Дисертації з теми "Dépôt par voie chimique"
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Berjonneau, Jérôme. "Mécanismes de dépôt par voie gazeuse de céramiques base Si-B-C." Bordeaux 1, 2006. http://www.theses.fr/2006BOR13146.
Khalil, Aziza. "Dépôt de cuivre par voie chimique : analyse électrochimique et application à la connectique en microélectronique." Grenoble INPG, 1995. http://www.theses.fr/1995INPG0042.
Joulaud, Mickaël. "Nouveaux schémas d'intégration pour les interconnexions cuivre inférieures à 90 nm : apport des dépôts chimiques : dépôt de cuivre par CVD comme couche d'accroche : dépôt de NiMo-P par voie chimique autocatalytique comme couche d'encapsulation." Paris 12, 2004. https://athena.u-pec.fr/primo-explore/search?query=any,exact,990003948120204611&vid=upec.
By scaling down microchips, critical issues with copper integration are expected for the future interconnect generation (65 nm). First, the conforrnal deposition of a thin copper film (seedlayer), necessary to initiate the copper plating, could not be obtained using the current PVD techniques. Second, holes are generated at the copper/capping interface due to electromigration. This thesis is focused on new processes based on chemical deposition techniques as J solutions to the presented limitations. The feasibility of copper seedlayer CVD with an industriai tool using (hfac)Cu(MHY) was demonstrated. By developing a specific recipe, a 50 nm conformai seedlayer was deposited in narrow features. The selective electroless deposition ofNiMo-P as a capping layer to limit electromigration was investigated. The influence of experimental parameters and barrier efficiency ofNiMo-P were evaluated. A selective deposit was obtained on 0,12 micron spacing lines with an alkali free deposition bath
Delettrez, Sophie. "Élaboration par voie gazeuse et caractérisation de céramiques alvéolaires base pyrocarbone ou carbure de silicium." Thesis, Bordeaux 1, 2008. http://www.theses.fr/2008BOR13723/document.
High porosity open cell carbon foams, resulting from the pyrolysis polymeric foams, have inadequate properties for structural applications such as shock absorbers or fuel cells. In this study, pyrocarbon (PyC derived from propane) and silicon carbide (SiC from CH3SiCl3/H2 mixtures) coatings were prepared by Chemical Vapour Deposition (CVD) and the experimental conditions were optimized to improve the properties of the foams. The mechanical, thermal and gas transport properties were respectively assessed by uniaxial crushing tests, flash diffusivity and gas permeability measurements. The physical properties vary significantly with the relative density. The CVD process allows the tailoring of the foam properties, for a specific application, through an accurate control of the structure, the composition, the thickness uniformity of the coatings and the relative density of the foams
Tartivel, Ronan. "Renforcement mécanique du verre : nouvelles compositions chimiques et dépôt de films minces élaborés par voie sol-gel." Rennes 1, 2007. http://www.theses.fr/2007REN1S183.
This work aims at improving mechanical resistance of glass. Two aspects of reinforcement have been studied. First, we focused on the research of new glassy compositions exhibiting high mechanical properties. The compositions were synthesized using an original home-made device. The mechanical characteristics were then determined, and an exploratory study of the structure was conducted in order to establish the role of the reticulation of the network. The second part deals with the mechanical reinforcement of the surface. Indeed, small defects existing on the surface often affect the strength of the whole piece of glass. To minimize this effect, we deposited inorganic thin films obtained via sol-gel process by a dip-coating method. This way, ordinary soda-lime silicate glass substrates were coated and then characterized both mechanically and morphologically, to determine the influence of thermal treatment, as well as composition, on mechanical properties
Vitiello, Julien. "Etude des matériaux diélectriques à très faible permittivité déposés par voie chimique en phase vapeur développés pour l'isolation des interconnexions cuivre des circuits intégrés pour les générations technologiques 45 nm et 32 nm." Lyon, INSA, 2006. http://theses.insa-lyon.fr/publication/2006ISAL0097/these.pdf.
