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Статті в журналах з теми "Atomic Layer Etching"

Автор: Grafiati

Опубліковано: 19 жовтня 2024

Оновлено: 19 липня 2025

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1

AOYAGI, Yoshinobu, and Takashi MEGURO. "Atomic Layer Etching." Nihon Kessho Gakkaishi 33, no. 3 (1991): 169–74. http://dx.doi.org/10.5940/jcrsj.33.169.

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2

Eliceiri, Matthew, Yoonsoo Rho, Runxuan Li, and Costas P. Grigoropoulos. "Pulsed laser induced atomic layer etching of silicon." Journal of Vacuum Science & Technology A 41, no. 2 (2023): 022602. http://dx.doi.org/10.1116/6.0002399.

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Анотація:

We demonstrate the laser mediated atomic layer etching (ALEt) of silicon. Using a nanosecond pulsed 266 nm laser focused loosely over and in a parallel configuration to the surface of the silicon, we dissociate Cl2 gas to induce chlorination. Then, we use pulsed picosecond irradiation to remove the chlorinated layer. Subsequently, we perform continuous wave (CW) laser annealing to eliminate amorphization caused by the picosecond laser etching. Based on atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), we observed strong evidence of chlorination and digital etching at 0.

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3

Hatch, Kevin A., Daniel C. Messina, and Robert J. Nemanich. "Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium." Journal of Vacuum Science & Technology A 40, no. 4 (2022): 042603. http://dx.doi.org/10.1116/6.0001871.

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Atomic layer etching driven by self-limiting thermal reactions has recently been developed as a highly conformal and isotropic technique for low damage atomic scale material removal by sequential exposures of vapor phase reactants. Gallium oxide (Ga2O3) is currently among the materials of interest due to a large variety of applications including power electronics, solar cells, gas sensors, and photon detectors. In this study, Ga2O3 was deposited by plasma enhanced atomic layer deposition using trimethylgallium [TMG, Ga(CH3)3] and O2 plasma at a substrate temperature of 200 °C. We report a newl

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4

Reif, Johanna, Martin Knaut, Sebastian Killge, Matthias Albert, Thomas Mikolajick, and Johann W. Bartha. "In situ studies on atomic layer etching of aluminum oxide using sequential reactions with trimethylaluminum and hydrogen fluoride." Journal of Vacuum Science & Technology A 40, no. 3 (2022): 032602. http://dx.doi.org/10.1116/6.0001630.

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Controlled thin film etching is essential for future semiconductor devices, especially with complex high aspect ratio structures. Therefore, self-limiting atomic layer etching processes are of great interest to the semiconductor industry. In this work, a process for atomic layer etching of aluminum oxide (Al2O3) films using sequential and self-limiting thermal reactions with trimethylaluminum and hydrogen fluoride as reactants was demonstrated. The Al2O3 films were grown by atomic layer deposition using trimethylaluminum and water. The cycle-by-cycle etching was monitored throughout the entire

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5

George, Steven M. "(Tutorial) Thermal Atomic Layer Etching." ECS Meeting Abstracts MA2021-02, no. 29 (2021): 847. http://dx.doi.org/10.1149/ma2021-0229847mtgabs.

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6

Ikeda, Keiji, Shigeru Imai, and Masakiyo Matsumura. "Atomic layer etching of germanium." Applied Surface Science 112 (March 1997): 87–91. http://dx.doi.org/10.1016/s0169-4332(96)00995-6.

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7

Yao, Yong Zhao, Yukari Ishikawa, Yoshihiro Sugawara, and Koji Sato. "Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC Wafers by Using Chemical Etching with Molten KCl+KOH." Materials Science Forum 778-780 (February 2014): 746–49. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.746.

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High temperature (>1000 °C) chemical etching using molten KCl or molten KCl+KOH as the etchant has been carried out to remove the mechanical-polishing (MP) induced damage layer from 4H-SiC surface. Atomic force microscopy observations have shown that line-shaped surface scratches that have appeared on the as-MPed surface could be completely removed by KCl-only etching or by KCl+KOH etching (KCl:KOH=99:1 in weight) at ~1100 °C. Between the two recipes, KCl+KOH etching has shown a higher etch rate (6~7 times) and is able to remove ~9 μm and ~36 μm-thick damage layer from the Si (0001) and the

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8

Oh, Chang-Kwon, Sang-Duk Park, and Geun-Young Yeom. "Atomic Layer Etching of Silicon Using a Ar Neutral Beam of Low Energy." Korean Journal of Materials Research 16, no. 4 (2006): 213–17. http://dx.doi.org/10.3740/mrsk.2006.16.4.213.

