Gotowe bibliografie tematyczne / IGBT Diode

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  1. Artykuły w czasopismach
  2. Rozprawy doktorskie
  3. Książki
  4. Części książek
  5. Streszczenia konferencji

Gotowa bibliografia na temat „IGBT Diode”

Autor: Grafiati
Data publikacji: 3 czerwca 2025
Data aktualizacji: 31 lipca 2025

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Artykuły w czasopismach na temat "IGBT Diode"

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Hobart, Karl D., Eugene A. Imhoff, Fritz J. Kub, et al. "Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT." Materials Science Forum 717-720 (May 2012): 941–44. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.941.

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The performance of Junction Barrier Schottky (JBS) diodes developed for medium voltage hard-switched Naval power conversion is reported. Nominally 60 A, 4.5kV rated JBS freewheeling diodes were paired with similarly rated Si IGBTs and evaluated for temperature dependent static and dynamic characteristics as well as HTRB and surge capability. The SiC JBS/Si IGBT pair was also directly compared to Si PiN diode/Si IGBT with similar ratings. Compared to Si, the SiC freewheeling diode produced over twenty times lower reverse recovery charge leading to approximately a factor-of-four-reduction in tur
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Li, Yu Zhu, Wei Jiang Ni, Zhe Yang Li, Yun Li, Chen Chen, and Xiao Jian Chen. "600V-30A 4H-SiC JBS and Si IGBT Hybrid Module." Materials Science Forum 679-680 (March 2011): 714–17. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.714.

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600V-30A 4H-SiC Junction Barrier Schottky（JBS）diodes were designed and fabricated using SiC epitaxy and device technology. SiC JBS diodes were packaged in Si IGBT module，and switching measurements were done at 125°C. As free-wheeling diode for Si IGBT, 600V SiC JBS diode was compared to 600V ultra-fast diode from International Rectifier. SiC diode achieved 90% recovery loss reduction and corresponding IGBT showed 30% lower turn-on loss. However, SiC JBS diode has larger on-state voltage drop due to small chip area. On-state power loss will be lowered by increasing SiC chip area.
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Liu, Ao, Gang Chen, Song Bai, Rui Li, and Wei Feng Sun. "Application of 1200V-8A SiC JBS Diodes in the Motor System." Applied Mechanics and Materials 347-350 (August 2013): 1530–34. http://dx.doi.org/10.4028/www.scientific.net/amm.347-350.1530.

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1200V-8A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on in-house SiC epitaxy and device technology. As a free-wheeling diode for the IGBT in inverter of motor system, the 1200V SiC JBS diode was compared to the Si ultra-fast diode from Fairchild Co. Ltd. The SiC diode achieved 88% recovery loss reduction and corresponding IGBT showed 35% lower turn-on loss. So, it will promote the application of motor system in high frequency and high efficiency.
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Sharma, Yogesh, P. Mumby-Croft, L. Ngwendson, et al. "6.5 kV Si/SiC Hybrid Power Module Technology." Materials Science Forum 963 (July 2019): 859–63. http://dx.doi.org/10.4028/www.scientific.net/msf.963.859.

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Substituting Si diodes with SiC Schottky diodes in Si insulated gate bipolar transistor (IGBT) modules is beneficial, as it can reduce power losses in electrical systems significantly. The fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present is not possible because of the Si diodes. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. Comparisons of the 6.5 kV Si and hybrid SiC at room temperature and high temperature have shown that the switc
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Yuan, Song, Yichong Li, Min Hou, Xi Jiang, Xiaowu Gong, and Yue Hao. "Analysis of the Operation Mechanism of Superjunction in RC-IGBT and a Novel Snapback-Free Partial Schottky Collector Superjunction RC-IGBT." Micromachines 15, no. 1 (2023): 73. http://dx.doi.org/10.3390/mi15010073.

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This paper explores the operation mechanism of the superjunction structure in RC-IGBTs based on carrier distribution and analyzes the advantages and challenges associated with its application in RC-IGBTs for the first time. A Partial Schottky Collector Superjunction Reverse Conduction IGBT (PSC-SJ-RC-IGBT) is proposed to address these issues. The new structure eliminates the snapback phenomenon. Furthermore, by leveraging the unipolar conduction of the Schottky diode and its fast turn-off characteristics, the proposed device significantly reduces the turn-off power consumption and reverse reco
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Wu, Wei, Yansong Li, Mingkang Yu, Chongbing Gao, Yulu Shu, and Yong Chen. "Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter." Micromachines 14, no. 4 (2023): 873. http://dx.doi.org/10.3390/mi14040873.

