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Дисертації з теми "HFOB"

Автор: Grafiati

Опубліковано: 3 червня 2025

Оновлено: 31 липня 2025

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1

Lima, Ana Paula Calheiros de. "Efeitos in vitro de soro de pacientes com nefrite lúpica ativa em células de linhagem osteoblástica humana hFOB 1.19." Universidade de São Paulo, 2018. http://www.teses.usp.br/teses/disponiveis/5/5148/tde-20032019-084434/.

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INTRODUÇÃO: Perda óssea é um achado comum em pacientes com Nefrite Lúpica (NL), mesmo naqueles com diagnóstico recente. Algumas evidências indicam um aumento na osteoclastogênese como um dos distúrbios principais no processo de remodelamento ósseo. O objetivo deste estudo foi investigar algumas vias de sinalização (RANKL/OPG, Wnt/Beta-catenin and Th17/IL-17) possivelmente envolvidas na osteoclastogênese anormal detectada em mulheres jovens ao diagnóstico de nefrite lúpica ativa, assim como avaliar a ação da vitamina D (VitD) nesse cenário e sua correlação com fatores inflamatórios. MÉTODOS: Re

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2

Gholami, Behjat. "Functional analyses of candidate genes for osteoporosis : RUNX2 and LRP5 interplay during differentiation of the hFOB human osteoblast cell line." Doctoral thesis, Universitat de Barcelona, 2017. http://hdl.handle.net/10803/471516.

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Osteoporosis is a general skeletal disorder. It is characterized by a low bone mass and a microarchitectural deterioration of bone tissue, which increase bone fragility and susceptibility to fracture. LRP5 is a widely expressed member of the low-density lipoprotein receptor superfamily, which acts as a co-receptor for Wnt. Wnt/β-catenin signaling plays an important role in the development and maintenance of many organs and tissues, among others bone. In bone, LRP5 is expressed by osteoblasts and not by osteoclasts; however, little is known about its regulation. Genetic studies show that LRP5

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3

Lü, Bo. "Growth and characterization of HfON thin films with the crystal structures of HfO2." Thesis, Linköpings universitet, Plasma och beläggningsfysik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-71620.

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HfO2 is a popular replacement for SiO2 in modern CMOS technology. It is used as the gate dielectric layer isolating the transistor channel from the gate. For this application, certain material property demands need to be met, most importantly, a high static dielectric constant is desirable as this positively influences the effectiveness and reliability of the device. Previous theoretical calculations have found that this property varies with the crystal structure of HfO2; specifically, the tetragonal structure possesses the highest dielectric constant (~70 from theoretical calculations) out of

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4

Traoré, Boubacar. "Etude des cellules mémoires résistives RRAM à base de HfO2 par caractérisation électrique et simulations atomistiques." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT037/document.

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La mémoire NAND Flash représente une part importante dans le marché des circuits intégrés et a bénéficié de la traditionnelle miniaturisation de l’industrie des sémiconducteurs lui permettant un niveau d’intégration élevé. Toutefois, cette miniaturisation semble poser des sérieux problèmes au-delà du noeud 22 nm. Dans un souci de dépasser cette limite, des solutions mémoires alternatives sont proposées parmi lesquelles la mémoire résistive (RRAM) se pose comme un sérieux candidat pour le remplacement de NAND Flash. Ainsi, dans cette thèse nous essayons de répondre à des nombreuses questions ou

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5

Gaddipati, Surendra. "Characterization of HfOb2." [Tampa, Fla.] : University of South Florida, 2004. http://purl.fcla.edu/fcla/etd/SFE0000422.

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6

Yang, Fan. "Characterization of HFO2 Capacitors." Fogler Library, University of Maine, 2003. http://www.library.umaine.edu/theses/pdf/YangF2003.pdf.

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7

Ivarsson, Johanna. "Solceller för flerbostadshus : En teknisk rapport för HFAB." Thesis, Högskolan i Halmstad, Energiteknik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-15224.

