

Publicado: 1 de março de 2025

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1

Chiu, Hsien-Chin, Chia-Hao Liu, Chong-Rong Huang, et al. "Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator." Membranes 11, no. 10 (2021): 727. http://dx.doi.org/10.3390/membranes11100727.

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A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selected insulator, atomic layer deposition–grown AlN, and GaN. A conventional p-type enhancement-mode GaN device without an Al2O3/AlN layer, known as a Schottky gate (SG) p-GaN HEMT, was also fabricated for comparison. Because of the presence of the Al2O3/AlN layer, the gate leakage and threshold voltage of the MIS-HEMT improved more than those of the SG-HEM

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2

Tsai, Jung-Hui, Jing-Shiuan Niu, Xin-Yi Huang, and Wen-Chau Liu. "Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures." Science of Advanced Materials 13, no. 2 (2021): 289–93. http://dx.doi.org/10.1166/sam.2021.3856.

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In this article, the electrical characteristics of Al0.28Ga0.72 N/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 20-nm-thick Al2O3 layer by using radio-frequency sputtering as the gate dielectric layer are compared to the conventional metal-semiconductor HEMT (MS-HEMT) with Pd/GaN gate structure. For the insertion of the Al2O3 layer, the energy band near the AlN/GaN heterojunction is lifted slightly up and the 2DEG at the heterojunction is reduced to shift the threshold voltage to the right side. Experimental results exhibits that though the maximum drain

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3

Shrestha, Niraj Man, Yuen Yee Wang, Yiming Li, and E. Y. Chang. "Simulation Study of AlN Spacer Layer Thickness on AlGaN/GaN HEMT." Himalayan Physics 4 (December 22, 2013): 14–17. http://dx.doi.org/10.3126/hj.v4i0.9419.

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High electron mobility transistor (HEMT)Two-dimensional electron gas (2DEG) formed at AlGaN/GaN interface is a critical part to tune the characteristic of AlGaN/GaN HEMT devices. Introduction of AlN spacer layer in between AlGaN and GaN layer is one of the way to improve 2DEG density, mobility, and drain current. Carrier concentration, mobility and conduction band offset for different spacer layer thickness was simulated by using Silvaco simulation tool. Our device simulations showed that carrier concentration, mobility are enhance on introduction of AlN spacer layer in HEMT. In addition, carr

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4

Yamaoka, Yuya, Kazuhiro Ito, Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto, and Takashi Egawa. "Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates." MRS Advances 1, no. 50 (2016): 3415–20. http://dx.doi.org/10.1557/adv.2016.431.

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ABSTRACT In this study, the initial AlN layer and the vertical-direction breakdown voltage (VDBV) of AlGaN/GaN high-electron-mobility transistors (HEMTs) were characterized. Prior to the formation of the interface between the AlN layer and the Si substrate, only trimethylaluminum (TMA) was introduced without ammonia to control the crystal quality of initial AlN layer (TMA preflow). HEMT structures were simultaneously grown on identical AlN layers on Si substrates (AlN/Si templates) grown using different TMA preflow temperatures. The density of screw- or mixed-type dislocations in the initial A

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5

Çörekçi, S., D. Usanmaz, Z. Tekeli, M. Çakmak, S. Özçelik, and E. Özbay. "Surface Morphology of Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor Structure." Journal of Nanoscience and Nanotechnology 8, no. 2 (2008): 640–44. http://dx.doi.org/10.1166/jnn.2008.a181.

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We present surface properties of buffer films (AlN and GaN) and Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AlN interlayer grown on High Temperature (HT)-AlN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 108–109 cm−2. The AFM measurements also exhibited that the presence of atomic steps with large lateral step dimension and the surface of samples was smooth. The lateral step sizes are in the range of 100–250 nm. The typical rms values of HEMT st

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6

Hong, Kuo-Bin, Chun-Yen Peng, Wei-Cheng Lin, et al. "Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer." Micromachines 14, no. 3 (2023): 519. http://dx.doi.org/10.3390/mi14030519.

