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Добірка наукової літератури з теми "Ge-2H"

Автор: Grafiati

Опубліковано: 29 березня 2025

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Статті в журналах з теми "Ge-2H"

1

Hayes, Julie E., Margaret Pallotta, Ute Baumann, Bettina Berger, Peter Langridge, and Tim Sutton. "Germanium as a tool to dissect boron toxicity effects in barley and wheat." Functional Plant Biology 40, no. 6 (2013): 618. http://dx.doi.org/10.1071/fp12329.

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Tolerance to boron (B) toxicity in barley (Hordeum vulgare L.) is partially attributable to HvNIP2;1, an aquaporin with permeability to B, as well as to silicon, arsenic and germanium (Ge). In this study, we mapped leaf symptoms of Ge toxicity in a doubled-haploid barley population (Clipper × Sahara 3771). Two quantitative trait loci (QTL) associated with Ge toxicity symptoms were identified, located on Chromosomes 6H and 2H. These QTL co-located with two of four B toxicity tolerance loci previously mapped in the same population. The B toxicity tolerance gene underlying the 6H locus encodes Hv

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2

HWANG, J. K., J. H. HAMILTON, and A. V. RAMAYYA. "N = 50 SHELL GAP EVOLUTION AND PARTICLE–HOLE EXCITATIONS IN 82Ge, 84Se AND 86Kr." International Journal of Modern Physics E 21, no. 03 (2012): 1250020. http://dx.doi.org/10.1142/s0218301312500206.

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The two excited 0+ states of the neutron-rich nuclei 82 Ge , 84 Se and 86 Kr are explained as 2-particle 2-hole (2p–2h) excited states associated with two different open-shells of Z = 28–50 and 28–40. Also, a configuration of 1p–1h 7+ state is assigned to the 3689 keV state in 82 Ge . These 1p–1h and 2p–2h excitation energies support the decreasing of the N = 50 shell gap when Z changes from 40 to 32. A N = 50 shell gap of 3.67 MeV for 78 Ni is extracted from an extrapolation of the known data.

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3

Vincent, Laetitia, Marcel A. Verheijen, Wouter Peeters, et al. "Epitaxy of Hexagonal Ge-2H : Lessons from in Situ TEM Observations." ECS Meeting Abstracts MA2024-02, no. 32 (2024): 2340. https://doi.org/10.1149/ma2024-02322340mtgabs.

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Silicon and Germanium crystallize in the cubic diamond structure 3C with which they dominate definitely the electronics. Playing on crystal phases in semiconductors occurs to be a valuable mean of electronic band engineering. Remarkably, the hexagonal 2H phase of SiGe turns to get a direct band gap with light emission capabilities within a specific composition range (Si<35%). This material holds the promise to fill the gap between electronics and photonics industry using group IV semiconductors. We use GaAs NWs with the wurtzite structure as a template to create both (1) core/shell and (2)

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4

Nader, Richard, and Jörg Pezoldt. "Quantitative Evaluation of Strain in Epitaxial 2H-AlN Layers." Advanced Materials Research 324 (August 2011): 213–16. http://dx.doi.org/10.4028/www.scientific.net/amr.324.213.

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To improve the quality of AlN layer deposit on SiC/Si, different Ge amounts (0.25, 0.5, 1, 2ML) were deposited before the carbonization process at the silicon substrate in order to reduce the lattice parameters mismatch between Si and SiC grown layers. The residual stress of the hexagonal AlN layers derives from the phonon frequency shifts of the E1(TO) phonon mode. The crystalline quality of the AlN layer is correlated to and investigated by the full width of the half maximum (FWHM) and the intensity of E1(TO) mode of the 2H-AlN. Best crystalline quality and lower stress value are found in th

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5

Galanopoulos, S., M. Serris, G. Perdikakis, et al. "Cross Section Measurements on Isotopes of Ge and Hf Using the Activation Technique." HNPS Proceedings 14 (December 5, 2019): 167. http://dx.doi.org/10.12681/hnps.2267.

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Cross section measurements of neutron induced reactions on isotopes of Ge and Hf have been determined at energies 8.8, 9.6, 10.6, 11.1, 11.4 MeV using the activation technique. Neutrons produced by the 2H(d,n)3He reaction were used to irradiate pellets of natural Ge and Hf02- The neutron flux at the target position was determined using the 27Al(n,a)24Na, 93Nb(n,2n)92mNb and 197Au(n,2n)196Au reference reactions. HPGe detectors of relative efficiency εΓ=80% and 55% were used to determine the decay of the produced unstable nuclei. The cross section values were compared with those taken from the l

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6

Hinderberger, S., S. Q. Xiao, K. H. Westmacott, and U. Dahmen. "Shape training of Ge precipitates in an Al-1.8at% Ge alloy." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 690–91. http://dx.doi.org/10.1017/s0424820100171183.

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Ge precipitates in Al are known to form in a rich variety of shapes and orientation relationships. In this work it is shown that initial non-equilibrium shapes such as plates, laths, needles and tetrahedra can be induced to change to the equilibrium shape of an octahedron by proper temperature cycling. Analysis of this effect in bulk samples was complemented by direct observations of its mechanisms during in-situ temperature cycling.A bulk sample of an Al-1.8at%Ge alloy was solid solution annealed at 420°C for 2h, quenched in ice water, pre-aged at room temperature for 72h and then annealed fo

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7

Bodé, Susan, Marianne Dreyer, and Gorm Greisen. "Gastric Emptying and Small Intestinal Transit Time in Preterm Infants: a Scintigraphic Method." Journal of Pediatric Gastroenterology and Nutrition 39, no. 4 (2004): 378–82. http://dx.doi.org/10.1002/j.1536-4801.2004.tb00870.x.

