Дисертації з теми "Ferrite de Bismuth"
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Moniz, S. J. A. "Growth of bismuth oxide and bismuth ferrite thin films via CVD." Thesis, University College London (University of London), 2012. http://discovery.ucl.ac.uk/1370616/.
Повний текст джерелаHatling, Oddmund. "Multiferroic, Magnetoelectric Nanoparticles : Lanthanum-substituted Bismuth Ferrite." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for materialteknologi, 2011. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-16315.
Повний текст джерелаLiu, Yuhang. "First Principle Study of Multiferroic Bismuth Ferrite." Thesis, Uppsala universitet, Materialteori, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-364857.
Повний текст джерелаSkiadopoulou, Styliani. "Multiferroic behaviour of bismuth ferrite porous thin films." Master's thesis, Universidade de Aveiro, 2013. http://hdl.handle.net/10773/11829.
Повний текст джерелаAn enormous contribution in the scientific community of material engineering is being made by the exceptionally rapid evolution of the field of multifunctional materials. Multiferroics combine simultaneously at least two of the three ferroic properties: ferroelectricity, ferromagnetism and ferroelasticity. Magnetoelectric multiferroics’ ability of magnetic field manipulation via electric fields or vice versa can be extremely promising for information storage applications, leading to thinner, as well as flexible devices, with significantly high energetic efficiencies and elevated capacities. The aim of this work is the preparation and characterization of bismuth ferrite porous thin films, having as further objective to be able to serve as matrices for future functionalization. The strategy of this work consists of: a) dense film preparation with varying deposition velocities, b) porous film preparation with varying solution template quantities, inorganic precursor concentration and deposition velocities. Annealing temperature studies were also required, for the obtainment of the desired properties and control of microstructure. The methodologies for the film preparation in use were: a) sol-gel process, b) Evaporation Induced Self-Assembly (EISA), for the induction of porosity, and c) dip-coating technique. A series of dense films with varying deposition velocities were produced, serving as means of comparison for the porous thin films. Increasing the sol-gel deposition velocity led to increasing thickness. Piezoresponse Force Microscopy (PFM) characterization was conducted, revealing the expected ferroelectric domains. By the same technique, local piezoelectric hysteresis loops were obtained, showing increase of polarization saturation with increasing thickness. Lastly, magnetic moment measurements were carried out by the use of Superconducting Quantum Interference Device (SQUID), presenting decrease of remnant magnetization with increasing thickness. Varying template concentration was introduced in order to obtain a homogenous porous network. Homogeneity and lack of cracks in the films were successfully achieved, by decreasing solution template mass, for a given solution concentration. Thermal treatment studies revealed loss of porous network ordering at elevated annealing temperatures, required for the obtainment of crystallization and enhanced multiferroic properties. Local piezoelectric hysteresis loops showed increase of the effective piezoelectric coefficient with increasing thickness. SQUID characterization presented increasing remnant magnetization with increasing porosity. Lastly, increasing inorganic precursors concentration resulted in better control of porosity order and increase in the piezoelectric coefficient.
Uma enorme contribuição na comunidade científica da Engenharia de Materiais tem sido feita pela evolução excecionalmente rápida no âmbito dos materiais multifuncionais. Os multiferróicos combinam simultaneamente pelo menos duas das três propriedades ferróicas: ferroeletricidade, ferromagnetismo e ferroelasticidade. Os multiferróicos magnetoelétricos que permitem a manipulação do campo magnético através do campo elétrico e vice versa são extremamente promissores para aplicações de armazenamento de informação, levando a dispositivos mais finos e flexíveis com eficiência energética significativamente mais alta e elevadas capacidades. O objetivo deste trabalho é a preparação e caracterização de filmes porosos de ferrite de bismuto, com vista a serem capazes a uma futura funcionalização. A estratégia deste trabalho consiste: a) preparação de filme denso variando a velocidade de deposição, b) preparação de filme poroso variando o template da solução concentração do precursor inorgânico, e velocidades de deposição. Os estudos sobre temperatura de calcinação são também necessários, para a obtenção das propriedades requeridas e o controlo da microestrutura. As metodologias para a preparação dos filmes foram: a) sol-gel, b) Evaporation Induced Self-Assembly, para a indução da porosidade, e c) dip-coating. Foi preparada uma série de filmes densos variando a velocidade de deposição, servindo como meio de comparação para os filmes porosos. Aumento da velocidade de deposição resulta em aumento da espessura dos filmes. Foi utilizada a caracterização por piezoresponse force microscopy (PFM), revelando domínios ferroelétricos como esperado. Pela mesma técnica, foram obtidas curvas de histerese piezoelétricas locais mostrando o aumento da saturação da polarização com o aumento da espessura. Por fim, as medidas dos momentos magnéticos foram obtidos através do Superconducting Quantum Interference Device (SQUID), apresentando uma diminuição da magnetização remanescente com o aumento da espessura. A variação da concentração do template foi introduzida de modo a obter uma porosidade homogénea. A homogeneidade e ausência de fissuras nos filmes foi conseguida com sucesso pela diminuição da massa do template da solução, para uma determinada concentração da solução. Os estudos do tratamento térmico revelou a perda da porosidade ordenada para temperaturas mais elevadas, necessárias para a obtenção da cristalização e melhoria das propriedades multiferróicas. As curvas de histerese piezoelétrica local mostraram um aumento do coeficiente efetivo piezoelétrico com o aumento da espessura. A caracterização por SQUID apresentou um aumento da magnetização remanescente com o aumento da porosidade. Por fim, o aumento da concentração dos precursores inorgânicos resulta em um melhor controlo da ordem da porosidade e aumento do coeficiente piezoelétrico.
Palizdar, Meghdad. "Preparation and characterization of textured bismuth ferrite based ceramics." Thesis, University of Leeds, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.590464.
Повний текст джерелаTurner, Stuart Lee. "The structure of bismuth ferrite - lead titanate (BiFeO3 - PbTiO3)." Thesis, University of Leeds, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.507885.
