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Artigos de revistas sobre o tema "Surface Activated Bonding"

Autor: Grafiati

Publicado: 19 de outubro de 2024

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1

Takeuchi, Kai, Junsha Wang, Beomjoon Kim, Tadatomo Suga, and Eiji Higurashi. "Room temperature bonding of Au assisted by self-assembled monolayer." Applied Physics Letters 122, no. 5 (2023): 051603. http://dx.doi.org/10.1063/5.0128187.

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The surface activated bonding (SAB) technique enables room temperature bonding of metals, such as Au, by forming metal bonds between clean and reactive surfaces. However, the re-adsorption on the activated surface deteriorates the bonding quality, which limits the applicability of SAB for actual packaging processes of electronics. In this study, we propose and demonstrate the prolongation of the surface activation effect for room temperature bonding of Au by utilizing a self-assembled monolayer (SAM) protection. While the bonding without SAM fails after exposure of the activated Au surface to

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2

Lomonaco, Quentin, Karine Abadie, Jean-Michel Hartmann, et al. "Soft Surface Activated Bonding of Hydrophobic Silicon Substrates." ECS Meeting Abstracts MA2023-02, no. 33 (2023): 1601. http://dx.doi.org/10.1149/ma2023-02331601mtgabs.

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Surface Activated Bonding (SAB) is interesting for strong silicon to silicon bonding at room temperature without any annealing needed, afterwards (1). Although it is a well-known technique, the activation step, in particular, is scarcely documented. This paper offers insights about the impact of soft activation parameters on the amorphous region at the bonding interface. In addition, the adherence energy of hydrophobic silicon bonding with SAB is quantified to better understand bonding mechanisms. With very low dose and acceleration activation parameters, the surface preparation prior to bondi

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3

ODA, Tomohiro, Tomoyuki ABE, and Isao KUSUNOKI. "Wafer Bonding by Surface Activated Method." Shinku 49, no. 5 (2006): 310–12. http://dx.doi.org/10.3131/jvsj.49.310.

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4

Lomonaco, Quentin, Karine Abadie, Jean-Michel Hartmann, et al. "Soft Surface Activated Bonding of Hydrophobic Silicon Substrates." ECS Transactions 112, no. 3 (2023): 139–45. http://dx.doi.org/10.1149/11203.0139ecst.

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Surface Activated Bonding (SAB) is interesting for strong silicon to silicon bonding at room temperature without any annealing needed, afterwards. This technique has been recognized by the scientific community for more than two decades now and was used for numerous reviewed applications. Although it is a well-known technique, the activation step, in particular, is scarcely documented. This paper offers insights about the impact of soft activation parameters on the amorphous region at the bonding interface. In addition, the adherence energy of hydrophobic silicon after SAB bonding is quantified

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5

Yang, Song, Ningkang Deng, Yongfeng Qu, et al. "Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding." Materials 15, no. 9 (2022): 3115. http://dx.doi.org/10.3390/ma15093115.

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In order to optimize the process parameters of Si-Si wafer direct bonding at room temperature, Si-Si surface activated bonding (SAB) was performed, and the effect of the argon ion beam current for surface activation treatment on the Si-Si bonding quality was investigated. For the surface activation under the argon ion beam irradiation for 300 s, a smaller ion beam current (10~30 mA) helped to realize a lower percentage of area covered by voids and higher bonding strength. Especially with the surface activation under 30 mA, the bonded Si-Si specimen obtained the highest bonding quality, and its

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6

Yang, Song, Ningkang Deng, Yongfeng Qu, et al. "Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding." Materials 15, no. 9 (2022): 3115. http://dx.doi.org/10.3390/ma15093115.

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In order to optimize the process parameters of Si-Si wafer direct bonding at room temperature, Si-Si surface activated bonding (SAB) was performed, and the effect of the argon ion beam current for surface activation treatment on the Si-Si bonding quality was investigated. For the surface activation under the argon ion beam irradiation for 300 s, a smaller ion beam current (10~30 mA) helped to realize a lower percentage of area covered by voids and higher bonding strength. Especially with the surface activation under 30 mA, the bonded Si-Si specimen obtained the highest bonding quality, and its

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7

Yang, Song, Ningkang Deng, Yongfeng Qu, et al. "Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding." Materials 15, no. 9 (2022): 3115. http://dx.doi.org/10.3390/ma15093115.

