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Статті в журналах з теми "Etching"

Автор: Grafiati

Опубліковано: 4 червня 2021

Оновлено: 25 липня 2025

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1

Çakır, Orhan. "Study of Etch Rate and Surface Roughness in Chemical Etching of Stainless Steel." Key Engineering Materials 364-366 (December 2007): 837–42. http://dx.doi.org/10.4028/www.scientific.net/kem.364-366.837.

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Анотація:

In this study, stainless steel material (X5CrNi1810) was micromachined by chemical etching method. Ferric chloride was selected as etchant which is the most widely used etchant for iron-based materials. Four different etchant concentrations (32 °Bé, 36 °Bé, 40 °Bé and 44 °Bé) were used at various etching temperature. Moreover, the influence of the addition of hydrochloric acid to main etchant on etching performance was examined. The aim of this study was to investigate the depth of etch and surface roughness affected by etchant concentration, hydrochloric acid addition and etching temperature.

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2

Chabanon, Angélique, Alexandre Michau, Michel Léon Schlegel, et al. "Surface Modification of 304L Stainless Steel and Interface Engineering by HiPIMS Pre-Treatment." Coatings 12, no. 6 (2022): 727. http://dx.doi.org/10.3390/coatings12060727.

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Анотація:

A clean and defect-free substrate/coating interface is required to guarantee good adhesion of coatings under service conditions. For this purpose, an etching pre-treatment using High-Power Impulse Magnetron Sputtering (HiPIMS) was performed to modify the surface of 304L stainless steel. The effect of three etching procedures on the substrate properties, such as corrosion resistance and adhesion, was investigated with unprecedented spatial resolution and spectroscopic details. Glancing angle X-ray diffraction showed modification in phase content but no neoformation after steel etching. X-ray ph

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3

Hvozdiyevskyi, Ye Ye, R. O. Denysyuk, V. M. Tomashyk, G. P. Malanych, Z. F. Tomashyk Tomashyk та A. A. Korchovyi. "Chemical-mechanical polishing of CdTe and based on its solid solutions single crystals using HNO3 + НІ + ethylene glycol iodine-emerging solutions". Chernivtsi University Scientific Herald. Chemistry, № 819 (2019): 45–49. http://dx.doi.org/10.31861/chem-2019-819-07.

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The interaction of the CdTe and Zn0.04Cd0.96Te, Cd0.2Hg0.8Te solid solutions single crystals with the iodine-emerging etchings based on aqueous solutions of HNO3 + НІ + ethylene glycol has been investigated and etching compositions have been developed and optimized, as well as methods of their chemical treatment for the formation of high-quality surface. The dissolution of these semiconductor materials in the aqueous solutions of the (HNO3+HI+EG)/EG have been investigated and dependences “etchant composition – etching rate” with determining the regions of polishing and unpolishing solutions ha

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4

Li, Hao, Yong You Geng, and Yi Qun Wu. "Selective Wet Etching Characteristics of Aginsbte Phase Change Film with Ammonium Sulfide Solution." Advanced Materials Research 529 (June 2012): 388–93. http://dx.doi.org/10.4028/www.scientific.net/amr.529.388.

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The selective wet etching characteristics of AgInSbTe film as a new thermal lithography material were studied with ammonium sulfide solution as etchant. Influences of vacuum-annealing temperature, etchant concentration and wet etching time on selective wet etching characteristics of the amorphous and crystalline AgInSbTe films were investigated. Experimental results indicated that the etching rate of AgInSbTe film increased with the enhancement of crystallization extent, and the etching rate of crystalline state AgInSbTe film annealed at 300°C was 35nm/min in 17wt% ammonium sulfide solution, a

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5

Pashchenko, G. A., M. J. Kravetsky, and O. V. Fomin. "Singularities of Polishing Substrates GaAs by Chemo-Dynamical and Non-Contact Chemo-Mechanical Methods." Фізика і хімія твердого тіла 16, no. 3 (2015): 560–64. http://dx.doi.org/10.15330/pcss.16.3.560-564.

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The comparative investigation of two chemical polishing methods as applied to GaAs substrates is carried out. In both cases the equal etchant Br2+HBr was used. The comparison of etching rates and of surface morphology is carried out. It is revealed that numerous etching pits arise during chemo-dynamical polishing of GaAs (111) В samples but not arise during non-contact chemo-mechanical polishing of the same samples. Besides, last method allows to raise appreciably etching rate as compared with the method of chemo-dynamical polishing. That is, the same etchant behaves as selective or polishing

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6

Misal, Nitin D., and Mudigonda Sadaiah. "Investigation on Surface Roughness of Inconel 718 in Photochemical Machining." Advances in Materials Science and Engineering 2017 (2017): 1–9. http://dx.doi.org/10.1155/2017/3247873.