Повний текст джерелаGupta, Rekha. "Magnetoelectric coupling in multiferroic bismuth ferrite based composite nanostructures." Thesis, IIT Delhi, 2017. http://localhost:8080/iit/handle/2074/7057.
Повний текст джерелаBurnett, Timothy Laurence. "Growth and charaterisation of bismuth ferrite lead titanate single crystals." Thesis, University of Leeds, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.487709.
Повний текст джерелаShenton, John Kane. "First-principles investigations of structure-function relationships in bismuth ferrite." Thesis, University College London (University of London), 2018. http://discovery.ucl.ac.uk/10057684/.
Повний текст джерелаStevenson, Timothy James. "Magnetic and electric properties of bismuth ferrite lead titanate ceramics." Thesis, University of Leeds, 2010. http://etheses.whiterose.ac.uk/1371/.
Повний текст джерелаCressoni, Chiara <1995>. "Modified nanostructured Bismuth Ferrite thin films for application in photoelectrocatalysis." Master's Degree Thesis, Università Ca' Foscari Venezia, 2019. http://hdl.handle.net/10579/16018.
Повний текст джерелаWang, Naigang. "Multiferroic Bismuth Ferrite-Lead Titanate and Iron-Gallium Crystalline Solutions: Structure-Property Investigations." Thesis, Virginia Tech, 2005. http://hdl.handle.net/10919/33854.
Повний текст джерелаManjunath, B. "Structural and magnetic properties of Bi and Fe sites co-substituted bismuth ferrite." Thesis(Ph.D.), CSIR - National Chemical Laboratory, Pune, 2018. http://dspace.ncl.res.in:8080/xmlui/handle/20.500.12252/4532.
Повний текст джерелаSena, Wellington Adriano Fernandes. "Propriedades estruturais e controle da estequiometria de filmes finos de BiFeO3 /." Ilha Solteira, 2019. http://hdl.handle.net/11449/190753.
Повний текст джерелаResumo: O objetivo do trabalho foi estudar as propriedades estruturais dos filmes finos de ferrita de bismuto (BFO) ao se adicionar excesso de nitrato de ferro ao invés de nitrato de bismuto conforme muitas referências na literatura vêm praticando com a intenção de obter um BFO puro. Filmes finos de BFO foram preparados sobre substratos Pt/TiO2/SiO2/Si(100) usando o método de Pechini pertencente a rota química sol-gel polimérica. Foram produzidos filmes de estequiometria nominal e de variação de 2, 4, 6, 8, 10 e 12 mol% de excesso de nitrato de Ferro. O processo de síntese dos filmes passou por quatro deposições, quatro pirólises a 300 ºC por 20 minutos e cristalização a 600 ºC por 40 minutos. As propriedades físicas dos filmes foram investigadas usando técnicas de MEV, DRX, Raman e EDS. Rietveld foi usado para calcular os parâmetros de rede e o modelo de Williamson-Hall foi usado para calcular o tamanho do cristalito e o microstrain. Resultados do DRX revelaram o aparecimento da fase secundária Bi2O3, ela aparece quando há o excesso de bismuto. Resultados do EDS confirmam o excesso de Bi. A técnica de EDS apontou uma maior At% do bismuto em relação ao ferro em todas as amostras, sendo que, a de 12 mol% foi a que apresentou características mais próxima de uma estequiometria desejável para a produção de um BFO puro.
Abstract: The objective of this work was to study the structural properties of bismuth ferrite (BFO) thin films by adding excess iron nitrate instead of bismuth nitrate as many references in the literature have been practicing with the intention of obtaining a pure BFO. BFO thin films were prepared on Pt / TiO2 / SiO2 / Si (100) substrates using the Pechini method belonging to the polymeric sol-gel chemical route. Films of nominal stoichiometry and variation of 2, 4, 6, 8, 10 and 12 mol% of iron nitrate excess were produced. The synthesis process of the films went through four depositions, four pyrolysis at 300 ºC for 20 minutes and crystallization at 600 ºC for 40 minutes. The physical properties of the films were investigated using SEM, XRD, Raman and EDS techniques. Rietveld was used to calculate lattice parameters and the Williamson-Hall model was used to calculate crystallite size and microstrain. XRD results revealed the appearance of the secondary phase Bi2O3, it appears when there is excess bismuth. EDS results confirm excess Bi. The EDS technique showed a higher At% of bismuth in relation to iron in all samples, and the 12 mol% was the one that presented characteristics closer to a desirable stoichiometry for the production of a pure BFO.
Mestre
Kavanagh, Christopher M. "Synthesis and structure-property relationships in rare earth doped bismuth ferrite." Thesis, University of St Andrews, 2013. http://hdl.handle.net/10023/3555.
Повний текст джерелаBennett, James Thomas. "Development of bismuth ferrite derived piezoelectric ceramics for high temperature applications." Thesis, University of Leeds, 2014. http://etheses.whiterose.ac.uk/7473/.
Повний текст джерелаSalih, Jalal Mohammed. "Quantitative atomic resolution characterisation of internal interfaces in doped bismuth ferrite." Thesis, University of Glasgow, 2016. http://theses.gla.ac.uk/8283/.
Повний текст джерелаRuette, Benjamin Thibault. "Induced Phase Transition in Magnetoelectric BiFeO3 Crystals, Thin-layers and Ceramics." Thesis, Virginia Tech, 2003. http://hdl.handle.net/10919/42638.
Повний текст джерелаMaster of Science
Oliveira, Felipe Fernandes de. "Deposição de filmes BiFeO3 via spray pirólise e caracterização microestrutural e de propriedades elétricas e ópticas." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2015. http://hdl.handle.net/10183/131385.
