Готові списки джерел за темами / Kirk effect

Добірка наукової літератури з теми "Kirk effect"

Автор: Grafiati
Опубліковано: 9 листопада 2022
Оновлено: 4 березня 2023

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Зміст

  1. Статті в журналах
  2. Дисертації
  3. Книги
  4. Частини книг
  5. Тези доповідей конференцій
  6. Звіти організацій

Статті в журналах з теми "Kirk effect":

1

Sun, Zhilin, Weifeng Sun, and Longxing Shi. "Modeling Kirk effect of RESURF LDMOS." Solid-State Electronics 49, no. 12 (December 2005): 1896–99. http://dx.doi.org/10.1016/j.sse.2005.09.006.

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2

Qin, Z., E. M. Sankara Narayanan, and M. M. De Souza. "The Kirk effect in the DELDI technology." Microelectronics Journal 31, no. 3 (March 2000): 175–85. http://dx.doi.org/10.1016/s0026-2692(99)00119-6.

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3

Eranen, S., M. M. Gronlund, M. Blomberg, and J. Kiihamaki. "The Kirk effect in the LIGBT devices." IEEE Transactions on Electron Devices 38, no. 8 (1991): 1919–24. http://dx.doi.org/10.1109/16.119034.

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4

Nie, Weidong, Fayou Yi, and Zongguang Yu. "Kirk effect and suppression for 20 V planar active-gap LDMOS." Journal of Semiconductors 34, no. 5 (May 2013): 054003. http://dx.doi.org/10.1088/1674-4926/34/5/054003.

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5

Mazhari, B., and H. Morkoç. "Effect of collector‐base valence‐band discontinuity on Kirk effect in double‐heterojunction bipolar transistors." Applied Physics Letters 59, no. 17 (October 21, 1991): 2162–64. http://dx.doi.org/10.1063/1.106115.

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6

Tao, N. G., and C. R. Bolognesi. "Kirk effect mechanism in type-II InP∕GaAsSb double heterojunction bipolar transistors." Journal of Applied Physics 102, no. 6 (September 15, 2007): 064511. http://dx.doi.org/10.1063/1.2783764.

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7

Zhou, D. B., D. J. Han, C. M. Sun, R. Yang, and K. Liang. "Low-threshold-switch phototransistor based on Kirk effect and float-zone silicon." Applied Physics Letters 90, no. 11 (March 12, 2007): 113513. http://dx.doi.org/10.1063/1.2713129.

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8

Zampardi, P. J., and Dee-Son Pan. "Delay of Kirk effect due to collector current spreading in heterojunction bipolar transistors." IEEE Electron Device Letters 17, no. 10 (October 1996): 470–72. http://dx.doi.org/10.1109/55.537078.

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9

Elias, D. C., and D. Ritter. "Kirk effect in bipolar transistors with a nonuniform dopant profile in the collector." IEEE Electron Device Letters 27, no. 1 (January 2006): 25–27. http://dx.doi.org/10.1109/led.2005.861401.

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10

Lai, Ciou Jhong, Gene Sheu, Ting Yao Chien, Chieh Chih Wu, Tzu Chieh Lee, Ravi Deivasigamani, Ching Yuan Wu, Chandrashekhar, and Shao Ming Yang. "Analysis of Kirk effect of an innovated high side Side-Isolated N-LDMOS device." MATEC Web of Conferences 44 (2016): 02006. http://dx.doi.org/10.1051/matecconf/20164402006.

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Статті в журналах Дисертації

Дисертації з теми "Kirk effect":

1

Ndoye, Mamadou Mustapha. "Contribution à l'étude du transistor bipolaire hyperfréquence sur puce de silicium." Bordeaux 1, 1997. http://www.theses.fr/1997BOR10682.

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Ce travail est une contribution à l'étude du transistor bipolaire hyperfréquence sur puce de silicium. Il présente tout d’abord deux méthodes originales permettant de réduire la Capacité extrinsèque Base-Collecteur, d'augmenter la tension de claquage Base-Collecteur, d'augmenter la tension Early VA, d'augmenter le gain en puissance maximal Gpmax et d'augmenter la fréquence de transition FT. Il présente ensuite un nouveau transistor, de structure hybride entre le NPN vertical et le NPN latéral, baptisé bipolaire-CLEV (à Collecteur Latéral-Emetteur Vertical). Ce travail est généralisable à d'autres technologies de transistors hyperfréquences telles que les transistors à substrats III-V ou les transistors à hétérojonctions
This work is a contribution to the study of the high-speed bipolar transistor on silicon chip. First, it presents two original methods allowing to reduce the Base-Collector extrinsic Capacitance, to increase the Base-Collector breakdown voltage, to increase the Voltage Early VA, to increase the maximum power gain Gpmax and to increase the transition frequency FT. Then, it presents a new transistor, hybrid structure between the vertical NPN and the lateral NPN, named bipolar-CLEV (lateral collector-vertical emitter). This study can be generalized to other high speed transistor technologies such as III-V substrate transistors or heterojunction transistors
2

Ndoye, Mamadou Moustapha. "Contribution à l'étude du transistor bipolaire hyperfréquence sur puce de silicium." Bordeaux 1, 1997. http://www.theses.fr/1997BOR10688.