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This examination paper is about the potential for Solar cells on apartment blocks. The technology with using solar cells for manufacturing electricity, has been on the market for a while, but recently the new installations of solar cells has increased. Solar cells are suited for placements on buildings but are expensive to obtain. The municipal real-estate company is interested in solar cells but wants to know more before they invest in the technology. This report contains an account of the solar cell and a guide to how a connection to the grid is accomplished. The report even contains suggest

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8

Sales, Tatiane da Silva Nascimento. "Estudo de interações hiperfinas em materiais nanoestruturados de HfO2 dopados com Si, Fe, Y, La e HfSiO4 dopado com Fe pela técnica de correlação angular gama-gama perturbada." Universidade de São Paulo, 2018. http://www.teses.usp.br/teses/disponiveis/85/85131/tde-18022019-144920/.

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No presente trabalho é apresentado o estudo sistemático das interações hiperfinas, em compostos de óxido de háfnio (HfO2) dopados com silício (Si), ferro (Fe), ítrio (Y) e lantânio (La) em porcentagens de 5% e 10%. A técnica aplicada para esse estudo foi o de correlação angular gama-gama perturbada (CAP) utilizando o núcleo de prova 181Hf(181Ta). Além disso, o estudo também foi estendido para o háfnio (Hf) na estrutura de ortosilicatos (HfSiO4) dopado com 20% Fe e na forma de filmes finos de HfO2. As amostras foram produzidas pelo método sol gel e para os filmes finos foi utilizado a técnica d

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9

Kang, Laeugu. "Study of HFO₂ as a future gate dielectric and implementation of polysilicon electrodes for HFO₂ films /." Full text (PDF) from UMI/Dissertation Abstracts International, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p3004301.

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10

Nguyen, Thinh H. "Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM." University of Cincinnati / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1535702700125043.

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11

Ghobar, Oussama. "Etude des défauts de l'interface Si/SiO2 des transistors MOS conventionnels et de ceux de la couche interfaciale des transistors MOS avec HfO2 comme diélectrique de grille." Grenoble INPG, 2008. http://www.theses.fr/2008INPG0048.

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Ce mémoire porte sur la caractérisation des défauts dans les isolants de transistors MOS, soit conventionnels, c'est à dire avec Si02 seul, soit avec Hf O2 comme oxyde de grille, en utilisant la technique de pompage de charges. Concernant les dispositifs avec Si02, il s'est agi de caractériser les défauts de l'interface Si/Si02 dans les transistors complètement « processés », défauts dont la nature était inconnue jusqu'à récemment, et plus précisément de vérifier un modèle dans lequel ces défauts sont des états donneurs et accepteurs, en fait ceux de centres PbO. Pour les transistors avec Hf O

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12

Cabout, Thomas. "Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation." Thesis, Aix-Marseille, 2014. http://www.theses.fr/2014AIXM4778/document.

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Aujourd'hui, le marché des mémoires non-volatile est dominé par la technologie Flash. Cependant, cette technologie est en passe d'atteindre ses limites de miniaturisation. Ainsi, dans le but de poursuivre la réduction des dimensions, de nouveaux concepts mémoires sont explorés. Parmi les technologies émergentes, la mémoire résistive OxRRAM basée sur la commutation de résistance d’une structure Métal/Isolant/Métal, cette technologie présente des performances prometteuses, supporte une réduction de ses dimensions critiques et offre une bonne compatibilité avec les filières CMOS. Toutefois, cette

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13

Papendorf, Benjamin [Verfasser], Ralf [Akademischer Betreuer] Riedel, and Hans-Joachim [Akademischer Betreuer] Kleebe. "Keramische Nanokomposite auf Basis von SiOC/HfO2 und SiCN/HfO2: Herstellung und Untersuchungen zum Hochtemperaturverhalten / Benjamin Papendorf. Betreuer: Ralf Riedel ; Hans-Joachim Kleebe." Darmstadt : Universitäts- und Landesbibliothek Darmstadt, 2012. http://d-nb.info/1106116070/34.

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14

Jones, Michael N. "Leakage current behavior of reactive RF sputtered HfO2 thin films." [Gainesville, Fla.] : University of Florida, 2003. http://purl.fcla.edu/fcla/etd/UFE0001740.

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15

Iglesias, Santiso Vanessa. "CAFM Nanoscale electrical properties and reliability of HfOz based gate dielectrics in electron devices : Impact of the polycrystallization and resistive switching." Doctoral thesis, Universitat Autònoma de Barcelona, 2012. http://hdl.handle.net/10803/107890.

