Conecte-se

Bibliografias temáticas / PCM memory / Artigos de revistas

Siga este link para ver outros tipos de publicações sobre o tema: PCM memory.

Artigos de revistas sobre o tema "PCM memory"

Autor: Grafiati

Publicado: 7 de julho de 2024

Última modificação: 31 de julho de 2025

Crie uma referência precisa em APA, MLA, Chicago, Harvard, e outros estilos

Selecione um tipo de fonte:

Veja os 50 melhores artigos de revistas para estudos sobre o assunto "PCM memory".

Ao lado de cada fonte na lista de referências, há um botão "Adicionar à bibliografia". Clique e geraremos automaticamente a citação bibliográfica do trabalho escolhido no estilo de citação de que você precisa: APA, MLA, Harvard, Chicago, Vancouver, etc.

Você também pode baixar o texto completo da publicação científica em formato .pdf e ler o resumo do trabalho online se estiver presente nos metadados.

Veja os artigos de revistas das mais diversas áreas científicas e compile uma bibliografia correta.

1

Priya, Bhukya Krishna, and N. Ramasubramanian. "Improving the Lifetime of Phase Change Memory by Shadow Dynamic Random Access Memory." International Journal of Service Science, Management, Engineering, and Technology 12, no. 2 (2021): 154–68. http://dx.doi.org/10.4018/ijssmet.2021030109.

Texto completo da fonte

Resumo:

Emerging NVM are replacing the conventional memory technologies due to their huge cell density and low energy consumption. Restricted writes is one of the major drawbacks to adopt PCM memories in real-time environments. The non-uniform writes and process variations can damage the memory cell with intensive writes, as PCM memory cells are having restricted write endurance. To prolong the lifetime of a PCM, an extra DRAM shadow memory has been added to store the writes that comes to the PCM and to level out the wearing that occurs on the PCM. An extra address directory will store the address of

Estilos ABNT, Harvard, Vancouver, APA, etc.

2

Arjomand, Mohammad, Amin Jadidi, Mahmut T. Kandemir, Anand Sivasubramaniam, and Chita R. Das. "HL-PCM: MLC PCM Main Memory with Accelerated Read." IEEE Transactions on Parallel and Distributed Systems 28, no. 11 (2017): 3188–200. http://dx.doi.org/10.1109/tpds.2017.2705125.

Texto completo da fonte

Estilos ABNT, Harvard, Vancouver, APA, etc.

3

Jabarov, Elkhan, Byung-Won On, Gyu Choi, and Myong-Soon Park. "R-Tree for phase change memory." Computer Science and Information Systems 14, no. 2 (2017): 347–67. http://dx.doi.org/10.2298/csis160620008j.

Texto completo da fonte

Resumo:

Nowadays, many applications use spatial data for instance-location information, so storing spatial data is important.We suggest using R -Tree over PCM. Our objective is to design a PCM-sensitive R -Tree that can store spatial data as well as improve the endurance problem. Initially, we examine how R -Tree causes endurance problems in PCM, and we then optimize it for PCM. We propose doubling the leaf node size, writing a split node to a blank node, updating parent nodes only once and not merging the nodes after deletion when the minimum fill factor requirement does not meet. Based on our experi

Estilos ABNT, Harvard, Vancouver, APA, etc.

4

Macyna, Wojciech, and Michal Kukowski. "Adaptive Merging on Phase Change Memory." Fundamenta Informaticae 188, no. 2 (2023): 103–26. http://dx.doi.org/10.3233/fi-222144.

Texto completo da fonte

Resumo:

Indexing is a well-known database technique used to facilitate data access and speed up query processing. Nevertheless, the construction and modification of indexes are very expensive. In traditional approaches, all records in the database table are equally covered by the index. It is not effective, since some records may be queried very often and some never. To avoid this problem, adaptive merging has been introduced. The key idea is to create an index adaptively and incrementally as a side-product of query processing. As a result, the database table is indexed partially depending on the quer

Estilos ABNT, Harvard, Vancouver, APA, etc.

5

Antolini, Alessio, Francesco Zavalloni, Andrea Lico, et al. "The Role of Phase-Change Memory in Edge Computing and Analog In-Memory Computing: An Overview of Recent Research Contributions and Future Challenges." Sensors 25, no. 12 (2025): 3618. https://doi.org/10.3390/s25123618.

Texto completo da fonte

Resumo:

Phase Change Memory (PCM) has emerged as a promising non-volatile memory technology with significant applications in both edge computing and analog in-memory computing. This paper synthesizes recent research contributions on the use of PCM for smart sensing, structural health monitoring, neural network acceleration, and binary pattern matching. By examining key advancements, challenges, and potential future developments, this work provides a comprehensive state-of-the-art overview of PCM in these domains, highlighting the possible employments of PCM technology in further edge computing scenari

Estilos ABNT, Harvard, Vancouver, APA, etc.