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Ce travail est une contribution à l'étude du transistor bipolaire hyperfréquence sur puce de silicium. Il présente tout d’abord deux méthodes originales permettant de réduire la Capacité extrinsèque Base-Collecteur, d'augmenter la tension de claquage Base-Collecteur, d'augmenter la tension Early VA, d'augmenter le gain en puissance maximal Gpmax et d'augmenter la fréquence de transition FT. Il présente ensuite un nouveau transistor, de structure hybride entre le NPN vertical et le NPN latéral, baptisé bipolaire-CLEV (à Collecteur Latéral-Emetteur Vertical). Ce travail est généralisable à d'autres technologies de transistors hyperfréquences telles que les transistors à substrats III-V ou les transistors à hétérojonctions
This work is a contribution to the study of the high-speed bipolar transistor on silicon chip. First, it presents two original methods allowing to reduce the Base-Collector extrinsic Capacitance, to increase the Base-Collector breakdown voltage, to increase the Voltage Early VA, to increase the maximum power gain Gpmax and to increase the transition frequency FT. Then, it presents a new transistor, hybrid structure between the vertical NPN and the lateral NPN, named bipolar-CLEV (lateral collector-vertical emitter). This study can be generalized to other high speed transistor technologies such as III-V substrate transistors or heterojunction transistors
3

Ernst, Alexander N. (Alexander Nicolai). "Dynamics of the kink effect in InAlAs/InGaAs/InP HEMTs." Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/42741.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
Includes bibliographical references (leaves 68-72).
by Alexander N. Ernst.
M.Eng.
4

Workman, Craig D. "Effects of Static Stretching on Foot Velocity During the Instep Soccer Kick." DigitalCommons@USU, 2010. https://digitalcommons.usu.edu/etd/602.

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The purpose of this study was to assess the acute effects of static stretching on foot velocity at impact with a soccer ball. Eighteen Division I female soccer athletes underwent two test conditions separated by 48 hr. Each condition was randomly assigned and began by placing four retro-reflective markers on bony landmarks of the ankle (total of eight markers, four on each ankle). One condition was the no-stretch condition, in which each participant performed a self-paced jog for 5 min as a warm-up, and then sat quietly for 6 min before performing three maximal instep kicks into a net. The second condition was the stretch condition, which was identical to the no-stretch condition, except the participants performed a series of six randomly ordered stretches instead of sitting quietly for 6 min. Three-dimensional motion analysis was used to quantify the resultant velocity of the head of the 5th metatarsal immediately prior to foot impact with a soccer ball. The results of a dependent t test indicated that there was no significant difference between the no-stretch (18.34 ± 1.29 m/s) and stretch conditions (17.96 ± 1.55 m/s; p = .102, d = .3) Based on these findings, acute stretching performed one time for 30 s before maximal instep soccer kicking has no effect on the resultant foot velocity of Division 1A university female soccer players. Pre-event stretching performed in a like manner may best be prescribed at the discretion of the athlete.
5

Melton, Steven Allen. "Cryogenic temperature characteristics of bulk silicon and Silicon-on-Sapphire devices." Thesis, Kansas State University, 2012. http://hdl.handle.net/2097/14864.

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Master of Science
Department of Electrical and Computer Engineering
William Kuhn
Studies of Silicon-on-Sapphire (SOS) CMOS device operation in cryogenic environments are presented. The main focus was to observe the characteristic changes in high, medium and low threshold SOS NFETs as well as SOS silicide blocked (SN) resistors when the operational temperature is in the devices’ freeze-out range below 77 Kelvin. The measurements taken will be useful to any integrated circuit (IC) designer creating devices based on an SOS process intended to operate in cryogenic environments such as superconducting electronics and planetary probes. First, a 1N4001 rectifier and a 2N7000 NFET were tested to see how freeze-out effects standard diode and MOS devices. These devices were tested to see if the measurement setup could induce carrier freeze-out. Next, SOS devices were studied. Data was collected at room temperature and as low as 5 Kelvin to observe resistance changes in an SN resistor and kink effect, threshold voltage shifts and current level changes in transistors. A 2μm high threshold NFET was tested at room temperature, 50 Kelvin, 30 Kelvin and 5 Kelvin to observe effects on I-V curves at different temperatures with-in the freeze-out range. A 2μm medium threshold NFET was tested down to 56 Kelvin to see if the behavior is similar to the high threshold FET. A 2μm intrinsic, or low threshold, NFET was also tested with the assumption it would be the most susceptible to carrier freeze-out. All of the devices were found to behave well with only mild effects noted.
6

Lade, Per Magnar. "The effect of instep kick in intermittent sprint on heart rate and external workload." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for bevegelsesvitenskap, 2010. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-11347.