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Анотація:

The present work is focused on estimating the optimal machining parameters required for photochemical machining (PCM) of an Inconel 718 and effects of these parameters on surface topology. An experimental analysis was carried out to identify optimal values of parameters using ferric chloride (FeCl3) as an etchant. The parameters considered in this analysis are concentration of etchant, etching time, and etchant temperature. The experimental analysis shows that etching performance as well as surface topology improved by appropriate selection of etching process parameters. Temperature of the etc

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7

Alias, Ezzah Azimah, Muhammad Esmed Alif Samsudin, Steven DenBaars, James Speck, Shuji Nakamura, and Norzaini Zainal. "N-face GaN substrate roughening for improved performance GaN-on-GaN LED." Microelectronics International 38, no. 3 (2021): 93–98. http://dx.doi.org/10.1108/mi-02-2021-0011.

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Анотація:

Purpose This study aims to focus on roughening N-face (backside) GaN substrate prior to GaN-on-GaN light-emitting diode (LED) growth as an attempt to improve the LED performance. Design/methodology/approach The N-face of GaN substrate was roughened by three different etchants; ammonium hydroxide (NH4OH), a mixture of NH4OH and H2O2 (NH4OH: H2O2) and potassium hydroxide (KOH). Hexagonal pyramids were successfully formed on the surface when the substrate was subjected to the etching in all cases. Findings Under 30 min of etching, the highest density of pyramids was obtained by NH4OH: H2O2 etchin

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8

Nadira, Mahamood K., and V. Prakash. "A Study on Surface Chemical Behaviour of Solid State Nuclear Track Detector Films by Etching." Pearl Multidisciplinary Journal 6, no. 1 (2020): 3–8. https://doi.org/10.5281/zenodo.3688893.

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Анотація:

The etching is a process of modifying the flat smooth surface to identify the structure, phases, and other effects such as the orientation of grains, deformation and distribution of solute elements.  Due to the chemical reaction between the etchant and the detector material, some molecules of the detectors are removed.  The etchant used for LR-115 detectors in the present study is aqueous NaOH solution with 2.5 N.  The bulk etch rate has been estimated by varying the etching time, keeping the etching temperature constant. It has seen that, the bulk etch rate remai

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9

Tellier, C. R., T. G. Leblois, and A. Charbonnieras. "Chemical Etching of {hk0} Silicon Plates in EDP Part I: Experiments and Comparison with TMAH." Active and Passive Electronic Components 23, no. 1 (2000): 37–51. http://dx.doi.org/10.1155/apec.23.37.

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This paper deals with the anisotropic chemical etching of various silicon plates etched in EDP. Changes with orientation in geometrical features of etched surface and in the etching shape of starting circular sections are systematically investigated. These etching shapes are compared with shapes produced by etching in KOH and TMAH solutions; This experimental study allows us to determine the dissolution slowness surface for the EDP solution and to investigate the real influence of the etchant on two dimensional and three dimensional etching shapes.

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10

Zunic, Zora, Predrag Ujic, Igor Celikovic, and Kenzo Fujimoto. "ECE laboratory in the Vinca institute: Its basic characteristics and fundamentals of electrochemic etching on polycarbonate." Nuclear Technology and Radiation Protection 18, no. 2 (2003): 57–60. http://dx.doi.org/10.2298/ntrp0302057z.

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This paper deals with the introductory aspects of the Electrochemical Etching Laboratory installed at the VINCA Institute in the year 2003. The main purpose of the laboratory is its field application for radon and thoron large-scale survey using passive radon/thoron UFO type detectors. Since the etching techniques together with the laboratory equipment were transferred from the National Institute of Radiological Sciences, Chiba, Japan, it was necessary for both etching conditions to be confirmed and to be checked up^ i. e., bulk etching speeds of chemical etching and electrochemical etching in

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11

Park, Tae Gun, Jong Won Han, and Sang Woo Lim. "Selective Si<sub>3</sub>N<sub>4</sub> Etching for 3D NAND Integration by Using Low Concentration of H<sub>3</sub>PO<sub>4</sub>." Solid State Phenomena 346 (August 14, 2023): 137–42. http://dx.doi.org/10.4028/p-0pjfvo.

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This study investigated the etching kinetics of Si3N4 in various concentration of H3PO4 solution and the effect of Si3N4 etching enhancers on the etching process, particularly for 3D NAND trench structures. 30 wt% H3PO4 was used to etch Si3N4, which can produce higher Si3N4/SiO2 etching selectivity and similar Si3N4 etching rate compared to a conventional 85 wt% H3PO4. 30 wt% H3PO4 showed significantly improved etching performance for the Si3N4/SiO2 3D NAND structure as compared to 85 wt% H3PO4. In particular, the transportation ability of H3PO4 into 3D NAND trench structures can be improved b

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12

Wang, Qi, Kehong Zhou, Shuai Zhao, et al. "Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array." Nanomaterials 11, no. 12 (2021): 3179. http://dx.doi.org/10.3390/nano11123179.

