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1

Astolfi, Daniele, Lorenzo Marconi, Laurent Praly, and Andrew R. Teel. "Low-power peaking-free high-gain observers." Automatica 98 (December 2018): 169–79. http://dx.doi.org/10.1016/j.automatica.2018.09.009.

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2

Jain, Archita, and Anshu Gupta. "Low Power and High Gain Operational Transconductance Amplifier." International Journal of Computer Applications 144, no. 5 (2016): 30–33. http://dx.doi.org/10.5120/ijca2016910278.

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3

Durgam, Rajesh, S. Tamil, and Nikhil Raj. "Design of Low Voltage Low Power High Gain Operational Transconductance Amplifier." U.Porto Journal of Engineering 7, no. 4 (2021): 103–10. http://dx.doi.org/10.24840/2183-6493_007.004_0008.

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Анотація:
In this paper, a high gain structure of operational transconductance amplifier is presented. For low voltage operation with improved frequency response bulk driven quasi-floating gate MOSFET is used at the input. Further for achieving high gain the modified self cascode structure is used at the output. Compared to conventional self cascode the modified self cascode structure used provides higher transconductance which helps in significant boosting of gain of the amplifier. The modification is achieved by employing quasi-floating gate transistor which helps in scaling of the threshold which as
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4

Wei, Binbin, and Jinguang Jiang. "A low power high gain gain-controlled LNA + mixer for GNSS receivers." Journal of Semiconductors 34, no. 11 (2013): 115002. http://dx.doi.org/10.1088/1674-4926/34/11/115002.

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5

Kim, Shin-Gon, Habib Rastegar, Min Yoon, et al. "High-Gain and Low-Power Power Amplifier for 24-GHz Automotive Radars." International Journal of Smart Home 9, no. 2 (2015): 27–34. http://dx.doi.org/10.14257/ijsh.2015.9.2.03.

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6

Qiurong He and Milton Feng. "Low-power, high-gain, and high-linearity SiGe BiCMOS wide-band low-noise amplifier." IEEE Journal of Solid-State Circuits 39, no. 6 (2004): 956–59. http://dx.doi.org/10.1109/jssc.2004.827801.

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7

Farzamiyan, Amir Hossein, and Ahmad Hakimi. "Low-power CMOS distributed amplifier using new cascade gain cell for high and low gain modes." Analog Integrated Circuits and Signal Processing 74, no. 2 (2012): 453–60. http://dx.doi.org/10.1007/s10470-012-9990-9.

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8

Huang, Shou-Chien, Cheng-Hsiu Tsai, and Yue-Ming Hsin. "Low power consumption and high gain ultra-wide-band low noise amplifier." Microwave and Optical Technology Letters 51, no. 2 (2008): 382–84. http://dx.doi.org/10.1002/mop.24047.

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9

Cui, Lin Hai, Rui Xu, Zhan Peng Jiang, and Chang Chun Dong. "Design of a Low-Voltage Low-Power CMOS Operational Amplifier." Applied Mechanics and Materials 380-384 (August 2013): 3283–86. http://dx.doi.org/10.4028/www.scientific.net/amm.380-384.3283.

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Анотація:
A low voltage, low power two-stage operational amplifier (op-amp) was proposed in this paper. A folded-cascode structure is used in the input stage of the amplifier to get high gain. Current mirrors are used in the input stage to make the transconduotance constant. A simple push-pull common source amplifier is adopted as the output stage to take the advantages of its high efficiency. The experimental results show that the unity-gain bandwidth is 12.5MHz, the low-frequency open-loop voltage gain is 100dB,the phase margin is 65°, and power dissipation is 98.8μw.
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10

Karimi, Gholamreza, Saeed Gholami, and Saeed Roshani. "A linear high-gain and low-power CMOS UWB mixer." International Journal of Electronics Letters 1, no. 4 (2013): 159–67. http://dx.doi.org/10.1080/21681724.2013.829997.

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11

Toofan, S., A. R. Rahmati, A. Abrishamifar, and G. Roientan Lahiji. "A low-power and high-gain fully integrated CMOS LNA." Microelectronics Journal 38, no. 12 (2007): 1150–55. http://dx.doi.org/10.1016/j.mejo.2007.10.001.