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Purpose: The aim of this study was to investigate the relationship between heart rate and external workload in intermittent sprint with and without instep kick. Participants: 20 male junior players participated in the field experiment consisting of different exercise with blocks of sprint. Method: The exercise was conducted on two different days and the order of the sprint with and without instep kick was changed each day. One sprint is 32 meters in total and last 5 to 6 seconds, with a 180 degrees turning point halfway. A new sprint was performed every 30 seconds. Recovery time between the 2 blocks of sprints was about 3 minutes. The exercise was used as a part of normal training regime which means that it was not added to the team’s weekly training dosage. Heart rate (HR) was recorded by the Polar Team 2 system and ZXY tracking device was used to record position and acceleration of the players from which work and power were calculated. Result: No significant effect was found for instep kick or players playing position in intermittent sprint. Significant differences were observed for average heart rate (HRavg) and peak heart rate (HRpeak), but not for duration of heart rate peak in seconds (TPHR) between the two days. Considering interaction between day and different blocks of sprint, significant differences was found for HRavg, HRpeak (p < 0.01), but not for duration of TPHR. For absolute work (AW), peak power acceleration (Ppeak-acc) and peak power deceleration (Ppeak-dec) statistical significant differences were not observed between days and blocks of sprint. No significant effect was found for interaction between condition and day for these variables. Conclusion: This study demonstrated that neither an instep kick nor playing position has an effect on sprint performance, meaning that adding instep kick into intermittent exercise does not affect performance regarding heart rate and external workload.
7

Lerbinger, Klaus. "Problèmes spectraux en MHD : effets non idéaux, stabilité du kink interne." Paris 11, 1988. http://www.theses.fr/1988PA112109.

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La magnétohydrodynamique présente un grand intérêt pour l'étude des plasmas de fusion magnétiquement confinés. Les équations linéarisées de la MHD idéale peuvent être mises sous une forme adaptée à l'analyse spectrale; le système est alors décrit par des opérateurs linéaires auto-adjoints. La prise en compte d'une résistivité finie affecte profondément le système. Les opérateurs linéaires ne sont plus auto-adjoints; de ce fait, on ne peut plus recourir à un principe variationnel. Les valeurs propres deviennent complexes et de nouvelles instabilités apparaissent. Nous présentons un code numérique qui résout les équations linéarisées de la MHD résistive en géométrie cylindrique; un choix judicieux des éléments finis (des polynômes cubiques d'Hermite et de polynômes quadratiques} s'avère nécessaire pour approximer correctement la totalité du spectre. Le problème aux valeurs propres généralisé est résolu par l'itération vectorielle inverse qui se montre la plus efficace. Nous discutons également un code d'évolution temporelle implicite fondé sur la même discrétisation. Les modes d'Alfvèn forment une composante continue du spectre. Dans le cas résistif ces modes singuliers disparaissent; les fonctions propres deviennent régulières et les valeurs propres se placent sur des courbes bien définies du plan complexe. Nous étudions également le spectre d'une couche de plasma dans laquelle la conductivité thermique est radiative. Nous montrons qu'en géométrie torique le kink interne est toujours instable pour des profils de courant creux et le taux de croissance est plus élevé que celui du kink interne pour un profil de courant monotone. Des simulations non linéaires de cette instabilité en géométrie cylindrique montrent qu'elle s'achève par une disruption ou une saturation, suivant l'énergie disponible.
8

Lee, Jia-Hui Jane. "Effect of donor KIR Genotype on the outcome of bone marrow transplantation." Thesis, Lee, Jia-Hui Jane (2013) Effect of donor KIR Genotype on the outcome of bone marrow transplantation. Honours thesis, Murdoch University, 2013. https://researchrepository.murdoch.edu.au/id/eprint/16228/.

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Haematopoietic stem cell transplantation is the only curative treatment for some forms of haematologcial malignancies and bone marrow failure. The role of donor Natural Killer (NK) cells that accompany the donor stem cells is under investigation. In particular, there is interest in the role of the killer immunoglobulin-like receptors (KIR) family of receptors expressed on the surface receptors of NK cells. In this study, we focused on the donor KIR genes and the possibility that the KIR receptors interact with other transplant variables to influence survival. We analyzed a cohort of 140 unrelated donors from bone marrow transplants carried out at Royal Perth Hospital and Princess Margaret Hospital. The variables that were analyzed for interactions with KIR were: cytomegalovirus (CMV) status, transplant graft source, conditioning agents. A number of significant interactions between KIR and transplant variables were identified, the strongest being the interaction between KIR2DS2 and the use of cyclophosphamide as a conditioning agent. Kaplan-Meier analyses showed that the presence of KIR2DS2 in a cyclophosphamide positive transplant resulted in a significantly improved survival (p=0.002) whereas the presence of KIR2DS2 in a cyclophosphamide negative transplant resulted in a poorer survival (p=0.032). Hence the presence of KIR2DS2 could be beneficial or deleterious depending on the presence or absence of cyclophosphamide. As this was an exploratory study, observations of the interactions discovered need to be confirmed in additional studies.
9

Langdon, Samantha Jayne. "Crassula helmsii (Kirk) Cockayne in the UK : comparative studies investigating direct and indirect effects on native plants and newt breeding." Thesis, University of Liverpool, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.423359.