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Анотація:

Realizing the anisotropic deep trenching of GaN without surface damage is essential for the fabrication of GaN-based devices. However, traditional dry etching technologies introduce irreversible damage to GaN and degrade the performance of the device. In this paper, we demonstrate a damage-free, rapid metal-assisted chemical etching (MacEtch) method and perform an anisotropic, deep trenching of a GaN array. Regular GaN microarrays are fabricated based on the proposed method, in which CuSO4 and HF are adopted as etchants while ultraviolet light and Ni/Ag mask are applied to catalyze the etching

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13

Liu, Zhuang, Lin Zhu, Jing Lin, and Zhi Hui Sun. "Study of Super Hydrophobic Films on Pre-Sensitized Plate Aluminium Substrate." Applied Mechanics and Materials 200 (October 2012): 427–29. http://dx.doi.org/10.4028/www.scientific.net/amm.200.427.

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Анотація:

A simple chemical etching method was developed for corrosion of the pre-sensitized plate aluminium substrate in order to be a rough surface. After the chemical etched surface was treated with fluorination, the pre-sensitized (PS) plate aluminium (Al) substrate surface exhibits a super-hydrophobic property. The effects of the etching time and the etchant concentration on the super-hydrophobici were investigated, and the results show the contact angle of hydrofluoric firstly increases then reduce with acid etching time increasing, and the optimum etching time is 12 min; the contact angle of hydr

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14

Ambrož, O., J. Čermák, P. Jozefovič, and Š. Mikmeková. "Automated color etching of aluminum alloys." Practical Metallography 59, no. 8-9 (2022): 459–74. http://dx.doi.org/10.1515/pm-2022-1014.

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Abstract Color metallography of aluminum alloys can provide new structural knowledge or extend and refine structural knowledge compared to a black and white image. The basic principle of color metallography is to create a suitable film by etching. On samples coated with a suitable film, light interference is caused by the splitting of the incident light into components reflected at the air-layer interface and the layer-metal interface. The thickness of the film essentially determines at which colors the interference occurs. For films of suitable thickness, interference occurs in the blue, gree

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15

Ambrož, O., J. Čermák, P. Jozefovič, and Š. Mikmeková. "Effects of etchant stirring on the surface quality of the metallography sample." Journal of Physics: Conference Series 2572, no. 1 (2023): 012011. http://dx.doi.org/10.1088/1742-6596/2572/1/012011.

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Abstract Despite its predominantly empirical nature, metallographic etching remains an important sample preparation method that enables microstructural characterization. The poor repeatability is due to the ignorance of etching mechanisms and the human factor, which is mainly associated with the conventional approach. This approach is most commonly practiced by manual immersion of the sample in the etchant. The solution should be gently stirred so that reaction products do not settle on the surface and uneven etching does not occur. Often, stirring is provided by the sample itself or by a magn

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16

Kim, Dong Hyeon, Chanwoo Lee, Byeong Geun Jeong, Sung Hyuk Kim, and Mun Seok Jeong. "Fabrication of highly uniform nanoprobe via the automated process for tip-enhanced Raman spectroscopy." Nanophotonics 9, no. 9 (2020): 2989–96. http://dx.doi.org/10.1515/nanoph-2020-0210.

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AbstractIn a tip-enhanced Raman spectroscopy (TERS) system, using a sharp nanotip that comprises a noble metal is critical to attaining high spatial resolution and highly enhanced Raman scattering. A strongly acidic solution is typically used to fabricate gold nanotips in a quick and reliable manner. However, using an acidic solution could corrode the etching system, thereby posing hazardous problems. Therefore, both the corrosion of the etching system and human error induced by the conventional method considerably decrease the quality and reproducibility of the tip. In this study, we signific

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17

Jin, Dahee, Ju-Myung Kim, Ran Yi, and Ji-Guang Zhang. "A New Approach to Synthesis of Porous Si Anode for Li-Ion Batteries Via Organic-Solvent Assisted Etching." ECS Meeting Abstracts MA2024-02, no. 5 (2024): 570. https://doi.org/10.1149/ma2024-025570mtgabs.

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Анотація:

Silicon (Si) has been regarded as a promising anode for Li-ion batteries due to its high theoretical capacity (4200 mAh/g) compared to graphite anode (372 mAh/g). However, it undergoes significant volume changes (~ 300%) during lithiation and delithiation, leading to particle pulverization and continuous electrolyte decomposition on Si surface, which hinders its practical application. The porous silicon obtained by wet etching method using hydrogen fluoride (HF) can accommodate the volume changes and improve the overall performance of silicon anodes. However, HF etching is highly corrosive, le

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18

Ting, Huey Tze, Khaled A. Abou-El-Hossein, and Han Bing Chua. "Etch Rate and Dimensional Accuracy of Machinable Glass Ceramics in Chemical Etching." Advances in Science and Technology 65 (October 2010): 251–56. http://dx.doi.org/10.4028/www.scientific.net/ast.65.251.

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Анотація:

Machinable glass ceramic (MGC) is well known in the micro-electromechanical system and semiconductor industry. Chemical etching is used in this experiment to study the performance of MGC. The etching rate of MGC and its accuracy by indentation method is studied. The categoric parameter applied here is the type of chemical etchant used: hydrochloric (HCl), hydrophosphoric (H3PO4) and hydrobromic (HBr) acids; and, numerical parameters are etching temperature and etching solution. The experimental investigation that was carried out is governed by design of experiment (DoE).