6

Hong, Jeong Beom, Young Sik Lee, Yong Wook Kim, and Tae Hee Han. "Error-Vulnerable Pattern-Aware Binary-to-Ternary Data Mapping for Improving Storage Density of 3LC Phase Change Memory." Electronics 9, no. 4 (2020): 626. http://dx.doi.org/10.3390/electronics9040626.

Texto completo da fonte

Resumo:

Multi-level cell (MLC) phase-change memory (PCM) is an attractive solution for next-generation memory that is composed of resistance-based nonvolatile devices. MLC PCM is superior to dynamic random-access memory (DRAM) with regard to scalability and leakage power. Therefore, various studies have focused on the feasibility of MLC PCM-based main memory. The key challenges in replacing DRAM with MLC PCM are low reliability, limited lifetime, and long write latency, which are predominantly affected by the most error-vulnerable data pattern. Based on the physical characteristics of the PCM, where t

Estilos ABNT, Harvard, Vancouver, APA, etc.

7

Tang, Pu, Jing Xiao, and Ming Tao. "Thermal Crosstalk Analysis of Phase Change Memory Considering Thermoelectric Effect and Thermal Boundary Resistance." Journal of Physics: Conference Series 2624, no. 1 (2023): 012020. http://dx.doi.org/10.1088/1742-6596/2624/1/012020.

Texto completo da fonte

Resumo:

Abstract Phase change memory (PCM) has emerged as a promising memory for next-generation applications due to its high-speed read and write capabilities as well as non-volatility. However, as PCM scales down to smaller feature sizes, it faces the challenge of thermal crosstalk. During the reset operation, a large amount of heat is generated and dissipated in the PCM array, potentially affecting adjacent memory cells, compromising device stability, and limiting high-density integration. To accurately investigate the thermal crosstalk in the PCM array, the conventional finite element model of the

Estilos ABNT, Harvard, Vancouver, APA, etc.

8

Ding, Feilong, Baokang Peng, Xi Li, et al. "A review of compact modeling for phase change memory." Journal of Semiconductors 43, no. 2 (2022): 023101. http://dx.doi.org/10.1088/1674-4926/43/2/023101.

Texto completo da fonte

Resumo:

Abstract Phase change memory (PCM) attracts wide attention for the memory-centric computing and neuromorphic computing. For circuit and system designs, PCM compact models are mandatory and their status are reviewed in this work. Macro models and physics-based models have been proposed in different stages of the PCM technology developments. Compact modeling of PCM is indeed more complex than the transistor modeling due to their multi-physics nature including electrical, thermal and phase transition dynamics as well as their interactions. Realizations of the PCM operations including threshold sw

Estilos ABNT, Harvard, Vancouver, APA, etc.

9

Sun, Hao, Lan Chen, Xiaoran Hao, Chenji Liu, and Mao Ni. "An Energy-Efficient and Fast Scheme for Hybrid Storage Class Memory in an AIoT Terminal System." Electronics 9, no. 6 (2020): 1013. http://dx.doi.org/10.3390/electronics9061013.

Texto completo da fonte

Resumo:

Conventional main memory can no longer meet the requirements of low energy consumption and massive data storage in an artificial intelligence Internet of Things (AIoT) system. Moreover, the efficiency is decreased due to the swapping of data between the main memory and storage. This paper presents a hybrid storage class memory system to reduce the energy consumption and optimize IO performance. Phase change memory (PCM) brings the advantages of low static power and a large capacity to a hybrid memory system. In order to avoid the impact of poor write performance in PCM, a migration scheme impl

Estilos ABNT, Harvard, Vancouver, APA, etc.

10

Stern, Keren, Yair Keller, Christopher M. Neumann, Eric Pop, and Eilam Yalon. "Temperature-dependent thermal resistance of phase change memory." Applied Physics Letters 120, no. 11 (2022): 113501. http://dx.doi.org/10.1063/5.0081016.

Texto completo da fonte

Resumo:

One of the key challenges of phase change memory (PCM) is its high power consumption during the reset operation, when the phase change material (typically Ge2Sb2Te5, i.e., GST) heats up to ∼900 K or more in order to melt. Here, we study the temperature-dependent behavior of PCM devices by probing the reset power at ambient temperatures from 80 to 400 K. We find that different device structures exhibit contrasting temperature-dependent behavior. The reset power in our confined-type PCM is nearly unchanged with ambient temperature, corresponding to a temperature-dependent thermal resistance, whe

Estilos ABNT, Harvard, Vancouver, APA, etc.

11

Chen, An, Stefano Ambrogio, Pritish Narayanan, et al. "(Invited) Emerging Nonvolatile Memories for Analog Neuromorphic Computing." ECS Meeting Abstracts MA2024-01, no. 21 (2024): 1293. http://dx.doi.org/10.1149/ma2024-01211293mtgabs.