Повний текст джерелаThis research investigated the deposition of thin films of bismuth ferrite (BFO) on silicon substrate using the spray pyrolysis technique based on inorganic salts as precursors. For this purpose water, ethylene glycol and ethanol/butyl carbytol (1:1) were used as solvents to prepare the solution for spraying. The depositions were carried out with different substrate temperatures for each solvent used: 200, 250, 300 and 350ºC. The film deposition at low temperatures (200°C) promotes the formation of cracks due to the arrival of the liquid state from droplets sprayed by the atomizer. When using solvent ethanol/butyl carbytol (1:1) the formation of dense films was verified for the different depositions. The thermal gravimetric (TGA) and differential thermal analysis (DTA) were performed for the as-deposited films at 200°C with different solvents for the study of possible reactions of thermal decomposition. The BFO films were heated at 550°C for one hour aiming to the formation of the crystalline state BiFeO3 with rhombohedral structure. The films were analyzed by Xray diffraction (XRD) and scanning electron microscopy (SEM) before and after treatment. The XRD showed the crystalline state obtained after the heat treatment at 550°C/1h. It was observed the formation of non-stoichiometric composition on the film. The SEM images showed formation of films regardless of the solvent used for the temperature to 200°C. However, the increase temperature promotes the formation of particles on the substrate. Applying the ethylene glycol solvent the formation of porous films appeared, since for ethanol/butyl carbytol (1:1) was observed the formation of dense films with the presence of cracks. The electrical characterization of the films will be performed using impedance spectroscopy (IS) coupled to a furnace in order to vary the temperature of the measures. The film deposited with ethylene glycol presents a major electrical conductivity than films deposited using ethanol/butyl carbytol or water. This behavior can be associated with a non-stoichiometric composition of BFO. Moreover, the optical properties were obtained by diffuse reflectance spectroscopy. The films present a band gap between 2.23 and 2.26 eV, approximately.
Wang, LiQiu. "Quantitative three dimensional atomic resolution characterisation of non-stoichiometric nanostructures in doped bismuth ferrite." Thesis, University of Glasgow, 2013. http://theses.gla.ac.uk/4364/.
Повний текст джерелаQaisar, Sayyed Adam. "Fatigue and high temperature behaviour of the La-doped bismuth-ferrite lead-titanate system." Thesis, University of Leeds, 2013. http://etheses.whiterose.ac.uk/5556/.
Повний текст джерелаAbdul, Hadi Zeinab. "Terahertz emission spectroscopy of multiferroic bismuth ferrite : insights into ultrafast currents and phonon dynamics." Electronic Thesis or Diss., Le Mans, 2024. http://www.theses.fr/2024LEMA1030.
Повний текст джерелаTerahertz (THz) technologies have attracted significant interest in the scientific community due to their unique position in the electromagnetic spectrum, bridging the gap between the microwave and infrared regions. This radiation is non-ionizing and can penetrate various materials without causing damage, making it highly attractive for numerous potential applications. Recent advances in ultrafast laser technology have expanded the exploration of THz radiation into a wide range of exciting technologies. It’s now being used in fields like medicine for new imaging techniques, in spectroscopy for analyzing materials, in information and communication technology for faster data transfer, and even in security, agriculture, quality control and fundamental material science. Consequently, the development of efficient and tunable THz sources has become a major focus within the THz community to expand these applications further, motivating the exploration of new materials and emission mechanisms. In my PhD project, I have explored a promising new THz emitter: the well-known multiferroic material ‘Bismuth Ferrite’ (BiFeO3). This multiferroic material is particularly interesting due to its distinctive multiferroic properties. BiFeO3 exhibits both a large ferroelectric polarization and a antiferromagnetic order at room temperature offering a unique interplay of ferroelectric and magnetic orders and making this material a promising candidate for THz generation. Using a THz emission spectroscopy setup that I constructed, with its electro-optical sampling detection, I examine THz emission from three distinct BiFeO3 samples. First one with in-plane polarization, another with out-of-plane polarization, and a third presenting striped domains with two orientations of polarization. This technique allows for the direct observation and analysis of THz radiation emitted by these samples upon above gap laser excitation. The experimental investigation involves a detailed study of the THz transient signals emitted from the BiFeO3 samples under varying experimental conditions. By varying the pump wavelengths, sample orientations, directions of pump light polarization, and pump power levels, we can explore how these factors influence the THz emission. Following this, we extract the carrier dynamics (ultrafast current) and lattice vibrations (optical phonons) contributions to this THz transient. And finally, by analyzing their response to experimental parameters changes, we can have a deeper understanding of the physical mechanisms contributing to these ultrafast dynamics and THz emission in BiFeO3
Haneberg, Dag Håkon. "A Finite-Size Study on Samarium-Substituted Bismuth Ferrite : Multiferroic and Lead-Free Piezoelectric Materials." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for materialteknologi, 2011. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-16311.
Повний текст джерелаKhan, Mikael Ali. "Preparation and properties of bismuth ferrite-lead titanate thin films prepared by pulsed laser deposition." Thesis, University of Leeds, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.485633.
Повний текст джерелаYao, Situ. "Preparation and Magneto-optical Effect of Ferrite-based Composites and Thin Films." 京都大学 (Kyoto University), 2016. http://hdl.handle.net/2433/215554.
Повний текст джерелаNguyen, Lucie. "Approche du frittage et du co-frittage de matériaux céramiques et métalliques pour l'élaboration par le procédé d'impression jet d'encre de composants magnétiques." Limoges, 2013. http://www.theses.fr/2013LIMO4005.