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19

Barbato, Pasquale, Roberto Osellame, and Rebeca Martínez Vázquez. "Nanochannels in Fused Silica through NaOH Etching Assisted by Femtosecond Laser Irradiation." Materials 17, no. 19 (2024): 4906. http://dx.doi.org/10.3390/ma17194906.

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Sodium hydroxide (NaOH) is increasingly drawing attention as a highly selective etchant for femtosecond laser-modified fused silica. Unprecedented etching contrasts between the irradiated and pristine areas have enabled the fabrication of hollow, high-aspect-ratio structures in the bulk of the material, overcoming the micrometer threshold as the minimum feature size. In this work, we systematically study the effect of NaOH solutions under different etching conditions (etchant concentration, temperature, and etching time) on the tracks created by tightly focused femtosecond laser pulses to asse

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20

Schnarr, H. "Less is sometimes more – some examples of the reduction of hazardous substances in metallographic etching." Practical Metallography 61, no. 7 (2024): 420–46. http://dx.doi.org/10.1515/pm-2024-0038.

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Abstract In metallography, the choice of the right etchant is crucial for visualizing the microstructure. As conventional etching agents generally contain a more or less high proportion of hazardous substances that need to be reduced in the future, examples are given of how this reduction is possible in principle. This reduction in hazardous substances is mainly achieved through microscopy contrasts, dilution of etching solutions and electrolytic etching.

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21

Hao, Yuhua, and Xia Wang. "Effects of the Photoelectrochemical Etching in Hydrogen Fluride (HF) on the Optoelectrical Properties of Ga₂O₃." Journal of Physics: Conference Series 2112, no. 1 (2021): 012006. http://dx.doi.org/10.1088/1742-6596/2112/1/012006.

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Abstract Photoelectrochemical (PEC) etching is preferred to produce micro-and nano-structures for constructing Ga2O3-based electronics and optoelectronics, owing to its numerous controllable parameters. During the devices fabrications, beyond the wet chemical and dry (plasma) etching produces, PEC etching also leads to device degradations inordinately. In this work, the Ga2O3 thin film was PEC etched by hydrogen fluride (HF) etchant, and its opto-electric deep-ultraviolet sensing performances, including photo-to-dark current ratio, responsivity, and response speed, before and after PEC etching

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22

Yusoh, Siti Noorhaniah, and Khatijah Aisha Yaacob. "Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography." Beilstein Journal of Nanotechnology 7 (October 17, 2016): 1461–70. http://dx.doi.org/10.3762/bjnano.7.138.

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The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different IPA concentrations (0, 10, 20, and 30 vol %) and etching time durations (30, 40, and 50 s) were investigated. The relationships between etching depth and width, and etching rate and surface roughness of silicon nanowires were characterized in detail using atomic force microscopy (AFM). The obtained r

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23

Yao, Yong Zhao, Yukari Ishikawa, Yoshihiro Sugawara, et al. "Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na₂O₂ Additive." Materials Science Forum 679-680 (March 2011): 290–93. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.290.

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We have proposed a new wet etching recipe using molten KOH and Na2O2 as the etchant (“KN etching”) for dislocation revelation in highly doped n-type 4H-SiC (n+-4H-SiC). Threading screw dislocations (TSDs) and threading edge dislocations (TEDs) have been clearly revealed as hexagonal etch pits differing in pit sizes, and basal plane dislocations (BPDs) as seashell-shaped pits. This new etching recipe has provided a solution to the problem that conventional KOH etching is not effective for dislocation identification in 4H-SiC if the electron concentration is high (>mid-1018 cm-3). We have inv

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24

Son, Chang Jin, Taeh Yeon Kim, Tae Gun Park, and Sang Woo Lim. "Is Highly Selective Si₃N₄/SiO₂ Etching Feasible without Phosphoric Acid?" Solid State Phenomena 282 (August 2018): 147–51. http://dx.doi.org/10.4028/www.scientific.net/ssp.282.147.

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Si3N4 film could be selectively removed by a special H3PO4-free etchant. In order to increase Si3N4 etching rate and Si3N4/SiO2 etch selectivity, various additives were added to H3PO4-free etchant. The optimization of additives into H3PO4-free solution, a comparable Si3N4 etching rate with 50 times increased Si3N4/SiO2 etch selectivity was obtained as compared to the conventional H3PO4 process.

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25

Ueda, Dai, Yousuke Hanawa, Hiroaki Kitagawa, et al. "Effect of Hydrophobicity and Surface Potential of Silicon on SiO₂ Etching in Nanometer-Sized Narrow Spaces." Solid State Phenomena 314 (February 2021): 155–60. http://dx.doi.org/10.4028/www.scientific.net/ssp.314.155.