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In order to optimize the process parameters of Si-Si wafer direct bonding at room temperature, Si-Si surface activated bonding (SAB) was performed, and the effect of the argon ion beam current for surface activation treatment on the Si-Si bonding quality was investigated. For the surface activation under the argon ion beam irradiation for 300 s, a smaller ion beam current (10~30 mA) helped to realize a lower percentage of area covered by voids and higher bonding strength. Especially with the surface activation under 30 mA, the bonded Si-Si specimen obtained the highest bonding quality, and its

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8

Suga, Tadatomo, Fengwen Mu, Masahisa Fujino, Yoshikazu Takahashi, Haruo Nakazawa, and Kenichi Iguchi. "Silicon carbide wafer bonding by modified surface activated bonding method." Japanese Journal of Applied Physics 54, no. 3 (2015): 030214. http://dx.doi.org/10.7567/jjap.54.030214.

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9

He, Ran, Masahisa Fujino, Akira Yamauchi, and Tadatomo Suga. "Novel hydrophilic SiO2wafer bonding using combined surface-activated bonding technique." Japanese Journal of Applied Physics 54, no. 3 (2015): 030218. http://dx.doi.org/10.7567/jjap.54.030218.

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10

SUGA, Tadatomo. "Low Temperature Bonding for 3D Integration-Surface Activated Bonding (SAB)." Hyomen Kagaku 35, no. 5 (2014): 262–66. http://dx.doi.org/10.1380/jsssj.35.262.

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11

Suga, Tadatomo. "Low Temperature Bonding by Means of the Surface Activated Bonding Method." Materia Japan 35, no. 5 (1996): 496–500. http://dx.doi.org/10.2320/materia.35.496.

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12

Kim, T. H., M. M. R. Howlader, T. Itoh, and T. Suga. "Room temperature Cu–Cu direct bonding using surface activated bonding method." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 21, no. 2 (2003): 449–53. http://dx.doi.org/10.1116/1.1537716.

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13

Chang, Chao Cheng. "Molecular Dynamics Simulation of Aluminium Thin Film Surface Activated Bonding." Key Engineering Materials 486 (July 2011): 127–30. http://dx.doi.org/10.4028/www.scientific.net/kem.486.127.

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This study used molecular dynamics simulations with an embedded-atom method (EAM) potential to investigate the effect of surface roughness on the surface activated bonding (SAB) of aluminium thin films. The simulations started with the bonding process and followed by the tensile test for estimating bonding strength. By averaging the atomic stresses over the entire system, the stress-time curves for the bonded films under a tensile condition were predicted. Moreover, the evolution of the crystal structure in the local atomic order was examined by the common neighbour analysis. The simulated res

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14

UTSUMI, Jun, Kensuke IDE, and Yuko ICHIYANAGI. "Room Temperature Wafer Bonding by Surface Activated Method." Hyomen Kagaku 38, no. 2 (2017): 72–76. http://dx.doi.org/10.1380/jsssj.38.72.

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15

Kerepesi, Péter, Bernhard Rebhan, Matthias Danner, et al. "Oxide-Free SiC-SiC Direct Wafer Bonding and Its Characterization." ECS Transactions 112, no. 3 (2023): 159–72. http://dx.doi.org/10.1149/11203.0159ecst.

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In this study, the feasibility of oxide-free room temperature wafer bonding process was demonstrated for 4H-SiC wafers with in situ surface oxide removal. The investigations covered three areas: incoming metrology of the original wafer, characterization of activated single wafer and analysis of bonded wafer pairs. The focus was on compositional, chemical, mechanical and morphological analysis of the surfaces and of the bonded interfaces. Incoming wafers were inspected whether they fulfill the requirements of wafer bonding, and activated wafers were characterized to measure the surface modifica

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16

Higurashi, Eiji, Yuta Sasaki, Ryuji Kurayama, et al. "Room-temperature direct bonding of germanium wafers by surface-activated bonding method." Japanese Journal of Applied Physics 54, no. 3 (2015): 030213. http://dx.doi.org/10.7567/jjap.54.030213.

