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Добірка наукової літератури з теми "Etching"

Автор: Grafiati

Опубліковано: 4 червня 2021

Оновлено: 25 липня 2025

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Статті в журналах з теми "Etching"

1

Çakır, Orhan. "Study of Etch Rate and Surface Roughness in Chemical Etching of Stainless Steel." Key Engineering Materials 364-366 (December 2007): 837–42. http://dx.doi.org/10.4028/www.scientific.net/kem.364-366.837.

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In this study, stainless steel material (X5CrNi1810) was micromachined by chemical etching method. Ferric chloride was selected as etchant which is the most widely used etchant for iron-based materials. Four different etchant concentrations (32 °Bé, 36 °Bé, 40 °Bé and 44 °Bé) were used at various etching temperature. Moreover, the influence of the addition of hydrochloric acid to main etchant on etching performance was examined. The aim of this study was to investigate the depth of etch and surface roughness affected by etchant concentration, hydrochloric acid addition and etching temperature.

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2

Chabanon, Angélique, Alexandre Michau, Michel Léon Schlegel, et al. "Surface Modification of 304L Stainless Steel and Interface Engineering by HiPIMS Pre-Treatment." Coatings 12, no. 6 (2022): 727. http://dx.doi.org/10.3390/coatings12060727.

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A clean and defect-free substrate/coating interface is required to guarantee good adhesion of coatings under service conditions. For this purpose, an etching pre-treatment using High-Power Impulse Magnetron Sputtering (HiPIMS) was performed to modify the surface of 304L stainless steel. The effect of three etching procedures on the substrate properties, such as corrosion resistance and adhesion, was investigated with unprecedented spatial resolution and spectroscopic details. Glancing angle X-ray diffraction showed modification in phase content but no neoformation after steel etching. X-ray ph

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3

Hvozdiyevskyi, Ye Ye, R. O. Denysyuk, V. M. Tomashyk, G. P. Malanych, Z. F. Tomashyk Tomashyk та A. A. Korchovyi. "Chemical-mechanical polishing of CdTe and based on its solid solutions single crystals using HNO3 + НІ + ethylene glycol iodine-emerging solutions". Chernivtsi University Scientific Herald. Chemistry, № 819 (2019): 45–49. http://dx.doi.org/10.31861/chem-2019-819-07.

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The interaction of the CdTe and Zn0.04Cd0.96Te, Cd0.2Hg0.8Te solid solutions single crystals with the iodine-emerging etchings based on aqueous solutions of HNO3 + НІ + ethylene glycol has been investigated and etching compositions have been developed and optimized, as well as methods of their chemical treatment for the formation of high-quality surface. The dissolution of these semiconductor materials in the aqueous solutions of the (HNO3+HI+EG)/EG have been investigated and dependences “etchant composition – etching rate” with determining the regions of polishing and unpolishing solutions ha

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4

Li, Hao, Yong You Geng, and Yi Qun Wu. "Selective Wet Etching Characteristics of Aginsbte Phase Change Film with Ammonium Sulfide Solution." Advanced Materials Research 529 (June 2012): 388–93. http://dx.doi.org/10.4028/www.scientific.net/amr.529.388.

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The selective wet etching characteristics of AgInSbTe film as a new thermal lithography material were studied with ammonium sulfide solution as etchant. Influences of vacuum-annealing temperature, etchant concentration and wet etching time on selective wet etching characteristics of the amorphous and crystalline AgInSbTe films were investigated. Experimental results indicated that the etching rate of AgInSbTe film increased with the enhancement of crystallization extent, and the etching rate of crystalline state AgInSbTe film annealed at 300°C was 35nm/min in 17wt% ammonium sulfide solution, a

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5

Pashchenko, G. A., M. J. Kravetsky, and O. V. Fomin. "Singularities of Polishing Substrates GaAs by Chemo-Dynamical and Non-Contact Chemo-Mechanical Methods." Фізика і хімія твердого тіла 16, no. 3 (2015): 560–64. http://dx.doi.org/10.15330/pcss.16.3.560-564.