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Wet etching in nanometer-sized three-dimensional spaces creates new challengesbecause of the scaling of semiconductor devices with complex 3D architecture. Wet etching withinspaces is affected by the mass transport of the etchant ions that are impacted by the hydrophobicityand surface potential of surface. However, the kinetics of chemical reactions within the spaces is stillunclear.In this paper, we studied the effect of hydrophobicity and surface potential of silicon surface on SiO2etching in nanometer-sized narrow spaces by adding various additive components to etching solutions.We found th

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26

Fang, Jinyang, Qingke Zhang, Xinli Zhang, et al. "Influence of Etchants on Etched Surfaces of High-Strength and High-Conductivity Cu Alloy of Different Processing States." Materials 17, no. 9 (2024): 1966. http://dx.doi.org/10.3390/ma17091966.

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With the continuous integration of semiconductor devices, the requirements of the size accuracy and surface quality of etched lead frames are stricter. The etchant is a key factor in the etching process and etched surface quality, while the effects of the difference in etchants on the etched surface morphology of Cu alloy have not been directly studied. In this study, aqua regia, acidic FeCl3 and two CuCl2 solutions were used as etchants, and different CuCrSn specimens were etched and characterized. The results show that the etching rate in aqua regia is high, and the grain orientation, grain

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27

Amirabadi, Hossein, and M. Rakhshkhorshid. "An Analytical Model for Chemical Etching in One Dimensional Space." Advanced Materials Research 445 (January 2012): 167–70. http://dx.doi.org/10.4028/www.scientific.net/amr.445.167.

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In this paper an analytical model for chemical etching in one dimensional space has been presented. Regarding to the special specifications of Ferric chloride, etching of an Aluminum work piece exposed to Ferric chloride etchant has been modeled. The proposed model shows that, in the condition of constant reaction parameters, etching rate is a linear function of time. Excellent agreement between the proposed model and the experimental results, published by Çakır (2008), validates the model. By generalization the proposed model, etching rate, or in the other word depth of etch in a specified ti

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28

Li, Liyi, Colin M. Holmes, Jinho Hah, Owen J. Hildreth, and Ching P. Wong. "Uniform Metal-assisted Chemical Etching and the Stability of Catalysts." MRS Proceedings 1801 (2015): 1–8. http://dx.doi.org/10.1557/opl.2015.574.

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ABSTRACTRecently, metal-assisted chemical etching (MaCE) has been demonstrated as a promising technology in fabrication of uniform high-aspect-ratio (HAR) micro- and nanostructures on silicon substrates. In this work, MaCE experiments on 2 μm-wide line patterns were conducted using Au or Ag as catalysts. The performance of the two catalysts show sharp contrast. In MaCE with Au, a HAR trench was formed with uniform geometry and vertical sidewall. In MaCE with Ag, shallow and tapered etching profiles were observed, which resembled the results from isotropic etching. The sidewall tapering phenome

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29

Lee, Jinhoon, and Sangwoo Lim. "Highly Efficient Si₃N₄/SiO₂ Selective Etching Process with Non-Phosphoric Acid Solutions." ECS Meeting Abstracts MA2024-02, no. 31 (2024): 2270. https://doi.org/10.1149/ma2024-02312270mtgabs.

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Анотація:

Silicon nitride (Si3N4) and silicon dioxide (SiO2) are widely used as insulator or sacrificial film materials in the fabrication of semiconductor devices. In recent years, many 3D structured semiconductor devices such as NAND Flash and CFETs have been manufactured to increase the integration of semiconductor devices. In this case, a substrate with alternating layers of Si3N4 and SiO2 is used, and the device is fabricated by selectively etching the Si3N4 layer and depositing a dielectric or metal in its place. Therefore, the technology for selectively etching Si3N4 from Si3N4/SiO2 stacked subst

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30

Rahim, Rosminazuin A., Badariah Bais, and Majlis Burhanuddin Yeop. "Simple Microcantilever Release Process of Silicon Piezoresistive Microcantilever Sensor Using Wet Etching." Applied Mechanics and Materials 660 (October 2014): 894–98. http://dx.doi.org/10.4028/www.scientific.net/amm.660.894.

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In this paper, a simple microcantilever release process using anisotropic wet etching is presented. The microcantilever release is conducted at the final stage of the fabrication of piezoresistive microcantilever sensor. Issues related to microcantilever release such as microscopic roughness and macroscopic roughness has been resolved using simple technique. By utilizing silicon oxide (SiO2) as the etch stop for the wet etching process, issues related to microscopic roughness can be eliminated. On the other hand, proper etching procedure with constant stirring of the etchant solution of KOH an

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31

Lee, Changjin, Ji-Eun Lee, Eun-Woo Jang, Ji-Hoon Kim, Jinsub Park, and Jea-Gun Park. "Effect of Polymer Type Additives in Selective Wet Etching of Si_1-XGe_x- to Si-Film to Enhance Etch Rate Selectivity." ECS Meeting Abstracts MA2024-02, no. 32 (2024): 2303. https://doi.org/10.1149/ma2024-02322303mtgabs.

