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Artigos de revistas sobre o assunto "Grown crystal"

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Yeo, Im Gyu, Tae Woo Lee, Jong Hwi Park, et al. "Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method." Materials Science Forum 679-680 (March 2011): 44–47. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.44.

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The single crystal ingots by using a sublimation technique were grown on 6H-SiC dual-seed crystals with opposite face polarities and then SiC crystal wafers sliced from the SiC ingot were systematically investigated to find out the polarity dependence of the crystal quality. The growth rate of the SiC crystal grown in this study was about 0.2mm/hr. N-type 2’’ SiC crystals exhibiting the 4H- and 6H-SiC polytype were successfully fabricated on C-face and Si-face, respectively. The incorporation of nitrogen donors in the SiC crystals grown on the C-face seed crystal was exhibited to be higher tha
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Sreedevi, R., A. S. I. Joy Sinthiya, S. C. Vella Durai, T. Balu та P. Murugakoothan. "Структура, ріст та оптичні характеристики монокристалів сульфанілату гуанідинію (GSA)". Physics and Chemistry of Solid State 25, № 2 (2024): 278–83. http://dx.doi.org/10.15330/pcss.25.2.278-283.

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Guanidine Sulphanilate (GSA) single crystal was grown by slow evaporation growth method. Single crystal X-ray diffraction studies show that the crystal grows in a centro symmetric monoclinic system and its space group is P21/c. Optical studies were carried out using UV visible spectroscopy and the grown crystal shows the the lower cutoff wavelength of 220 nm. Photoluminescence studies show that GSA crystals have good luminescence properties. Laser damage threshold was found to be 0.24GW/cm2. Nonlinear optical studies show green light emission.
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Dinagaran, S., P. Srinivasan, P. Srinivasan, et al. "Growth and Characterization of Anthranilic acid Crystals." JOURNAL OF ADVANCES IN CHEMISTRY 12, no. 11 (2016): 4480–87. http://dx.doi.org/10.24297/jac.v12i11.823.

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ABSTRACTSingle crystals of Anthranilic acid (AA) have been successfully grown and purity of materials has been increased by repeated recrystallization process. Single crystals have been grown by slow evaporation technique. The grown crystal was characterized by Single crystal X-Ray diffraction, Powder XRD, FTIR, UV-Vis, DTA/TGA, Dielectric studies and SHG respectively. The observed results from various characterization show the suitability of NLO application. The second harmonic generation of the grown crystal was checked using Kurtz and Perry technique. Thermal stability and melting point of
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Bade, Sujata, Shuaki Hussaini, Yogesh Rasal, and Ravikiran Late. "Effect of Organic Entities on the Performance of Potassium Dihydrogen Phosphate (KDP) Crystals." Journal of Condensed Matter 1, no. 02 (2023): 100–104. http://dx.doi.org/10.61343/jcm.v1i02.32.

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The 0.5mol l-cystine and 2mol oxalic acid doped in potassium dihydrogen phosphate crystals have been developed by slow evaporation method at room temperature. The structural properties of the grown crystal were analyzed by powder X-ray diffraction technique. The functional groups of grown crystals were successfully identified using FTIR spectral analysis. The optical transparency of the grown crystals is examined in the range of 200-900 nm using UV-visible studies. The optical transmittance is found to be 87 % of the grown crystal. The energy band gap (Eg) of the grown crystal was calculated a
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Lee, Sang Il, Jung Young Jung, Mi Seon Park, et al. "SiC Single Crystal Growth on Dual Seed with Different Surface Properties." Materials Science Forum 740-742 (January 2013): 11–14. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.11.

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SiC crystal ingots were grown on 6H-SiC dual-seed crystal with different surface properties by a PVT (Physical Vapor Transport) technique. And then SiC crystal wafers sliced from the SiC ingots were systematically investigated in order to find out the dependence of surface properties for seed on the polytype formation. While n-type SiC crystals exhibiting the 4H polytype were grown on seed crystal having high root-mean-square (rms) value, 6H-SiC crystals were grown on seed having lower rms value. However, 6H polytype was maintained on on-axis and off-axis seeds during the entire growth period.
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Kusunoki, Kazuhiko, Kazuhito Kamei, Y. Ueda, et al. "Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary Solution." Materials Science Forum 483-485 (May 2005): 13–16. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.13.