Texto completo da fonte

Resumo:

Emerging non-volatile memory (NVM) devices, such as STT-MRAM, PCM, RRAM, have been explored for embedded memory and storage applications to replace CMOS-based SRAM/DRAM and Flash devices. Recently, many of these memory devices have been utilized for new computing paradigms beyond Boolean logic and von Neumann architectures. For example, in-memory analog computing reduces data movement between computing and memory units and exploits the intrinsic parallelism in memory arrays. It finds a natural application in deep neural network (DNN) accelerators by implementing high-throughput high-efficiency

Estilos ABNT, Harvard, Vancouver, APA, etc.

12

Shin, Dongsuk, Hakbeom Jang, Kiseok Oh, and Jae W. Lee. "An Energy-Efficient DRAM Cache Architecture for Mobile Platforms With PCM-Based Main Memory." ACM Transactions on Embedded Computing Systems 21, no. 1 (2022): 1–22. http://dx.doi.org/10.1145/3451995.

Texto completo da fonte

Resumo:

A long battery life is a first-class design objective for mobile devices, and main memory accounts for a major portion of total energy consumption. Moreover, the energy consumption from memory is expected to increase further with ever-growing demands for bandwidth and capacity. A hybrid memory system with both DRAM and PCM can be an attractive solution to provide additional capacity and reduce standby energy. Although providing much greater density than DRAM, PCM has longer access latency and limited write endurance to make it challenging to architect it for main memory. To address this challe

Estilos ABNT, Harvard, Vancouver, APA, etc.

13

Rajat, Suvra Das. "Emerging Memory Technologies: A Systematic Literature Review with Focus on Resistive RAM (RRAM) and Phase-Change Memory (PCM)." Journal of Scientific and Engineering Research 9, no. 6 (2022): 53–61. https://doi.org/10.5281/zenodo.10902919.

Texto completo da fonte

Resumo:

<strong>Abstract </strong>This systematic literature review navigates the ever-evolving realm of emerging memory technologies, with a specific focus on Resistive RAM (RRAM) and Phase-Change Memory (PCM). The review undertakes a meticulous and comprehensive exploration of these technologies, unraveling their current state, advancements, challenges, and future trajectories. The key findings underscore the pivotal role that RRAM and PCM play in shaping the landscape of memory technologies. RRAM celebrated for its non-volatile nature, low power consumption, and high-speed operation, emerges as a p

Estilos ABNT, Harvard, Vancouver, APA, etc.

14

Hong, Feng, Jianquan Zhang, Shigui Qi, and Zheng Li. "PCM-2R: Accelerating MLC PCM Writes via Data Reshaping and Remapping." Mobile Information Systems 2022 (July 16, 2022): 1–19. http://dx.doi.org/10.1155/2022/9552517.

Texto completo da fonte

Resumo:

Multilevel cell (MLC) phase change memory (PCM) shows great potential in terms of capacity and cost compared with single-level cell (SLC) PCM by storing multiple bits in one physical PCM cell. However, poor write performance is a huge challenge for MLC PCM. In general, write latency of MLC PCM is 10 to 100X longer compared with DRAM technology. Considerable write latency greatly degrades the overall system performance and restricts the application of MLC PCM. Actually, several chips compose a memory DIMM to match the wide interface of data bus. The data of a write request, i.e., a cache line b

Estilos ABNT, Harvard, Vancouver, APA, etc.

15

Ho, Chien-Chung, Yu-Ming Chang, Yuan-Hao Chang, Hsiu-Chang Chen, and Tei-Wei Kuo. "Write-aware memory management for hybrid SLC-MLC PCM memory systems." ACM SIGAPP Applied Computing Review 17, no. 2 (2017): 16–26. http://dx.doi.org/10.1145/3131080.3131082.

Texto completo da fonte

Estilos ABNT, Harvard, Vancouver, APA, etc.

16

Ding, Feilong, Deqi Dong, Yihan Chen, Xinnan Lin, and Lining Zhang. "Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention." Nanomaterials 11, no. 11 (2021): 2945. http://dx.doi.org/10.3390/nano11112945.

Texto completo da fonte

Resumo:

A robust simulation framework was developed for nanoscale phase change memory (PCM) cells. Starting from the reaction rate theory, the dynamic nucleation was simulated to capture the evolution of the cluster population. To accommodate the non-uniform critical sizes of nuclei due to the non-isothermal conditions during PCM cell programming, an improved crystallization model was proposed that goes beyond the classical nucleation and growth model. With the above, the incubation period in which the cluster distributions reached their equilibrium was captured beyond the capability of simulations wi

Estilos ABNT, Harvard, Vancouver, APA, etc.

17

Antolini, Alessio, Eleonora Franchi Scarselli, Antonio Gnudi, et al. "Characterization and Programming Algorithm of Phase Change Memory Cells for Analog In-Memory Computing." Materials 14, no. 7 (2021): 1624. http://dx.doi.org/10.3390/ma14071624.