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To extend the scalability of the logic transistor beyond the 3-nm process, the architecture of the metal-oxide-semiconductor field-effect transistor (MOSFET) has changed from FinFET to gate-all-around FET (GAAFET). In addition, to continue the scaling of MOSFET further, various concepts of nanosheet architecture devices, including GAAFET, Forksheet FET, and Complementary FET, have been vigorously researched. To fabricate nanosheet devices, releasing Si channels via selective etching of Si1-xGex- to Si-layer is a key process. However, during the selective etching of Si1-xGex- to Si-layer, simul

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32

Tu, Wei-Hsiang, Wen-Chang Chu, Chih-Kung Lee, Pei-Zen Chang, and Yuh-Chung Hu. "Effects of etching holes on complementary metal oxide semiconductor–microelectromechanical systems capacitive structure." Journal of Intelligent Material Systems and Structures 24, no. 3 (2012): 310–17. http://dx.doi.org/10.1177/1045389x12449917.

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Etching the large area of sacrificial layer under the microstructure to be released is a common method used in microelectromechanical systems technology. In order to completely release the microstructures, many etching holes are often required on the microstructure to enable the etchant to completely etch the sacrificial layer. However, the etching holes often alter the electromechanical properties of the micro devices, especially capacitive devices, because the fringe fields induced by the etching holes can significantly alter the electrical properties. This article is aimed at evaluating the

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33

Kikkawa, Yuki, Yuzan Suzuki, Kohei Saito, et al. "Alkali Wet Chemicals for Ru with Advanced Semiconductor Technology Nodes." Solid State Phenomena 346 (August 14, 2023): 325–30. http://dx.doi.org/10.4028/p-08chsp.

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Wet chemicals for ruthenium (Ru) etching are required for the formation of reliable Ru interconnects in advanced semiconductor technology nodes. In the present study, a novel alkali wet etchant, referred to as TK-1, has been developed in order to overcome issues with conventional Ru etchants, such as a low etch rate and the formation of toxic RuO4 gas. Regardless of the Ru deposition process, TK-1 exhibits a high Ru etching selectivity of greater than 100 relative to dielectric and liner materials. It also suppresses the production of RuO4 during the etching process. TK-1 has potential applica

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34

Wu, Bing-Rui, Sin-Liang Ou, Shih-Yung Lo, Hsin-Yuan Mao, Jhen-Yu Yang, and Dong-Sing Wuu. "Texture-Etched SnO2Glasses Applied to Silicon Thin-Film Solar Cells." Journal of Nanomaterials 2014 (2014): 1–9. http://dx.doi.org/10.1155/2014/907610.

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Transparent electrodes of tin dioxide (SnO2) on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum t

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35

Lamichhane, Shobha Kanta. "Experimental investigation on anisotropic surface properties of crystalline silicon." BIBECHANA 8 (January 15, 2012): 59–66. http://dx.doi.org/10.3126/bibechana.v8i0.4828.

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Anisotropic etching of silicon has been studied by wet potassium hydroxide (KOH) etchant with its variation of temperature and concentration. Results presented here are temperature dependent etch rate along the crystallographic orientations. The etching rate of the (111) surface family is of prime importance for microfabrication. However, the experimental values of the corresponding etch rate are often scattered and the etching mechanism of (111) remains unclear. Etching and activation energy are found to be consistently favorable with the thermal agitation for a given crystal plane. Study dem

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36

Ding, Jingxiu, Ruipeng Zhang, Yuchun Li, David Wei Zhang, and Hongliang Lu. "Investigation of a Macromolecular Additive on the Decrease of the Aluminum Horizontal Etching Rate in the Wet Etching Process." Metals 12, no. 5 (2022): 813. http://dx.doi.org/10.3390/met12050813.

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The effect of a macromolecular additive on the etching rate of aluminum (Al) horizontal etching in the wet process was investigated in this work. The horizontal etching in the Al wet etching process became more evident as the film Al becomes thicker. The proposed macromolecule additive, including polyethylene-polypropylene glycol, was added into the Al etchant solution to reduce the Al horizontal etching rate (ER). The undercut problem during metal patterning can then be improved. By using this method, the Al horizontal ER was reduced from 2.0 to 0.9 μm per minute and the selection ratio betwe

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37

Гармаш, В. И., В. Е. Земляков, В. И. Егоркин, А. В. Ковальчук та С. Ю. Шаповал. "Исследование влияния атомарного состава на скорость плазмохимического травления нитрида кремния в силовых транзисторах на основе AlGaN/GaN-гетероперехода". Физика и техника полупроводников 54, № 8 (2020): 748. http://dx.doi.org/10.21883/ftp.2020.08.49646.9398.

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The effect of atomic composition on the rate of plasma chemical etching of silicon nitride in power transistors based on an AlGaN / GaN heterojunction is studied. It is shown how the subsequent process of its plasma-chemical etching depends on the configuration of the incorporation of hydrogen impurity atoms into the molecular structure of the silicon nitride deposited in the plasma. The dependence of the etching rate on the parameters of the process (the working pressure in the chamber, the power of the plasma generator, the flow of working gases, the deposition temperature) is investigated.

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Wu, Ping, Xue Ping Xu, Ilya Zwieback, and John Hostetler. "Study of Etching Processes for SiC Defect Analysis." Materials Science Forum 897 (May 2017): 363–66. http://dx.doi.org/10.4028/www.scientific.net/msf.897.363.