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In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip size, as well as an Au metal heat-spreading layer deposited on top of a planarized dielectric/passivation layer above the active region. The Au bump patterns can be designed with high flexibility to provide more efficient heat dissipation from the large GaN HEMT chips to an AlN package substrate heat sink with no constraint in the alignment betw

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7

Gusev, A. S., A. O. Sultanov, A. V. Katkov, et al. "Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier." Mikroèlektronika 53, no. 3 (2024): 265–73. http://dx.doi.org/10.31857/s0544126924030086.

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Experimental AlN/GaN heterostructures (HSs) with an ultrathin AlN barrier were obtained using molecular beam epitaxy with plasma activation of nitrogen. The layer resistance of the optimized structures was less than 230 Ω/¨. The scattering processes that limit the mobility of two-dimensional electron gas in undoped AlN/GaN HSs with an ultrathin AlN barrier have been studied. It is shown that in the ns range characteristic of AlN/GaN HEMT HSs (ns 1 × 1013 cm–2), a noticeable contribution to the scattering of charge carriers is made by the roughness of the heterointerface.

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8

Shen, L., S. Heikman, B. Moran, et al. "AlGaN/AlN/GaN high-power microwave HEMT." IEEE Electron Device Letters 22, no. 10 (2001): 457–59. http://dx.doi.org/10.1109/55.954910.

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9

Wang, X. H., X. L. Wang, C. Feng, et al. "Hydrogen sensors based on AlGaN/AlN/GaN HEMT." Microelectronics Journal 39, no. 1 (2008): 20–23. http://dx.doi.org/10.1016/j.mejo.2007.10.022.

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10

Popok, V. N., T. S. Aunsborg, R. H. Godiksen, et al. "Structural Characterization of Movpe Grown Algan/Gan for Hemt Formation." REVIEWS ON ADVANCED MATERIALS SCIENCE 57, no. 1 (2018): 72–81. http://dx.doi.org/10.1515/rams-2018-0049.

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Abstract Results on structural, compositional, optical and electrical characterization of MOVPE grown AlGaN/GaN heterostructures with focus on understanding how the AlN buffer synthesis affects the top films are reported. The study demonstrates very good correlation between different methods providing a platform for reliable estimation of crystalline quality of the AlGaN/GaN structures and related to that electrical performance which is found to be significantly affected by threading dislocations (TD): higher TD density reduces the electron mobility while the charge carrier concentration is fo

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11

Михайлович, С. В., Р. Р. Галиев, А. В. Зуев, А. Ю. Павлов, Д. С. Пономарев та Р. А. Хабибуллин. "Влияние длины затвора на скорость инжекции электронов в каналах полевых транзисторов на основе AlGaN/AlN/GaN". Письма в журнал технической физики 43, № 16 (2017): 9. http://dx.doi.org/10.21883/pjtf.2017.16.44927.16727.

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Исследованы полевые транзисторы с высокой подвижностью электронов (HEMT) на основе AlGaN/AlN/GaN с разной длиной затвора Lg. Значения максимальных частот усиления по току fT и однонаправленного коэффициента усиления fmax составили 88 и 155 GHz для транзисторов с Lg =125 nm и 26 и 82 GHz для транзисторов с Lg = 360 nm соответственно. На основе измеренных S-параметров проведена экстракция значений элементов малосигнальных эквивалентных схем AlGaN/AlN/GaN HEMT и определена зависимость скорости инжекции vinj от напряжения затвор-исток. Также исследовано влияние длины затвора и напряжения между сто

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12

Elwaradi, Reda, Jash Mehta, Thi Huong Ngo, et al. "Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate." Journal of Applied Physics 133, no. 14 (2023): 145705. http://dx.doi.org/10.1063/5.0147048.