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The growth of 6H-SiC crystal from Si-Ti-C ternary solution was conducted under the temperature gradient and the crystalline quality evaluations of the grown crystals were carried out. 6H-SiC(0001) on-axis pvt-grown crystal was used as a seed crystal. Micropipes in the seed crystal were terminated during the solution growth and 28mm􀊷28mm self-standing micropipe-free SiC crystals were obtained. The quality of the grown crystals was investigated by SIMS, high-resolution x-ray diffraction and molten KOH etching. The content of residual impurities in the SiC were very low. The X-ray 􀐢-rocking curve
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Sudhahar, S., M. Krishna Kumar, A. Silambarasan, R. Muralidharan, and R. Mohan Kumar. "Studies on Structural, Spectral, and Optical Properties of Organic Nonlinear Optical Single Crystal: 2-Amino-4,6-dimethylpyrimidinium p-Hydroxybenzoate." Journal of Materials 2013 (March 28, 2013): 1–7. http://dx.doi.org/10.1155/2013/539312.

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2-Amino-4,6-dimethylpyrimidinium p-hydroxybenzoate (ADPHB), a novel organic material, was synthesized, and crystals were grown by slow evaporation solution growth method. The cell parameters and crystalline perfection of the grown crystal were studied by single crystal and powder X-ray diffraction analyses. The presence of various functional groups of the grown crystal was confirmed using Fourier Transform infrared spectral analysis. UV-Visible spectrum shows that ADPHB crystals have high transmittance in the range 305–900 nm. The refractive index and transient photoluminescence properties of
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Seki, Kazuaki, Ryo Tanaka, Toru Ujihara, and Yoshikazu Takeda. "Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method." Materials Science Forum 615-617 (March 2009): 27–30. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.27.

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We investigated the effects of the solution growth process on the polytype and crystal quality of the crystals grown on (111) 3C-SiC seed crystals. In spite of the use of 3C-SiC seed crystals, the polytype of the grown crystal changed from 3C-SiC to 6H-SiC, because the stacking errors easily occur due to the similarity of the (111) face of 3C-SiC and the (0001) face of 6H-SiC. Moreover, the grown 6H-SiC crystal affected the crystal quality of the seed crystal, i.e., high-density stacking faults were induced in the seed crystal after the growth process.
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Gobinathan, L., and K. Boopathy. "Photoluminescence, laser damage threshold, optical transmittance, FTIR, mechanical, dielectric, thermal and XRD studies on Bis – Glycine hydrochloride single crystal." JOURNAL OF ADVANCES IN CHEMISTRY 12, no. 11 (2016): 4523–35. http://dx.doi.org/10.24297/jac.v12i11.825.

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Single crystals of Bis – glycine hydrochloride (BGHC) were grown from aqueous solution by means of slow evaporation and slow cooling techniques. Single crystal XRD study reveals that the grown BGHC crystallizes in orthorhombic system with space group P212121 and the obtained unit cell parameters are a = 5.32 Å, b = 8.10 Å and c = 18.01 Å. Powder X – ray diffraction pattern of grown BGHC has been indexed. Functional groups present in the BGHC crystals were identified by FT – IR spectral analysis. The transmission and absorption spectra for the grown BGHC crystal shows that the lower cut off wav
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Rajeswari, A., and P. Murugakoothan. "Growth and Characterization of Non-Linear Optical Single Crystal Guanidinium triscadmium Sulphate Octahydrate." Asian Journal of Chemistry 31, no. 3 (2019): 661–68. http://dx.doi.org/10.14233/ajchem.2019.21722.

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Semi-organic single crystals of guanidinium tris cadmium sulphate octahydrate (GuCdS) with nonlinear optical properties were successfully grown by slow solvent evaporation technique. The grown crystals were characterised by powder X -ray diffraction analysis to determine the unit cell parameters. The structure of the compound belongs to triclinic crystal system and space group is found to be P1. The grown crystals were subjected to FTIR spectroscopic analysis to confirm the presence of functional groups present in the compound. UV-vis-NIR spectral study suggested that the grown crystal is tra
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Teses / dissertações sobre o assunto "Grown crystal"

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Large, Alan Clifford. "Ion implanted and epitaxially grown crystal waveguide lasers." Thesis, University of Southampton, 1995. https://eprints.soton.ac.uk/394154/.