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ABSTRACTObjectives:Practical methods to determine gastric emptying (GE) and small intestinal transit time in preterm infants are required. The aim of this study was to develop a scintigraphic method to determine GE and small intestinal transit time in preterm infants which produce minimal radiation exposure and physical disturbance in these infants.Methods:Ten premature infants were studied. Median (and range) for gestational age was 28.9 (26–33) weeks, postnatal age was 19 (6–37) days, birth weight was 1194 (687–2300) grams and feeding volume was 173 (6–205) mL/kg/day. Nine of the patients we

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8

Wu, Zhenyu, Xinlu Cheng, and Hong Zhang. "Two-dimensional diamane-like Si2C(Ge)2H2 and Si2C(Ge)2H: Wide bandgap and bipolar magnetic semiconductors." Journal of Magnetism and Magnetic Materials 566 (January 2023): 170310. http://dx.doi.org/10.1016/j.jmmm.2022.170310.

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9

Pocha, Regina, and Dirk Johrendt. "Kristallstrukturen und elektronische Eigenschaften von Ge1/3NbS2 und Ge1/4NbS2 / Crystal Structures and Electronic Properties of Ge1/3NbS2 and Ge1/4NbS2." Zeitschrift für Naturforschung B 57, no. 12 (2002): 1367–74. http://dx.doi.org/10.1515/znb-2002-1205.

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Single crystals of the intercalation compounds Ge1/3NbS2 andGe1/4NbS2 have been prepared by heating of the elements at 1073 K and by chemical transport with iodine at 923 to 1073 K. Their crystal structures were determined by single crystal X-ray methods.Ge1/3NbS2 (P63/mcm, a=5.767(1), c=13.518(3) Å, Z = 6) crystallizes with a superstructureof 2H-NbS2, characterized by layers of edge-sharing NbS6 trigonal prisms. The Ge atoms in the octahedral voids of the van der Waals gap are sixfold coordinated by sulfur. The NbS2-sublattice of Ge1/4NbS2 (P63/mmc, a = 3.339(1), c = 37.326(7) Å , Z = 6) repr

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10

Chasapoglou, Sotirios, Michael Axiotis, George Gkatis, et al. "Cross Section Measurements of (n,x) Reactions at 17.9 MeV Using Highly Enriched Ge Isotopes." HNPS Advances in Nuclear Physics 28 (October 17, 2022): 135–41. http://dx.doi.org/10.12681/hnps.3621.

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Τhe 70Ge(n,2n)69Ge, 72Ge(n,a)69mZn, 72Ge(n,p)72Ga and 73Ge(n,p)73Ga reactions have been measured by means of the activation technique at neutron energy 17.9 MeV. The quasimonoenergetic neutron beam was produced via the 2H(d,n)3He reaction at the 5.5 MV Tandem Van de Graaff accelerator of NCSR “Demokritos.” Isotopically highly enriched targets of 70Ge, 72Ge and 73Ge, provided by the nTOF collaboration at CERN, have been used, thus allowing accurate cross section measurements since no corrections are needed to compensate for the parasitic reactions from neighboring isotopes that exist in the cas

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Дисертації з теми "Ge-2H"

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Melhem, Hassan. "Epitaxial Growth of Hexagonal Ge Planar Layers on Non-Polar Wurtzite Substrates." Electronic Thesis or Diss., université Paris-Saclay, 2025. http://www.theses.fr/2025UPAST011.

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Le silicium et le germanium, qui cristallisent dans la structure cubique du diamant (notée 3C), ont été les piliers de l'industrie électronique grâce à leurs propriétés intrinsèques. Néanmoins, l'ingénierie des phases cristallines métastables a émergé comme une méthode puissante pour ajuster les structures de bande électronique, ouvrant la voie à de nouvelles fonctionnalités tout en maintenant une compatibilité chimique. Notamment, le Ge dans la phase hexagonale 2H présente un gap direct de 0,38 eV. L'alliage SixGe(1-x)-2H présente une émission lumineuse intense avec une longueur d'onde modula

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Тези доповідей конференцій з теми "Ge-2H"

1

Ryzhkov, V. A., та I. N. Pyatkov. "Prompt γ and neutron spectrometry of intense nanosecond ion bunches collectively accelerated in a Luce diode". У 8th International Congress on Energy Fluxes and Radiation Effects. Crossref, 2022. http://dx.doi.org/10.56761/efre2022.s1-p-041101.

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Instantaneous time-of-flight spectrometry of neutrons (nToF) and γ‑spectrometry from nuclear reactions generated by nanosecond proton and 12C ion bunches collectively accelerated in a Luce diode at a voltage across the diode of 200–300 kV has been thoroughly researched. A two-channel γ‑spectrometer with time resolution of 2.5 ns enables a prompt control of number and energy of collectively accelerated protons in their separate bunches dumped into a sustainable and refractory B4C target. Combination of nuclear reactions 10B(p,αγ)7Be, 12C(p,γ)13N, and 11B(p,γ)12C was used to characterize the int

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