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Gotowe bibliografie tematyczne / Memory device

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Gotowa bibliografia na temat „Memory device”

Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 25 lipca 2025

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Artykuły w czasopismach na temat "Memory device"

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Poduval, Karthik. "Virtual Memory to Memory Scaler Hardware Device Using QEMU." International Journal of Science and Research (IJSR) 11, no. 8 (2022): 1507–9. http://dx.doi.org/10.21275/sr24506180220.

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Jha, Rashmi, Vamshi Kiran Kiran Gogi, and Siddharth Barve. "(Invited) Novel Neuromorphic Computing Paradigms Enabled By Emerging Memory Devices." ECS Meeting Abstracts MA2024-01, no. 57 (2024): 3011. http://dx.doi.org/10.1149/ma2024-01573011mtgabs.

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Implementation of Artificial Intelligence and Machine Learning algorithms on conventional Von Neumann computing architectures are crippled by the memory-wall bottleneck. To overcome these issues, novel computing architectures with high-bandwidth memories, in-memory computing, and near-memory computing capabilities are being developed. Almost all of these architectures will benefit from high-density on-chip non-volatile memories, offered by the emerging non-volatile memory devices. Additionally, emerging memory devices offer rich device physics that can be leveraged for the implementation of no

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Kim, Dongshin, Ik-Jyae Kim, and Jang-Sik Lee. "Memory Devices for Flexible and Neuromorphic Device Applications." Advanced Intelligent Systems 3, no. 5 (2021): 2000206. http://dx.doi.org/10.1002/aisy.202000206.

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Kim, Byeongjeong, Chandreswar Mahata, Hojeong Ryu, Muhammad Ismail, Byung-Do Yang, and Sungjun Kim. "Alloyed High-k-Based Resistive Switching Memory in Contact Hole Structures." Coatings 11, no. 4 (2021): 451. http://dx.doi.org/10.3390/coatings11040451.

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Resistive random-access memory (RRAM) devices are noticeable next generation memory devices. However, only few studies have been conducted regarding RRAM devices made of alloy. In this paper, we investigate the resistive switching behaviors of an Au/Ti/HfTiOx/p-Si memory device. The bipolar switching is characterized depending on compliance current under DC sweep mode. Good retention in the low-resistance state and high-resistance state is attained for nonvolatile memory and long-term memory in a synapse device. For practical switching operation, the pulse transient characteristics are studied

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Novosad, V., Y. Otani, A. Ohsawa, et al. "Novel magnetostrictive memory device." Journal of Applied Physics 87, no. 9 (2000): 6400–6402. http://dx.doi.org/10.1063/1.372719.

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Tatematsu, Take. "4464750 Semiconductor memory device." Microelectronics Reliability 25, no. 2 (1985): 401. http://dx.doi.org/10.1016/0026-2714(85)90179-9.

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Jin, Risheng, Keli Shi, Beibei Qiu, and Shihua Huang. "Photoinduced-reset and multilevel storage transistor memories based on antimony-doped tin oxide nanoparticles floating gate." Nanotechnology 33, no. 2 (2021): 025201. http://dx.doi.org/10.1088/1361-6528/ac2dc5.

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Abstract Recently, antimony-doped tin oxide nanoparticles (ATO NPs) have been widely used in the fields of electronics, photonics, photovoltaics, sensing, and other fields because of their good conductivity, easy synthesis, excellent chemical stability, high mechanical strength, good dispersion and low cost. Herein, for the first time, a novel nonvolatile transistor memory device is fabricated using ATO NPs as charge trapping sites to enhance the memory performance. The resulting organic nano-floating gate memory (NFGM) device exhibits outstanding memory properties, including tremendous memory

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Ha, Yejin, Hyungsoon Shin, Wookyung Sun, and Jisun Park. "Circuit Optimization Method to Reduce Disturbances in Poly-Si 1T-DRAM." Micromachines 12, no. 10 (2021): 1209. http://dx.doi.org/10.3390/mi12101209.

