Готові списки джерел за темами / Conductive thermal diode

Добірка наукової літератури з теми "Conductive thermal diode"

Автор: Grafiati

Опубліковано: 13 липня 2022

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Статті в журналах з теми "Conductive thermal diode":

Kasali, Suraju Olawale, Jose Ordonez-Miranda, Kamal Alaili, and Karl Joulain. "Spherical and cylindrical conductive thermal diodes based on two phase-change materials." Zeitschrift für Naturforschung A 77, no. 2 (October 22, 2021): 181–90. http://dx.doi.org/10.1515/zna-2021-0170.

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Abstract We theoretically studied and optimized the thermal rectification of spherical and cylindrical conductive thermal diodes operating with two phase-change materials (PCMs), whose thermal conductivities significantly changes in a narrow interval of temperatures. This is done by deriving simple analytical expressions for the heat flows, temperature profiles and rectification factors of both diodes. It is shown that diode geometry has a significant impact on the heat flows and temperature profiles, but not so much on the thermal diode rectification factor. Optimal rectification factors of 63.5 and 63.2% are obtained for the spherical and cylindrical thermal diodes operating between the terminals of VO2 and polyethylene with a temperature difference of 150 K spanning the metal–insulator transition of both PCMs. These similar rectification factors could be enhanced even more with a phase-change material exhibiting higher contrast thermal conductivity than the ones in the present study. The obtained results can thus be useful to guide the development of PCMs capable of optimizing the rectification of conductive heat flows with different geometries.

Kasali, Suraju Olawale, Jose Ordonez-Miranda, and Karl Joulain. "Conductive thermal diode based on two phase-change materials." International Journal of Thermal Sciences 153 (July 2020): 106393. http://dx.doi.org/10.1016/j.ijthermalsci.2020.106393.

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Lee, Dong Kyu, Yu-Jung Cha, and Joon Seop Kwak. "Effect of Thermal Interface Materials on Heat Dissipation of Light-Emitting Diode Headlamps with Thermally-Conductive Plastics." Journal of Nanoscience and Nanotechnology 21, no. 7 (July 1, 2021): 3721–28. http://dx.doi.org/10.1166/jnn.2021.19218.

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We study the effect of thermal interface material such as thermal-conductive plastic on the dissipation of generated heat from the light-emitting diodes (LEDs) based headlamp for the application of environment-friendly green energy in vehicles. The thermal distribution and the performances of thermal-conductive plastic with heatsink are consistently investigated by using experimental and numerical results. Various thicknesses of thermal-conductive plastics from 0.3 mm to 1.0 mm used in this research work. Basically the thermal-conductive plastic reduces the thermal interface resistance between the contact of two solid surfaces. As a result, High electrical power of about 15 W (1 A and 15 V) can be possible for applying to the high-power LED package without any damage. The soldering temperature of LED package without thermal-conductive plastic shows approximately 138.7 °C which is higher compared to the LED package with thermal-conductive plastic (124.3 °C). On the other hand, the soldering temperature increases from 124.3 to 127.6 °C with increasing the thicknesses of thermal-conductive plastic. In addition, the soldering temperature decreases from 138.7 to 124.3 °C with increasing the thermal conductivities of thermal-conductive plastic. Finally, a highly thermal conductive property of thermal-conductive plastic will propose for optimum dissipation of generated heat from the LEDs-based headlamp. We also successfully estimate the junction temperature of packaged LEDs by using soldering temperature.

Ordonez-Miranda, Jose, James M. Hill, Karl Joulain, Younès Ezzahri, and Jérémie Drevillon. "Conductive thermal diode based on the thermal hysteresis of VO2 and nitinol." Journal of Applied Physics 123, no. 8 (February 28, 2018): 085102. http://dx.doi.org/10.1063/1.5019854.

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Mou, Yun, Jiaxin Liu, Qing Wang, Zhenyu Lei, Yang Peng, and Mingxiang Chen. "A novel thermal conductive Ag2O paste for thermal management of light-emitting diode." Materials Letters 316 (June 2022): 132022. http://dx.doi.org/10.1016/j.matlet.2022.132022.

