Literatura académica sobre el tema "CMP polishing"
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Artículos de revistas sobre el tema "CMP polishing":
Lou, Chun Lan, Hai Yan Di, Qiang Fang, Tao Kong, Wei Feng Yao y Zhao Zhong Zhou. "Study on Groove Shape of CMP Polishing Pad: A Review". Advanced Materials Research 497 (abril de 2012): 278–83. http://dx.doi.org/10.4028/www.scientific.net/amr.497.278.
Liu, Zhi Xiang, Jian Guo Yao, Song Zhan Fan y Jian Xiu Su. "Study on the Preparation Technology of Fixed Abrasive Polishing Pad in Chemical Mechanical Polishing". Applied Mechanics and Materials 602-605 (agosto de 2014): 485–88. http://dx.doi.org/10.4028/www.scientific.net/amm.602-605.485.
Tso, Pei Lum, Shi Guo Liu y J. C. Wang. "The Development of an Ultrasonic Head for CMP Pad Conditioning". Advanced Materials Research 500 (abril de 2012): 275–80. http://dx.doi.org/10.4028/www.scientific.net/amr.500.275.
Son, Jungyu y Hyunseop Lee. "Preliminary Study on Polishing SLA 3D-Printed ABS-Like Resins for Surface Roughness and Glossiness Reduction". Micromachines 11, n.º 9 (8 de septiembre de 2020): 843. http://dx.doi.org/10.3390/mi11090843.
Zhang, Hui, Zi Feng Ni y Qing Zhong Li. "A Fine Atomization CMP Slurry for Copper". Advanced Materials Research 279 (julio de 2011): 271–74. http://dx.doi.org/10.4028/www.scientific.net/amr.279.271.
Zhang, Sheng Fang, Jian Xiu Su, Jia Xi Du y Ren Ke Kang. "Analysis on Contact Forms of Interface in Wafer CMP Based on Lubricating Behavior". Materials Science Forum 704-705 (diciembre de 2011): 313–17. http://dx.doi.org/10.4028/www.scientific.net/msf.704-705.313.
Sugimoto, Taku, Seiichi Suda y Koichi Kawahara. "Change in Slurry/Glass Interfacial Resistance by Chemical Mechanical Polishing". MRS Advances 2, n.º 41 (2017): 2205–10. http://dx.doi.org/10.1557/adv.2017.335.
Fang, Treliant, Ping Chung Chen y Ming Hsun Lee. "A New Permanganate-Free Slurry for GaN-SiC CMP Applications". Materials Science Forum 1004 (julio de 2020): 199–205. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.199.
Guo, Zhi Xue, Jing Zhai, Hui Zhang y Qing Zhong Li. "The Effect of Speed Matching on the CMP Uniformity". Advanced Materials Research 189-193 (febrero de 2011): 4154–57. http://dx.doi.org/10.4028/www.scientific.net/amr.189-193.4154.
Zhang, Zhu Qing y Kang Lin Xing. "Study on 6H-SiC Crystal Substrate (0001) C Surface in FA-CMP Based on Diamond Particle". Applied Mechanics and Materials 727-728 (enero de 2015): 244–47. http://dx.doi.org/10.4028/www.scientific.net/amm.727-728.244.
Tesis sobre el tema "CMP polishing":
Ng, Dedy. "Nanoparticles removal in post-CMP (Chemical-Mechanical Polishing) cleaning". Thesis, Texas A&M University, 2005. http://hdl.handle.net/1969.1/4159.
Born, Melanie P. (Melanie Providencia) 1975. "Ice and abrasive particles : an alternative CMP polishing technique". Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/9570.
Kumar, Akhauri Prakash. "Agent based diagnostic system for the defect analysis during chemical mechanical polishing (CMP)". Heimsheim Jost-Jetter, 2005. http://deposit.d-nb.de/cgi-bin/dokserv?idn=976561247.
Osorno, Andres. "Dynamic, In-Situ Pressure Measurements during CMP". Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7497.
Sampurno, Yasa. "Fundamental Consumables Characterization of Advanced Dielectric and Metal Chemical Mechanical Planarization Processes". Diss., The University of Arizona, 2008. http://hdl.handle.net/10150/194544.