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A capacitorless one-transistor dynamic random-access memory device (1T-DRAM) is proposed to resolve the scaling problem in conventional one-transistor one-capacitor random-access memory (1T-1C-DRAM). Most studies on 1T-DRAM focus on device-level operation to replace 1T-1C-DRAM. To utilize 1T-DRAM as a memory device, we must understand its circuit-level operation, in addition to its device-level operation. Therefore, we studied the memory performance depending on device location in an array circuit and the circuit configuration by using the 1T-DRAM structure reported in the literature. The simu

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Wang, Lu, Yukai Zhang, Peng Zhang, and Dianzhong Wen. "Physically Transient, Flexible, and Resistive Random Access Memory Based on Silver Ions and Egg Albumen Composites." Nanomaterials 12, no. 17 (2022): 3061. http://dx.doi.org/10.3390/nano12173061.

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Organic-resistance random access memory has high application potential in the field of next-generation green nonvolatile memory. Because of their biocompatibility and environmental friendliness, natural biomaterials are suitable for the fabrication of biodegradable and physically transient resistive switching memory devices. A flexible memory device with physically transient properties was fabricated with silver ions and egg albumen composites as active layers, which exhibited characteristics of write-once-read-many-times (WORM), and the incorporation of silver ions improved the ON/OFF current

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Yu, Zhiqiang, Xu Han, Jiamin Xu, et al. "The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO2/FTO Memory Device." Sensors 23, no. 7 (2023): 3480. http://dx.doi.org/10.3390/s23073480.

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In this paper, the effect of nitrogen annealing on the resistive switching characteristics of the rutile TiO2 nanowire-based W/TiO2/FTO memory device is analyzed. The W/TiO2/FTO memory device exhibits a nonvolatile bipolar resistive switching behavior with a high resistance ratio (RHRS/RLRS) of about two orders of magnitude. The conduction behaviors of the W/TiO2/FTO memory device are attributed to the Ohmic conduction mechanism and the Schottky emission in the low resistance state and the high resistance state, respectively. Furthermore, the RHRS/RLRS of the W/TiO2/FTO memory device is obviou

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Rozprawy doktorskie na temat "Memory device"

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Yao, Atsushi. "Logic and memory devices of nonlinear microelectromechanical resonator." 京都大学 (Kyoto University), 2015. http://hdl.handle.net/2433/199314.

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Johnson, Nigel Christopher. "All-optical regenerative memory using a single device." Thesis, Aston University, 2009. http://publications.aston.ac.uk/15331/.

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In recent years the optical domain has been traditionally reserved for node-to-node transmission with the processing and switching achieved entirely in the electrical domain. However, with the constantly increasing demand for bandwidth and the resultant increase in transmission speeds, there is a very real fear that current electronic technology as used for processing will not be able to cope with future demands. Fuelled by this requirement for faster processing speeds, considerable research is currently being carried out into the potential of All-optical processing. One of the fundamental obs

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Feng, Tao Atwater Harry Albert. "Silicon nanocrystal charging dynamics and memory device applications /." Diss., Pasadena, Calif. : Caltech, 2006. http://resolver.caltech.edu/CaltechETD:etd-06052006-141803.

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Panayi, Christiana. "Memory-assisted measurement-device-independent quantum key distribution systems." Thesis, University of Leeds, 2016. http://etheses.whiterose.ac.uk/12449/.

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Quantum key distribution (QKD) is one of the most prominent methods for secure exchange of cryptographic keys between two users. The laws of physics provide it with an immense tool towards secure communications. Although QKD has been proven to reach distances on the order of a few hundreds of kilometers, the transmission rate of the key significantly drops when we go to further distances. One possible solution to this is to build a network of trusted nodes. The trust requirement will however narrow its scope of deployability. In this thesis, we focus on improving the key rate performance of se

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El, Hassan Nemat Hassan Ahmed. "Development of phase change memory cell electrical circuit model for non-volatile multistate memory device." Thesis, University of Nottingham, 2017. http://eprints.nottingham.ac.uk/39646/.

