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Дисертації з теми "Etching"

Автор: Grafiati

Опубліковано: 4 червня 2021

Оновлено: 25 липня 2025

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1

Lochnan, Katharine Jordan. "Whistler's etchings and the sources of his etching style, 1855-1880." New York : Garland Pub, 1988. http://catalog.hathitrust.org/api/volumes/oclc/17107762.html.

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2

El, Otell Ziad. "Neutral beam etching." Thesis, Open University, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607461.

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The aim of this research is to better understand the behaviour of pulsed discharges and electron dynamics for the purpose of tailoring the plasma properties for neutral beam etching (NBE) applications. A capacitively coupled plasma formed in a research system was used for a study of pulsed tailoring in an electropositive plasma. A combination of high time resolved optical diagnostics, plasma imaging and optical emission spectroscopy, and hairpin probe measurements were used to study the electron density and the energy distribution function during the ignition phase of a repetitively pulsed pla

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3

Parks, Joseph Worthy Jr. "Microscopic numerical analysis of semiconductor devices with application to avalnache photodiodes." Diss., Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/13539.

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4

Baker, Michael Douglas. "In-situ monitoring of reactive ion etching." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/15352.

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5

Zachariasse, Jacobus Marinus Frans. "Nanostructure etching with plasmas." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388386.

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6

Bloomstein, Theodore Michael. "Laser microchemical etching of silicon." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/11269.

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Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.<br>Includes bibliographical references (p. 195-205).<br>Theodore M. Bloomstein.<br>Sc.D.

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7

Stoikou, Maria D. "Etching of CVD diamond surfaces." Thesis, Heriot-Watt University, 2010. http://hdl.handle.net/10399/2441.

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This thesis presents a fundamental study on etching of diamond surfaces. Details of the growth by microwave plasma Chemical Vapour Deposition (CVD) and etching by microwave hydrogen plasma, oxygen reactive ion etching (RIE) and thermal oxidation are presented. Prolonged exposure of {100} diamond surfaces to microwave hydrogen plasma was investigated by atomic force microscopy (AFM). Reduction of surface roughness has been observed while formation of etch pits has not been detected. X-ray photoelectron spectroscopy (XPS) detected the removal of graphitic carbon and reduction of oxygen under hyd

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8

Hobbs, Neil Townsend. "Anisotropic etching for silicon micromachining." Thesis, Virginia Tech, 1994. http://hdl.handle.net/10919/40632.

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<p>Silicon micromachining is the collective name for several processes by which three dimensional structures may be constructed from or on silicon wafers. One of these processes is anisotropic etching, which utilizes etchants such as KOH and ethylene diamine pyrocatechol (EDP) to fabricate structures from the wafer bulk. This project is a study of the use of KOH to anisotropically etch (lOO)-oriented silicon wafers. The thesis provides a thorough review of the theory and principles of anisotropic etching as applied to (100) wafers, followed by a few examples which serve to illustrate the theor

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9

Astell-Burt, P. J. "Studies on etching and polymer deposition in halocarbon plasmas." Thesis, University of Oxford, 1987. http://ora.ox.ac.uk/objects/uuid:d8fd1069-a66b-4372-8ba0-b9ca5367445c.

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Plasma etching, the selective removal of materials by reaction with chemically active species formed in a glow-discharge, is widely used by the electronics industry because of the advantages over 'wet' processes. The full potential has yet to be realised because chemical processes occuring in the plasma and at the plasma/substrate interface are incompletely understood. In this work attention was focussed on the accumulation of polymers on surfaces during plasma etching in fluorocarbon gases. An apparatus was designed and constructed to explore the conditions which give rise to these deposits b

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10

Toogood, Matthew John. "Studies of the chemistry of plasmas used for semiconductor etching." Thesis, University of Oxford, 1991. http://ora.ox.ac.uk/objects/uuid:e234bbaa-d6e6-4ac8-a3dd-aa9a2c1b1e39.