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La evolución de los dispositivos MOS ha conllevado una reducción de tamaño de los mismos con el fin de mejorar sus prestaciones. Sin embargo, este continuo escalado se ha topado con un límite físico: la delgada capa aislante de SiO2 (entre otros), que fuerza la búsqueda de nuevas alternativas que permitan abastecer al exigente mercado tecnológico. En las dimensiones en las que actualmente se trabaja, del orden de nanómetros, los fenómenos cuánticos adquieren gran importancia siendo, entre otros, las corrientes de fuga uno de los principales escollos con los que se ha de lidiar. Estas corriente

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16

Zhang, Jingli. "Development of microstructures in YBaâ†2Cuâ†3Oâ†7â†-â†x superconductors." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.390242.

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17

Estandía, Rodríguez Saúl. "Nanoscale Study of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films and BaTiO3/SrTiO3 Superlattices." Doctoral thesis, Universitat Autònoma de Barcelona, 2021. http://hdl.handle.net/10803/673208.

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La ferroelectricitat es una propiedat functional que trova aplicacions en dispositius microelectronics com les memories no volatils. En aquesta tesi se han estudit les propiedats ferroelectriques de capes primes nanométriques y supexarxes combinant técniques de caracterizació macroscópiques y nanoscópiques. En primer lloc, se ha estudiat la configuració de dominis ferroelectrics de BaTiO3 en supexarxes de diferents periods (gruix de les capes) utilitzant microscopia electronica en transmissió (STEM). Se ha observat una fort dependencia amb el periodi, con una distorsió polar decreixent per a p

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18

Zou, Shubing. "Deposition and characterization of HfO₂ thin films." Thesis, This resource online, 1994. http://scholar.lib.vt.edu/theses/available/etd-07112009-040501/.

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19

Cassens, Beatriz Nascimento. "Modelagem do processo de formação de poliuretano rígido com hidrofluorolefinas como agente expansor." Universidade de São Paulo, 2018. http://www.teses.usp.br/teses/disponiveis/3/3137/tde-16072018-112953/.

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Os poliuretanos provavelmente são os mais versáteis dentre os polímeros de maior uso industrial por ser possível serem produzidos em uma ampla faixa de densidade, dureza, propriedades mecânicas e por meio de diferentes processos de conversão. Sua síntese envolve uma grande variedade de matérias-primas e proporções entre elas. Um modelo matemático que descreve o processo de formação do poliuretano é bastante útil no desenvolvimento de formulações e definição das condições de processamento, evitando grande consumo de tempo e erros no desenvolvimento e em experimentos. Neste trabalho foi proposta

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20

Muñoz, Gorriz Jordi. "Degradación y conducción multifilamentaria en estructuras MIS/MIM basadas en HfO2." Doctoral thesis, Universitat Autònoma de Barcelona, 2021. http://hdl.handle.net/10803/671616.

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En aquesta tesi doctoral es realitza una extensa investigació sobre el fenomen de la ruptura dielèctrica en dispositius metall-aïllant-semiconductor (MIS) i metall-aïllant-metall (MIM) basats en HfO2. Més específicament, s’han estudiat dispositius MIS/MIM amb HfO2 com a dielèctric i dispositius MIS dielèctric dels quals es un penta-nanolaminat composat per capes interposades de HfO2 i de Al2O3. Al llarg dels quatre extensos capítols que formen aquesta tesi, més un últim capítol conclusiu, s’ha realitzat un exhaustiu estudi de la ruptura dielèctrica des de punts de vista completament diferents.

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21

Barnett, Deborah Amanda. "Characterisation and attempted cloning of the hfaB gene of Aspergillus nidulans." Thesis, Bangor University, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.321454.

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22

Ukirde, Vaishali. "Evaluation of hydrogen trapping in HfO2 high-κ dielectric thin films". Thesis, University of North Texas, 2006. https://digital.library.unt.edu/ark:/67531/metadc5596/.

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Hafnium based high-κ dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in complementary metal oxide semiconductor (CMOS) devices. Hydrogen is one of the most significant elements in semiconductor technology because of its pervasiveness in various deposition and optimization processes of electronic structures. Therefore, it is important to understand the properties and behavior of hydrogen in semiconductors with the final aim of controlling and using hydrogen to improve electronic performance of electronic structures. Trap transformations under annea

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23

Long, Branden Michael. "Fabrication and Characterization of HfO2 Based Resistive Random Access Memory Devices." University of Toledo / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1365166054.