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In this work, two series of AlGaN/GaN/AlN high electron mobility transistor (HEMT) heterostructures have been grown by molecular beam epitaxy on AlN bulk substrates. The effects of reduction in the GaN channel thickness as well as the AlGaN barrier thickness and composition on structural and electrical properties of the heterostructures have been studied. The material analysis involved high-resolution x-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. In a first series of HEMT structures grown with an aluminum content of 30% in the AlGaN barrier,

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13

Roensch, Sebastian, Victor Sizov, Takuma Yagi, et al. "Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon." Materials Science Forum 740-742 (January 2013): 502–5. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.502.

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The impact of the thickness of an AlN spacer in AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures on the Hall mobility was investigated in a range of 30 K - 340 K. The AlN spacer has a strong impact on the mobility at temperatures below 150 K. This effect is linked to a reduction of alloy scattering. Optical and scanning electron microscopy revealed hexagonal shaped defects which also have an effect on the mobility. These defects can be avoided by an appropriate adjustment of the AlN layer thickness.

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14

Hao, Lu, Zhihong Liu, Hanghai Du, et al. "Improvement of the Thermal Performance of the GaN-on-Si Microwave High-Electron-Mobility Transistors by Introducing a GaN-on-Insulator Structure." Micromachines 15, no. 12 (2024): 1525. https://doi.org/10.3390/mi15121525.

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GaN-on-Si high-electron-mobility transistors have emerged as the next generation of high-powered and cost-effective microwave devices; however, the limited thermal conductivity of the Si substrate prevents the realization of their potential. In this paper, a GaN-on-insulator (GNOI) structure is proposed to enhance the heat dissipation ability of a GaN-on-Si HEMT. Electrothermal simulation was carried out to analyze the thermal performance of the GNOI-on-Si HEMTs with different insulator dielectrics, including SiO2, SiC, AlN, and diamond. The thermal resistance of the HEMTs was found to be able

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15

Wu, Jui Sheng, and Edward Yi Chang. "Demonstration of High Interface Quality AlGaN/GaN MIS-HEMT with Fully Wet Recess and MOCVD Grown AlN Dielectric." Materials Science Forum 1055 (March 4, 2022): 7–12. http://dx.doi.org/10.4028/p-180hme.

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In this study, the results indicate that a method combining fully-recessed wet etching and regrown channel by MOCVD is capable of obtaining high quality interface in GaN MIS-HEMT. A low Vth hysterisis GaN MIS-HEMT of 0.3V is demonstrated in this work. The GaN MIS-HEMT has a Vth of-1.5 V, a high Id,max of 771mA/mm and a RON of 13.5 Ω·mm. The wet etching shows good uniformity while the MOCVD grown AlN enhances the maximum drain current. The concept provides new insights to gate recess fabrication and MOCVD grown high quality dielectrics.

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16

Kim, Jeong-Gil, Chul-Ho Won, Do-Kywn Kim, et al. "Growth of AlN/GaN HEMT structure Using Indium-surfactant." JSTS:Journal of Semiconductor Technology and Science 15, no. 5 (2015): 490–96. http://dx.doi.org/10.5573/jsts.2015.15.5.490.

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17

Durukan, İ. Kars, Ö. Akpınar, C. Avar, et al. "Analyzing the AlGaN/AlN/GaN Heterostructures for HEMT Applications." Journal of Nanoelectronics and Optoelectronics 13, no. 3 (2018): 331–34. http://dx.doi.org/10.1166/jno.2018.2239.

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18

Gowthami, Y., B.Balaji, and K. Srinivasa Rao. "Qualitative Analysis & Advancement of Asymmetric Recessed Gates with Dual Floating Material GaN HEMT for Quantum Electronics." Journal of Integrated Circuits and Systems 18, no. 1 (2023): 1–8. http://dx.doi.org/10.29292/jics.v18i1.657.