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Phase change memory (PCM) is an emerging non-volatile memory technology that demonstrates promising performance characteristics. The presented research aims to study the feasibility of using resistive non-volatile PCM in embedded memory applications, and in bridging the performance gap in traditional memory hierarchy between volatile and non-volatile memories. The research studies the operation dynamics of PCM, including its electrical, thermal and physical properties; in order to determine its behaviour. A PCM cell circuit model is designed and simulated with the aid of SPICE tools (LTSPICE I

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八尾, 惇. "非線形微小電気機械共振器を用いたロジック及びメモリデバイス". Kyoto University, 2015. http://hdl.handle.net/2433/199521.

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Nominanda, Helinda. "Amorphous silicon thin film transistor as nonvolatile device." Texas A&M University, 2008. http://hdl.handle.net/1969.1/86004.

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n-channel and p-channel amorphous-silicon thin-film transistors (a-Si:H TFTs) with copper electrodes prepared by a novel plasma etching process have been fabricated and studied. Their characteristics are similar to those of TFTs with molybdenum electrodes. The reliability was examined by extended high-temperature annealing and gate-bias stress. High-performance CMOS-type a-Si:H TFTs can be fabricated with this plasma etching method. Electrical characteristics of a-Si:H TFTs after Co-60 irradiation and at different experimental stages have been measured. The gamma-ray irradiation damaged bulk f

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Lytvynenko, Ia M. "Magnetic tunnel junctions as a storage element for memory device." Thesis, Сумський державний університет, 2014. http://essuir.sumdu.edu.ua/handle/123456789/35037.

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Spin-dependent tunneling in magnetic tunnel junctions (MTJs) has recently aroused great research interest and has developed into a separate branch of materials science. The large tunneling magnetoresistance (TMR) observed in MTJs got much attention due to possible applications in non-volatile random access memories and next generation sensors of magnetic field. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35037

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Najib, Mehran. "Toward Analysis of a Cooling Device using Shape Memory Alloys." University of Toledo / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1481300993095304.

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Lenz, Thomas [Verfasser]. "Device physics and nanostructuring of organic ferroelectric memory diodes / Thomas Lenz." Mainz : Universitätsbibliothek Mainz, 2017. http://d-nb.info/1135748624/34.

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Książki na temat "Memory device"

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Tekin, Sumru. Memory device. [publisher not identified], 2012.

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Field, Lewis. Nonvolatile memory devices. Business Communications Co., 1999.

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Gan, Chong Leong,, and Chen-Yu, Huang. Interconnect Reliability in Advanced Memory Device Packaging. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-26708-6.

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Shuichi, Miyazaki, Fu Yong Qing, and Huang Wei Min, eds. Thin film shape memory alloys: Fundamentals and device applications. Cambridge University Press, 2009.

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Shuichi, Miyazaki, Fu Yong Qing, and Huang Wei Min, eds. Thin film shape memory alloys: Fundamentals and device applications. Cambridge University Press, 2009.

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Jaglall, Susan. Categorical organization as a device for facilitating memory recall. Laurentian University, Department of Psychology, 1993.

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Shuichi, Miyazaki, Fu Yong Qing, and Huang Wei Min, eds. Thin film shape memory alloys: Fundamentals and device applications. Cambridge University Press, 2009.

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Dace, Andrea. The flash memory market. Electronic Trend Publications, 1993.

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Weissman, Steven B. The impact of technology on the optical disk memory market. Communications Pub. Group, 1986.

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Stansberry, Mark. Computer memory: Important trends and directions. Business Communications Co., 2002.

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Części książek na temat "Memory device"

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Javadova, Mirfatma, and Ilona Chernytska. "Matrix Memory Device." In Lecture Notes in Civil Engineering. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-85043-2_17.

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Foerster, Michael, O. Boulle, S. Esefelder, R. Mattheis, and Mathias Kläui. "Domain Wall Memory Device." In Handbook of Spintronics. Springer Netherlands, 2016. http://dx.doi.org/10.1007/978-94-007-6892-5_48.

