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Artykuły w czasopismach na temat „Photodiodes Gap”

Autor: Grafiati

Data publikacji: 3 czerwca 2025

Data aktualizacji: 31 lipca 2025

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1

Sun, Yanning, Aristo Yulius, Guohua Li, and Jerry M. Woodall. "Drift dominated InP/GaP photodiodes." Solid-State Electronics 48, no. 10-11 (2004): 1975–79. http://dx.doi.org/10.1016/j.sse.2004.05.043.

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Gumenjuk-Sichevskaya, J. V., and F. F. Sizov. "Currents in narrow-gap photodiodes." Semiconductor Science and Technology 14, no. 12 (1999): 1124–31. http://dx.doi.org/10.1088/0268-1242/14/12/320.

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McIntosh, Dion, Qiugui Zhou, Yaojia Chen, and Joe C. Campbell. "High quantum efficiency GaP avalanche photodiodes." Optics Express 19, no. 20 (2011): 19607. http://dx.doi.org/10.1364/oe.19.019607.

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Carras, M., J. L. Reverchon, G. Marre, et al. "Interface band gap engineering in InAsSb photodiodes." Applied Physics Letters 87, no. 10 (2005): 102103. http://dx.doi.org/10.1063/1.2041818.

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Pikhtin, A. N., S. A. Tarasov, and B. Kloth. "Ag-GaP schottky photodiodes for UV sensors." IEEE Transactions on Electron Devices 50, no. 1 (2003): 215–17. http://dx.doi.org/10.1109/ted.2002.807247.

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Averin, S. V., P. I. Kuznetsov, V. A. Zhitov, et al. "Metal-semiconductor-metal photodiodes based on ZnCdS/GaP wide-gap heterostructures." Technical Physics 57, no. 11 (2012): 1514–18. http://dx.doi.org/10.1134/s1063784212110047.

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Vygranenko, Yu, A. Malik, M. Fernandes, R. Schwarz, and M. Vieira. "UV-Visible ITO/GaP Photodiodes: Characterization and Modeling." physica status solidi (a) 185, no. 1 (2001): 137–44. http://dx.doi.org/10.1002/1521-396x(200105)185:1<137::aid-pssa137>3.0.co;2-r.

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Dmytro, Faizullin, Hiraki Koju, team HORYU-IV, and Cho Mengu. "IMPROVEMENT OF SUN ANGLE ACCURACY FROM IN-ORBIT DATA OF A QUADRANT PHOTODIODE SUN SENSOR." INTERNATIONAL JOURNAL OF RESEARCH- GRANTHAALAYAH 5, no. 5 (2017): 54–67. https://doi.org/10.5281/zenodo.583886.

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The sun vector is commonly used for defining a satellite attitude and many types of sensors exist for its determination. A fine pinhole sun sensor type was chosen and designed for HORYU-IV nanosatellite of Kyushu Institute of Technology. This sensor has a round-shaped hole and uses commercial off-the-shelf silicon photodiode, which consists of four small sensitive elements arranged close to each other. This type of sensors commonly uses look-up tables for providing high accuracy, which requires a large amount of data to be saved. Polynomial methods for sun vector determination were considered

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9

Chianese, Giovanni, Pasquale Franciosa, Tianzhu Sun, Dariusz Ceglarek, and Stanislao Patalano. "Using photodiodes and supervised machine learning for automatic classification of weld defects in laser welding of thin foils copper-to-steel battery tabs." Journal of Laser Applications 34, no. 4 (2022): 042040. http://dx.doi.org/10.2351/7.0000800.

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This paper has been designed to study whether photodiodes and supervised machine learning (ML) algorithms are sufficient to automatically classify weld defects caused by simultaneous variation of the part-to-part gap and laser power during remote laser welding (RLW) of thin foils, with applications in battery tabs. Photodiodes are used as the primary source of data and are collected in real-time during RLW of copper-to-steel thin foils in the lap joint. Experiments are carried out by the nLight Compact 3 kW fiber laser integrated with the Scout-200 2D scanner. The paper reviews and compares se

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10

GASPARYAN, FERDINAND V. "UV p-i-n PHOTODIODES MADE ON WIDE BANDGAP SEMICONDUCTORS." Modern Physics Letters B 22, no. 05 (2008): 369–81. http://dx.doi.org/10.1142/s0217984908014870.

