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Дисертації з теми "CuInGaSe"

Автор: Grafiati

Опубліковано: 30 травня 2022

Оновлено: 31 липня 2025

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1

Натарова, Ю. В., та О. Б. Галат. "Исследование фотоэлектрического преобразователя на основе CuInGaSe". Thesis, Сумський державний університет, 2018. http://openarchive.nure.ua/handle/document/9010.

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Целью данной работы является исследование наиболее эффективных фоточувствительных материалов, сравнение их характеристик; расчёт поглощательной способности и выбор оптимального материала и размеров фотопреобразователя для эффективного преобразования энергии.

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2

Галат, А. Б., та Ю. В. Натарова. "Исследование фотоэлектрического преобразователя на основе CuInGaSe". Thesis, Сумський державний університет, 2018. http://essuir.sumdu.edu.ua/handle/123456789/67886.

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Целью данной работы является исследование наиболее эффективных фоточувствительных материалов, сравнение их характеристик; расчёт поглощательной способности и выбор оптимального материала и размеров фотопреобразователя для эффективного преобразования энергии.

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3

Tolan, Gavin James. "Electro-chemical development of CuInGaSe2-based photovoltaic solar cells." Thesis, Sheffield Hallam University, 2008. http://shura.shu.ac.uk/20444/.

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The aim of this work was to make low cost, high efficiency, graded bandgap, thin film CuInGaSe2 solar cells by electrodeposition, using novel device designs proposed by Dharmadasa et al. These new designs were first experimentally tested using well researched GaAs and AlxGa(1-x)As materials grown using MOCVD, these ideas were then transferred to electrodeposited CuInGaSe2.New designs of graded bandgap solar cells based on p-type window materials, using the well researched GaAs and AlxGa(1-x)As alloy system, have been experimentally tested. The size of the cell was gradually scaled up from 0.5

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4

Xu, Yan. "Fabrication et caractérisation des films CuInGase2 par pulvérisation cathodique : étude des défauts par la spectroscopie des pièges profonds par la charge." Nantes, 2014. http://archive.bu.univ-nantes.fr/pollux/show.action?id=832d9b8a-0f75-4de7-ab4a-836b5de21036.

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Dans ce travail, nous nous intéressons aux défauts qui peuvent exister dans les couches minces de CIGS préparés par pulvérisation RF à partir d’une cible quaternaire. Pour réaliser les dispositifs, nous avons mis au point un protocole de dépôt à quatre étapes qui a permis d’obtenir des films minces de façon fiable. Malgré une disproportion des atomes dans le dépôt orignal, les analyses spectroscopiques montrent que les caractéristiques correspondent aux CuInGaSe2 sous forme de chalcopyrite. Ensuite, nous avons déterminé les caractéristiques courant-tension. Nous mesurons les paramètres des piè

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5

Peng, Li-Huei, and 彭立暉. "Formation of CuInGaSe 2 by eletrodeposition." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/85896487021470709214.

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碩士<br>雲林科技大學<br>材料科技研究所<br>98<br>In this study, the CuInGaSe 2 is prepared by electrodeposition. First of all, Cu is electrodeposited onto stainless steel and to find out the best condition to deposit Cu by changing different parameters. Second, Indium and Gallium were electrodeposited by using Orthogonal array of L 18 . Final, that the In/Cu/S.S. and In/Ga/Cu/S.S be selenized, and the selenized condition is heated at 500℃ for 1hour in Argon atmosphere. The CIGS should be characterized by XRD, FE-SEM and EDS. The results show the best parameters for the elec

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6

Chuang, Tsung-Yeh, and 莊宗曄. "Selenium treatment study of sputtered CuInGaSe thin film." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/29594841024252516071.

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碩士<br>國立高雄大學<br>電機工程學系碩士班<br>97<br>In this dissertation, we study the deposition of Copper Indium Gallium Selenium ( CIGS ) thin-film on glass substrate by sputtering with followed selenium heat treatment. Deposition parameters such as power, temperature and gas flow were studied. Following heat treatment parameters such as temperature and gases were studied also. Film morphology, concentration and mobility for these films were analyzed. With controlled parameters, p-type CIGS thin-films can be achieved and p-n diode were fabricated by deposition the CIGS film on n-type Si substrate. The curre

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7

Chiang, Min-Yi, and 江旻益. "Synthesis of CuInGaSe2, CuInSSe, CuInGaSSe nanocrystals and their application on thin film solar cell." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/65120142676117583406.

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8

Jha, Shian-fei, and 查顯飛. "The study of characteristics of CuInGaSe (CIGS) thin films by RF-sputtering on single target and the different selenizations on thin films." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/91578955307061688442.

