Готові списки джерел за темами / Film structurel

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Добірка наукової літератури з теми "Film structurel"

Автор: Grafiati
Опубліковано: 10 травня 2025

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Статті в журналах з теми "Film structurel"

1

Lussac, Olivier. "Les recherches érotiques du cinéma structurel et la réduction radicale de Fluxus." Figures de l'Art. Revue d'études esthétiques 4, no. 1 (1999): 593–604. http://dx.doi.org/10.3406/fdart.1999.1225.

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Анотація:
Au cours des années soixante, deux tendances du cinéma érotique se développaient. Chacun utilisait le corps comme matériau. D’un côté, le corps était représentation et figuration expressive, de l’autre, il était fragmentation et dématérialisation de l’objet de l’art. En effet, la première tendance était issue des champs minimaliste et «underground ». La seconde était essentiellement destructrice et provenait de Fluxus et de sa tendance au Concept Art. Finalement, si le film expérimental dans son ensemble faisait appel à une avidité sémantique, le film structurel développait davantage la construction «interne », tandis que Fluxus détruisait au contraire le processus filmique.
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2

Saouter, Catherine. "Le téléroman, art de nouveaux conteurs: formes et influences de récit téléromanesque." Recherche 33, no. 2 (April 12, 2005): 259–76. http://dx.doi.org/10.7202/056693ar.

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Анотація:
Le téléroman, qui prolonge la longue et fructueuse carrière du feuilleton dans la presse et à la radio, est la forme de fiction la plus largement consommée, loin devant le film et le roman. Du point de vue structurel autant que thématique, le téléroman est en voie de devenir un véritable paradigme qui déborde des stricts cadres télévisuels jusque dans d'autres modes d'expression: cinéma, littérature, bande dessinée. Quelques éléments de démonstration basés principalement sur le téléroman Les Filles de Caleb sont apportés.
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3

Singh, Satya Pal, Archana Kumari Singh, and Aman Alexander. "SYNTHESIS OF Mg-DOPED n(ZnO) THIN FILMS USING SOL-GEL 6 DIP-COATING METHOD AND CHARACTERIZATION OF ITS STRUCTURAL AND OPTICAL PROPERTIES." Journal of Advanced Scientific Research 13, no. 04 (April 30, 2022): 69–75. http://dx.doi.org/10.55218/jasr.202213412.

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Анотація:
Mg-doped ZnO alloy thin films having hexagonal Wurtzite structures were prepared using the Sol-Gel method. The doping results into, increased surface roughness and reduced grain size. Photonic applications are made easier by altering the optical bandgap of ZnO nano-structured thin films doped with various components. Mg metal atom doped ZnO films are an excellent example for study. In this work, the thin film of Mg-doped ZnO is formed on glass substrate via dip coating method with varied concentration of dopant. Dip-coating method is one of the cheapest methods. SEM, Raman spectroscopy and UV-vis spectroscopy are used to characterize the thin films. The spectroscopic analysis revealed a more uniformed crystalline nano-structured surface with fewer structural deffects. As the Mg atom concentration is increased, the results show a linear increment in the band gap of Mg-doped ZnO thin film in comparsion to the pure ZnO nanostructured thin film, as well as there occurs an improvement in crystalline character. The reduction in intensity of visible radiation (enhancement in radiation in UV region) with increase in Mg concentration indicates for a decrease in intrinsic defects. The changing trends in optical and structural parameters as with increased Mg content reveal a nonlinear and non-monotonic relations. The work provides insights to analyse the dependence of optical bandgap on crystal structure and defects.
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4

Sim, Sang Gyo. "A Study on the imaginative structure and meaning of the Jeongdongjin Independent Film Festival." Liberal Arts Innovation Center 13 (November 30, 2023): 169–94. http://dx.doi.org/10.54698/kl.2023.13.169.

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Анотація:
This paper examined the imaginative structure of films screened at the 25th Jeongdongjin Independent Film Festival in 2023. A total of 22 films were screened at this fi lm festival, including 19 short fi lms, 1 feature fi lm, and 1 film festival support film. Among these works, seven works whose imaginative structure was easy to identify and whose narrative structure was clear were examined. Just as there is an explanation that the human unconscious is structured by language or libido that created the works submitted to this year's Jeongdongjin Independent Film Festival. The typical imaginative structures that appeared commonly at this film festival. Structures were paradox and human insight. The roots was love for humanity and family. It seems necessary to characterize fi lm festivals with specific themes. It may be necessary to plan with specialized themes such as family or the sea. Operating a children's film class program can also be considered, and it is also worth considering adding a program in the nature of a silver class.
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5

Hamada, Seiti, Takafumi Horiike, Tomohiro Uno, Masato Ishikawa, Hideaki Machida, Yoshio Ohshita, and Atsushi Ogura. "Evaluation of GexSbyTez Film Grown by Chemical Vapor Deposition." Materials Science Forum 725 (July 2012): 289–92. http://dx.doi.org/10.4028/www.scientific.net/msf.725.289.

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Анотація:
This paper describes structure evaluation of GexSbyTez (GST) film fabricated by chemical vapor deposition (CVD). We successfully established composition controlled GST CVD with smooth surface by applying appropriate deposition conditions. By increasing Ge flow rate or reducing substrate temperature, the average grain size was reduced and the film flatness was improved. As the results, we succeeded to obtain the extremely smooth surface, and also to fill a finite hole with conformal film deposition. All GexSbyTez films showed FCC or amorphous crystalline structures, both are utilized in the proposed phase change random access memory (PRAM), in spite of the wide range of composition control. We believe these CVD-GST films are useful for PRAM applications.
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6

WUTTIG, M., and B. FELDMANN. "ULTRATHIN METAL FILMS BY DESIGN: EXPLOITING THE CLOSE CORRELATION BETWEEN STRUCTURE AND MAGNETISM." Surface Review and Letters 03, no. 03 (June 1996): 1473–86. http://dx.doi.org/10.1142/s0218625x96002485.