Texto completo da fonte

Resumo:

In this paper, a thorough characterization of phase-change memory (PCM) cells was carried out, aimed at evaluating and optimizing their performance as enabling devices for analog in-memory computing (AIMC) applications. Exploiting the features of programming pulses, we discuss strategies to reduce undesired phenomena that afflict PCM cells and are particularly harmful in analog computations, such as low-frequency noise, time drift, and cell-to-cell variability of the conductance. The test vehicle is an embedded PCM (ePCM) provided by STMicroelectronics and designed in 90-nm smart power BCD tec

Estilos ABNT, Harvard, Vancouver, APA, etc.

18

Arjomand, Mohammad, Mahmut T. Kandemir, Anand Sivasubramaniam, and Chita R. Das. "Boosting access parallelism to PCM-based main memory." ACM SIGARCH Computer Architecture News 44, no. 3 (2016): 695–706. http://dx.doi.org/10.1145/3007787.3001211.

Texto completo da fonte

Estilos ABNT, Harvard, Vancouver, APA, etc.

19

Lee, Jung-Hoon. "PCM Main Memory for Low Power Embedded System." IEMEK Journal of Embedded Systems and Applications 10, no. 6 (2015): 391–97. http://dx.doi.org/10.14372/iemek.2015.10.6.391.

Texto completo da fonte

Estilos ABNT, Harvard, Vancouver, APA, etc.

20

Jung, Bo-Sung, and Jung-Hoon Lee. "High Performance PCM&DRAM Hybrid Memory System." IEMEK Journal of Embedded Systems and Applications 11, no. 2 (2016): 117–23. http://dx.doi.org/10.14372/iemek.2016.11.2.117.

Texto completo da fonte

Estilos ABNT, Harvard, Vancouver, APA, etc.

21

Priya, Bhukya Krishna, and N. Ramasubramanian. "Enhancing the Lifetime of a Phase Change Memory with Bit-Flip Reversal." Journal of Circuits, Systems and Computers 29, no. 14 (2020): 2050219. http://dx.doi.org/10.1142/s0218126620502199.

Texto completo da fonte

Resumo:

Phase Change Memory (PCM) has evolved as a promising alternative over Dynamic Random Access Memory (DRAM) in terms of cell density and leakage power. While non-volatility is a desirable feature, it gives rise to the possibility of the data being present even after the power is switched off. To secure the data, encryption is normally done by using the standard Advanced Encryption Standard (AES) algorithm. Encrypting the data results in huge number of bit-flips, which reduces the lifetime of a PCM. The proposed method increases the lifetime of PCM by reducing the number of bit-flips occurred due

Estilos ABNT, Harvard, Vancouver, APA, etc.

22

HARNSOONGNOEN, SANCHAI, CHIRANUT SA-NGIAMSAK, and APIRAT SIRITARATIWAT. "OPTIMIZATION OF PHASE CHANGE MEMORY WITH THIN METAL INSERTED LAYER ON MATERIAL PROPERTIES." International Journal of Modern Physics B 23, no. 17 (2009): 3625–30. http://dx.doi.org/10.1142/s0217979209063080.

Texto completo da fonte

Resumo:

This works reports, for the first time, the thorough study and optimisation of Phase Change Memory (PCM) structure with thin metal inserted chalcogenide via electrical resistivity (ρ) using finite element modeling. PCM is one of the best candidates for next generation non-volatile memory. It has received much attention recently due to its fast write speed, non-destructive readout, superb scalability, and great compatibility with current silicon-based mass fabrication. The setback of PCM is a high reset current typically higher than 1mA based on 180nm lithography. To reduce the reset current an

Estilos ABNT, Harvard, Vancouver, APA, etc.

23

Akbarzadeh, Negar, Sina Darabi, Atiyeh Gheibi-Fetrat, Amir Mirzaei, Mohammad Sadrosadati, and Hamid Sarbazi-Azad. "H3DM: A High-bandwidth High-capacity Hybrid 3D Memory Design for GPUs." Proceedings of the ACM on Measurement and Analysis of Computing Systems 8, no. 1 (2024): 1–28. http://dx.doi.org/10.1145/3639038.

Texto completo da fonte

Resumo:

Graphics Processing Units (GPUs) are widely used for modern applications with huge data sizes. However, the performance benefit of GPUs is limited by their memory capacity and bandwidth. Although GPU vendors improve memory capacity and bandwidth using 3D memory technology (HBM), many important workloads with terabytes of data still cannot fit in the provided capacity and are bound by the provided bandwidth. With a limited GPU memory capacity, programmers should handle the data movement between GPU and host memories by themselves, causing a significant programming burden. To improve programming

Estilos ABNT, Harvard, Vancouver, APA, etc.

24

Mohseni, Milad, Ahmed Alkhayyat, P. Balaji Srikaanth, et al. "Analyzing Characteristics for Two-Step SET Operation Scheme for Improving Write Time in Nanoscale Phase-Change Memory (PCM)." Journal of Nanomaterials 2022 (September 9, 2022): 1–20. http://dx.doi.org/10.1155/2022/6822884.