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Optical diagnostic techniques have been developed and then used to investigate the chemistry of reactive species formed in CF<sub>4</sub> / O<sub>2</sub> rf parallel plate discharges, similar to those employed in semiconductor material processing. Oxygen atoms were detected by two photon laser induced fluorescence (LIF), and the technique was found to have a number of experimental caveats owing mainly to the high laser intensities required. In particular, amplified spontaneous emission (ASE), was observed from laser excitation of oxygen, and was found to influence the spontaneous fluorescence

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11

Edström, Curt. "Wet etching of optical thin films." Thesis, Tekniska Högskolan, Högskolan i Jönköping, JTH, Kemiteknik, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:hj:diva-13988.

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Evaluation of the wet etching properties of several different thin film oxidesgrown by physical vapour deposition was performed in this work. MgO, Al2O3,SiO2, TiO2, HfO2 ZrO2 and Y2O3 were coated on two types of substrates; Si andborosilicate glass and etching tests were performed in different etchingsolutions. MgF2 thin films have also been evaluated. Important aspects of the choice of the thin films was taken into account in orderto match to good optical properties such as refractive index (n), extinction coefficient (k) and optical thickness (TP) as well as good chemical properties in the w

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12

Chen, Hsin-Yi. "Inductively coupled plasma etching of InP." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape4/PQDD_0021/MQ54126.pdf.

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13

Ganguli, Satyajit Nimu. "A kinetic study of chromium etching /." Thesis, McGill University, 1988. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=63943.

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14

Artoni, Pietro. "Silicon Nanowires by Metal Assisted Etching." Doctoral thesis, Università di Catania, 2013. http://hdl.handle.net/10761/1431.

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Group-IV semiconductor nanowires (NWs) are attracting interest among the scientific community as building blocks for future nanoscaled devices. Different techniques are currently used for Si NWs preparation, the bottom-up vapor-liquid-solid (VLS) mechanism or the top-down approach which uses the electron beam lithography (EBL). Moreover, literature shows that in the last few years Metal-assisted chemical etching (MACEtch) has become a powerful technique to obtain high density and low-cost Si NWs with high and controllable aspect ratio. It consists of an etching of a Si substrate in a solution

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15

Heinrich, David Klinger Max. "Max Klinger's Intermezzi : a critical analysis /." Title page, contents and abstract only, 2002. http://web4.library.adelaide.edu.au/theses/09ARM/09armh469.pdf.

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16

Steiner, Pinckney Alston IV. "Anisotropic low-energy electron-enhanced etching of semiconductors in DC plasma." Thesis, Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/27060.

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17

Perng, John Kangchun. "High Aspect-Ratio Nanoscale Etching in Silicon using Electron Beam Lithography and Deep Reactive Ion Etching (DRIE) Technique." Thesis, Georgia Institute of Technology, 2006. http://hdl.handle.net/1853/11543.

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This thesis reports the characterization and development of nanolithography using Electron Beam Lithography system and nanoscale plasma etching. The standard Bosch process and a modified three-pulse Bosch process were developed in STS ICP and Plasma ICP system separately. The limit of the Bosch process at the nanoscale regime was investigated and documented. Furthermore, the effect of different control parameters on the process were studied and summarized in this report. 28nm-wide trench with aspect-ratio of 25 (smallest trench), and 50nm-wide trench with aspect ratio of 37 (highest aspect-rat

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18

Pal, P., K. Sato, M. A. Gosalvez, M. Shikida, and 一雄佐藤. "An improved anisotropic wet etching process for the fabrication of silicon MEMS structures using a single etching mask." IEEE, 2008. http://hdl.handle.net/2237/11137.

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19

Krautschik, Christof Gabriel 1957. "Impedance determination of a RF plasma discharge by external measurements." Thesis, The University of Arizona, 1989. http://hdl.handle.net/10150/277141.

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The equivalent impedance of a RF plasma was experimentally determined by monitoring the voltage and current waveform for different input powers in real time. Average ion energies and fluxes were determined by a computer model which takes ion collisions in the sheath regions into account. In addition two models were proposed which explain how RF energy is converted to DC potential energy in the sheath. Etch rates of Si in a CF₄ discharge were also evaluated and related to the measurements.

