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Готові списки джерел за темами / Ionization Coefficients / Статті в журналах

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Статті в журналах з теми "Ionization Coefficients"

Автор: Grafiati

Опубліковано: 3 червня 2025

Оновлено: 31 липня 2025

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1

Yuan, Yuan, Jiyuan Zheng, Ann K. Rockwell, Stephen D. March, Seth R. Bank, and Joe C. Campbell. "AlInAsSb Impact Ionization Coefficients." IEEE Photonics Technology Letters 31, no. 4 (2019): 315–18. http://dx.doi.org/10.1109/lpt.2019.2894114.

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2

Luquet, H., M. Pérotin, L. Gouskov, et al. "Ionization coefficients in Ga0.96Al0.04Sb." Journal of Applied Physics 68, no. 8 (1990): 3861–64. http://dx.doi.org/10.1063/1.346272.

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3

Jeng Shiuh Cheong, Majeed M. Hayat, Xinxin Zhou, and John P. R. David. "Relating the Experimental Ionization Coefficients in Semiconductors to the Nonlocal Ionization Coefficients." IEEE Transactions on Electron Devices 62, no. 6 (2015): 1946–52. http://dx.doi.org/10.1109/ted.2015.2422789.

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4

Marić, D., O. Šašić, J. Jovanović, M. Radmilović-Rađenović, and Z. Lj Petrović. "Ionization coefficients in gas mixtures." Radiation Physics and Chemistry 76, no. 3 (2007): 551–55. http://dx.doi.org/10.1016/j.radphyschem.2006.01.022.

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5

Ng, B. K., J. P. R. David, S. A. Plimmer, M. Hopkinson, R. C. Tozer, and G. J. Rees. "Impact ionization coefficients of Al0.8Ga0.2As." Applied Physics Letters 77, no. 26 (2000): 4374–76. http://dx.doi.org/10.1063/1.1336556.

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6

Hatakeyama, Tetsuo, Takatoshi Watanabe, Kazutoshi Kojima, et al. "Impact Ionization Coefficients of 4H-SiC." Materials Science Forum 457-460 (June 2004): 673–76. http://dx.doi.org/10.4028/www.scientific.net/msf.457-460.673.

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7

Lee, J., A. L. Gutierrez‐Aitken, S. H. Li, and P. K. Bhattacharya. "Impact ionization coefficients in Si1−xGex." Applied Physics Letters 66, no. 2 (1995): 204–5. http://dx.doi.org/10.1063/1.113134.

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8

Tabatabaie, N., V. M. Robbins, N. Pan, and G. E. Stillman. "Impact ionization coefficients in (111) InP." Applied Physics Letters 46, no. 2 (1985): 182–84. http://dx.doi.org/10.1063/1.95676.

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9

Loh, W. S., B. K. Ng, J. S. Ng, et al. "Impact Ionization Coefficients in 4H-SiC." IEEE Transactions on Electron Devices 55, no. 8 (2008): 1984–90. http://dx.doi.org/10.1109/ted.2008.926679.

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10

Kim, Sang-Nam. "Ionization and Attachment Coefficients in CF4." Transactions of the Korean Institute of Electrical Engineers 60, no. 1 (2011): 27–31. http://dx.doi.org/10.5370/kieep.2011.60.1.027.

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11

Fu, S. ‐L, T. P. Chin, M. C. Ho, C. W. Tu, and P. M. Asbeck. "Impact ionization coefficients in (100) GaInP." Applied Physics Letters 66, no. 25 (1995): 3507–9. http://dx.doi.org/10.1063/1.113779.

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12

Niwa, Hiroki, Jun Suda, and Tsunenobu Kimoto. "Temperature Dependence of Impact Ionization Coefficients in 4H-SiC." Materials Science Forum 778-780 (February 2014): 461–66. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.461.