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Анотація:
To design ultrathin metal films with desired properties, it is necessary to understand the close correlation between film structure and film properties. In this paper several examples of the relationship between the magnetism and the structure of thin metallic films are presented. It is demonstrated that for iron films on Cu(100) and Cu 3 Au (100) and for MnCu surface alloys, unusual film structures are often accompanied by unusual magnetic properties. While two fcc phases, which differ in their crystallographic and magnetic states, have been stabilized on Cu(100) depending upon film thickness, no fcc modification is observed on Cu 3 Au (100). This can be understood qualitatively if the different contributions to the total energy of the film are considered. For the weak magnets Mn and Fe studied here, this points towards a pronounced contribution of the surface to stabilizing unusual magnetic phases. This is demonstrated even quantitatively for the Cu (100) c(2×2) Mn phase, where an unusual surface-layer corrugation is accompanied by a large magnetic moment. An improved understanding of the energies that govern the correlation between structural and magnetic properties should widen the opportunities for designing ultrathin films with desired magnetic characteristics.
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7

Kveglis, L. I., A. V. Kuzovnikov, and I. V. Timofeev. "The Self-Organisation of Tetrahedrally Close-Packed Structures in Magnetic Nanocrystalline Tb-Fe and Co-Pd Films." Solid State Phenomena 115 (August 2006): 267–74. http://dx.doi.org/10.4028/www.scientific.net/ssp.115.267.

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Анотація:
The self-organization of an atomic structure in Tb30Fe70 and Co50Pd50 films possessing of high values of the perpendicular magnetic anisotropy (PMA) constant (K⊥ ~ 106 erg/cm3) is investigated by transmission electron microscopy. The crystallization of the films is realized in an explosive way with formation of different dissipative structures from the initial nanocrystalline state. In present work the structural model of a thin film in mezzo-scale and the correlation of a structure with magnetic properties are discussed.
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8

Huang, Jie, Xuan Pei, and Feng Ji. "Fabrication and Characterization of Ga and N Co-Doped SnO2 Films by MOCVD." Advanced Materials Research 538-541 (June 2012): 37–43. http://dx.doi.org/10.4028/www.scientific.net/amr.538-541.37.

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Анотація:
The gallium and nitrogen co-doped tin oxide (SnO2 :Ga-N) films have been prepared on α-Al2O3 (0001) substrates at 500°C by metalorganic chemical vapor deposition (MOCVD) method. The relative amount of Ga (Ga/(Ga+Sn) atomic ratio) was 8%. The flow rate of gaseous NH3 injected into the reactor chamber varied from 25sccm to 55sccm. According to the XRD patterns, the film grown at the flow rate of 25sccm has the best crystalline structure. Subsequently, a series of co-doped SnO2 films with the Ga concentration varying from 1% to 12% and the flux of 25sccm for NH3 were fabricated. Post-deposition annealing of the films was carried out at different temperatures for 2 h in nitrogen atmosphere. The structural, electrical and optical transmittance properties of the films have been investigated. For the as-deposited films, except that the film with 12% Ga doping has the amorphous structure, other films have the rutile structures of pure SnO2 with a strong (2 0 0) preferred orientation. After annealing, the structures of all films have changed obviously. Especially, the 12% Ga doping film has the polycrystalline structure also with the (200) preferred orientation. The average transmittances for all the films in the visible range were over 85%. The values of the band gaps varied from 3.3eV to 3.5eV for the as-deposited films and 3.7-3.9eV for the annealed ones. The electrical properties of the as-deposited films varied with the Ga content and were being discussed in detail.
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9

KAVAK, H., N. H. ERDOGAN, K. KARA, H. YANIS, Z. BAZ, and R. ESEN. "CHARACTERIZATION OF n AND p TYPE ZNO THIN FILMS DEPOSITED BY CATHODIC PULSED FILTERED VACUUM ARC SYSTEM." International Journal of Modern Physics B 23, no. 06n07 (March 20, 2009): 1719–24. http://dx.doi.org/10.1142/s0217979209061524.

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Анотація:
The transparent, conductive n and p -type semiconducting ZnO thin films were prepared by pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. The structural, optical and electrical properties of n and p -type ZnO thin films are investigated after annealing at 450°C. 197 nm thick n -type ZnO thin film was deposited with oxygen pressure of 8.5 × 10-4 Torr . XRD pattern of annealed ZnO thin film exhibits hexagonal structure with (100), (101) and (110) orientations. The crystallite size of semiconductor ZnO thin film is 18 nm, interplanar distance 0.16 nm and lattice constant c is 0.52 nm for (110) orientation. The optical transmittance spectra of n and p -type ZnO films are over 90% in the visible wavelength region with optical energy gap 3.3 eV. p -type ZnO thin films are produced by oxidation of PFCVAD deposited zinc nitride. Zinc nitride is deposited with nitrogen pressure of 8.6 × 10-4 Torr and the thickness of this film is 179 nm. The oxidation of zinc nitride thin films at 450°C results in hexagonal structures p -type ZnO thin films. XRD pattern of this film has the same (100), (101) and (110) orientations with the same crystalline structures as the directly deposited ZnO thin film. Hall measurements indicated that ZnO films were p -type and the highest carrier concentration of 1.08 × 1018 cm -3 and mobility of 93.53 cm2/Vs were obtained.
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10

Avramenko, K. A., Nina N. Roshchina, G. P. Olkhovik, Petro S. Smertenko, and Lyudmyla V. Zavyalova. "Structural and Electro-Physical Properties of ZnO Films, Obtained by a MOCVD Method on Glass and Silicon Substrates." Solid State Phenomena 230 (June 2015): 205–10. http://dx.doi.org/10.4028/www.scientific.net/ssp.230.205.

Повний текст джерела
Анотація:
This paper reports on the ZnO film structures obtained by MOCVD method from acetylacetonate of zinc and diethyldithiocarbamate of zinc on silicon substrates at 280-320 оС substrate. The structural, emitting and transport properties of the ZnO films were examined by X-ray diffraction, Scanning electronic microscopy, Photoluminescent microscopy and Current-Voltage methods. The electrical transport mechanisms were analyzed on the base of differential and injection approaches. The ZnO/Si structure with ZnO film obtained was found to be appropriate for use in electronic devices due to their structural and electrical properties.
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Більше джерел

Дисертації з теми "Film structurel"

1

Boutet, de Monvel Violaine. "Du feedback vidéo à l'IA générative : sur la récursivité dans les arts et médias." Electronic Thesis or Diss., Paris 3, 2025. http://www.theses.fr/2025PA030009.