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17

He, Ran, Masahisa Fujino, Akira Yamauchi, and Tadatomo Suga. "Combined surface-activated bonding technique for low-temperature hydrophilic direct wafer bonding." Japanese Journal of Applied Physics 55, no. 4S (2016): 04EC02. http://dx.doi.org/10.7567/jjap.55.04ec02.

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18

He, Ran, Masahisa Fujino, Akira Yamauchi, Yinghui Wang, and Tadatomo Suga. "Combined Surface Activated Bonding Technique for Low-Temperature Cu/Dielectric Hybrid Bonding." ECS Journal of Solid State Science and Technology 5, no. 7 (2016): P419—P424. http://dx.doi.org/10.1149/2.0201607jss.

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19

He, R., M. Fujino, A. Yamauchi, and T. Suga. "Combined Surface-Activated Bonding Technique for Low-Temperature Cu/SiO2 Hybrid Bonding." ECS Transactions 69, no. 6 (2015): 79–88. http://dx.doi.org/10.1149/06906.0079ecst.

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20

Suga, T. "Cu-Cu Room Temperature Bonding - Current Status of Surface Activated Bonding(SAB) -." ECS Transactions 3, no. 6 (2019): 155–63. http://dx.doi.org/10.1149/1.2357065.

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21

Shigetou, A., T. Itoh, and T. Suga. "Direct bonding of CMP-Cu films by surface activated bonding (SAB) method." Journal of Materials Science 40, no. 12 (2005): 3149–54. http://dx.doi.org/10.1007/s10853-005-2677-1.

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22

Mu, Fengwen, Kenichi Iguchi, Haruo Nakazawa, et al. "A comparison study: Direct wafer bonding of SiC–SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam." Applied Physics Express 9, no. 8 (2016): 081302. http://dx.doi.org/10.7567/apex.9.081302.

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23

Danner, Matthias, Bernhard Rebhan, Péter Kerepesi, and Wolfgang S. M. Werner. "Surface Activated Si-Si Wafer Bonding Using Different Ion Species." ECS Transactions 112, no. 3 (2023): 119–24. http://dx.doi.org/10.1149/11203.0119ecst.

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Surface activated bonding on wafer level is enabled by an advanced direct wafer bonding system for irradiation with different ion species. In this process, the native oxide of 200 mm Si wafers is sputter-removed and an amorphous layer is generated. After ion treatment, the wafers are bonded in ultra-high vacuum at room temperature. The impact of Ar, Kr and Xe ion irradiation on the amorphous layer thickness was investigated with the goal of optimizing the bonding process for establishing interfaces with electronic functionality. This was i.a. motivated by the fact, that the presence of an amor

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24

Danner, Matthias, Bernhard Rebhan, Péter Kerepesi, and Wolfgang S. M. Werner. "Surface Activated Si-Si Wafer Bonding Using Different Ion Species." ECS Meeting Abstracts MA2023-02, no. 33 (2023): 1599. http://dx.doi.org/10.1149/ma2023-02331599mtgabs.

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Surface activated bonding (SAB) on wafer level is enabled by the EVG ComBond® system for irradiation with different ion species. In this process, the native oxide of 200 mm Si wafers is sputter-removed, and an amorphous layer is generated. After ion treatment, the wafers are bonded in ultra-high vacuum (UHV) at room temperature. The impact of Ar, Kr and Xe ion irradiation on the amorphous layer thickness (ALT) was investigated with the goal of optimizing the bonding process. This was i.a. motivated by the fact, that the presence of an amorphous layer reduces the electrical conductivity across

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25

Abadie, Karine, Quentin Lomonaco, Laurent Michaud, Frank Fournel, and Christophe Morales. "(First Best Paper Award) Vacuum Quality Impact on Covalent Bonding." ECS Meeting Abstracts MA2023-02, no. 33 (2023): 1600. http://dx.doi.org/10.1149/ma2023-02331600mtgabs.

