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Статті в журналах з теми "Compact analytical model"

Автор: Grafiati

Опубліковано: 20 квітня 2024

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1

Paul, Bipul C., Ryan Tu, Shinobu Fujita, Masaki Okajima, Thomas H. Lee, and Yoshio Nishi. "An Analytical Compact Circuit Model for Nanowire FET." IEEE Transactions on Electron Devices 54, no. 7 (2007): 1637–44. http://dx.doi.org/10.1109/ted.2007.899397.

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2

Banerjee, Ayan, M. K. Jasim, and Anirudh Pradhan. "Analytical model of dark energy stars." Modern Physics Letters A 35, no. 10 (2020): 2050071. http://dx.doi.org/10.1142/s0217732320500716.

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In this paper, we study the structure and stability of compact astrophysical objects which are ruled by the dark energy equation of state (EoS). The existence of dark energy is important for explaining the current accelerated expansion of the universe. Exact solutions to Einstein field equations (EFE) have been found by considering particularized metric potential, Finch and Skea ansatz. 1 The obtained solutions are relevant to the explanation of compact fluid sphere. Further, we have observed at the junction interface that the interior solution is matched with the Schwarzschild’s exterior vacu

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3

Verma, Yogesh Kumar, Varun Mishra, and Santosh Kumar Gupta. "A Physics-Based Analytical Model for MgZnO/ZnO HEMT." Journal of Circuits, Systems and Computers 29, no. 01 (2019): 2050009. http://dx.doi.org/10.1142/s0218126620500097.

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In this paper, a physics-based compact model is developed for novel MgZnO/ZnO high-electron-mobility transistor (HEMT). Poisson’s equation coupled with 1D Schrödinger equation is solved self-consistently in the triangular quantum well to derive an expression of two-dimensional electron gas (2DEG) density with respect to gate voltage at the heterointerface of barrier (MgZnO) and buffer (ZnO) layers. A compact mathematical framework has been devised further for the first time for ZnO-based HEMT to the best of our knowledge using the expression of 2DEG density to compute surface potential, gate c

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4

Baskey, Lipi, Shyam Das, and Farook Rahaman. "An analytical anisotropic compact stellar model of embedding class I." Modern Physics Letters A 36, no. 05 (2021): 2150028. http://dx.doi.org/10.1142/s0217732321500280.

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A class of solutions of Einstein field equations satisfying Karmarkar embedding condition is presented which could describe static, spherical fluid configurations, and could serve as models for compact stars. The fluid under consideration has unequal principal stresses i.e. fluid is locally anisotropic. A certain physically motivated geometry of metric potential has been chosen and codependency of the metric potentials outlines the formation of the model. The exterior spacetime is assumed as described by the exterior Schwarzschild solution. The smooth matching of the interior to the exterior S

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5

Pavanello, Marcelo Antonio, Renan Trevisoli, Rodrigo Trevisoli Doria, and Michelly de Souza. "Static and dynamic compact analytical model for junctionless nanowire transistors." Journal of Physics: Condensed Matter 30, no. 33 (2018): 334002. http://dx.doi.org/10.1088/1361-648x/aad34f.

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6

Naeve, T., M. Hohenbild, and P. Seegebrecht. "A new analytical compact model for two-dimensional finger photodiodes." Solid-State Electronics 52, no. 2 (2008): 299–304. http://dx.doi.org/10.1016/j.sse.2007.09.008.

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7

Balaguer, M., B. Iñiguez, and J. B. Roldán. "An analytical compact model for Schottky-barrier double gate MOSFETs." Solid-State Electronics 64, no. 1 (2011): 78–84. http://dx.doi.org/10.1016/j.sse.2011.06.045.

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8

Mantelli, M. B. H., and M. M. Yovanovich. "Compact analytical model for overall thermal resistance of bolted joints." International Journal of Heat and Mass Transfer 41, no. 10 (1998): 1255–66. http://dx.doi.org/10.1016/s0017-9310(97)00204-4.

