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Готові списки джерел за темами / Grain boundary electron scattering / Статті в журналах

Щоб переглянути інші типи публікацій з цієї теми, перейдіть за посиланням: Grain boundary electron scattering.

Статті в журналах з теми "Grain boundary electron scattering"

Автор: Grafiati

Опубліковано: 28 травня 2022

Оновлено: 31 липня 2025

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1

VANCEA, J. "UNCONVENTIONAL FEATURES OF FREE ELECTRONS IN POLYCRYSTALLINE METAL FILMS." International Journal of Modern Physics B 03, no. 10 (1989): 1455–501. http://dx.doi.org/10.1142/s0217979289000956.

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New experimental results concerning basic electronic properties of fine grained metallic films call for theoretical models differing from standard theories: 1) The d.c. conductivity depends on the number of electrons crossing the grain boundary potentials along their background scattering length. An intrinsic scattering length for the whole polycrystal cannot be defined. 2) The Hall coefficient depends on the grain size. Below a “cut-off grain size”, electrons with p-symmetry are virtually confined within the grains. Consequently a virtual free electron value is observed. 3) The work function

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2

Silcox, J. "Electron Scattering with an Atomic Sized Probe." Microscopy and Microanalysis 6, S2 (2000): 102–3. http://dx.doi.org/10.1017/s1431927600033006.

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It is the presence of local variations in atomic and electronic structure that often gives rise to intriguing properties of materials. Control of material properties then rests on detection of the local variations in the materials, determination of the origin of those variations and then understanding how such variations can be controlled to achieve a desired functionality. Recent examples using STEM with an atomic sized probe (∼2.2 Å) include studies of the bonding at grain boundaries in nickel rich Ni3Al doped with boron. EELS measurements revealed changes in the d-hole density-of-states tha

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3

Kumar, Sunil, and George C. Vradis. "Thermal Conductivity of Thin Metallic Films." Journal of Heat Transfer 116, no. 1 (1994): 28–34. http://dx.doi.org/10.1115/1.2910879.

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This study examines the effect of transverse thickness on the in-plane thermal conductivity of single crystal, defect-free, thin metallic films. The imposed temperature gradient is along the film and the transport of thermal energy is predominantly due to free electron motion. The small size necessitates an evaluation of the Boltzmann equation of electron transport along with appropriate electron scattering boundary conditions. Simple expressions for the reduction of conductivity due to increased dominance of boundary scattering are presented and the results are compared with other simplified

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4

Zhou, Tianji, Atharv Jog, and Daniel Gall. "First-principles prediction of electron grain boundary scattering in fcc metals." Applied Physics Letters 120, no. 24 (2022): 241603. http://dx.doi.org/10.1063/5.0098822.

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The electron reflection probability r at symmetric twin boundaries Σ3, Σ5, Σ9, and Σ11 is predicted from first principles for the eight most conductive face-centered cubic (fcc) metals. r increases with decreasing interplanar distance of atomic planes parallel to the boundary. This provides the basis for an extrapolation scheme to estimate the reflection probability rr at random grain boundaries, which is relatively small, rr = 0.28–0.39, for Cu, Ag, and Au due to their nearly spherical Fermi surfaces, but approximately two times higher for Al, Ca, Ni, Rh, and Ir with a predicted rr = 0.61–0.7

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5

Takata, Naoki, Kenichi Ikeda, Hideharu Nakashima, and Nobuhiro Tsuji. "In Situ EBSP Analysis of Grain Boundary Migration during Recrystallization in Pure Aluminum Foils." Materials Science Forum 558-559 (October 2007): 351–56. http://dx.doi.org/10.4028/www.scientific.net/msf.558-559.351.

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Grain boundary mobility in preferential growth of cube grains ({100}<001>) was evaluated by in-situ electron back scattering diffraction pattern (EBSP) analysis in order to clarify the fundamental mechanism of primary recrystallization in pure aluminum foils of 99.9% purity thermo-mechanically processed in the industrial production route for aluminum foils for electrolytic capacitors. We have carried out the continuous EBSP measurements during recrystallization of the aluminum foils heated to various temperatures in the chamber of scanning electron microscopy (SEM). We have succeeded in

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6

Alzobaie, Ammar Rahman, and May AbdulSattar Mohammed. "The Effect Scattering of Phonons, Surface and Grain Boundary on Electrical Properties for Magnesium and Palladium Nano Metallic." Journal of Physics: Conference Series 3028, no. 1 (2025): 012017. https://doi.org/10.1088/1742-6596/3028/1/012017.