Повний текст джерела
Анотація:
Cette thèse érige, sous le prisme du feedback, un pont entre l’art vidéo pionnier des années 1960 à 1980 et les pratiques en lien avec l’IA générative, que les avancées phénoménales de l’apprentissage profond ont précipitées depuis le milieu des années 2010. La rétroaction renvoie en cybernétique à l’autorégulation par la boucle de systèmes naturels et technologiques. Appliqué à des dispositifs analogiques, numériques ou hybrides en circuit fermé, ce processus automatisé qualifie aussi les effets contingents qui en résultent à l'écran. La première partie revient sur l’influence colossale que la théorie de l’information et la notion de bruit ont exercé sur la genèse du genre vidéo depuis l’avènement du médium, en 1965. Elle se concentre sur le paradigme narcissique (Rosalind Krauss, 1976) qui en a renseigné les canons jusqu’à la fin des années 1970, en analysant la place centrale occupée par la perception humaine et son extension prothétique télévisuelle. La seconde partie s’attache à l’exploration concurrente de ladite vision des machines, en dialogue avec les outils (Steina et Woody Vasulka, 1976). À partir du retournement technocratique de l’esthétique alors inhérent au traitement d’images en temps réel, une transition est opérée de la synthèse audiovisuelle à ses pendants cinématiques, puis artificiels. La troisième partie se penche sur la création en prise avec des modèles d’IA générative développés depuis l’introduction des GANs, en 2014. Interrogeant la redistribution de l’agentivité en réseau, elle considère ultimement la généalogie récursive des arts et médias, ainsi que les conditions d’une culture algorithmique sensible entre signal et données
This thesis raises, through the prism of feedback, a bridge between pioneer video art from the 1960s to the 1980s and the practices associated with generative AI, which the phenomenal advances in deep learning have precipitated since the mid-2010s. Retroaction in cybernetics refers to the self-regulation by the loop of natural and technological systems. Applied to closed-circuit analog, digital or hybrid setups, this automated process also qualifies the contingent effects that result from it on screen. The first section looks back at the colossal influence that information theory and the notion of noise have had on the genesis of the video genre since the advent of the medium, in 1965. It revolves around the narcissistic paradigm (Rosalind Krauss, 1976) that essentialized its canons until the late 1970s, by analyzing the central place occupied by human perception and its televisual prosthetic extension. The second section focuses on the concurrent exploration of so-called machine vision, in dialogue with the tools (Steina and Woody Vasulka, 1976). Building upon the technocratic reversal of aesthetics then inherent to real-time image processing, a transition is made from audiovisual synthesis to its cinematic, and artificial counterparts. The third section contemplates creation with generative AI models developed since the introduction of GANs, in 2014. Questioning the redistribution of agency in networks, it ultimately considers the recursive genealogy of the arts and media, as well as the conditions for a sensitive algorithmic culture between signal and data
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2

Garg, Akhilesh. "Organic Self-Assembled Films for Nonlinear Optics: Film Structure, Composition and Kinetics of Film Formation." Diss., Virginia Tech, 2008. http://hdl.handle.net/10919/28872.

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Анотація:
Organic materials exhibiting second-order non-linear optical (NLO) properties are a key to the development of advanced electro-optic (EO) modulators used in fiber-optic communications system. This work addresses the fabrication and characterization of organic materials with NLO properties using a self-assembly approach by alternately dipping a charged substrate into positively and negatively charged polymers to build up layer-by-layer (LbL) films. The effect of solution pH on the formation of LbL films fabricated using the polycation poly(allylamine hydrochloride) (PAH) and the polyanion poly{1-[p-(3–-carboxy-4–-hydroxyphenylazo)benzenesulfonamido]-1,2-ethandiyl} (PCBS) was studied using a quartz crystal microbalance with dissipation (QCM-D) monitoring, ellipsometry, absorbance, and second harmonic generation (SHG) measurements. PCBS has an azo-benzene chromophore side group that, when sufficiently oriented, results in measurable SHG. Films of PAH/PCBS fabricated at neutral pH where both PAH and PCBS are highly charged led to thin bilayers, ~1 nm, with a 1:1 molar ratio of PCBS:PAH. This molar ratio was found to be important for long-range polar ordering of PCBS in these films. Increasing the rate of convection was found to reduce the time required for complete adsorption of the polyion. This can have a significant impact on fabrication of films with high bilayer numbers. A variation of the above technique, which involves adsorbing one of the constituents electrostatically and another covalently, was studied using PAH and a reactive dye, Procion Brown (PB), which has a significantly higher hyperpolarizability than PCBS. It was found that a high pH, ~10.5, was important for achieving covalent attachment of the PB to the underlying PAH films. This resulted in much higher SHG intensities compared to when PB was deposited pH at 8.5-9.5 where the attachment of PB was due to a combination of electrostatic and covalent interactions. QCM-D results for PAH/PB films revealed the presence of a high percentage of unreacted amine groups in the underlying PAH film. A rate constant value for PB attachment step to the underlying PAH was also calculated. To enhance the SHG intensity of these films, silver nanoprisms were synthesized and deposited onto films using physisorption. An enhancement in the SHG intensity was observed for both PAH/PCBS and PAH/PB films.
Ph. D.
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3

Schiefer, Stefan. "Crystal structure of fiber structured pentacene thin films." Diss., lmu, 2007. http://nbn-resolving.de/urn:nbn:de:bvb:19-75797.

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4

Hatton, Hilary J. "Magnetic and structural studies of nanoscale multilayer and granular alloy systems of Ag and FeCo." Thesis, University of Sheffield, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.286916.

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5

Lee, Jae-kyun. "Structure-property correlation of polyimide thin films and line structures /." Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

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6

Parihar, U., N. Padha, J. R. Ray, M. S. Desai, C. J. Panchal, P. K. Mehta, Ірина Володимирівна Чешко, et al. "Effect of Film Thickness and Annealing on the Structural and Optical Properties of CuInAlSe2 Thin Films." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35321.