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10

Pittari, Gianfranco. "NK Cell Tolerance of Self-Specific Apecific Activating Receptor KIR2DS1 in Individuals with Cognate HLA-C2 Ligand." Thesis, Paris 11, 2013. http://www.theses.fr/2013PA11T043.

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Les cellules tueuses naturelles (NK) sont régulées par des récepteurs activateurs et inhibiteurs. La plupart des récepteurs inhibiteurs reconnaisse des molécules du complexe majeur d'histocompatibilité (CMH) de classe I, et protège les cellules saines des phénomènes d'auto-immunité médiés par les cellules NK. Cependant, certains récepteurs activateurs, incluant le récepteur killer cell Ig-like receptor (KIR) 2DS1, reconnaissent aussi des ligands CMH de classe I. Cela pose la question de savoir comment les cellules NK qui expriment des récepteurs activateurs deviennent tolérantes au soi. Nous avons cherché à déterminer si la présence de HLA-C2, le ligand du récepteurs 2DS1, peut induire les cellules NK qui expriment le 2DS1 à développer un état de tolérance au soi. Indépendamment de la présence ou de l'absence du ligand HLA-C2 dans le donneur, une activité anti-HLA-C2 a été identifiée in vitro dans certains clones NK 2DS1-positifs. La fréquence des clones NK avec réactivité anti-HLA-C2 était élevée parmi les donneurs homozygotes pour HLA-C1. De façon étonnante, nous n'avons pas constaté de différence statistiquement significative dans la fréquence de cytotoxicité anti-HLA-C2 entre les donneurs HLA-C2 hétérozygotes et les donneurs sans ligand HLA-C2. Par contre, les donneurs HLA-C2 homozygotes montrent une fréquence réduite de clones NK avec réactivité anti-HLA-C2 par rapport aux autres donneurs. Clones 2DS1-positifs qui co-expriment des KIR inhibiteurs spécifiques des molécules HLA de classe I du soi n’étaient pas communément cytotoxiques, et la cytotoxicité anti-HLA-C2 était limité presque exclusivement à des clones positifs seulement pour 2DS1 (« single positive » 2DS1 clones). Nous avons aussi identifié des clones 2DS1 « single positive » avec réactivité anti-HLA-C2 dans des patients recevant une greffe de cellules souches hématopoïétiques à partir de donneurs 2DS1. Ces résultats montrent que plusieurs cellules NK avec réactivité anti-HLA-C2 sont présentes dans des donneurs 2DS1 soit hétérozygotes soit homozygotes pour HLA-C1. En revanche, les clones 2DS1-positifs obtenus par des donneurs homozygotes pour HLA-C2 sont fréquemment tolérants aux antigènes HLA-C2
NK cells are regulated by inhibiting and activating cell surface receptors. Most inhibitory receptors recognize MHC-class I antigens, and protect healthy cells from NK cell-mediated auto-aggression. However, certain activating receptors, including the human killer cell Ig-like receptor (KIR) 2DS1, also recognize MHC-class I. This raises the question of how NK cells expressing such activating receptors are tolerized to host tissues. We investigated whether the presence of HLA-C2, the cognate ligand for 2DS1, induces tolerance in 2DS1-expressing NK cells. Anti-HLA-C2 activity could be detected in vitro in some 2DS1 positive NK clones irrespective of presence or absence of HLA-C2 ligand in the donor. The frequency of anti-HLA-C2 reactivity was high in donors homozygous for HLA-C1. Surprisingly, there was no significant difference in frequency of anti-HLA-C2 cytotoxicity in donors heterozygous for HLA-C2 and donors without HLA-C2 ligand. However, donors homozygous for HLA-C2 had significantly reduced frequency of anti-HLA-C2 reactive clones as compared to all other donors. 2DS1 positive clones that express inhibitory KIR for self-HLA class I were commonly non-cytotoxic, and anti-HLA-C2 cytotoxicity was nearly exclusively restricted to 2DS1 single positive clones lacking inhibitory KIR. 2DS1 single positive NK clones with anti-HLA-C2 reactivity were also present post-transplantation in HLA-C2 positive recipients of hematopoietic stem cell transplants from 2DS1 positive donors. These results demonstrate that many NK cells with anti-HLA-C2 reactivity are present in HLA-C1 homozygous and heterozygous donors with 2DS1. In contrast, 2DS1 positive clones from HLA-C2 homozygous donors are frequently tolerant to HLA-C2
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Книги з теми "Kirk effect":

1

Chu, Kang-hyŏn. Tokto kangch'i myŏlchongsa: Ok'i kyŏnmunnok : chong myŏngchong e kwanhan panmunmyŏngsajŏk kirok. 8th ed. Kyŏnggi-do P'aju-si: Sŏhae Munjip, 2016.

