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Rozprawy doktorskie na temat „Photodiodes Gap”

Autor: Grafiati

Data publikacji: 3 czerwca 2025

Data aktualizacji: 31 lipca 2025

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1

Bouthinon, Benjamin. "Impact des états de gap sur les performances des photodiodes organiques." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENT072/document.

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Produites sur des substrats de grande dimension grâce aux technologies d'impression, les photodiodes organiques suscitent un intérêt grandissant pour leurs applications prometteuses dans le domaine de l'imagerie médicale, des interfaces hommes-machines et les grands instruments. Ces photodiodes (dont les performances tendent à concurrencer celles en silicium amorphe), présentent de nombreux avantages : simplicité du procédé d'impression, faible coût d'investissement, souplesse du substrat et propriétés d'absorption remarquables des polymères. Toutefois, les performances de ces photodiodes rest

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Lienhard, Pierre. "Caractérisation et modélisation du vieillissement des photodiodes organiques." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAY072/document.

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Les récents travaux sur l’intégration de polymères organiques dans des composants électroniques ont permis de développer des photodiodes rapides et sensibles, fabriquées sur des substrats souples et de grande surface. Cependant, la stabilité pose un problème majeur pour l’industrialisation de ces composants et contraint à l’utilisation d’une encapsulation coûteuse. Au cours de leur utilisation, les photodiodes sont soumises à de nombreux stress pouvant réduire leur durée de vie: la lumière (UV-visible), l’oxygène, la vapeur d’eau, la température, ou des stress électriques et mécaniques liés à

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NICHETTI, CAMILLA. "Development of avalanche photodiodes with engineered band gap based upon III-V semiconductors." Doctoral thesis, Università degli Studi di Trieste, 2021. http://hdl.handle.net/11368/2982139.

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This thesis is striving in the development and performance assessment of GaAs/AlGaAs avalanche photodiodes (APDs) with separated absorption and multiplication regions, which complement existing silicon detectors providing higher efficiency for X-ray detection. During the course of this thesis several APDs were fabricated utilizing molecular beam epitaxy and lithography and subsequently have been thoroughly characterized. This thesis is subdivided into six chapters. It sets in with a general description of APD structures and their functionalities prescinding the advantages of the developed APDs

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Gluszak, Edward A. "Laser beam induced current studies of Hg1-xCdxTe photodiodes." Thesis, Edith Cowan University, Research Online, Perth, Western Australia, 2006. https://ro.ecu.edu.au/theses/353.

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Laser-beam-induced-current (LBIC) is being investigated as a combined electro-optical (EO) alternative to individual electrical and optical based measurements of p-n junction photodiodes. The technique is non-destructive and employs a focused low-power laser beam that is scanned across the semiconductor surface, between two shorted ohmic contacts located at remote positions on either side of the scanned area. The LBIC image is then a two-dimensional map of the steady-state current-flow as a function of laser position. However, despite its simplicity, its application has thus far been limited t

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5

Zhang, Yun. "Fabrication and characterization of GaN visible-blind ultraviolet avalanche photodiodes." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29604.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Shen, Shyh-Chiang; Committee Member: Doolittle, William A.; Committee Member: Dupuis, Russell Dean. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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Zhang, Yun. "Development of III-nitride bipolar devices: avalanche photodiodes, laser diodes, and double-heterojunction bipolar transistors." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42703.

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This dissertation describes the development of III-nitride (III-N) bipolar devices for optoelectronic and electronic applications. Research mainly involves device design, fabrication process development, and device characterization for Geiger-mode gallium nitride (GaN) deep-UV (DUV) p-i-n avalanche photodiodes (APDs), indium gallium nitride (InGaN)/GaN-based violet/blue laser diodes (LDs), and GaN/InGaN-based npn radio-frequency (RF) double-heterojunction bipolar transistors (DHBTs). All the epitaxial materials of these devices were grown in the Advanced Materials and Devices Group (AMDG) led

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7

Odendaal, Vicky. "On the Processing of InAsSb/GaSb photodiodes for infrared detection." Thesis, Nelson Mandela Metropolitan University, 2008. http://hdl.handle.net/10948/980.