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Анотація:

We investigated selective etching of SiC in molten KOH + NaOH + Na2O2 mixtures in application to defect analysis. Etch rate was measured as a function of etchant composition, temperature and other process variables. Optimal etching conditions were established for reliable differentiation between TSDs, TEDs, BPDs and stacking faults (SF).

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39

Rath, P., J. C. Chai, Y. C. Lam, V. M. Murukeshan, and H. Zheng. "A Total Concentration Fixed-Grid Method for Two-Dimensional Wet Chemical Etching." Journal of Heat Transfer 129, no. 4 (2006): 509–16. http://dx.doi.org/10.1115/1.2709654.

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A total concentration fixed-grid method is presented in this paper to model the two-dimensional wet chemical etching. Two limiting cases are discussed, namely—the diffusion-controlled etching and the reaction-controlled etching. A total concentration, which is the sum of the unreacted and the reacted etchant concentrations, is defined. Using this newly defined total concentration, the governing equation also contains the interface condition. A new update procedure for the reacted concentration is formulated. For demonstration, the finite-volume method is used to solve the governing equation wi

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40

Wilson, Sara M., Wen Lien, David P. Lee, and William J. Dunn. "Confocal microscope analysis of depth of etch between self-limiting and traditional etchant systems." Angle Orthodontist 87, no. 5 (2017): 766–73. http://dx.doi.org/10.2319/120816-880.1.

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ABSTRACT Objective: To see whether there is an advantage to using a self-limiting phosphoric acid etchant versus a traditional 34% phosphoric acid etchant for bonding by measuring the depth of etch at multiple time intervals. Materials and Methods: A total of 25 bovine teeth were mounted and etched on the facial surface with two different etchants: standard 34% phosphoric acid and a self-limiting 35% phosphoric acid etchant at varied time intervals of 15, 30, 60, 90, and 120 seconds. Teeth were scanned using a three-dimensional laser confocal scanning microscope prior to etching and scanned ag

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41

Yao, Yong Zhao, Yukari Ishikawa, Yoshihiro Sugawara, and Koji Sato. "Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC Wafers by Using Chemical Etching with Molten KCl+KOH." Materials Science Forum 778-780 (February 2014): 746–49. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.746.

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High temperature (>1000 °C) chemical etching using molten KCl or molten KCl+KOH as the etchant has been carried out to remove the mechanical-polishing (MP) induced damage layer from 4H-SiC surface. Atomic force microscopy observations have shown that line-shaped surface scratches that have appeared on the as-MPed surface could be completely removed by KCl-only etching or by KCl+KOH etching (KCl:KOH=99:1 in weight) at ~1100 °C. Between the two recipes, KCl+KOH etching has shown a higher etch rate (6~7 times) and is able to remove ~9 μm and ~36 μm-thick damage layer from the Si (0001) and the

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42

Philipsen, Harold, Sander Teck, Nils Mouwen, Wouter Monnens, and Quoc Toan Le. "Wet-Chemical Etching of Ruthenium in Acidic Ce⁴⁺ Solution." Solid State Phenomena 282 (August 2018): 284–87. http://dx.doi.org/10.4028/www.scientific.net/ssp.282.284.

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The wet-chemical etching of ruthenium in acidic solutions of cerium (IV) has been investigated using electrochemical methods. Etch rates were determined using Rutherford backscattering spectroscopy (RBS) and post-etching surface roughness was investigated using atomic force microscopy (AFM). Low-k material is compatible with the etchant, however, residues were formed.

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43

Liu, Dan, Guoliang Chen, Zhonghao Huang, et al. "P‐7.11: Effect of etching conditions, MoNb thickness on gate profile and CD Bias of ADS Pro TFT." SID Symposium Digest of Technical Papers 55, S1 (2024): 1083–86. http://dx.doi.org/10.1002/sdtp.17284.

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The etched MoNb/Cu stack film is widely used as gate electrodes for ADS Pro TFTs. The CD Bias and profile angle(PA) are two important performance parameters for wet etching. The product‐specific bottom MoNb thickness and the fluctuation of wet etching conditions(time, temperature, and Cu ion concentration) make it difficult to precisely control the etching quality, thus it is of great significance to identify the influence of the above two factors on CD Bias and PAs. In this paper, the wet etching time, temperature and Cu ion concentration are taken as independent variables, and 11 different e

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44

Lakrathok, Anantachai, Jakrapong Supadech, Chana Leepattarapongpan, et al. "Design of the comb-drive structure to reduce asymmetry lateral plasma etching on the cavity SOI substrate for MEMS fabrication." Journal of Physics: Conference Series 2934, no. 1 (2025): 012027. https://doi.org/10.1088/1742-6596/2934/1/012027.