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9

Nieminen, Heta-Elisa, Mykhailo Chundak, Mikko J. Heikkilä, et al. "In vacuo cluster tool for studying reaction mechanisms in atomic layer deposition and atomic layer etching processes." Journal of Vacuum Science & Technology A 41, no. 2 (2023): 022401. http://dx.doi.org/10.1116/6.0002312.

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Анотація:

In this paper, we introduce a vacuum cluster tool designed specifically for studying reaction mechanisms in atomic layer deposition (ALD) and atomic layer etching (ALE) processes. In the tool, a commercial flow-type ALD reactor is in vacuo connected to a set of UHV chambers so that versatile surface characterization is possible without breaking the vacuum environment. This way the surface composition and reaction intermediates formed during the precursor or etchant pulses can be studied in very close to true ALD and ALE processing conditions. Measurements done at each step of the deposition or

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10

Hirano, Tomoki, Kenya Nishio, Takashi Fukatani, Suguru Saito, Yoshiya Hagimoto, and Hayato Iwamoto. "Characterization of Wet Chemical Atomic Layer Etching of InGaAs." Solid State Phenomena 314 (February 2021): 95–98. http://dx.doi.org/10.4028/www.scientific.net/ssp.314.95.

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In this work, we characterized the wet chemical atomic layer etching of an InGaAs surface by using various surface analysis methods. For this etching process, H2O2 was used to create a self-limiting oxide layer. Oxide removal was studied for both HCl and NH4OH solutions. Less In oxide tended to remain after the HCl treatment than after the NH4OH treatment, so the combination of H2O2 and HCl is suitable for wet chemical atomic layer etching. In addition, we found that repetition of this etching process does not impact on the oxide amount, surface roughness, and interface state density. Thus, na

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11

Crawford, Kevin G., James Grant, Dilini Tania Hemakumara, Xu Li, Iain Thayne, and David A. J. Moran. "High synergy atomic layer etching of AlGaN/GaN with HBr and Ar." Journal of Vacuum Science & Technology A 40, no. 4 (2022): 042601. http://dx.doi.org/10.1116/6.0001862.

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Here, we show a process of AlGaN/GaN atomic layer etching with a high synergy of >91%. Achieved by means of a cyclical HBr and Ar process, highly controllable layer removal was observed within the atomic layer etching window and is attributed to careful parameter calibration plus lower reactivity of the HBr chemistry. Such etching is a valuable component in the production of high-performance enhancement-mode GaN field effect transistor devices.

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12

Lill, Thorsten. "(Invited) Atomic Layer Etching: Basics, New Developments & Applications." ECS Meeting Abstracts MA2024-02, no. 30 (2024): 2231. https://doi.org/10.1149/ma2024-02302231mtgabs.

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Анотація:

Atomic layer etching (ALE) is becoming an important technology for patterning and shaping of electronic and photonic devices. This tutorial briefly recaps the fundamentals of thermal, directional and plasma assisted atomic layer etching. Performance benefits and limitations for ALE in comparison to the continuous processing analogues such as reactive ion etching, radical and vapor etching are the consequence of the cyclic self-limited structure of ALE processes. Selection criteria for the appropriate etching technology for a given task will be presented. The enormous progress in the developmen

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13

Fischer, Andreas, Aaron Routzahn, Steven M. George, and Thorsten Lill. "Thermal atomic layer etching: A review." Journal of Vacuum Science & Technology A 39, no. 3 (2021): 030801. http://dx.doi.org/10.1116/6.0000894.

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14

T. Carver, Colin, John J. Plombon, Patricio E. Romero, Satyarth Suri, Tristan A. Tronic, and Robert B. Turkot. "Atomic Layer Etching: An Industry Perspective." ECS Journal of Solid State Science and Technology 4, no. 6 (2015): N5005—N5009. http://dx.doi.org/10.1149/2.0021506jss.