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This thesis reports the results of investigations into laser action in optical waveguides formed by the methods of helium ion implantation and liquid phase epitaxial growth. Helium ion implantation has been used to produce waveguides in a range of dielectric materials. Of these Nd:GGG and Yb:YAG have been operated as planar waveguide lasers. The most important part of the work on ion implantation has been the fabrication of channel waveguides using a gold stopping mask to prevent ion damage in certain regions. Using this method channel waveguide lasers have been produced in Nd:YAG, Nd:GGG and
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Schmidt, Christiane [Verfasser]. "Predicting the Crystal Morphology Grown from Aqueous Solution / Christiane Schmidt." Aachen : Shaker, 2012. http://d-nb.info/1066197407/34.

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Wong, Hok Ming. "Sub-band gap luminescence of ZnSe/GaAs heterojunction grown by hot wall epitaxy." HKBU Institutional Repository, 1996. http://repository.hkbu.edu.hk/etd_ra/61.

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4

Maier, Dirk. "Segregation effects in single-crystal fibers grown by the micro-pulling-down method." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2009. http://dx.doi.org/10.18452/15979.

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In dieser Arbeit wurden Segregationen, die bei der Z"uchtung einkristalliner Fasern von Oxidmischkristallsystemen mittels der Micro-Pulling-Down Methode auftreten, experimentell und theoretisch untersucht. Dazu wurden Fasern von hochschmelzenden Oxidmischkristallsystemen mit unterschiedlichen Gleichgewichtsverteilungskoeffizienten gezüchtet. Es wurde gezeigt, dass die Dotierstoffprofil von dem Gleichgewichtsverteilungskoeffizienten, der Ziehgeschwindigkeit, dem Sauerstoffpartialdruck der Züchtungsatmosphäre sowie der Meniskushöhe abhängt. Ein analytisches und ein numerisches Modell wurden
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Bacher, Fred R. "A study of GaAs, InP and InGaAs grown by organometallic vapor phase epitaxy /." Full text open access at:, 1987. http://content.ohsu.edu/u?/etd,139.

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Airaksinen, Veli-Matti. "Dopant incorporation, desorption and migration in MBE grown InP and Al←xGa←1←-←xAs/GaAs." Thesis, University of Glasgow, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.279931.

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Blumenthal, Sarah [Verfasser]. "MBE-grown cubic GaN QDs integrated into 2D photonic crystal membranes / Sarah Blumenthal." Paderborn : Universitätsbibliothek, 2019. http://d-nb.info/1182422381/34.

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Grigorieff, Peter Nikolaus. "Electron microscopy of interfaces and thin buried layers in the InGaAs/InP system grown by MOVPE." Thesis, University of Bristol, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386162.

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MacPherson, Glyn. "Distribution and control of misfit dislocations in indium gallium arsenide layers grown on gallium arsenide substrates." Thesis, University of Liverpool, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318239.

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Malowney, Josh. "Ordered Patterns of Functional Oxide Nanostructures Grown from Chemical Solutions." Doctoral thesis, Universitat Autònoma de Barcelona, 2012. http://hdl.handle.net/10803/108098.

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La generación de nanoestructuras de oxido por medio de impresión litográfica (NIL) y litografía por haz de electrones (EBL) se ha convertido en una estrategia más refinada durante los últimos años. Por medio de NIL hemos fabricado matrices de nanoagujeros y nanopuntos de La0.7Sr0.3MnO3 (LSMO), así como nanopuntos y nanohilos de LaxSr1-xOy por medio de EBL. Las nanoestructuras echas por NIL se han fabricado después de espinar una capa de precursor de oxido de metal encima de un substrato de cristal solo aislante. Después se ha hecho un estampado con un molde duro de silicona masculino,
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Livros sobre o assunto "Grown crystal"

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W, Palosz, and United States. National Aeronautics and Space Administration., eds. Characterization of cadmium-zinc telluride crystals grown by 'contactless' PVT using synchrotron white beam topography. Elsevier, 1997.

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2

Khatamian, D. Crystal structure of thin oxide films grown on Zr-Nb alloys studied by RHEED. Chalk River Laboratories, 1996.

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Khatamian, Djamshid. Crystal structure of thin oxide films grown on Zr-Nb alloys studied by RHEED. Reactor Materials Research Branch, Chalk River Laboratories, 1996.

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4

United States. National Aeronautics and Space Administration., ed. Enhancement of thickness uniformity of thin films grown by pulsed laser deposition. National Aeronautics and Space Administration, 1995.