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12

Seo, Jeong-Bae, Jong-Ha Kim, Hyuk Sun, and Tae-Yeoul Yun. "A Low-Power and High-Gain Mixer for UWB Systems." IEEE Microwave and Wireless Components Letters 18, no. 12 (2008): 803–5. http://dx.doi.org/10.1109/lmwc.2008.2007707.

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13

Iji, Ayobami, Xi Zhu, and Michael Heimlich. "High gain/power quotient variable-gain wideband low-noise amplifier for capsule endoscopy application." Microwave and Optical Technology Letters 54, no. 11 (2012): 2563–65. http://dx.doi.org/10.1002/mop.27111.

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14

Cen, Mingcan, and Shuxiang Song. "A High Gain, Low-Power Low-Noise Amplifier for Ultra-Wideband Wireless Systems." Circuits, Systems, and Signal Processing 33, no. 10 (2014): 3251–62. http://dx.doi.org/10.1007/s00034-014-9801-x.

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15

Chang, J. F., and Y. S. Lin. "Low-power, high-gain and low-noise CMOS distributed amplifier for UWB systems." Electronics Letters 45, no. 12 (2009): 634. http://dx.doi.org/10.1049/el.2009.0354.

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16

Iji, Ayobami, Xie Zhu, and Michael Heimlich. "Low power, high gain, low noise amplifier (LNA) for ultra wide-band applications." Microwave and Optical Technology Letters 55, no. 6 (2013): 1399–401. http://dx.doi.org/10.1002/mop.27588.

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17

Cao, Menghua, and Weixun Tang. "The High-Speed Low-Power Dynamic Comparator." Journal of Physics: Conference Series 2113, no. 1 (2021): 012064. http://dx.doi.org/10.1088/1742-6596/2113/1/012064.

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Анотація:
Abstract This paper comments on four works for the optimization of comparator design. Today, with the development of integrated circuits, the requirements for comparators about low power, low delay, few offset voltage, and low noise are highly desirable. Specifically, these works made progress in the conventional comparator, which comprises a preamplifier and a latch. They also solved some problems, such as decreasing power and delay. Some works employ a positive feedback cross-coupled pares to provide a larger gain in the preamplifier, use PMOS switch transistors to accelerate the definition
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18

Al-Anbagi, Haidar, Abdulghafor Abdulhameed, Ahmed Jasim, Maryam Jahanbakhshi, and Abdulhameed Al Obaid. "Power Efficient LNA for Satellite Communications." Iraqi Journal for Electrical and Electronic Engineering 19, no. 2 (2023): 110–17. http://dx.doi.org/10.37917/ijeee.19.2.13.

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Анотація:
This article presents a power-efficient low noise amplifier (LNA) with high gain and low noise figure (NF) dedicated to satellite communications at a frequency of 435 MHz. LNAs’ gain and NF play a significant role in the designs for satellite ground terminals seeking high amplification and maintaining a high signal-to-noise ratio (SNR). The proposed design utilized the transistor (BFP840ESD) to achieve a low NF of 0.459 dB and a high-power gain of 26.149 dB. The study carries out the LNA design procedure, from biasing the transistor, testing its stability at the operation frequency, and finall
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19

Salah Toubet, Moustapha, Mohamad Hajj, Regis Chantalat, et al. "Wide Bandwidth, High-Gain, and Low-Profile EBG Prototype for High Power Applications." IEEE Antennas and Wireless Propagation Letters 10 (2011): 1362–65. http://dx.doi.org/10.1109/lawp.2011.2177953.

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20

Singh, Priya, Vandana Niranjan, and Ashwni Kumar. "Design and Simulation of Low Power Differential Transimpedance Amplifier Using Degenerations Capacitors." Journal of Nanoelectronics and Optoelectronics 17, no. 10 (2022): 1370–78. http://dx.doi.org/10.1166/jno.2022.3306.

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Анотація:
In today’s internet-connected culture, high-speed data transmission techniques are in high demand. Optical communication is most used techniques for data transmission with speed. High-speed amplifiers are needed, nevertheless, to obtain high gains and transform current signals into voltage gains. This is accomplished via transimpedance amplifiers, a crucial component of optical receivers. In this work, a high-speed transimpedance amplifier with negative degeneration capacitors and complete differential operation is built. The proposed design has a transimpedance gain of approximately 52.4 dB a
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21

Jin, Ho Jeong, on Sik Cho, and Young-Jin Kim. "Zigbee Transmitter using a Low-power High-gain Up-conversion Mixer." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 17, no. 5 (2017): 660–65. http://dx.doi.org/10.5573/jsts.2017.17.5.660.