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In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics. It features a particular shortened P+ emitter (SE) in the diode part of RC-IGBT. Firstly, the shortened P+ emitter in the diode part can suppress the hole injection efficiency resulting in the reduced carriers extracted during the reverse recovery process. The peak of the reverse recovery current and switching loss of the built-in diode during reverse recovery is therefore lowered. Simulation results indicate
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Skibinski, G., D. Braun, D. Kirschnik, and R. Lukaszewski. "Developments in Hybrid Si – SiC Power Modules." Materials Science Forum 527-529 (October 2006): 1141–47. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1141.

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This paper investigates utilization of silicon carbide (SiC) Schottky power diodes as inverter Free Wheel Diodes (FWD) in a commercially available standard Econopak module also packaged with latest generation low-loss IGBT silicon. Static and switching characteristics of SiC diodes over standard module operating temperature 25 0C to 125 0C (298 0K - 398 0K) are measured. Module Turn-on, Turn-off and conduction losses vs. frequency are calculated and measured for three phase motor drive operation. Measurements are compared to standard modules using all Silicon (Si) IGBT- diode. System benefits
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Parker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, et al. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair." Materials Science Forum 717-720 (May 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.

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This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can contribute to carbon emissions reduction and the speed of adoption of electric vehicles, including hybrids, by enabling significant increases in the driving range. Two IGBT inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested and demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN di
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Sundaramoorthy, Vinoth, Andrei Mihaila, Lucas Spejo, Renato Amaral Minamisawa, and Lars Knoll. "Performance Comparison of 6.5 kV SiC PiN Diode with 6.5 kV SiC JBS and Si Diodes." Materials Science Forum 1062 (May 31, 2022): 588–92. http://dx.doi.org/10.4028/p-u12e6u.

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6.5 kV SiC PiN diode with JTE and p+ rings termination was fabricated and characterized. The static and dynamic performance of SiC PiN diode were compared with that of SiC JBS diode and silicon diode, while switched in combination with a silicon IGBT. SiC PiN provides clear advantage while operating at higher current densities (above 100 A/cm2) and had lower leakage current. When switched together with a silicon IGBT, they contribute to losses similar to that of a SiC JBS diode.
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Górecki, Paweł, and Krzysztof Górecki. "Electrothermal Averaged Model of a Diode-Transistor Switch Including IGBT and a Rapid Switching Diode." Energies 13, no. 12 (2020): 3033. http://dx.doi.org/10.3390/en13123033.

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This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode. The presented model has the form of subcircuits dedicated for simulation program with integrated circuit emphasis (SPICE) and it makes it possible to compute characteristics of DC–DC converters at the steady state considering self-heating phenomena, both in the diode and in IGBT. This kind of model allows computations of voltages, currents and internal temperatures of all used semiconductor devices at the steady state. The formulas
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Rozprawy doktorskie na temat "IGBT Diode"

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Wang, Yalan. "Controlled switching of high power IGBT/diode modules." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613291.

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Bryant, Angus Toby. "Simulation and optimisation of diode and IGBT interaction in a chopper cell." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597041.

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The insulated gate bipolar transistor (IGBT) is arguably the most important device currently used in power conversion at medium to high levels. This thesis presents a detailed analysis of IGBT and freewheel diode operation in the context of inductive switching, which accounts for the majority of power conversion processes. In particular, the consequences of the device behaviour on device and circuit interaction are examined. The behaviour of one device is shown to be tightly coupled to that of the other device and the circuit elements during switching. Performance, reliability, efficiency and
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Fock-Sui-Too, Jen-Luc. "Caractérisation et modélisation de composants IGBT et diode PIN dans leur environnement thermique sévère lié aux applications aéronautiques." Phd thesis, Université Paul Sabatier - Toulouse III, 2010. http://tel.archives-ouvertes.fr/tel-00525074.