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Impact ionization coefficients of 4H-SiC were measured at room temperature and at elevated temperatures up to 200°C. Photomultiplication measurement was done in two complementary photodiodes to measure the multiplication factors of holes (Mp) and electrons (Mn), and ionization coefficients were extracted. Calculated breakdown voltage using the obtained ionization coefficients showed good agreement with the measured values in this study, and also in other reported PiN diodes and MOSFETs. In high-temperature measurement, breakdown voltage exhibited a positive temperature coefficient and multipli

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13

Loh, W. S., J. P. R. David, B. K. Ng, et al. "Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes." Materials Science Forum 615-617 (March 2009): 311–14. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.311.

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Hole initiated multiplication characteristics of 4H-SiC Separate Absorption and Multiplication Avalanche Photodiodes (SAM-APDs) with a n- multiplication layer of 2.7 µm were obtained using 325nm excitation at temperatures ranging from 300 to 450K. The breakdown voltages increased by 200mV/K over the investigated temperature range, which indicates a positive temperature coefficient. Local ionization coefficients, including the extracted temperature dependencies, were derived in the form of the Chynoweth expression and were used to predict the hole multiplication characteristics at different tem

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14

Nguyen, D. M., Christophe Raynaud, Mihai Lazar, et al. "OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients." Materials Science Forum 717-720 (May 2012): 545–48. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.545.

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Optical Beam Induced Current (OBIC) measurements have been performed on 4H-SiC avalanche diodes with very thin and highly doped avalanche region. The light source used in this study is an Ar-laser with a wavelength of 351 nm which results in a mixed carrier injection. From these measurements, impact ionization coefficients for 4H-SiC have been extracted in the electric field range from 3 to 4.8 MV/cm. In combination with ionization coefficients in our previous paper extracted from diodes with lowly doped avalanche region, we propose a set of parameters of impact ionization coefficients for 4H-

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15

Ji, Dong, Ke Zeng, Zhengliang Bian, et al. "A discussion on various experimental methods of impact ionization coefficient measurement in GaN." AIP Advances 12, no. 3 (2022): 030703. http://dx.doi.org/10.1063/5.0083111.

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Impact ionization coefficients play a critical role in semiconductors. In addition to silicon, silicon carbide and gallium nitride are important semiconductors that are being seen more as mainstream semiconductor technologies. As a reflection of the maturity of these semiconductors, predictive modeling has become essential to device and circuit designers, and impact ionization coefficients play a key role here. Recently, several studies have measured impact ionization coefficients. We dedicated the first part of our study to comparing three experimental methods to estimate impact ionization co

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16

Ghin, R., J. P. R. David, M. Hopkinson, M. A. Pate, G. J. Rees, and P. N. Robson. "Impact ionization coefficients in GaInPp–i–ndiodes." Applied Physics Letters 70, no. 26 (1997): 3567–69. http://dx.doi.org/10.1063/1.119235.

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17

Hatakeyama, T., T. Watanabe, T. Shinohe, K. Kojima, K. Arai, and N. Sano. "Impact ionization coefficients of 4H silicon carbide." Applied Physics Letters 85, no. 8 (2004): 1380–82. http://dx.doi.org/10.1063/1.1784520.

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18

Mikhailova M.P., Dmitriev A.P., Andreev I.A., Ivanov E.V., Kunitsyna E.V., and Yakovlev Yu.P. "Monopolarity of hot charge carrier multiplication in A-=SUP=-III-=/SUP=-B-=SUP=-V-=/SUP=- semiconductors at high electric field and noiseless avalanche photodiodes (a R e v i e w)." Semiconductors 56, no. 13 (2022): 2031. http://dx.doi.org/10.21883/sc.2022.13.53893.9701.

