Gotowa bibliografia na temat „Nanoelectronic”

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Artykuły w czasopismach na temat "Nanoelectronic"

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He, Qianxi. "Characteristics and Improvement Methods of Carbon Nanodevices." Highlights in Science, Engineering and Technology 106 (July 16, 2024): 94–100. http://dx.doi.org/10.54097/8s3ra054.

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Whether the trend of increasing integration density of integrated circuits indicated by Moore's Law can continue to develop, especially now that feature sizes have entered the nanometer range, shrinking sizes face greater challenges. Since entering the "post-Moore" era, the development of carbon-based nanoelectronics has attracted attention. This paper explores the application of carbon-based nanomaterials in carbon-based nanoelectronic devices and integrated circuits. It introduces the structure, properties, and preparation methods of single-walled carbon nanotubes and graphene, demonstrating
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Mishra, Manoj, and Shil Ja. "Germanium Nanowires (GeNW): Synthesis, Structural Properties, and Electrical Characterization for Advanced Nanoelectronic Devices." Migration Letters 20, S13 (2023): 236–45. http://dx.doi.org/10.59670/ml.v20is13.6289.

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The exponential progress of nanoelectronic devices necessitates the development of novel materials and production methodologies to fulfill the escalating demands for enhanced performance. This research aims to answer the current need for high-performance materials by proposing a revolutionary approach known as Germanium Nanowires for Advanced Nanoelectronic Devices (GeNW-ANED). GeNW-ANED achieves the integration of GeNW growth with advanced nanoelectronic applications. The system has several distinctive attributes, such as meticulous regulation of nanowire fabrication, adjustable electrical ch
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S, Anusankari, and Rajabrundha A. "MODELING, VERIFICATION AND TESTING TECHNIQUES IN NANOELECTRONICS INSTRUMENTATION FOR ENHANCED PRECISION AND RELIABILITY." ICTACT Journal on Microelectronics 10, no. 3 (2024): 1854–61. https://doi.org/10.21917/ijme.2024.0319.

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In the field of nanoelectronics, achieving high precision and reliability is critical for advancing technologies in diverse applications, such as sensors, biomedical devices, and quantum computing. Nanoelectronics instrumentation faces unique challenges due to the scaling of devices to nanometer dimensions, which results in increased susceptibility to noise, variability, and failure. Traditional verification and testing methods often fall short in ensuring the precision and reliability required at such scales. To address these challenges, advanced modeling, verification, and testing techniques
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HULL, ROBERT, RICHARD MARTEL, and J. M. XU. "NANOELECTRONICS: SOME CURRENT ASPECTS AND PROSPECTS." International Journal of High Speed Electronics and Systems 12, no. 02 (2002): 353–64. http://dx.doi.org/10.1142/s0129156402001174.

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A brief summary is provided of selected current activities in the field of nanoelectronics, which is taken here to mean the fabrication and integration of active microelectronic components with feature dimensions of tens of nanometers or less. Particular emphasis is placed upon the classes of nanoelectronic devices that were discussed at the 2002 WOFE Conference.
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Snider, G., P. Kuekes, T. Hogg, and R. Stanley Williams. "Nanoelectronic architectures." Applied Physics A 80, no. 6 (2005): 1183–95. http://dx.doi.org/10.1007/s00339-004-3154-4.

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Csurgay, Árpád I., and Wolfgang Porod. "Nanoelectronic Circuits." International Journal of Circuit Theory and Applications 38, no. 9 (2010): 881–82. http://dx.doi.org/10.1002/cta.727.

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Melnyk, Oleksandr, and Viktoriia Kozarevych. "SIMULATION OF PROGRAMMABLE SINGLE-ELECTRON NANOCIRCUITS." Bulletin of the National Technical University "KhPI". Series: Mathematical modeling in engineering and technologies, no. 1 (March 5, 2021): 64–68. http://dx.doi.org/10.20998/2222-0631.2020.01.05.