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Abstract Nanometals, i.e., metals structured at the nanoscale, have gained increasing attention due to their excellent electronic applications. In the context of improving the electrical properties of nanometals, this study investigates the effect of phonon scattering, surface boundaries and grain boundaries on the electrical properties of magnesium (Mg) and palladium (Pd). An approximate equation is derived from the solution of the Boltzmann electron distribution equation by the Fuchs-Sondheimer and Mayadas-Shatzkes models, which takes into account the resistivity of the metal, as well as the

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7

Zhang, Zhi Guo. "Bridge Action of Double-Deck Films Interface Electrons." Applied Mechanics and Materials 217-219 (November 2012): 1038–42. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.1038.

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When both SnO2 film and a-Si film with infinite square resistance are deposited on an ITO film, the square resistance of the ITO film notably decreases. This phenomenon is more remarkable, when an ITO film has large square resistance. We believe that the films are composed of spaced crystalline grains. The film resistance is due to crystal boundary scattering carriers. Smaller crystalline grain and greater distance to the crystal boundary lead to fiercer scattering. The crystalline grains of the SnO2 film and a-Si film short-circuit the spaced ITO grains to form bridges so interface electrons

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8

Guo, Xitao, Yonghao Tan, Yupei Hu, et al. "Effect of microplate size on the semiconductor–metal transition in VO₂ thin films." New Journal of Chemistry 46, no. 16 (2022): 7497–502. http://dx.doi.org/10.1039/d2nj01324j.

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The degree of changes in resistivity (Δρ) becomes more prominent as the VO2 film microplate size grows, which is primarily attributed to a reduced probability of electron scattering with decreasing grain boundary density.

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9

fendle, Valerie, and Brian Ralph. "Clustering of coincident site lattice boundaries in polycrystals." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 630–31. http://dx.doi.org/10.1017/s0424820100105217.

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The distribution of coincident site lattice (CSL) and other geometrically special boundaries have been analysed in the form of “grain misorientation texture” (GMT) plots for several systems (pure nickel, a number of austenitic stainless steels and a complex superalloy, 1-5). Several heat treatment conditions have been investigated for each system. Principally, electron back scattering (EBS) in a scanning electron microscope has been used to collect the “microtexture” (i.e. grain specific) data which combines the considerable advantages of bulk specimen texture analysis, grain environment speci

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10

Qiu, T. Q., and C. L. Tien. "Size Effects on Nonequilibrium Laser Heating of Metal Films." Journal of Heat Transfer 115, no. 4 (1993): 842–47. http://dx.doi.org/10.1115/1.2911378.

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Picosecond and sub-picosecond lasers have become important tools in the fabrication and study of microstructures. When the laser pulse duration becomes comparable with or less than the characteristic time of energy exchange among microscopic energy carriers, the excited carriers are no longer in thermal equilibrium with the other carriers, creating a nonequilibrium heating situation. The presence of interfaces in metals provides additional scattering processes for electrons, which in turn affects the nonequilibrium heating process. This work studies size effects, due to both surface scattering

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11

Lau, Lik Nguong, Kean Pah Lim, Amirah Natasha Ishak, et al. "The Physical Properties of Submicron and Nano-Grained La0.7Sr0.3MnO3 and Nd0.7Sr0.3MnO3 Synthesised by Sol–Gel and Solid-State Reaction Methods." Coatings 11, no. 3 (2021): 361. http://dx.doi.org/10.3390/coatings11030361.

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La0.7Sr0.3MnO3 (LSMO) and Nd0.7Sr0.3MnO3 (NSMO) possess excellent colossal magnetoresistance (CMR). However, research work on the neodymium-based system is limited to date. A comparative study between LSMO and NSMO prepared by sol–gel and solid-state reaction methods was undertaken to assess their structural, microstructural, magnetic, electrical, and magneto-transport properties. X-ray diffraction and structure refinement showed the formation of a single-phase composition. Sol–gel-synthesised NSMO was revealed to be a sample with single crystallite grains and exhibited intriguing magnetic and

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12

Zhao, Kai, Yuanzhao Hu, Gang Du, Yudi Zhao, and Junchen Dong. "Mechanisms of Scaling Effect for Emerging Nanoscale Interconnect Materials." Nanomaterials 12, no. 10 (2022): 1760. http://dx.doi.org/10.3390/nano12101760.