The performance requirements for sub-65 nm generations imply the use of dielectric films with ultra low k-value in interconnects. With the introduction of copper, two dielectric films play a major role in the architecture: an insulator in between the metal lines and a dielectric barrier capping the top of these lines. For the 45 nm node, ultra low k-value insulators are obtained by introducing porosity into a SiOC matrix. These porous films are a true technological jump for the whole interconnect module integration. The dielectric barriers must also have a low k-value. To this purpose, the SiCN film, used for the 65 nm generation, must be replaced by a material showing the same barrier properties but less dense to satisfy the requirements in electric performances. The ultra low k-value insulator is based on a non porogen approach, called restructuring. The study of the process of deposit and the characteristics of film allow highlighting the physical phenomena at the origin of the graded structure in depth of the film. The mechanical properties were determined by nanoindentation, using a method based on multilayers. The improvement of the mechanical resistance of this porous film was obtained using a thermally assisted ultraviolet treatment. Its effectiveness depends on exposure duration and purge gas in the chamber. Moreover, the kinetics of cross-linking in the SiOC structure is related to the film density. Lastly, the feasibility of the integration of this film was evidenced. With regard to the dielectric barriers, two solutions for the 45 nm generation were evaluated: a plasma stabilized SiC layer and a SiCN bilayer. Their barrier efficiency was evaluated thanks to two methods developed in this study. That made it possible to qualify the performances of these new layers
Jakab, Sandrine. "Cinétique de précipitation par voie électrochimique et de dissolution de solides mixtes de type molybdates ou hydroxydes/oxydes de lanthanide : étude de gravimétrie." Paris 6, 2009. http://www.theses.fr/2009PA066774.
Diers, Mathieu. "Conception, étude et optimisation de nouvelles sources plasma à la résonance cyclotronique électronique. Application aux dépôts par voie chimique et par pulvérisation." Phd thesis, Université de Grenoble, 2010. http://tel.archives-ouvertes.fr/tel-00782845.
Liu, Chia-Erh. "Synthèse et caractérisation de nano-cristallites de TiO² à basse température : stabilisation de solutions colloïdales et dépôts par voie chimique." Nantes, 2008. http://www.theses.fr/2008NANT2049.
Ocampo, Moreno Maricela. "Étude de l'effet de l'introduction de l'acide silicotungstique sur les dépôts de CdS et CdTe déposés par voie chimique et électrochimique et de leurs propriétés physico-chimiques." Mémoire, Université de Sherbrooke, 2006. http://savoirs.usherbrooke.ca/handle/11143/4737.
Guillemin, Sophie. "Mécanismes de croissance de nanostructures de ZnO par voie chimie liquide et caractérisation avancée." Thesis, Lyon, INSA, 2014. http://www.theses.fr/2014ISAL0143/document.
ZnO nanowires are of strong interest in the realization of solar cells based on type-II band alignment. They can be grown by chemical bath deposition, a technique in which the substrate is seeded with ZnO nanoparticles by dip-coating and then placed in a precursor solution heated at 90°C for a couple of hours. In this document, we will discuss the nucleation and growth mechanisms associated with this low cost technique. In particular, we will see how the seed layer morphology can drive the one of the nanowires. Also, advanced characterization by photoluminescence and synchrotron radiation will be performed on the grown nanostructures
Hammadi, Zoubida. "Etude des propriétés de films minces de cuivre élaborés par la technique de dépôts par voie chimique en phase gazeuse à partir d'un composé organométallique." Aix-Marseille 2, 1993. http://www.theses.fr/1993AIX22021.
Grente, Karine. "Amélioration de la résistance à la corrosion à haute température de composites à matrice céramique élaborés par voie gazeuse." Bordeaux 1, 2004. http://www.theses.fr/2004BOR12784.
Blévin, Thomas. "Élaboration et caractérisation de solutions dopantes au bore innovantes par voie PECVD : application à la fabrication de cellules solaires à homojonction." Thesis, Lille 1, 2015. http://www.theses.fr/2015LIL10137/document.