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In this paper, results of investigations on the static and dynamic characteristics, responsivity, internal noises, detectivity and noise equivalent power of the forward biased p-i-n photodiode made on wide band gap semiconductors operating in double injection regime are presented. Numerical simulations were made for 4H-SiC and GaN . It is shown that forward biased p-i-n photodiodes have high values of responsivity (~ 0.03 A/W for 4H-SiC and ~ 0.15 A/W for GaN ), detectivity (~1011 cm Hz 1/2 W-1 for 4H-SiC and ~ 8×1013 cm Hz 1/2 W-1 for GaN ) and low level of internal noises at room temperature

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11

Melebaev, D., М. Annaberdieva, М. Kotyrov, and А. Tashlieva. "OPTICAL PROPERTIES OF GALLIUM PHOSPHIDE AND SCHOTTKY PHOTODIODES BASED ON IT." National Association of Scientists 2, no. 65 (2021): 35–51. http://dx.doi.org/10.31618/nas.2413-5291.2021.2.65.393.

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In this paper, the optical and luminescent properties of gallium phosphide (GaP) and spectral characteristics of GaP p-n, m-s structures for studying the energy-band structure of GaP were considered. Based on literature data, the absorption coefficient dependence was constructed near and above the fundamental absorption edge of the photon energy hν=2-6 eV in GaP (300 K) to discuss the obtained experimental results. The results of the photosensitivity spectra study of Au-n-GaP, Au-p-GaP Schottky barriers are presented, which were produced by the chemical deposition of Au nanoscale (~15 nm

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12

Gradišnik, Vera, and Darko Gumbarević. "The Blue Light Defects Activation in A-Si:H Pin Photodiode as a Biosensor." Key Engineering Materials 843 (May 2020): 64–69. http://dx.doi.org/10.4028/www.scientific.net/kem.843.64.

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The microfluidic Lab-On-Chip (LOC) systems, based on the CMOS technology, today grow rapidly based on requirement of the Point-of-care-testing (POCT). It is a need for a high sensitive biotransducers, as a part of biosensors to be integrated on LOC system. To detect low-level of light emitted by an analyte, promising material and devices are a p-i-n a-Si:H photodiodes. The observed absorbance of blue light in human cells HeLa (cervical carcinoma) induct H2O2 in same cells and consequently, chemical reaction with NO, detected as chemiluminescence signal by the photodiode, as well as formation o

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13

Niedziela, Tadeusz. "Noncooled (Hg,Cd)Te IR photo detectors in range of 10.6 μm wavelength". AUTOBUSY – Technika, Eksploatacja, Systemy Transportowe 19, № 12 (2018): 795–801. http://dx.doi.org/10.24136/atest.2018.500.

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In range of 10.6 μm IR radiation an analysis of noncooled (T = 300 K) (PC) photodiodes and (EMCD) magnetoexlusion detectors with (Hg,Cd)Te was made. The basic detection parameters of these devices are limited by the noise resulting from statistical processes of thermal generation and carrier recombination. The parameter evaluation of related photodiodes demonstrates that the optimal parameters such as: thickness or structure doping on the substrate with a widened energy gap differs each other for structures with ohmic contacts at both ends. In the paper, for photodiodes and magnetoexclusion de

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14

Kim, Hyung-Sik, and Yong-Sik Lim. "Optical Autocorrelation Measurement for Ultrafast Pulses at NIR Wavelengths Using GaP, GaAsP, and Si Photoconductive Detectors." Applied Sciences 13, no. 12 (2023): 6957. http://dx.doi.org/10.3390/app13126957.