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The comparative investigation of two chemical polishing methods as applied to GaAs substrates is carried out. In both cases the equal etchant Br2+HBr was used. The comparison of etching rates and of surface morphology is carried out. It is revealed that numerous etching pits arise during chemo-dynamical polishing of GaAs (111) В samples but not arise during non-contact chemo-mechanical polishing of the same samples. Besides, last method allows to raise appreciably etching rate as compared with the method of chemo-dynamical polishing. That is, the same etchant behaves as selective or polishing

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6

Misal, Nitin D., and Mudigonda Sadaiah. "Investigation on Surface Roughness of Inconel 718 in Photochemical Machining." Advances in Materials Science and Engineering 2017 (2017): 1–9. http://dx.doi.org/10.1155/2017/3247873.

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The present work is focused on estimating the optimal machining parameters required for photochemical machining (PCM) of an Inconel 718 and effects of these parameters on surface topology. An experimental analysis was carried out to identify optimal values of parameters using ferric chloride (FeCl3) as an etchant. The parameters considered in this analysis are concentration of etchant, etching time, and etchant temperature. The experimental analysis shows that etching performance as well as surface topology improved by appropriate selection of etching process parameters. Temperature of the etc

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7

Alias, Ezzah Azimah, Muhammad Esmed Alif Samsudin, Steven DenBaars, James Speck, Shuji Nakamura, and Norzaini Zainal. "N-face GaN substrate roughening for improved performance GaN-on-GaN LED." Microelectronics International 38, no. 3 (2021): 93–98. http://dx.doi.org/10.1108/mi-02-2021-0011.

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Purpose This study aims to focus on roughening N-face (backside) GaN substrate prior to GaN-on-GaN light-emitting diode (LED) growth as an attempt to improve the LED performance. Design/methodology/approach The N-face of GaN substrate was roughened by three different etchants; ammonium hydroxide (NH4OH), a mixture of NH4OH and H2O2 (NH4OH: H2O2) and potassium hydroxide (KOH). Hexagonal pyramids were successfully formed on the surface when the substrate was subjected to the etching in all cases. Findings Under 30 min of etching, the highest density of pyramids was obtained by NH4OH: H2O2 etchin

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8

Nadira, Mahamood K., and V. Prakash. "A Study on Surface Chemical Behaviour of Solid State Nuclear Track Detector Films by Etching." Pearl Multidisciplinary Journal 6, no. 1 (2020): 3–8. https://doi.org/10.5281/zenodo.3688893.

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The etching is a process of modifying the flat smooth surface to identify the structure, phases, and other effects such as the orientation of grains, deformation and distribution of solute elements.  Due to the chemical reaction between the etchant and the detector material, some molecules of the detectors are removed.  The etchant used for LR-115 detectors in the present study is aqueous NaOH solution with 2.5 N.  The bulk etch rate has been estimated by varying the etching time, keeping the etching temperature constant. It has seen that, the bulk etch rate remai

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9

Tellier, C. R., T. G. Leblois, and A. Charbonnieras. "Chemical Etching of {hk0} Silicon Plates in EDP Part I: Experiments and Comparison with TMAH." Active and Passive Electronic Components 23, no. 1 (2000): 37–51. http://dx.doi.org/10.1155/apec.23.37.

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This paper deals with the anisotropic chemical etching of various silicon plates etched in EDP. Changes with orientation in geometrical features of etched surface and in the etching shape of starting circular sections are systematically investigated. These etching shapes are compared with shapes produced by etching in KOH and TMAH solutions; This experimental study allows us to determine the dissolution slowness surface for the EDP solution and to investigate the real influence of the etchant on two dimensional and three dimensional etching shapes.