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5

Bobela, David C. Epitaxial crystal silicon absorber layers and solar cells grown at 1.8 microns per minute: Preprint. National Renewable Energy Laboratory, 2011.

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6

Stangl, Jean. Crystals and crystal gardens you can grow. F. Watts, 1990.

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Stangl, Jean. Crystals and crystal gardens you can grow. F. Watts, 1990.

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B, Steiner, and National Institute of Standards and Technology (U.S.), eds. High resolution diffraction imaging of crystals grown in microgravity and closely related terrestrial crystals. U.S. Dept. of Commerce, National Institute of Standards and Technology, 1991.

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Robinson, Marlene M. Crystals: What they are and how to grow them. Running Press, 1988.

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W, Palosz, and United States. National Aeronautics and Space Administration., eds. Characterization of cadmium-zinc telluride crystals grown by 'contactless' PVT using synchrotron white beam topography. Elsevier, 1997.

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Capítulos de livros sobre o assunto "Grown crystal"

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Abbona, Francesco, and Dino Aquilano. "Morphology of Crystals Grown from Solutions." In Springer Handbook of Crystal Growth. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-74761-1_3.

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Sunagawa, Ichiro. "Single Crystals Grown Under Unconstrained Conditions." In Springer Handbook of Crystal Growth. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-74761-1_5.

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Yao, Xin, Akihiro Oka, Teruo Izumi, and Yuh Shiohara. "Fe-Doped YBCO Single Crystals Grown By Crystal Pulling." In Advances in Superconductivity XII. Springer Japan, 2000. http://dx.doi.org/10.1007/978-4-431-66877-0_132.

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Yamada, Y., Y. Shiohara, and S. Tanaka. "Growth Mechanism of Yba2Cu3Ox Single Crystal Grown by Crystal Pulling." In Advances in Superconductivity VI. Springer Japan, 1994. http://dx.doi.org/10.1007/978-4-431-68266-0_180.

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Tagami, M., Y. Yamada, M. Nakamura, Y. Shiohara, and S. Tanaka. "Characterization of YBa2Cu3O7-δ Single Crystal Grown by Crystal Pulling." In Advances in Superconductivity V. Springer Japan, 1993. http://dx.doi.org/10.1007/978-4-431-68305-6_132.

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Kiessling, Frank M. "Characterization and Control of Defects in VCz GaAs Crystals Grown without B2O3 Encapsulant." In Crystal Growth Technology. Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527632879.ch5.

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Su, Ching-Hua. "Residual Gas Measurements and Morphology Characterization on Grown Crystals." In Vapor Crystal Growth and Characterization. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-39655-8_5.

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Ishida, Y., M. Nakamura, Y. Yamada, Z. Nakagawa, and Y. Shiohara. "Initial Growth Mechanism of YBCO Single Crystal Grown by Crystal Pulling." In Advances in Superconductivity VII. Springer Japan, 1995. http://dx.doi.org/10.1007/978-4-431-68535-7_141.

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Aggarwal, Mohan D., Ashok K. Batra, Ravindra B. Lal, Benjamin G. Penn, and Donald O. Frazier. "Bulk Single Crystals Grown from Solution on Earth and in Microgravity." In Springer Handbook of Crystal Growth. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-74761-1_17.

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Lebbou, Kheirreddine, and Georges Boulon. "Oxide Fiber Crystals Grown by μ-PD and LHPG Techniques." In Fiber Crystal Growth from the Melt. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07214-1_7.

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Trabalhos de conferências sobre o assunto "Grown crystal"

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Zhang, Wenjin, Tomoya Ogawa, Takahiko Endo, et al. "Dry transfer and optical properties of CVD-grown transition metal dichalcogenides." In JSAP-Optica Joint Symposia. Optica Publishing Group, 2024. https://doi.org/10.1364/jsapo.2024.17a_a35_8.

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Improving the transfer technique of 2D materials is an important issue for their fundamental study and future applications. Even though much progress has been made, the search for exfoliated thin and sufficiently large flakes of 2D materials is still very time-consuming. In contrast, the use of triangular single crystals of transition metal dichalcogenides (TMDCs) allows for easy determination of crystal orientation and thus easy control of twist angles. However, there have been only a few reports on dry transfer and its effect on the optical properties of CVD-grown TMDCs. One of the major tec
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Aashna, Pragati, Hong-Lin Lin, Yu Cao, et al. "Periodic poling of single crystal thin film barium titanate-on-insulator." In CLEO: Science and Innovations. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_si.2024.stu3e.5.