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9

Inokawa, H., and Y. Takahashi. "A compact analytical model for asymmetric single-electron tunneling transistors." IEEE Transactions on Electron Devices 50, no. 2 (2003): 455–61. http://dx.doi.org/10.1109/ted.2002.808554.

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10

Jia, Yonghao, Yuehang Xu, Zhang Wen, Yunqiu Wu, and Yongxin Guo. "Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs." IEEE Transactions on Electron Devices 66, no. 1 (2019): 357–63. http://dx.doi.org/10.1109/ted.2018.2881255.

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11

Lobontiu, Nicolae, Morgan Moses, Jozef Hunter, Daniel Min, and Mircea Gh Munteanu. "A Compact Three-Dimensional Two-Layer Flexible Hinge." Machines 11, no. 8 (2023): 825. http://dx.doi.org/10.3390/machines11080825.

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The paper proposes a new three-dimensional flexible hinge formed of several serially linked straight- and circular-axis segments that are disposed of in two layers. The novel hinge configuration is capable of large displacements and can be implemented in precision-compliant mechanisms that need to cover large spatial workspaces. Based on simplified geometry, an analytical compliance model is formulated that connects the loads to the displacements at one end of the hinge. Finite element simulation and experimental prototype testing of actual-geometry hinge configurations confirm the analytical

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12

Rossello, J. L., and J. Segura. "An Analytical Charge-Based Compact Delay Model for Submicrometer CMOS Inverters." IEEE Transactions on Circuits and Systems I: Regular Papers 51, no. 7 (2004): 1301–11. http://dx.doi.org/10.1109/tcsi.2004.830692.

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13

Zong, Zhiwei, Ling Li, Jin Jang, Nianduan Lu, and Ming Liu. "Analytical surface-potential compact model for amorphous-IGZO thin-film transistors." Journal of Applied Physics 117, no. 21 (2015): 215705. http://dx.doi.org/10.1063/1.4922181.

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14

Ávila-Herrera, F., B. C. Paz, A. Cerdeira, M. Estrada, and M. A. Pavanello. "Charge-based compact analytical model for triple-gate junctionless nanowire transistors." Solid-State Electronics 122 (August 2016): 23–31. http://dx.doi.org/10.1016/j.sse.2016.04.013.

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15

Bazigos, Antonios, Christopher L. Ayala, Montserrat Fernandez-Bolanos, et al. "Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches." IEEE Transactions on Electron Devices 61, no. 6 (2014): 2186–94. http://dx.doi.org/10.1109/ted.2014.2318199.

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16

Hao, Yang, Jing Li, Federico Bianchi, et al. "Analytical Magnetic Model Towards Compact Design of Magnetically-Driven Capsule Robots." IEEE Transactions on Medical Robotics and Bionics 2, no. 2 (2020): 188–95. http://dx.doi.org/10.1109/tmrb.2020.2989335.

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17

Lázaro, A., B. Nae, C. Muthupandian, and B. Iñíguez. "High-frequency compact analytical noise model of gate-all-around MOSFETs." Semiconductor Science and Technology 25, no. 3 (2010): 035015. http://dx.doi.org/10.1088/0268-1242/25/3/035015.

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18

Lin, Kuan-Chou, Wei-Wen Ding, and Meng-Hsueh Chiang. "An Analytical Gate-All-Around MOSFET Model for Circuit Simulation." Advances in Materials Science and Engineering 2015 (2015): 1–5. http://dx.doi.org/10.1155/2015/320320.

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Анотація:

A generic charge-based compact model for undoped (lightly doped) quadruple-gate (QG) and cylindrical-gate MOSFETs using Verilog-A is developed. This model is based on the exact solution of Poisson’s equation with scale length. The fundamental DC and charging currents of QG MOSFETs are physically and analytically calculated. In addition, as the Verilog-A modeling is portable for different circuit simulators, the modeling scheme provides a useful tool for circuit designers.

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19

Kumar, P. "A compact analytical material model for unconfined concrete under uni-axial compression." Materials and Structures 37, no. 273 (2004): 585–90. http://dx.doi.org/10.1617/13974.