Choi, Changhoon. "Kinetic study of copper chemistry in chemical mechanical polishing (CMP) by an in-situ real time measurement technique". [Ames, Iowa : Iowa State University], 2008.
Palla, Byron Joseph. "Mixed surfactant systems to control dispersion stability in severe environments for enhancing chemical mechanical polishing (CMP) of metal surfaces". [Florida] : State University System of Florida, 2000. http://etd.fcla.edu/etd/uf/2000/ana6408/byronpalla.PDF.
Title from first page of PDF file. Document formatted into pages; contains xvii, 174 p.; also contains graphics. Vita. Includes bibliographical references (p. 165-173).
Zantye, Parshuram B. "Processing, Reliability And Integration Issues In Chemical Mechanical Planarization". [Tampa, Fla.] : University of South Florida, 2005. http://purl.fcla.edu/fcla/etd/SFE0001263.
Toth, Réka. "Mécanismes physico-chimiques du polissage". Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066763.
Chemical Mechanical Polishing (CMP) consists in applying a slurry of colloidal particles onto a solid surface called substrate, through a pressure applied with a rotating polymeric pad. A silica substrate and CeO2 particles were chosen as reference system to study the mechanism of CMP. Macroscopic studies have shown the effect of the concentration and the size of abrasive particles, as well as the importance of pH and ionic strength. The mechanism was more thoroughly studied by recirculating the slurry in fixed conditions. Surface interactions between the substrate and the particles were studied thanks to a multi-instrumental approach (zeta potential, ATR-FTIR, TEM, SAXS, chemical analysis, AFM).A good understanding of the surfaces at stake is necessary to study the mechanism of polishing. Acid-basic and redox properties of the CeO2 surface were therefore investigated. Finally, the surface chemistry of the abrasive particles were modified (synthesis of core-shell particles and solid solutions), and different ceria morphologies were tested
Kumar, Akhauri Prakash [Verfasser]. "Agent based diagnostic system for the defect analysis during chemical mechanical polishing (CMP) / Universität Stuttgart, IFF, Institut für Industrielle Fertigung und Fabrikbetrieb ... Akhauri Prakash Kumar". Heimsheim : Jost-Jetter, 2005. http://d-nb.info/976561247/34.
Libros sobre el tema "CMP polishing":
Marinescu, Ioan D., Toshiro K. Doi y Syuhei Kurokawa. Advances in CMP/polishing technologies for the manufacture of electronic devices. Oxford: Elsevier, 2012.
E, Materials Research Society Meeting Symposium. Science and technology of chemical mechanical planarization (CMP): Symposium held April 14-16, 2009, San Francisco, California, U.S.A. Warrendale, Penn: Materials Research Society, 2010.
Texas Engineering Extension Service (TEEX) Staff. CMP (Chemical Mechanical Polishing). TEEX/Technology and Economic Development, 1998.
Advances in CMP Polishing Technologies. William Andrew, 2018.
Advances in CMP Polishing Technologies. Elsevier, 2012. http://dx.doi.org/10.1016/c2009-0-20355-2.
Babu, Suryadevara. Advances in Chemical Mechanical Planarization (CMP). Elsevier Science & Technology, 2016.
Seimitsu Kōgakkai. Puranarizēshon CMP to Sono Ōyō Gijutsu Senmon Iinkai., ed. Handōtai CMP yōgo jiten. 8a ed. Tōkyō: Ōmusha, 2008.
Seimitsu Kōgakkai. Puranarizēshon CMP to Sono Ōyō Gijutsu Senmon Iinkai., ed. Handōtai CMP yōgo jiten. 8a ed. Tōkyō: Ōmusha, 2008.
Lee, Seung-Mahn. Characterization of chemical interactions during chemical mechanical polishing (CMP) of copper. 2003.
Choi, Wonseop. Study of interfacial interaction during chemical mechanical polishing (CMP) of dielectric silicon dioxide. 2003.
Capítulos de libros sobre el tema "CMP polishing":
James, David B. "CMP Polishing Pads". En Chemical-Mechanical Planarization of Semiconductor Materials, 167–213. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-06234-0_6.
Danyluk, Steven y Sum Huan Ng. "Chemical Mechanical Polishing (CMP)". En Encyclopedia of Tribology, 366–70. Boston, MA: Springer US, 2013. http://dx.doi.org/10.1007/978-0-387-92897-5_610.