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The speed and specializations of large-scale integrated circuits always contradict their versatility, which expands their range and causes the rise in price of electronic devices. It is possible to eliminate the contradictions between universality and specialization by developing programmable nanoelectronic devices, the algorithms of which are changed at the request of computer hardware developers, i.e. by creating arithmetic circuits with programmable characteristics. The development of issues of theory and practice of the majority principle is now an urgent problem, since the nanoelectronic
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Sha, Junjiang, Chong Xu, and Ke Xu. "Progress of Research on the Application of Nanoelectronic Smelling in the Field of Food." Micromachines 13, no. 5 (2022): 789. http://dx.doi.org/10.3390/mi13050789.

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In the past 20 years, the development of an artificial olfactory system has made great progress and improvements. In recent years, as a new type of sensor, nanoelectronic smelling has been widely used in the food and drug industry because of its advantages of accurate sensitivity and good selectivity. This paper reviews the latest applications and progress of nanoelectronic smelling in animal-, plant-, and microbial-based foods. This includes an analysis of the status of nanoelectronic smelling in animal-based foods, an analysis of its harmful composition in plant-based foods, and an analysis
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Wang, Yanfeng, Haoping Ji, and Junwei Sun. "Design and Control for Four-Variable Chaotic Nanoelectronic Circuits Based on DNA Reaction Networks." Journal of Nanoelectronics and Optoelectronics 16, no. 8 (2021): 1248–62. http://dx.doi.org/10.1166/jno.2021.3062.

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Control of chaotic nanoelectronic circuit is a typical nonlinear problem. In this paper, we present a four-variable chaotic oscillatory nanoelectronic circuit by the cascade of multiplication, adjustment and elimination DNA chemical reaction modules. Furthermore, a proportional integral (PI) controller of four-variable nonlinear chaotic nanoelectronic circuit is realized based on catalysis and annihilation DNA chemical reaction modules. These DNA modules are realized by a series of DNA strand displacement (DSD) reactions and simulated by Visual DSD. Oscillatory time domain waveforms of four-va
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Sangwan, Vinod K., and Mark C. Hersam. "Neuromorphic nanoelectronic materials." Nature Nanotechnology 15, no. 7 (2020): 517–28. http://dx.doi.org/10.1038/s41565-020-0647-z.

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Rozprawy doktorskie na temat "Nanoelectronic"

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Rao, Wenjing. "Towards reliable nanoelectronic systems." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2008. http://wwwlib.umi.com/cr/ucsd/fullcit?p3291919.

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Thesis (Ph. D.)--University of California, San Diego, 2008.<br>Title from first page of PDF file (viewed March 18, 2008). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references (p. 193-199).
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Chiu, Pit Ho Patrio 1977. "Bismuth based nanoelectronic devices." Thesis, McGill University, 2005. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=100337.

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Bismuth (Bi) is a unique electronic material with small effective mass (&sim;0.001me) and long carrier mean free path (100 nm at 300K). It is particularly suitable for studying nano scale related phenomena such as size effect and energy level spacing. In this thesis work, bismuth based nanoelectronic devices were studied. Devices were fabricated using a combination of electron beam (e-beam) writing and thermal evaporation techniques. Dimensions of the fabricated devices were in the order of 100 rim. All structures were optimized for individual electrical characterization. Three types of device
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Blackburn, A. M. "Multiple-gate vacuum nanoelectronic devices." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.596691.

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This thesis introduces novel multiple-gate vacuum nanoelectronic devices, presenting details of their theoretical and experimental characterization, and of the methods that have been established for their fabrication. These devices, based upon the nanotriode of Driskill-Smith et al, have multiple-gates placed within an anode-cathode vacuum gap of only a few hundred nanometres, permitting a wide range of potential-energy landscapes to be created in front of its tungsten-nanopillar field-emitting cathode. The current transport in such devices is suggested to be influenced by quantum interference
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Maassen, Jesse. "First principles simulations of nanoelectronic devices." Thesis, McGill University, 2012. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=106463.

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As the miniaturization of devices begins to reveal the atomic nature of materials, where chemical bonding and quantum effects are important, one must resort to a parameter-free theory for predictions. This thesis theoretically investigates the quantum transport properties of nanoelectronic devices using atomistic first principles. Our theoretical formalism employs density functional theory (DFT) in combination with Keldysh nonequilibrium Green's functions (NEGF). Self-consistently solving the DFT Hamiltonian with the NEGF charge density provides a way to simulate nonequilibrium systems without
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Huang, Jun, and 黃俊. "Efficiency enhancement for nanoelectronic transport simulations." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2013. http://hdl.handle.net/10722/196031.