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Анотація:
CuIn1 – xAlxSe2 (CIAS) thin films were grown using flash evaporation method by varying the film thickness from 500 nm to 700 nm. Prepared CIAS thin films were annealed at 573 K for one hour in vacuum. The influence of film’s thickness and the annealing temperature were characterized by the X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive analysis of X-ray (EDAX), Optical transmission measurements, and Hall Effect measurement. As the film thickness increases the crystallinity improves and due to that the optical absorption also improves. The further improvement for different thicknesses of CIAS thin films were observed by annealing. The thicker (700 nm) and annealed CIAS thin film shows the crystallite size of 24.3 nm, energy band gap of 1.19 eV, and resistivity of about 9  102 Ω cm. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35321
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7

Morris, Anthony Kevin. "It's all a plot : an examination of the usefulness of the popularly accepted structural paradigm in the practice of writing of a feature film script." Thesis, Queensland University of Technology, 2008. https://eprints.qut.edu.au/16632/1/Anthony_Morris_Thesis.pdf.

Повний текст джерела
Анотація:
This study took the widely-accepted, ‘industry standard’ Structural Paradigm of feature film plotting, and ‘road tested’ it, assessing its value as a tool in the process of actually writing a feature film script. The methodology employed was to write a feature film script (titled THE ARM THAT DOES THE HARM) and look to apply the Paradigm to the writing process. Journals recording the process were kept and peer assessment undertaken. The data from these sources was then analysed and conclusions drawn. The reason for and value of this study are that, while this Paradigm is widely espoused by screenwriting gurus, taught as part of film courses and applied as a tool of script assessment and review, there is very little documented evidence of its actual value to the practice of writing a script. My findings revealed that, though a useful reference point throughout, the Paradigm is most valuable during the early stages of story structuring and again, most particularly, when editing later drafts. An important outcome of this study was that it identified the Paradigm as a valuable tool, not a rule that must be adhered to, a series of points a narrative must be seen to ‘hit’ in order for it to be considered to have been told correctly. Further, this study demonstrated in practice how this tool can be applied. This study suggests that trying to force an evolving story into the confines of the Paradigm can inhibit the story from developing ‘organically’ from its characters. Rather, the Paradigm should be applied as a tool for helping shape stories that first and foremost should be character-driven.
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8

Morris, Anthony Kevin. "It's all a plot : an examination of the usefulness of the popularly accepted structural paradigm in the practice of writing of a feature film script." Queensland University of Technology, 2008. http://eprints.qut.edu.au/16632/.

Повний текст джерела
Анотація:
This study took the widely-accepted, ‘industry standard’ Structural Paradigm of feature film plotting, and ‘road tested’ it, assessing its value as a tool in the process of actually writing a feature film script. The methodology employed was to write a feature film script (titled THE ARM THAT DOES THE HARM) and look to apply the Paradigm to the writing process. Journals recording the process were kept and peer assessment undertaken. The data from these sources was then analysed and conclusions drawn. The reason for and value of this study are that, while this Paradigm is widely espoused by screenwriting gurus, taught as part of film courses and applied as a tool of script assessment and review, there is very little documented evidence of its actual value to the practice of writing a script. My findings revealed that, though a useful reference point throughout, the Paradigm is most valuable during the early stages of story structuring and again, most particularly, when editing later drafts. An important outcome of this study was that it identified the Paradigm as a valuable tool, not a rule that must be adhered to, a series of points a narrative must be seen to ‘hit’ in order for it to be considered to have been told correctly. Further, this study demonstrated in practice how this tool can be applied. This study suggests that trying to force an evolving story into the confines of the Paradigm can inhibit the story from developing ‘organically’ from its characters. Rather, the Paradigm should be applied as a tool for helping shape stories that first and foremost should be character-driven.
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9

Reddy, K. Siva Sankara. "Electrical Properties Of Diamond Like Carbon Films In Metal-Carbon-Silicon (MCS) Structure." Thesis, Indian Institute of Science, 1994. https://etd.iisc.ac.in/handle/2005/192.