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The Impact of Aluminium nitride (AlN) Spacer, Gallium Nitride (GaN) Cap Layer, Front Pi Gate (FG) and Back Pi Gate(BG), High K dielectric material such as Hafnium dioxide(HfO2), Aluminium Oxide (Al2O3), Silicon nitride (Si3N4) on Aluminium Galium Nitride/ Gallium Nitride (AlGaN/GaN), Heterojunction High Electron Mobility Transistor (HEMT) of 6nm(nanometer) technology is simulated and extracted the results using the Silvaco Atlas TCAD tool. The importance of High K dielectric materials like Al2O3 and Si3N4 are studied for the proposal of GaN HEMT. AlN, GaN Cap Layers, and High K Dielectric mate

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19

Zhang, Wenli, Zhengyang Liu, Fred Lee, Shuojie She, Xiucheng Huang, and Qiang Li. "A Gallium Nitride-Based Power Module for Totem-Pole Bridgeless Power Factor Correction Rectifier." International Symposium on Microelectronics 2015, no. 1 (2015): 000324–29. http://dx.doi.org/10.4071/isom-2015-wp11.

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The totem-pole bridgeless power factor correction (PFC) rectifier has recently gained popularity for ac-dc power conversion. The emerging gallium nitride (GaN) high-electron-mobility transistor (HEMT), having a small body diode reverse recovery effect and low switching loss, is a promising device for use in the totem-pole approach. The design, fabrication, and thermal analysis of a GaN-based full-bridge multi-chip module (MCM) for totem-pole bridgeless PFC rectifier are introduced in this work. Four cascode GaN devices using the same pair of high-voltage GaN HEMT and low-voltage silicon (Si) p

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20

Reilly, Caroline E., Nirupam Hatui, Thomas E. Mates, Shuji Nakamura, Steven P. DenBaars, and Stacia Keller. "2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature." Applied Physics Letters 118, no. 22 (2021): 222103. http://dx.doi.org/10.1063/5.0050584.

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21

Huang, Chong-Rong, Hsien-Chin Chiu, Chia-Hao Liu, et al. "Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates." Membranes 11, no. 11 (2021): 848. http://dx.doi.org/10.3390/membranes11110848.

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In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal conductivity of the QST substrate. Thermal imaging analysis indicated that the temperature variation of the GaN on the QST device was 4.5 °C and that of the GaN on the Si device was 9.2 °C at a drain-to-source current (IDS) of 300 mA/mm following 50 s of operation. Compared with the GaN HEMT on the S

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22

Vohra, Anurag, Karen Geens, Ming Zhao, et al. "Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application." Applied Physics Letters 120, no. 26 (2022): 261902. http://dx.doi.org/10.1063/5.0097797.

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In this work, we demonstrate the epitaxial growth of a gallium-nitride (GaN) buffer structure qualified for 1200 V applications on 200 mm engineered poly-AlN substrates with hard breakdown >1200 V. The manufacturability of a 1200 V qualified buffer structure opens doors to high voltage GaN-based power applications such as in electric cars. Key to achieving the high breakdown voltage is careful engineering of the complex epitaxial material stack in combination with the use of 200 mm engineered poly-AlN substrates. The CMOS-fab friendly engineered poly-AlN substrates have a coefficient of the

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23

Sun, Mengyuan, Luyu Wang, Penghao Zhang, and Kun Chen. "Improving Performance of Al2O3/AlN/GaN MIS HEMTs via In Situ N2 Plasma Annealing." Micromachines 14, no. 6 (2023): 1100. http://dx.doi.org/10.3390/mi14061100.

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A novel monocrystalline AlN interfacial layer formation method is proposed to improve the device performance of the fully recessed-gate Al2O3/AlN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs), which is achieved by plasma-enhanced atomic layer deposition (PEALD) and in situ N2 plasma annealing (NPA). Compared with the traditional RTA method, the NPA process not only avoids the device damage caused by high temperatures but also obtains a high-quality AlN monocrystalline film that avoids natural oxidation by in situ growth. As a contrast with the conventional PE

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24

Taking, S., D. MacFarlane, and E. Wasige. "AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results." Active and Passive Electronic Components 2011 (2011): 1–7. http://dx.doi.org/10.1155/2011/821305.

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Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al2O3as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1) Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2) mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper.

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Lu, Hao, Ling Yang, Bin Hou, et al. "AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade." Applied Physics Letters 120, no. 17 (2022): 173502. http://dx.doi.org/10.1063/5.0088585.