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24

Mandal, Saptarshi. "Study of Mn doped HfO2 based Synaptic Devices for Neuromorphic Applications." University of Toledo / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1384535471.

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25

Zurauskaite, Laura. "Fabrication and electrical characterization of Ge/GeOx/Al2O3/HfO2 MOS capacitors." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-204909.

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Continuous scaling of complementary metal oxide semiconductor (CMOS) devices has led to constant increase in device performance. However, as scaling becomes more difficult with every technological node, alternative channel materials that could replace silicon (Si) are being investigated [1]. Germanium (Ge) is an attractive material because of its four times higher hole mobility and twice higher electron mobility compared to silicon [2]. Nevertheless, Ge suffers from surface passivation issues that need further investigation. A modification of oxidation through a barrier layer method proposed b

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26

Lieberei, Swenja Katharina [Verfasser]. "Auswirkung von Pflanzenauszügen auf Estrogenrezeptoren in U-2-OS-ERα [U-2-OS-ER-alpha] und ERβ [ER-beta-] sowie {hFOB-ERα-Zellen [hFOB/ER-alpha-Zellen] unter besonderer Berücksichtigung der Extrakte aus Morinda citrifolia (Noni) / vorgelegt von Swenja Katharina Lieberei". 2007. http://d-nb.info/986597783/34.

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27

Faltin, Manuela. "Proliferation und Differenzierung der Zellkultursysteme hFOB 1.19 und C3H10T1/2 - BMP-2 unter dem Einfluss von nichtsteroidaler Antiphlogistika und einzeitiger Radiatio." Doctoral thesis, 2004. https://nbn-resolving.org/urn:nbn:de:bvb:20-opus-7854.

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Die Auswahl der Zellkulturmodelle hFOB 1.19 und C3H10T1/2 – BMP-2 erfolgte basierend auf den Hypothesen zur Entstehung heterotoper Ossifikationen. So kann die humane fetale Osteoblastenzell-Linie hFOB 1.19 in diesem Zusammenhang als determined osteoblastic progenitor cell und die murine mesenchymale Zell-Linie C3H10T1/2–BMP-2 als inducable osteoblastic progenitor cell angesehen werden. Die Zell-Linie hFOB 1.19 bietet aufgrund ihres humanen Ursprungs und der reproduzierbaren Expression osteogener Marker wie Alkalische Phosphatase, Prokollagen I und Osteocalcin die Möglichkeit, den humanen in vi

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28

Faltin, Manuela [Verfasser]. "Proliferation und Differenzierung der Zellkultursysteme hFOB 1.19 und C3H10T1/2 - BMP-2 unter dem Einfluß nichtsteroidaler Antiphlogistika und einzeitiger Radiatio / vorgelegt von Manuela Faltin." 2004. http://d-nb.info/970190336/34.

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29

Fu, Wei-Huan, and 傅暐洹. "Charge-Trapping Characteristics of Non-volatile Memory Using HfON Trapping Layer and HfO2/SiO2 Barriers." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/05290221402959471894.

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碩士<br>國立交通大學<br>光電系統研究所<br>101<br>With the developments of consumer and portable electronic devices, such as cellular phones, cameras memory cards, the nonvolatile memory (NVM) market grows rapidly recently. The NVM devices with high density, fast program/erase speed, good endurance and data retention have been attracted much attention. Have beenHowever, with flash memory entering 20nm technology node, the conventional poly-silicon floating gate (FG) flash memory faces serious challenges from stress-induced leakage current (SILC) -induced charge loss and cell-to-cell coupling. When the thickne

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30

Wnag, Kai-Te, and 王凱德. "The electrical mechanisms of the dielectrics prepared by the anodization to fabricate HfO2 and HfON at room temperature." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/02211725871506093913.

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碩士<br>國立雲林科技大學<br>電子與資訊工程研究所<br>93<br>This experiment is planned to utilize sputtering method to deposit ultrathin metal Hf or HfN in silicon basis, then, utilize anodization to make metal layer change into hafnium oxide (HfO2) and hafnium oxynitride (HfON) at room temperature. Whether the parameter controlled have two: one for oxidize time it is 10min, 12min, 16min and 18min respectively; Another for oxidize electric field 5V/cm, 10V/cm, 20V/cm and 30V/cm, is it make condition to lie between electricity layers of influence of quality initial stage to compare. Experiment result of study show

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Sung, Shun-Ping, and 宋順平. "Degradation and Recovery of HfO2/ZrO2/HfO2 Dielectric Layer." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/673h47.