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The results of theoretical and experimental studies of impact ionization processes and charge carrier heating in multi-valley AIIIBV semiconductors at high electric field are presented and their relationship with the features of the band structure is discussed. A role of subsidiary L- and X-valleys, complex structure of the valence band and orientation dependence of the ionization coefficients are taken into account. A new approach to the choice of semiconductor materials with a large ratio of the ionization coefficients of holes and electrons to create the noiseless avalanche photodiodes due

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19

Михайлова, М. П., А. П. Дмитриев, И. А. Андреев, Э. В. Иванов, Е. В. Куницына та Ю. П. Яковлев. "Монополярное умножение горячих носителей заряда в полупроводниках A-=SUP=-III-=/SUP=-B-=SUP=-V-=/SUP=- в сильном электрическом поле и бесшумные лавинные фотодиоды (О б з о р)". Физика и техника полупроводников 55, № 11 (2021): 995. http://dx.doi.org/10.21883/ftp.2021.11.51552.9701.

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The results of theoretical and experimental studies of impact ionization processes and charge carrier heating in multi-valley A3B5 semiconductors at high electric field are presented and their relationship with the features of the band structure is discussed. A role of subsidiary L- and X-valleys, complex structure of the valence band and orientation dependence of the ionization coefficients are taken into account. A new approach to the choice of semiconductor materials with a large ratio of the ionization coefficients of holes and electrons to create the noiseless avalanche photodiodes due to

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20

Ishii, Junya, Tadahiro Kurosawa, and Kato Masahiro. "The NMIJ air kerma primary standard for high energy x-ray beams in 300–450 kV." Biomedical Physics & Engineering Express 8, no. 1 (2021): 015021. http://dx.doi.org/10.1088/2057-1976/ac3e89.

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Abstract Accurate radiation dosimetry is required for radiation protection in various environments. Therefore, dosemeters and dose-rate meters must be calibrated in standard radiation fields. The National Metrology Institute of Japan (NMIJ) expands the energy range of x-ray reference field measurement up to 450 kV using a cylindrical graphite-walled cavity ionization chamber. Departure from the condition of the Spencer-Attix cavity theory was evaluated by comparing the measurement results obtained using the cavity ionization and the free-air ionization chambers, which are used as the primary s

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21

Bellotti, Enrico, and Masahiko Matsubara. "(Invited) A Closer Look at Impact Ionization Coefficients in Wide Band Gap Semiconductors: Theoretical Models and Measured Data." ECS Meeting Abstracts MA2023-01, no. 32 (2023): 1819. http://dx.doi.org/10.1149/ma2023-01321819mtgabs.

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The direct measurement of ionization coefficients in wide band gap semiconductor materials is challenging due to the need to operate at high field strengths and the requirement of specific test structures that enable single carrier injection. More often than not, ionization coefficients are inferred from current multiplication data measured in p-n junctions or transistors structures. Unfortunately, sub-par material quality, processing issues and inappropriate measuring techniques have led to ionization coefficients values that are contradictory and with large variation among different datasets

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22

Jeong, Yeuncheol, Alexander V. Yushchenko, and Dmytry N. Doikov. "The Interaction Between Accretion from the Interstellar Medium and Accretion from the Evolved Binary Component in Barium Stars." Journal of Astronomy and Space Sciences 35, no. 1 (2018): 1–6. http://dx.doi.org/10.5140/jass.2018.35.1.1.

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The reanalysis of the previously published abundance pattern of mild barium star HD202109 (ζ Cyg) and the chemical compositions of 129 thin disk barium stars facilitated the search for possible correlations of different stellar parameters with second ionization potentials of chemical elements. Results show that three valuable correlations exist in the atmospheres of barium stars. The first is the relationship between relative abundances and second ionization potentials. The second is the age dependence of mean correlation coefficients of relative abundances vs. second ionization potentials, an

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23

Loh, W. S., C. Mark Johnson, J. S. Ng, et al. "Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes." Materials Science Forum 556-557 (September 2007): 339–42. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.339.