Повний текст джерелаThis work deals with the study of the sintering of ceramic and metallic materials to allow their co-sintering for the development of a magnetic component shaped by ink-jet printing. The study and understanding of the sintering of the dielectric material (composed of silica) with or without additives such as TiO2, Bi2O3, ZnO relied on the in situ characterizations by ESEM and XRD of the phase transformations, the mechanisms of densification occurring during the heat treatment. It has been shown that these additives could act either as former or modifier of the vitreous silica network and lead to large variations in the crystallization température and densification. The densification kinetics and shrinkage amplitude of the dielectric, conductive and magnetic materials are very different, several improvement possibilities were advocated for their co-sintering: doping of the conductive material, calcination température of the magnetic material. . . . These solutions allowed the élaboration of bimaterial components shaped by ink-jet printing with designs close to the one of the final component
Lepoittevin, Christophe. "Nouvelles ferrites de strontium présentant des structures complexes : synthèse et caractérisation structurale." Caen, 2006. http://www.theses.fr/2006CAEN2063.
Повний текст джерелаSmith, Thomas. "Studies of p-type semiconductor photoelectrodes for tandem solar cells." Thesis, Loughborough University, 2014. https://dspace.lboro.ac.uk/2134/14522.
Повний текст джерелаKirsch, Andrea [Verfasser], Thorsten M. [Akademischer Betreuer] Gesing, Reinhard X. [Gutachter] Fischer, and Götz [Gutachter] Eckold. "Multiferroic bismuth ferrates : Synthesis, structure-property relationships and phase transformations / Andrea Kirsch ; Gutachter: Reinhard X. Fischer, Götz Eckold ; Betreuer: Thorsten M. Gesing." Bremen : Staats- und Universitätsbibliothek Bremen, 2018. http://d-nb.info/1170321089/34.
Повний текст джерелаVelez, Emersson Eduardo Espinosa. "Síntese e estudo das propriedades estruturais, morfológicas e elétricas do composto Bi25FeO39 e suas potenciais aplicações." reponame:Repositório Institucional da UFABC, 2016.
Знайти повний текст джерелаDissertação (mestrado) - Universidade Federal do ABC, Programa de Pós-Graduação em Física, 2016.
Neste trabalho, apresentamos novos resultados sobre segurança de protocolos de distribuição quântica de chave de duas vías (TWQKD por suas iniciáis em inglês) que utilizam estados não ortogonáis. Trabalhamos no cenário de protocolos para os quais o pós-processamento é feito com comunicação clássica de uma via e não há pre-processamento. O análise de segurança é implementado com tecnicas que permitem cubrir conjuntos de protocolos bastante amplos. Desse jeito, providenciamos uma nova prova de segurança para um protocolo TWQKD recentemente proposto [32] e pesquisamos a possibilidade de superar seu desempenho. Este protocolo é determinista, o que signica que o receptor pode decodicar os bits codicados com probabilidade igual a um. Mostramos que só há um protocolo TWQKD desse tipo (não reportado na literatura até onde sabemos) com o potencial de ter uma fração secreta maior e em consequência ser mais robusto ao ruído. Além disso, é argumentado que a fração secreta correspondente podería ser a mesma do protocolo "six-state" [9]. Por outro lado, analizamos o desempenho de protocolos TWQKD quando o ruído do canal de comunicação pode depender das polarizações especícas dos estados transmitidos. Encontramos que, para certas famílias de protocolos e uma quantidade de ruído dada, a informação potencialmente ltrada é limitada superiormente pela associada com um canal despolarizante. Adicionalmente, táis protocolos incluem opera ções de "pre-codicação" que poderíam contribuir a esta melhora no caso de ruído assimétrico. Denimos também um parâmetro para caracterizar a eciência de protocolos TWQKD, associado à fração de qubits que o receptor pode decodicar; em concordância, este parâmetro alcança o máximo valor para protocolos deterministas. Discute-se como uma alta eciência pode na prática melhorar fatores como a taxa de bits secretos e a qualidade da estimação do ruído.
We present new results concerning security of Two-Way Quantum Key Distribution (TWQKD) protocols that employ non orthogonal states (e.g. LM05 [22]). We work within the scenario where the classical post-processing is performed with one-way classical communication and there is no pre-processing. The security analysis is carried out with techniques that allow to cover quite broad sets of protocols. In this way, we give a new security proof for a recently proposed TWQKD protocol [32] and investigate the possibility of outperforming it. This protocol is deterministic, meaning that the receiver can decode the encoded bits with probability one. We show that there is only one TWQKD protocol of this kind (non reported in the literature as far as we know) with the potential to have a larger secret fraction and consequently be more robust against noise. Furthermore, it is argued that the corresponding secret fraction could be the same of the 6-State protocol [9]. On the other hand, we analyze the performance of TWQKD protocols when the noise of the communication channel may depend of the particular polarization states being transmitted. We find that, for certain families of protocols and a given amount of total noise, the potentially leaked information is upper bounded by the associated to a depolarizing channel. Moreover, such protocols include "pre-encoding" operations that could contribute to this enhancement in the asymmetric noise case. We also define a parameter to characterize the Efficiency of QKD protocols, referring to the fraction of qubits that the receiver is able to decode; accordingly, this parameter achieves the maximum value for deterministic protocols. It is discussed how a high efficiency can in practice improve factors like the secret key rate and the quality of the noise (or error) estimation.
Gonçalves, Lucas Fabrício. "Desenvolvimento de filmes finos multiferróicos de BiFeO3 modificadas com Ca com potencial aplicação em memórias de multiplos estados /." Guaratinguetá, 2018. http://hdl.handle.net/11449/157086.