Borst, Christopher L., William N. Gill y Ronald J. Gutmann. "Chemical-Mechanical Planarization (CMP)". En Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses, 45–69. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-1165-6_3.
Borst, Christopher L., William N. Gill y Ronald J. Gutmann. "CMP of Organosilicate Glasses". En Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses, 97–118. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-1165-6_5.
Starosvetsky, D. y Y. Ein-Eli. "Electrochemical View of Copper Chemical-Mechanical Polishing (CMP)". En Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications, 359–78. New York, NY: Springer New York, 2009. http://dx.doi.org/10.1007/978-0-387-95868-2_24.
Borst, Christopher L., William N. Gill y Ronald J. Gutmann. "CMP of BCB and Silk Polymers". En Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses, 71–95. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-1165-6_4.
Borst, Christopher L., William N. Gill y Ronald J. Gutmann. "Low-κ CMP Model Based on Surface Kinetics". En Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses, 119–59. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-1165-6_6.
Ilie, Filip, Tiberiu Laurian y Constantin Tita. "Relating Friction and Processes Development during Chemical — Mechanical Polishing (CMP)". En Advanced Tribology, 571–75. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-03653-8_184.
Borst, Christopher L., William N. Gill y Ronald J. Gutmann. "Copper CMP Model Based Upon Fluid Mechanics and Surface Kinetics". En Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses, 161–80. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-1165-6_7.
Cheng, Jie. "Tribocorrosion Investigations of Cu/Ru Interconnect Structure During CMP". En Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect, 75–89. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-6165-3_4.
Actas de conferencias sobre el tema "CMP polishing":
Shiu, Pei-Jiun R. y Chao-Chang A. Chen. "Effect of mechanical polishing on copper in electrochemical-mechanical polishing". En 2014 International Conference on Planarization/CMP Technology (ICPT). IEEE, 2014. http://dx.doi.org/10.1109/icpt.2014.7017310.
Levert, Joseph A. y Chad S. Korach. "The Relative Friction Force Contributions of Polishing Pads and Slurries During Chemical Mechanical Polishing". En World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-63817.
Wan, Liew Siew y Chong Yew Siew. "ILD CMP Polishing Pad and Disk Characterization". En 2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). IEEE, 2022. http://dx.doi.org/10.1109/asmc54647.2022.9792492.
Hosokawa, Koichiro, Shoichiro Yoshida y Yoshiharu Ota. "The oxidant impact for Tungsten polishing". En 2014 International Conference on Planarization/CMP Technology (ICPT). IEEE, 2014. http://dx.doi.org/10.1109/icpt.2014.7017301.
Takami, Shinichiro, Shogaku Ide y Makoto Tabata. "Wafer edge roll-off improvement by protective agent in polishing slurry at double side polishing process". En 2014 International Conference on Planarization/CMP Technology (ICPT). IEEE, 2014. http://dx.doi.org/10.1109/icpt.2014.7017303.
Tsai, Jhy-Cherng, Yaw-Yi Shieh, Ming-Shih Tsai y Bau-Tong Dai. "Experimental Investigation on the Roles of Chemical Corrosion and Mechanical Polishing on Copper CMP". En ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-61072.
WATANABE, J., T. INAMURA, T. BEPPU y Y. MINAMIKAWA. "CMP CHARACTERISTICS AND POLISHING MACHINE IN ILD PLANARIZATION". En Proceedings of the International Symposium. WORLD SCIENTIFIC, 1997. http://dx.doi.org/10.1142/9789814317405_0011.
Yoon, Inho, Sum Huan Ng, Andres Osorno y Steven Danyluk. "Dishing and Erosion in Cu-CMP". En World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-63978.
Ng, Dedy, Milind Kulkarni, Hong Liang, Yeau-Ren Jeng y Pai-Yau Huang. "Nano-Particle Interaction During Chemical-Mechanical Polishing". En World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-63591.
Wang, Luling, Abhudaya Mishra, Benjamin Cruz y Richard Wen. "Cobalt polishing slurries for 10 nm and beyond". En 2014 International Conference on Planarization/CMP Technology (ICPT). IEEE, 2014. http://dx.doi.org/10.1109/icpt.2014.7017287.