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We report, for the first time, electric field periodic poling of single-crystal thin film barium titanate grown using pulsed-laser-deposition on dysprosium scandate substrate. Uniform domains with periods 5-7 μm are obtained and imaged using piezo-response-force-microscopy.
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Chang, R. S. F., S. Sengupta, L. B. Shaw, and N. Djeu. "Laser-heated pedestal growth: a viable technique for laser material evaluation studies." In OSA Annual Meeting. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.tuu21.

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The key to an effective laser material evaluation program is a ready supply of crystals at a reasonable cost. For most studies a crystal rod size of 1-mm diameter and 10-mm length is sufficient. More important for material optimization is the number of crystals with different dopant concentrations. Bulk growth techniques would not be appropriate for this task. This paper presents the laser-heated pedestal growth technique as a fast and cost-effective way to grow small laser crystals. Rare earth doped garnets of good crystal quality are now routinely grown at our facility. Lifetime measurements
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Sasaki, Takatomo, Akio Miyamoto, Sadao Nakai, and Atsushi Yokotani. "Non-uniformity of the Phase Matching Angle in Flux Grown KTP Crystal." In Compact Blue-Green Lasers. Optica Publishing Group, 1993. http://dx.doi.org/10.1364/cbgl.1993.jwc.5.

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We grew KTP crystals of which size is over 8.5 cm in the c-axis from flux, and measured distribution of refractive indices which affects on the phase matching angle in the grown crystal. As a result, we have found that the phase matching angle in the crystal changed considerably corresponding to the change in the refractive indices. As the refractive indices of KTP crystal grown by flux change due to the growth condition, it seems to be difficult to determine the phase matching angle precisely.
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Chang, R. S. F., S. Chaddha, S. Sengupta та N. Djeu. "Performance of a 2-μm laser in Tm:YAG grown by a laser-heated pedestal growth technique". У OSA Annual Meeting. Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.thl4.

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The laser-heated pedestal growth (LHPG) technique for rapid growth of laser crystals can provide small crystal rods at a lower cost than can bulk-growth methods. We have been able to grow a variety of rare-earth-doped garnets and fluorides. Controlled doping was achieved by mixing powdered dopant and host materials in our feedstock preparation. In this paper we report laser performance in Tm:YAG with a sample grown at our facility. The 3% doped sample was 1 mm in diameter and 3 mm long. The minirod had flat and parallel surfaces with an antireflection coating at 2 μm. An argon-pumped Ti:sapphi
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Jiang, Minhua. "Crystal growth in China." In OSA Annual Meeting. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.tum2.

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Crystal growth in China, with a history of about 1000 years, has been developing rapidly since the end of 1950. A powerful crystal growth community has been forming during the last three decades and many well-trained experts are now spread over the institutions of the Chinese Academy of Sciences, universities, and industrial departments, each with its own characteristic. The crystal growth techniques have now reached a higher level. Almost all the artificial crystals needed for high tech in China today (including the major nonlinear optical crystals BGO, BBO, KTP, LiNbO3, KNbO3, and the KDP fa
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Gliko, O. A., I. I. Naumova, J. J. Ju, H. K. Kim, and M. Cha. "Nonlinear Optical Properties of Czochralski-Grown Periodically Poled LiNbO3 Crystals." In The European Conference on Lasers and Electro-Optics. Optica Publishing Group, 1998. http://dx.doi.org/10.1364/cleo_europe.1998.ctua7.

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Bulk periodically poled LiNbO3 crystal is a promising material for nonlinear optical devices using quasi-phase matching In particular, frequency doubling of near-infrared radiation into the blue spectra range and optical parametric oscillation are of importance. The spatial modulation of the nonlinear susceptibility is realized in lithium niobate by formation of periodically reversed domain pattern. In this work the periodic domain structure was formed in LiNbO3:Nd:Mg crystals by means of the modulation of impurity incorporation during the process of crystal growth. We investigated the correla
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Kapustnyk, O. K., D. S. Sofronov, I. S. Terzin, S. V. Naydenov, I. M. Prytula, and N. O. Kovalenko. "Growth of Cd0.9Zn0.1Te1-ySey Crystals for Radiation Detection Applications." In International Young Scientists Conference on Materials Science and Surface Engineering. Karpenko Physico-Mechanical Institute of the NAS of Ukraine, 2023. http://dx.doi.org/10.15407/msse2023.101.