This thesis focuses on two alternative boron emitter elaboration routes for n-type crystalline silicon solar cells in order to simplify fabrication processes on one hand, and to improve conversion efficiencies on the other hand. The first route, driven by industrial integration concern, proposes the use of PECVD-LF boron-doped dielectric layers (SiOx:B), annealed by thermal diffusion. Emitter parameters similar to those made by BCl3 gaseous diffusion are obtained on n-type substrates. The second approach, which is more exploratory, considers a boron-doped microcrystalline silicon layers (µc-Si:B) made by boron-doped amorphous silicon crystallization. The elaboration of this high temperature hetero-emitter targets higher open-circuit voltages than standard n-PERT cells.SiOx:B layers elaboration and structural properties study highlighted several phenomena occurring during diffusion annealing. Doping and passivation qualification of associated boron emitters showed good performances. The use of SiOx:B layers during a dopant codiffusion step led to industrial size (239 cm²) n-PERT solar cells fabrication according to two simplified processes (3 steps suppression) with, what is to our knowledge, the highest published efficiencies (20%) on the considered structure. On the other hand, µc-Si:B layers were developed and characterized. The electrical potential of associated hetero-emitters was assessed on symmetrical devices showing that iVoc higher than 700mV can be reached. Contacting on this new emitter was evaluated by metal screen-printing. However, to date, blistering issues limit emitter integration into solar cells
Fraccaroli, Mathias. "Synthèse par CVD/ALD sur grandes surfaces d'un sulfure de vanadium transparent et conducteur." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALT006.
In the context of functional diversification (“More than Moore”), transition sulfides are currently being actively studied for original optical devices production. Some materials in this family have a lamellar structure, similar to graphene like vanadium sulfides. The synthesis of these lamellar films remains actively dominated by high-temperature CVD processes (> 550 ° C). However, in order to hope the development of a reliable synthesis methods, it's important to reduce this deposition temperature which leads to a poor uniformity and a poor conformity. In this work we have studied the potential of a chemical vapor deposition approach at low temperature (200 ° C). This method allow us to obtain an amorphous vanadium sulfide film on a 300 mm wafer and point out theirability to self-reorganize in order to obtain a lamellar film of V7S8 after thermal annealing. A 5.2nm film has interesting optical and electrical properties; this film is conductive with a carrier density of 1.1.1023 cm-3, the holes are the main charges carriers (type p), a mobility of 0.2 cm2. (Vs) -1, a conductivity of 1063 S.cm -1, an output work of 4.8 eV while preserving good transparency (transmittance of 75% for a wavelength of 550nm)
Bouhouch, Lahoussine. "Élaboration des couches d'alliages NI-FE par voie électrolytique : Études électrique, magnétique et structurale." Nancy 1, 1988. http://www.theses.fr/1988NAN10089.
Defforge, Thomas. "Optimisation de la gravure de macropores ordonnés dans le silicium et de leur remplissage de cuivre par voie électrochimique : application aux via traversants conducteurs." Thesis, Tours, 2012. http://www.theses.fr/2012TOUR4033/document.
These thesis works deal with the achievement of Through Silicon Via (TSV) essential technological issue for microelectronic device 3D integration. For this purpose, we opted for a “full-electrochemical” way of TSV production because of lower fabrication costs as compared to dry etching and deposition techniques. Indeed, ordered through silicon macropores were carried out by silicon anodization in hydrofluoric acid-containing solution and then filled by copper electrochemical deposition. The main objective is to determine if the macroporous silicon arrays can be a viable alternative as Deep Reactive Ion Etching (DRIE).The etching parameters of through silicon macropore arrays were studied both in low-doped n- and p-type silicon. The electrolyte composition as well as the density of the initiation sites was optimized to enable the growth of high aspect ratio, high density through silicon ordered macropores. After silicon anodization, through via were filled with copper. By optimizing the copper deposition parameters (bath composition and applied potential), the resistance per via was measured equal to 32 mΩ (i.e. 1.06 times higher than the theoretical copper bulk resistivity)
Le, Febvrier Arnaud. "Couches minces et multicouches d'oxydes ferroélectrique (KTN) et diélectrique (BZN) pour applications en hyperfréquences." Phd thesis, Université Rennes 1, 2012. http://tel.archives-ouvertes.fr/tel-00795542.