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Анотація:
Amorphous carbon film with Diamond like properties is the subject of intense interest in the past one and half decade. The unusual properties of these diamond like carbon films arise from the preponderance of SP3 tetrahedral bonding of carbon in the film. Depending on the processing technique and the processing conditions used, the structure of the films can range from amorphous carbon to large grain polycrystalline diamond. These deposited amorphous carbon films, which are smooth, may find their use in optoelectronics, in dielectric films and in microelectronics. These films are found to be chemically inhomogeneous(containing SP3 hybridized carbon in a matrix of SP2 hybridized non-graphitic carbon). There is a possibility of using these films as substrates in microelectronics, provided the deposited films are structurally smooth, are chemically homogeneous and are dopable with both types of impurities. A host of other advantages of using diamond like carbon as a substrate material in microelectronics made it a topic of interest to many investigators. This prompted the author to take up investigations on diamond like carbon films from the point of examining the electrical properties of these films and on the possibility of conceiving devices based on these films. This investigation dealt with, sputter deposition of diamond like carbon films and their electrical characteristics in MCS device structures. In this, emphasis is given to the importance of processing parameters involved and the effect of each parameter on the electrical and structural properties of the film. Various substrate treatments were done prior to sputtering and found that the DLC nature of the film exists in all the films but differ from one another in electrical resistivity, in nucleation density and in their adherence to the substrate. Films deposited on substrates treated with low vapour pressure oil resulted in compressive strain in the film and lead to very poor adhesion. The nucleation density increased when the substrates are pretreated with ultrasonic agitation in hard SiC grit. The substrate temperature had a direct impact on the resistivity of the film: resistivity decreases with increase in substrate temperature. The constituents of the plasma modified the structural properties of the film, e.g. the Hydrogen content in the plasma has resulted in increasing the SP3 hybridization content of the film, by acting as SP2- SP2 network terminator. Ultra violet light focused onto the substrate, in general, enhanced the deposition rate. Inclusion of Nitrogen in the plasma substantially increased the conductivity of the material and this is used in doping of the DLC film. The carbon films deposited on silicon are used for electrical characterisation. Deposition of metal electrode on the carbon film lead to the basic (MCS) device structure. The I vs.V characteristics of the MCS structure resemble those of junction diodes. From the I vs.V characteristics at different temperatures, it has been found that the reverse current goes through a maximum, drops back to certain level and once again increases with gradual increase in temperature. This behaviour of the structure with A1 as well as Ag as top electrode materials is explained by the heterojunction formed at the C-pSi interface. The initial increase in the reverse current is dominated by the drift of minority carriers across the depletion width at the reverse biased junction. With increase in temperature, the depletion width reduces to a minimum above a certain temperature, where the diffusion of carriers controls the current across the device. From the constructed energy-band diagram of heterojunction, it is shown that the change in the transport phenomena from drift of minority carriers to diffusion of majority carriers at the junction, introduces a barrier at the critical temperature; This is responsible for the drop in current at the critical temperature. This explains the anomaly of drop in reverse current with increase in temperature. The C vs. v characteristics showed a bell shaped behaviour indicating the presence of two junctions connected back to back. This confirms the type of contact formed at the metal-carbon interface and the type of conductivity of the film, concluding that A1 makes a Schottky contact where as Ag makes an ohmic contact and the deposited film behaves like n-type material. The C vs. V behaviour with temperature is explained by the two types of contacts in the case of Al-GpSi, i.e. Schottky contact at Al-C; and heterojunction at C-pSi interface. These C vs. V and I vs.V changes with temperature are in tune with each other and the model proposed takes care of all the characteristics observed. In case of Ag-GpSi, C vs. V with temperature shows junction like behaviour at elevated temperatures and are explained by the presence of the interface at C-pSi. It has been observed that in some of the carbon films, when an electric field of the order of l06 V/cm is applied, the reflectance of the Aluminium metal dot is increased by 5 times, coupled with a 50 to 100 times increase in the associated capacitance of the MCS structure. The increase in reflectance is explained by considering the film to be inhomogeneous with a matrix of varying dielectric constants (SP3 hybridized carbon in a medium of SP2 bonded carbon). The transformed film, is homogeneous and enhances the reflectance of the Aluminium dot. This is termed as "homogeneity induced smoothness." The transformation of inhomogeneous material to homogeneous material is further confirmed by the Raman spectroscopy, in which the broad peak is converted to a sharp peak changing the FWHM from 93 cm-1 to 4 cm-1 ; denoting the structural order in the film. To the best of our knowledge, this is the first investigation reporting the crystalline nature of the DLC, with structural order and the corresponding FWHM of the Raman peak as low as 4 cm-1. The preparational conditions of the film to get this transformation and the influence of various process parameters are examined. Devices based on Metal-Carbon-Oxide- Silicon (MCOS) structure are realized by thermally grown oxide/sputter deposited oxide on silicon, prior to carbon deposition. These structures showed voltage controlled negative resistance(VCNR) characteristics. The applied voltage and its distribution across the reverse biased junction and across the oxide gives rise to a negative resistance region. With the number of V vs. I characteristics measured, it is observed that the negative resistance region also shifts. This is attributed to the trapped charges in the carbon changing the distribution of applied voltage. This is explained by modifying the energy-band diagram. A concept of the accumalated charges at the oxide barrier filling up the higher energy states in the carbon and silicon, to become hot carriers is used. As long a. more voltage is dropped across the oxide, these hot carriers can surmount the barrier at the reverse biased junction. The flow of these carriers is cut off when the additional voltage is dropped across the reverse biased junction leading to a drop in the current. A further increase in the applied voltage nominally increases the current due to increase in the leakage current. A new hybrid (electrical/optical) read only memory (ROM) element is conceived and the way in which the information can be written and read is discussed. A two terminal negative resistance device using MCOS structure is fabricated and tested for its VCNR property. An analog memory device is proposed using the MCOS structure as gate in an FET. The work reported in this thesis has been divided into nine chapters. The introductory remarks on the importance of the area of research and about the work reported in this thesis are given in chapter one. Chapter two deals with some of the basic concepts related to understand the reported work. In chapter three the research work done by other investigators covering different aspects of this work is reported and some of their investigations are reviewed. Chapter four dealt with the various preparative techniques to deposit films, their structural characterisation, and the experimental work carried out to electrically characterize these films. Chapter five presents the I vs.V & C vs. V analysis and a model to qualitatively explain them. In chapter six field induced transformation phenomena of some of these films and its impact on the reflectance of the metal dot is dealt. Chapter seven consists of the MCOS device structure, its I vs.V characteristics and a model to explain the behaviour. Chapter eight presents the application part of same of the phenomena observed in conceiving a new hybrid ROM element and a two terminal negative resistance device. The concluding ninth chapter itemizes the important results of the work and suggestions to carry forward this work which can open up new vistas in the diamond like carbon film based technology and its applications in microelectronics.
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Reddy, K. Siva Sankara. "Electrical Properties Of Diamond Like Carbon Films In Metal-Carbon-Silicon (MCS) Structure." Thesis, Indian Institute of Science, 1994. http://hdl.handle.net/2005/192.