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Hole initiated avalanche multiplication characteristics of 4H-SiC avalanche photodiodes have been studied. The diodes had n+-n-p SiC epitaxial layers grown on a p-type substrate. These 1 mm2 devices had very low dark currents and exhibited sharp breakdown at voltages of approximately 500V. The diodes multiplication characteristics appeared to be identical when the wavelength of the illuminating light from the top varied from 288 to 325nm, implying that almost pure hole initiated multiplication was occurring. The multiplication factor data were modelled using a local multiplication model with i

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24

Jonauskas, Valdas. "Electron-impact double ionization of the carbon atom." Astronomy & Astrophysics 620 (December 2018): A188. http://dx.doi.org/10.1051/0004-6361/201834303.

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Electron-impact single- and double-ionization cross sections and Maxwellian rate coefficients are presented for the carbon atom. Scaling factors are introduced for the electron-impact excitation and ionization cross sections obtained in the distorted wave (DW) approximation. It is shown that the scaled DW cross sections provide good agreement with measurements for the single ionization of the C atom and C1+ ion. The direct double-ionization (DDI) process is studied using a multi-step approach. Ionization–ionization, excitation–ionization–ionization, and ionization–excitation–ionization branche

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25

Taylor, R. D., and A. W. Ali. "Collisional-radiative ionization and recombination coefficients for higher ionization stages of atomic nitrogen." Journal of Quantitative Spectroscopy and Radiative Transfer 42, no. 2 (1989): 91–103. http://dx.doi.org/10.1016/0022-4073(89)90091-5.

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26

Dilmi, S., and E. Guedda. "Calculation of Ionization Rate Coefficients of Heliumoide Iron." Journal of Fundamental and Applied Sciences 4, no. 1 (2014): 59. http://dx.doi.org/10.4314/jfas.v4i1.9.

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27

Plimmer, S. A., J. P. R. David, G. J. Rees, and P. N. Robson. "Ionization coefficients in AlxGa1-xAs (x= 0 - 0.60)." Semiconductor Science and Technology 15, no. 7 (2000): 692–99. http://dx.doi.org/10.1088/0268-1242/15/7/307.

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28

Kuschel, Thomas, Ilija Stefanović, Gordana Malović, Dragana Marić, and Zoran Lj Petrović. "Ionization coefficients for argon in a micro-discharge." Plasma Sources Science and Technology 22, no. 4 (2013): 045001. http://dx.doi.org/10.1088/0963-0252/22/4/045001.

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29

Osaka, F., T. Mikawa, and T. Kaneda. "Impact ionization coefficients of electrons and holes in." IEEE Journal of Quantum Electronics 21, no. 9 (1985): 1326–38. http://dx.doi.org/10.1109/jqe.1985.1072835.

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30

Sun, C. C., A. H. You, and E. K. Wong. "Impact ionization coefficients of 4H- and 6H-SiC." European Physical Journal Applied Physics 60, no. 1 (2012): 10204. http://dx.doi.org/10.1051/epjap/2012120107.

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31

Kunihiro, K., K. Kasahara, Y. Takahashi, and Y. Ohno. "Experimental evaluation of impact ionization coefficients in GaN." IEEE Electron Device Letters 20, no. 12 (1999): 608–10. http://dx.doi.org/10.1109/55.806100.

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32

Taguchi, Kenko, Toshitaka Torikai, Yoshimasa Sugimoto, Kikuo Makita, and Hisahiro Ishihara. "Temperature dependence of impact ionization coefficients in InP." Journal of Applied Physics 59, no. 2 (1986): 476–81. http://dx.doi.org/10.1063/1.336655.

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33

Kim, Sang-Nam. "Ionization and Diffusion Coefficients in CH4Gas by Simulation." Transactions of the Korean Institute of Electrical Engineers P 63, no. 4 (2014): 317–21. http://dx.doi.org/10.5370/kieep.2014.63.4.317.

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34

M Shamsuzzaman, T Siddiqua, MMH Bhuiyan, ASM Habibullah Khan, and MS Rahman. "Assessment of calibration coefficient ND, W in terms of absorbed dose-to-water of some ionization chambers." Global Journal of Engineering and Technology Advances 5, no. 1 (2020): 025–31. http://dx.doi.org/10.30574/gjeta.2020.5.1.0066.