Повний текст джерелаBanca: José Vitor Candido de Souza
Banca: Mauricio Antonio Algatti
Banca: Francisco Moura Filho
Banca: Filiberto González Garcia
Resumo: Os elementos de memórias de múltiplos estados nos quais a informação pode ser armazenada tanto nos estados de polarização quanto no estado de magnetização espontânea do elemento, podem ser obtidos, através da fabricação de filmes finos texturizados de BiFeO3 (BFO) dopados com Cálcio, sobre eletrodo de (Pt/TiO2/SiO2/Si), visando otimizar as propriedades ferroeletromagnêticas. O método Pechini ou percursores poliméricos, depositados por "Spin-Coating", é relativamente de fácil controle e baixo custo para a deposição de filmes finos texturizados. O cristal do BiFeO3 possui uma estrutura perovskita distorcida em um sistema romboédrica, mas em formato de filme fino encontramos uma fase pseudo tetragonal favorável as propriedades de memorias de múltiplos estados, como a diminuição da degradação, aumento da polarização espontânea e remanescente, diminuição na corrente de fuga, diminuição do tempo de resposta ao impulso, crescimento epitaxial, controle de vacâncias de oxigênio e diminuição de fases secundarias. Tudo isso é atingido, através de variações das resinas, controlando a volatização excessiva do Bismuto e de parâmetros no crescimento do filme, como, o tempo e temperatura de cristalização, da quantidade de dopante Ca, na variação de diferentes eletrodos óxidos de base para produção do filme fino. Apesar das excelentes propriedades dos filmes finos de BiFeO3 (BFO), dois sérios problemas são comumente encontrados para imediata aplicação deste material em memórias multiferróica... (Resumo completo, clicar acesso eletrônico abaixo)
Abstract: The multi-state memory elements in which the information can be stored in both the polarization states and the spontaneous magnetization state of the element can be obtained by the production of calcium-doped thin films of BiFeO3 (BFO) on electrode (Pt / TiO2 / SiO2 / Si), in order to optimize ferroelectromagnetic properties. The Pechini method or polymer precursors, deposited by Spin-Coating, is relatively easy to control and low cost for the deposition of textured thin films. The crystal of the BiFeO3 has a perovskite structure distorted in a rhombohedral system, but in thin film format we find a pseudo tetragonal phase favorable to the properties of memories of multiple states, such as the decrease of the degradation, increase of the spontaneous and remaining polarization, decrease in the current reduction of impulse response time, epitaxial growth, control of oxygen vacancies and decrease of secondary phases. All of this is achieved through variations of the resins, controlling the excessive volatilization of Bismuth and parameters in the growth of the film, such as the time and temperature of crystallization, the amount of dopant Ca, in the variation of different base oxides electrodes for production of the thin film. Despite the excellent properties of the BiFeO3 (BFO) thin films, two serious problems are commonly encountered for the immediate application of this material in multiferroic memories: high current density, resulting in Fe (Fe3 + to Fe2 +) valence fluctuatio... (Complete abstract click electronic access below)
Doutor
Valette, Pascale. "Dynamique de paroi de domaines magnetiques dans des grenats ferrimagnetiques." Paris 6, 1987. http://www.theses.fr/1987PA066654.
Повний текст джерелаPeixoto, Marina Manuela Vieira. "Preparação e caracterização de fibras e nanotubos de BiFeO3 e FeNbO4." Master's thesis, Universidade de Aveiro, 2015. http://hdl.handle.net/10773/15732.
Повний текст джерелаEsta dissertação teve como objetivo a produção e caracterização física de fibras e nanotubos de BiFeO3 e FeNbO4. Para o desenvolvimento destes materiais utilizou-se a técnica de fusão com laser (LFZ), o método sol-gel (Pechini) e o método de poros absorventes. As amostras obtidas foram sujeitas a uma caracterização estrutural por difração de raios-X e espetroscopia de Raman, morfológica por microscopia electrónica de varrimento e elétrica por medidas de constante dielétrica. Os resultados obtidos com a técnica de difração de raios-X mostraram que o gel com tratamento a 750 ºC é polifásico. Para conseguir produzir nanotubos escolheu-se o LaCoO3 como material alternativo. Usando a técnica de fusão de zona com laser (LFZ) obtiveram-se fibras de BiFeO3, FeNbO4 e compósitos de BiFeO3+FeNbO4. Com esta técnica foram crescidas fibras a várias velocidades (5, 10, 25, 50, 100 e 200 mm/h), tendo os resultados obtidos com a difração de raios-X evidenciado que todas as amostras obtidas são polifásicas, sendo a amostra de 10 mm/h para o BiFeO3 e a de 5 mm/h para o FeNbO4 as que apresentam melhores propriedades. As amostras de 5 mm/h de todos os compósitos são aquelas que possuem menor quantidade de segundas fases e portanto foram alvo de estudo mais aprofundado. A caracterização dielétrica permitiu verificar que todas as amostras apresentam fenómenos de relaxação dielétrica. Verifica-se também que para o BiFeO3 a constante dielétrica é superior na amostra crescida à velocidade de 10 mm/h, para o FeNbO4 é superior na amostra crescida a 5 mm/h e nos compósitos a amostra com 75% de BiFeO3 e 25% de FeNbO4 apresenta um comportamento diferente das restantes, eventualmente devido à sua microestrutura singular.
In this work, BiFeO3 and FeNbO4 fibers and nanotubes were prepared and characterized. The samples were obtained using three different preparation techniques: laser floating zone technique (LFZ), sol-gel method (Pechini) and the wetting pore method. Structural characterization of the samples was made using the X-ray diffraction (XRD) and Raman spectroscopy techniques, morphologic characterization by scanning electron microscopy (SEM) and electrical characterization by impedance spectroscopy. The XRD patterns showed that the BiFeO3 gel heat-treatment at 750 °C is polycrystalline. To produce nanotubes, by the wetting pore method, LaCoO3 was used as an alternative material. With the LFZ technique, BiFeO3 and FeNbO4 fibers and BiFeO3 + FeNbO4 composites were prepared. The fibers were grown at various pulling speeds (5, 10, 25, 50, 100 and 200 mm/h), and the XRD patterns demonstrated that all samples are polycrystalline. The BiFeO3 samples growth at 10 mm/h and the FeNbO4 samples growth at 5 mm/h were chosen to be analysed electrically. The composite samples growth at 5 mm/h are those having the least amount of secondary phases, and therefore were subjected to further studies. The dielectric characterization shown that all the samples have a dielectric relaxation phenomenon, thermally activated. It was also verifyed that for the BiFeO3 sample the dielectric constant is higher for the growth speed of 10 mm/h and for the FeNbO4 is higher for the grown speed of 5 mm/h. The composite sample 75% BiFeO3-25% FeNbO4 (% wt) behaves differently from the others, possibly due to its unique microstructure.