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Alander, Tapani M., Pekka A. Heino, and Eero O. Ristolainen. "Analysis of Substrates for Single Emitter Laser Diodes." Journal of Electronic Packaging 125, no. 3 (September 1, 2003): 313–18. http://dx.doi.org/10.1115/1.1527657.

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Electrically conductive substrates (i.e., metals) are often used in the mounting of semiconductor laser diodes. While metals offer a good electrical and thermal performance, they restrict the system integration due to lack of signal routing capability. Since the implementations utilizing laser diodes have become more common, the integration level has also become an important factor in these products. Mounting of lasers on insulative substrates is the key to large-scale integration. Organic boards form the de facto standard of insulative substrates; however, their use with lasers is impossible due to low thermal conductivity. Ceramics, however, offer nearly the same thermal performance as metals but as electrically insulative materials also provide the foundation for high integration levels. In this study the effects of three different ceramic substrates on the stresses within diode lasers was evaluated. Finite element method was used to calculate the mounting induced straining and the thermal performance of the substrate. The same procedure was employed to examine the optimum metallization thickness for the ceramic substrates. The results present how greatly the substrate material can affect the very delicate laser diode. The ceramic substrates, though having nearly the same properties, exhibited clearly distinctive behavior and a great difference in thermal and mechanical performance.

Ali, Zulfiqar, Yuan Gao, Bo Tang, Xinfeng Wu, Ying Wang, Maohua Li, Xiao Hou, Linhong Li, Nan Jiang, and Jinhong Yu. "Preparation, Properties and Mechanisms of Carbon Fiber/Polymer Composites for Thermal Management Applications." Polymers 13, no. 1 (January 5, 2021): 169. http://dx.doi.org/10.3390/polym13010169.

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With the increasing integration and miniaturization of electronic devices, heat dissipation has become a major challenge. The traditional printed polymer circuit board can no longer meet the heat dissipation demands of microelectronic equipment. If the heat cannot be removed quickly and effectively, the efficiency of the devices will be decreased and their lifetime will be shortened. In addition, the development of the aerospace, automobiles, light emitting diode (LED{ TA \1 “LED; lightemitting diode” \s “LED” \c 1 }) and energy harvesting and conversion has gradually increased the demand for low-density and high thermal conductive materials. In recent years, carbon fiber (CF{ TA \1 “CF; carbon fiber” \c 1 }) has been widely used for the preparation of polymer composites due to its good mechanical property and ultra-high thermal conductivity. CF materials easily form thermal conduction paths through polymer composites to improve the thermal conductivity. This paper describes the research progress, thermal conductivity mechanisms, preparation methods, factors influencing thermal conductivity and provides relevant suggestions for the development of CF composites for thermal management.

Zhou, Jieyang, Zhe Wang, and Yun Wang. "Experimental Measurement of Thermal Conductivities in a Thin Heterogeneous Structure of Thermal Diodes." E3S Web of Conferences 194 (2020): 01019. http://dx.doi.org/10.1051/e3sconf/202019401019.

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Thermal diode has a wide application in the field of thermal management and thermal control. This article reports experimental results about measurement of the thermal conductivities of a novel thin layer (the thickness is about 0.3mm) for thermal diode applications. The layer consists printing paper, nylon mesh and liquid water, which are sealed between two pieces of aluminum, thus has a heterogeneity sublayers structure. It is shown that the thermal conductances are different in the two opposite through-plane directions. At 75 ˚C, the thermal conductivity is 0.457 W/mK in the conductive direction, more than 3 times larger than that in the opposite direction (0.133 W/mK). This phenomenon is due to the one-direction flow of working fluid. The thermal performance is dependent on the operating temperature and liquid water content in the structure.