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In this article, we report on an optical real-time autocorrelator readout with a 5 Hz refresh rate, equipped with a transimpedance amplified photodetector based on the two-photon absorption (TPA) of semiconductor photodiodes (PDs) for ultrashort (1 < ps) pulse measurement. By replacing the GaP PD of a commercial TPA detector with GaAsP and Si PD elements, we demonstrated that the spectral response based on the TPA of each photodetector followed the linear response of the corresponding semiconductor PD within accessible wavelength regions. The TPA spectral response of the GaAsP detector exhi

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15

Demirbilek, Nihat, Fahrettin Yakuphanoğlu, and Mehmet Kaya. "Structural and optical properties of pure ZnO and Al/Cu co-doped ZnO semiconductor thin films and electrical characterization of photodiodes." Materials Testing 63, no. 3 (2021): 279–85. http://dx.doi.org/10.1515/mt-2020-0042.

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Abstract Nano-structured semiconductor thin films and p-type Si photodiodes were fabricated with the sol-gel spin coating technique using pure ZnO and co-doped ZnO:Alx:Cuy with x = 1 at.-%, y = 1, 2, 3, 5 at.-%. The structural and optical properties of thin films were examined using an XRD and a UV-spectrophotometer. The thin films have a hexagonal wurtzite crystal structure, and their optical band gap energies decrease with increasing Cu contribution. The electrical properties of photodiodes were assessed via I-V, C-V, (G/ω)-V and phototransient current (I-t, C-t) measurements. The Φ b(I-V),

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16

Vorsin, N. N., A. A. Gladyshchu, T. L. Kushner, N. P. Tarasiuk, S. V. Chugunov, and M. V. Borushko. "Modeling AlGaN p-i-n photodiodes." Doklady BGUIR 19, no. 8 (2022): 50–57. http://dx.doi.org/10.35596/1729-7648-2021-19-8-50-57.

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Ternary AlGaN alloys with a band gap of 3.4 to 6.2 eV are very promising for photodetectors in the UV wavelength range. Using the COMSOL MULTIPHYSICS software based on AlGaN, a p-i-n photodiode model was developed, including its I–V characteristic, spectral sensitivity of the received radiation, absorption coefficient as a function of the aluminum fraction and the depletion layer thickness. To calculate the process of interaction of a semiconductor with EM radiation, we used a model based on the use of an element of the transition matrix through the carrier lifetime during spontaneous recombin

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17

Dmytro, Faizullin, Hiraki Koju, team HORYU-IV, and Cho Mengu. "OPTIMIZATION OF A SUN VECTOR DETERMINATION FOR PINHOLE TYPE SUN SENSOR." International Journal of Research - Granthaalayah 5, no. 7 (2017): 436–49. https://doi.org/10.5281/zenodo.838573.

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The sun vector is commonly used for defining a satellite attitude and many types of sensors exist for its determination. An attitude determination system is designed for each satellite project based on missions’ requirements. A fine pinhole sun sensor type was chosen and designed for HORYU-IV nanosatellite of Kyushu Institute of Technology. This sensor has a round-shaped hole and uses commercial off-the-shelf silicon photodiode, which consists of four small sensitive elements arranged close to each other. This type of sensors commonly uses look-up tables for providing high accuracy, which requ

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18

McIntosh, Dion, Qiugui Zhou, Francisco J. Lara, James Landers, and Joe C. Campbell. "Fluorescence Detection 400–480 nm Using Microfluidic System Integrated GaP Photodiodes." Advances in OptoElectronics 2011 (October 20, 2011): 1–4. http://dx.doi.org/10.1155/2011/491609.

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Ciprofloxacin is a commonly used antibiotic and the active ingredient in a veterinary antibiotic. Detecting its presence allows us to understand its absorption process in blood as well as tissue. A portable microfluidic system has been fabricated. It operates at low bias voltage and shows a linear relationship between concentration levels and system response. Detection of concentrations down to 1 ppb of ciprofloxacin in microliters of solution was achieved.