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À l'heure où les préoccupations climatiques sont plus que jamais d'actualité, les problématiques du contrôle, de la gestion et de l'économie de l'énergie prennent une importance considérable dans notre société. Dans le secteur avionique, cela peut se traduire par une nécessité de réduction du poids des aéronefs afin d'économiser le kérosène consommé durant le vol, résultant au final à une réduction drastique d'émission de CO². En adéquation avec les problématiques d'économie d'énergie l'avion plus électrique crée depuis quelques années un nouvel engouement dans le monde aéronautique pour l'act
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Fock, Sui Too Jean-Luc. "Caractérisation et modélisation de composants IGBT et diode PiN dans leur environnement thermique sévère lié aux applications aéronautiques." Toulouse 3, 2010. http://thesesups.ups-tlse.fr/1094/.

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À l'heure où les préoccupations climatiques sont plus que jamais d'actualité, les problématiques du contrôle, de la gestion et de l'économie de l'énergie prennent une importance considérable dans notre société. Dans le secteur avionique, cela peut se traduire par une nécessité de réduction du poids des aéronefs afin d'économiser le kérosène consommé durant le vol, résultant au final à une réduction drastique d'émission de CO2. En adéquation avec les problématiques d'économie d'énergie l'avion plus électrique crée depuis quelques années un nouvel engouement dans le monde aéronautique pour l'act
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Simon, Tom. "Temperaturbestimmung an IGBTs und Dioden unter hohen Stoßstrombelastungen." Master's thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-166595.

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Diese Arbeit beschäftigt sich mit drei verschiedenen Temperaturmessmethoden VCE, VGTH sowie über die Messung der thermsichen Impedanz mit 10ms langen Lastimpulsen und vergleicht die Messergebnisse mit zwei Simulatoren. Dabei wird ein Schaltungs- sowie ein Halbleitersimulator verwendet und das bisherige Simulationsmodell angepasst.
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Jeannin, Pierre-Olivier. "Le transistor MOSFET en commutation : application aux associations série et parallèle de composants à grille isolée." Phd thesis, Grenoble INPG, 2001. http://www.theses.fr/2001INPG0033.

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L'augmentation des puissances commutées en électronique de puissance passe par l'association de composants élémentaires en série et en parallèle. Cette association se retrouve à différentes échelles : au sein des modules du commerce ou au niveau de l'association de modules dans un convertisseur statique. Les travaux dans ce domaine ne sont pas nouveaux, puisque de nombreux problèmes nuisant à l'association série ou parallèle ont été rencontrés dans le passé. Le but de cette thèse n'est pas de redécouvrir ces problèmes, ni leurs solutions, mais plutôt, par une étude systématique de la commutati
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Bareille, Michel. "Contribution à l'analyse des problèmes de compatibilité électromagnétique dans les circuits de l'électronique de puissance : la cellule de commutation IGBT + diode et son environnement." Toulouse, INSA, 2001. http://www.theses.fr/2001ISAT0027.

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La mise en œuvre de nouvelles réglementations européennes en 1996 a révélé un besoin important en méthodes de conception de circuits prenant en compte les phénomènes de pollution électromagnétique. Dans le domaine de l'Electronique de Puissance, ce constat s'accompagne de la nécessité de disposer de modèles spécifiques d'interrupteurs capables de décrire les phénomènes observés lors des commutations. Les travaux présentés dans ce mémoire concernent la mise en œuvre et l'implantation dans le logiciel SABER de modèles physiques distribués de composants de puissance (I. G. B. T. , diode) en vue d
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Jeannin, Pierre-Olivier. "Le transistor MOSFET en commutation : Application aux associations série et parallèle de composants à grille isolée." Phd thesis, Grenoble INPG, 2001. http://tel.archives-ouvertes.fr/tel-00549773.

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L'augmentation des puissances commutées en électronique de puissance passe par l'association de composants élémentaires en série et en parallèle. Cette association se retrouve à différentes échelles: au sein des modules du commerce ou au niveau de l'association de modules dans un convertisseur statique. Les travaux dans ce domaine ne sont pas nouveaux, puisque de nombreux problèmes nuisant à l'association série ou parallèle ont été rencontrés dans le passé. Le but de cette thèse n'est pas de redécouvrir ces problèmes, ni leurs solutions, mais plutôt, par une étude systématique de la' commutati
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El, Khadiry Abdelilah. "Architectures de cellules de commutation monolithiques intégrables sur semi-conducteurs "bi-puce" et "mono-puce" pour convertisseurs de puissance compacts." Phd thesis, Université Paul Sabatier - Toulouse III, 2014. http://tel.archives-ouvertes.fr/tel-01020587.