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Abstract A conventional microelectromechanical system (MEMS) fabricated using deep-reactive ion etching (DRIE) on a silicon-on-insulator (SOI) wafer and wet etching with hydrofluoric acid (HF) encounters challenges related to isotropic etching, such as microstructure stiction, etched byproduct contamination, and over-etching of the side protective oxide layer. Even with the utilization of cavity SOI (C-SOI) wafers, certain movable structures can still experience damage due to asymmetry in lateral plasma etching caused by the uneven distribution of plasma ions and etchant radicals. This investi

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45

Kim, Jonghyeok, Byungjoo Kim, Jiyeon Choi, and Sanghoon Ahn. "The Effects of Etchant on via Hole Taper Angle and Selectivity in Selective Laser Etching." Micromachines 15, no. 3 (2024): 320. http://dx.doi.org/10.3390/mi15030320.

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This research focuses on the manufacturing of a glass interposer that has gone through glass via (TGV) connection holes. Glass has unique properties that make it suitable for 3D integrated circuit (IC) interposers, which include low permittivity, high transparency, and adjustable thermal expansion coefficient. To date, various studies have suggested numerous techniques to generate holes in glass. In this study, we adopt the selective laser etching (SLE) technique. SLE consists of two processes: local modification via an ultrashort pulsed laser and chemical etching. In our previous study, we fo

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46

Cansizoglu, Mehmet F., Mesut Yurukcu, and Tansel Karabacak. "Ripple Formation during Oblique Angle Etching." Coatings 9, no. 4 (2019): 272. http://dx.doi.org/10.3390/coatings9040272.

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Chemical removal of materials from the surface is a fundamental step in micro- and nano-fabrication processes. In conventional plasma etching, etchant molecules are non-directional and perform a uniform etching over the surface. However, using a highly directional obliquely incident beam of etching agent, it can be possible to engineer surfaces in the micro- or nano- scales. Surfaces can be patterned with periodic morphologies like ripples and mounds by controlling parameters including the incidence angle with the surface and sticking coefficient of etching particles. In this study, the dynami

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Shimozono, Naoki, Mikinori Nagano, Takaaki Tabata, and Kazuya Yamamura. "Study on In Situ Etching Rate Monitoring in Numerically Controlled Local Wet Etching." Key Engineering Materials 523-524 (November 2012): 34–39. http://dx.doi.org/10.4028/www.scientific.net/kem.523-524.34.

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Numerically controlled local wet etching (NC-LWE) is very promising technique for deterministic figuring of ultraprecision optical devices, such as aspherical lens, photo mask substrate and X-ray or neutron focusing mirror. NC-LWE technique is non-contact removal process using chemical reaction between etchant and surface of workpiece, so this technique enables us to figure the objective shape without introduction both substrate deformation and sub-surface damage. It is essential to measure temperature and concentration of the etchant to maintain the material removal rate constant over a proce

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Choi, Woong, Sanghyun Moon та Jihyun Kim. "Photo-Enhanced Inverse Metal-Assisted Chemical Etching of α-Ga₂O₃grown on Al₂O₃". ECS Meeting Abstracts MA2023-01, № 32 (2023): 1833. http://dx.doi.org/10.1149/ma2023-01321833mtgabs.

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Si-based semiconductor devices are not suitable for stable operations in the aerospace environments. Among the ultra-wide bandgap semiconductor materials, gallium oxide (Ga2O3) is attracting attention as the next-generation material for high-power semiconductor devices in extreme condition beyond Si, owing to its large band gap of 4.5-5.3 eV, high breakdown electric fields of 7-10 MV/cm, excellent chemical and thermal stability and radiation hardness. Alpha gallium oxide (α-Ga2O3) has the largest bandgap (4.8-5.3 eV) and the highest breakdown electric fields (~10 MV/cm) among the five Ga2O3 po

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49

Kayede, Emmanuel, Emre Akso, Brian Romanczyk, et al. "Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N." Crystals 14, no. 6 (2024): 485. http://dx.doi.org/10.3390/cryst14060485.

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A wet-etching technique based on a mixture of hydrochloric (HCl) and nitric (HNO3) acids is introduced, demonstrating exceptional 42:1 selectivity for etching N-polar GaN over Al0.24Ga0.76N. In the absence of an AlGaN etch stop layer, the etchant primarily targets N-polar unintentionally doped (UID) GaN, indicating its potential as a suitable replacement for selective dry etches in the fabrication of GaN high-electron-mobility transistors (HEMTs). The efficacy and selectivity of this etchant were confirmed through its application to a gate recess module of a deep-recess HEMT, where, despite a

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50

Deprédurand, Valérie, Tobias Bertram, Maxime Thévenin, Nathalie Valle, Jean-Nicolas Audinot, and Susanne Siebentritt. "Alternative Etching for Improved Cu-rich CuInSe2 Solar Cells." MRS Proceedings 1771 (2015): 163–68. http://dx.doi.org/10.1557/opl.2015.447.

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ABSTRACTTwo alternative chemical etchings (aqueous solution of bromine and bromine methanol solution) have been here tested to replace the KCN etching step in Cu-rich CuInSe2 based solar cells fabrication process. This new oxidative etch aims also at smoothing and thinning the as-grown films. This directly affects the interface between the absorber and the CdS buffer, interface which causes problems for Cu-rich solar cells. We present here the effect of these two alternative etchings on both the absorber surface and the solar cells parameters: whereas the bromine methanol etching destroys the

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