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10

Zunic, Zora, Predrag Ujic, Igor Celikovic, and Kenzo Fujimoto. "ECE laboratory in the Vinca institute: Its basic characteristics and fundamentals of electrochemic etching on polycarbonate." Nuclear Technology and Radiation Protection 18, no. 2 (2003): 57–60. http://dx.doi.org/10.2298/ntrp0302057z.

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This paper deals with the introductory aspects of the Electrochemical Etching Laboratory installed at the VINCA Institute in the year 2003. The main purpose of the laboratory is its field application for radon and thoron large-scale survey using passive radon/thoron UFO type detectors. Since the etching techniques together with the laboratory equipment were transferred from the National Institute of Radiological Sciences, Chiba, Japan, it was necessary for both etching conditions to be confirmed and to be checked up^ i. e., bulk etching speeds of chemical etching and electrochemical etching in

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Дисертації з теми "Etching"

1

Lochnan, Katharine Jordan. "Whistler's etchings and the sources of his etching style, 1855-1880." New York : Garland Pub, 1988. http://catalog.hathitrust.org/api/volumes/oclc/17107762.html.

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2

El, Otell Ziad. "Neutral beam etching." Thesis, Open University, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607461.

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The aim of this research is to better understand the behaviour of pulsed discharges and electron dynamics for the purpose of tailoring the plasma properties for neutral beam etching (NBE) applications. A capacitively coupled plasma formed in a research system was used for a study of pulsed tailoring in an electropositive plasma. A combination of high time resolved optical diagnostics, plasma imaging and optical emission spectroscopy, and hairpin probe measurements were used to study the electron density and the energy distribution function during the ignition phase of a repetitively pulsed pla

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3

Parks, Joseph Worthy Jr. "Microscopic numerical analysis of semiconductor devices with application to avalnache photodiodes." Diss., Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/13539.

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4

Baker, Michael Douglas. "In-situ monitoring of reactive ion etching." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/15352.

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5

Zachariasse, Jacobus Marinus Frans. "Nanostructure etching with plasmas." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388386.

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6

Bloomstein, Theodore Michael. "Laser microchemical etching of silicon." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/11269.

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Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.<br>Includes bibliographical references (p. 195-205).<br>Theodore M. Bloomstein.<br>Sc.D.

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7

Stoikou, Maria D. "Etching of CVD diamond surfaces." Thesis, Heriot-Watt University, 2010. http://hdl.handle.net/10399/2441.

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This thesis presents a fundamental study on etching of diamond surfaces. Details of the growth by microwave plasma Chemical Vapour Deposition (CVD) and etching by microwave hydrogen plasma, oxygen reactive ion etching (RIE) and thermal oxidation are presented. Prolonged exposure of {100} diamond surfaces to microwave hydrogen plasma was investigated by atomic force microscopy (AFM). Reduction of surface roughness has been observed while formation of etch pits has not been detected. X-ray photoelectron spectroscopy (XPS) detected the removal of graphitic carbon and reduction of oxygen under hyd

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8

Hobbs, Neil Townsend. "Anisotropic etching for silicon micromachining." Thesis, Virginia Tech, 1994. http://hdl.handle.net/10919/40632.

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<p>Silicon micromachining is the collective name for several processes by which three dimensional structures may be constructed from or on silicon wafers. One of these processes is anisotropic etching, which utilizes etchants such as KOH and ethylene diamine pyrocatechol (EDP) to fabricate structures from the wafer bulk. This project is a study of the use of KOH to anisotropically etch (lOO)-oriented silicon wafers. The thesis provides a thorough review of the theory and principles of anisotropic etching as applied to (100) wafers, followed by a few examples which serve to illustrate the theor

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9

Astell-Burt, P. J. "Studies on etching and polymer deposition in halocarbon plasmas." Thesis, University of Oxford, 1987. http://ora.ox.ac.uk/objects/uuid:d8fd1069-a66b-4372-8ba0-b9ca5367445c.