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20

Hyunsik Im, T. Inukai, H. Gomyo, T. Hiramoto, and T. Sakurai. "VTCMOS characteristics and its optimum conditions predicted by a compact analytical model." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 11, no. 5 (2003): 755–61. http://dx.doi.org/10.1109/tvlsi.2003.814320.

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21

Kumar, B. N., A. K. Singh, C. M. R. Prabhu, C. Venkataseshaiah, and G. C. Sheng. "Compact Analytical Model for One Dimensional Carbon Nanotube Field Effect Transistor (CNTFET)." ECS Solid State Letters 4, no. 6 (2015): M12—M14. http://dx.doi.org/10.1149/2.0031506ssl.

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22

Hao, Guangbo, Xiuyun He, and Shorya Awtar. "Design and analytical model of a compact flexure mechanism for translational motion." Mechanism and Machine Theory 142 (December 2019): 103593. http://dx.doi.org/10.1016/j.mechmachtheory.2019.103593.

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23

Chandra, S. Theodore, N. B. Balamurugan, G. Subalakshmi, T. Shalini, and G. Lakshmi Priya. "Compact analytical model for single gate AlInSb/InSb high electron mobility transistors." Journal of Semiconductors 35, no. 11 (2014): 114003. http://dx.doi.org/10.1088/1674-4926/35/11/114003.

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24

Inokawa, H., and Y. Takahasi. "Correction to "A compact analytical model for asymmetric single-electron tunneling transistors"." IEEE Transactions on Electron Devices 50, no. 3 (2003): 862. http://dx.doi.org/10.1109/ted.2003.814307.

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25

Kumar, P. "A compact analytical material model for unconfined concrete under uni-axial compression." Materials and Structures 37, no. 9 (2004): 585–90. http://dx.doi.org/10.1007/bf02483287.

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26

Poiroux, T., O. Rozeau, P. Scheer, et al. "Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model." IEEE Transactions on Electron Devices 62, no. 9 (2015): 2751–59. http://dx.doi.org/10.1109/ted.2015.2458339.

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27

Lu, Zhao Hui, Yan Gang Zhao, and Zhi Wu Yu. "A Strength Model for Square CFT Stub Columns with Compact Sections." Applied Mechanics and Materials 94-96 (September 2011): 425–30. http://dx.doi.org/10.4028/www.scientific.net/amm.94-96.425.

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This paper presents an investigation of ultimate strength of square CFT stub columns with compact sections. The beneficial composite action between the steel tube and the filled concrete is taken into account and a new analytical model for predicting the axial capacity of square CFT stub columns with compact sections is proposed. Experimental results of 89 axially loaded square CFT stub columns published in the literature are then used to verify the proposed strength model. Results show that the proposed strength model provides a direct, compact, and efficient representation of the ultimate st

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28

Jones, Nicholas A., and Jason Clark. "Analytical Modeling and Simulation of S-Drive Piezoelectric Actuators." Actuators 10, no. 5 (2021): 87. http://dx.doi.org/10.3390/act10050087.

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This paper presents a structural geometry for increasing piezoelectric deformation, which is suitable for both micro- and macro-scale applications. New and versatile microstructure geometries for actuators can improve device performance, and piezoelectric designs benefit from a high-frequency response, power density, and efficiency, making them a viable choice for a variety of applications. Previous works have presented piezoelectric structures capable of this amplification, but few are well-suited to planar manufacturing. In addition to this manufacturing difficulty, a large number of designs

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29

Choi, Jae Hyouk, and Kenichi Ohi. "Analytical Evaluation of Plastic Resistance of Column Base Connection Using Convex Set Theory." Key Engineering Materials 321-323 (October 2006): 386–89. http://dx.doi.org/10.4028/www.scientific.net/kem.321-323.386.