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The resistivity of Cu interconnects increases rapidly with continuously scaling down due to scatterings, causing a major challenge for future nodes in M0 and M1 layers. Here, A Boltzmann-transport-equation-based Monte Carlo simulator, including all the major scattering mechanisms of interconnects, is developed for the evaluation of electron transport behaviors. Good agreements between our simulation and the experimental results are achieved for Cu, Ru, Co, and W, from bulk down to 10 nm interconnects. The line resistance values of the four materials with the inclusion of liner and barrier thic

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13

Browning, N. D., D. J. Wallis, P. D. Nellist, and S. J. Pennycook. "Determining Atomic Structure-Property Relationships at Grain Boundaries." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 334–35. http://dx.doi.org/10.1017/s0424820100164131.

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Atomic scale effects at grain boundaries are known to play a dominant role in controlling the bulk properties of many materials. However, a detailed understanding of this role is complicated by the tendency for boundaries to behave in a “non-ideal” manner, i.e. the boundary plane can change on the scale of a few nanometers, altering the number of vacancies and impurities and the presence of second phases. The crucial first step to engineering boundary properties is therefore the ability to observe these changes experimentally with both atomic resolution and sensitivity. Such a capability is pr

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14

Gazder, Azdiar A., Vladimir Bata, Sujoy S. Hazra, and Elena V. Pereloma. "Recrystallisation Behaviour of Low Carbon Steel with and without Addition of Chromium." Materials Science Forum 715-716 (April 2012): 679–84. http://dx.doi.org/10.4028/www.scientific.net/msf.715-716.679.

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The effects of 0.74wt% Cr addition on the recrystallisation kinetics of low carbon (LC) steel was investigated using Vickers hardness testing, optical metallography and Electron Back-Scattering Diffraction (EBSD). Compared to the unalloyed steel, Cr addition significantly delays the time for recrystallisation and increases the JMAK pre-exponential factor (k) by an order of magnitude. During initial softening, EBSD returned similar orientations for nucleated and growing grain fractions in both steels. However with longer annealing times the micro-texture of recrystallised grains differs from th

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15

Major, S., A. Banerjee, and K. L. Chopra. "Electrical and optical transport in undoped and indium-doped zinc oxide films." Journal of Materials Research 1, no. 2 (1986): 300–310. http://dx.doi.org/10.1557/jmr.1986.0300.

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Electrical conduction in undoped and indium-doped ZnO films in as-deposited, vacuum-annealed and oxygen-annealed states has been studied. The as-deposited and oxygen-annealed films contain a large density (≥ 1017 m−2) of trap states due to chemisorbed oxygen at the grain boundaries. The role of these trap states has been analyzed in terms of the grain boundary carrier trapping model. The vacuum-annealed films are free of chemisorbed oxygen, and the conduction in these films is controlled by scattering due to ionized impurities and grain boundary barriers. In the case of undoped ZnO films, intr

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16

McGibbon, M. M., N. D. Browning, M. F. Chisholm, et al. "Atomic-resolution characterization of an SrTiO3 grain boundary in the STEM." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 972–73. http://dx.doi.org/10.1017/s0424820100172590.

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High-resolution Z-contrast imaging in the scanning transmission electron microscope (STEM) forms an incoherent image in which changes in atomic structure and composition across an interface can be interpreted intuitively without the need for preconcieved atomic structure models. Since the Z-contrast image is formed by electrons scattered through high angles, parallel detection electron energy loss spectroscopy (PEELS) can be used simultaneously to provide complementary chemical information on an atomic scale. The fine structure in the PEEL spectra can be used to investigate the local electroni

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17

Lee, Ho-Chul, and O. Ok Park. "Electron scattering mechanisms in indium-tin-oxide thin films: grain boundary and ionized impurity scattering." Vacuum 75, no. 3 (2004): 275–82. http://dx.doi.org/10.1016/j.vacuum.2004.03.008.

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18

Knabchen, A. "Electron transport through planar defects: a new description of grain boundary scattering." Journal of Physics: Condensed Matter 3, no. 36 (1991): 6989–99. http://dx.doi.org/10.1088/0953-8984/3/36/004.

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19

He, Qinyu, Qing Hao, Xiaowei Wang, et al. "Nanostructured Thermoelectric Skutterudite Co1−xNixSb3 Alloys." Journal of Nanoscience and Nanotechnology 8, no. 8 (2008): 4003–6. http://dx.doi.org/10.1166/jnn.2008.469.

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Nanostructured Ni-doped skutterudites Co1−xNixSb3 (with x ranging from 0.01 to 0.09) were prepared by ball milling and direct-current induced hot press. It was found that the thermal conductivity was reduced due to strong electron–phonon scattering from Ni-doping as well as phonon scattering from the increased grain boundary of the nanostructures. A maximum dimensionless figure-of-merit of 0.7 was obtained in Co0.91Ni0.09Sb3 at 525 °C.