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Foerster, Michael, O. Boulle, S. Esefelder, R. Mattheis, and Mathias Kläui. "Domain Wall Memory Device." In Handbook of Spintronics. Springer Netherlands, 2015. http://dx.doi.org/10.1007/978-94-007-7604-3_48-1.

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Pellizzer, Fabio. "Phase-Change Memory Device Architecture." In Phase Change Memory. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-69053-7_9.

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Sousa, Véronique, and Gabriele Navarro. "Material Engineering for PCM Device Optimization." In Phase Change Memory. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-69053-7_7.

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Ielmini, Daniele. "Phase Change Memory Device Modeling." In Phase Change Materials. Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-84874-7_14.

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Gan, Chong Leong,, and Chen-Yu, Huang. "Advanced Memory and Device Packaging." In Springer Series in Reliability Engineering. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-26708-6_1.

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Nakazato, K. "Single Electron Memory Device Simulations." In Simulation of Semiconductor Processes and Devices 1998. Springer Vienna, 1998. http://dx.doi.org/10.1007/978-3-7091-6827-1_51.

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Yu, Shimeng. "RRAM Device Fabrication and Performances." In Resistive Random Access Memory (RRAM). Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-031-02030-8_2.

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Huang, Peng, Bin Gao, and Jinfeng Kang. "RRAM Device Characterizations and Modelling." In Emerging Non-volatile Memory Technologies. Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-6912-8_11.

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Streszczenia konferencji na temat "Memory device"

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Zhu, Meng-Jiao, Yun-He Dong, Li-Tian Xu, Xue-Qing Ma, Li Zeng, and Guang-zhao Yuan. "Polysilicon trench etch in memory device." In 2025 Conference of Science and Technology of Integrated Circuits (CSTIC). IEEE, 2025. https://doi.org/10.1109/cstic64481.2025.11017897.

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Li, Changlong, Liang Shi, and Chun Jason Xue. "MobileSwap: Cross-Device Memory Swapping for Mobile Devices." In 2021 58th ACM/IEEE Design Automation Conference (DAC). IEEE, 2021. http://dx.doi.org/10.1109/dac18074.2021.9586108.

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Murao, N., M. Iwasaki, and S. Ohtaki. "Tilt Servo using a Liquid Crystal Device." In Symposium on Optical Memory. Optica Publishing Group, 1996. http://dx.doi.org/10.1364/isom.1996.ofa.4.

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Adaptive optics systems have been studied extensively in recent years. In this field a phase shift modulator is used and it was found to be useful for the image enhancement, beam shaping, image processing, etc.1) 2)

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Ni, Kai, Yi Xiao, Shan Deng, and Vijaykrishnan Narayanan. "Computational Associative Memory Powered by Ferroelectric Memory." In 2023 Device Research Conference (DRC). IEEE, 2023. http://dx.doi.org/10.1109/drc58590.2023.10187048.

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"Memory devices." In 2009 67th Annual Device Research Conference (DRC). IEEE, 2009. http://dx.doi.org/10.1109/drc.2009.5354863.

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Bates, A. Keith, J. Kevin Erwin, Lifeng Li, and James J. Burke. "Output Beam Quality of Variable Groove Depth Grating Waveguide Couplers." In Symposium on Optical Memory. Optica Publishing Group, 1996. http://dx.doi.org/10.1364/isom.1996.otha.2.

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Integrated optics technology offers the potential to reduce the size and cost of optical disk read/write heads. Fig. 1 shows how integrated optics technology can be used to generate short wavelength laser light in waveguides using second harmonic generation techniques. Most integrated optical devices depend on optical waveguides to transport laser light between the individual optical components comprising the integrated optical device. For practical use, a method to efficiently couple laser light into and out of the waveguide is necessary to interface the integrated optical device to an extern

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"Memory." In 2010 68th Annual Device Research Conference (DRC). IEEE, 2010. http://dx.doi.org/10.1109/drc.2010.5551974.

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Wu, Yi, Shimeng Yu, H. S. Philip Wong, et al. "AlOx-Based Resistive Switching Device with Gradual Resistance Modulation for Neuromorphic Device Application." In 2012 4th IEEE International Memory Workshop (IMW). IEEE, 2012. http://dx.doi.org/10.1109/imw.2012.6213663.