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20

Morris, Bryan George Oneal. "In situ monitoring of reactive ion etching." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31688.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010.<br>Committee Chair: May, Gary; Committee Member: Brand,Oliver; Committee Member: Hasler,Paul; Committee Member: Kohl,Paul; Committee Member: Shamma,Jeff. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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21

Carlström, Carl-Fredrik. "Ion beam etching of InP based materials." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3160.

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<p>Dry etching is an important technique for pattern transferin fabrication of most opto-electronic devices, since it canprovide good control of both structure size and shape even on asub-micron scale. Unfortunately, this process step may causedamage to the material which is detrimental to deviceperformance. It is therefore an objective of this thesis todevelop and investigate low damage etching processes for InPbased devices.</p><p>An ion beam system in combination with hydrocarbon (CH<sub>4</sub>) based chemistries is used for etching. At variousion energies and gas flows the etching is perf

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22

Mörsdorf, Alexander. "Metal-assisted etching of nanopores in silicon." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-177359.

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Nanoporous membranes are an interesting approach to manufacture a variety of devices for different applications. For example in biomedicine the separation of molecules or cells or the sequence-based analysis of single-stranded DNA are of great interest. Based on silicon membranes, a promising method to achieve pores with a high aspect ratio is metal-assisted etching, where noble metal particles serve as catalysts for the oxidation of the underneath Si, which is subsequently removed by hydrofluoric acid. This thesis project deals with developing a method, based on wet chemical etching of nanopo

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23

Bahreyni, Behraad. "Deep etching of silicon with xenon difluoride." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/MQ62689.pdf.

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24

Zhu, Hongbin. "Control of Plasma Etching of Semiconductor Surfaces." Diss., Tucson, Arizona : University of Arizona, 2005. http://etd.library.arizona.edu/etd/GetFileServlet?file=file:///data1/pdf/etd/azu%5Fetd%5F1354%5F1%5Fm.pdf&type=application/pdf.

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25

Montano, Gerardo. "Gas Phase Etching of Silicon Dioxide Films." Diss., Tucson, Arizona : University of Arizona, 2006. http://etd.library.arizona.edu/etd/GetFileServlet?file=file:///data1/pdf/etd/azu%5Fetd%5F1453%5F1%5Fm.pdf&type=application/pdf.

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26

Carlström, Carl-Fredrik. "Ion beam etching of InP based materials /." Stockholm, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3160.

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27

Jamali, Arash. "Etching of wood by glow-discharge plasma." Thesis, University of British Columbia, 2011. http://hdl.handle.net/2429/39882.

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In this thesis I hypothesize that plasma will etch wood surfaces, produce new cell wall microstructures, and change the surface chemistry of wood because of differential etching of wood’s polymeric constituents. I also examine factors affecting the etching of wood by plasma, and applications of plasma etching for wood processing. Scanning electron and light microscopy and white light confocal profilometry were used to examine etching of wood surfaces. Wet chemical analysis, FTIR and XPS spectroscopy were used to analyze chemical changes at the surface of plasma-treated wood. Experiments were a

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28

Flake, John Christopher. "Photoelectrochemical etching of silicon in nonaqeous electrolytes." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/13278.

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29

Duan, Xuefeng 1981. "Microfabrication : using bulk wet etching with TMAH." Thesis, McGill University, 2005. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=97942.

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In November 2002 a Microfabrication Lab was established in the physics department of McGill University to support research in nanoscience and technology. At the same time, I arrived at McGill to begin my graduate study. So I was assigned to do research on microfabrication, especially bulk wet etching of silicon using TetraMethyl Ammonium Hydroxide (TMAH).<br>The content of microfabrication is quite broad, and also very useful in both industry and academic. Since our fab is a newly built one and I had no experience in this area before, this thesis mainly included some basic processes in microfa

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30

Ashraf, Huma. "Anisotropic etching of silicon using SF6 plasmas." Thesis, Imperial College London, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.404383.

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31

Banks, Peter Michael. "Dry etching and materials in semiconductor fabrication." Thesis, University of Oxford, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.236122.