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Dans le domaine de l'intégration hybride de puissance, l'opération de câblage des dispositifs semi-conducteurs de puissance est la cause de fortes interactions électriques parasites entre les inductances de connexion, les capacités parasites par rapport au plan de masse, les dispositifs de puissance eux même et leur électronique de commande rapprochée. Ces interactions constituent une source de pollution et d'auto-perturbation EMI d'une part et un facteur de limitation des performances et de la fiabilité d'autre part. La voie de l'intégration monolithique de puissance au sein d'un même cristal
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El, Khadiry Abdelilah. "Architectures de cellules de commutation monolithiques intégrables sur semi-conducteurs bi-puce et mono-puce pour convertisseurs de puissance compacts." Phd thesis, Toulouse 3, 2014. http://thesesups.ups-tlse.fr/2298/.

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Dans le domaine de l'intégration hybride de puissance, l'opération de câblage des dispositifs semi-conducteurs de puissance est la cause de fortes interactions électriques parasites entre les inductances de connexion, les capacités parasites par rapport au plan de masse, les dispositifs de puissance eux même et leur électronique de commande rapprochée. Ces interactions constituent une source de pollution et d'auto-perturbation EMI d'une part et un facteur de limitation des performances et de la fiabilité d'autre part. La voie de l'intégration monolithique de puissance au sein d'un même cristal
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Książki na temat "IGBT Diode"

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(Firm), Harris Semiconductor. MCT/IGBTs/diodes. Harris Semiconductor, 1994.

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(Firm), Harris Semiconductor. MCT/IGBT/diodes for commercial applications. Harris Semiconductor, 1995.

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Control strategies for balancing ofseries and parallel connected IGBT/diode modules. Hartung-Gorre, 2004.

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Części książek na temat "IGBT Diode"

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Gachovska, Tanya K., Jerry L. Hudgins, Enrico Santi, Angus Bryant, and Patrick R. Palmer. "Modeling of a Power Diode and IGBT." In Modeling Bipolar Power Semiconductor Devices. Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-031-02498-6_3.

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Klein, Peter W., Bin Du, Jerry L. Hudgins, and Enrico Santi. "Realization of Power IGBT and Diode Thermal Model." In Transient Electro-Thermal Modeling on Power Semiconductor Devices. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-031-02506-8_3.

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Tournier, Dominique, Peter Waind, Phillippe Godignon, L. Coulbeck, José Millán, and Roger Bassett. "4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1163.

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Rauf, S. Bobby. "DC Circuit Analysis, Diodes, and Transistors – BJT, MOSFET, and IGBT." In Electrical Engineering Fundamentals. CRC Press, 2020. http://dx.doi.org/10.1201/9780429355233-2.

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Kong, Moufu. "New Electronic Devices for Power Converters." In Power Electronics, Radio Frequency and Microwave Engineering [Working Title]. IntechOpen, 2023. http://dx.doi.org/10.5772/intechopen.108467.

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Power electronic devices are crucial components of power converter systems. The evolution of power devices drives the development of power converters, including improvements in performance, reliability, and power capacity. In this chapter, the author expounds the structure, working principle, and static and dynamic characteristics of the conventional PN junction diode. And the silicon carbide (SiC) Schottky barrier diode (SBD), junction barrier Schottky (JBS) diode, trench JBS (T-JBS) diode, and sidewall-enhanced trench JBS (SET-JBS) diode are also discussed and compared. Also, the structures
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Rajkamal, M. D., T. Mothilal, M. Shanmugapriya, and M. Saravanan. "Failure Rate Examination for Liability Tree-Based Analysis for Clamped Double Subsystem With DC Short Voltage Protective Functionality." In Advances in Computer and Electrical Engineering. IGI Global, 2024. http://dx.doi.org/10.4018/979-8-3693-3735-6.ch018.