Hildebrandt, Thibaud. "Optimisation des interfaces absorbeur/couche tampon/fenêtre avant dans les cellules solaires à base de Cu(In,Ga)Se2." Thesis, Paris 6, 2014. http://www.theses.fr/2014PA066720.
The replacement of CdS-based buffer layer in Cu(In,Ga)Se2 solar cells has been one of the main challenges of the research community for the last decade. Today, one of the most promising alternative material is the chemically bath deposited Zn(S,O,OH). Because of its low deposition rate and of metastable behavior, it becomes necessary to proceed to an optimization of experimental conditions and of the various interfaces. The first part of this work has been dedicated to the optimization of the deposition bath thanks to the introduction of new additives. It has been possible to underline the additive effects on both the deposition rate and on the chemical composition of the deposited layers. The second part of this work has been dedicated to the optimization of the (Zn,Mg)O/ZnO:Al window layer. Thanks to an improvement of the sputtering conditions, it has been possible to reduce metastability of the solar cells, and to limit sodium migration up to the Zn(S,O,OH) layer. These optimized conditions combined to the variation of the CIGSe surface composition have allowed us to outperform CdS-based references solar cells
Bou, Pierre. "Dépôt de diamant par CVD assistée par plasma micro-onde." Orléans, 1991. http://www.theses.fr/1991ORLE2061.
Laduye, Guillaume. "CVD du carbure de silicium à partir du système SiHxCl4-x/CyHz/H2 : étude expérimentale et modélisation." Thesis, Bordeaux, 2016. http://www.theses.fr/2016BORD0116/document.
Silicon carbide (SiC) is material of choice for the matrix of Ceramic Matrix Composites (CMC).CH3SiCl3/H2 mixtures are currently used as gas precursor for the synthesis of the CVI-SiC matrices.The present work considers the dual-source approach with two separate carbon and silicon precursorsmolecules.In the case of SiHCl3/C3H8/H2 mixture, systematic studies of total flow rate, temperature, total pressureand C/Si ratio of initial gaseous phase are realized. Kinetics obtained with growth rate measurements and solid composition are compared with results from CH3SiCl3/H2 mixture. On the basis of the apparent reaction orders and activation energies, experimental kinetic laws are derived. Through IRTF analysis of the gas phase, the partial pressures of the different stable products are correlated with deposition kinetic and solid composition. Results obtained in gas-phase kinetic simulation show a good correlation with the experimental results and a mechanism of homogeneous decomposition is proposed. A better understanding of the role of the principal species in homogenous and heterogeneous phase is obtained through the study of six other gas systems and the roles of some effective precursors are discussed. Finally, infiltration results of porous material models with different precursor systems reveal significant improvements as homogeneity of kinetic deposit.Hence, favourable conditions to silicon carbide infiltration can be obtained by adapting the reactivity of the gas phase, with the choice of initial precursors and homogeneous chemistry associated. Asystematic study of the process evidences promising working windows for the infiltration of pure SiCin porous performs
Henrot, Serge. "Synthèse stéréo et énantiosélective de béta-hydroxy-esters fonctionnalisés par voie chimique et par voie microbiologique." Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37605889c.
Dannoux, Morgane. "Recyclage chimique des polyesters par la voie extrusion réactive." Lyon 1, 2001. http://www.theses.fr/2001LYO10100.
MARTINEAU, LAURE. "Valorisation du lactose par voie chimique : synthese du lactulose." Rennes 1, 1989. http://www.theses.fr/1989REN10033.
Pantiru, Magdalena. "Copolymérisation cationique d'acétals cycliques par voie chimique et photochimique." Montpellier 2, 2000. http://www.theses.fr/2000MON20081.
Freiman, Gabriel. "Dépôt séquentiel de monocouches d'oxyde par voie humide pour la microélectronique." Phd thesis, Ecole Polytechnique X, 2006. http://pastel.archives-ouvertes.fr/pastel-00002566.