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2

Wright, Keith T. Kick the sugar kraving before it kicks you: Sugar and its effects on your body and mind. Brooklyn, NY: A&B Publishers Group, 2001.

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3

Hirschfelder, Arlene. Kick Butts! Scarecrow Press, 2001.

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4

Wright, Keith T. Kick the Sugar Kraving Before It Kicks You: Sugar and Its Effects on Your Body and Mind. A & B Book Dist Inc, 2004.

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5

Cooper, Craig. Your new prime: 30 days to better sex, eternal strength, and a kick-ass life after 40. 2015.

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6

Pathrose, Plato. ADAS and Automated Driving: A Practical Approach to Verification and Validation. SAE International, 2022. http://dx.doi.org/10.4271/9781468604146.

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The day will soon come when you will be able to verbally communicate with a vehicle and instruct it to drive to a location. The car will navigate through street traffic and take you to your destination without additional instruction or effort on your part. Today, this scenario is still in the future, but the automotive industry is racing to toward the finish line to have automated driving vehicles deployed on our roads. ADAS and Automated Driving: A Practical Approach to Verification and Validation focuses on how automated driving systems (ADS) can be developed from concept to a product on the market for widescale public use. It covers practically viable approaches, methods, and techniques with examples from multiple production programs across different organizations. The author provides an overview of the various Advanced Driver Assistance Systems (ADAS) and ADS currently being developed and installed in vehicles. The technology needed for large-scale production and public use of fully autonomous vehicles is still under development, and the creation of such technology is a highly innovative area of the automotive industry. This text is a comprehensive reference for anyone interested in a career focused on the verification and validation of ADAS and ADS. The examples included in the volume provide the reader foundational knowledge and follow best and proven practices from the industry. Using the information in ADAS and Automated Driving, you can kick start your career in the field of ADAS and ADS.
7

Rothenberger, Liane, Joachim Krause, Jannis Jost, and Kira Frankenthal, eds. Terrorismusforschung. Nomos Verlagsgesellschaft mbH & Co. KG, 2022. http://dx.doi.org/10.5771/9783748904212.

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Terrorism is first and foremost viewed as a matter of security policy; however, its emergence, perception, effects, prevention and mitigation actually involve a multitude of societal sectors as well as academic fields, which also means that numerous academics, practitioners and decision-makers are in a position to contribute to analysing and countering terrorism. This handbook serves as the first German-language reference work on terrorism studies, capturing the complexity of this subject in its entirety. By using theories and perspectives from various academic disciplines, the handbook encourages scholars and students to apply their expertise to the field of terrorism studies and to emphasise interdisciplinary work. With contributions by Sebastian Baden, Stefanie Ballscheidt, Constanze Beierlein, Brahim Ben Slama, Christina Binder, Yannick Birlinger, Dana Bönisch, Raphael Bossong, Damaris Braun, Donald E. Brown, Carolin Coenen, Alexandra Dick, Dorothee Dienstbühl, Carola Dietze, Gisela Diewald-Kerkmann, Andreas Elter, Jérôme Endrass, Frank Fiedrich, Kai Fischer, Kira Frankenthal, Lena Frischlich, Michael Fürstenberg, Antje Glück, Stefan Goertz, April Gould, Anita Grabowska, Marc Graf, Frank Greuel, Thomas Grumke, Adrian Guelke, John Guelke, Valerie Hase, Hendrik Hegemann, Eva Herschinger, Julian Hohner, Björn Hossfeld, Simon Isemann, Klaus Peter Japp, Jannis Jost, Jana Kärgel, Markus Kaim, Uwe Kemmesies, Alexander Kocks, Burkhart Kowitz, Joachim Krause, Maximilian Kreter, Kristin Kuck, Stefan Kühl, Vincenz Leuschner, Rüdiger Lohlker, Tim Lukas, Saskia Lützinger, Tobias Meilicke, Kevin Moull, Mitra Moussa Nabo, Katharina Obens, Terri Patterson, Anneke Petzsche, Armin Pfahl-Traughber, Daniela Pisoiu, Matthias Quent, Diana Rieger, Julia Rosin, Astrid Rossegger, Liane Rothenberger, Gregory B. Saathoff, Hans-Jakob Schindler, Alex P. Schmid, Anja Schmidt-Kleinert, Friedrich Schneider, Sylvia Schraut, Nils Schuhmacher, Tanjev Schultz, Heidi Schulze, Julia Schumacher, Nauel Franziska Semaan, Norman Siewert, Kerstin Sischka, Alexander Spencer, Alexander Stolz, Alexander Straßner, Magdalena von Drachenfels, Malte von Ramin, Christian Wagner, La Toya Waha, Eva Walther, Janet I. Warren, Harald Weilnböck, Martin Wengeler, Josephin Winkler, Nils Wörmer, Thomas Wurmb, Ricardo Martin Zimic Zare and Bernd Zywietz.
8