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Plasma etching, the selective removal of materials by reaction with chemically active species formed in a glow-discharge, is widely used by the electronics industry because of the advantages over 'wet' processes. The full potential has yet to be realised because chemical processes occuring in the plasma and at the plasma/substrate interface are incompletely understood. In this work attention was focussed on the accumulation of polymers on surfaces during plasma etching in fluorocarbon gases. An apparatus was designed and constructed to explore the conditions which give rise to these deposits b

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10

Toogood, Matthew John. "Studies of the chemistry of plasmas used for semiconductor etching." Thesis, University of Oxford, 1991. http://ora.ox.ac.uk/objects/uuid:e234bbaa-d6e6-4ac8-a3dd-aa9a2c1b1e39.

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Optical diagnostic techniques have been developed and then used to investigate the chemistry of reactive species formed in CF<sub>4</sub> / O<sub>2</sub> rf parallel plate discharges, similar to those employed in semiconductor material processing. Oxygen atoms were detected by two photon laser induced fluorescence (LIF), and the technique was found to have a number of experimental caveats owing mainly to the high laser intensities required. In particular, amplified spontaneous emission (ASE), was observed from laser excitation of oxygen, and was found to influence the spontaneous fluorescence

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Книги з теми "Etching"

1

McKeever, Ian. Colour etching. Alan Cristea Gallery, 1997.

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2

Art, Philadelphia Museum of, ed. The Etching Club of London: A taste for painters' etchings. Philadelphia Museum of Art, 2002.

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3

Edwards, J. A. Field assisted etching. Controller HMSO, 1986.

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4

Gravett, Terence. Etching: A handbook to be used with the video "Etching". Brighton Polytechnic Media Services, 1991.

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5

Premio internazionale biennale d'incisione Città di Monsummano Terme (3rd 2003 Monsummano Terme, Italy). Georges Rouault, De Chirico Giorgio. Comune di Monsummano Terme, 2003.

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6

Lowe, Ian. The etchings of Wilfred Fairclough. Scolar, 1990.

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7

Lowe, Ian. The etchings of Wilfred Fairclough. Ashgate Editions, 1990.

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8

van Roosmalen, A. J., J. A. G. Baggerman, and S. J. H. Brader. Dry Etching for VLSI. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-2566-4.

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9

Rangelow, Ivo W. Deep etching of silocon. Oficyna Wydawnicza Politekchniki Wrocławskiej, 1996.

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10

M, Manos Dennis, and Flamm Daniel L, eds. Plasma etching: An introduction. Academic Press, 1989.

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Частини книг з теми "Etching"

1

Allen, David. "Etching." In CIRP Encyclopedia of Production Engineering. Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-642-35950-7_6482-3.

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2

Allen, David. "Etching." In CIRP Encyclopedia of Production Engineering. Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-642-35950-7_6482-4.

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3

Anner, George E. "Etching." In Planar Processing Primer. Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0441-5_10.

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4

Allen, David. "Etching." In CIRP Encyclopedia of Production Engineering. Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-662-53120-4_6482.

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5

Allen, David. "Etching." In CIRP Encyclopedia of Production Engineering. Springer Berlin Heidelberg, 2014. http://dx.doi.org/10.1007/978-3-642-20617-7_6482.

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6

Gooch, Jan W. "Etching." In Encyclopedic Dictionary of Polymers. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_4522.

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7

Clark, Raymond H. "Etching." In Handbook of Printed Circuit Manufacturing. Springer Netherlands, 1985. http://dx.doi.org/10.1007/978-94-011-7012-3_20.

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8

Kondoh, Eiichi. "Etching." In Micro- and Nanofabrication for Beginners. Jenny Stanford Publishing, 2022. http://dx.doi.org/10.1201/9781003119937-6.

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9

Bährle-Rapp, Marina. "etching." In Springer Lexikon Kosmetik und Körperpflege. Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-71095-0_3685.

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10

Cheng, Hua-Chi. "Wet Etching." In Handbook of Visual Display Technology. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-14346-0_59.