Kumari, Akanksha. "Synthesis of Bismuth Ferrite and La –doped Bismuth ferrite by auto combustion technique." Thesis, 2012. http://ethesis.nitrkl.ac.in/3764/1/akanksha_thesis.pdf.
Повний текст джерелаHsiu-JungYen and 顏秀容. "Effects of Cobalt Substitution on Bismuth Ferrite." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/30354049848539278314.
Повний текст джерела國立成功大學
材料科學及工程學系碩博士班
98
Cobalt doped bismuth ferrite were synthesized by both solid state reaction and RF magnetron sputtering. In the solid state sintering process, the formation of BiFeO3 phase was often accompanied by the appearance of some secondary phases like Bi2Fe4O9 and Bi25FeO40. To avoid the problem, various sintering conditions were tried in order to get the most pure phase possible and then, the remaining trace of any secondary phase was washed away using some acid solution. It was found that the relative amount of the secondary phase, Bi2Fe4O9, was reduced by the Co doping. Similar sintering process was used to make the Co doped BiFeO3 targets for the RF magnetron sputtering of thin film samples. Under the optimum growth parameters, the films of pure BiFeO3 phase could be grown on the Pt coated silicon and the conductive FTO glass substrates, without the presence of any secondary phase. The absorption spectra of Co-doped BiFeO3 films were measured by the UV-Vis spectrometry, from which the band gap was calculated to be 2.79 eV, almost exactly the same as the theoretical value for the un-doped pure BiFeO3. Photoluminescence spectra were also measured and a number of broad emission peaks were observed over the wavelength range 380-489 nm, among which the 450 nm emission came from the inter-band transition and the 469 nm emission was probably due to the transition from the Bi2+ defect level to the valence band. The origin of other emissions is not clear yet. In the electric conduction measurements, the resistivity of the BiFeO3 samples was found to decrease with the increasing temperature. The Arrhenius plots of conductivity vs. temperature showed that there existed at least two activation energies, arising from the defect or dopant energy levels inside the band gap. However, these two energy levels seemed not to be relevant to the unknown emissions observed in the photoemission spectra. In the magnetic measurements, the vibration sample magnetometry was employed to measure the M-H curves, which showed that both the saturation magnetization and the coercivity increased with the Co doping level. Thermal gravity analysis under applied magnetic field showed that the magnetization of the Co doped samples disappeared at 400 ?C, manifesting that it could not possibly come from the magnetic secondary phases such as CoFe2O4 (TC= 520 ?C), Fe3O4 (Tc= 585 ?C) and ?-Fe2O3 (Tc= 590 ?C). It was more likely that the Co doping somehow modified the spin arrangements in BiFeO3.
Chih-WeiLai and 賴至緯. "Formation mechanism and dielectric behaviorof bismuth ferrite." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/78933898113177666205.
Повний текст джерела國立成功大學
材料科學及工程學系碩博士班
98
BiFeO3 (BFO) is a potential material in the multiferroic materials. It exhibits ferroelectric ordering and antiferromagnetic ordering at room temperature. But there are many problems to overcome, such as second phase and large leakage current. In the previous study by other reseachers point out that the poor hysteresis loop is due to the large leakage current.In this study, we present a simple wet chemical route for obtaining single phase BiFeO3 powders.The influence on leakage current and ferrocelectric behavior by changing process parameter.Moreover ,we compare BFO by three different stoichiometric to discuss the formation mechenism of the second phase.We can see the different results by measuring P-E curve in different frequency and electric field.
Kisku, Momata. "Surfactant Assisted Autocombustion Synthesis Of Bismuth Ferrite." Thesis, 2009. http://ethesis.nitrkl.ac.in/354/1/final_project_report-Bishmuth_Ferrite_pdf.pdf.
Повний текст джерелаYing-HaoWang and 王盈皓. "The Effects of Nickel Substitution on Bismuth Ferrite." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/20251920478389202766.
Повний текст джерелаAsmita, Kumari. "Investigation of Multiferroic Properties of Scandium Substituted Bismuth Ferrite." Thesis, 2013. http://raiith.iith.ac.in/829/1/PH11M02.pdf.
Повний текст джерелаLu, Yi-Hsien, and 呂奕賢. "Nanoscale Characterization of Bismuth Ferrite Films by Scanning Probe Microscopy." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/00021545914933836056.
Повний текст джерела國立清華大學
材料科學工程學系
93
Bismuth ferrite (BiFeO3, BFO), a multiferroic material possessing both ferroelectric and several magnetic orders at room temperature, is studied by scanning probe microscopy (SPM) in this dissertation. Nanoscale ferroelectric properties including domain distribution, local hysteresis, and local poling are explored by piezoresponse force microscopy (PFM), one of the analyzing tools based on SPM. The magnetic response after an electrical poling is also studied by combining PFM and magnetic force microscopy (MFM), an analyzing tool to investigate nanoscale magnetic domains based on SPM. BFO thin films were produced by magnetron sputtering at 350 �aC. With Pt/Ti/SiO2/Si substrates, BFO films showed good ferroelectricity with obvious hysteresis behavior and piezoelectric coefficients as high as 50 pm/V. However, with LNO/Pt/Ti/SiO2/Si substrate, unstable piezoresponse signal was shown. Direct domain writing using PFM on BFO films was successfully executed over large regions and on single grains. Different voltages were pre-biased at certain areas to show different polarities. A large voltage pulse was also added on a single domain to show reversed polarization. However, the magnetic response after an electrical poling was not observed due to the interference of an electrostatic force.
Wang, Dan, and 王丹. "Doped Bismuth Ferrite-based Perovskite Type Cathode Materials for IT-SOFCs." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/35886765639739263603.