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22

Baik, Seyoung, Changwon Seo, Ho Jeong Jin, and Choon Sik Cho. "Zigbee Transmitter Using a Low-Power High-Gain Up-Conversion Mixer." Journal of Korean Institute of Electromagnetic Engineering and Science 27, no. 9 (2016): 825–33. http://dx.doi.org/10.5515/kjkiees.2016.27.9.825.

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23

Sporea, Radu A., Michael J. Trainor, Nigel D. Young, John M. Shannon, and S. Ravi P. Silva. "Field Plate Optimization in Low-Power High-Gain Source-Gated Transistors." IEEE Transactions on Electron Devices 59, no. 8 (2012): 2180–86. http://dx.doi.org/10.1109/ted.2012.2198823.

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24

Kasthuri Bha, J. K., and P. Aruna Priya. "Low power & high gain differential amplifier using 16 nm FinFET." Microprocessors and Microsystems 71 (November 2019): 102873. http://dx.doi.org/10.1016/j.micpro.2019.102873.

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25

Zhang, Wanyang, David J. Comer, and Shiuh-hua Wood Chiang. "Design of low-power ultra-high voltage gain differential cascode stages." International Journal of Electronics 104, no. 6 (2017): 982–92. http://dx.doi.org/10.1080/00207217.2017.1279229.

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26

Li, Cai, Fu Zhongqian та Huang Lu. "A low power high gain UWB LNA in 0.18-μm CMOS". Journal of Semiconductors 30, № 11 (2009): 115004. http://dx.doi.org/10.1088/1674-4926/30/11/115004.

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27

Machiels, Brecht, Patrick Reynaert, and Michiel S. J. Steyaert. "The tapered matrix amplifier: a low-power high-gain broadband amplifier." Analog Integrated Circuits and Signal Processing 73, no. 3 (2012): 961–72. http://dx.doi.org/10.1007/s10470-012-9838-3.

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28

Ghaemnia, Afifeh, and Omid Hashemipour. "An ultra-low power high gain CMOS OTA for biomedical applications." Analog Integrated Circuits and Signal Processing 99, no. 3 (2019): 529–37. http://dx.doi.org/10.1007/s10470-019-01438-6.

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29

Jin, Ho Jeong, Yeong Seok Choi, Choon Sik Cho, and Young-Jin Kim. "Zigbee transmitter using a low-power high-gain up-conversion mixer." Microwave and Optical Technology Letters 60, no. 1 (2017): 277–80. http://dx.doi.org/10.1002/mop.30946.

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30

Bai, Na, Xiaolong Li, and Yaohua Xu. "A Low-Voltage, Ultra-Low-Power, High-Gain Operational Amplifier Design for Portable Wearable Devices." Electronics 11, no. 1 (2021): 74. http://dx.doi.org/10.3390/electronics11010074.

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Анотація:
Based on the SMIC 0.13 um CMOS technology, this paper uses a 0.8 V supply voltage to design a low-voltage, ultra-low-power, high-gain, two-stage, fully differential operational amplifier. Through the simulation analysis, when the supply voltage is 0.8 V, the design circuit meets the ultra-low power consumption and also has the characteristic of high gain. The five-tube, fully differential, and common-source amplifier circuits provide the operational amplifier with high gain and large swing. Unlike the traditional common-mode feedback, this paper uses the output of the common-mode feedback as t
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31

P, Bhavana. "Maximum Power Extraction in Low Power PV FED High Voltage Gain Boost Converter using Optimization Algorithm (PO & INC) by Limiting the Oscillations." Revista Gestão Inovação e Tecnologias 11, no. 4 (2021): 1163–76. http://dx.doi.org/10.47059/revistageintec.v11i4.2176.

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32

VASUDEVA, G., and B. V. UMA. "Low Voltage Low Power And High Speed OPAMP Design using High-K FinFET Device." WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS 20 (June 28, 2021): 80–87. http://dx.doi.org/10.37394/23201.2021.20.11.