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碩士<br>國立臺北科技大學<br>機電整合研究所<br>105<br>Dielectric breakdown for device lifetime is an important mechanism. Beyond the sub-45 nm technology node, the high-k (HK) dielectric materials have been thoroughly investigated to replace the conventional SiO2 and the dielectric breakdown mechanics will be changed. The experimental samples, nMOSFETs were fabricated by UMC with 28nm node high performance logic technology. The hafnium-based gate dielectric with a profile of HfOx/ZrOy/HfOz (HZH) was deposited by atomic layer deposition (ALD) technology. We investigated different breakdown regimes of devices,

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32

XIA, YU-HONG, and 夏愈閎. "Study of HfO2 Crystal Phase and TiO2/HfO2 Stacked Structures for High Dielectric." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/base34.

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碩士<br>國立雲林科技大學<br>電子工程系<br>106<br>In this study, the structure of TiN/Ti/HfO2/TiO2/HfO2/Si was studied by using a titanium dioxide and hafnium oxide film gate stack to investigate the electrical properties of the structure. In this experiment, three layers of high dielectric materials were deposited on a p-type silicon substrate [1~5 Ω-cm (100)] using RF magnetron sputtering system. The HfO2 and TiO2 films were deposited as dielectric layers. The thickness of hafnium dioxide was compared with the thickness of titanium dioxide film. After that, a Ti-capping layer and titanium nitride gate elect

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33

Liu, Ken-Da, and 劉懇達. "Optical characterizations of HfO2 nanostructures." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/80398163198462558136.

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碩士<br>國立東華大學<br>物理學系<br>103<br>Using the Hot-filament metal oxide vapor deposition method, we successfully synthesized hafnium oxide nanostructures. The field emission scanning electron microscope (FESEM) showed that the hafnium oxide nanostructures size and thickness. Element analysis from energy dispersive spectrometry (EDS) revealed that consist of only the element Hf and O Chemical quantitative analysis from x-ray photoelectron spectrometry (XPS) confirm that the compound is HfO2. The x-ray diffractometer (XRD) indicated that the nanostructure were composed of HfO2, and the structure is mo

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34

Papendorf, Benjamin. "Keramische Nanokomposite auf Basis von SiOC/HfO2 und SiCN/HfO2: Herstellung und Untersuchungen zum Hochtemperaturverhalten." Phd thesis, 2012. http://tuprints.ulb.tu-darmstadt.de/3013/1/DISSERTATION_PAPENDORF_FINAL.pdf.

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Im Rahmen dieser Arbeit wird die Synthese keramischer SiOC- und SiCN-Nanokomposite mit homogen dispergiertem Hafniumdioxid über die Polymerpyrolyse beschrieben. Die Untersuchung der Polymer-Keramik-Umwandlung als auch die Charakterisierung der keramischen Nanokomposite ist ebenso ein Schwerpunkt dieser Arbeit. Der erste Abschnitt dieser Arbeit handelt von dem Reaktionsmechanismus von Hafniumalkoxiden mit (Poly-)silazanen. Die Reaktivität der Hf-Spezies gegenüber dem Si-Precursor hat einen entscheidenden Einfluss auf die Mikrostrukturentwicklung der Keramik. Durch die Bildung von Si-O

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Chen, Yao-Hsiang, and 陳耀祥. "Effects of Different Locations of La2O3 in HfO2/La2O3/HfO2 Stacks on Electrical and Material Properties." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/71490257072647741366.

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Chang, Hsiu-Wei, and 張修維. "Investigation on PVD Deposited HfO2 Film." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/81214965641477270029.

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碩士<br>國立交通大學<br>電子工程系<br>90<br>ABSTRACT In this thesis, technique of high dielectric constant films, HfO2, deposited by physical vapor deposition method was studied. The effect of gate electrode, deposition method, post-deposition annealing, and pr-deposition surface treatment are examined extensively. The dielectric constant of PVD HfO2 was determined to be 27.9 from the metal-insulator-metal capacitor. Then, Metal-Insulator-Semiconductor (MIS) capacitor was fabricated to investigate the effective dielectric constant. A relatively low effective dielectric constant was fo

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Lee, Heng-Yuan, and 李亨元. "Study of HfO2 Based Resistive Memory." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/53056070826137167881.