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It is important to estimate the structural safety of column base connection by calculating exact collapse loads. Column bases connection transfer reactions from the structure the foundation. In this paper, a simple mechanical model to predict their plastic resistance is proposed. An efficient linear-programming technique, which is called as Compact Procedure, is applied to column base connection model including multi-spring elements, where a column base is replaced by a set of plastic axial and bending springs. In Compact Procedure, it is not necessary to know the whole interaction surface of

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30

Palanichamy, Vimala, and N. B. Balamurugan. "Analytical modeling of quantization effects in surrounding-gate MOSFETs." COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering 33, no. 1/2 (2013): 630–44. http://dx.doi.org/10.1108/compel-03-2013-0101.

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Purpose – The purpose of this paper is to present an analytical model and simulation for cylindrical gate all around MOSFTEs including quantum effects. Design/methodology/approach – To incorporating the impact of quantum effects, the authors have used variational method for solving the Poisson and Schrodinger equations. The accuracy of the results obtained using this model is verified by comparing them with simulation results. Findings – This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is

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31

Avery, Philip, and Mahen Mahendran. "Analytical Benchmark Solutions for Steel Frame Structures Subject to Local Buckling Effects." Advances in Structural Engineering 3, no. 3 (2000): 215–29. http://dx.doi.org/10.1260/1369433001502157.

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Application of “advanced analysis” methods suitable for non-linear analysis and design of steel frame structures permits direct and accurate determination of ultimate system strengths, without resort to simplified elastic methods of analysis and semi-empirical specification equations. However, the application of advanced analysis methods has previously been restricted to steel frames comprising only compact sections that are not influenced by the effects of local buckling. A research project has been conducted with the aim of developing concentrated plasticity methods suitable for practical ad

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32

Seon, Kim, Kim, and Jeon. "Analytical Current-Voltage Model for Gate-All-Around Transistor with Poly-Crystalline Silicon Channel." Electronics 8, no. 9 (2019): 988. http://dx.doi.org/10.3390/electronics8090988.

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Poly-crystalline silicon channel transistors have been used as a display TFT for a long time and have recently been used in a 3D vertical NAND Flash which is a transistor with 2D plane NAND upright. In addition, multi-gate transistors such as FinFETs and a gate-all-around (GAA) structure has been used to suppress the short-channel effects for logic/analog and memory applications. Compact models for poly-crystalline silicon (poly-silicon) channel planar TFTs and single crystalline silicon channel GAA MOSFETs have been developed separately, however, there are few models consider these two physic

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33

Guo, Jingrui, Ying Zhao, Guanhua Yang, et al. "Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT." IEEE Transactions on Electron Devices 68, no. 4 (2021): 2049–55. http://dx.doi.org/10.1109/ted.2021.3054359.

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34

Ashouri, Mahyar, and Majid Bahrami. "Heat and mass transfer in laminar falling film absorption: A compact analytical model." International Journal of Heat and Mass Transfer 188 (June 2022): 122598. http://dx.doi.org/10.1016/j.ijheatmasstransfer.2022.122598.

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35

Darbandy, Ghader, François Lime, Antonio Cerdeira, Magali Estrada, Salvador Ivan Garduño, and Benjamin Iñiguez. "Gate leakage current partitioning in nanoscale double gate MOSFETs, using compact analytical model." Solid-State Electronics 75 (September 2012): 22–27. http://dx.doi.org/10.1016/j.sse.2012.05.006.

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36

Numata, Tatsuhiro, Shigeyasu Uno, Kazuo Nakazato, Yoshinari Kamakura, and Nobuya Mori. "Analytical Compact Model of Ballistic Cylindrical Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor." Japanese Journal of Applied Physics 49, no. 4 (2010): 04DN05. http://dx.doi.org/10.1143/jjap.49.04dn05.

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37

Estevez-Delgado, Joaquin, Gabino Estevez-Delgado, Noel Enrique Rodríguez Maya, José Martínez Peña, and Modesto Pineda Duran. "An isotropic analytical model for charged stars." Modern Physics Letters A 36, no. 13 (2021): 2150089. http://dx.doi.org/10.1142/s0217732321500899.