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This work reports an AlN/GaN/InGaN high electron mobility transistor (HEMT) with a steep subthreshold swing (SS) of sub-60 mV/dec utilizing a coupling-channel architecture. The fabricated transistors show a negligible hysteresis, a SS of 39 mV/dec, a large gate voltage swing of >4.2 V, and achieving an excellent quality factor Q = gm/SS of 6.3 μS-dec/ μm-mV. The negative differential resistance effect was found in the subthreshold region in the gate current–voltage ( Ig– VGS) curve. The hot carrier transfer mechanism that occurred in the turn-on/pinch-off progress of the CC-HEMT under the d

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Lu, Hao, Ling Yang, Bin Hou, et al. "AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade." Applied Physics Letters 120, no. 17 (2022): 173502. http://dx.doi.org/10.1063/5.0088585.

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This work reports an AlN/GaN/InGaN high electron mobility transistor (HEMT) with a steep subthreshold swing (SS) of sub-60 mV/dec utilizing a coupling-channel architecture. The fabricated transistors show a negligible hysteresis, a SS of 39 mV/dec, a large gate voltage swing of >4.2 V, and achieving an excellent quality factor Q = gm/SS of 6.3 μS-dec/ μm-mV. The negative differential resistance effect was found in the subthreshold region in the gate current–voltage ( Ig– VGS) curve. The hot carrier transfer mechanism that occurred in the turn-on/pinch-off progress of the CC-HEMT under the d

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Choi, Uiho, Kyeongjae Lee, Taemyung Kwak, et al. "Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT." Japanese Journal of Applied Physics 58, no. 12 (2019): 121003. http://dx.doi.org/10.7567/1347-4065/ab4df3.

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Eustis, Tyler J., John Silcox, Michael J. Murphy, and William J. Schaff. "Evidence From EELS of Oxygen in the Nucleation Layer of a MBE Grown III-N HEMT." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 188–94. http://dx.doi.org/10.1557/s1092578300004269.

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The presence of oxygen throughout the nominally AlN nucleation layer of a RF assisted MBE grown III-N HEMT was revealed upon examination by Electron Energy Loss Spectroscopy (EELS) in a Scanning Transmission Electron Microscope (STEM). The nucleation layer generates the correct polarity (gallium face) required for producing a piezoelectric induced high mobility two dimensional electron gas at the AlGaN/GaN heterojunction. Only AlN or AlGaN nucleation layers have provided gallium face polarity in RF assisted MBE grown III-N’s on sapphire. The sample was grown at Cornell University in a Varian G

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Михайлович, С. В., А. Ю. Павлов, К. Н. Томош та Ю. В. Федоров. "Низкоэнергетическое бездефектное сухое травление барьерного слоя HEMT AlGaN/AlN/GaN". Письма в журнал технической физики 44, № 10 (2018): 61. http://dx.doi.org/10.21883/pjtf.2018.10.46100.17227.

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AbstractA method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled BCl_3 plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors

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Koehler, Andrew D., Neeraj Nepal, Travis J. Anderson, et al. "Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation." IEEE Electron Device Letters 34, no. 9 (2013): 1115–17. http://dx.doi.org/10.1109/led.2013.2274429.

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Florovič, M., R. Szobolovszký, J. Kováč, et al. "Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT." Semiconductor Science and Technology 34, no. 6 (2019): 065021. http://dx.doi.org/10.1088/1361-6641/ab1737.

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Wang, Jie, Lingling Sun, Jun Liu, and Mingzhu Zhou. "A surface-potential-based model for AlGaN/AlN/GaN HEMT." Journal of Semiconductors 34, no. 9 (2013): 094002. http://dx.doi.org/10.1088/1674-4926/34/9/094002.

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Luo, Xin, Peng Cui, Tieying Zhang, et al. "High performance of AlGaN/GaN HEMT with AlN cap layer." Micro and Nanostructures 198 (February 2025): 208054. https://doi.org/10.1016/j.micrna.2024.208054.