Texto completo da fonte

Resumo:

PCM (phase-change memory) is a memory innovation that has gained prominence as a capacity-class memory for computer systems. It is made up of a tiny functional amount of phase-change material that is located in the middle of two electrodes. In PCM, data is kept by utilizing the difference in electrical resistance between a crystalline phase, which has a high resistance, and its amorphous phase, which has a low resistance. Using electrical pulses, the phase-change material would be shifted from a high to the low conductive region and conversely. However, the device’s material science concerned

Estilos ABNT, Harvard, Vancouver, APA, etc.

25

Lei, Xin-Qing, Jia-He Zhu, Da-Wei Wang, and Wen-Sheng Zhao. "Design for Ultrahigh-Density Vertical Phase Change Memory: Proposal and Numerical Investigation." Electronics 11, no. 12 (2022): 1822. http://dx.doi.org/10.3390/electronics11121822.

Texto completo da fonte

Resumo:

The integration level is a significant index that can be used to characterize the performance of non-volatile memory devices. This paper proposes innovative design schemes for high-density integrated phase change memory (PCM). In these schemes, diploid and four-fold memory units, which are composed of nano-strip film GST-based memory cells, are employed to replace the memory unit of a conventional vertical PCM array. As the phase transformation process of the phase change material involves the coupling of electrical and thermal processes, an in-house electrothermal coupling simulator is develo

Estilos ABNT, Harvard, Vancouver, APA, etc.

26

Lewis, Matthew, and Lucien N. Brush. "Impact of solid–liquid interfacial thermodynamics on phase-change memory RESET scaling." Nanotechnology 33, no. 20 (2022): 205204. http://dx.doi.org/10.1088/1361-6528/ac512c.

Texto completo da fonte

Resumo:

Abstract A model of the RESET melting process in conventional phase-change memory (PCM) devices is constructed in which the Gibbs–Thomson (GT) effect, representing local equilibrium at the solid–liquid interface, is included as an interfacial condition for the electro-thermal model of the PCM device. A comparison is made between the GT model and a commonly used model in which the interfacial temperature is fixed at the bulk melting temperature of the PCM material. The model is applied to conventional PCM designs in which a dome-shaped liquid/amorphous region is formed. Two families of solution

Estilos ABNT, Harvard, Vancouver, APA, etc.

27

Gonzalez-Alberquilla, Rodrigo, Fernando Castro, Luis Pinuel, and Francisco Tirado. "CEPRAM: Compression for Endurance in PCM RAM." Journal of Circuits, Systems and Computers 26, no. 11 (2017): 1750167. http://dx.doi.org/10.1142/s0218126617501675.

Texto completo da fonte

Resumo:

We deal with the endurance problem of Phase Change Memories (PCM) by proposing Compression for Endurance in PCM RAM [Formula: see text]CEPRAM[Formula: see text], a technique to elongate the lifespan of PCM-based main memory through compression. We introduce a total of three compression schemes based on already existent schemes, but targeting compression for PCM-based systems. We do a two-level evaluation. First, we quantify the performance of the compression, in terms of compressed size, bit-flips and how they are affected by errors. Next, we simulate these parameters in a statistical simulato

Estilos ABNT, Harvard, Vancouver, APA, etc.

28

Qiao, Yang, Jin Zhao, Haodong Sun, et al. "Pt Modified Sb2Te3 Alloy Ensuring High−Performance Phase Change Memory." Nanomaterials 12, no. 12 (2022): 1996. http://dx.doi.org/10.3390/nano12121996.

Texto completo da fonte

Resumo:

Phase change memory (PCM), due to the advantages in capacity and endurance, has the opportunity to become the next generation of general−purpose memory. However, operation speed and data retention are still bottlenecks for PCM development. The most direct way to solve this problem is to find a material with high speed and good thermal stability. In this paper, platinum doping is proposed to improve performance. The 10-year data retention temperature of the doped material is up to 104 °C; the device achieves an operation speed of 6 ns and more than 3 × 105 operation cycles. An excellent perform

Estilos ABNT, Harvard, Vancouver, APA, etc.

29

Zhang, Zhong Hua, San Nian Song, Zhi Tang Song, et al. "Performance Improvement of Phase Change Memory Cell by Using a Tantalum Pentoxide Buffer Layer." Materials Science Forum 848 (March 2016): 425–29. http://dx.doi.org/10.4028/www.scientific.net/msf.848.425.

Texto completo da fonte

Resumo:

The performance of phase change memory (PCM) cell, based on Ti0.5Sb2Te3, was significantly improved by using a tantalum dioxide buffer layer. The presence of a buffer layer reduced the reset voltage of the PCM cell. The theoretical thermal simulation and calculation for the reset process were conducted to analyze the thermal effect of the titanium dioxide heating layer. The improved performance of the PCM cell with dioxide clad layer can be attributed to the fact that the buffer layer not only acted as heating layer but also efficiently reduced the cell dissipated power.

Estilos ABNT, Harvard, Vancouver, APA, etc.