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32

Sucksmith, John Peter. "Studies of plasmas used for semiconductor etching." Thesis, University of Oxford, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.335818.

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33

Schudel, David. "The pulsed laser etching of polymer films." Thesis, University of Hull, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.259790.

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34

Chan, Kwong. "Physical and chemical etching of textile materials." Thesis, University of Salford, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305646.

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35

Tissington, Bryan. "Surface etching studies of highly drawn polyethylenes." Thesis, University of Leeds, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.396422.

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36

Krueger, Charles Winslow. "Chemical vapor etching of GaAs by CH3I." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/37507.

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37

Pruette, Laura C. (Laura Catherine) 1974. "Non-perfluorocompound chemistries for dielectric etching applications." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/50031.

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38

Goodlin, Brian E. 1974. "Multivariate endpoint detection of plasma etching processes." Thesis, Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/8498.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2002.<br>Includes bibliographical references.<br>In plasma etching process it is critical to know when the film being etched has cleared to the underlying film, i.e. to detect endpoint, in order to achieve the desired device performance in the resulting integrated circuit. The most highly utilized sensor technology for determining endpoint has historically been optical emission spectroscopy (OES), because it is both non-invasive and highly sensitive to chemical changes in the reactor. Historically, the intens

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39

Pugh, C. J. "End point detection in reactive ion etching." Thesis, University College London (University of London), 2013. http://discovery.ucl.ac.uk/1398304/.

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End-point detection for deep reactive ion etch of silicon in the semiconductor industry has been investigated with a focus on statistical treatments on optical emission spectroscopy. The data reduction technique Principal components analysis (PCA) has been briefly reviewed and analysed as an introduction to independent component analysis (ICA). ICA is a computational dimension reduction technique capable of separating multivariate data into single components. In this instance PCA and ICA are used in to combine the spectral channels of optical emission spectroscopy of plasma processes into a re

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40

Yildirim, Alper. "Development Of A Micro-fabrication Process Simulator For Micro-electro-mechanical-systems(mems)." Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/12606850/index.pdf.

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ABSTRACT DEVELOPMENT OF A MICRO-FABRICATION PROCESS SIMULATOR FOR MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) Yildirim, Alper M.S, Department of Mechanical Engineering Supervisor: Asst. Prof. Dr. Melik D&ouml<br>len December 2005, 140 pages The aim of this study is to devise a computer simulation tool, which will speed-up the design of Micro-Electro-Mechanical Systems by providing the results of the micro-fabrication processes in advance. Anisotropic etching along with isotropic etching of silicon wafers are to be simulated in this environment. Similarly, additive processes like do

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41

Özel, Mehmet Ozan [Verfasser]. "Entstehung von White Etching Areas und White Etching Cracks als Folge der Wälzbeanspruchung im Stahl 100Cr6 / Mehmet Ozan Özel." Aachen : Shaker, 2018. http://d-nb.info/1186590483/34.

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42

Rieger, Melissa Marie. "The electrochemical etching of silicon in nonaqueous solutions." Diss., Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/10214.

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43

Hendricks, Douglas Ray 1958. "REACTIVE ION ETCHING OF GALLIUM-ARSENIDE AND ALUMINUM-GALLIUM - ARSENIDE USING BORON TRICHLORIDE AND CHLORINE." Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276394.

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44

Pournik, Maysam. "Laboratory-scale fracture conductivity created by acid etching." [College Station, Tex. : Texas A&M University, 2008. http://hdl.handle.net/1969.1/ETD-TAMU-2361.

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45

Smith, Scott Alan. "INDUCTIVELY COUPLED PLASMA ETCHING OF III-N SEMICONDUCTORS." NCSU, 2002. http://www.lib.ncsu.edu/theses/available/etd-05082002-162142/.