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15

TAKAKUWA, Yuji. "Surface Reactions in Atomic Layer Etching." Hyomen Kagaku 16, no. 6 (1995): 373–77. http://dx.doi.org/10.1380/jsssj.16.373.

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16

Kanarik, Keren J., Samantha Tan, Wenbing Yang, et al. "Predicting synergy in atomic layer etching." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35, no. 5 (2017): 05C302. http://dx.doi.org/10.1116/1.4979019.

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17

Gong, Yukun, and Rohan Akolkar. "Electrochemical Atomic Layer Etching of Ruthenium." Journal of The Electrochemical Society 167, no. 6 (2020): 062510. http://dx.doi.org/10.1149/1945-7111/ab864b.

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18

Chalker, P. R. "Photochemical atomic layer deposition and etching." Surface and Coatings Technology 291 (April 2016): 258–63. http://dx.doi.org/10.1016/j.surfcoat.2016.02.046.

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19

George, Steven M. "Mechanisms of Thermal Atomic Layer Etching." Accounts of Chemical Research 53, no. 6 (2020): 1151–60. http://dx.doi.org/10.1021/acs.accounts.0c00084.

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20

Kuzmenko, V., A. Miakonkikh, and K. Rudenko. "Atomic layer etching of Silicon Oxide." Journal of Physics: Conference Series 1410 (December 2019): 012023. http://dx.doi.org/10.1088/1742-6596/1410/1/012023.

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21

Faraz, T., F. Roozeboom, H. C. M. Knoops, and W. M. M. Kessels. "Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?" ECS Journal of Solid State Science and Technology 4, no. 6 (2015): N5023—N5032. http://dx.doi.org/10.1149/2.0051506jss.

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22

de Marneffe, J. F., D. Marinov, A. Goodyear, et al. "Plasma enhanced atomic layer etching of high-k layers on WS₂." Journal of Vacuum Science & Technology A 40, no. 4 (2022): 042602. http://dx.doi.org/10.1116/6.0001726.

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The etching of HfO[Formula: see text] and ZrO[Formula: see text] high-k dielectrics is studied using plasma enhanced atomic layer etching. The etching method relies on a continuous argon inductively coupled plasma discharge in which reactive gases are pulsed, followed by substrate biasing; both steps are separated by purge periods. It is found that pure BCl[Formula: see text] is too chemically active while a Cl[Formula: see text]–BCl[Formula: see text] allows a high process synergy; in addition, the latter gives a high selectivity to SiO[Formula: see text]. The optimal etch conditions are appl

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23

Yao, Yikun, Xinjia Zhao, Xiangqian Tang, Jianmei Li, Xinyan Shan, and Xinghua Lu. "Laser etching of 2D materials with single-layer precision up to ten layers." Journal of Laser Applications 34, no. 4 (2022): 042051. http://dx.doi.org/10.2351/7.0000848.

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Patterned 2D materials with layer-controlled thickness and precise lateral resolution are of great potential for many applications. Laser etching is a promising technique for large-scale patterning of 2D materials, but better control in film thickness is strongly desired. Here, we explore the dynamic characteristics in the laser etching process in which a local temperature lock phenomenon is observed as laser power reaches the etching threshold. A layer-by-layer etching strategy is then developed based on the temporal evolution of the local temperature as measured by in-situ Raman spectroscopy

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24

Hoffmann, M., J. A. Murdzek, S. M. George, S. Slesazeck, U. Schroeder, and T. Mikolajick. "Atomic layer etching of ferroelectric hafnium zirconium oxide thin films enables giant tunneling electroresistance." Applied Physics Letters 120, no. 12 (2022): 122901. http://dx.doi.org/10.1063/5.0084636.

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The ferroelectric properties of hafnium oxide and zirconium oxide based thin films are promising for applications in low power electronics, such as ultra-thin ferroelectric tunneling devices. However, the amount of ferroelectric phase in the film depends on their polycrystalline morphology, which changes with film thickness. Therefore, controlling the film thickness without changing the ferroelectric properties has remained challenging. Here, we propose the use of thermal atomic layer etching to decouple the ferroelectric phase stabilization from the film thickness. First, the ferroelectric ph

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25

Aroulanda, Sébastien, Olivier Patard, Philippe Altuntas, et al. "Cl2/Ar based atomic layer etching of AlGaN layers." Journal of Vacuum Science & Technology A 37, no. 4 (2019): 041001. http://dx.doi.org/10.1116/1.5090106.