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19

Wisetlakhorn, Pakhawat, Supachok Thainoi, and Choompol Antarasena. "Study on Spectral Response of GaAlAs/GaAs Staircase Band Gap Photodiodes." Japanese Journal of Applied Physics 43, no. 11A (2004): 7460–61. http://dx.doi.org/10.1143/jjap.43.7460.

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20

Kunitsyna, E. V., I. A. Andreev, V. V. Sherstnev, et al. "Narrow gap III–V materials for infrared photodiodes and thermophotovoltaic cells." Optical Materials 32, no. 12 (2010): 1573–77. http://dx.doi.org/10.1016/j.optmat.2010.06.010.

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Войцеховский, А. В., С. Н. Несмелов, С. М. Дзядух та ін. "Влияние имплантации ионов As-=SUP=-+-=/SUP=- и последующего отжига на электрические свойства приповерхностных слоев варизонных пленок n-Hg-=SUB=-0.78-=/SUB=-Cd-=SUB=-0.22-=/SUB=-Te". Письма в журнал технической физики 47, № 4 (2021): 33. http://dx.doi.org/10.21883/pjtf.2021.04.50643.18605.

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Films of n-Hg0.775Cd0.225Te with near-surface wide-gap layers were grown by molecular beam epitaxy on Si (013) substrates. To measure the admittance, metal – insulator – semiconductor (MIS) structures were fabricated on the basis of the as-grown HgCdTe film, films after implantation, and films after implantation and annealing. Using techniques that take into account the presence of graded-gap layers and slow interface states, the main parameters of the near-surface layers of HgCdTe films have been determined after the technological procedures used to create photodiodes.

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Kim, Joo Hyoung, Francois Berghmans, Abu Bakar Siddik, et al. "A Thin-Film Pinned-Photodiode Imager Pixel with Fully Monolithic Fabrication and beyond 1Me- Full Well Capacity." Sensors 23, no. 21 (2023): 8803. http://dx.doi.org/10.3390/s23218803.

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Thin-film photodiodes (TFPD) monolithically integrated on the Si Read-Out Integrated Circuitry (ROIC) are promising imaging platforms when beyond-silicon optoelectronic properties are required. Although TFPD device performance has improved significantly, the pixel development has been limited in terms of noise characteristics compared to the Si-based image sensors. Here, a thin-film-based pinned photodiode (TF-PPD) structure is presented, showing reduced kTC noise and dark current, accompanied with a high conversion gain (CG). Indium-gallium-zinc oxide (IGZO) thin-film transistors and quantum

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Beeler, Richard T., James Gallagher, Chi Xu, et al. "Band Gap-Engineered Group-IV Optoelectronic Semiconductors, Photodiodes and Prototype Photovoltaic Devices." ECS Journal of Solid State Science and Technology 2, no. 9 (2013): Q172—Q177. http://dx.doi.org/10.1149/2.034309jss.

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Senaratne, C. L., P. M. Wallace, J. D. Gallagher, P. E. Sims, J. Kouvetakis, and J. Menéndez. "Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes." Journal of Applied Physics 120, no. 2 (2016): 025701. http://dx.doi.org/10.1063/1.4956439.

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Tetyorkin, V. V., A. V. Sukach, and A. I. Tkachuk. "Dark current and 1/f noise in forward biased InAs photodiodes." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 04 (2021): 466–71. http://dx.doi.org/10.15407/spqeo24.04.466.

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Dark current and low-frequency noise have been studied in forward biased InAs photodiodes within the temperature range 77…290 K. Photodiodes were fabricated by diffusion of Cd into n-InAs single crystal substrates. It has been shown that, at the temperatures >130 K, the forward current is defined by recombination of charge carriers with participation of deep states in the middle of band gap. At these temperatures, a correlation is found between forward current and 1/f noise. At lower temperatures, the forward current and noise have been analyzed within the model of inhomogeneous p-n junctio

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Cincotta, Stefanie, Adrian Neild, Kristian Helmerson, Michael Zenere, and Jean Armstrong. "Accurate Low Complexity Quadrature Angular Diversity Aperture Receiver for Visible Light Positioning." Sensors 24, no. 18 (2024): 6006. http://dx.doi.org/10.3390/s24186006.