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20

Kajihara, Katsura, Kazuhide Matsumoto, and Katsushi Matsumoto. "In Situ SEM-EBSP Observations of Recrystallization Texture Formation in Al-3mass%Mg Alloy." Materials Science Forum 519-521 (July 2006): 1579–84. http://dx.doi.org/10.4028/www.scientific.net/msf.519-521.1579.

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This study presents in situ observations of recrystallization texture formation in Al-3mass%Mg using SEM concurrent with electron back scattering pattern (EBSP) with hot stage. In the present discussion, the emphasis is on the characteristics of the preferred growth or the shrinkage of Cube and other oriented grains. The in-situ observations of recrystallization demonstrate clearly that the nucleation, growth and shrinkage of recrystallized grains occur simultaneously in each orientation in each region. The overall development of recrystallization texture depends on the balance of nucleation/g

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21

Buban, J. P., J. Zaborac, H. Moltaji, G. Duscher, and N. D. Browning. "Investigating Ca Segregated to a Grain Boundaries in MgO Using Multiple Scattering Analysis of Electron Energy Loss Spectra." Microscopy and Microanalysis 4, S2 (1998): 776–77. http://dx.doi.org/10.1017/s1431927600024004.

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Although grain boundaries typically account for only a small fraction of a material, they can have far reaching effects on the overall bulk scale properties. These effects are usually simply linked to the boundary having a different atomic arrangement to the bulk. A necessary first step in understanding the structure-property relationships is therefore a detailed determination of the boundary structure.One means of obtaining detailed information on the structure of grain boundaries is through correlated Z-contrast imaging and electron energy loss spectroscopy (EELS). The Z-contrast image gener

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22

Lee, Jang-Hyeong, and Tae-Sik Cho. "Sintering Behaviors of Pt Nanopowders with Different Particle Sizes: A Real-Time Synchrotron X-ray Scattering Study." Journal of Nanoelectronics and Optoelectronics 16, no. 5 (2021): 849–53. http://dx.doi.org/10.1166/jno.2021.3012.

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We have studied the solid state sintering behaviors of platinum (Pt) nanopowders with different particle sizes using real-time synchrotron X-ray scattering in air. Pt powders with large particle size of 101 nm at room temperature (RT) showed a defect-free crystal domain size of 10 nm. Most of these powders exhibited multiple grains inside the particle. Solid state sintering of the powders mainly occurred through surface diffusion of Pt atoms near 145 °C, grain boundary diffusion from 150 to 400 °C, and then grain growth above 550 °C. Meanwhile, Pt nanopowders with small particle size of 18 nm

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23

Zhang, Yuewei, Xinqiang Wang, Xiantong Zheng, et al. "Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films." Applied Physics Express 6, no. 2 (2013): 021001. http://dx.doi.org/10.7567/apex.6.021001.

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24

Pham, Anh Thanh Tuan, Dung Van Hoang, Truong Huu Nguyen, Thang Bach Phan, and Vinh Cao Tran. "Impacts of the thickness on the electron mobility of gallium and hydrogen co– doped zinc oxide thin films." Science and Technology Development Journal - Natural Sciences 2, no. 2 (2019): 82–87. http://dx.doi.org/10.32508/stdjns.v2i2.738.

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this work, impacts of the thickness on electron mobility of Ga and H2 co-doped ZnO (HGZO) thin films were investigated. The HGZO films were prepared on glass substrate by using magnetron sputtering from ceramic Ga-doped ZnO (GZO) target in the gas mixture of argon and hydrogen. Based on the Hall measurement, the mobility enhanced fastly from 44.6 to 53.4cm2/Vs with the increasing thickness from 350 to 900 nm, then tends to be saturated at ~55cm2/Vs with further thickness. Most of the films achieve the mobility of >50cm2/Vs, which is very high value for sputtered TCOs thin films. The thickne

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25

Yin, Xue Song, Wu Tang, Xiao Long Weng, and Long Jiang Deng. "Effects of Non-Continuous TiO₂ Buffer Layers on Structural and Electrical Properties of Indium Tin Oxide Thin Films." Advanced Materials Research 79-82 (August 2009): 739–42. http://dx.doi.org/10.4028/www.scientific.net/amr.79-82.739.