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As already described in the literature [1, 2, 3, 4], covalent bonding is based on direct bonding process. The first step of this process consists in creating dangling bonds at the wafer surface using an Ar+ ion bombardment. Then, the two activated surfaces are brought in contact, resulting in covalent bonds between them. Using silicon surfaces, no further annealing is required to enhance the bonding strength, as opposed to direct hydrophilic bonding. The adherence energy (Gc=2γc) of such Si/Si bond pairs reaches the silicon fracture energy (5J/m²). Indeed, all bonded samples break during doubl

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26

Lomonaco, Quentin, Karine Abadie, Christophe Morales, et al. "Stress Engineering in Germanium-Silicon Heterostructure Using Surface Activated Hot Bonding." ECS Transactions 109, no. 4 (2022): 277–87. http://dx.doi.org/10.1149/10904.0277ecst.

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The manufacturing of heterostructures is interesting in many fields such as photonics, solar energy production and quantum technologies. This paper, dedicated to germanium on silicon heterostructure manufacturing and stress engineering, builds up on LETI and EVGroup’s hot bonding technology (1). The coefficients of thermal expansion (CTE) mismatch between germanium and silicon is used to induce some in-plane tensile stress in a thin germanium layer transferred by the Smart CutTM technique onto a silicon substrate. In this approach, a bulk germanium wafer is directly bonded on a bulk silicon wa

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27

Choowitsakunlert, Salinee, Kenji Takagiwa, Takuya Kobashigawa, Nariaki Hosoya, Rardchawadee Silapunt, and Hideki Yokoi. "Fabrication Processes of SOI Structure for Optical Nonreciprocal Devices." Key Engineering Materials 777 (August 2018): 107–12. http://dx.doi.org/10.4028/www.scientific.net/kem.777.107.

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Fabrication processes of a magneto-optic waveguide with a Si guiding layer for an optical isolator employing a nonreciprocal guided-radiation mode conversion are investigated. The optical isolator is constructed on a silicon-on-insulator (SOI) structure. The magneto-optic waveguide is fabricated by bonding the Si guiding layer with a cerium-substituted yttrium iron garnet (Ce:YIG). The relationship of waveguide geometric parameters is determined at a wavelength of 1550 nm. The results show that larger tolerance for isolator operation can be obtained at smaller gaps between Si and Ce:YIG. Bondi

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28

Kim, Kyung Hoon, Soon Hyung Hong, Seung Il Cha, Sung Chul Lim, Hyouk Chon Kwon, and Won Kyu Yoon. "Bonding Quality of Copper-Nickel Fine Clad Metal Prepared by Surface Activated Bonding." MATERIALS TRANSACTIONS 51, no. 4 (2010): 787–92. http://dx.doi.org/10.2320/matertrans.m2009354.

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29

He, R., M. Fujino, A. Yamauchi, and T. Suga. "Combined Surface Activated Bonding Technique for Hydrophilic SiO2-SiO2 and Cu-Cu Bonding." ECS Transactions 75, no. 9 (2016): 117–28. http://dx.doi.org/10.1149/07509.0117ecst.

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30

Takagi, H., Y. Kurashima, and T. Suga. "(Invited) Surface Activated Wafer Bonding; Principle and Current Status." ECS Transactions 75, no. 9 (2016): 3–8. http://dx.doi.org/10.1149/07509.0003ecst.

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31

Li, Y., S. Wang, B. Sun, et al. "Room Temperature Wafer Bonding by Surface Activated ALD- Al2O3." ECS Transactions 50, no. 7 (2013): 303–11. http://dx.doi.org/10.1149/05007.0303ecst.

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32

Howlader, M. M. R., H. Okada, T. H. Kim, T. Itoh, and T. Suga. "Wafer Level Surface Activated Bonding Tool for MEMS Packaging." Journal of The Electrochemical Society 151, no. 7 (2004): G461. http://dx.doi.org/10.1149/1.1758723.

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33

Takagi, H., K. Kikuchi, R. Maeda, T. R. Chung, and T. Suga. "Surface activated bonding of silicon wafers at room temperature." Applied Physics Letters 68, no. 16 (1996): 2222–24. http://dx.doi.org/10.1063/1.115865.

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Howlader, M. M. R., T. Suga, A. Takahashi, K. Saijo, S. Ozawa, and K. Nanbu. "Surface activated bonding of LCP/Cu for electronic packaging." Journal of Materials Science 40, no. 12 (2005): 3177–84. http://dx.doi.org/10.1007/s10853-005-2681-5.