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Despite the many potential applications of an accurate indoor positioning system (IPS), no universal, readily available system exists. Much of the IPS research to date has been based on the use of radio transmitters as positioning beacons. Visible light positioning (VLP) instead uses LED lights as beacons. Either cameras or photodiodes (PDs) can be used as VLP receivers, and position estimates are usually based on either the angle of arrival (AOA) or the strength of the received signal. Research on the use of AOA with photodiode receivers has so far been limited by the lack of a suitable compa

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Kasper, E., M. Oehme, T. Arguirov, J. Werner, M. Kittler, and J. Schulze. "Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes." Advances in OptoElectronics 2012 (February 28, 2012): 1–4. http://dx.doi.org/10.1155/2012/916275.

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Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV) and highly doped Ge (0.73 eV). Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity

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McIntosh, Dion, Qiugui Zhou, Francisco J. Lara, James Landers, and Joe C. Campbell. "Flip-Chip Bonded GaP Photodiodes for Detection of 400- to 480-nm Fluorescence." IEEE Photonics Technology Letters 23, no. 13 (2011): 878–80. http://dx.doi.org/10.1109/lpt.2011.2141979.

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Huang, Edward Kwei-wei, Darin Hoffman, Binh-Minh Nguyen, Pierre-Yves Delaunay, and Manijeh Razeghi. "Surface leakage reduction in narrow band gap type-II antimonide-based superlattice photodiodes." Applied Physics Letters 94, no. 5 (2009): 053506. http://dx.doi.org/10.1063/1.3078282.

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Mukhokosi, Emma P., Gollakota V. S. Manohar, Tadaaki Nagao, Saluru B. Krupanidhi, and Karuna K. Nanda. "Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe2 and MoS2: A Review." Micromachines 11, no. 8 (2020): 750. http://dx.doi.org/10.3390/mi11080750.

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While band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and intriguing properties such as a layer-dependent band gap and are envisaged as alternative materials to replace conventional silicon (Si) and indium gallium arsenide (InGaAs) infrared photodetectors. The most researched 2D material is graphene with a response time between 50 and 100 ps an

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Lei, Qiumei, Gaoqi Tian, Xiaoping Lei, et al. "Analysis of Electrical Characteristics of N-Doped TiO₂ and Si Heterojunction Diodes." Journal of Nanoelectronics and Optoelectronics 18, no. 4 (2023): 402–7. http://dx.doi.org/10.1166/jno.2023.3413.

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Heterojunction photodiodes play a crucial role in various industries and daily life. They find application in fields such as photoelectric detection, aerospace, and intelligent manufacturing. In this study, we employed a series of growth processes, including physical vapor deposition techniques such as magnetron sputtering, high-temperature annealing, and hydrothermal growth, to fabricate N-doped TiO2 heterojunction diode devices with Si as a substrate material. The surface of the device exhibited a columnar array structure with rutile phase TiO2. Additionally, the doping of N element led to t

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Lee, Gae Hwang, Moon Gyu Han, Dong-Seok Leem, et al. "Energy Gap between Photoluminescence and Electroluminescence as Recombination Indicator in Organic Small-Molecule Photodiodes." Journal of Physical Chemistry C 120, no. 19 (2016): 10176–84. http://dx.doi.org/10.1021/acs.jpcc.6b01876.

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Vest, R. E., and L. R. Canfield. "Evaluation of Au/GaAsP and Au/GaP Schottky photodiodes as radiometric detectors in the EUV." Review of Scientific Instruments 67, no. 9 (1996): 3362. http://dx.doi.org/10.1063/1.1147347.