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Indium Tin Oxide (ITO) films on polyethylene terephthalate (PET) sandwiching TiO2 buffer layers with different sputtering time have been prepared by rf-magnetron sputtering. Scanning Electron Microscope images of the TiO2 buffer layers showed the non-continuous growth in a typical sputtered film growing process. (400) oriented diffraction peaks appeared in all the ITO/TiO2/PET films. The electrical properties were measured by four point probe method and van der Pauw method. The variations of the resistivity and hall mobility on the sputtering time of TiO2 layer were studied. Furthermore, an ex

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26

Almajedi, Reza Fahad, and May A. S. Mohammed. "The effect of scattering of phonons, size and grain boundary on electrical properties for (Co and Ni) nano metals." Journal of Physics: Conference Series 2857, no. 1 (2024): 012009. http://dx.doi.org/10.1088/1742-6596/2857/1/012009.

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Abstract In this study of the electrical properties of metals (Nickel, Cobalt), we utilize the Fuchs-Sondheier model to analyse the surface scattering of electrons, commonly known as the surface scattering coefficient (p). Our findings reveal the impact of thickness on electrical resistivity for these metals. the Mayadas-Shatzkes model show speaks to all sorts of scattering that influence grain boundaries and known as grain boundary reflection coefficient (R), two of the foremost critical essential components that utilized in assessing measure impact agreeing to theoretical considers. influenc

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27

Michael, J. R., and A. D. Romig. "High-spatial-resolution x-ray microanalysis: Comparison of experiment and incoherent scattering calculations." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 590–91. http://dx.doi.org/10.1017/s0424820100148782.

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There have been many experimental efforts to measure the spatial resolution for x-ray microanalysis in the analytical electron microscope (AEM). There have been three commonly utilized specimen geometries in these experiments: 1) segregant at a grain boundary, 2) interphase boundaries oriented parallel to the electron beam, and most recently 3) spherical particles embedded at various depths in thin foils. The results of many of these experiments have been analyzed with a number of models for the broadening of the electron beam as it traverses the thin foil. These models are typically based on

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28

Dimmich, R., and F. Warkusz. "Electrical Conductivity of Thin Wires." Active and Passive Electronic Components 12, no. 2 (1986): 103–9. http://dx.doi.org/10.1155/1986/75953.

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An expression for the electrical conductivity of thin metal wires of a circular cross-section has been derived taking account of conduction-electron scattering at grain boundaries and the wire surface. An angular-dependent specularity parameter has been introduced and possible fluctuations of the wire diameter along its length have been taken into account. Boltzmann transport equations have been solved for the boundary conditions proposed by Dingle.

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29

Zhu, Dan Yang, Liang Zhen, Chen Lin, and Wen Zhu Shao. "High Temperature Deformation Mechanism of 7075 Aluminum Alloy." Key Engineering Materials 353-358 (September 2007): 691–94. http://dx.doi.org/10.4028/www.scientific.net/kem.353-358.691.

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This paper presents the high temperature deformation behavior of 7075 aluminum alloy after T6 heat treatment by using electron tensile test machine with a temperature range of 230 - 440 °C, strain rate of 0.01 s-1, deformation of 50 % and 100 %, respectively. The morphology of the fractured surfaces, dislocation and change of sub-grains before and after the tensile test were investigated by using scanning electron microscope (SEM) and electron back scattering diffraction (EBSD) technique. The results show that the fracture mechanism of 7075 aluminum alloy was ductile rupture. The thermal defor

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30

Vogel, Michael, Oliver Kraft, Peter Staron, Helmut Clemens, Rainer Rauh, and Eduard Arzt. "Microstructure of die-cast alloys Mg–Zn–Al(–Ca): a study by electron microscopy and small-angle neutron scattering." International Journal of Materials Research 94, no. 5 (2003): 564–71. http://dx.doi.org/10.1515/ijmr-2003-0099.

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Abstract The microstructure of a magnesium die-cast alloy with 8 wt.% Zn and 5 wt.% Al (ZA85) and of two alloy modifications with 0.3 and 0.9 wt.% Ca (ZACa8503 and ZACa8509) are compared. Optical, scanning electron and transmission electron microscopy (TEM) were used to study the microstructure in as-cast and annealed conditions. Small-angle neutron scattering (SANS) measurements were carried out to characterize the early stages of the precipitation process. The die-cast microstructure of ZA85, ZACa8503 and ZACa8509 consists of dendritic α-Mg grains and coarse intermetallic grain-boundary phas

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31

Nguyen, Tai D., Ronald Gronsky, and Jeffrey B. Kortright. "Fresnel fringe effects at interfaces of thin multilayer structures." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 442–43. http://dx.doi.org/10.1017/s042482010017534x.