30

Song, Zhitang, Daolin Cai, Yan Cheng, et al. "12-state multi-level cell storage implemented in a 128 Mb phase change memory chip." Nanoscale 13, no. 23 (2021): 10455–61. http://dx.doi.org/10.1039/d1nr00100k.

Texto completo da fonte

Estilos ABNT, Harvard, Vancouver, APA, etc.

31

Yin, You, and Sumio Hosaka. "Crystal Growth Suppression by N-Doping into Chalcogenide for Application to Next-Generation Phase Change Memory." Key Engineering Materials 497 (December 2011): 101–5. http://dx.doi.org/10.4028/www.scientific.net/kem.497.101.

Texto completo da fonte

Resumo:

In this work, we investigate the effect of the N-doping on microstructure and electrical properties of chalcogenide Ge2Sb2Te5(GST) films for application to multilevel-storage phase change memory (PCM). Crystal size can be markedly reduced from 16 nm to 5 nm by N-doping into GST. The crystal growth suppression is believed to be controlled by distributed fine nitride particles. The resistivity of N-GST as a function of annealing temperature exhibits a gradual change due to the crystal growth suppression. The characteristics imply that N-GST is suitable for application to multilevel-storage PCM a

Estilos ABNT, Harvard, Vancouver, APA, etc.

32

Kim, Jeong-Geun, Shin-Dug Kim, and Su-Kyung Yoon. "Q-Selector-Based Prefetching Method for DRAM/NVM Hybrid Main Memory System." Electronics 9, no. 12 (2020): 2158. http://dx.doi.org/10.3390/electronics9122158.

Texto completo da fonte

Resumo:

This research is to design a Q-selector-based prefetching method for a dynamic random-access memory (DRAM)/ Phase-change memory (PCM)hybrid main memory system for memory-intensive big data applications generating irregular memory accessing streams. Specifically, the proposed method fully exploits the advantages of two-level hybrid memory systems, constructed as DRAM devices and non-volatile memory (NVM) devices. The Q-selector-based prefetching method is based on the Q-learning method, one of the reinforcement learning algorithms, which determines a near-optimal prefetcher for an application’s

Estilos ABNT, Harvard, Vancouver, APA, etc.

33

Xu, Zhehao, Xiao Su, Sicong Hua, Jiwei Zhai, Sannian Song, and Zhitang Song. "Non-volatile multi-level cell storage via sequential phase transition in Sb₇Te₃/GeSb₆Te multilayer thin film." Nanotechnology 33, no. 7 (2021): 075701. http://dx.doi.org/10.1088/1361-6528/ac3613.

Texto completo da fonte

Resumo:

Abstract For high-performance data centers, huge data transfer, reliable data storage and emerging in-memory computing require memory technology with the combination of accelerated access, large capacity and persistence. As for phase-change memory, the Sb-rich compounds Sb7Te3 and GeSb6Te have demonstrated fast switching speed and considerable difference of phase transition temperature. A multilayer structure is built up with the two compounds to reach three non-volatile resistance states. Sequential phase transition in a relationship with the temperature is confirmed to contribute to differen

Estilos ABNT, Harvard, Vancouver, APA, etc.

34

Meng, Yingjie, Yimin Chen, Kexin Peng, et al. "GeTe ultrathin film based phase-change memory with extreme thermal stability, fast SET speed, and low RESET power energy." AIP Advances 13, no. 3 (2023): 035205. http://dx.doi.org/10.1063/5.0138286.

Texto completo da fonte

Resumo:

We designed the phase-change memory (PCM) cell based on ultrathin GeTe film (∼10 nm) and homemade nanoscale electrode filling craft to improve data retention ability and reduce programming energy, respectively. It was found that the temperature for ten years’ data retention of this ultrathin GeTe film is 160 ± 32.8 °C, which is much higher than that of conventional Ge2Sb2Te5 (GST, 83 ± 20.6 °C) film. Benefit to the nature of fragile-to-strong crossover behavior in GeTe supercooled liquids that was confined in a two-dimension structure, a fast SET speed of 6 ns is also detected in this ultrathi

Estilos ABNT, Harvard, Vancouver, APA, etc.

35

Yun, Ji-Tae, Su-Kyung Yoon, Jeong-Geun Kim, Bernd Burgstaller, and Shin-Dug Kim. "Regression Prefetcher with Preprocessing for DRAM-PCM Hybrid Main Memory." IEEE Computer Architecture Letters 17, no. 2 (2018): 163–66. http://dx.doi.org/10.1109/lca.2018.2841835.

Texto completo da fonte

Estilos ABNT, Harvard, Vancouver, APA, etc.

36

Pourshirazi, Bahareh, Majed Valad Beigi, Zhichun Zhu, and Gokhan Memik. "Writeback-Aware LLC Management for PCM-Based Main Memory Systems." ACM Transactions on Design Automation of Electronic Systems 24, no. 2 (2019): 1–19. http://dx.doi.org/10.1145/3292009.