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Kurt, Adnan, Bayram Gündüz, and Murat Koca. "A detailed study on the optical properties of 3-benzoyl-7-hydroxy coumarin compound in different solvents and concentrations." Macedonian Journal of Chemistry and Chemical Engineering 38, no. 2 (2019): 227. http://dx.doi.org/10.20450/mjcce.2019.1403.

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A coumarin-derived compound, 3-benzoyl-7-hydroxy coumarin (BHYC), is synthesized to determine its optoelectronic properties, including absorbance band edge, optical band gap, transmittance, refractive index, electrical susceptibility, volume-surface energy loss functions and optical/electrical conductance parameters. The absorbance spectra of BHYC in dimethylformamide (DMF) and dimethylsulfoxide (DMSO) solvents exhibit maximum peaks at 350 and 353 nm, respectively, in the near-ultraviolet region. The absorbance band edge values of BHYC in DMF and DMSO are 2.526 and 2.500 eV, respectively. The

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Batool, Zahida, Razieh Firouzihaji, Mariia Babiichuk, et al. "Atums Green Conjugated Polymer Heterojunction Films as Blue-Sensitive Photodiodes." Polymers 17, no. 13 (2025): 1770. https://doi.org/10.3390/polym17131770.

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Conjugated polymers (CPs) offer many attractive features for photodiodes and photovoltaics, including solution processability, ease of scale-up, light weight, low cost, and mechanical flexibility. CPs have a wide range of energy gaps; thus, the choice of the specific polymer determines the optimum operational wavelength range. However, there are relatively few CPs with a strong absorption in the blue region of the spectrum where the human eye is most sensitive (440 to 470 nm) and none with an energy gap at 2.75 eV (450 nm), which corresponds to the peak of the CIE-1931 z(λ) color-matching func

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Vasil’ev, V. V., D. G. Esaev, A. F. Kravchenko, V. M. Osadchii, and A. O. Suslyakov. "Study of the effect of graded gap epilayers on the performance of CdxHg1−x Te photodiodes." Semiconductors 34, no. 7 (2000): 844–47. http://dx.doi.org/10.1134/1.1188085.

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Kobe, Richard K., and Leah J. Hogarth. "Evaluation of irradiance metrics with respect to predicting sapling growth." Canadian Journal of Forest Research 37, no. 7 (2007): 1203–13. http://dx.doi.org/10.1139/x06-320.

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Accurate and efficient measurement of photosynthetically active radiation (PAR) is critical in ecological studies. We evaluated 25 metrics of PAR with respect to predicting growth of sugar maple ( Acer saccharum Marsh.) and white ash ( Fraxinus americana L.) saplings from understory to large gap conditions. PAR metrics were derived from gallium arsenide photodiodes, hemispherical canopy photographs (film and digital), and a LI-COR LAI-2000 plant canopy analyzer. In general, percent canopy openness, estimated with film photographs or LAI-2000, best predicted growth. Mean daily photosynthetic ph

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Kaci, Samira, Aissa Keffous, Mohamed Trari, Brahim Mahmoudi, and Hamid Menari. "Enhancement of Blue Spectral Response Intensity of PbS via Polyethylene Oxide-Adding for the Application to White LEDs." Advanced Materials Research 227 (April 2011): 39–42. http://dx.doi.org/10.4028/www.scientific.net/amr.227.39.

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In this work, we have employed chemical bath deposition (CBD) method to obtain nanocrystalline PbS thin films in the presence of polyethylene oxide (PEO). The spectral response of Au/PbS-pSi(100)/Al Schottky photodiodes at different PEO amount were studied. The response exhibits a combined effect of photogeneration in the heterojunction (HJ) Si side and PbS. Spectral response were observed progressively at shorter wavelength due to the surface absorption. The peak centered at 410 nm properly corresponds to photo-exited holes being injected from PbS to the Si substrate. The intensity of the pea

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Vurgaftman, I., E. H. Aifer, C. L. Canedy, et al. "Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes." Applied Physics Letters 89, no. 12 (2006): 121114. http://dx.doi.org/10.1063/1.2356697.