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26

Kim, Y. Y., W. S. Lim, J. B. Park, and G. Y. Yeom. "Layer by Layer Etching of the Highly Oriented Pyrolythic Graphite by Using Atomic Layer Etching." Journal of The Electrochemical Society 158, no. 12 (2011): D710. http://dx.doi.org/10.1149/2.061112jes.

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27

Guan, Lulu, Xingyu Li, Dongchen Che, Kaidong Xu, and Shiwei Zhuang. "Plasma atomic layer etching of GaN/AlGaN materials and application: An overview." Journal of Semiconductors 43, no. 11 (2022): 113101. http://dx.doi.org/10.1088/1674-4926/43/11/113101.

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Abstract With the development of the third generation of semiconductor devices, it is essential to achieve precise etching of gallium nitride (GaN) materials that is close to the atomic level. Compared with the traditional wet etching and continuous plasma etching, plasma atomic layer etching (ALE) of GaN has the advantages of self-limiting etching, high selectivity to other materials, and smooth etched surface. In this paper the basic properties and applications of GaN are presented. It also presents the various etching methods of GaN. GaN plasma ALE systems are reviewed, and their similariti

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28

Hirata, Akiko, Masanaga Fukasawa, Katsuhisa Kugimiya, et al. "Mechanism of SiN etching rate fluctuation in atomic layer etching." Journal of Vacuum Science & Technology A 38, no. 6 (2020): 062601. http://dx.doi.org/10.1116/6.0000257.

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29

Jung, Junho, and Kyongnam Kim. "Atomic Layer Etching Using a Novel Radical Generation Module." Materials 16, no. 10 (2023): 3611. http://dx.doi.org/10.3390/ma16103611.

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To fabricate miniature semiconductors of 10 nm or less, various process technologies have reached their physical limits, and new process technologies for miniaturization are required. In the etching process, problems such as surface damage and profile distortion have been reported during etching using conventional plasma. Therefore, several studies have reported novel etching techniques such as atomic layer etching (ALE). In this study, a new type of adsorption module, called the radical generation module, was developed and applied in the ALE process. Using this module, the adsorption time cou

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30

Lee, Y., J. W. DuMont, and S. M. George. "(Invited) Atomic Layer Etching Using Thermal Reactions: Atomic Layer Deposition in Reverse." ECS Transactions 69, no. 7 (2015): 233–41. http://dx.doi.org/10.1149/06907.0233ecst.

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31

Kim, Seon Yong, In-Sung Park, and Jinho Ahn. "Atomic layer etching of SiO2 using trifluoroiodomethane." Applied Surface Science 589 (July 2022): 153045. http://dx.doi.org/10.1016/j.apsusc.2022.153045.

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32

Kim, Doo San, Ju Eun Kim, You Jung Gill, et al. "Anisotropic/Isotropic Atomic Layer Etching of Metals." Applied Science and Convergence Technology 29, no. 3 (2020): 41–49. http://dx.doi.org/10.5757/asct.2020.29.3.041.

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33

Sakaue, Hiroyuki, Seiji Iseda, Kazushi Asami, Jirou Yamamoto, Masataka Hirose, and Yasuhiro Horiike. "Atomic Layer Controlled Digital Etching of Silicon." Japanese Journal of Applied Physics 29, Part 1, No. 11 (1990): 2648–52. http://dx.doi.org/10.1143/jjap.29.2648.

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34

Sherpa, Sonam D., and Alok Ranjan. "Quasi-atomic layer etching of silicon nitride." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35, no. 1 (2017): 01A102. http://dx.doi.org/10.1116/1.4967236.

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35

Kauppinen, Christoffer, Sabbir Ahmed Khan, Jonas Sundqvist, et al. "Atomic layer etching of gallium nitride (0001)." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35, no. 6 (2017): 060603. http://dx.doi.org/10.1116/1.4993996.