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Buckley, J., T. Pro, R. Barattin, et al. "From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices." In 2009 IEEE International Memory Workshop (IMW). IEEE, 2009. http://dx.doi.org/10.1109/imw.2009.5090591.

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Subrahmanyan, Pradeep, Wonjae Lee, Jeff Lischer, et al. "Overlay Control in HAR device integration." In 2023 IEEE International Memory Workshop (IMW). IEEE, 2023. http://dx.doi.org/10.1109/imw56887.2023.10145953.

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Raporty organizacyjne na temat "Memory device"

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Cerjan, C., and B. P. Law. Magnetic Random Access Memory (MRAM) Device Development. Office of Scientific and Technical Information (OSTI), 2000. http://dx.doi.org/10.2172/15006522.

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Chang, Chia-Ching. Biomaterial-based Memory Device Development by Conducting Metallic DNA. Defense Technical Information Center, 2013. http://dx.doi.org/10.21236/ada584806.

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Tipton, Charles. Tektronix Curve Tracer Modification: Mass Storage Conversion to USB Memory Device. DEVCOM Army Research Laboratory, 2021. http://dx.doi.org/10.21236/ad1149323.

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Mayas, Magda. Creating with timbre. Norges Musikkhøgskole, 2018. http://dx.doi.org/10.22501/nmh-ar.686088.

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Unfolding processes of timbre and memory in improvisational piano performance This exposition is an introduction to my research and practice as a pianist, in which I unfold processes of timbre and memory in improvised music from a performer’s perspective. Timbre is often understood as a purely sonic perceptual phenomenon. However, this is not in accordance with a site-specific improvisational practice with changing spatial circumstances impacting the listening experience, nor does it take into account the agency of the instrument and objects used or the performer’s movements and gestures. In m

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Devine, Roderick A. Radiation Sensitivity of Unique Memory Devices. Defense Technical Information Center, 2002. http://dx.doi.org/10.21236/ada405716.

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Missert, Nancy A., and Robert Garcia. Magnetic Nitride Films for Superconducting Memory Devices. Office of Scientific and Technical Information (OSTI), 2014. http://dx.doi.org/10.2172/1531333.

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Hamblen, David, Joseph Cosgrove, Konstantin K. Likharev, Elena Cimpoiasu, and Sergey Tolpygo. Crested Tunnel Barriers for Fast, High Density, Nonvolatile Memory Devices. Defense Technical Information Center, 2002. http://dx.doi.org/10.21236/ada408876.

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Kim, Ki Wook. Novel Non-Volatile Memory Devices Based on Magnetic Semiconductor Nanostructures for Terabit Integration. Defense Technical Information Center, 2010. http://dx.doi.org/10.21236/ada519064.

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Richter, Schachar E. Construction and Operation of Three-Dimensional Memory and Logic Molecular Devices and Circuits. Defense Technical Information Center, 2013. http://dx.doi.org/10.21236/ada587368.

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Long, Cong, XUke Han, Yunjiao Yang, Tongyi Li, Qian Zhou, and Qiu Chen. Efficacy of Intranasal Insulin in Improving Cognition in Mild Cognitive Impairment or Dementia: A Systematic Review and Meta-analysis. INPLASY - International Platform of Registered Systematic Review and Meta-analysis Protocols, 2022. http://dx.doi.org/10.37766/inplasy2022.8.0054.

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Review question / Objective: How does the efficacy of Intranasal Insulin in improving Cognition in Mild Cognitive Impairment or Dementia. Condition being studied: Insulin regulates many aspects of brain function related to mild cognitive impairment (MCI) or dementia, which can be delivered to the brain center via intranasal (IN) devices. Some small, single-site studies indicated that intranasal insulin can enhance memory in patients with MCI or dementia. The pathophysiology of Alzheimer disease (AD) and diabetes mellitus (DM) overlap, making insulin an attractive therapy for people suffering f

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