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Анотація:
In this paper, operational amplifier circuit is designed using model parameters of high-k FinFET in 22nm technology. The conventional design expressions for MOSFET based OPAMP design are fine tuned to design FinFET based OPAMP. The OPAMP design is suitable for use as sub circuit in ADC design as it supports low voltage, high speed and low power dissipation. The transistor geometries are identified so as to achieve high performance and energy efficient OPAMP. Schematic capture is carried out using Cadence tool. From the simulation studies, the designed OPAMP has a unity gain bandwidth of 100 GH
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33

Sahu, Rashmi, Maitraiyee Konar, and Sudip Kundu. "Improvement of Gain Accuracy and CMRR of Low Power Instrumentation Amplifier Using High Gain Operational Amplifiers." Micro and Nanosystems 12, no. 3 (2020): 168–74. http://dx.doi.org/10.2174/1876402912666200123153318.

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Background: Sensing of biomedical signals is crucial for monitoring of various health conditions. These signals have a very low amplitude (in μV) and a small frequency range (<500 Hz). In the presence of various common-mode interferences, biomedical signals are difficult to detect. Instrumentation amplifiers (INAs) are usually preferred to detect these signals due to their high commonmode rejection ratio (CMRR). Gain accuracy and CMRR are two important parameters associated with any INA. This article, therefore, focuses on the improvement of the gain accuracy and CMRR of a low power INA top
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34

Huang, Chun-Chieh, Hsin-Chih Kuo, Tzuen-Hsi Huang, and Huey-Ru Chuang. "Low-Power, High-Gain V-Band CMOS Low Noise Amplifier for Microwave Radiometer Applications." IEEE Microwave and Wireless Components Letters 21, no. 2 (2011): 104–6. http://dx.doi.org/10.1109/lmwc.2010.2091401.

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35

Mousavi, S., and M. Guay. "Noise Sensitivity Reduction in Low-power Multi High Gain Observers Using Low-pass Filters." IFAC-PapersOnLine 56, no. 1 (2023): 79–84. http://dx.doi.org/10.1016/j.ifacol.2023.02.014.

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36

Shahraki, Hamed, Ahmad Hakimi, Kambiz Afrooz, and Mohammad Mahdi Pezhman. "High gain dual-band distributed amplifier using new composite right/left-handed transmission line." International Journal of Microwave and Wireless Technologies 10, no. 10 (2018): 1118–27. http://dx.doi.org/10.1017/s1759078718001265.

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AbstractIn this paper, a high-gain dual-band distributed amplifier (DBDA) based on the metamaterial transmission line (TL) is proposed. To have two separate frequency bands in the distributed amplifiers, the composite right/left-handed (CRLH) TLs are used instead of conventional TLs. Although both forward and reverse gains of the distributed amplifiers are available in this case, they suffer from their low gains. In this paper, to increase the DBDA power gain, a new circuit architecture for the CRLH TL is introduced. By using the proposed CRLH TL, a lower wave attenuation coefficient at the fo
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37

Bakkali, Moustapha El, Said Elkhaldi, Intissar Hamzi, Abdelhafid Marroun, and Naima Amar Touhami. "UWB-MMIC Matrix Distributed Low Noise Amplifier." Proceedings 63, no. 1 (2020): 52. http://dx.doi.org/10.3390/proceedings2020063052.

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In this paper, a 3.1–11 GHz ultra-wideband low noise amplifier with low noise figure, high power gain S21, low reverse gain S12, and high linearity using the OMMIC ED02AH process, which employs a 0.18 μm Pseudomorphic High Electron Mobility Transistor is presented. This Low Noise Amplifier (LNA) was designed with the Advanced Design System simulator in distributed matrix architecture. For the low noise amplifier, four stages were used obtaining a good input/output matching. An average power gain S21 of 11.6 dB with a gain ripple of ±0.6 dB and excellent noise figure of 3.55 to 4.25 dB is obtai
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38

Lee, Hyung Seok, Martin Domeij, Carl Mikael Zetterling, and Mikael Östling. "4H-SiC Power BJTs with High Current Gain and Low On-Resistance." Materials Science Forum 556-557 (September 2007): 767–70. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.767.