Guillain, Frédéric. "Dépôt par voie liquide de couches interfaciales pour cellules photovoltaïques organiques." Thesis, Bordeaux, 2014. http://www.theses.fr/2014BORD0198/document.
In order to allow the industrialisation of organic photovoltaic cells, power conversion efficiency must be increased, stability must be improved, and in-line deposition processing (solution processing of each layer) must be developed. This work presents the development of solution-processed interlayers, layers inserted between the photoactive organic layer and electrodes in order to enhance charge extraction. This study is focused on the hole transport layer and, in particular, the replacement of the commonly used material PEDOT:PSS. A frequent approach to achieve this is the use of transition metal oxide layers such as MoO3 orV2O5. These oxides are usually deposited by evaporation but can be solution-processed from precursor solutions (e.g. sol-gel) or nanoparticle suspensions. This work considers three approaches. In the first, the use of sol-gel deposited tungsten or vanadium oxide led to an enhancement of hole extraction, allowing efficiencies in the range of what is expected for state of the art materials to be reached. The second approach involved the use of solution processed cobalt oxide. Although the use of this material enhanced charge extraction, due to a deposition issue, efficiency did not reach expected value. Finally, thermally induced diffusion of a solution-processed dopant was utilised, which is a novel approach. The dopant deposited at the organic/metal interface enhances hole extraction and leads to power conversion efficiencies similar to reference cells incorporating an evaporated metal oxide interlayer
Ricci, Martine. "Carbonitrures hydrogénés obtenus par dépôt chimique en phase vapeur assisté par un plasma réactif." Bordeaux 1, 1991. http://www.theses.fr/1991BOR10568.
Nugier-Chauvin, Caroline. "Modifications regioselectives du saccharose par voie chimique et/ou enzymatique." Rennes 1, 1991. http://www.theses.fr/1991REN10071.
IGNATIOUS, FRANCIS-XAVIER. "Insertion de cations organiques dans le polyacetylene par voie chimique." Université Louis Pasteur (Strasbourg) (1971-2008), 1989. http://www.theses.fr/1989STR13035.
Sanchez, Cadena Lorena Eugenia. "Valorisation par voie chimique de déchets de tôles d'aluminium laquées." Châtenay-Malabry, Ecole centrale de Paris, 2007. http://www.theses.fr/2007ECAP1056.
Labatut, Christine. "Contribution à l'étude des revêtements d'alumine par dépôt chimique en phase gazeuse." Montpellier 2, 1993. http://www.theses.fr/1993MON20158.
Mouchon, Arnaud. "Mécanismes de pyrolyse des hydrocarbures et dépôt de pyrocarbone par CVD/CVI." Bordeaux 1, 2004. http://www.theses.fr/2004BOR12916.
Remondière, Fabien. "Utilisation de la voie chimique pour le dépôt de films minces de matériaux ferroélectriques de structure perovskite." Limoges, 2006. http://aurore.unilim.fr/theses/nxfile/default/4c046d36-8668-4c14-ac8c-bc6dc58e1074/blobholder:0/2006LIMO0024.pdf.
Perovskite based-oxides e. G. Na0,5Bi0,5TiO3 (NBT) or Bi-layered perovskites, called Aurivillius phases, MBi4Ti4O15 (M=Ba or Sr) are lead-free candidates for the fabrication of non- volatile ferroelectric memories. The chemical solution deposition of MBi4Ti4O15 thin films is studied as a function of annealing temperature, heating rate and bismuth exc. Ess, contained into the sol. Two specific points are extracted : a texturation along (OOl)//(400)Sijustified by the anisotropy of the unit cell and the use of a rapid heating rate (RTA), a strong texture is obtained with the addition of an oriented seeding layer at the internaI interface. The sol-gel method applied to NBT system permits to crystallize single phase thin films at low temperature (T<500°C). Such films are piezoelectric view to the atomic force microscope - (piezoresponse) analysis. Nevertheless some modifications have been undertaken
Levesque, Olivier. "Matériaux composites carbonés obtenus par dépôt chimique en phase vapeur assisté par un plasma réactif." Bordeaux 1, 1989. http://www.theses.fr/1989BOR10574.