Huang, Yao, Semen Kormakov, Xiaoxiang He, Xiaolong Gao, Xiuting Zheng, Ying Liu, Jingyao Sun, and Daming Wu. "Conductive Polymer Composites from Renewable Resources: An Overview of Preparation, Properties, and Applications." Polymers 11, no. 2 (January 22, 2019): 187. http://dx.doi.org/10.3390/polym11020187.

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This article reviews recent advances in conductive polymer composites from renewable resources, and introduces a number of potential applications for this material class. In order to overcome disadvantages such as poor mechanical properties of polymers from renewable resources, and give renewable polymer composites better electrical and thermal conductive properties, various filling contents and matrix polymers have been developed over the last decade. These natural or reusable filling contents, polymers, and their composites are expected to greatly reduce the tremendous pressure of industrial development on the natural environment while offering acceptable conductive properties. The unique characteristics, such as electrical/thermal conductivity, mechanical strength, biodegradability and recyclability of renewable conductive polymer composites has enabled them to be implemented in many novel and exciting applications including chemical sensors, light-emitting diode, batteries, fuel cells, heat exchangers, biosensors etc. In this article, the progress of conductive composites from natural or reusable filling contents and polymer matrices, including (1) natural polymers, such as starch and cellulose, (2) conductive filler, and (3) preparation approaches, are described, with an emphasis on potential applications of these bio-based conductive polymer composites. Moreover, several commonly-used and innovative methods for the preparation of conductive polymer composites are also introduced and compared systematically.

SOZONOV, Maxim V., Alexander N. BUSYGIN, Andrey N. BOBYLEV, and Anatolii A. KISLITSYN. "THERMOPHYSICAL MODEL OF A MEMRISTOR-DIODE MICROCHIP." Tyumen State University Herald. Physical and Mathematical Modeling. Oil, Gas, Energy 7, no. 4 (2021): 62–78. http://dx.doi.org/10.21684/2411-7978-2021-7-4-62-78.

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The most popular models of memristor, based on the principle of formation and breakage of conductive filaments in memristive layer, are applied to consideration of a single memristor. However, consideration of a full-fledged microchip with many memristors may be also interesting. In this case, it is very important to determine the thermal mode of work of the device, in particular, to determine if it needs cooling and how the microchip architecture affects on the nature of heat transfer. At the same time, the proposed model should be quite simple, since modeling of conductive filaments in each memristor greatly complicates work with the model and requires large computational resources. In this paper a thermophysical model of the microchip based on a memristor-diode crossbar created at the REC “Nanotechnology” at Tyumen State University is presented. The model takes into account Joule heating and convective heat transfer. A feature of the model is a simplified determination of memristor state by the resistivity value of memristive layer from the data of the current-voltage characteristic of a real memristor sample. Simulation is carried out in the ANSYS software package. Within the framework of the model, self-consistent electrical and thermophysical problems are solved in a non-stationary setting. The temperature fields and graphs of the temperature versus time were obtained for various operating modes. The results obtained are in good agreement with similar data from other studies published in the literature. The model shows itself well in various operating modes, both in modes with memristor state switching process and without it. The presented model can be used at the design stage to take into account the features of the microchip architecture, which can significantly affect the thermal state of microchip operating modes.

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Дисертації з теми "Conductive thermal diode":

Kasali, Suraju Olawale. "Thermal diodes based on phase-change materials." Thesis, Poitiers, 2021. http://www.theses.fr/2021POIT2254.