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This study presents a comprehensive failure rate examination for implantable antennas, employing a liability tree-based analysis focused on a clamped double subsystem (CDSM) equipped with DC short voltage protective functionality. The enhanced protective feature of the CDSM aims to improve the security and safety of implantable antennas used in critical applications. However, this subsystem's design necessitates the use of additional IGBTs, diodes, and capacitors compared to standard configurations, consequently increasing the complexity and potential failure rate. Given that demanding convert
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Streszczenia konferencji na temat "IGBT Diode"

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He, Chun, PengJu Sun, and Chenhao Tang. "Junction Temperature Measurement of Freewheeling Diode in IGBT Module Based on Emitter Parasitic Inductance Voltage Undershoot." In 2025 IEEE 16th International Symposium on Power Electronics for Distributed Generation Systems (PEDG). IEEE, 2025. https://doi.org/10.1109/pedg62294.2025.11060245.

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Lee, JaeWook, B. K. Song, Tony Kwon, DaeWoong Chung, and JongUk Lee. "New Intelligent Power Module with 7th generation IGBTs and diodes for motor drive applications." In IECON 2024 - 50th Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2024. https://doi.org/10.1109/iecon55916.2024.10905121.

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Parker-Allotey, Nii-Adotei, Olayiwola Alatise, Dean Hamilton, et al. "Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair." In 2011 2nd IEEE PES International Conference and Exhibition on "Innovative Smart Grid Technologies" (ISGT Europe). IEEE, 2011. http://dx.doi.org/10.1109/isgteurope.2011.6162688.

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Zhang, Feng, Xu Yang, Wei Xue, Ruiliang Xie, Yang Li, and Yilin Sha. "A fast IGBT model considering the dynamic performance of both IGBT and antiparallel diode." In 2018 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2018. http://dx.doi.org/10.1109/apec.2018.8341022.

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De, Ankan, Adam Morgan, Subhashish Bhattacharya, and Douglas C. Hopkins. "Design Considerations of Packaging a High Voltage Current Switch." In ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/ipack2015-48714.

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In this paper an attempt has been made to demonstrate various package design considerations to accommodate series connection of high voltage Si-IGBT (6500V/25A die) and SiC-Diode (6500V/25A die). The effects of connecting the cathode of the series diode to the collector of the IGBT versus connecting the emitter of the IGBT to the anode of the series diode has been analyzed in regards to gate terminal operation and the parasitic line inductance of the structure. ANSYS Q3D/MAXWELL software have been used to analyze and extract parasitic inductance and capacitances in the package along with elect
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Bauer, J. G., T. Duetemeyer, E. Falck, C. Schaeffer, G. Schmidt, and H. Schulze. "Investigations on 6.5kV Trench IGBT and adapted EmCon Diode." In 19th International Symposium on Power Semiconductor Devices and IC's. IEEE, 2007. http://dx.doi.org/10.1109/ispsd.2007.4294918.

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Han, Chang-Woo, You-Lim Moon, Seung-Boong Jeong, and Jong-Hee Han. "A Study on the Thermo-Fluid Simulation Model Using Porous Media in the Power Conversion System." In ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/ipack2015-48085.

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When converting an electric power by an insulated-gate bipolar transistor (IGBT) module, the problem which is the heat generation in the IGBT module should be prudently considered in the design process. As an engineer reviews the cooling performance of power semi-conductor devices only at the component level, it is difficult to predict the reduction of airflow rates in the heat sink when power semi-conductor devices including the heat sink are integrated into the power conversion system. As the porous media model is adopted in the IGBT stack of the PCS, the problem that the meshes are heavily
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Mirzaee, Hesam, Ankan De, Awneesh Tripathi, and Subhashish Bhattacharya. "Design comparison of high power medium-voltage converters based on 6.5kV Si-IGBT/Si-PiN diode, 6.5kV Si-IGBT/SiC-JBS diode, and 10kV SiC MOSFET/SiC-JBS diode." In 2011 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2011. http://dx.doi.org/10.1109/ecce.2011.6064090.

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Puqi Ning, Jinlei Meng, and Xuhui Wen. "Finite Differential Method based Diode and IGBT model in PSPICE." In 2014 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific). IEEE, 2014. http://dx.doi.org/10.1109/itec-ap.2014.6940938.

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Cassimere, B., S. D. Sudhoff, D. C. Aliprantis, and M. D. Swinney. "IGBT and PN junction diode loss modeling for system simulations." In International Electric Machines and Drives Conference. IEEE, 2005. http://dx.doi.org/10.1109/iemdc.2005.195835.

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