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Continual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling. It has also been utilized to build novel devices, such as the band-to-band tunneling field-effect transistors (FETs). Therefore, it presages accurate quantum transport simulations, which not only allow quantitative understanding of the device performances but also provide physical insight and guidelines for device optimizati
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Mirza, Muhammad M. "Nanofabrication of silicon nanowires and nanoelectronic transistors." Thesis, University of Glasgow, 2015. http://theses.gla.ac.uk/6495/.

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This project developed a robust and reliable process to pattern < 5 nm features in negative tone Hydrogen silsesquioxane (HSQ) resist using high resolution electron beam lithography and developed a low damage reactive ion etch (RIE) process to fabricate silicon nanowires on degenerately doped n-type silicon-on-insulator (SOI) substrates. A process to thermally grow high quality silicon dioxide (SiO2) (between 5-15 nm) is also developed to passivate onto the etched silicon nanowire devices to serve the purposes of gate dielectric and a diffusion barrier to minimize the donor deactivation. The m
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Coker, Ayodeji. "Performance analysis of fault-tolerant nanoelectronic memories." [College Station, Tex. : Texas A&M University, 2008. http://hdl.handle.net/1969.1/ETD-TAMU-2666.

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Sarsby, Matt. "Nanoelectronic and nanomechanical devices for low temperature applications." Thesis, Lancaster University, 2017. http://eprints.lancs.ac.uk/84447/.

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Cooling physical experiments to low temperatures removes thermal excitations to reveal quantum mechanical phenomena. The progression of nanotechnologies provides new and exciting research opportunities to probe nature at ever smaller length scales. The coupling of nanotechnologies and low temperature techniques has potential for scientific discoveries as well as real world applications. This work demonstrates techniques to further extend physical experimental research into the millikelvin-nanoscale domain. The challenge of thermometry becomes an increasingly complex problem as the temperature
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Jiang, Zhe. "Novel nanowire structures and devices for nanoelectronic bioprobes." Thesis, Harvard University, 2015. http://nrs.harvard.edu/urn-3:HUL.InstRepos:17467307.

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Semiconductor nanowire materials and devices provide unique opportunities in the frontier between nanoelectronics and biology. The bottom-up paradigm enables flexible synthesis and patterning of nanoscale building blocks with novel structures and properties, and nano-to-micro fabrication methods allow the advantages of functional nanowire elements to interface with biological systems in new ways. In this thesis, I will focus on the development of bottom-up nanoscience platforms, which includes rational synthesis and assembly of semiconductor nanowires with new capabilities, as well as design a
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Kim, Jungyup. "Effective germanium surface preparation methods for nanoelectronic applications /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

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Książki na temat "Nanoelectronic"

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Madkour, Loutfy H. Nanoelectronic Materials. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-21621-4.

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Jha, Niraj K., and Deming Chen, eds. Nanoelectronic Circuit Design. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-7609-3.

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Chen, An, James Hutchby, Victor Zhirnov, and George Bourianoff, eds. Emerging Nanoelectronic Devices. John Wiley & Sons Ltd, 2014. http://dx.doi.org/10.1002/9781118958254.

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Evtukh, Anatoliy, Hans Hartnagel, Oktay Yilmazoglu, Hidenori Mimura, and Dimitris Pavlidis. Vacuum Nanoelectronic Devices. John Wiley & Sons, Ltd, 2015. http://dx.doi.org/10.1002/9781119037989.

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Jha, Niraj K., and Deming Chen. Nanoelectronic circuit design. Springer, 2011.

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Jha, Niraj K., and Deming Chen. Nanoelectronic circuit design. Springer, 2011.

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Sarkar, Angsuman, and Arpan Deyasi. Low-Dimensional Nanoelectronic Devices. Apple Academic Press, 2022. http://dx.doi.org/10.1201/9781003277378.

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Labbé, Christophe, Subhananda Chakrabarti, Gargi Raina, and B. Bindu, eds. Nanoelectronic Materials and Devices. Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7191-1.