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Nous étudions dans cette thèse la rectification thermique de diodes thermiques radiatives ou conductive constituées de matériaux à changement de phase.Cette thèse est divisée en trois parties. Dans les premières parties, nous modélisons comparativement les performances d’une diode thermique conductive sphérique et cylindrique constitués de VO2 présentant un transition de phase et des matériaux n’en présentant pas. Des expressions analytiques aux bornes des diodes sont dérivées. Des flux thermiques, des facteurs de rectifications ainsi que les profils de température à l’intérieur de la diode sont obtenus. Nos résul-tats montrent que les différentes géométries de diodes ont un impact significatif sur les profils de température et les flux thermiques, mais moins un sur les facteurs de rectification. Dans ce travail, nous avons obtenu des facteurs de rectification maximaux allant jusqu’à 20.8% et 20.7%, qui sont supérieurs à celui prédit pour une diode plane constituée de VO2. Nous montrons également que des facteurs de rectification similaires à ceux obtenus avec le VO2 dans les géométries sphériques et cylindriques peuvent être atteints avec des matériaux à changement de phase dont le contraste de conductivité est plus important que dans le cas du VO2. Dans la deuxième partie, nous étudions la rectification de diodes thermiques constituées de deux matériaux à changement de phase. Avec, l’idée de générer un facteur de redressement plus élevé que dans le cas d’une diode thermique conductive ne comprenant qu’un matériau à changement de phase unique. Là encore, le travail a conduit à l’établissement d’expressions explicites pour les profils de température, les flux thermiques et le facteur de rectification. Nous avons obtenu un facteur de rectification optimal de 60% avec une variation de température de 250 K couvrant les transitions métal-isolant des deux matériaux. Dans la troisième partie de notre travail, nous avons modélisé et optimisé la rectification thermique de diodes thermiques planes, cylindriques et sphériques radiatives à base de deux matériaux à changement de phase. Nous savons calculer et analyser les facteurs de rectification de ces trois diodes et obtenu les facteurs de rectification optimaux respectifs pour les trois géométries 82%, 86% et 90.5%. Nos résultats montrent que la géométrie sphérique est la meilleure pour optimiser la rectification des courants thermiques radiatifs. De plus, des facteurs de rectification potentiellement supérieurs à ceux prédits ici peuvent être réalisés en utilisant deux matériaux à changement de phase avec des contrastes d’émissivités plus élevés que ceux proposés ici. Ces résultats analytiques et graphiques fournissent un guide utile pour optimiser les facteurs de rectification des diodes thermiques conductives et radiatifs basées sur des matériaux à changement de phase de géométries différentes
The thermal rectification of conductive and radiative thermal diodes based on phase-change materials, whose thermal conductivities and effective emissivities significant change within a narrow range of temperatures, is theoretically studied and optimized in different geometries. This thesis is divided into three parts. In the first part, we comparatively model the performance of a spherical and cylindrical conductive thermal diodes operating with vanadium dioxide (VO2) and non-phase-change materials, and derive analytical expressions for the heat flows, temperature profiles and optimal rectification factors for both diodes. Our results show that different diode geometries have a significant impact on the temperature profiles and heat flows, but less one on the rectification factors. We obtain maximum rectification factors of up to 20.8% and 20.7%, which are higher than the one predicted for a plane diode based on VO2. In addition, it is shown that higher rectification factors could be generated by using materials whose thermal conductivity contrast is higher than that of VO2. In the second part, on the other hand, we theoretically study the thermal rectification of a conductive thermal diode based on the combined effect of two phase-change materials. Herein, the idea is to generate rectification factors higher than that of a conductive thermal diode operating with a single phase-change material. This is achieved by deriving explicit expressions for the temperature profiles, heat fluxes and rectification factor. We obtain an optimal rectification factor of 60% with a temperature variation of 250 K spanning the metal-insulator transitions of VO2 and polyethylene. This enhancement of the rectification factor leads us to the third part of our work, where we model and optimize the thermal rectification of a plane, cylindrical and spherical radiative thermal diodes based on the utilization of two phase-change materials. We analyze the rectification factors of these three diodes and obtain the following optimal rectification factors of 82%, 86% and 90.5%, respectively. The spherical geometry is thus the best shape to optimize the rectification of radiative heat currents. In addition, potential rectification factors greater than the one predicted here can be realized by utilizing two phase-change materials with higher emissivities contrasts than the one proposed here. Our analytical and graphical results provide a useful guide for optimizing the rectification factors of conductive and radiative thermal diodes based on phase-change materials with different geometries

Law, Yik Chung. "Conductive, thermally stable and soluble side-chain copolymers for electroluminescent applications." HKBU Institutional Repository, 2009. http://repository.hkbu.edu.hk/etd_ra/982.