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Анотація:

The absorbed dose-to-water calibration coefficients ND,W of some ionization chambers were determined in terms of the secondary standard chambers in 60Co gamma-ray beam based on the TRS-398 protocol. The reference absorbed dose-to-water Dw were measured using secondary standard ionization chambers of model NE 2781#0537 (0.60 cm3 volume) and NE 2771#1205 (0.69 cm3 volume) which are traceable to the dosimetry laboratory of the International Atomic Energy Agency (IAEA). This study mainly focuses on the comparative assessment of the determined ND,W coefficients of twenty cylindrical ionization cham

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35

Li Zhen-ying. "DETERMINATION OF REAL IONIZATION AND ATTACHMENT COEFFICIENTS IN OXYGEN." Acta Physica Sinica 36, no. 4 (1987): 419. http://dx.doi.org/10.7498/aps.36.419.

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36

Maeda, Takuya, Tetsuo Narita, Shinji Yamada, et al. "Impact ionization coefficients and critical electric field in GaN." Journal of Applied Physics 129, no. 18 (2021): 185702. http://dx.doi.org/10.1063/5.0050793.

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37

Bulman, G. E., T. E. Zipperian, and L. R. Dawson. "Impact ionization coefficients in In0.2Ga0.8As/GaAs strained‐layer superlattices." Applied Physics Letters 49, no. 4 (1986): 212–14. http://dx.doi.org/10.1063/1.97174.

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38

Gutierrez‐Aitken, A. L., and P. K. Bhattacharya. "Impact ionization coefficients in strained InGaAs/InAlAs multiquantum wells." Journal of Applied Physics 73, no. 10 (1993): 5014–16. http://dx.doi.org/10.1063/1.353822.

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39

Roze, K., N. A. Bannov, K. W. Kim, W. C. Holton, and M. A. Littlejohn. "Temperature dependence of impact ionization coefficients in p-Si." Journal of Applied Physics 83, no. 9 (1998): 4988–90. http://dx.doi.org/10.1063/1.367303.

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40

Abou El-Ela, F. M. "Electron lucky-drift impact ionization coefficients of ZnS : Mn." Pramana 63, no. 5 (2004): 1089–97. http://dx.doi.org/10.1007/bf02704348.

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41

Marić, D., M. Radmilović-Radenović, and Z. Lj Petrović. "On parametrization and mixture laws for electron ionization coefficients." European Physical Journal D 35, no. 2 (2005): 313–21. http://dx.doi.org/10.1140/epjd/e2005-00172-y.

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42

Caccia, S., M. H. Fong, and R. Urso. "Ionization constants and partition coefficients of 1-arylpiperazine derivatives." Journal of Pharmacy and Pharmacology 37, no. 8 (1985): 567–70. http://dx.doi.org/10.1111/j.2042-7158.1985.tb03069.x.

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43

Dere, K. P. "Ionization rate coefficients for the elements hydrogen through zinc." Astronomy & Astrophysics 466, no. 2 (2007): 771–92. http://dx.doi.org/10.1051/0004-6361:20066728.

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44

Nguyen, D. M., C. Raynaud, N. Dheilly, et al. "Experimental determination of impact ionization coefficients in 4H-SiC." Diamond and Related Materials 20, no. 3 (2011): 395–97. http://dx.doi.org/10.1016/j.diamond.2011.01.039.

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45

Meglio, Duilio, Corrado Cianci, Aldo Di Carlo, and Paolo Lugli. "Non Local Impact Ionization Effects in Semiconductor Devices." VLSI Design 6, no. 1-4 (1998): 291–97. http://dx.doi.org/10.1155/1998/72767.

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Impact ionization processes define the breakdown characteristics of semiconductor devices. An accurate description of such phenomenon, however, is limited to very sophisticated device simulators such as Monte Carlo. A new physical model for the impact ionization process is presented, which accounts for dead space effects and high energy carrier transport at a Drift Diffusion level. Such model allows to define universal impact ionization coefficients which are device-geometry independent. By using available experimental data these parameters have been calculated for In0.53Ga0.47As.