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The principal focus of this research was the employment of an in-house designed and constructed inductively coupled plasma (ICP) system for integrated studies pertaining to the etching rates and etching selectivity among AlN, GaN, and Al(x)Ga(1-x)N. An (ICP) system was chosen because of its high plasma density and low cost relative to other high-density plasma etching systems. The etch rates were studied as a function of ICP power, pressure, DC bias, and gas composition. The use of a mixture of 2 sccm BCl3 and 18 sccm Cl2 resulted in a maximum etch rate of 2.2 microns/min for GaN as well as ne

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46

Ning, Rong-Chun, and 甯榮椿. "Etching of SixNy and TiN Usning Inductively-Coupled Plasma Reactive Ion Etching: Study of Selectivity and Etching Rate of TiN with SC1 Wet Etching." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/06657099658319035261.

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碩士<br>國立清華大學<br>材料科學工程學系<br>98<br>In order to make the lightly doped drain region structure Ⅲ-Ⅴ MOSFET self-aligned process well-controlled, information about dry etching and wet etching must be investigated. In this thesis, the dry etching of PECVD-SixNy and sputtered TiN was performed with inductively-coupled plasma reactive ion etching system to ascertain the etching rates and selectivity of SixNy to TiN. Wet etching rates of sputtered TiN, in-situ ALD-Al2O3, PECVD-SixNy with SC1 solution were also demonstrated. With the etching chemistry CHF3/O2 whose flow rate was 20/10 SCCM, the highest

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47

Ueng, Shih-Yuan, and 翁士元. "Study of Etching Damages Induced by Reactive-Ion-Etching and Electron Cyclotron Resonance Etching on the Silicon Substrates." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/54938753342994590641.

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博士<br>國立交通大學<br>電子研究所<br>83<br>In this thesis, we study the properties of thin oxides thermally grown on reactive-ion-etched (RIE) silicon substrates in N2O and diluted O2 ambient. The interface microroughness is strongly dependent on the RIE conditions and the post etching treatments. Furthermore, using the after-treatment-chamber (ATC) process, CF4 addition in the O2 plasma can further improve the time-zero-to-dielectric-breakdown (TZDB) characteristics of the thin oxides as compared with

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48

Chuang, Tzung-po, and 莊宗伯. "Dry etching of AlGaInP by using inductively coupled plasma etching system." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/00039324014727801283.

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碩士<br>國立交通大學<br>電子物理系<br>88<br>In this thesis, we study the dry etch of the AlGaInP by using inductively coupled plasma (ICP) etching system. In this study, we use Cl2 and BCl3 as the etching gases. According to the etching results, when the mix ratio is 1:1, we can get the maximum etching rate. Because of indium component in the sample, the resulting product InClx which is involatile and adsorptive on the sample surface leads to a cease of etching. In order to minimize the InClx, we add the CH4 gas in the process to produce the In(CH3)3 compound which is much more volatile. Meanwhile, CH4 wi

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49

陳美戎. "Dry etching of GaN by using inductively coupled plasma etching system." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/31141891547563392048.

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碩士<br>國立交通大學<br>電子物理系<br>89<br>In this thesis, we used inductively coupled plasma (ICP) etching system to etch GaN thin films and studied the effect of various experimental factors controlling the etching process. GaN-based semiconductor has been widely used for the fabrication of light-emitting diodes (LED), laser diodes (LD), and UV detectors on the photonic application and microwave power switches on the electronics application. The plasma etching technique has become the major patterning technique for the group-III nitrides due to the shortcomings in wet chemical etching. The dry etch char

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Lin, Chi Hsing, and 林集祥. "Research on Etching rate Improvement for Reactive-Ion-Etching in TFT-LCD." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/21242900157113307939.

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碩士<br>國立交通大學<br>平面顯示技術碩士學位學程<br>100<br>Plasma technology has already widely been used in the TFT LCD panel manufacturing process. Such as dry etching, thin films deposited, and stripper…etc. Those are related to Plasma technology. The advantage of dry etching is well controlled in microstructure. Taiwan has the advantage in semiconductor manufacture and knowledge. With the strong foundation and know-how that could smoothly transferred to the TFT LCD manufacturing process and lead to well-controlled in the line width, depth-width ratio (aspect ratio), surface roughness, via angle control…et

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