Hellala, Nesrine. "Synthèse et caractérisation chimique de cristaux et films de diamant par dépôt chimique en phase vapeur assisté par plasma micro-ondes." Thesis, Vandoeuvre-les-Nancy, INPL, 2006. http://www.theses.fr/2006INPL075N/document.
The aim of this work was to investigate chemical characterization of diamond crystals and films elaborated by microwave plasma assisted chemical vapour deposition on silicon. This study was focused on a pluri-technique approach founded on the spectroscopic techniques. Raman spectroscopy, XPS spectroscopy, X-ray diffraction and scanning electron microscopy have provided essential and additional information about physico-chemical and structural properties of diamond deposits according to a various synthesis parameters. As examples, a new electronic transition was observed for hydrogen-terminated diamond surface films. This transition presents a surface gap at 2,7 eV provided by a resonant Raman. Anisotropic internal stresses were observed for films presenting a fiber axis <110> and for isolated twinned crystals presenting a secondary nucleation
Longo, Maria Asuncion. "Modification d'enzymes par voie chimique et enzymatique : étude de leurs propriétés." Toulouse, INSA, 1995. http://www.theses.fr/1995ISAT0006.
JACCON, THIERRY. "Poudres ultra-fines de zircone : syntheses par voie chimique en solution." Limoges, 1990. http://www.theses.fr/1990LIMO0082.
Bocquet, Pascal. "Etude numérique et expérimentale d'un réacteur de dépôt sur fibre par voie PVD." Paris 11, 2001. http://www.theses.fr/2001PA112324.
This thesis is devoted to the study of a triode cathodic tubular sputtering device with a magnetic confinement. This facility, designed by the ONERA, is used for the online production of titanium alloy coat on silicon carbide (SiC) fibres for the industrial manufacture of metal matrix composites (MMC). The work reported in this thesis is based on the study of the argon plasma used in the reactor. It aims at answering the two following questions: how this production tool is working? and what is about its limitations? Concurrently with the experimental studies, we developed and used a particles simulation code (MCC-PIC) of the coating chamber. It gives access to some plasma parameters hardly measurable because of the tubular geometry of the device. The comparison between the coatings produced with static and running fibres, the spectroscopy measurements and the numerical results allow us to understand the major part of the physical phenomena observed in the discharge. .
Bachelet, Romain. "Couches minces d'oxydes élaborées par voie sol-gel, épitaxiées et nanostructurées par traitements thermiques post-dépôt." Limoges, 2006. http://aurore.unilim.fr/theses/nxfile/default/4cc09354-efa8-4f34-bdf3-4f9197e96005/blobholder:0/2006LIMO0044.pdf.
This work deals with elaboration of epitaxial oxide thin films by post-deposition thermal treatments from sol-gel method. The thermal treatments induce the formation of nanostructures made of nano-islands. Different nanostructures have been realized on different pre-patterned monocrystalline surfaces. Flat-top islands have been obtained on smooth substrates, dome-shaped islands on rough substrates and tilted flat-top islands on vicinal surfaces. When the island diameter is smaller than the mean terrace length of step-bunched vicinal surface, self-organized arrays of nano-islands can be encountered. The nanostructured thin films have been studied by atomic force microscopy and x-ray diffraction using reciprocal space mapping
Prestigiacomo, Morgane. "Fabrication et étude de structures sub-microniques déposées par faisceau d'ions focalisés (FIB)." Aix-Marseille 2, 2005. http://www.theses.fr/2005AIX22051.
Lajzerowicz, Pierre. "Modélisation de l'élaboration de composites carbone-carbone par dépôt chimique en phase vapeur." Grenoble INPG, 1987. http://www.theses.fr/1987INPG0144.
Brinza, Ovidiu. "Stratégies pour la croissance de cristaux de diamant par CVD assisté par plasma micro-onde." Paris 13, 2009. http://www.theses.fr/2009PA132005.