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In this investigation report, we present a perfect charged fluid solution for a static and spherically symmetric spacetime; for its construction, we suppose a metric potential, [Formula: see text], and a specific form of the electric field’s intensity, [Formula: see text], in such a manner that the resulting stellar model is physically acceptable and stable. The model presented depends on two parameters [Formula: see text] related to the compactness and the magnitude of the electric field and these same parameters will generate different possibilities for the behavior of the speed of sound. Fo

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38

Saqib, Muhammad, Shahid Hasnain, Abdul Khaliq, Uzair Ahmed, Nawal Odah Al-Atawi, and Daoud Suleiman Mashat. "Novel 3D coupled convection–diffusion model algorithm." AIP Advances 12, no. 10 (2022): 105324. http://dx.doi.org/10.1063/5.0112488.

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The potential of a partial differential equations model is to anticipate its computational behavior. The simulation of a transient 3D coupled convection–diffusion system using a numerical model is described. The main objective of this article is to offer effective limited contrast compact finite difference techniques for use with nonlinear coupled partial differential systems that mimic overseeing differential frameworks. The three-dimensional compact finite difference formulation serves as the model’s foundation. An analytical model has been used to validate finite difference techniques that

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39

Ahmad, Masniezam, Khairul Azwan Ismail, Fauziah Mat, and William James Stronge. "Improved Model for Impact of Viscoplastic Bodies." Key Engineering Materials 715 (September 2016): 180–85. http://dx.doi.org/10.4028/www.scientific.net/kem.715.180.

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This study proposes an improved viscoplastic impact model that calculates impact response for direct impact between two compact bodies. The proposed model employs spring and viscous elements that represent the energy loss due to plastic deformation and stress wave propagation, respectively. The impact response is calculated by solving differential equations through analytical and numerical methods. This model can accurately predict impact response for low, moderate and high impact speeds.

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40

A Hamid, Fatimah K., N. Ezaila Alias, R. Ismail, and M. Anas Razali. "Compact modeling of strained GAA SiNW." Indonesian Journal of Electrical Engineering and Computer Science 14, no. 1 (2019): 241. http://dx.doi.org/10.11591/ijeecs.v14.i1.pp241-249.

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<span>Strain-based on advanced MOSFET is a promising candidate for the future of CMOS technology. A numerical model is not favorable compared to a compact model because it cannot be integrated into most simulator software. Thus, a compact model is proposed to overcome the shortcomings in the analytical model. In this paper, a charge-based compact model is presented for long-channel strained Gate-All-Around Silicon Nanowire (GAA SiNW) from an undoped channel to a doped body. The model derivation is based on an inversion charge which has been solved explicitly using the smoothing function.

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41

Chen, J. S., C. P. Liang, C. W. Liu, and L. Y. Li. "A parsimonious analytical model for simulating multispecies plume migration." Hydrology and Earth System Sciences Discussions 12, no. 9 (2015): 8675–726. http://dx.doi.org/10.5194/hessd-12-8675-2015.

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Abstract. A parsimonious analytical model for rapidly predicting the long-term plume behavior of decaying contaminant such as radionuclide and dissolved chlorinated solvent is presented in this study. Generalized analytical solutions in compact format are derived for the two-dimensional advection-dispersion equations coupled with sequential first-order decay reactions involving an arbitrary number of species in groundwater system. The solution techniques involve the sequential applications of the Laplace, finite Fourier cosine, and generalized integral transforms to reduce the coupled partial

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42

Botas, J. D., and H. Águas. "The Stiffness of Syntactic Metal-Matrix Composites: A Statistical Model." ISRN Ceramics 2011 (February 6, 2011): 1–9. http://dx.doi.org/10.5402/2011/510474.

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Анотація:

Stiffness estimates of unloaded isotropic particulates are made by a new analytical model, when reinforcements are either compact or hollow spheres. A statistical extension of this model is described when stiffness predictions involve loading of syntactic composites. A simple experimental routine is also proposed for monitoring the microballoons fracture upon brittle syntactic metal-matrix composites tensile loading.