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Mitterhuber, Lisa, René Hammer, Thomas Dengg, and Jürgen Spitaler. "Thermal Characterization and Modelling of AlGaN-GaN Multilayer Structures for HEMT Applications." Energies 13, no. 9 (2020): 2363. http://dx.doi.org/10.3390/en13092363.

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To optimize the thermal design of AlGaN-GaN high-electron-mobility transistors (HEMTs), which incorporate high power densities, an accurate prediction of the underlying thermal transport mechanisms is crucial. Here, a HEMT-structure (Al0.17Ga0.83N, GaN, Al0.32Ga0.68N and AlN on a Si substrate) was investigated using a time-domain thermoreflectance (TDTR) setup. The different scattering contributions were investigated in the framework of phonon transport models (Callaway, Holland and Born-von-Karman). The thermal conductivities of all layers were found to decrease with a temperature between 300

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Jurkovic, M., D. Gregusova, V. Palankovski, et al. "Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region." IEEE Electron Device Letters 34, no. 3 (2013): 432–34. http://dx.doi.org/10.1109/led.2013.2241388.

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Adak, Sarosij, Arghyadeep Sarkar, Sanjit Swain, Hemant Pardeshi, Sudhansu Kumar Pati, and Chandan Kumar Sarkar. "High performance AlInN/AlN/GaN p-GaN back barrier Gate-Recessed Enhancement-Mode HEMT." Superlattices and Microstructures 75 (November 2014): 347–57. http://dx.doi.org/10.1016/j.spmi.2014.07.036.

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Dai, Jin-Ji, Thi Thu Mai, Ssu-Kuan Wu, et al. "High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT." Nanomaterials 11, no. 7 (2021): 1766. http://dx.doi.org/10.3390/nano11071766.

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The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the sample with a 450 sccm Cp2Mg flow rate reached a maximum value of 2.22%. No reversion of the hole concentration was observed due to the existence of stress in the designed sample structures. This is attributed to the higher Mg-to-Ga incorporation rate resulting from the restriction of self-compensation under compressive strain. In addition, by using an

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Guo, Lunchun, Xiaoliang Wang, Cuimei Wang, et al. "The influence of 1nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure." Microelectronics Journal 39, no. 5 (2008): 777–81. http://dx.doi.org/10.1016/j.mejo.2007.12.005.

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Gusev, A. S., A. O. Sultanov, A. V. Katkov, et al. "Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier." Russian Microelectronics 53, no. 3 (2024): 252–59. http://dx.doi.org/10.1134/s1063739724600304.

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Khediri, Abdelkrim, Abbasia Talbi, Abdelatif Jaouad, Hassan Maher, and Ali Soltani. "Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT." Micromachines 12, no. 11 (2021): 1284. http://dx.doi.org/10.3390/mi12111284.

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In this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) device is realized. The device shows normal ON characteristics with a maximum current of 570 mA/mm at a gate-to-source voltage of 3 V, an on-state resistance of 7.3 Ω·mm and breakdown voltage of 500 V. The device has been modeled using numerical simulations to reproduce output and transfer characteristics. We identify, via experimental results and TCAD simulations, the main physical mechanisms responsible for the premature breakdown. The contribution of the AlN/Silicon substrate interface to the

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Hamady, Saleem, Bilal Beydoun, and Frédéric Morancho. "TCAD-Based Analysis on the Impact of AlN Interlayer in Normally-off AlGaN/GaN MISHEMTs with Buried p-Region." Electronics 14, no. 2 (2025): 313. https://doi.org/10.3390/electronics14020313.

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With the growing demand for more efficient power conversion and silicon reaching its theoretical limit, wide bandgap semiconductor devices are emerging as a potential solution. For instance, Gallium Nitride (GaN)-based high-electron-mobility transistors (HEMTs) are getting more attention, and several structures for the normally off operation have been proposed. Adding an AlN interlayer in conventional AlGaN/GaN normally on HEMT structures is known to enhance the current density. In this work, the effect of an AlN interlayer in the normally off AlGaN/GaN MISHEMT with a buried p-region was inves

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Piner, E. L., D. M. Keogh, J. S. Flynn, and J. M. Redwing. "AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 349–54. http://dx.doi.org/10.1557/s109257830000449x.