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35

Gardner, Douglas J., Jeffrey G. Ostmeyer, and Thomas J. Elder. "Bonding Surface Activated Hardwood Flakeboard with Phenol-Formaldehyde Resin." Holzforschung 45, no. 3 (1991): 215–22. http://dx.doi.org/10.1515/hfsg.1991.45.3.215.

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36

Kim, Kyung Hoon, Sung Chul Lim, and Hyouk Chon Kwon. "The Effects of Heat Treatment on the Bonding Strength of Surface-Activated Bonding (SAB)-Treated Copper-Nickel Fine Clad Metals." Materials Science Forum 654-656 (June 2010): 1932–35. http://dx.doi.org/10.4028/www.scientific.net/msf.654-656.1932.

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Surface activated bonding (SAB) is a novel method for the precise joining of dissimilar materials. It is based on the concept that two atomically clean solid surfaces can develop a strong adhesive force between them when they are brought into contact at high vacuum condition without high deformation at a 40~90%. With this SAB process, the effects of heat treatment on the bonding strength of surface-activated bonding (SAB)-treated copper-nickel fine clad metals were investigated. An increase in the SAB rolling load of the copper-nickel fine clad metals increased the peel strength after heat tre

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37

Lomonaco, Quentin, Karine Abadie, Christophe Morales, et al. "Stress Engineering in Germanium-Silicon Heterostructure Using Surface Activated Hot Bonding." ECS Meeting Abstracts MA2022-02, no. 32 (2022): 1219. http://dx.doi.org/10.1149/ma2022-02321219mtgabs.

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The manufacturing of heterostructures is interesting in fields such as photonics(1), solar energy production(2) and quantum technologies(3). This paper, dedicated to germanium on silicon heterostructure manufacturing and stress engineering, builds up on Ref. (4) findings. We are using the differences in terms of coefficients of thermal expansion (CTE) between germanium and silicon, to induce a tensile stress in a thin germanium layer transferred by the Smart CutTM [1] technique onto a silicon substrate. In this approach, a bulk germanium wafer is directly bonded on a bulk silicon wafer, using

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38

Chan, Cho X. J., and Peter N. Lipke. "Role of Force-Sensitive Amyloid-Like Interactions in Fungal Catch Bonding and Biofilms." Eukaryotic Cell 13, no. 9 (2014): 1136–42. http://dx.doi.org/10.1128/ec.00068-14.

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ABSTRACTTheCandida albicansAls adhesin Als5p has an amyloid-forming sequence that is required for aggregation and formation of model biofilms on polystyrene. Because amyloid formation can be triggered by force, we investigated whether laminar flow could activate amyloid formation and increase binding to surfaces. ShearingSaccharomyces cerevisiaecells expressing Als5p orC. albicansat 0.8 dyne/cm2increased the quantity and strength of cell-to-surface and cell-to-cell binding compared to that at 0.02 dyne/cm2. Thioflavin T fluorescence showed that the laminar flow also induced adhesin aggregation

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39

Klokkevold, Katherine N., Weston Keeven, Dong Hun Lee, et al. "Low-temperature metal/Zerodur heterogeneous bonding through gas-phase processed adhesion promoting interfacial layers." AIP Advances 12, no. 10 (2022): 105224. http://dx.doi.org/10.1063/6.0002114.

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The bonding of ceramic to metal has been challenging due to the dissimilar nature of the materials, particularly different surface properties and the coefficients of thermal expansion (CTE). To address the issues, gas phase-processed thin metal films were inserted at the metal/ceramic interface to modify the ceramic surface and, therefore, promote heterogeneous bonding. In addition, an alloy bonder that is mechanically and chemically activated at as low as 220 °C with reactive metal elements was utilized to bond the metal and ceramic. Stainless steel (SS)/Zerodur is selected as the metal/ceram

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40

Utsumi, Jun, Kensuke Ide, and Yuko Ichiyanagi. "Room temperature bonding of SiO2and SiO2by surface activated bonding method using Si ultrathin films." Japanese Journal of Applied Physics 55, no. 2 (2016): 026503. http://dx.doi.org/10.7567/jjap.55.026503.

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Takeuchi, Kai, Masahisa Fujino, Yoshiie Matsumoto, and Tadatomo Suga. "Mechanism of bonding and debonding using surface activated bonding method with Si intermediate layer." Japanese Journal of Applied Physics 57, no. 4S (2018): 04FC11. http://dx.doi.org/10.7567/jjap.57.04fc11.