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ter Maten, E. Jan W., Hans-Georg Brachtendorf, Roland Pulch, Wim Schoenmaker, and Herbert De Gersem, eds. Nanoelectronic Coupled Problems Solutions. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-30726-4.

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Joodaki, Mojtaba. Selected Advances in Nanoelectronic Devices. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-31350-9.

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Części książek na temat "Nanoelectronic"

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Raushan, Mohd Adil, Naushad Alam, and Mohd Jawaid Siddiqui. "Emerging Nanoelectronic Devices." In Nanoelectronic Devices for Hardware and Software Security. CRC Press, 2021. http://dx.doi.org/10.1201/9781003126645-1.

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Fossum, J. G. "Teaching Nanoelectronic Devices." In Microelectronics Education. Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2651-5_20.

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Oates, Anthony S., and K. P. Cheung. "Reliability of Nanoelectronic Devices." In Nanoelectronics. Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527800728.ch13.

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Hutchby, James. "The Nanoelectronics Roadmap." In Emerging Nanoelectronic Devices. John Wiley & Sons Ltd, 2014. http://dx.doi.org/10.1002/9781118958254.ch01.

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Chen, An, James Hutchby, Victor V. Zhirnov, and George Bourianoff. "Outlook for Nanoelectronic Devices." In Emerging Nanoelectronic Devices. John Wiley & Sons Ltd, 2014. http://dx.doi.org/10.1002/9781118958254.ch26.

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Stanisavljevic, Milos, Alexandre Schmid, and Yusuf Leblebici. "Reliability of Nanoelectronic VLSI." In Advanced Circuits for Emerging Technologies. John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118181508.ch18.

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Kelly, M. J. "Manufacturability and Nanoelectronic Performance." In Future Trends in Microelectronics. John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118678107.ch10.

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Chen, Deming, and Niraj K. Jha. "Introduction to Nanotechnology." In Nanoelectronic Circuit Design. Springer New York, 2010. http://dx.doi.org/10.1007/978-1-4419-7609-3_1.

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Mohanram, Kartik, and Xuebei Yang. "Graphene Transistors and Circuits." In Nanoelectronic Circuit Design. Springer New York, 2010. http://dx.doi.org/10.1007/978-1-4419-7609-3_10.

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Koo, Kyung-Hoae, and Krishna C. Saraswat. "Study of Performances of Low-k Cu, CNTs, and Optical Interconnects." In Nanoelectronic Circuit Design. Springer New York, 2010. http://dx.doi.org/10.1007/978-1-4419-7609-3_11.

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Streszczenia konferencji na temat "Nanoelectronic"

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Skorek, Adam W., Anna Gryko-Nikitin, and Joanicjusz Nazarko. "Genetic Algorithm for Nanoscale Electro-Thermal Optimization." In ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ipack2007-33827.

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In this paper, we are presenting a genetic algorithm adopted for electro-thermal optimization in nanoelectronics devices and systems. The model of nanoelectronic system is simplified. Each heat source will be approximated by a specific function. The presented optimization strategy is designated for any system containing a number N of nanoelectronic elements. Optimization for the overall structure of the system will be performed in conformity with the temperature minimization criteria in the chosen areas of the system. Regarding others non unexpected modifications of the optimization algorithm,
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"Nanoelectronic Devices II." In 2006 64th Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/drc.2006.305076.

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"Session: Nanoelectronic devices." In 2014 IEEE 29th International Conference on Microelectronics (MIEL). IEEE, 2014. http://dx.doi.org/10.1109/miel.2014.6842093.

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Hagouel, P. I., and I. G. Karafyllidis. "Nanoelectronic graphene devices." In 2017 IEEE 30th International Conference on Microelectronics (MIEL). IEEE, 2017. http://dx.doi.org/10.1109/miel.2017.8190069.

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Yilmazoglu, O. "THz technology with nanoelectronic and vacuum nanoelectronic devices, a tutorial." In 2017 30th International Vacuum Nanoelectronics Conference (IVNC). IEEE, 2017. http://dx.doi.org/10.1109/ivnc.2017.8051529.