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Тези доповідей конференцій з теми "Etching"

1

Hei, Zehuan, Yang Xu, Yang Liu, et al. "Etching Surface and Etching Dimension Control for IGZO TFT Fabrication in 3D Memory Device." In 2025 Conference of Science and Technology of Integrated Circuits (CSTIC). IEEE, 2025. https://doi.org/10.1109/cstic64481.2025.11017774.

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2

Axt, Henry, Martin Kratz, Christian Peters, Benedikt Bornschlegel, and Christian Hinke. "3D target shape retention within selective laser-induced etching (SLE) via simulation of chemical etching." In Laser-based Micro- and Nanoprocessing XIX, edited by Rainer Kling, Wilhelm Pfleging, and Koji Sugioka. SPIE, 2025. https://doi.org/10.1117/12.3042062.

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3

Nishida, Akio, Tomoko Sekiguchi, Toshiaki Yamanaka, et al. "Visualization of Local Gate Depletion in PMOSFETs Using Unique Backside Etching and Selective Etching Technique." In ISTFA 1999. ASM International, 1999. http://dx.doi.org/10.31399/asm.cp.istfa1999p0413.

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Abstract A novel backside-analysis technique has been developed to identify the locations of failing transistors in manufactured LSIs. Local gate doping depletion in p+ salicide gates of PMOSFETs, which reduces drain current, was visualized for the first time. Our method consists of backside etching and subsequent selective wet etching of the gate electrode. Si substrate material was removed with a highly selective Si etchant without damaging the gate-oxide film. After the gate-oxide film removal, a locally depleted gate was selectively etched using the same etchant. Since the etching rates of

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4

"The effect of fluoride based salt etching in the synthesis of Mxene." In Sustainable Processes and Clean Energy Transition. Materials Research Forum LLC, 2023. http://dx.doi.org/10.21741/9781644902516-8.

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Abstract. Here we reported the effect of fluoride-based salt etching in the synthesis of Ti3C2 MXene by etching Ti3AlC2 MAX phase precursor. Lithium fluoride (LiF) and ammonium fluoride were the fluoride-based salts were chosen as an etching agent in this study. The optimum etchant concentration and etching temperature of the MAX phase were evaluated. The presence of aluminium etched was determined by using the Inducted Couple Plasma Optical Emission Spectrometry (ICP-OES). The initial concentration of aluminium in Ti3AlC2 precursor was estimated based on the data from Energy Dispersive X-Ray

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5

Chu, Jack O., George W. Flynn, Peter D. Brewer, and Richard M. Osgood. "Laser-Initiated Dry Etching of SiO2." In Microphysics of Surfaces, Beams, and Adsorbates. Optica Publishing Group, 1985. http://dx.doi.org/10.1364/msba.1985.tuc5.

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In general photochemical (drying etching) process of thin films based on (UV) laser-initiated chemistry is difficult to investigate both mechanistically and kinetically. Some of the most important questions are concerned with the photo-formation of the reactive species and their (reactive) chemical interaction with the surface. The UV-laser assisted etching of SiO2 from photolysis of CH2 CHF is quite attractive for mechanistic studies of the etching process because of the relative simple (in-situ) application of IR (time-resolved) fluorescence and absorption techniques to monitor both the HF e

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6

Demos, Alexandros T., H. S. Fogler, Stella W. Pang, and Michael E. Elta. "Enhanced etching of InP by cycling with sputter etching and reactive ion etching." In Santa Cl - DL tentative, edited by James A. Bondur and Terry R. Turner. SPIE, 1991. http://dx.doi.org/10.1117/12.48924.

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7

Easter, Clayton, and Chad O’Neal. "XeF2 Etching of Silicon for the Release of Micro-Cantilever Based Sensors." In ASME 2008 International Mechanical Engineering Congress and Exposition. ASMEDC, 2008. http://dx.doi.org/10.1115/imece2008-66520.