Heinisch, Reinhard, Christina Holtz-Bacha, and Oscar Mazzoleni, eds. Political Populism. Nomos Verlagsgesellschaft mbH & Co. KG, 2021. http://dx.doi.org/10.5771/9783748907510.

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Populism represents the greatest political challenge to Western democracies since World War II. The electoral successes of populist parties and actors, Brexit, the presidency of Donald Trump or campaigns against containing the coronavirus pandemic are expressions of this phenomenon, in which the electorate is mobilised against supposed elites. The revised and expanded handbook Political Populism offers a comprehensive theoretical and empirical introduction to the causes and effects of political populism, especially in the democratic systems of Europe, but also in North and South America. It focuses on explaining populism as a consequence of a legitimation crisis of the representative system as well as on the controversies and limitations in the current academic debate. Drawing on political and communication science, the book also offers a comprehensive analysis of the effects of populism on various policy areas, such as environmental, health and economic policy. With contributions by Tjitske Akkerman, Manuel Anselmi, Wolfgang Aschauer, Hans-Georg Betz, Cecilia Biancalana, Paul Blokker, Giuliano Bobba, María Esperanza Casullo, Carlos de la Torre, Paula Diehl, Sarah C. Dingler, Martin Dolezal, Marco Fölsch, Flavia Freidenberg, Sergiu Gherghina, Florian Habersack, Vlastimil Havlík, Kirk A. Hawkins, Reinhard Heinisch, Christina Holtz-Bacha, Robert A. Huber, Gilles Ivaldi, Philip Kitzberger, Benjamin Krämer, Maria Elisabetta Lanzone, Zoe Lefkofridi, Dietmar Loch, Miroslav Mareš, Alfio Mastropaolo, Oscar Mazzoleni, Sergiu Miscoiu, Teun Pauwels, Franca Roncarolo, Saskia Pauline Ruth, Carlo Ruzza, Steven Saxonberg, Christian H. Schimpf, Damir Skenderovic, Sorina Soare, Lone Sorensen, Carlos H. Waisman, Carsten Wegscheider and Sandra Vergari. With a welcome expansion in cases and policy fields, the second edition of Political Populism: Handbook on Concepts, Questions and Strategies for Research brings together scholars from a range of disciplines to reflect on the fundamental challenge populism poses today. This Handbook is essential to every reader who wants to understand where populism comes from, how it manifests and how it influences policies, political actors and the very institutions that make democracy. Theoretically sophisticated, substantiated in its content yet approachable for the interest reader, this Handbook marks an important step in the appreciation of the complexity and consequences of this global phenomenon. Annika Werner, Australian National University Two decades of turbulent political history show that populism is here to stay, and to shape politics for a long time to come. It is considered a serious threat to traditional democratic institutions. That’s why political and communication scientists have massively engaged in studying it, in explaining it, in analyzing its features and implications. Among the several recent scholarly productions, this Handbook is perhaps the best tool put in the hands of all those who want to get a multi-dimensional yet comprehensive understanding of political populism as it is developing in Europe and in the Americas. Definitely a must-have book! Gianpietro Mazzoleni, Università di Milano, Italy This highly readable and detailed Handbook synthetizes a wealth of accumulated and innovative research on contemporary populism in Europe and the Americas. Drawing the insights of a distinguished group of specialists, the volume presents a comprehensive and updated view of the vibrant field of populist studies. Its four sections and thirty-four chapters provide stimulating perspectives on the theory, politics, and communicational dimensions of populism as well on emerging areas of research. A must read for anyone interested in understanding the complexities of a phenomenon that is likely to remain an enduring and unsettling presence in the political life of XXI century democracies. Enrique Peruzzotti, Universidad Torcuato Di Tella, Argentina

Частини книг з теми "Kirk effect":

1

Hafez, I. M., G. Ghibaudo, and F. Balestra. "Analytical Modelling of the Kink Effect in MOS Transistors." In ESSDERC ’89, 897–900. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-52314-4_186.

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2

Ukrainskii, I. I., M. K. Sheinkman, and K. I. Pokhodnia. "Kink Nature of Current Carriers in High-T c Superconductor-Oxides." In Electron-Electron Correlation Effects in Low-Dimensional Conductors and Superconductors, 41–47. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76753-1_5.