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36

Gong, Yukun, Kailash Venkatraman, and Rohan Akolkar. "Communication—Electrochemical Atomic Layer Etching of Copper." Journal of The Electrochemical Society 165, no. 7 (2018): D282—D284. http://dx.doi.org/10.1149/2.0901807jes.

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37

Athavale, Satish D. "Realization of atomic layer etching of silicon." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, no. 6 (1996): 3702. http://dx.doi.org/10.1116/1.588651.

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38

Kanarik, Keren J., Samantha Tan, Wenbing Yang, Ivan L. Berry, Yang Pan, and Richard A. Gottscho. "Universal scaling relationship for atomic layer etching." Journal of Vacuum Science & Technology A 39, no. 1 (2021): 010401. http://dx.doi.org/10.1116/6.0000762.

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39

Pollet, Olivier, Nicolas Possémé, Vincent Ah-Leung, and Maxime Garcia Barros. "Thin Layer Etching of Silicon Nitride: Comparison of Downstream Plasma, Liquid HF and Gaseous HF Processes for Selective Removal after Light Ion Implantation." Solid State Phenomena 255 (September 2016): 69–74. http://dx.doi.org/10.4028/www.scientific.net/ssp.255.69.

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For technology nodes beyond 14nm silicon nitride spacer etching has become a major challenge. Conventional plasma etching techniques based on CHF3/O2 cannot achieve thorough nitride removal on horizontal surfaces without inducing either CD loss or Si/SiGe source/drain recess. This leads to either gate leakage increase or poor raised source/drain epitaxy. To overcome atomic scale control issues faced with continuous plasma processes, several techniques aiming at achieving atomic layer etching or thin layer etching were recently described [1]. An original etching approach has been reported which

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40

Fischer, Andreas, Aaron Routzahn, Younghee Lee, Thorsten Lill, and Steven M. George. "Thermal etching of AlF3 and thermal atomic layer etching of Al2O3." Journal of Vacuum Science & Technology A 38, no. 2 (2020): 022603. http://dx.doi.org/10.1116/1.5135911.

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41

Park, Sang-Duk, Kyung-Suk Min, Byoung-Young Yoon, Do-Haing Lee, and Geun-Young Yeom. "Precise Depth Control of Silicon Etching Using Chlorine Atomic Layer Etching." Japanese Journal of Applied Physics 44, no. 1A (2005): 389–93. http://dx.doi.org/10.1143/jjap.44.389.

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42

Tsutsumi, Takayoshi, Masaru Zaitsu, Akiko Kobayashi, Nobuyoshi Kobayashi, and Masaru Hori. "(Invited) Advanced Plasma Etching Processing: Atomic Layer Etching for Nanoscale Devices." ECS Transactions 77, no. 3 (2017): 25–28. http://dx.doi.org/10.1149/07703.0025ecst.

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43

Khan, M. B., Sh Shakeel, K. Richter, S. Ghosh, A. Erbe, and Yo M. Georgiev. "Atomic layer etching of nanowires using conventional reactive ion etching tool." Journal of Physics: Conference Series 2443, no. 1 (2023): 012004. http://dx.doi.org/10.1088/1742-6596/2443/1/012004.

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Abstract Innovative material and processing concepts are needed to further enhance the performance of complementary metal-oxide-semiconductor (CMOS) transistors-based circuits as the scaling limits are being reached. To supplement that, we report on the development of an atomic layer etching (ALE) process to fabricate small and smooth nanowires using a conventional dry etching tool. Firstly, a negative tone resist (hydrogen silsesquioxane) is spin-coated on Silicon Germanium-on-insulator (SiGeOI) samples and electron beam lithography is performed to create nanopatterns. These patterns act as a

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44

Abromavičius, Giedrius, Martynas Skapas, and Remigijus Juškėnas. "Enhancing Laser Damage Resistance of Co2+:MgAl2O4 Crystal by Plasma Etching." Applied Sciences 13, no. 2 (2023): 1150. http://dx.doi.org/10.3390/app13021150.