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The release of microstructures from a Si substrate depends directly on the underetching (isotropic) characteristics of the etchant used. For the purpose of this study, XeF2 gas was selected as the etchant medium. Etching by XeF2 is primarily a function of pressure, which determines the rate of interaction between the Si surface and the etchant gas. However, other factors play a large role in XeF2 etching characteristics. Testing was conducted to determine the etch rate and profile of XeF2 etching when various parameters of the structure design are changed (Si exposure area, size and dimension

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8

Wu, Xuming, Changhe Zhou, Peng Xi, Enwen Dai, Huayi Ru, and Liren Liu. "Etching quartz with inductively coupled plasma etching equipment." In Optical Science and Technology, SPIE's 48th Annual Meeting, edited by Ernst-Bernhard Kley and Hans Peter Herzig. SPIE, 2003. http://dx.doi.org/10.1117/12.504001.

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9

Twyford, E. J., P. A. Kohl, N. M. Jokerst, and N. F. Hartman. "Increased modulation depth of submicrometer gratings produced by photoelectrochemical etching of GaAs." In OSA Annual Meeting. Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.fk1.

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Submicrometer optical diffraction gratings with improved modulation depth were photoelectrochemically etched on n-GaAs. This etching technique uses an elevated etchant temperature to exceed the spatial resolution limits imposed by etching at room temperature and provides a method of photoelectrochemical etching of gratings whose period is shorter than those of previously reported photoelectrochemically etched gratings. The improved grating modulation depth, the result of an increase in electrolyte temperature, was experimentally measured by etching 0.28 μm period gratings at five different tem

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10

Rodriguez, R., and F. V. Wells. "Species Identification and Conversion Measurements in a Carbon Tetrachloride Radio Frequency Plasma Using Coherent Raman Techniques." In Laser Applications to Chemical Analysis. Optica Publishing Group, 1994. http://dx.doi.org/10.1364/laca.1994.wd.7.

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Анотація:

Radio frequency plasmas are used in the electronics industry in various phases of microcircuitry processing. Deposition and etching are two key areas where these types of plasmas are used. In recent past, carbon tetrachloride, CC14, has been used in the etching of metals such as aluminum. However, one of the problems associated with using this gas as an etchant is the formation of a glow polymer which coats the walls of the chamber and can interfere with the etching.

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Звіти організацій з теми "Etching"

1

Novick-Cohen, A. Laser Photodeposition and Etching Study. Defense Technical Information Center, 1987. http://dx.doi.org/10.21236/ada190535.

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2

Kummel, Andrew C. Chemical Physics of Digital Etching. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada353731.

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3

Shier, Douglas R. Laser Photodeposition and Etching Study. Defense Technical Information Center, 1985. http://dx.doi.org/10.21236/ada167179.

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4

Shul, R. J., R. D. Briggs, S. J. Pearton, et al. Chlorine-based plasma etching of GaN. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/432987.

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5

Fischer, Arthur J., Benjamin Leung, and George T. Wang. Photoelectrochemical Etching of GaN Quantum Wires. Office of Scientific and Technical Information (OSTI), 2015. http://dx.doi.org/10.2172/1221710.

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6

Karmiol, Benjamin. Integrated Electrochemical Decontamination and Etching System. Office of Scientific and Technical Information (OSTI), 2020. http://dx.doi.org/10.2172/1673357.

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7

Ross, F. M., and P. C. Searson. Dynamic observation of electrochemical etching in silicon. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/71306.

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8

Doyle, Kevin, and Sudhir Trivedi. Dislocation Etching Solutions for Mercury Cadmium Selenide. Defense Technical Information Center, 2014. http://dx.doi.org/10.21236/ada609573.

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9

Vartuli, C. B., J. W. Lee, and J. D. MacKenzie. ICP dry etching of III-V nitrides. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/541909.

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10

Greenberg, K. E., P. A. Miller, R. Patteson, and B. K. Smith. Plasma-etching science meets technology in the MDL. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/10147051.

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