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Recent developments in the TEM Fresnel-fringe technique have provided an alternative method to the determination of structures and morphology of interfaces in multilayer thin film structures. This method has been employed in the investigation of structures and defects in grain boundaries, dislocations, precipitate platelets, twin boundaries, metal interfaces, and multilayer structures. It has been demonstrated that the fringe spacing primarily relates to the layer thickness, while the fringe contrast as a function of defocus relates to the magnitude of the localized change in the scattering po

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32

Browning, N. D., M. M. McGibbon, M. F. Chisholm, and S. J. Pennycook. "Atomic resolution determination of the structure and chemistry of ceramic grain boundaries." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 320–21. http://dx.doi.org/10.1017/s0424820100137975.

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Characterization of grain boundaries in ceramics is complicated by the multicomponent nature of the materials, the presence of secondary phases, and the tendency for the grain boundary plane to “wander” on the length scale of a few nanometers. However, recent developments in the scanning transmission electron microscope (STEM) have now made it possible to correlate directly the structure, composition and bonding at grain boundaries on the atomic scale. This direct experimental characterization of grain boundaries is achieved through the combination of Z-contrast imaging (structure) and electro

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33

Mar, S. Y., J. S. Liang, C. Y. Sun, and Y. S. Huang. "Grain boundary scattering in ruthenium dioxide thin films." Thin Solid Films 238, no. 1 (1994): 158–62. http://dx.doi.org/10.1016/0040-6090(94)90667-x.

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34

Narayana Murty, S. V. S., Shiro Torizuka, and Kotobu Nagai. "Microstructural Evolution during Simple Heavy Warm Deformation of a Low-Carbon Steel." Materials Science Forum 512 (April 2006): 49–54. http://dx.doi.org/10.4028/www.scientific.net/msf.512.49.

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We examined the microstructure development in low carbon steel (0.15% C) during heavy warm deformation (HWD) using field emission scanning electron microscopy (FESEM) and electron back-scattering diffraction (EBSD). Plane strain compression tests have been conducted in the temperature range of 773-923 K at strain rates of 0.01 s-1 and 1 s-1 with the specimens deformed to 25% of their original thickness. We summarize the strain rate and temperature into the Zener-Hollomon parameter and investigate its variation with plastic strain on the basis of the evolved microstructures and grain boundary c

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35

Mao, Fang Fang, Xian Hao Wang, Qiang Zheng, Fa Qiang Zhang, Zhao Quan Zhang, and Hui Gu. "Grain Boundary Phase Analysis for Y₂O₃-Doped AlN Ceramics." Key Engineering Materials 544 (March 2013): 162–66. http://dx.doi.org/10.4028/www.scientific.net/kem.544.162.

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Y2O3 is a common sintering additive of AlN ceramics to achieve densification and remove the oxygen impurity, resulting in a typically grain boundary phase (GBP) Y3Al5O12 (YAG). Two AlN ceramics with 3wt% and 5wt% Y2O3 intended for thermal conductivity study were sintered at 1800 °C for 4h. X-ray diffraction (XRD) indicates that GBP could either be YAG or YAP (YAlO3) phase, while the selected area electron diffraction (SAED) and energy dispersive X-ray (EDX) in TEM identifies it as YAP instead of YAG. The electron back-scattering diffraction (EBSD) in SEM further confirms the general presence o

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36

Song, Kuk Hyun, Han Sol Kim, and Won Yong Kim. "Investigation on Mechanical Properties and Formability of Cross Roll Rolled Ni-10Cr Alloy." Materials Science Forum 724 (June 2012): 476–80. http://dx.doi.org/10.4028/www.scientific.net/msf.724.476.

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This study evaluated the microstructure and mechanical properties enhancement of cross roll rolled Ni-10Cr alloy, comparing with conventional rolled material. Cold rolling was carried out to 90% thickness reduction and subsequently annealed at 700 °C for 30 min to obtain the fully recrystallized microstructure. For annealed materials after rolling, to investigate the grain boundary characteristic distributions, electron back-scattering diffraction technique was introduced. Application of cross roll rolling on Ni-10Cr alloy contributed to the notable grain refinement, consequently, average grai

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37

Rogozhin, A. E., and O. G. Glaz. "Interconnects Materials for Integrated Circuit Technology Below 5 Nm Node." Микроэлектроника 53, no. 1 (2024): 102–16. http://dx.doi.org/10.31857/s0544126924010111.