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43

Mavredakis, Nikolaos, Ramon Garcia Cortadella, Xavi Illa, et al. "Bias dependent variability of low-frequency noise in single-layer graphene FETs." Nanoscale Advances 2, no. 11 (2020): 5450–60. http://dx.doi.org/10.1039/d0na00632g.

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44

Chen, Jui-Sheng, Ching-Ping Liang, Chen-Wuing Liu, and Loretta Y. Li. "An analytical model for simulating two-dimensional multispecies plume migration." Hydrology and Earth System Sciences 20, no. 2 (2016): 733–53. http://dx.doi.org/10.5194/hess-20-733-2016.

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Abstract. The two-dimensional advection-dispersion equations coupled with sequential first-order decay reactions involving arbitrary number of species in groundwater system is considered to predict the two-dimensional plume behavior of decaying contaminant such as radionuclide and dissolved chlorinated solvent. Generalized analytical solutions in compact format are derived through the sequential application of the Laplace, finite Fourier cosine, and generalized integral transform to reduce the coupled partial differential equation system to a set of linear algebraic equations. The system of al

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45

Huet, Maxime, and Alexis Giauque. "A nonlinear model for indirect combustion noise through a compact nozzle." Journal of Fluid Mechanics 733 (September 23, 2013): 268–301. http://dx.doi.org/10.1017/jfm.2013.442.

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AbstractThe present paper deals with the generation of sound by the passage of acoustic or entropy perturbations through a nozzle in the nonlinear regime and in the low-frequency limit. The analytical model of Marble and Candel for compact nozzles (J. Sound Vib., vol. 55, 1977, pp. 225–243), initially developed for excitations in the linear regime, is rederived and extended to the nonlinear domain. Full nonlinear and second-order models are written for both subcritical and supercritical nozzles in the absence of shock and a detailed methodology is provided for the resolution of the second-orde

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46

Chiang Te-Kuang. "A Compact Analytical Threshold-Voltage Model for Surrounding-Gate MOSFETs With Interface Trapped Charges." IEEE Electron Device Letters 31, no. 8 (2010): 788–90. http://dx.doi.org/10.1109/led.2010.2051317.

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47

Bazigos, A., F. Krummenacher, J. M. Sallese, et al. "A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET." IEEE Transactions on Electron Devices 58, no. 6 (2011): 1710–21. http://dx.doi.org/10.1109/ted.2011.2119487.

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Weidemann, Michaela, Alexander Kloes, and Benjamin Iñiguez. "Compact model of output conductance in nanoscale bulk MOSFET based on 2D analytical calculations." Solid-State Electronics 52, no. 11 (2008): 1722–29. http://dx.doi.org/10.1016/j.sse.2008.06.043.

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Jain, Amit, Basanta Singh Nameriakpam, and Subir Kumar Sarkar. "A new compact analytical model of single electron transistor for hybrid SET–MOS circuits." Solid-State Electronics 104 (February 2015): 90–95. http://dx.doi.org/10.1016/j.sse.2014.11.019.

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Smaani, Billel, Samir Labiod, Fares Nafa, Mohamed Salah Benlatreche, and Saida Latreche. "Analytical Drain-Current Model and Surface-Potential Calculation for Junctionless Cylindrical Surrounding-Gate MOSFETs." International Journal of Circuits, Systems and Signal Processing 15 (October 25, 2021): 1585–90. http://dx.doi.org/10.46300/9106.2021.15.170.

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Анотація:

In this paper, we propose an analytical drain-current model for long-channel junctionless (JL) cylindrical surrounding-gate MOSFET (SRG MOSFET). It is based on surface-potential solutions obtained from Poisson’s equation using some approximations and separate conditions. Furthermore, analytical compact expressions of the drain-current have been derived for deep depletion, partial depletion, and accumulation mode. The confrontation of the model with TCAD simulation results, performed with Silvaco Software, proves the validity and the accuracy of the developed model

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