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BINDL, DOMINICK J., and MICHAEL S. ARNOLD. "SEMICONDUCTING CARBON NANOTUBE PHOTOVOLTAIC PHOTODETECTORS." International Journal of High Speed Electronics and Systems 20, no. 03 (2011): 687–95. http://dx.doi.org/10.1142/s0129156411006970.

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A photovoltaic photodetector harnessing near infrared band gap absorption by thin films of post-synthetically sorted semiconducting single walled carbon nanotubes ( s -SWCNTs) is described. Peak specific detectivity of 6×1011 Jones at -0.1 V bias at 1210 nm is achieved using a heterojunction device architecture: indium tin oxide/ ca. 5 nm s -SWCNT / 120 nm C60 / 10 nm 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) / Ag. The photodiodes are characterized by a series resistance of 2.9 Ω cm2 and a rectification ratio of 104 at ±1V. These results are expected to guide the exploration of new c

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Gan, Hongyi, Junwen Yu, and Xiangfu Wang. "Enhancing Linearity of Light Response in Avalanche Photodiodes by Suppressing Electrode Size Effect." Sensors 24, no. 11 (2024): 3366. http://dx.doi.org/10.3390/s24113366.

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The nonlinear characteristics of avalanche photodiodes (APDs) inhibit their performance in high-speed communication systems, thereby limiting their widespread application as optical detectors. Existing theoretical models have not fully elucidated complex phenomena encountered in actual device structures. In this study, actual APD structures exhibiting lower linearity than their ideal counterparts were revealed. Simulation analysis and physical inference based on GaN APDs reveal that electrode size is a noteworthy factor influencing response linearity. This discovery expands the nonlinear theor

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Madhusoodhanan, Syam, Abbas Sabbar, Sattar Al-Kabi, et al. "High-Temperature Optical Characterization of Wide Band Gap Light Emitting Diodes and Photodiodes for Future Power Module Application." Advances in Science, Technology and Engineering Systems Journal 4, no. 2 (2019): 17–22. http://dx.doi.org/10.25046/aj040203.

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Gaskill, D. Kurt, Jun Hu, X. Xin, et al. "Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes." Materials Science Forum 679-680 (March 2011): 551–54. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.551.

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The effects of proton irradiation on uv 4H-SiC single photon avalanche photodiodes (SPADs) are reported. The SPADs, grown by chemical vapor deposition, were designed for uv operation with dark count rates (DCR) of about 30 kHz and single photon detection efficiency (SPDE) of 4.89%. The SPADs were irradiated with 2 MeV protons to a fluence of 1012 cm-2. After irradiation, the I-V characteristics show forward voltage (<1.9 V) generation-recombination currents 2 to 3 times higher than before irradiation. Single photon counting measurements imply generation-recombination centers created in the

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Ge, Shunhao, Dandan Sang, Liangrui Zou, et al. "A Review on the Progress of Optoelectronic Devices Based on TiO2 Thin Films and Nanomaterials." Nanomaterials 13, no. 7 (2023): 1141. http://dx.doi.org/10.3390/nano13071141.

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Titanium dioxide (TiO2) is a kind of wide-bandgap semiconductor. Nano-TiO2 devices exhibit size-dependent and novel photoelectric performance due to their quantum limiting effect, high absorption coefficient, high surface-volume ratio, adjustable band gap, etc. Due to their excellent electronic performance, abundant presence, and high cost performance, they are widely used in various application fields such as memory, sensors, and photodiodes. This article provides an overview of the most recent developments in the application of nanostructured TiO2-based optoelectronic devices. Various comple

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Rahim, Barham K., Fahmi F. Muhammadsharif, Salah R. Saeed, and Kamal A. Ketuly. "A study on the optical properties and optoelectronic parameters of Sudan dye doped poly(5-hydroxy-L-tryptophane) and P(TER-CO-TRI) polymers." Modern Electronic Materials 8, no. 3 (2022): 85–96. http://dx.doi.org/10.3897/j.moem.8.3.91521.