This study aims to optimize a CVD growth process for mono-crystalline diamond films and to develop tools suitable for the development of growth strategies. In a first stage, the observation of stabile {113} faces on our diamond crystals has motivated us to develop a 3D geometric growth model whose input parameters are the displacement speeds of {111}, {110} and {113} respectively, which are normalized to those of one the {100}faces ( denoted α, β and γ respectively). The validation of the proposed model was demonstrated through the experimental measurement of the growth speeds of {100}, {111}, {110} and {113} crystallographic orientations respectively, which depend on the growth conditions. However, with this tool a particular growth strategy can be developed, in order to obtain a specific morphology, or to increase particular surface planes of the growing crystals. As the diamond substrate used played an important role in the growth quality, a study concerning its pre-treatment and origin was carried out. It has been demonstrated that in order to obtain thick CVD diamond films, using high microwave power density, it is essential that the substrate be etched by a H2/O2 plasma. Furthermore, it has been proven that synthetic HPHT Ib substrates, despite having a high concentration of nitrogen, are well-suited to obtaining thick films as they have relatively few dislocations, including theirpolishing characteristics which are better than the currently available CVD substrates. Finally, solutions are proposed to limit the production cost of this material which is quite high. The first refers to using a pulsed-discharge which allows an increased deposition speed by almost 25%, reducing at the same time the average injected microwave power by 15%, as well as preserving a material quality equivalent to that obtained before. The second solution refers to introducing nitrogen in the gas phase, a well-known component for its capacity to considerably increase the growth speed. Moreover, the highlight of this study is that, at a high power density, there is a strong link between the deposition temperature and the nitrogen concentration; when the nitrogen concentration is increased, the growth mode evolves from a step-flow to a bi-dimensional mode
Ponsart, Stéphanie. "Modification chimique de polyesters aliphatiques biorésorbables par voie anionique : une nouvelle voie d'accès à des copolyesters fonctionnalisés." Montpellier 1, 2000. http://www.theses.fr/2000MON13504.
Loubat, Anais. "Croissance par voie chimique et propriétés de transport électronique de nanofils d'or." Phd thesis, INSA de Toulouse, 2014. http://tel.archives-ouvertes.fr/tel-01037878.
Bernard, Pascale. "Synthèse par voie enzymatique : étude comparative de milieux réactionnels." Vandoeuvre-les-Nancy, INPL, 1995. http://www.theses.fr/1995INPL002N.
Pottier, Yves. "Hydroformylation asymétrique du styren catalysée par des complexes rhodies générés par voie chimique et électrochimique." Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb37617680d.
Pottier, Yves. "Hydroformylation asymétrique du styrène catalysée par des complexes rhodiés générés par voie chimique et électrochimique." Lille 1, 1988. http://www.theses.fr/1988LIL10013.
Ghanem, Frida. "Elaboration et caractérisation de films de cuivre par la méthode de dépôt chimique dynamique." Ecully, Ecole centrale de Lyon, 2003. http://bibli.ec-lyon.fr/exl-doc/TH_T1931_fghanem.pdf.
Deposit weting technicals which used more particulary for metallisation of polymers, take more and more industrial interested, especially electrical resistance for electromagnetic shielding. Environnementally norm became so strict, new process have been developped whose respect environnement, especially in case of rejecting effluents. In another side, metallisation technicals present a range of long and expensive treatments. M. Stremsdoerfer and col have developped a new process of dynamic metallisation. This technical based on projection of simultaneous aqueous solutions onto substrate. The aim is to reduce the number of intermediate steps which we can find in case of classical metallisation, namely activation of polymers. The preparation of the surface of polymer is a step which determine the adhesion of the metallic film. The treatment which we used to treat the surface is the couple mechanical/physical. This couple prevents chemical attacks and permit to obtain an homogenous and thick deposit. The mechanical treatment led to roughness surface and the physical treatment (corona discharge) increase the mouillability of the surface of polymers. On the occasion of this study, a copper dynamic deposit was elaborated by dynamic chemical deposition
Aspar, Bernard. "Contribution à l'étude du système Al-O-N par dépôt chimique en phase gazeuse." Montpellier 2, 1991. http://www.theses.fr/1991MON20186.