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Chen, Yi-Han, and 陳佾涵. "A new Hole Injection/Transport Materials of Hydro-Bonding system with Photocross-linked structure and an thermal crosslinking structure on Conducting Polymer for Application in Light-Emitting Diodes." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/79522781771262860656.

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碩士
國立交通大學
應用化學系碩博士班
101
A new process of HTLs made by poly(triphenylamine-carbazole-uracil) (PTC-U) has been successfully constructed. In this study, the new method for solution process of PTC-U increase the solvent resistance of PTC-U and make the trilayer device to be 1.8 times higher than the commercial product PEDOT:PSS-based devices. Most of all, we still prove that physically cross-linked structure is important for HITM. In addition, we successfully synthesized a thermal-cross-linked HITM, poly(fluoren-carbazol-benzoxazine) (PFC-Bz) which has good thermal, electronic property. Moreover, PFC-Bz can undergo thermal-cross-liking at low temperature to enhance the resistance of solvent and not to destroy others structure.

Частини книг з теми "Conductive thermal diode":

Huang, Ji-Ping. "Temperature-Dependent Transformation Thermotics for Thermal Conduction: Switchable Cloak and Macroscopic Diode." In Theoretical Thermotics, 97–106. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-2301-4_9.

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Тези доповідей конференцій з теми "Conductive thermal diode":

Maniscalco, Nicholas I., and William P. King. "Electro-thermal microcantilever with integrated solid- state heater, conductive tip, and Schottky diode." In 2010 Ninth IEEE Sensors Conference (SENSORS 2010). IEEE, 2010. http://dx.doi.org/10.1109/icsens.2010.5690481.

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Kime, Kent, Chuck Reed, Joe Di Silvestro, Ruth Ruiz, Simon Keeton, and Gene P. Thome. "Mechanical/Plasma Decapsulation Method and Thermal Finite-Element Analysis Provide Explanation for SMB Zener Failures." In ISTFA 1998. ASM International, 1998. http://dx.doi.org/10.31399/asm.cp.istfa1998p0353.

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Abstract Failure analysis and finite-element analysis were used in conjunction to determine the cause of zener diode failures. A mechanical/plasma depot method was developed for the plastic-encapsulated SMB package and used to observe the presence of remelted extruded solder material on the die surface. That material provided a conductive path which manifested electrically as premature breakdown. Transient-thermal finite-element analysis was then used to show that a recent change of in-house surge test parameters could result in part temperatures during surge testing in excess of the solder melting temperature. These efforts lead to a respecification of the in-house surge test duration which resolved the problem.

Bandhauer, Todd M., and Taylor A. Bevis. "High Heat Flux Boiling Heat Transfer for Laser Diode Arrays." In ASME 2016 14th International Conference on Nanochannels, Microchannels, and Minichannels collocated with the ASME 2016 Heat Transfer Summer Conference and the ASME 2016 Fluids Engineering Division Summer Meeting. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/icnmm2016-7947.