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The objective of this dissertation is the development of the necessary processing steps needed to manufacture infrared photodiodes on InAs1-xSbx material. Preliminary surface preparation steps were performed on both InAs and InSb material, thus covering both possible extremes of the antimony mole fraction. The first experiments endeavoured to characterise the effect of several possible etchants with regards to etch rate, repeatability, limitations for photolithographic patterning and the resultant surface roughness. The etchants investigated include a lactic acid based etchant, a sulphuric aci

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8

Diale, Mmantsae Moche. "Schottky barrier diode fabrication on n-GaN for ultraviolet detection /." Access to E-Thesis, 2009. http://upetd.up.ac.za/thesis/available/etd-02112010-211125/.

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Tirino, Louis. "Transport Properties of Wide Band Gap Semiconductors." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/5210.

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Transport Properties of Wide Band Gap Semiconductors Louis Tirino III 155 pages Directed by Dr. Kevin F. Brennan The objective of this research has been the study of the transport properties and breakdown characteristics of wide band gap semiconductor materials and their implications on device performance. Though the wide band gap semiconductors have great potential for a host of device applications, many gaps remain in the collective understanding about their properties, frustrating the evaluation of devices made from these materials. The model chosen for this study is based on semicla

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10

Diale, M. (Mmantsae Moche). "Schottky barrier diode fabrication on n-GaN for altraviolet detection." Thesis, University of Pretoria, 2010. http://hdl.handle.net/2263/28143.

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There are many potential areas for the utilization of GaN-based nitride materials, including ultraviolet photodetectors. Ultraviolet photodetectors are used in the military for missile plume detection and space communications. Medically, ultraviolet photodiodes are used in monitoring skin cancer. Schottky barrier metal-semiconductor contacts are choice devices for the manufacture of ultraviolet photodiodes due to higher short wavelength sensitivity and fast response. They also require simple fabrication technology; suffer lower breakdown voltages, and record larger leakage currents at lower vo

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11

Zhou, Gan [Verfasser], Klaus [Akademischer Betreuer] Petermann, Klaus [Gutachter] Petermann, Martin [Gutachter] Schell, and Andreas [Gutachter] Stöhr. "Waveguide integrated MQW p-i-n photodiodes / Gan Zhou ; Gutachter: Klaus Petermann, Martin Schell, Andreas Stöhr ; Betreuer: Klaus Petermann." Berlin : Technische Universität Berlin, 2017. http://d-nb.info/115617886X/34.

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Sridharan, Sriraaman. "Design and theoretical study of Wurtzite GaN HEMTs and APDs via electrothermal Monte Carlo simulation." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/47526.

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A self-consistent, full-band, electrothermal ensemble Monte Carlo device simulation tool has been developed. It is used to study charge transport in bulk GaN, and to design, analyze, and improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) and avalanche photodiodes (APDs). Studies of electron transport in bulk GaN show that both peak electron velocity and saturated electron velocity are higher for transport in the basal plane than along the c-axis. Study of the transient electron velocity also shows a clear transit-time advantage for electron devices exploiting cha

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13

Beck, Ariane Laura 1979. "Wide band gap avalanche photodiodes for ultraviolet single photon detection." 2006. http://hdl.handle.net/2152/12995.

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ZHUO, XIN-CHENG, and 卓信誠. "Amorphous silicon/silicon carbide step-gap and staircase superlattice avalanche photodiodes and phototransistors." Thesis, 1989. http://ndltd.ncl.edu.tw/handle/53299555637160405478.

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15

Zeng, Ceng-Zun, and 曾昶尊. "Study of GaN UV pin Photodiodes and HEMTs." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/kd479f.