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碩士<br>國立臺南大學<br>電機工程學系碩士班<br>100<br>CIGS thin film solar cells, has been recognized as one of the most promising absorber materials. For improving the absorber layer characteristics of solar cells, it is essential to followed selenization heat treatment process. The dissertation mainly uses Copper Indium Gallium Selenium (CIGS) single quaternary alloy target, which can simplify the process control. The power was kept at 100w and substrate temperature was 400 ℃ to deposit on the substrate, absorption precursor layer CIGS by RF-sputtering was obtained. By controlling different selenization heat

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9

Chen, Chiayin, and 陳佳吟. "Synthesis and Fabrication of CuInGaSe2." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/07637430984112246594.

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碩士<br>國立中正大學<br>光機電整合工程研究所<br>99<br>In this study, we carriered out the ink by solvothermal method. The selenide compounds and the nitrate compound of copper, indium, and gallium were dissolved in alcohol then mix them well as a precursor. Then add the appropriate bonding agent and dispersing agent for viscosity adjustment, so that it can be uniform and completely coating on the glass substrate. By using this method, we have fabricated thin film of copper indium gallium selenide successfully. And we found that as annealing temperature increases, the intensity of X-ray diffraction peak increase

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10

Hsu, Hung Ru, and 許弘儒. "A study of Ga distribution and grain growth in a high efficient CuInGaSe2 solar cell prepared in a sputtering process using a single CuInGa precursor." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/06157342137187098885.

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博士<br>國立清華大學<br>光電工程研究所<br>100<br>Chalcopyrite compounds of Cu(In,Ga)Se2 and related alloys are among the most promising materials for photovoltaic applications. Sputtering of Cu-In-Ga precursors followed by selenization has been a preferred industrial process for Cu(In,Ga)Se2 solar cell manufacturing. In a sputtering process, many studies using co-sputtering or sequential sputtering from CuGa and In magnetron targets for preparation of the metallic precursors. In this study, the metallic precursors were deposited by sputtering a single Cu-In-Ga ternary target and compared with the In/CuGa sto

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11

lin, minco, and 林明正. "The characteristic analysis of CuInGaSe2 thin film." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/31361017546198368057.

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碩士<br>中華技術學院<br>電子工程研究所碩士班<br>96<br>With global energy crisis, the rising of environmental awareness, surging of oil prices, and the signing of Kyoto Protocol, as well as the subsidized use of solar energy in the U.S. and EU, the adoption and the research of solar cells have become increasingly important. Experiment One – The objective of this thesis is to use DC Sputter to deposite copper indium gallium diselenide (also known as CIGS) thin film on plastics, P-SI and glass substrates. As a I-III-VI2 quaternary compound, CIGS possesses the advantages of high absorbance, low cost and easy proces

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12

Chien-ChihChen and 陳建志. "Fabrication of CuInGaSe2 solar cells by screen printing technique." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/63515184938391460390.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>101<br>In this study , using the CuInGaSe2 nano powder , KD1 dispersant and ethyl cellulose formulated into uniform slurry. Using the slurry fabricated CuInGaSe2 thin films by screen priting and Two-stage heat treatment completed p-CuInGaSe2.Advantages of screen printing are low equipment cost , easy fabrication , negligible waste of chemicals and possibility to deposit over large area. The disadvantages of the film are difficult to control the thickness and easy have carbon residue.The CdS thin film is fabricated by CBD method and use different sources of cadmi

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13

Pei, Jung Wei, and 裴靜偉. "Thin Film CuInGaS2 prepared by Reactive Magnetron Sputtering Method." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/85675958899154518793.

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14

Wen-FengChueh and 闕文峰. "A Study of Chemical Mechanical Polishing Process for CuInGaSe2 Thin Films." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/06181800810586264558.

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碩士<br>國立成功大學<br>電機工程學系碩士在職專班<br>102<br>In this dissertation, I sputtered Copper-Indium-Gallium metallic precursors on Mo-coated soda-lime glass substrates followed by high temperature selenization process to form the CuInGaSe2 (CIGS) absorber films. I used a novel chemical mechanical polishing process to improve the roughness or flatness of the CIGS absorber layer. Improved CIGS film roughness could benefit for better ZnS coverage and therefore better effective junction formation, which in term can improve the conversion efficiency of the CIGS solar cells. In this study, I found that Br2 conce

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15

Duan, Xi-Ming, and 段錫銘. "The Fabrication of CuInGaSe2 Solar Cells Prepared by Two Step Methods." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/4kjr85.