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The principle limit for achieving higher brightness of laser diode arrays is thermal management. State of the art laser diodes generate heat at fluxes in excess of 1 kW cm−2 on a plane parallel to the light emitting edge. As the laser diode bars are packed closer together, it becomes increasingly difficult to remove large amounts of heat in the diminishing space between neighboring diode bars. Thermal management of these diode arrays using conduction and natural convection is practically impossible, and, therefore, some form of forced convective cooling must be utilized. Cooling large arrays of laser diodes using single-phase convection heat transfer has been investigated for more than two decades by multiple investigators. Unfortunately, either large fluid temperature increases or very high flow velocities must be utilized to reject heat to a single phase fluid, and the practical threshold for single phase convective cooling of laser diodes appears to have been reached. In contrast, liquid-vapor phase change heat transport can occur with a negligible increase in temperature and, due to a high enthalpy of vaporization, at comparatively low mass flow rates. However, there have been no prior investigations at the conditions required for high brightness edge emitting laser diode arrays: >1 kW cm−2 and >10 kW cm−3. In the current investigation, flow boiling heat transfer at heat fluxes up to 1.1 kW cm−2 was studied in a microchannel heat sink with plurality of very small channels (45 × 200 microns) using R134a as the phase change fluid. The high aspect ratio channels (4.4:1) were manufactured using MEMS fabrication techniques, which yielded a large heat transfer surface area to volume ratio in the vicinity of the laser diode. To characterize the heat transfer performance, a test facility was constructed that enabled testing over a range of fluid saturation temperatures (15°C to 25°C). Due to the very small geometric features, significant heat spreading was observed, necessitating numerical methods to determine the average heat transfer coefficient from test data. This technique is crucial to accurately calculate the heat transfer coefficients for the current investigation, and it is shown that the analytical approach used by many previous investigations requires assumptions that are inadequate for the very small dimensions and heat fluxes observed in the present study. During the tests, the calculated outlet vapor quality exceeded 0.6 and the base heat flux reached a maximum of 1.1 kW cm−2. The resulting experimental heat transfer coefficients are found to be as large a 58.1 kW m−2 K−1 with an average uncertainty of ±11.1%, which includes uncertainty from all measured and calculated values, required assumptions, and geometric discretization error from meshing.

Ito, Satoru, and Yuji Suzuki. "High Speed Transient Temperature Profile Control Using Adjoint-Based Optimal Control Scheme." In ASME/JSME 2011 8th Thermal Engineering Joint Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/ajtec2011-44574.

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Optimal control scheme for transient temperature profile inside electronic devices such as pulsed laser diode is developed based on the adjoint equation of one-dimensional heat conduction. Joule heating with a thin-film heater is employed as the control input in order to minimize temperature changes of a thin active layer embedded in a modeled laser diode. In numerical simulations assuming the light-emitting time period of 1 μs, temperature variation of the active layer is successfully suppressed by 80% with the heat input prior to the onset of the laser pulse. It is found that the Fourier number of the layer between the control heater and the active layer is the key parameter to minimize the temperature fluctuations. We also successfully demonstrate suppression of the temperature change in a MEMS-based experimental setup.

Refai-Ahmed, Gamal, and Stephanie Trottier. "Thermal Behavior of Next Generation of Raman Pump Lasers in Telco Equipment." In ASME 2003 International Electronic Packaging Technical Conference and Exhibition. ASMEDC, 2003. http://dx.doi.org/10.1115/ipack2003-35129.

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The present investigation concluded that the thermal behavior of the laser diode can be numerically modeled using the parabolic transient conduction equation. In addition, the current study compared the thermal performance of the continuous wave pump lasers versus the modulated wave pump lasers. This comparison revealed that the temperature of the modulated wave pump laser can approach the temperature of the continuous wave pump laser with the same average power dissipation when the frequency approaches infinity. Finally, the resulting thermal behavior was correlated and expressed in an empirical form, which physically described the thermal performance of the modulating pump laser.

Lorenzen, Dirk, and Petra Hennig. "Highly thermally conductive substrates with adjustable CTE for diode laser bar packaging." In Photonics Fabrication Europe, edited by Uwe F. W. Behringer, Bernard Courtois, Ali M. Khounsary, and Deepak G. Uttamchandani. SPIE, 2003. http://dx.doi.org/10.1117/12.468639.

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Zhang, Pu, Xingsheng Liu, Qiwen Zhu, and Jingwei Wang. "Thermal characteristics of compact conduction-cooled high power diode laser array packages." In SPIE LASE, edited by Alexei L. Glebov and Paul O. Leisher. SPIE, 2017. http://dx.doi.org/10.1117/12.2250258.

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Lippmann, Wolfgang, Marion Herrmann, Carmen Hille, and Antonio Hurtado. "Laser Joining of Ceramics: A Contribution to High Temperature Range Application of Ceramic Components." In 16th International Conference on Nuclear Engineering. ASMEDC, 2008. http://dx.doi.org/10.1115/icone16-48409.