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As the integrated circuits is scaled few problems appear at the lowest levels of interconnects — high resistance of copper lines and copper electromigration. High resistance is connected with the increasing contribution of the electron surface scattering and grain boundary scattering. Moreover, copper lines require barrier layers decreasing the cross-section of the copper part of the line. Also the resistance of copper to electromigration is insufficient for the technology node below 5nm. Therefore, it is necessary to look for alternative materials to replace copper, which will provide high re

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38

Zhang, Jun Feng, Wen Hui Ma, Xiu Hua Chen, Cong Zhang, and Kui Xian Wei. "Research on Effects of Annealing and Al Gettering on Electrical Properties of Upgraded Metallurgical Grade Multicrystalline Silicon." Advanced Materials Research 581-582 (October 2012): 483–86. http://dx.doi.org/10.4028/www.scientific.net/amr.581-582.483.

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Annealing and Al gettering were performed on upgraded metallurgical grade multicrystalline silicon (UMG multi-Si) wafers with a purity of 99.999%. The dislocation and grain boundaries of samples were characterized by optical microscopy and electron back scattering diffraction (EBSD), respectively. The minority carrier lifetime and resistivity of the Si wafers were measured using microwave photoconductance decay and four-point probe techniques, respectively. The results show that the number of dislocations in Si wafers reduced obviously after annealing and Al gettering for 2 hours at 600～1100°C

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39

Lejček, Pavel, Aleš Jäger, Viera Gärtnerová, Jaroslava Vaníčková, Jiří Děd, and Jakub Haloda. "Structure/Property Relationship in Intergranular Corrosion of Archaeological Silver Artefacts." Materials Science Forum 638-642 (January 2010): 2852–57. http://dx.doi.org/10.4028/www.scientific.net/msf.638-642.2852.

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The knowledge of the structure/property relationship in polycrystalline materials is the basis for successful application of Grain Boundary Engineering. We demonstrate this relationship in the reverse way: from the selective corrosion attack observed in unique sample – loops from excavated necklace dated to the 10th century and manufactured from a Ag–1%Cu alloy – we can deduce the method of manufacturing the objects. Individual grain boundaries in this object were identified by electron back-scattering diffraction. Crystallographic maps of the grain boundaries are confronted with the level of

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40

Takisawa, Kota, and Mutsumi Sugiyama. "Tin monosulfide (SnS) epitaxial films grown by RF magnetron sputtering and sulfurization on MgO(100) substrates." Japanese Journal of Applied Physics 61, no. 2 (2022): 025504. http://dx.doi.org/10.35848/1347-4065/ac3e16.

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Abstract The crystallographic and electrical properties of tin monosulfide (SnS) epitaxial thin films grown by RF magnetron sputtering and sulfurization were investigated. The SnS(040)-oriented films were grown on a MgO(100) substrate. Two types of four-fold rotational symmetrical in-plane orientations, offset by 45° from each other, were observed using X-ray diffraction. The rotational symmetry was also observed using cross-sectional transmission electron microscopy. The electrical properties of the SnS films were controlled by varying the sulfurization temperature, and the carrier transport

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41

UTLU, G. "INTERESTING RESISTIVITY BEHAVIOR OF THE Ag–Ni–Si SILICIDE FILMS FORMED AT 850°C BY RAPID THERMAL ANNEALING OF THE Ag–Ni/Si FILMS." International Journal of Modern Physics B 25, no. 28 (2011): 3773–83. http://dx.doi.org/10.1142/s0217979211101892.

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The temperature-dependent resistivity measurements of our Ag – Ni – Si silicide films with 51–343 nm thicknesses are studied as a function of temperature and film thickness over the temperature range of 100–900 K. The most striking behavior is that the variation of the resistivity of the Ag – Ni – Si silicide films with temperature exhibits an unusual temperature-dependent behavior with respect to those of the transition and untransition metals. Our measurements show that the total resistivity of the Ag – Ni – Si silicide films increases linearly with temperature up to a Tm temperature at whic

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42

Keblinski, P., D. Wolf, F. Cleri, S. R. Phillpot, and H. Gleiter. "On the Nature of Grain Boundaries in Nanocrystalline Diamond." MRS Bulletin 23, no. 9 (1998): 36–41. http://dx.doi.org/10.1557/s0883769400029353.

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The low-pressure synthesis of rather pure nanocrystalline diamond films from fullerene precursors suggests that for a small enough grain size the diamond structure may be energetically preferred over graphite. Because of the small grain size of typically about 15 nm in these films, a significant fraction of the carbon atoms is situated in the grain boundaries (GBs). The surprisingly high wear resistance of these films even after the substrate is removed and their high corrosion resistance suggest that the grains are strongly bonded. Grain-boundary carbon is also believed to be responsible for

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43

Zhu, Y. F., X. Y. Lang, W. T. Zheng, and Q. Jiang. "Electron Scattering and Electrical Conductance in Polycrystalline Metallic Films and Wires: Impact of Grain Boundary Scattering Related to Melting Point." ACS Nano 4, no. 7 (2010): 3781–88. http://dx.doi.org/10.1021/nn101014k.