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We report on the effect of strain induced polarization fields in AlGaN/GaN heterostructures due to the incorporation of Si dopant ions in the lattice. By Si-doping (Al)GaN, a contraction of the wurtzite unit cell can occur leading to strain in doped AlGaN/GaN heterostructures such as high electron mobility transistors (HEMTs). In a typical modulation doped AlGaN/GaN HEMT structure, the Si-doped AlGaN supply layer is separated from the two-dimensional electron gas channel by an undoped AlGaN spacer layer. This dopant-induced strain, which is tensile, can create an additional source of charge at

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Sidi Mohammed Hadj, Irid, Mohammed Khaouani, Imane Four, Zakarya KOURDI, and Omar Azzoug. "SPSPT Switch Based AlN/GaN/AlGaN HEMT on Ku to Ku to V-Band for Satellite Application." Journal of Integrated Circuits and Systems 19, no. 3 (2024): 1–4. https://doi.org/10.29292/jics.v19i3.885.

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This paper details the design, fabrication, and characterization of a single-pole-single-throw (SPST) switch leveraging Aluminum Nitride/Gallium Nitride/Aluminum Gallium Nitride High Electron Mobility Transistor (AlN/GaN/AlGaN HEMT) technology specifically tailored for Ku to V-band satellite applications. The switch targets high-frequency operation within the 40 GHz to 75 GHz range to satisfy the demanding specifications of satellite communication systems. The design integrates AlN, GaN, and AlGaN layers to capitalize on the superior electrical properties of GaN-based transistors while guarant

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Varghese, Arathy, Ashish Kumar, Arun Kishor Johar, Girraj Sharma, Sandeep Vyas, and Mahendra singh Yadav. "AlGaN/AlN/GaN SG-HEMT as pH detector: A simulation study." Materials Today: Proceedings 46 (2021): 5927–30. http://dx.doi.org/10.1016/j.matpr.2021.03.740.

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Li, Jialin, Yian Yin, Ni Zeng, et al. "Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate." Superlattices and Microstructures 161 (January 2022): 107064. http://dx.doi.org/10.1016/j.spmi.2021.107064.

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Lutsenko, E. V., M. V. Rzheutski, A. G. Vainilovich, et al. "MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3." Semiconductors 52, no. 16 (2018): 2107–10. http://dx.doi.org/10.1134/s1063782618160170.

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Nidhi, Sansaptak Dasgupta, Yi Pei, et al. "N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications." IEEE Electron Device Letters 31, no. 12 (2010): 1437–39. http://dx.doi.org/10.1109/led.2010.2078791.

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Chen, P. G., M. Tang, M. H. Liao, and M. H. Lee. "In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact." Solid-State Electronics 129 (March 2017): 206–9. http://dx.doi.org/10.1016/j.sse.2016.11.002.

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Wang, Yan-Ping, Yin-Hong Luo, Wei Wang, et al. "60 Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices." Chinese Physics C 37, no. 5 (2013): 056201. http://dx.doi.org/10.1088/1674-1137/37/5/056201.

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Gassoumi, M., A. Helali, M. Gassoumi, et al. "Electron confinement enhancement in AlGaN/AlN/GaN HEMT using BGaN buffer." Journal of Ovonic Research 19, no. 1 (2023): 81–86. http://dx.doi.org/10.15251/jor.2023.191.81.

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When the AlGaN/GaN high electron mobility transistor (HEMT) is strongly biased, the speed of the electrons in the channel increases, which leads to an injection of electrons into the buffer, and consequently the appearance of the "short channel effect" phenomenon, which limits the performance of the component to overcome this effect and increase the power/frequency performance of the component, one solution consists in using a confinement barrier. This involves placing an electrostatic barrier under the GaN channel so as to block the injection of electrons into the buffer layer when the transi

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