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Non-oxide ceramics, such as silicon carbide (SiC) and silicon nitride (Si3N4), have excellent properties that make the materials interesting for application also in the nuclear sector. Due to their exceptional resistance to high temperatures, aggressive and abrasive media as well as nuclear radiation, the materials seem to be particularly suitable for developments in such fields as high-temperature reactors ((V)HTR) and peripheral systems (e.g. for hydrogen production). To simplify and thus to enable the technical application of these high-tech ceramics, the Dresden University of Technology has developed a laser beam joining process. This opens up many possibilities, e.g., to encase HTR fuel elements (as well as spheres and composites) in SiC, to encapsulate highly radioactive waste in SiC or to build a highly efficient heat transformer using high-temperature energy from VHT reactors. The progress made in laser beam technology in the last few years is a major element that has contributed to the developments achieved to date. Research has been focused mainly on the following three areas: (1) optimization of the laser parameters in combination with the advancement of oxide brazing fillers, (2) transfer of the basic technology to other high-tech ceramics like oxide ceramics, and (3) application of the laser process to develop electrically conductive joints. The possibility to laser join also Al2O3 and ZrO2 ceramics has created the opportunity to produce full ceramic sensors for (V)HTR specific applications at low cost. This requires adaptation of laser technology to the special properties of oxide ceramics. These are markedly less resistant to thermally induced stress than non-oxide ceramics, placing high requirements on laser process control. Another peculiarity is the property of oxide ceramics to be partly transparent to the laser wavelengths emitted by diode lasers (808 nm and 940 nm), with the result that the ceramic material is not heated primarily at the surface but inside its volume. This produces joint seams inside ceramic components even without any excessive thermal stress. The R&D work has made it possible to produce novel sensors for the high-temperature range that are also highly resistant to aggressive media. It is considered a further advantage that this joining technology has no special requirements regarding the process atmosphere such as vacuum or inert gas, which ensures that the process lends itself well to automation.

Klocke, Fritz, Axel Demmer, and A. Zaboklicki. "Use of high-power diode lasers for hardening and thermal conduction welding of metals." In Lasers and Optics in Manufacturing III, edited by Leo H. J. F. Beckmann. SPIE, 1997. http://dx.doi.org/10.1117/12.281121.

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Su, Zonghui, Jonathan A. Malen, Jacob H. Melby, and Robert F. Davis. "Thermal Transport in LEDs for Solid State Lighting." In ASME/JSME 2011 8th Thermal Engineering Joint Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/ajtec2011-44107.

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Over 20% of electricity in US is used by lighting. Solid state lighting (SSL) efficiency can theoretically surpass that of incandescent and fluorescent lighting techniques. Nonetheless SSL efficiency is greatly reduced at high temperatures that result from inadequate heat dissipation. SSL requires blue and green light emitting diodes (LEDs) made from Gallium Nitride (GaN) and Indium Gallium Nitride (InGaN) to eventually generate white light. Using an infrared thermal imaging camera, temperatures of working blue and green LEDs with different efficiencies were measured. The results show that higher efficiency LEDs have lower active region temperatures when driven with the same power. Further, they motivate our study of thermal properties of the individual thin films that compose the LEDs, since earlier studies show that conduction is the primary dissipative mechanism for heat in LEDs. Bulk thermal properties are poor estimates of thin film properties due to increased boundary and defect scattering of phonons in the films. By examining real LED structures with the 3-omega technique, thin film thermal conductivities can be measured. For this technique, a thin metal line was fabricated onto a smooth dielectric sample surface. This thin metal line works as both a heater and a thermometer. Benchmark studies on Pyrex 7740 were used to validate our 3-omega setup. Data from real GaN/InGaN LED structures show that the effective thermal conductivities of the AlN buffer layer and multi-quantum-well active region are substantially suppressed relative to their anticipated values based on bulk properties.