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碩士<br>國立清華大學<br>光電工程研究所<br>106<br>This experiment can be divided into two major parts, The first part is the development of GaN materials used in photodetectors,The second part is the application of gallium nitride materials in the development of high electron mobility transistors. In the photodetector section, two different matrix samples are used, The dry-etching technique was used to define the p-n interface and then Ti/Al and Ni/Au were deposited on the thermal evaporator, After rapid thermal annealing, an Ohmic contact is formed to complete the p-i-n diode. After the diodes are completed,

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Chieh, Chou-Tzu, and 周子傑. "Integrated GaN-based LED and monitoring photodiode." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/zv56t7.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>107<br>In this paper, a photodiode with integrated GaN LED and monitor illuminance is developed, and the basic photoelectric characteristics of the LED the basic photoelectric characteristics of the p-i-n photodetector, and the room temperature of the p-i-n photodiode are measured. The dark current and the photocurrent, responsivity, and light coupling rate produced by the pin photodetector at different distances from the LED. The p-i-n photodiode and the LED are at different distances and the LED current is increased from 0 mA to 2 mA. When the distance is 1000 μm,

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17

Huang, Chung-Yi, and 黃鐘億. "Comparison of Optoelectronic Characteristics of GaN-Based P-I-N Photodiodes with Low-Temperature-Grown GaN/AlN interlayer(s)." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/53938704751486489455.

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碩士<br>國立成功大學<br>光電科學與工程研究所<br>95<br>We aims at fabricating and characterizing of GaN-based p-i-n ultraviolet photodetectors in the thesis. We have designed two variations, including p-i-n structure with low-temperature (LT)-GaN and LT-AlN interlayer(s) at middle of the absorption layer. In the p-i-n structure with LT-GaN interlayer(s), it was found that the responsivity of the photodiode with LT-GaN interlayer can be enhanced at a small electric field due to the carrier multiplication effect. The carrier multiplication effect take place by the electrons collision with the carriers trapped i

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18

Chiou, Yu-Zung, and 邱裕中. "THE STUDIES OF GaN METAL-SEMICONDUCTOR INTERFACE AND ITS APPLICATION IN METAL-SEMICONDUCTOR-METAL PHOTODIODES." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/40853987497856365581.

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碩士<br>國立成功大學<br>電機工程學系<br>87<br>GaN films were grown on the (0001) sapphire substrates by MOCVD using a horizontal reactor. The low-temperature GaN buffer layer, 250 A in thickness, was grown at 560℃. The high-temperature GaN films were grown at 1050℃. XRD observations indicated that the films are well oriented hexagonal GaN. But SEM observations showed that there were many micro-cracks and defects in the films. The films showed PL emission of λ≒358 nm. FWHM of the PL is 1nm. Many important device, such as metal-semiconductor-metal (MSM) Photodiode, metal-semiconductor fi

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19

Wu, Cheng-You, and 吳政佑. "Fabrication and comparison of GaN-based p-i-n photodiode and reverse biased LED." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/aq5r57.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>105<br>In this paper, the use of commercial gallium nitride light emitting diode wafers, wafer number ELV (violet light) and FEB (Blue light), in these two wafers to produce a p-i-n photo detector and light emitting diode (LED). The difference between the two devices is mainly the range of the p-type ohmic contact metal ITO area. ITO has the function of spreading or collecting current, but the high absorption rate at short wavelength (violet and ultraviolet light). Therefore, we will discuss the comparison of the basic photoelectric characteristics, external quantum

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20

Tien, Ching-Ho, and 田青禾. "Optoelectronic properties of ZnO-based film and its application on photodiodes and GaN-based light-emitting diodes." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/88wc9n.

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博士<br>國立臺北科技大學<br>光電工程系研究所<br>100<br>ZnO-based films (ZnO and MnZnO) were deposited by solution chemical vapor deposition (SCVD) and its application photodiodes and GaN-based light-emitting diodes (LEDs), respectively. This study discusses the effects of magneto-optical multiplication, spin-polarized injection and photo-ionization. This study divided into three parts to be explored. Firstly, this study discusses the optoelectronic properties of ZnO and MnZnO films with and without in the presence of a magnetic field. This study also examines the magneto-optical effect of ZnO-based films.

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