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Amorphous carbon film with Diamond like properties is the subject of intense interest in the past one and half decade. The unusual properties of these diamond like carbon films arise from the preponderance of SP3 tetrahedral bonding of carbon in the film. Depending on the processing technique and the processing conditions used, the structure of the films can range from amorphous carbon to large grain polycrystalline diamond. These deposited amorphous carbon films, which are smooth, may find their use in optoelectronics, in dielectric films and in microelectronics. These films are found to be chemically inhomogeneous(containing SP3 hybridized carbon in a matrix of SP2 hybridized non-graphitic carbon). There is a possibility of using these films as substrates in microelectronics, provided the deposited films are structurally smooth, are chemically homogeneous and are dopable with both types of impurities. A host of other advantages of using diamond like carbon as a substrate material in microelectronics made it a topic of interest to many investigators. This prompted the author to take up investigations on diamond like carbon films from the point of examining the electrical properties of these films and on the possibility of conceiving devices based on these films. This investigation dealt with, sputter deposition of diamond like carbon films and their electrical characteristics in MCS device structures. In this, emphasis is given to the importance of processing parameters involved and the effect of each parameter on the electrical and structural properties of the film. Various substrate treatments were done prior to sputtering and found that the DLC nature of the film exists in all the films but differ from one another in electrical resistivity, in nucleation density and in their adherence to the substrate. Films deposited on substrates treated with low vapour pressure oil resulted in compressive strain in the film and lead to very poor adhesion. The nucleation density increased when the substrates are pretreated with ultrasonic agitation in hard SiC grit. The substrate temperature had a direct impact on the resistivity of the film: resistivity decreases with increase in substrate temperature. The constituents of the plasma modified the structural properties of the film, e.g. the Hydrogen content in the plasma has resulted in increasing the SP3 hybridization content of the film, by acting as SP2- SP2 network terminator. Ultra violet light focused onto the substrate, in general, enhanced the deposition rate. Inclusion of Nitrogen in the plasma substantially increased the conductivity of the material and this is used in doping of the DLC film. The carbon films deposited on silicon are used for electrical characterisation. Deposition of metal electrode on the carbon film lead to the basic (MCS) device structure. The I vs.V characteristics of the MCS structure resemble those of junction diodes. From the I vs.V characteristics at different temperatures, it has been found that the reverse current goes through a maximum, drops back to certain level and once again increases with gradual increase in temperature. This behaviour of the structure with A1 as well as Ag as top electrode materials is explained by the heterojunction formed at the C-pSi interface. The initial increase in the reverse current is dominated by the drift of minority carriers across the depletion width at the reverse biased junction. With increase in temperature, the depletion width reduces to a minimum above a certain temperature, where the diffusion of carriers controls the current across the device. From the constructed energy-band diagram of heterojunction, it is shown that the change in the transport phenomena from drift of minority carriers to diffusion of majority carriers at the junction, introduces a barrier at the critical temperature; This is responsible for the drop in current at the critical temperature. This explains the anomaly of drop in reverse current with increase in temperature. The C vs. v characteristics showed a bell shaped behaviour indicating the presence of two junctions connected back to back. This confirms the type of contact formed at the metal-carbon interface and the type of conductivity of the film, concluding that A1 makes a Schottky contact where as Ag makes an ohmic contact and the deposited film behaves like n-type material. The C vs. V behaviour with temperature is explained by the two types of contacts in the case of Al-GpSi, i.e. Schottky contact at Al-C; and heterojunction at C-pSi interface. These C vs. V and I vs.V changes with temperature are in tune with each other and the model proposed takes care of all the characteristics observed. In case of Ag-GpSi, C vs. V with temperature shows junction like behaviour at elevated temperatures and are explained by the presence of the interface at C-pSi. It has been observed that in some of the carbon films, when an electric field of the order of l06 V/cm is applied, the reflectance of the Aluminium metal dot is increased by 5 times, coupled with a 50 to 100 times increase in the associated capacitance of the MCS structure. The increase in reflectance is explained by considering the film to be inhomogeneous with a matrix of varying dielectric constants (SP3 hybridized carbon in a medium of SP2 bonded carbon). The transformed film, is homogeneous and enhances the reflectance of the Aluminium dot. This is termed as "homogeneity induced smoothness." The transformation of inhomogeneous material to homogeneous material is further confirmed by the Raman spectroscopy, in which the broad peak is converted to a sharp peak changing the FWHM from 93 cm-1 to 4 cm-1 ; denoting the structural order in the film. To the best of our knowledge, this is the first investigation reporting the crystalline nature of the DLC, with structural order and the corresponding FWHM of the Raman peak as low as 4 cm-1. The preparational conditions of the film to get this transformation and the influence of various process parameters are examined. Devices based on Metal-Carbon-Oxide- Silicon (MCOS) structure are realized by thermally grown oxide/sputter deposited oxide on silicon, prior to carbon deposition. These structures showed voltage controlled negative resistance(VCNR) characteristics. The applied voltage and its distribution across the reverse biased junction and across the oxide gives rise to a negative resistance region. With the number of V vs. I characteristics measured, it is observed that the negative resistance region also shifts. This is attributed to the trapped charges in the carbon changing the distribution of applied voltage. This is explained by modifying the energy-band diagram. A concept of the accumalated charges at the oxide barrier filling up the higher energy states in the carbon and silicon, to become hot carriers is used. As long a. more voltage is dropped across the oxide, these hot carriers can surmount the barrier at the reverse biased junction. The flow of these carriers is cut off when the additional voltage is dropped across the reverse biased junction leading to a drop in the current. A further increase in the applied voltage nominally increases the current due to increase in the leakage current. A new hybrid (electrical/optical) read only memory (ROM) element is conceived and the way in which the information can be written and read is discussed. A two terminal negative resistance device using MCOS structure is fabricated and tested for its VCNR property. An analog memory device is proposed using the MCOS structure as gate in an FET. The work reported in this thesis has been divided into nine chapters. The introductory remarks on the importance of the area of research and about the work reported in this thesis are given in chapter one. Chapter two deals with some of the basic concepts related to understand the reported work. In chapter three the research work done by other investigators covering different aspects of this work is reported and some of their investigations are reviewed. Chapter four dealt with the various preparative techniques to deposit films, their structural characterisation, and the experimental work carried out to electrically characterize these films. Chapter five presents the I vs.V & C vs. V analysis and a model to qualitatively explain them. In chapter six field induced transformation phenomena of some of these films and its impact on the reflectance of the metal dot is dealt. Chapter seven consists of the MCOS device structure, its I vs.V characteristics and a model to explain the behaviour. Chapter eight presents the application part of same of the phenomena observed in conceiving a new hybrid ROM element and a two terminal negative resistance device. The concluding ninth chapter itemizes the important results of the work and suggestions to carry forward this work which can open up new vistas in the diamond like carbon film based technology and its applications in microelectronics.
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Книги з теми "Film structurel"

1

McGarvey, Niall Sean. The impact of quality assurance on structural analysis within aircraft structure. [s.l: The Author], 1996.

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2

Bill, Zoellick, ed. File structures. 2nd ed. Reading, Mass: Addison-Wesley, 1992.

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3

Tamīmī, Nabīlah Yūsuf. Aspects of tear film structure. Cardiff: The University of Wales, 1995., 1995.

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4

Babu Krishna Moorthy, Suresh, ed. Thin Film Structures in Energy Applications. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-14774-1.

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5

Venugopal, K. R. File structures using C++. New Delhi: Tata McGraw-Hill Pub. Co., 2009.

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6

G, Petersen Charles, ed. File structures with Ada. Redwood City, Calif: Benjamin/Cummings, 1989.

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7

E, Miller Nancy. File structures using Pascal. Menlo Park, Calif: Benjamin/Cummings Pub. Co., 1987.