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Eberlein, T. A. G., R. Jones, and A. T. Blumenau. "Theory of Dislocations in SiC: The Effect of Charge on Kink Migration." In Silicon Carbide and Related Materials 2005, 321–26. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.321.

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Bažant, Zdeněk P., Jang-Jay H. Kim, Isaac M. Daniel, Emilie Becq-Giraudon, and Goangseup Zi. "Size effect on compression strength of fiber composites failing by kink band propagation." In Fracture Scaling, 103–41. Dordrecht: Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-011-4659-3_7.

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5

Fuse, M., Y. Sakata, T. Inoue, K. Yamauchi, and Y. Yatsuda. "Kink Effect in the Double-Gate Accumulation-Mode N-Channel Polysilicon Thin-Film Transistors." In Springer Proceedings in Physics, 370–75. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93413-1_50.

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Kalogera, V. "The Effects of Kick Velocities on the Formation of Low-Mass X-ray Binaries." In The Many Faces of Neutron Stars, 505–11. Dordrecht: Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-015-9139-3_31.

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Sarajlić, M., and R. M. Ramović. "N-Type Silicon Electron Mobility and its Relationship to the Kink Effect for Nano-Scaled SOI NMOS Devices." In Materials Science Forum, 153–58. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-441-3.153.

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Chen, Li Qun, and Zheng Chen Qiu. "Electronic structure and doping effect of Ni and Co in the kink on the edge dislocation of bcc iron." In Defect and Diffusion Forum, 37–46. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-37-x.37.

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Minguez, Rikardo, Erlantz Lizundia, Maider Iturrondobeitia, Ortzi Akizu-Gardoki, and Estibaliz Saez-de-Camara. "Education in Circular Economy: Focusing on Life Cycle Thinking at the University of the Basque Country." In Lecture Notes in Mechanical Engineering, 360–65. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-70566-4_57.

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AbstractSince 2002, the University of the Basque Country (UPV/EHU) has supported several teaching experiences related to the so-called Life Cycle Thinking or Ecodesign in collaboration with local Institutions. The kick off was the Ecodesign Learning Center aiming to promote environmental education at the Faculty of Engineering in Bilbao. In this framework, the last effort has been the implementation of a Master’s Degree entitled Circular Economy: Business Application. This course has been successfully implemented in the 2019–2020 academic year and has been specifically designed to provide training in circular economy for people with backgrounds as varied as product manufacturing engineering, environmental engineering or economics. These studies are aimed to become a European reference in its goal of promoting circular economy, life cycle thinking, ecodesign and sustainable development. This paper analyzes the learning issues and characteristics of this Master's degree placing a special emphasis on its novel competencies and learning outcomes for our society. It can be concluded that the Master's degree is a pioneering teaching experience, being the forefront of Circular Economy Education in Southwestern Europe.
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Qiu, Zheng Chen, and Li Qun Chen. "First-Principles Investigation of the Alloying Effect of Mn and Cr in the Kink on the Edge Dislocation in BCC Iron." In Defect and Diffusion Forum, 61–70. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-54-x.61.

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Тези доповідей конференцій з теми "Kirk effect":

1

Jiang, Hao, Jie Zheng, and Marco Racanelli. "Kirk Effect Induced Bias Dependency of Thermal Resistance in SiGe HBTs." In 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. IEEE, 2008. http://dx.doi.org/10.1109/smic.2007.25.

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Jiang, Hao, Jie Zheng, and Marco Racanelli. "Kirk Effect Induced Bias Dependency of Thermal Resistance in SiGe HBTs." In 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. IEEE, 2008. http://dx.doi.org/10.1109/smic.2008.25.

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Jeon, Byung-Chul, Seung-Chul Lee, and Min-Koo Han. "Second Breakdown of 18V GGNMOS induced by Kirk Effect Under ESD." In 2002 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2002. http://dx.doi.org/10.7567/ssdm.2002.p2-7.

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Huang, Y.-H., P. J. Liao, Y.-H. Lee, M. J. Chen, T. Y. Ho, and Lucy Chang. "Investigation of Kirk-Effect Induced Hot-Carrier-Injection in High-Voltage Power Devices." In 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2018. http://dx.doi.org/10.1109/ipfa.2018.8452525.

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Liu, H. G., Y. P. Zeng, O. Ostinelli, and C. R. Bolognesi. "Kirk Effect in Type-II InP/GaAsSb DHBTs with a Collector Doping Spike." In 2007 International Conference on Indium Phosphide and Related Materials. IEEE, 2007. http://dx.doi.org/10.1109/iciprm.2007.381211.

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Yan, C. R., J. F. Chen, C. Y. Lin, H. T. Hsiu, Y. C. Liao, M. T. Yang, Y. C. Lin, and H. H. Chen. "Study of Off-State Breakdown and Hot-Carrier improvement by Suppression of Kirk Effect in LDMOS with Gradual Junction Structure." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.ps-3-30.