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He, R., M. Fujino, A. Yamauchi, and T. Suga. "Combined Surface-Activated Bonding (SAB) Technologies for New Approach to Low Temperature Wafer Bonding." ECS Transactions 64, no. 5 (2014): 83–93. http://dx.doi.org/10.1149/06405.0083ecst.

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Matsumae, T., M. Nakano, Y. Matsumoto, and T. Suga. "Room Temperature Bonding of Polymer to Glass Wafers Using Surface Activated Bonding (SAB) Method." ECS Transactions 50, no. 7 (2013): 297–302. http://dx.doi.org/10.1149/05007.0297ecst.

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Kerepesi, Péter, Bernhard Rebhan, Matthias Danner, et al. "Oxide-Free SiC-SiC Direct Wafer Bonding and Its Characterization." ECS Meeting Abstracts MA2023-02, no. 33 (2023): 1603. http://dx.doi.org/10.1149/ma2023-02331603mtgabs.

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There are different requirements for the production process and the final product of SiC-SiC wafer bonding. The manufacturing of devices that are sensitive to high temperature processing – due to broadened doping profiles and induced thermal stresses – requires room temperature bonding with high bond strength, while for electrical devices, it is mandatory that the bonding interface with a thin amorphous layer is oxide-free.[1] Reduced complexity of processes is also an important point for the final production. Hence, the goal of this work was to perform and characterize direct bonding of SiC-S

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45

Zhang, Wenting, Caorui Zhang, Junmin Wu, et al. "Low Temperature Hydrophilic SiC Wafer Level Direct Bonding for Ultrahigh-Voltage Device Applications." Micromachines 12, no. 12 (2021): 1575. http://dx.doi.org/10.3390/mi12121575.

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SiC direct bonding using O2 plasma activation is investigated in this work. SiC substrate and n− SiC epitaxy growth layer are activated with an optimized duration of 60s and power of the oxygen ion beam source at 20 W. After O2 plasma activation, both the SiC substrate and n− SiC epitaxy growth layer present a sufficient hydrophilic surface for bonding. The two 4-inch wafers are prebonded at room temperature followed by an annealing process in an atmospheric N2 ambient for 3 h at 300 °C. The scanning results obtained by C-mode scanning acoustic microscopy (C-SAM) shows a high bonding uniformit

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46

Abadie, Karine, Quentin Lomonaco, Laurent Michaud, Frank Fournel, and Christophe Morales. "Vacuum Quality Impact on Covalent Bonding." ECS Transactions 112, no. 3 (2023): 125–37. http://dx.doi.org/10.1149/11203.0125ecst.

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Covalent bonding is based on a direct bonding process. The first step of this process consists in creating dangling bonds at the wafers surface. When the two activated surfaces are brought in contact, covalent bonds result between them. Dangling bonds are highly reactive. Any queue time between activation and bonding is crucial, as dangling bonds must be preserved. It can be even more difficult to preserve the dangling bonds in the case of bonding process in temperature. One way, commonly used, is to always stay under Ultra High Vacuum (UHV). However, the UHV environment may affect the bonding

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47

Shigekawa, Naoteru, Masashi Morimoto, Shota Nishida, and Jianbo Liang. "Surface-activated-bonding-based InGaP-on-Si double-junction cells." Japanese Journal of Applied Physics 53, no. 4S (2014): 04ER05. http://dx.doi.org/10.7567/jjap.53.04er05.

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48

Saijo, Kinji, Kazuo Yoshida, Yoshihiko Isobe, Akio Miyachi, and Kazuyuki Koike. "Development of Clad Sheet Manufacturing Process by Surface Activated Bonding." Materia Japan 39, no. 2 (2000): 172–74. http://dx.doi.org/10.2320/materia.39.172.

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Liang, J., K. Furuna, M. Matsubara, M. Dhamrin, Y. Nishio, and N. Shigekawa. "Ultra-Thick Metal Ohmic Contact Fabrication Using Surface Activated Bonding." ECS Transactions 75, no. 9 (2016): 25–32. http://dx.doi.org/10.1149/07509.0025ecst.

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