Повний текст джерела國立臺灣大學
材料科學與工程學研究所
104
The effects of nickel, cobalt and manganese doping in bismuth-based ferrite perovskite (Bi0.7Sr0.3FeO3-δ) used as cathode of solid oxide fuel cells have been investigated in this study. The cathode powders were synthesized by EDTA-citric acid method. The phase purity of synthesized perovskites were analyzed by X-ray Diffraction (XRD). The solubility limit of Ni was 3 at%, while Mn can substitute for Fe at least 50 at% in BSF. Electrical conductivity by 2-probe and 4-probe DC methods showed that the 50 mol% doping of Mn on B-site improved the electrical conductivity significantly. The oxygen nonstoichiometry was analyzed by X-ray photoelectron spectroscopy (XPS) and thermogravimetric analysis (TGA) to reveal the deficiency of oxygen and ionic conductivity in the ferrites. The ionic conductivity of BSF was 4.21 x10-3 S.cm-1 at 800 oC. Anode disk of 300 μm thick coated with thin layer (μm layer thickness) of electrolyte by spin-coating method. The polarization resistance and contact resistance of the half-cell with an 8YSZ-N flat layer and cathode sintered by different sintering temperatures were analyzed by electrochemical impedance spectra analysis (EIS). Finally, the optimal cathode (Bi0.7Sr0.3Fe0.5Mn0.5O 2.88-0.034+20 SDC) was assembled to a full cell and the maximum power output was 119 mW.cm-2 at 800 oC.
Fan, Cheng-Li, and 范振豊. "Electric property and Photovoltaic behavior of ferroelectric bismuth ferrite thin films." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/39208185784334191366.
Повний текст джерелаDas, Krishnendu. "Application Of Bismuth Titanate And Bismuth Ferrite Based Binary/Ternary Heterostructure Nanomaterials Towards Photocatalytic Degradation Of Agrochemical Contaminants." Thesis, 2022. http://ethesis.nitrkl.ac.in/10428/1/2022_PhD_KDas_516CY1016_Application.pdf.
Повний текст джерелаHsu, Jing-Chang, and 許晉章. "The Fabrication and Characteristics Investigation of Bismuth Ferrite Thin Film by Sputtering." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/t2s496.
Повний текст джерела國立臺灣大學
機械工程學研究所
107
In this thesis, we use radio frequency magnetron sputtering deposition technique to fabricate a multiferroic material, Bismuth ferrite(BFO), which possesses ferroelectric and anti-ferromagnetic property in the same time. We deposit BFO samples at the same temperature but anneal them at different temperature and in different atmosphere to find if there are some differences in crystal structure and electric properties. Then we choose the best of all to integrate with Barium titanate into a bilayer thin film. The combination of BTO and BFO is to learn the magneto-electric effect between ferroelectric and anti-ferromagnetic materials. In addition, we fabricate 5 different thickness ratio of the BTO/BFO bilayer to find out at which ratio will the best electric characteristic occur. According to results, the performance of Bismuth ferrite single layers is not good, the leakage current is about 10-1~10-2 ampere, the P-E loops look like a oval ball because of poor dielectric property, and worst of all, we cannot even measure the capacitance property. But everything changes in BTO/BFO bilayer structures due to the interlayer coupling effect. First, the leakage current plummets to 10-6~10-7 ampere. Second, the capacitance becomes measureable and the value is about 6x10-9 farad. Third, the maximum polarization is up to 4 μC/cm2. It’s a tremendous progress from BFO single layer to BTO/BFO bilayer. What disappoints us is that the magneto-electric measurements show that the applied magnetic field has no effect on our samples.
温國宏. "Films Thickness Dependence of Ferroelectric and Photovoltaic Properties of Calcium Doped Bismuth Ferrite." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/47260632657294266642.
Повний текст джерела國立新竹教育大學
應用科學系碩士班
103
In this experiment, the photovoltaic effect with different film thickness of 5% Ca doped BiFeO3 thin films were investigated. The probable physical mechanism were carried out many different measurements which may affect the efficiency of the photovoltaic effect. The specimen of BFO thin films and the electrode were all deposited on Si(100) by RF magnetron sputtering. First, we grew LaNiO3 on Si(100) at 450 . Second, The 5% Ca doped BiFeO3 films were deposited on LaNiO3. Third, we deposited Pt or AZO to do measurements, respectively. Film thickness was estimated by SEM and X-ray reflectivity. Film crystallinity was carried out by X-ray diffraction measurement. The morphology was measured by atomic force microscope and X-ray reflectivity. The hysteresis loop was performed by TF-2000 and the photovoltaic effect were measured by 405 nm laser. BFO was (100) highly preferred along Si (100) substrate from X-ray diffraction measurement. BFO film strain relax as film thickness increase, hence the diffraction peak position shift more close to the expected bulk value. The surface roughness, which was carried out by AFM and X-ray reflectivity has little increase as film thickness thicker. The hysteresis loop showed that the polarization slow down as the film thickness increased. The photovoltaic effect also slow down as the film thicker. The BFO built-in electric field affect the efficiency of photovoltaic effect. As the film thickness increased to 100 nm, the strain relax caused built-in electric field become weaker and the probability of electron and hole recombined increase due to distance between two electrode; therefore, the efficiency of photovoltaic hidden.
Wu, chun-hsien, and 吳俊賢. "Films Thickness Dependence of Ferroelectric and Photovoltaic Properties of Lanthanum Doped Bismuth Ferrite." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/18060275025942903027.