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Козаченко, Екатерина, Ekaterina Kozachenko, Евгения Давыдова, and Evgenia Davydova. "A "Labyrinth" toy for 6-7 Years Old Children as a Way of Intellectual Development of a Child." In 29th International Conference on Computer Graphics, Image Processing and Computer Vision, Visualization Systems and the Virtual Environment GraphiCon'2019. Bryansk State Technical University, 2019. http://dx.doi.org/10.30987/graphicon-2019-2-202-206.

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The article considers the problem of a child’s quick loss of interest in a toy and its solution by creating an intellectual toy based on the experience of scientific research in the field of labyrinthology. Passing puzzles in the form of a maze have a beneficial effect on the child’s intellect, develops spatial thinking, memory and teaches the child how to find solutions to problems at a subconscious level, also disciplines and develops concentration. For a hull development the art design method was applied. A prototype of the designed toy is a cryptex - a portable storage used to hide secret messages invented by Leonardo Da Vinci and implemented by Justin Kirk Nevinson. The labyrinth system is based on the fractal tree method. The fractal labyrinth has a hierarchical (grid) structure, which creates more chances for a quick passage of the labyrinth without obstacles, but since the goal of the toy is to develop the intelligence of the child, it was decided to complicate the structure of the labyrinth by adding dead-end branches and additional tracks. Entering a dead-end branch allows the child to find and analyze the optimal moves in the game.
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Prager, Aaron A., Hubert C. George, Alexei O. Orlov, and Gregory L. Snider. "Cryogenic MOSFET kink effect abatement." In 2008 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2008. http://dx.doi.org/10.1109/snw.2008.5418490.

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Alficandra, Tandiyo Rahayu, Oktia Woro Kasmini Handayani, and Heny Setyawati. "Effect of Exercise Variations Against Kick Accuracy Into Hurdles (Shooting): Game Football Extracurricular Male Students of SMA Negeri 1 Kampar Kiri." In International Conference on Science and Education and Technology (ISET 2019). Paris, France: Atlantis Press, 2020. http://dx.doi.org/10.2991/assehr.k.200620.076.

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Park, H. J., M. Bawedin, K. Sasaki, J.-A. Martino, and S. Cristoloveanu. "Is there a kink effect in FDSOI MOSFETs?" In 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). IEEE, 2017. http://dx.doi.org/10.1109/ulis.2017.7962564.

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Звіти організацій з теми "Kirk effect":

1

Wu, Yanlin, and C. Z. Cheng. Alpha particle effects on the internal kink modes. Office of Scientific and Technical Information (OSTI), August 1994. http://dx.doi.org/10.2172/10176063.

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Wu, Y., C. Z. Cheng, and R. B. White. Alpha particle effects on the internal kink and fishbone modes. Office of Scientific and Technical Information (OSTI), June 1994. http://dx.doi.org/10.2172/10156796.

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3

Card, David, David S. Lee, Zhuan Pei, and Andrea Weber. Inference on Causal Effects in a Generalized Regression Kink Design. W.E. Upjohn Institute, January 2015. http://dx.doi.org/10.17848/wp15-218.

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4

Sharma, Praveen Kumar, and Lloyd Smith. The effect of pressure and kick speed in soccer on head injury and goalkeeper movement. Purdue University, 2022. http://dx.doi.org/10.5703/1288284317535.

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Card, David, David Lee, Zhuan Pei, and Andrea Weber. Nonlinear Policy Rules and the Identification and Estimation of Causal Effects in a Generalized Regression Kink Design. Cambridge, MA: National Bureau of Economic Research, November 2012. http://dx.doi.org/10.3386/w18564.

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Ferron, J. R., L. L. Lao, T. H. Osborne, E. J. Strait, T. S. Taylor, S. J. Thompson, A. D. Turnbull, and O. Sauter. The effect of the edge current density on confinement and kink mode stability in H-mode and VH-mode discharges. Office of Scientific and Technical Information (OSTI), July 1994. http://dx.doi.org/10.2172/10169668.

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G.Y. Fu, W. Park, H.R. Strauss, J. Breslau, J. Chen, S. Jardin, and L.E. Sugiyama. Global Hybrid Simulations of Energetic Particle Effects on the n=1 Mode in Tokamaks: Internal Kink and Fishbone Instability. Office of Scientific and Technical Information (OSTI), August 2005. http://dx.doi.org/10.2172/842537.

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Card, David, Andrew Johnston, Pauline Leung, Alexandre Mas, and Zhuan Pei. The Effect of Unemployment Benefits on the Duration of Unemployment Insurance Receipt: New Evidence from a Regression Kink Design in Missouri, 2003-2013. Cambridge, MA: National Bureau of Economic Research, January 2015. http://dx.doi.org/10.3386/w20869.

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