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8

Cunningham, Margaret. File structure and design. Bromley: Chartwell-Bratt, 1985.

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9

Studio Stefania Miscetti (Rome, Italy) and Labics (Firm), eds. Labics: Structures. Rome]: Nero, 2015.

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10

FILM-PAK, '87 (1st 1987 Atlanta Ga ). Proceedings of Film-Pak '87: First International Conference on Advanced Films, Foils, and Multilayer Structure. Whippany, N.J. (5th Sharon Dr., Whippany 07981): Ryder Associates, 1987.

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Частини книг з теми "Film structurel"

1

Braginski, A. I. "Thin Film Structures." In The New Superconducting Electronics, 89–122. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1918-4_4.

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2

Mills, P. J. "Film formation." In Structure and Properties of Oriented Polymers, 423–46. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5844-2_9.

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3

Royce, Tony. "File Organisation." In Structured COBOL, 57–58. London: Macmillan Education UK, 1992. http://dx.doi.org/10.1007/978-1-349-12240-0_45.

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4

Varlamov, A. G., Yu M. Grigoriev, and V. A. Koudriashov. "CVD-Film Ceramic Materials Structure Analysis." In Composite Structures, 781–85. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3662-4_57.

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5

Filipenko, Olga. "MVL FIlm Finance LLC." In Introduction to Structured Finance, 335–38. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2015. http://dx.doi.org/10.1002/9781119197249.app6.

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6

Kolker, Robert P., and Marsha Gordon. "Formal Structures." In Film, Form, and Culture, 31–55. 5th ed. New York: Routledge, 2024. http://dx.doi.org/10.4324/9781003398875-3.

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7

Royce, Tony. "Sequential File Update." In Structured COBOL, 155. London: Macmillan Education UK, 1992. http://dx.doi.org/10.1007/978-1-349-12240-0_84.

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8

Sinha, Sanjib. "File Structure." In Beginning Laravel, 15–20. Berkeley, CA: Apress, 2016. http://dx.doi.org/10.1007/978-1-4842-2538-7_3.

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9

bin Uzayr, Sufyan. "File Structure." In Mastering Django, 51–70. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003310495-3.

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10

Ishihara, Ryoichi. "Poly-Si TFT Structures." In Thin Film Transistors, 670–700. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_15.

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Тези доповідей конференцій з теми "Film structurel"

1

Incorvia, Michael John. "Spectroscopy of the Metal/Inhibitor Interface." In CORROSION 1989, 1–63. NACE International, 1989. https://doi.org/10.5006/c1989-89454.

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Abstract The structural aspects of various inhibitor films determined through infrared, Raman, and X-ray photoelectron spectroscopic techniques will be reviewed. The spacial structure of the metal/inhibitor interface is an important component of the corrosion inhibitor mechanism influencing the metal/inhibitor bond, the two-and three-dimensional character of the film, and the interfacial reactions.
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2

JAYATILAKA,, GEHAN, WILLIAM NTSOANE, MOHAMMAD MOEIN MOHAMMADI, and MEHRAN TEHRANI. "CORRELATING STRUCTURE TO DAMPING AND STIFFNESS IN GRAPHENE OXIDE FILMS." In Proceedings for the American Society for Composites-Thirty Seventh Technical Conference. Destech Publications, Inc., 2022. http://dx.doi.org/10.12783/asc37/36445.

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Graphene oxide (GO) films have a great potential for aerospace, electronics, and renewable energy applications due to their low cost and unique properties. For structural applications, they can achieve an exceptional combination of damping and stiffness. This study investigates the effect of packing density, reduction, and water removal on stiffness and damping of graphene oxide films. GO sheets dispersed in water are passed through a filter and deposited on a removable substrate. Through variations of the film fabrication process, films of both GO and reduced GO (rGO) are produced with varying levels of packing. Heat treatment is also used to remove the water in half of the films. The degree of packing is assessed through film density calculations. Microscopy as well as Raman and X-ray spectroscopy are used to measure the degree of packing while Dynamic Mechanical Analysis (DMA) is used to quantity mechanical damping and storage modulus of specimens in tension. Correlating mechanical properties to structure of films revealed new understanding of damping and stress transfer mechanisms in these materials. Optimal structures resulted in superior combinations of stiffness (18 GPa) and damping (0.14), potentially paving the way for using GO based films in advanced structural applications.
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3

Ghaedi, Sirous, and Arun Misra. "On control of thin cylindrical shells using piezoelectric film actuators." In 36th Structures, Structural Dynamics and Materials Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 1995. http://dx.doi.org/10.2514/6.1995-1104.

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4

Khatami, S. M. Navid, D. Nadun Kuruppumullage, and Olusegun J. Ilegbusi. "Characterization of Metal Oxide Sensor Thin Films Deposited by Spray Pyrolysis." In ASME 2013 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/imece2013-65136.

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Chemical Spray Pyrolysis (CSP) of ZnO and SnO2 is of interest for gas sensor applications. The structural properties of the deposited film can be strongly influenced by deposition conditions. In this work, two solutions consisting of Tin Chloride and Zinc Chloride was sprayed on a heated substrate, where temperature was varied from 400° C to 450° C for ZnO, and from 350° C to 500° C for SnO2. X-ray diffraction and scanning electron microscopy, indicating a non-homogenous-structured film formed at low temperature for both oxides. At 450° C, a porous structure is observed for SnO2. This structure becomes homogenous at higher temperature. It was also found that at temperatures lower than 450° C, substrate temperature has significant impact on the composition of the synthesized films.
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5

Minesugi, Kenji, Junjiro Onoda, Hiroshi Ohkubo, and Yoji Hanawa. "Experimental study on damping capability of thin film with viscous lamina." In 37th Structure, Structural Dynamics and Materials Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 1996. http://dx.doi.org/10.2514/6.1996-1434.

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6

Loos, Alfred, John MacRae, David Hood, David Kranbuehl, and H. Dexter. "Resin film infusion (RFI) process simulation of complex shaped composite structures." In 37th Structure, Structural Dynamics and Materials Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 1996. http://dx.doi.org/10.2514/6.1996-1533.

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7

KARDOMATEAS, G. "Large deformation effects in the postbuckling behavior of compositeswith thin film delaminations." In 29th Structures, Structural Dynamics and Materials Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 1988. http://dx.doi.org/10.2514/6.1988-2260.