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碩士<br>國防大學理工學院<br>光電工程碩士班<br>102<br>The Characterization of copper-indium-gallium selenide absorbers is studied by two step preparation method. To uniformly control the metal composition, the precursor of copper-indium-gallium metal are stacked in sequence of Cu(300nm)/In(700nm)/Ga (300nm) by a thermal evaporator. The precursor was selenized by a furnace and Se powder in a closed tube. From EDS analysis, it is found that no gallium exists in the formation film. A thicker Ga metal is used to increase the Ga content. However, it is still no Ga content in the formation films. The reason may be at

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16

Chen, Yi-Ming, and 陳儀明. "Fabrication and Physical Properties of CuInGaSe2 and B-doped ZnO Thin Films." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/67437061542706976411.

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碩士<br>明新科技大學<br>電子工程研究所<br>99<br>The device structure of Cu(In,Ga)Se2 thin-film solar cells includes substrate, back contact, absorber layer, buffer layer, transparent conductive oxide (TCO) film, antireflection coating and front contact. The content of this research focuses on the preparation of absorber and TCO films and the investigation physical properties of the resultant films. The content of this research has two part, the first part studies the preparation of Cu(In,Ga)Se2 thin films, which was carried out by the pulsed laser deposition techniques. CuInGaSe2 films were deposited on vari

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17

Wu, Ming-Feng, and 吳明峰. "Preparation and Characterization of CuInGaSe2 Photovoltaic Thin Films by Non-vacuum Processes." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/bz75rg.

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碩士<br>國立虎尾科技大學<br>材料科學與綠色能源工程研究所在職專班<br>100<br>Cu (In, Ga) Se2 (CIGS) plays a very important role in the development of thin film solar cells. In this thesis, According to different proportions, we present a study on copper, indium, gallium, selenium to smelting Cu-rich ,Stoichiometric and Cu-poor of two alloying elements of CuInGaSe2 by non-vacuum process. The CuInGaSe2 slurry was prepared using ball milling. And the CuInGaSe2 slurry was printed onto a silicon substrate and glass substrate to form a precursor layer by spin coating, then rapid thermal annealing process within the RTA furnace.

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18

Jia-FengFang and 方嘉鋒. "Study of nano-structured ZnSe/CuInGaSe2 solar cells fabricated on transparent conductive substrate." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/33017837435494894445.

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19

Chen, Jian-Jhih, and 陳建志. "Preparation and analysis of ink-printed CuInGaSe2 solar cells by using different precursors." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/64882974669273656585.

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碩士<br>國立臺灣科技大學<br>材料科學與工程系<br>100<br>The non-vacuum processes for Cu(In,Ga)Se2(CIGSe) solar cells have gradually attracted the researches’ attentions. However, the major problem of the non-vacuum processes is the densification, grain size and the purity of the p-type absorption layer. In the study, CIGSe thin film solar cells were prepared by using ink-printing on alumina substrates. The p-type absorption layers were prepared with different precursor (CIGSe, CIGSe + 10 mol% Te, CIGSe + 5 mol% Sb2S3, and CIG and CIGZT cermets), followed by selenization with different Se sources and annealin

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20

Ming-ChenHung and 洪銘辰. "Reliability Studies of Mo Back-Contact with Embedded Silver Nanowires for Flexible CuInGaSe2 Solar Cells Applications." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/70883670515688026890.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>101<br>In this thesis, we investigated the strain-induced reliability of back-contact for electrode deposited on polyimide (PI) substrate for flexible CIGS solar cells applications, and we integrated the electrode with silver nanowires (NWs) to enhance the flexibility of the back-contact electrode. The thesis content can be divided into three subjects. The first one is the investigation of cracks induced by the internal strain resulting from the fabrication process and the method we used to fix cracks of the conventional Mo back-contact electrode. For the second

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21

鄭賢德. "Study on Characterizations of AZO Transparent Conducting Oxide Film and Its Application on CuInGaSe2 Solar Cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/13306314675295057624.

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碩士<br>明新科技大學<br>化學工程與材料科技研究所<br>100<br>Zinc oxide with low cost and high stability, but the carrier concentration in the film is not enough.. Hence, ZnO with different impurity dopants can be used to increase carrier concentration and conductivity. In this study, the electrical characteristics, crystallinity, and the position correlation between substrate and target position for the aluminum-doped zinc oxide (AZO) layer by sputtering with the different sputtering conditions (RF power, distance of target and substrate, process pressure, substrate temperature) were studied. The results indicate

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22

Wang, Mao-Chun, and 王懋竣. "Study on the fabrication and post-treatment of absorption layer for a CuInGaS2 thin film solar cell." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/31320568541499480598.