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Takaura, Norikatsu, and Dirk Wouters. "Solid-State and Nanoelectronic Devices - Phase Change Memory and New Approaches for Nanoelectronics." In 2007 IEEE International Electron Devices Meeting. IEEE, 2007. http://dx.doi.org/10.1109/iedm.2007.4418929.

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Wang, George T., Keshab R. Sapkota, Barbara A. Kazanowska, et al. "GaN vacuum nanoelectronic devices." In Low-Dimensional Materials and Devices 2020, edited by Nobuhiko P. Kobayashi, A. Alec Talin, Albert V. Davydov, and M. Saif Islam. SPIE, 2020. http://dx.doi.org/10.1117/12.2570577.

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NOVIK, E. G., I. V. SHEREMET, S. S. IVASHKEVICH, and I. I. ABRAMOV. "NANOELECTRONIC DEVICE SIMULATOR NANODEV." In Reviews and Short Notes to Nanomeeting '97. WORLD SCIENTIFIC, 1997. http://dx.doi.org/10.1142/9789814503938_0069.

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Wang, George T., Keshab R. Sapkota, A. Alec T. Talin, Francois Leonard, Gyorgy Vizkelethy, and Brendan P. Gunning. "GaN vacuum nanoelectronic devices." In Low-Dimensional Materials and Devices 2022, edited by Nobuhiko P. Kobayashi, A. Alec Talin, Albert V. Davydov, and M. Saif Islam. SPIE, 2022. http://dx.doi.org/10.1117/12.2638041.

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Aldridge, J. S., Andrew N. Cleland, R. Knobel, D. R. Schmidt, and C. S. Yung. "Nanoelectronic and nanomechanical systems." In International Symposium on Microelectronics and MEMS, edited by Neil W. Bergmann, Derek Abbott, Alex Hariz, and Vijay K. Varadan. SPIE, 2001. http://dx.doi.org/10.1117/12.449143.

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Raporty organizacyjne na temat "Nanoelectronic"

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Liu, Jie, and Mark W. Grinstaff. DNA for the Assembly of Nanoelectronic Devices Biotechnology and Nanoelectronics. Defense Technical Information Center, 2005. http://dx.doi.org/10.21236/ada433496.

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Peatman, William C. Nanoelectronic Modeling Software Development. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada340531.

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Rodriguez, Rene, Joshua Pak, Andrew Holland, et al. Incorporation of Novel Nanostructured Materials into Solar Cells and Nanoelectronic Devices. Office of Scientific and Technical Information (OSTI), 2011. http://dx.doi.org/10.2172/1029119.

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Brinker, C. Jeffrey, Darren Robert Dunphy, Carlee E. Ashley, et al. Cell-directed assembly on an integrated nanoelectronic/nanophotonic device for probing cellular responses on the nanoscale. Office of Scientific and Technical Information (OSTI), 2006. http://dx.doi.org/10.2172/883480.

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Ham, Donhee, Xiaofeng Li, and William Andress. Nanoelectronic Initiative - GHz & THz Amplifier and Oscillator Circuits With ID Nanoscale Devices for Multispectral Heterodyning Detector Arrays. Defense Technical Information Center, 2009. http://dx.doi.org/10.21236/ada510610.

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Lawrence R. Sita. Ferrocene-Based Nanoelectronics. Office of Scientific and Technical Information (OSTI), 2006. http://dx.doi.org/10.2172/876179.

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Pan, Wei, Taisuke Ohta, Laura Butler Biedermann, et al. Enabling graphene nanoelectronics. Office of Scientific and Technical Information (OSTI), 2011. http://dx.doi.org/10.2172/1029775.

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Kiv, A., V. Soloviev, and Yu Shunin. Economic problems of nanoelectronics. Брама-Україна, 2014. http://dx.doi.org/10.31812/0564/1281.

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Knight, Stephen, Joaquin V. Martinez de Pinillos, and Michele Buckley. Semiconductor microelectronics and nanoelectronics programs. National Institute of Standards and Technology, 2003. http://dx.doi.org/10.6028/nist.ir.7010.

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Knight, Stephen, Joaquin V. Martinez de Pinillos, and Michele Buckley. Semiconductor microelectronics and nanoelectronics programs. National Institute of Standards and Technology, 2004. http://dx.doi.org/10.6028/nist.ir.7121.

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