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Crystals of solid solutions Cd0.9Zn0.1Te1-ySey with selenium concentration y = 0.02 – 0.07 were grown by the vertical Bridgman method under high pressure of argon gas (up to 26 atm) in graphite crucibles. The obtained crystals are characterized by the crystal structure similar to Cd0.9Zn0.1Te crystals. The distributions of the elemental composition in grown crystals were studied for different ways of raw materials loading. To obtain high-resistivity (detector) crystals an additional doping with Indium was carried out.
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Guo, Xingan, Meiling Chen, Nairen Li, Xinghi Chen, Botao Jiang, and Xiangting Li. "Polycrystal formation during Czochralski growth of alexandrite crystals: investigation of the melt aging mechanism." In International Laser Science Conference. Optica Publishing Group, 1986. http://dx.doi.org/10.1364/ils.1986.thl4.

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There are some anomalies in Czochralski growth of alexandrite crystals, that is, as the melt becomes older it is hard to grow a clear crystal even when a good seed is used. Topographic observation and microscopic component BeAl2O4:Cr3+ crystals (three samples) grown in our laboratory was carried out by EPMA. The result shows that these three samples are not single crystals but poly­crystals in which there are grain boundaries, bubbles, and a large amount of inclusion gatherings. These cause scattering and absorption of light and spoil the transparency of the crystal. In fact, the so-called mel
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Banerjee, Jyotirmay, and K. Muralidhar. "Simulation of Transport Phenomena and Interfacial Dynamics During Czochralski Growth of Oxide Crystals." In ASME 2008 6th International Conference on Nanochannels, Microchannels, and Minichannels. ASMEDC, 2008. http://dx.doi.org/10.1115/icnmm2008-62116.

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The quality of crystal grown in a Czochralski apparatus depends on a well organized flow and thermal field in the vicinity of the melt-crystal interface. A mathematical model that explores transport phenomena and the formation, evaluation and dynamics of the interface in a Czochralski apparatus is presented. The numerical formulation allows for the consideration of conduction in the crystal, conduction and convection in the melt and the gas phase, surface tension gradients, bulk and surface radiation and crystal rotation. Low temperature experiments using liquid crystal thermography have been
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Relatórios de organizações sobre o assunto "Grown crystal"

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Roberts, Joel Glenn. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction. Office of Scientific and Technical Information (OSTI), 2000. http://dx.doi.org/10.2172/764397.

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Lupinski, Dominique. Investigating and Supplying Halid Flux-Grown KTP Crystals. Defense Technical Information Center, 1995. http://dx.doi.org/10.21236/ada298749.

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Fichtel II, Michael David. TA-16-0303 Crystal Grow Lab Renovation. Office of Scientific and Technical Information (OSTI), 2020. http://dx.doi.org/10.2172/1616419.

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Fichtel, Michael David II. TA-16-0303 Crystal Grow Lab Renovation. Office of Scientific and Technical Information (OSTI), 2019. http://dx.doi.org/10.2172/1575759.

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Fichtel, Michael David II. TA-16-0303 Crystal Grow Lab Renovation. Office of Scientific and Technical Information (OSTI), 2020. http://dx.doi.org/10.2172/1595650.

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Steiner, Bruce W. High resolution diffraction imaging of crystals grown in microgravity and closely related terrestrial crystals. National Bureau of Standards, 1991. http://dx.doi.org/10.6028/nist.tn.1287.

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Dr. Longxia Li. Annealing as grown large volume CZT single crystals increased spectral resolution. Office of Scientific and Technical Information (OSTI), 2008. http://dx.doi.org/10.2172/965269.

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Nason, D., and L. Keller. The growth and crystallography of bismuth tri-iodide crystals grown by vapor transport. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/105857.

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De Yoreo, J., N. Zaitseva, and B. Woods. Sources of strain in rapidly grown crystals of KH{sub 2}PO{sub 4}. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/105045.

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Aumann, C. E., Y. W. Mo, and M. G. Lagally. Diffraction Determination of the Structure of Metastable Three- Dimensional Crystals of Ge Grown on Si(001). Defense Technical Information Center, 1991. http://dx.doi.org/10.21236/ada236871.

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