Texto completo da fonte

Estilos ABNT, Harvard, Vancouver, APA, etc.

37

Yoon, Su-Kyung, Jitae Yun, Jung-Geun Kim, and Shin-Dug Kim. "Self-Adaptive Filtering Algorithm with PCM-Based Memory Storage System." ACM Transactions on Embedded Computing Systems 17, no. 3 (2018): 1–23. http://dx.doi.org/10.1145/3190856.

Texto completo da fonte

Estilos ABNT, Harvard, Vancouver, APA, etc.

38

El-Hassan, Nemat H., Nandha Thulasiraman Kumar, and Haider Abbas F. Almurib. "Modelling of wire resistance effect in PCM-based nanocrossbar memory." Journal of Engineering 2016, no. 10 (2016): 357–62. http://dx.doi.org/10.1049/joe.2016.0212.

Texto completo da fonte

Estilos ABNT, Harvard, Vancouver, APA, etc.

39

Yin, You, Rosalena Irma Alip, Yu Long Zhang, Ryota Kobayashi, and Sumio Hosaka. "Multi-Level Storage in Lateral Phase Change Memory: From 3 to 16 Resistance Levels." Key Engineering Materials 534 (January 2013): 131–35. http://dx.doi.org/10.4028/www.scientific.net/kem.534.131.

Texto completo da fonte

Resumo:

Here, we report multi-level storage (MLS) in multi-layer (ML) and single-layer (SL) phase change memories (PCM). For the former ML-PCM device, the active medium with two layers of chalcogenide consists of a top 30 nm TiN/180 nm SbTeN/20 nm TiN/bottom 120 nm SbTeN stacked multi-layer. Three stable and distinct resistance states are demonstrated in both static and dynamic switching characteristics of the multi-layer devices. For the latter SL-PCM device, the active medium with only one layer of chalcogenide consists of a top 50 nm TiN/150 nm SbTeN. We demonstrate that the number of distinguishab

Estilos ABNT, Harvard, Vancouver, APA, etc.

40

Gafner, Yuri Ya, Svetlana L. Gafner, and Daria A. Ryzhkova. "Estimating Ag-Cu Nanoalloy Applicability for PCM Data Recording." Solid State Phenomena 310 (September 2020): 47–52. http://dx.doi.org/10.4028/www.scientific.net/ssp.310.47.

Texto completo da fonte

Resumo:

The paper studies applicability of individual particles of Ag-Cu nanoalloys as data bits in the next generation memory devices constructed on the phase change memory principle. To fulfill this task, the structure formation was simulated with the molecular dynamics method on cooling from the melt of Ag-Cu nanoparticles of the diameter of 2.0 – 8.0 nm of different chemical compositions (with copper content in the alloy from 10 to 50 percent), based on the modified tight-binding potential (TB-SMA). The authors investigated the influence of the size effects and the heat removal rate on the formati

Estilos ABNT, Harvard, Vancouver, APA, etc.

41

Nguyen, Huu Tan, Andrzej Kusiak, Jean Luc Battaglia, et al. "Thermal Properties of In-Sb-Te Thin Films for Phase Change Memory Application." Advances in Science and Technology 95 (October 2014): 113–19. http://dx.doi.org/10.4028/www.scientific.net/ast.95.113.

Texto completo da fonte

Resumo:

Phase change memories (PCM) are typically based on compounds of the Ge-Sb-Te (GST) ternary system. Nevertheless, a major drawback of PCM devices based on GST is the low crystallization temperature, which prevents the fulfillment of automotive-level or military-grade requirements (125°C continuous operation). To overcome this limitation, alloys belonging to the In-Sb-Te (IST) system have been proposed, which have demonstrated high crystallization temperature, and fast switching. Thermal properties of the chalcogenide alloy and of its interfaces within the PCM cell are key parameters versus the

Estilos ABNT, Harvard, Vancouver, APA, etc.

42

Liu, Guang Yu, Liang Cai Wu, Zhi Tang Song, Feng Rao, San Nian Song, and Yan Cheng. "Stability of Sb₂Te Crystalline Films for Phase Change Memory." Materials Science Forum 898 (June 2017): 1829–33. http://dx.doi.org/10.4028/www.scientific.net/msf.898.1829.

Texto completo da fonte

Resumo:

Stability is one of the most important criterions to judge the quality of products, especially for the phase-change memory (PCM), which is regarded as the most promising candidate for next-generation non-volatile memory. Due to the lack of resistance stability, read errors can occur easily and the reliability of PCM will be influenced. Using Sb2Te as a base material, the resistance stability of Sb2Te was studied, and the results indicated that in the whole cooling process, the resistance of Sb2Te crystalline film was extremely steady under different annealing temperatures and different cooling

Estilos ABNT, Harvard, Vancouver, APA, etc.

43

Yin, You, and Sumio Hosaka. "Proposed Phase-Change Memory with a Step-Like Channel for High-Performance Multi-State Storage." Key Engineering Materials 459 (December 2010): 145–50. http://dx.doi.org/10.4028/www.scientific.net/kem.459.145.