Повний текст джерела國立新竹教育大學
應用科學系碩士班
103
The photovoltaic effect was discussed under different thickness of Lanthanum doped BiFeO3 thin film. Thin film were deposited by RF-sputtering.First,LaNiO3 (LNO) was deposited on Si(100) substrate, then BiFeO3 was grown on LNO. The top electrode used aluminum doped zinc oxide (AZO). BFO thickness have 25, 50, 75, 100 and 150 nm, respectively, and the thickness was calibrated by X-ray reflectivity and field emission scanning electron microscopy. Surface roughness was carried out by atomic force microscopy. Lanthanum doped BFO have strain relaxation with film thickness increase which was observed from the peak position shift of theta-two theta scan of X-ray diffraction. As the film thickness increase, the dipole moment decrease and the built-in electric field decrease. The probability of electron-hole recombination become higher as the built-in electric field become smaller; therefore, the efficiency of photovoltaic effect become smaller. The polarization effect played an important role for efficiency of photovoltaic. As the film thickness increase, the resistance has a dramatic increase that dominate the efficiency of photovoltaic more than the polarization effect dominate. The efficiency of photovoltaic do not have straight correlation with film crystallinity, surface roughness, transmittance and leakage current by various measurements under different film thickness.
Peng, Yi Ting, and 彭憶婷. "The study of photovoltaic effect and electronic structure of Neodymium doped Bismuth ferrite." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/78718378629475265465.
Повний текст джерела國立清華大學
材料科學工程學系
104
The BiFeO3 (BFO) materials have received intensive interests in the photovoltaic effect due to the high Curie temperature and the smaller direct band gap than other ferroelectric oxide ceramics. The group of Prof. Tu Chi-Shun has shown the enhanced photovoltaic effect 56 times higher in neodymium doped BFO. Using first-principles calculations, we offered physical insights into the origins of the enhanced photovoltaic effect. The doping effect of Nd in reducing the movable charge density due to oxygen vacancies in BiFeO3 was confirmed by shifting down of Fermi level of electronic structure, resulting in more electrons or holes accumulated on the two sides of p-n junction to enhance Voc and Jsc for increasing photovoltaic effect. The Rietveld analysis showed the concentration Nd around 1.24%. Besides,the scanning transmission electron microscopy image simulation analysis of BFONd and first-principles calculations of total free energy suggested that the Nd atom replaced the Bi atom on the A site of perovskite ABO3.The electronic structure showed that the calculated direct band gaps are respectively about 2.257 and 2.227 eV for BFO and BFONd. We considered that the oxygen vacancy due to the fabrication at high temperature around 870℃, forming the sub-bandgap defect states which lowered the photovoltaic effect. The doped Nd caused the sub-bandgap defect states shifted closer to conduction band easier to overcome the trap states by thermal perturbation, and reduced the movable charge density by shifting down of Fermi level to enhance photovoltaic power conversions. In addition, the optical calculations showed that the absorption coefficient of BFONd was higher than BFO to enhance the photocurrent density, which was proportional to absorption coefficient based on Glass Law. In the quantitative analysis,we can estimated the ratio of Jsc of BFONd and BFO at the laser intensity above 800W/m2 with wavelength 405nm, which was around 30 times higher from the Voc and band gap values for same thickness of BFO and BFONd samples.
Je-WeiLin and 林哲緯. "The crystalline and spin structure of doped Bismuth Ferrite --- Bulk, nanoparticle and film." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/36079884489810435055.
Повний текст джерела國立成功大學
物理學系碩博士班
100
In the dissertation, we investigate the mutiferroic bismuth ferrites Bi1−xDyxFeO3 in various forms, including bulk, nanoparticle, and thin film in order to understand the general relation between crystal structure and spin structure. In particular, the crystalline and spin structures are studied with X-ray powder diffraction (XRD), magnetization, scanning electron microscope (SEM) images, electron spin resonance (ESR), and neutron powder diffraction (NPD). The crystal structure for the bulk samples of bismuth ferrites Bi1−xDyxFeO3 with x = 0 ~ 0.05 are indexed based on the rhombohedral space group R3c in the XRD patterns. With x = 0.30 and 0.40, the structure further transforms to the orthorhombic group Pbnm. Weak magnetism of Bi1−xDyxFeO3 is studied via the electron spin resonance (ESR) of X-band (9.53 GHz) at various temperatures. The g-factor of pure BiFeO3 is 2.0, which originates from its cycloidal spin structure; while for the doped Bi1−xDyxFeO3 samples with x 〉 0.10, ESR spectra reveal a second phase with a different g-factor around 1, which is attributed to the homogeneous magnetized phase of Bi1−xDyxFeO3. Temperature dependent of ESR and neutron data further suggest a spin-reorientation at 140 and 200 K. For nanoparticles of Bi1−xDyxFeO3, it is evidential that Dy-doping can lead to suppression of grain size, and the diameter of particle d plays an important role in nanoparticles. The linearity between magnetization and 1/d indicates that the magnetic anisotropy constant Keff does not violate the magnetic anisotropy model. The data shows a great increase of magnetization M without following the linearity in M vs. 1/d at x = 0.4. There exists a critical size dc correlated with magnetic anisotropy constant and exchange constant. When dc is smaller than the cycloid spin wavelength (62 nm), the exchange constant in nanoparticle is enhanced. The ESR spectra of nanoparticles are observed and the resonance field (or g-factors) is different from that of bulk samples. In the ESR spectra of BiFeO3 thin film, there are six sharp lines observed for different resonance field (Hr). These lines are assigned to the five in-plane spin wave (SW) resonances, because the values of Hr have a linear relation with the square of spin wave index n. However, the in-plane mode of n = 5 only appears at 110 K. An unknown mode appears at temperatures of 110 K and 170 K which may be related to the spin reorientation temperatures of Fe3+ magnetic moment.
Tien-YaoChiang and 蔣天堯. "Dielectric Behavior,Leakage Current and Hystereses of Polarization and Magnetization of Bismuth Ferrite/ Barium Ferrite Composite Prepared by a Novel Process." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/64033413911504354024.
Повний текст джерелаAllen, Marc Alexander. "Theoretical determination of electric field-magnetic field phase diagrams of the multiferroic bismuth ferrite." Thesis, 2014. http://hdl.handle.net/1828/5628.
Повний текст джерелаGraduate
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