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4H-SiC BJTs have been fabricated with varying geometrical designs. The maximum value of the current gain was about 30 at IC=85 mA, VCE=14 V and room temperature (RT) for a 20 μm emitter width structure. A collector-emitter voltage drop VCE of 2 V at a forward collector current 55 mA (JC = 128 A/cm2) was obtained and a specific on-resistance of 15.4 m2·cm2 was extracted at RT. Optimum emitter finger widths and base-contact implant distances were derived from measurement. The temperature dependent DC I-V characteristics of the BJTs have been studied resulting in 45 % reduction of the gain and 75
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39

Kim, Youngil, and Sangsun Lee. "Low power high-gain class-AB OTA with dynamic output current scaling." IEICE Electronics Express 10, no. 3 (2013): 20130042. http://dx.doi.org/10.1587/elex.10.20130042.

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40

Yaseen, Md, and Dr P. Usha. "Transformerless high gain boost converter for low power applications with feedback control." TELKOMNIKA Indonesian Journal of Electrical Engineering 16, no. 2 (2015): 244. http://dx.doi.org/10.11591/tijee.v16i2.1609.

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Анотація:
A transformer-less boost converter which provides high voltage gain without utilizing transformer or coupled inductors and extreme duty cycle is proposed in this paper. Also it is able to cancel the ripples in the input current at a preselected duty cycle, without increasing the number of components. The converter combines the features of boost converter and a three switch high voltage converter. At the input side, two inductors are interleaved for cancelling the input current ripple and at the output side switched capacitor voltage multiplier is used to increase the voltage gain. Feedback con
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41

Heo, Minuk, Daehyeon Kwon, and Minjae Lee. "Low‐power programmable high‐gain time difference amplifier with regeneration time control." Electronics Letters 50, no. 16 (2014): 1129–31. http://dx.doi.org/10.1049/el.2014.1782.

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42

Kumar, B. P., G. R. Branner, D. Xu, and A. Ching. "Optimized compact active downconverters having low power consumption and high conversion gain." IEEE Microwave and Wireless Components Letters 12, no. 7 (2002): 270–72. http://dx.doi.org/10.1109/lmwc.2002.800850.

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43

Li, Yichen. "The Performance analysis of Low-Power High-Speed comparators." Highlights in Science, Engineering and Technology 27 (December 27, 2022): 72–82. http://dx.doi.org/10.54097/hset.v27i.3723.

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Анотація:
Comparators are the essential block for planning high-speed analog and. This paper presents three inventive designs of the comparators in recent years. First, innovated by classic two-stage comparator, the comparator with a transconductance-enhanced latching stage is suitable for low-power, high-speed operation. Second, triple-latch feed-forward(TLFF) fully dynamic comparator guarantees the maximum possible gain and speed for a specific power across the entire input range. Finally, the comparator with a dynamic floating inverter maximizes efficiency by reusing the current.
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44

Bouzerara, Lyes, Tahar Belaroussi, and Boualem Amirouche. "Low-voltage, low-power and high gain cmosota using active positive feedback with feed forward and FDCM techniques." Facta universitatis - series: Electronics and Energetics 15, no. 1 (2002): 93–101. http://dx.doi.org/10.2298/fuee0201093b.

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Анотація:
A low voltage, high dc gain and wideband load compensated cas code operational transconductance amplifier (OTA), using an active positive feedback with feed forward technique and frequency-dependent current mirrors (FDCM), is presented and analyzed. Such techniques stand as a powerful method of gain bandwidth and phase margin enhancements. In this paper, a frequency-dependent current mirror, whose input impedance increases with frequency, is used to form the feed forward path at the input of the current mirror with a feed forward capacitor. By using these techniques, the gain bandwidth product
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45

Huang, Zhe Yang, Che Cheng Huang, Jung Mao Lin, and Chung Chih Hung. "High Gain and Low Noise Single Balanced Wireless Receiver Front-End Circuit Design." Applied Mechanics and Materials 284-287 (January 2013): 2647–51. http://dx.doi.org/10.4028/www.scientific.net/amm.284-287.2647.