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In this paper, the optical properties and optoelectronic parameters of two newly synthesized polymers forming a donor : acceptor (D : A) binary system are investigated, followed by their subsequent doping with Sudan dye to obtain a ternary system. The donor polymer is P(TER-CO-TRI), while the acceptor is poly(5-hydroxy-L-Tryptophane). A cost-effective solution-processing was carried out to obtain different binary and ternary composites with concentration of 0.5 mg/ml. Optical absorption spectroscopy was used to measure the optical response and optoelectronic parameters, while FTIR and cyclic v

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Rahim, Barham K., Fahmi F. Muhammadsharif, Salah R. Saeed, and Kamal A. Ketuly. "A study on the optical properties and optoelectronic parameters of Sudan dye doped poly(5-hydroxy-L-tryptophane) and P(TER-CO-TRI) polymers." Modern Electronic Materials 8, no. (3) (2022): 85–96. https://doi.org/10.3897/j.moem.8.3.91521.

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In this paper, the optical properties and optoelectronic parameters of two newly synthesized polymers forming a donor : acceptor (D : A) binary system are investigated, followed by their subsequent doping with Sudan dye to obtain a ternary system. The donor polymer is P(TER-CO-TRI), while the acceptor is poly(5-hydroxy-L-Tryptophane). A cost-effective solution-processing was carried out to obtain different binary and ternary composites with concentration of 0.5 mg/ml. Optical absorption spectroscopy was used to measure the optical response and optoelectronic parameters, while FTIR and cyclic v

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Kholodnov, V. A., and I. D. Burlakov. "To the Problem of Optimization of Parameters of a Double Heterostructure Based on Direct-Gap Semiconductors for Avalanche Photodiodes." Journal of Communications Technology and Electronics 63, no. 9 (2018): 1127–31. http://dx.doi.org/10.1134/s1064226918090103.

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Darbandi, A., and O. Rubel. "Impact ionization threshold energy of trigonal selenium: An ab initio study." Canadian Journal of Physics 91, no. 6 (2013): 483–85. http://dx.doi.org/10.1139/cjp-2012-0474.

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Impact ionization coefficient is a critical parameter that determines the multiplication gain in avalanche photodiodes. The impact ionization coefficient is closely related to the ionization threshold, Eth, which is determined by the band dispersion of the semiconducting material used in detectors. The ionization threshold energy is commonly calculated based on a parabolic band assumption, which provides only a crude approximation. Here we present a first principle study of the ionization threshold energy through an analysis of the electronic structure of trigonal selenium. It is shown that th

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Aftab, Sikandar, Ms Samiya, Hafiz Mansoor Ul Haq, et al. "Single nanoflake-based PtSe2 p–n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes." Journal of Materials Chemistry C 9, no. 1 (2021): 199–207. http://dx.doi.org/10.1039/d0tc04642f.

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Here, novel lateral PtSe<sub>2</sub> p–n junctions are fabricated based on the PtSe<sub>2</sub>/BN/graphene (Gr) van der Waals heterostructures upon the illumination of visible light via the optical excitation of the mid-gap point defects in hexagonal boron nitride (h-BN).

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Sciuto, Antonella, Fabrizio Roccaforte, Salvatore di Franco, et al. "4H-SiC Schottky Array Photodiodes for UV Imaging Application Based on the Pinch-off Surface Effect." Materials Science Forum 556-557 (September 2007): 945–48. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.945.

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The fabrication of high sensitive diodes array is very attractive for spectroscopic and astronomical UV imaging applications, particularly when visible light rejection is required. Wide band gap materials are excellent candidates for UV “visible blind” detection. In this paper, we demonstrate an array of Schottky UV-diodes on 4H-SiC with a single pixel area of about 1.44 mm2 and a total area of about 29 mm2. The Schottky photodiodes are based on the pinch-off surface effect, the front electrode being an interdigit Ni2Si contact that allows the direct light exposure of the optically active devi

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