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博士<br>國立清華大學<br>電子工程研究所<br>98<br>The purpose of this thesis is to develop a reliable HfO2 based resistive memory for the next generation nonvolatile memory application. In order to find the process factor to determine the resistance switch, the effect of electrode metal and anneal process on the HfO2 based metal-insulator-metal capacitor are studied. The result suggests the free energy of oxidation reaction for an electrode metal not only affect the interaction between oxide and electrode, but also is critical to the operation mode of memory device. The electrode metal of less negative free en

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Wu, Woei-Cherng, and 吳偉成. "Characteristics of Fluorine Incorporated HfO2 Gate Dielectrics." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/51147987249832671906.

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碩士<br>長庚大學<br>電子工程研究所<br>92<br>According to the technology roadmap, the standard CMOS gate oxide material which has served the industry so long with high performance and good reliability will be changed when the process technology continue to scale down. Copper will replace Al-alloy, low-k dielectric will replace SiO2-base IMDS and high-k gate dielectric will replace SiO2 gate-oxide. However, many high-k dielectrics (e.g. TiO2, Ta2O5, BST….) are thermally unstable when it is directly contacted with Si and need an additional barrier layer to prevent from reaction. From above discussi

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Lin, Kuan-Liang, and 林冠良. "Study on Nonvolatile HfO2 Resistive Switching Memory." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/23611484161391015072.

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博士<br>國立交通大學<br>電子研究所<br>101<br>As the PC-driven memory market gradually shifted to a consumer device-driven market, battery-powered portable electronics, such as mobile phones, digital cameras, and tablet devices, have significantly increased the demand for nonvolatile memory (NVM) from the late 1990s. NVM technology has been extensively developed to achieve high density and speed, low power consumption, and affordable data storage. Next-generation NVM has even better specifications and is of significant technological importance. Studies have examined several next-generation NVMs to overcome

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40

Hong-dyi, Chang, and 張宏迪. "Characteristics of ultra-thin HfO2 gate insultor." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/06182608227109381867.

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碩士<br>國立交通大學<br>電子工程系所<br>93<br>When the MOSFET gate insulator is scaled below 1.5 nm, some serious problems such as direct electric tunneling will occur. Therefore, high dielectric constant material is very desirable to replace SiO2. Hafnium oxide is a most promising material for future MOSFET gate oxide applications. In this study, we used Al-HfO2-Si MIS capacitor as our analysis device. First, we used DC sputter system to deposit 20 Å hafnium metal on p-type and n-type silicon substrate. Then we proceeded with furnace under 200℃, 300℃, 400℃ and 500℃ oxidation temperature and 15 or 30 minute

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Chun-MuHsueh and 薛春木. "HfO2-x film and its application inHfO2-x/W/HfO2-x/W multilayer solar selective absorber at high temperature." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/4659jn.

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碩士<br>國立成功大學<br>材料科學及工程學系<br>105<br>The goal of this research is to develop a new design of solar selective absorber—alternately stacked HfO2-x/W/HfO2-x/W multilayer coatings on stainless steel substrates for ultrahigh temperature (600~1000°C) applications using a reactive radio frequency (RF) magnetron sputtering deposition system. Before fabricating the multilayer coatings, the microstructure and optical properties of before and after different temperatures annealing individual HfO2-x coatings on Si substrates which were deposited by Hf and HfO2 targets at varied O2/Ar gas flow ratios (r),

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Chin-Han, Pan. "High- MOSCAP and MOSFET with MBE-grown HfO2." 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0016-1303200709272845.

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Pan, Chin-Han, and 潘欽寒. "High- MOSCAP and MOSFET with MBE-grown HfO2." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/67257435437889328965.

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碩士<br>國立清華大學<br>電子工程研究所<br>94<br>In this MS thesis, we employed the molecular beam epitaxy (MBE) method to deposit amorphous HfO2 dielectrics (k = 15) on silicon. We have demonstrated for the first time an atomically abrupt HfO2/Si interface free of SiO2 or silicate formation. In addition, TiN metal gate was deposited by reactive sputtering from a pure Ti target in Ar/N2 plasma. A two-steps annealing studies were carried out to improve the electrical performance of high-k gate dielectric MOS capacitors. The interface trap density (Dit) were calculated by Terman method to be 1E12 eV-1cm-2. Furt

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Kao, Kung-Kai, and 高公鍇. "The Study on HfO2 Resistive Random Access Memory." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/67173071485578905086.