Texto completo da fonte

Resumo:

Lateral rectangular (R-) and step-like (S-) channel phase-change memory (PCM) cell structures are numerically analyzed for multi-state storage based on their temperature distributions and their programming characteristics. The S-PCM cell is characterized by the sequentially melted sub-channel and step-like programming characteristics. From the viewpoint of the performance for multi-state storage, the step-like characteristics indicate high controllability for its application of multi-state storage.

Estilos ABNT, Harvard, Vancouver, APA, etc.

44

Lin, Shu-Yen, and Shao-Cheng Wang. "Thermal-constrained memory management for three-dimensional DRAM-PCM memory with deep neural network applications." Microprocessors and Microsystems 89 (March 2022): 104444. http://dx.doi.org/10.1016/j.micpro.2022.104444.

Texto completo da fonte

Estilos ABNT, Harvard, Vancouver, APA, etc.

45

Grimonia, E., M. R. C. Andhika, M. F. N. Aulady, R. V. C. Rubi, and N. L. Hamidah. "Thermal Management System Using Phase Change Material for Lithium-ion Battery." Journal of Physics: Conference Series 2117, no. 1 (2021): 012005. http://dx.doi.org/10.1088/1742-6596/2117/1/012005.

Texto completo da fonte

Resumo:

Abstract The lithium-ion battery is promising energy storage that provides proper stability, no memory effect, low self-discharge rate, and high energy density. During its usage, batteries generate heat caused by energy loss due to the transition of chemical energy to electricity and the electron transfer cycle. Consequently, a thermal management system by cooling methods in the battery is needed to control heat. One of the cooling methods is a passive cooling system using a phase change material (PCM). PCM can accommodate a large amount of heat through small dimensions. It is easy to apply an

Estilos ABNT, Harvard, Vancouver, APA, etc.

46

Gupta, Pooja, Pooja Lohia, and D. K. Dwivedi. "Phase change memory: Operation, current challenges and future prospects." International Journal of Engineering, Science and Technology 13, no. 1 (2021): 93–97. http://dx.doi.org/10.4314/ijest.v13i1.14s.

Texto completo da fonte

Resumo:

Phase change memory has become known and most advanced resistive memory technology to meet the consumer's applications. It is a non-volatile random access memory. It plays a vital role in order to overcome the increasing demand of powerful data storage devices. In the present paper, advantages over other memories have been discussed in detail. This review focuses on the device operation of PCM. The current challenges and future prospects have also been outlined.

Estilos ABNT, Harvard, Vancouver, APA, etc.

47

Yang, Zhe, Dayou Zhang, Jingwei Cai, et al. "Joule heating induced non-melting phase transition and multi-level conductance in MoTe₂ based phase change memory." Applied Physics Letters 121, no. 20 (2022): 203508. http://dx.doi.org/10.1063/5.0127160.

Texto completo da fonte

Resumo:

Phase change memory (PCM) is considered as a leading candidate for next generation data storage as well as emerging computing device, but the advancement has been hampered by high switching energy due to the melting process and amorphous relaxation induced large resistance drift. Polymorphic crystal-crystal transition without amorphization in metal dichalcogenides (TMDs) could be employed to solve these issues. Yet, the mechanism is still controversy. A melting-free PCM made of two dimensional (2D) MoTe2, which exhibits unipolar resistive switching (RS) and multi-level states with substantiall

Estilos ABNT, Harvard, Vancouver, APA, etc.

48

FAN, Yu-Lei, and Xiao-Feng MENG. "Transaction Recovery Model of Databases Based on PCM and Flash Memory." Chinese Journal of Computers 36, no. 8 (2014): 1582–91. http://dx.doi.org/10.3724/sp.j.1016.2013.01582.

Texto completo da fonte

Estilos ABNT, Harvard, Vancouver, APA, etc.

49

Ruan, Shenchen, Haixia Wang, and Dongsheng Wang. "MAC : A Novel Systematically Multilevel Cache Replacement Policy for PCM Memory." Computer Applications: An International Journal 3, no. 2 (2016): 11–22. http://dx.doi.org/10.5121/caij.2016.3202.

Texto completo da fonte

Estilos ABNT, Harvard, Vancouver, APA, etc.

50

Fu, Yinjin, Yutong Lu, Zhiguang Chen wu, Yang Wu, and Nong Xiao. "Design and Simulation of Content-Aware Hybrid DRAM-PCM Memory System." IEEE Transactions on Parallel and Distributed Systems 33, no. 7 (2022): 1666–77. http://dx.doi.org/10.1109/tpds.2021.3123539.

Texto completo da fonte

Estilos ABNT, Harvard, Vancouver, APA, etc.

Oferecemos descontos em todos os planos premium para autores cujas obras estão incluídas em seleções literárias temáticas. Contate-nos para obter um código promocional único!