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Co2+:MgAl2O4 crystals are successfully used as passive Q-switches within the cavity of erbium glass lasers. Their limited resistance to laser radiation might also put constraints on the generated output peak power. Usually, polishing of optical substrates induces a contaminated Beilby layer and damages the subsurface layer, which leads to a considerably lower optical resistance of the obtained surface. Low-energy oxygen plasma etching using different depths of 50, 100, 250 and 400 nm was performed on polished crystals. The surface morphology by atomic force microscopy, transmission spectra, su

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45

Chittock, Nicholas John, Wilhelmus M. M. (Erwin) Kessels, Harm Knoops, and Adrie Mackus. "(Invited) The Use of Plasmas for Isotropic Atomic Layer Etching." ECS Meeting Abstracts MA2023-02, no. 29 (2023): 1464. http://dx.doi.org/10.1149/ma2023-02291464mtgabs.

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Atomic layer etching (ALE) is set to be a vital part of the advanced semiconductor manufacturing toolbox, known for its precise control of the film thickness and minimal damage. These benefits are possible due to the sequential self-limiting half-cycles that are employed within an ALE process. Initially, ALE was underestimated due to low etch rates, but it is now experiencing a renaissance due to the requirements imposed by further downscaling.1 The ALE community is mostly divided into two groups: plasma anisotropic and thermal isotropic etching. 2 In this work, the focus is on exploring isotr

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46

Han, Wei, Paven Thomas Mathew, Srikanth Kolagatla, Brian J. Rodriguez, and Fengzhou Fang. "Toward Single-Atomic-Layer Lithography on Highly Oriented Pyrolytic Graphite Surfaces Using AFM-Based Electrochemical Etching." Nanomanufacturing and Metrology 5, no. 1 (2022): 32–38. http://dx.doi.org/10.1007/s41871-022-00127-9.

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AbstractAtomic force microscopy (AFM)-based electrochemical etching of a highly oriented pyrolytic graphite (HOPG) surface is studied toward the single-atomic-layer lithography of intricate patterns. Electrochemical etching is performed in the water meniscus formed between the AFM tip apex and HOPG surface due to a capillary effect under controlled high relative humidity (~ 75%) at otherwise ambient conditions. The conditions to etch nano-holes, nano-lines, and other intricate patterns are investigated. The electrochemical reactions of HOPG etching should not generate debris due to the convers

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Hou, Qingyan, Ming Li, Rongli Cui, Peng Liu, Shuaipeng Yue, and Guangcai Chang. "Refurbishment of W/B₄C multilayers on Si substrate by etching a chromium buffer layer." Optics Express 30, no. 26 (2022): 48042. http://dx.doi.org/10.1364/oe.477147.

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In synchrotron facilities, optics with multilayer coatings are used for beam monochromatization, focusing, and collimation. These coatings might be damaged by high heat load, poor film adhesion, high internal stress, or poor vacuum. Optical substrates always need high quality, which is expensive and has a long processing cycle. Therefore, it is desired to make the substrate reusable and the refurbished coating as good as a brand-new one. In this study, a W/B4C multilayer coating with a 2 nm Cr buffer layer was prepared on a Si substrate. The coating was successfully stripped from the Si substr

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Tsai, Yuanlu, Zhiteng Li, and Shaojie Hu. "Recent Progress of Atomic Layer Technology in Spintronics: Mechanism, Materials and Prospects." Nanomaterials 12, no. 4 (2022): 661. http://dx.doi.org/10.3390/nano12040661.

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The atomic layer technique is generating a lot of excitement and study due to its profound physics and enormous potential in device fabrication. This article reviews current developments in atomic layer technology for spintronics, including atomic layer deposition (ALD) and atomic layer etching (ALE). To begin, we introduce the main atomic layer deposition techniques. Then, in a brief review, we discuss ALE technology for insulators, semiconductors, metals, and newly created two-dimensional van der Waals materials. Additionally, we compare the critical factors learned from ALD to constructing

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MOCHIJI, KOZO. "Atomic Layer Etching by Using Multiply-Charged Ions." Hyomen Kagaku 16, no. 6 (1995): 367–72. http://dx.doi.org/10.1380/jsssj.16.367.

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Tan, Samantha, Wenbing Yang, Keren J. Kanarik, et al. "Highly Selective Directional Atomic Layer Etching of Silicon." ECS Journal of Solid State Science and Technology 4, no. 6 (2015): N5010—N5012. http://dx.doi.org/10.1149/2.0031506jss.

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