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This paper presents a wideband wireless receiver front-end for 3.1-5.0GHz band group-1 (BG-1) WiMedia application. The front-end circuits are designed in 0.18um standard CMOS process. The experimental results show the maximum conversion power gain is 45.5dB; minimum noise figure is 2.9dB. Input return loss is lower than -9.3dB and output return loss is lower than -6.8dB. The maximum LO conversion power is 0dBm. 3dB working frequency is 1.9GHz (3.1GHz-5.0GHz) Total power consumption is 24.3mW including LNA, mixer and all buffers. Total chip area is 1.27mm2 including dummy and pads.
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46

Chen, Jun-Da, та Song-Hao Wang. "A Low-Power, High-Gain, and Low-Noise 802.11a Down-Conversion Mixer in 0.35-μm SiGe Bi-CMOS Technology". Journal of Circuits, Systems and Computers 26, № 09 (2017): 1750134. http://dx.doi.org/10.1142/s0218126617501341.

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Анотація:
The paper presents a novel 5.15[Formula: see text]GHz–5.825[Formula: see text]GHz SiGe Bi-CMOS down-conversion mixer for WLAN 802.11a receiver. The architecture used is based on Gilbert cell mixer, the combination of MOS transistors and HBT BJT transistor device characteristics. The hetero-junction bipolar transistor (HBT) topology is adopted at the transconductance stage to improve power gain and reduce noise factor, and the LO series-parallel CMOS switch topology will be applied to reduce supply voltage and dc power at the switching stage. This mixer is implemented in TSMC 0.35-[Formula: see
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47

Zhao, Lv, and Chunhua Wang. "A Low Power High Gain CMOS LNA with Multiple-Feedback Network for Low Voltage UWB Receiver." Journal of Circuits, Systems and Computers 25, no. 06 (2016): 1650051. http://dx.doi.org/10.1142/s0218126616500511.

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In this paper, a high gain low voltage low power Complementary Metal Oxide Semiconductor (CMOS) Low-noise Amplifier (LNA) using Chartered 0.18[Formula: see text][Formula: see text]m CMOS process for Ultra-wideband (UWB) receiver applications is presented. A novel multiple-feedback network constructed by the shunt feedback resistor with a transformer is adopted to realize desirable bandwidth extension and less chip area occupation in the common-source stage. All the cascaded transistors are configured by current-reuse structure and adjusted by forward body bias technique to further reduce suppl
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48

Chen, Yung Chin, Kun Long Zheng, Zong Ye Wu, Tin Fang Zheng, and Chie Nan Lai. "High Pumping Gain Dickson Charge Pump Using Bootstrapped Technique." Applied Mechanics and Materials 145 (December 2011): 557–61. http://dx.doi.org/10.4028/www.scientific.net/amm.145.557.

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Анотація:
This paper proposed a bootstrapped type high-efficient charge pump circuit based on the Dickson charge pump for high output power and pump-efficiency. By using bootstrapped technique, it can increase both of pump-efficiency and power-efficiency. The proposed bootstrapped based charge pump can avoid the threshold voltage drop and enable to generate a higher output voltage. Simulation by using HSPICE level 3 model shows that for conventional Dickson charge pump, it convert the input low DC-voltage (Vin=1.5V) up to 3.8 times of it (VOUT=5.77V), the pump efficiency was 76.93%. Our work, however, c
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49

Sayed, Alhassan, Hesham Hamed та El-Sayed Hasaneen. "Low power, Low Voltage and High Gain UWB Low-Noise Amplifier in the 0.13 μm CMOS technology". International Conference on Electrical Engineering 7, № 7 (2010): 1–11. http://dx.doi.org/10.21608/iceeng.2010.33283.

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50

Ramiah, Harikrishnan, U. Eswaran, and J. Kanesan. "A high gain and high linearity class-AB power amplifier for WCDMA applications." Microelectronics International 31, no. 1 (2013): 1–7. http://dx.doi.org/10.1108/mi-09-2012-0069.

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Анотація:
Purpose – The purpose of this paper is to design and realize a high gain power amplifier (PA) with low output back-off power using the InGaP/GaAs HBT process for WCDMA applications from 1.85 to 1.91 GHz. Design/methodology/approach – A three stages cascaded PA is designed which observes a high power gain. A 100 mA of quiescent current helps the PA to operate efficiently. The final stage device dimension has been selected diligently in order to deliver a high output power. The inter-stage match between the driver and main stage has been designed to provide maximum power transfer. The output mat
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