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44

KUMARI, V. RAJA, G. VENKATAIAH, and P. VENUGOPAL REDDY. "ELECTRICAL BEHAVIOR OF SOME LANTHANUM-BASED RARE EARTH CMR MATERIALS." International Journal of Modern Physics B 19, no. 23 (2005): 3619–29. http://dx.doi.org/10.1142/s021797920503236x.

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A lanthanum-based mixed rare earth manganite system with general composition formula La 0.33 Ln 0.34 Sr 0.33 MnO 3, (where Ln is a rare earth ion) has been prepared by the solid state reaction method. After usual characterization of these materials, a systematic study of the electrical resistivity both as a function of temperature (80–300 K) and magnetic field up to 7 Tesla was undertaken mainly to understand the conduction mechanism. On analyzing the experimental results, it has been concluded that the metallic (ferromagnetic) part of the resistivity (ρ) (below TP) fits with the equation ρ(T)

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45

Chisholm, M. F., and S. J. Pennycook. "Z-Contrast Imaging of Grain-Boundary Core Structures in Semiconductors." MRS Bulletin 22, no. 8 (1997): 53–57. http://dx.doi.org/10.1557/s0883769400033820.

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Interest in semiconductor grain boundaries relates to the development of polycrystalline materials for photovoltaics and integrated-circuit interconnects. Although these structures are responsible for deleterious electrical effects, there are few experimental techniques available to study them at the required atomic scale. Therefore models of the physical processes occurring at grain boundaries have necessarily taken a macroscopic approach. Fortunately recent developments have resulted in tools that provide unprecedented glimpses into these interfaces and that will allow us to address anew the

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46

Gerlach, E. "Grain boundary scattering in DC transport in thin metallic films." physica status solidi (b) 195, no. 1 (1996): 159–66. http://dx.doi.org/10.1002/pssb.2221950118.

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47

Gerlach, E. "Grain Boundary Scattering in Micro- and Nanocrystalline Thin Semiconducting Films." physica status solidi (b) 203, no. 1 (1997): 107–12. http://dx.doi.org/10.1002/1521-3951(199709)203:1<107::aid-pssb107>3.0.co;2-6.

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48

Cui, Xiaoyan, Tingjing Hu, Huangyu Wu, et al. "Charge Carrier Transport Behavior and Dielectric Properties of BaF2:Tb3+ Nanocrystals." Nanomaterials 10, no. 1 (2020): 155. http://dx.doi.org/10.3390/nano10010155.

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The charge carrier behavior and dielectric properties of BaF2:Tb3+ nanocrystals have been studied by alternating current (AC) impedance spectroscopy. The electron and ion coexist in the transport process. The F− ion’s contribution to the total conduction increases with the doping concentration up to 4% and then decreases. Tb doping leads to the increase of defect quantities and a variation of charge carrier transport paths, which causes the increase of the ion diffusion coefficient and the decreases of bulk and grain boundary resistance. When the Tb-doped concentration is higher than 4%, the e

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49

Yamada, Takahiro, Hisao Makino, Naoki Yamamoto, and Tetsuya Yamamoto. "Ingrain and grain boundary scattering effects on electron mobility of transparent conducting polycrystalline Ga-doped ZnO films." Journal of Applied Physics 107, no. 12 (2010): 123534. http://dx.doi.org/10.1063/1.3447981.

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50

Qiang, Lei, Yanli Pei, and Ruohe Yao. "Modeling of hall mobility for In2O3 thin film by metal organic chemical vapor deposition." European Physical Journal Applied Physics 88, no. 1 (2019): 10301. http://dx.doi.org/10.1051/epjap/2019190249.

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In the light of variable temperature (4.2–300 K) Hall-effect measurements a physics-based model for Hall mobility of indium oxide (In2O3), thin film processed by metal organic chemical vapor deposition (MOCVD) has been established. It illustrates the relation among Hall mobility, scattering mechanisms and carrier concentrations exhaustively. Dependence of the potential barrier between grain boundaries on the carrier concentration has been factored in. Concomitantly, account have been taken of exponential tails and the degeneracy in In2O3 film. The proposed model reassured by a comparison of th

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