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碩士<br>崑山科技大學<br>機械工程研究所<br>99<br>CIGS solar cells show a considerable number of advantages among a number of thin-film photovoltaic materials. For example: the high absorption coefficient, high conversion efficiency, can absorb most wavelength sunlight. The fabrication process of CIGS is mostly done in a vacuum environment. The alloy thin-film of copper, indium and gallium is made by co-evaporating or sputtering, then this alloy thin film is annealed in sulfur vapor pressure to complete CIGS2 structure. Using 350W power can obtain the best uniformity for the copper gallium target, thus th

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23

Chen, Cheng-Hung, and 陳政宏. "The Study of Photoelectrochemical Performance of CuInGaS2 and CdS Semi conductor Thin Films Using Chemical Bath Deposition." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/s6v53e.

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碩士<br>國立臺北科技大學<br>化學工程研究所<br>97<br>The CuInGaS2, and CdS semi conduction thin films were grown on indium-tin-oxide coated glass substrates by using chemical bath deposition. The influences of various deposition parameters on structural, optical, electrical performances of films have been investigated. The thickness, band gaps and carrier densities of CuInGaS2 determined from transmittance spectra and electrochemical analysis are in the range of 200~700nm, 1.5eV, and 2.14×1015~4.5×1015 cm-3, respectively. The band gaps of CdS were 2.25eV .The flat band potentials of n-type CIS2,p-type CIGS2,and

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24

Lin, Bing-Yi, and 林秉誼. "Fabrication and analysis for zinc oxide nanorod anti-reflection layer on Cd-free CuInGaSe2 thin film solar cells." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/51127764831704090774.

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碩士<br>國立交通大學<br>照明與能源光電研究所<br>102<br>The Copper Indium Gallium Diselenide (CIGS) is the most promising material for solar cell application. Until now, the best conversion efficiency reaches 20.4% by EMPA, Swiss. However, the traditional buffer material is cadmium sulfide (CdS), the cadmium is toxic for environment. Thus the zinc sulfide (ZnS) was adopted for the alternative material for buffer layer in this thesis. On the other hand, the direct manner improved the conversion efficiency is application of anti-reflection layer. However, the traditional anti-reflection layer unable to reach broad

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25

Ho, Wei-Hao, and 何偉豪. "Utilization of CuInGa Ternary Alloy Target on CIGS Thin Films." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/dfs6yd.

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碩士<br>國立臺北科技大學<br>製造科技研究所<br>99<br>In this study, CIGS films were fabricated by selenization of single-sputtered CuInGa precursors using a CuInGa ternary alloy target. The effects of 2-stage and 4-stage selenization process on the CIGS thin films were investigated. SEM, XRD, EPMA and Hall meansurement were used to indentify the morphologies, micro-structures, compositions and electrical properties of the CIGS thin films. It was found that CuInGa precursors show Cu11(In,Ga)9 single phase with Cu/(In+Ga) ratio between 0.80-0.85, corresponding to the stoichiometric proportion of CuInGa target. As

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26

Hsiao, Sheng-Yu, and 蕭聖右. "Investigation on the properties of CuInGaSe2 films prepared by selenization of sputtered metallic Cu/In/Ga films using ditert-butylselenide." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/66528356602545561160.

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碩士<br>國立中興大學<br>物理學系所<br>99<br>CuInxGa1-xSe2 (CIGS) films were prepared on soda-lime glass (SLG) by a selenization process under atmospheric pressure using a new Se-containing precursor, ditert-butylselenide (DTBSe). Purified N2 was utilized to serve as carrier gas. The physical properties and surface morphologies of CIGS films were investigated by photoluminescence spectroscopy (PL), x-ray diffractometry (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), x-ray photoelectron spectroscopy (XPS) and Hall measurement. It was found that the multi-stage selenization pr

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27

Huang, Hsin-Wei, and 黃新偉. "A non-vacuum process for CuInGa(Se,S)2 thin film Solar cells." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/57745661429648301181.

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碩士<br>國立中央大學<br>光電科學研究所<br>98<br>CIGS is the material that has the best potential for the development of thin film solar cells. The 20.1% efficiency for CIGS is the new world record. However, the high vacuum processes needed for production are too expensive and thus not suitable for large scale production. The development of a non-vacuum process is necessary. In this work, we fabricate Cu(In,Ga)(S,Se)2 absorbers layers by a non-vacuum spray process without external selenization, and it took only 3 minutes to reach the chalcopyrite structure in the Rapid Thermal Annealing (RTA). Besides, w

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