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碩士<br>國立清華大學<br>電子工程研究所<br>98<br>In recent year, non-volatile memory has become more and more important in our life. However, as the CMOS scaling goes on, we need faster, smaller, and less power consume’s memory to use in portable merchandises. Under this condition, resistive switching random access memory (RRAM) has strong potential among next generation non-volatile memory candidates. Hence, our study will focus on RRAM and its applications.Among so many RRAM materials, we decide using HfO2 to be our dielectric layer and Ti as top electrode TiN as bottom electrode. It is because HfO2 has bee

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Lin, Jun-Hung, and 林俊宏. "Resistive switching of HfO2 layer with different electrodes." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/64180607900884998688.

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碩士<br>國立中央大學<br>化學工程與材料工程研究所<br>98<br>The resistance switching random access memory (RRAM) has the advantages of high density, low cost, low energy operation, fast operating speed, good retention, and simple structure. In general, RRAM is characterized with a metal-insulator-metal (MIM) structure. Here we develop a metal-insulator-semiconductor (MIS) structure, which is more compatible with silicon process than MIM structure. MOCVD is used to deposit different thickness of the insulator layer HfO2. With different electrodes (TiN/Ti, Ni) on the HfO2, we observed different resistance switching c

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46

Huang, Jing-wei, and 黃景濰. "Comparison of RTA and thermal processed HfO2 films." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/37478227897023943866.

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碩士<br>大同大學<br>電機工程學系(所)<br>104<br>Miniature size of the problem , for the production of the capacitor gate oxide layer of silica (<3 nm) , which amounts to carriers tunneling restrictions , this laboratory developed with High-K materials hafnium oxide replacing traditional gate insulating layer , pre- growing 10 nm of amorphous silicon by PECVD, and then to RF magnetron sputtering system hafnium oxide growth mode and uses a rapid thermal annealing furnace tubes and two kinds of heat treatment , to further explore two ways to influence hafnium oxide film by FTIR and XPS confirm all the way back

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47

Lin, Yi-De, and 林義德. "First-Principle Investigation on Phonon Propertie of HfO2." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/00126477460510882667.

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碩士<br>國立高雄應用科技大學<br>電子工程系<br>97<br>Recently, nanoscale MOSFET (metal-oxide semiconductor field-effect transistor) has been widely studied by using high-K material, such as HfO2, due to its advantages of high dielectric and high energy gap. The phonon dispersions are important in device applications, especially, the interface phonon scatterings dominate the carrier mobility. In this work, the author applies the first principle method to calculate the force constants in HfO2 layer in the gate structure of MOSFET. The symmetry of the crystal is applied to reduce the phonon-mode calculations. Th

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48

Tzeng, Bo-Shian, and 曾柏憲. "The research of scaling down in HfO2 RRAM." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/37227324143261981509.

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碩士<br>國立中央大學<br>化學工程與材料工程研究所<br>100<br>Resistance Random Access Memory (RRAM) is the most simplified structure of memory, and it can be easily scaled down. RRAM has many advantages such as non-volatile property, high speed operation, low power consumption, low cost, and high data density. RRAM is the best candidate for high density device in the next generation. In this study, we used Ni/HfO2/Si as contact hole and crossbar structure, and used different electrode sizes to scale down. But it showed “forming fail” and “reset fail” in tiny scale. Nevertheless, using thicker TMO can reduce Vformin

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Chiang, Yi-tsung, and 江易璁. "Fabrication and analysis of the mixed-structure HfO2." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/99664051953129965339.

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碩士<br>大同大學<br>光電工程研究所<br>101<br>With high development of technology, it is more important for scaling down of devices. But, scaling down of the device causes the problems of leakage current and low turn-on current. To improve the questions, we use the high dielectric material to alternate the SiO2 of MOS. In this paper, we try to develop the HfO2 thin films by using the radio frequency magnetron sputtering in the room-temperature or the raising-temperature. As-deposited thin films is measured by several of instruments, such as the thickness by the optical(Ellipsometer)、physical(a-step)and im

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50

Meng-HsuanWu and 吳孟軒. "Resistive Switching Behavior of HfO2 Nonvolatile Memory Device." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/2ne9bf.

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