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8

COLLINS, S., C. PADILLA, R. NOTESTINE, A. VON FLOTOW, E. SCHMITZ, and M. RAMEY. "Design, manufacture, and application to space robotics of distributed piezoelectric film sensors." In 31st Structures, Structural Dynamics and Materials Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 1990. http://dx.doi.org/10.2514/6.1990-949.

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9

STRGANAC, THOMAS, ALAN LETTON, and ALLAN FARROW. "PHYSICAL CHARACTERIZATION OF THIN-FILM POLYMERS EXPOSED TO THE LOW EARTH ORBIT ENVIRONMENT." In 34th Structures, Structural Dynamics and Materials Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 1993. http://dx.doi.org/10.2514/6.1993-1577.

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10

PAYNE, DEBBIE, BRUCE BISKUP, ALAN LETTON, and THOMAS STRGANAC. "ON NONLINEAR VISCOELASTIC ANALYSIS OF THIN FILM MATERIALS USING A DYNAMIC MECHANICAL APPROACH." In 34th Structures, Structural Dynamics and Materials Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 1993. http://dx.doi.org/10.2514/6.1993-1578.

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Звіти організацій з теми "Film structurel"

1

Gutierrez, Carlos J. Structural and Magnetic Characterization of Fe(x)Co(1-x) Alloy Film Structures. Fort Belvoir, VA: Defense Technical Information Center, September 1994. http://dx.doi.org/10.21236/ada299911.

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2

Rujiravanit, Ratana. Preparation and characterization of hydrogel from chitin derivative and silk fibroin. Thailand Research Fund, 2003. https://doi.org/10.58837/chula.res.2003.80.

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Natural polymer blend films composed of chitosan and silk fibroin were prepared by solution casting technique with various ratios of chitosan to silk fibroin, using glutaraldehyde as crosslinking agent. The effects of the ratio of chitosan to silk fibroin and crosslinking agent on mechanical properties, swelling behavior and drug releasing property of the blend films were studied. For the swelling behavior, the blend films exhibited a dramatic change in the degree of swelling when immersed in acidic solutions. The blend film with 80% chitosan content had the maximum degree of swelling. It appeared that crosslinking occurred in the blend films helped the films retain their three dimensional structure. In addition, FTIR spectra of the films showed evidence of hydrogen bonding interaction between chitosan and silk fibroin. Drug release characteristics of the blend films with various blend compositions were investigated using theophylline, diclofenac sodium, amoxicillin trihydrate and salicylic acid as model drugs. It was found that the blend film with 80% chitosan content showed the maximum amount of drug release at pH 2.0 for all types of drugs. The maximum amount of salicylic acid, theophylline, diclogenac sodium and amoxicillin release from blend films with 80% chitosan content at pH 2.0 were 92.7%, 81.1%, 76.6%, and 37.2%, respectively. Drug release properties of the films with various blend compositions were also investigated using a modified Franz Diffusion cell and pig skin was used as material representing human skin.
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3

Agudelo Urrego, Luz María, Chatuphat Savigamin, Devansh Gandhi, Ghadir Haikal, and Antonio Bobet. Assessment of Pipe Fill Heights. Purdue University Press, 2023. http://dx.doi.org/10.5703/1288284317612.

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The design of buried pipes, in terms of the allowable minimum and maximum cover heights, requires the use of both geotechnical and structural design procedures. The geotechnical procedure focuses on estimating the load on the pipe and the compressibility of the foundation soil. The focus of the structural design is choosing the correct cross-section details of the pipe under consideration. The uncertainties of the input parameters and installation procedures are significant. Because of that, the Load Resistance Factor Design (LRFD) method is considered to be suitable for the design of buried pipes. Furthermore, the interaction between the pipe structure and surrounding soil is better captured by implementing soil-structure interaction in a finite element numerical solution technique. The minimum cover height is highly dependent on the anticipated traffic load, whereas the maximum cover height is controlled by the section properties of the pipe and the installation type. The project focuses on the determination of the maximum cover heights for lock-seam CSP, HDPE, PVC, polypropylene, spiral bound steel, aluminum alloy, steel pipe lock seam and riveted, steel pipe and aluminum arch lock seam and riveted, non-reinforced concrete, ribbed and smooth wall polyethylene, smooth wall PVC, vitrified clay, structural plate steel or aluminum alloy pipe, and structural plate pipe arch steel, or aluminum alloy pipes. The calculations are done with the software CANDE, a 2D plane strain FEM code that is well-accepted for designing and analyzing buried pipes, that employs the LRFD method. Plane strain and beam elements are used for the soil and pipe, respectively, while interface elements are placed at the contact between the pipe and the surrounding soil. The Duncan-Selig model is employed for the soil, while the pipe is assumed to be elastic. Results of the numerical simulations for the maximum fill for each type and size of pipe are included in the form of tables and figures.
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4

Lad, Robert J. Structural, electronic and chemical properties of metal/oxide and oxide/oxide interfaces and thin film structures. Office of Scientific and Technical Information (OSTI), December 1999. http://dx.doi.org/10.2172/758832.

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5

Smith, Kevin E. Electronic Structure in Thin Film Organic Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, June 2009. http://dx.doi.org/10.21236/ada510593.

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6

Madey, T. E. Structure and reactivity of model thin film catalysts. Office of Scientific and Technical Information (OSTI), August 1989. http://dx.doi.org/10.2172/7168433.

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Norton, David P. Low Dimensional K(Nb, Ta)O3 Thin Film Structures. Fort Belvoir, VA: Defense Technical Information Center, March 2005. http://dx.doi.org/10.21236/ada431683.

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Kim, T.-W. Structure and Electrocatalysis of Sputtered RuPt Thin-film Electrodes. Office of Scientific and Technical Information (OSTI), February 2005. http://dx.doi.org/10.2172/839765.

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Goldner, R. B. Attaining a solar energy economy with active thin film structures. Office of Scientific and Technical Information (OSTI), October 1995. http://dx.doi.org/10.2172/132828.

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Li, D., and S. D. Bader. Magnetic quantum well states in ultrathin film and wedge structures. Office of Scientific and Technical Information (OSTI), April 1996. http://dx.doi.org/10.2172/226044.

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