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46

Oxley, M. P., and L. J. Allen. "ICSC: a program for calculating inelastic scattering cross sections for fast electrons incident on crystals." Journal of Applied Crystallography 36, no. 3 (2003): 940–43. http://dx.doi.org/10.1107/s0021889803002875.

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A computer program which calculates inner-shell ionization and backscattering cross sections for fast electrons incident on a crystal is presented. The program calculates the inelastic scattering coefficients for inner-shell ionization, pertinent to electron energy loss spectroscopy and energy dispersive X-ray analysis, using recently presented parameterizations of the atomic scattering factors. Orientation-dependent cross sections, suitable for atom location by channelling enhanced microanalysis, may be calculated. Inelastic scattering coefficients that allow the calculation of orientation-de

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47

Triaskin, Jaroslav, Timur Zalialiutdinov, Aleksei Anikin, and Dmitrii Solovyev. "Lowest-Order Thermal Correction to the Hydrogen Recombination Cross-Section in Presence of Blackbody Radiation." Atoms 9, no. 4 (2021): 80. http://dx.doi.org/10.3390/atoms9040080.

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In the present paper, the correction of the recombination and ionization processes of the hydrogen atom due to the thermal interaction of two charges was considered. The evaluation was based on a rigorous quantum electrodynamic (QED) approach within the framework of perturbation theory. The lowest-order radiative correction to the recombination/ionization cross-section was examined for a wide range of temperatures corresponding to laboratory and astrophysical conditions. The found thermal contribution was discussed both for specific states and for the total recombination and ionization coeffic

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48

Pal, Satyendra, Neeraj Kumar, and Anshu. "Electron-Collision-Induced Dissociative Ionization Cross Sections for Silane." Advances in Physical Chemistry 2009 (May 10, 2009): 1–9. http://dx.doi.org/10.1155/2009/309292.

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Secondary electron energy and angle dependent differential cross sections for the production of cations SiHn+ (n=0–3), H2+ and H+ resulting from dissociative ionization of SiH4by electron collision have been evaluated at fixed incident electron energies of 100 and 200 eV. The semiempirical formulation of Jain and Khare which requires the oscillator strength data as a major input has been employed. In the absence of experimental data for differential cross sections, the corresponding derived integral partial and total ionization cross sections in the energy range varying from ionization thresho

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Maiorov, Sergey, and Rusudan Golyatina. "Analytical formula for multiple ionization cross sections of rare gas atoms by electron and positron impact." Physical Sciences and Technology 11, no. 1-2 (2024): 94–101. http://dx.doi.org/10.26577/phst2024v11i1a11.

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The paper presents an analysis of data on the single and multiple ionization cross sections of rare gas atoms by electron impact and single ionization cross sections by positron impact. To approximate the cross section for single ionization of atoms of rare gases, as well as a large number of atoms of other elements, a semi-empirical formula with four parameters was proposed, which gives an accuracy of several percent in a wide energy range. Here we generalize our approach to the case of multiple ionization of an atom by electron impact and single ionization by positron impact. For the selecte

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Wang, Zhe, Yufeng Han, and Wei Cao. "Simplified Mixing Rules for Calculating Transport Coefficients of High-Temperature Air." International Journal of Aerospace Engineering 2023 (January 27, 2023): 1–15. http://dx.doi.org/10.1155/2023/7644738.

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The transport process of high-temperature air is vital in aerospace fields and has attracted increased attention in recent years. In this paper, an adequate study of factors affecting transport coefficients for high-temperature air is conducted. The results of a different-species model at different pressures and temperatures show that the 9-species air model is applicable to calculate the viscosity and translational thermal conductivity coefficients before significant ionization occurs. Based on the Chapman-Enskog method, simplified mixing rules for calculating viscosity and translational ther

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