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Готові списки джерел за темами / Laser lift-off

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Добірка наукової літератури з теми "Laser lift-off"

Автор: Grafiati

Опубліковано: 28 травня 2022

Оновлено: 31 липня 2025

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Статті в журналах з теми "Laser lift-off"

1

Pool, Robert. "Lift-Off Laser: GaAs on Glass." Science 243, no. 4894 (1989): 1009–10. http://dx.doi.org/10.1126/science.243.4894.1009.b.

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2

POOL, R. "Lift-Off Laser: GaAs on Glass." Science 243, no. 4894 (1989): 1009–10. http://dx.doi.org/10.1126/science.243.4894.1009-a.

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3

Lu, Yong-Feng, and Yoshinobu Aoyagi. "Laser-Induced Dry Lift-off Process." Japanese Journal of Applied Physics 34, Part 2, No. 12B (1995): L1669—L1670. http://dx.doi.org/10.1143/jjap.34.l1669.

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4

Moerl, Ludwig. "ArF laser induced lift-off process." Microelectronic Engineering 5, no. 1-4 (1986): 453–58. http://dx.doi.org/10.1016/0167-9317(86)90076-6.

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5

Bhuian, B., R. J. Winfield, and G. M. Crean. "Laser polymerization-based novel lift-off technique." Applied Surface Science 255, no. 10 (2009): 5150–53. http://dx.doi.org/10.1016/j.apsusc.2008.07.106.

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6

Chen, Xuekang, Akiharu Morimoto, Minoru Kumeda, and Tatsuo Shimizu. "Thin Film Patterning by Laser Lift-Off." Japanese Journal of Applied Physics 41, Part 1, No. 5A (2002): 3099–100. http://dx.doi.org/10.1143/jjap.41.3099.

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7

Kawan, Anil, and Soon Jae Yu. "Laser Lift-Off of the Sapphire Substrate for Fabricating Through-AlN-Via Wafer Bonded Absorption Layer Removed Thin Film Ultraviolet Flip Chip LED." Transactions on Electrical and Electronic Materials 22, no. 2 (2021): 128–32. http://dx.doi.org/10.1007/s42341-020-00273-1.

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AbstractIn this study we report chip fabrication process that allows the laser lift-off of the sapphire substrate for the transfer of the GaN based thin film flip chip to the carrier wafer. The fabrication process includes 365-nm ultraviolet flip chip LED wafer align bonding with through-AlN-via wafer and sapphire laser lift-off. n-holes with the diameter of 100 µm were etched on the GaN epilayers for accessing n-type GaN. Through-AlN-via size was 110-µm and filled by Cu electroplating method for the electrical connection. Mechanical stabilization to prevent the GaN epilayers cracking and frag

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8

Hecht, Jeff. "Fusion: Lift-off for billion dollar laser facility." Physics World 7, no. 12 (1994): 11. http://dx.doi.org/10.1088/2058-7058/7/12/13.

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9

Delmdahl, R., R. Pätzel, and J. Brune. "Large-Area Laser-Lift-Off Processing in Microelectronics." Physics Procedia 41 (2013): 241–48. http://dx.doi.org/10.1016/j.phpro.2013.03.075.

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10

Delmdahl, Ralph, Malene Fricke, and Burkhard Fechner. "Laser lift-off systems for flexible-display production." Journal of Information Display 15, no. 1 (2014): 1–4. http://dx.doi.org/10.1080/15980316.2014.881428.

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Дисертації з теми "Laser lift-off"

1

Ueda, Tetsuzo. "Light-Emitting Devices Using GaN Separated from Sapphire Substrates by Laser Lift-off Technique." 京都大学 (Kyoto University), 2011. http://hdl.handle.net/2433/142257.

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Lam, N. D., S. Kim, J. J. Lee, K. R. Choi, M. H. Doan, and H. Lim. "Enhanced Luminescence of InGaN / GaN Vertical Light Emitting Diodes with an InGaN Protection Layer." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35210.

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We have investigated the effectiveness of a thin n-In0.2Ga0.8N layer inserted in the bottom n-GaN layer of InGaN/GaN blue light emitting diodes (LEDs) for the protection of multiple quantum wells during the laser lift-off process for vertical LED fabrication. The photoluminescence properties of the InGaN/GaN lateral LEDs are nearly identical irrespective of the existence of the n-In0.2Ga0.8N insertion layer in the bottom n-GaN layer. However, such an insertion is found to effectively increase the photoluminescence intensity of the multiple quantum well and the carrier lifetime of the vert

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3

Hu, Su-Kai, and 胡舒凱. "Leakage Current and Performance of Laser Lift-off LED Devices." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/86307547456689397990.

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碩士<br>國立成功大學<br>微機電系統工程研究所<br>94<br>The fabrication of the laser lift-off (LLO) GaN LED has investigated for 7~8 years, but there is no important breakthrough in light intensity and efficiency. In order to find out this reason and fabricate high brightness LED, this thesis is written. Due to the natural dislocations in the GaN epilayers and released stress after LLO process, the strong leakage current occurs. Besides, the ICP process would also cause the leakage current of sidewall. Although the leakage current would make the light intensity and efficiency of the LEDs decay, the light intensit

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4

Wu, Wen-Ying, and 吳玟穎. "Improving Laser Lift-off GaN Processes by Patterned Sapphire Substrate." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/8v3xcq.

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5

Chu, Chen-Fu, and 朱振甫. "Study of GaN Light Emitting Devices Fabricated by Laser Lift-off Technique." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/57175946587143102217.

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博士<br>國立交通大學<br>光電工程所<br>91<br>The GaN-based wide band gap semiconductors have been employed for blue light emitting diodes (LEDs) and laser diodes. These devices were grown heteroepitaxially onto dissimilar substrates such as sapphire and SiC because of difficulties in the growth of bulk GaN. However, due to the poor electrical and thermal conductivity of sapphire substrate, the device process steps are relatively complicated compared with other compound semiconductor optoelectronic devices. Therefore, fabrication of GaN-based light emitting devices on electrically and thermally conducting su

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6

Yu, Wen-Chien, and 游文謙. "Formation of Nitride Laser Diode Cavities with Cleaved Facets By Wafer-Bonding and Laser Lift-Off." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/85145511657750186359.

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碩士<br>國立交通大學<br>電子物理系所<br>95<br>Smoothly cleaved facets with high reflectivities have been demonstrated on GaN laser diodes after the devices were transferred onto GaAs substrates. The GaN based laser diode structure was first fabricated by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. Inductively coupled plasma (ICP) etch was applied to define GaN laser stripe patterns. The samples were then mounted onto thin GaAs substrates using wafer-bonding technology. Various types of bonding metals, bonding pressures, and bonding temperatures have been attempted in the

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7

Lai, Fang-I., and 賴芳儀. "Study of P-type Ohmic Contact and Laser Lift-off Technique for GaN." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/90671821824087955474.

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碩士<br>國立交通大學<br>光電工程所<br>89<br>We study the process techniques of GaN material and GaN-based device including Ohmic contact on p-GaN, Eximer laser etching and laser lift-off of GaN-based LED. For p-GaN Ohmic contact, we developed a new metallization scheme based on Ni/Pd/Au film composition. By deposition of the film on p-type GaN followed by thermal treatment in oxygen ambient at 550℃ for 5 minutes, we obtained good Ohmic characteristic with a specific contact resistivity as low as 1.1×10-4 Ω-cm2. From the SIMS measurement, we found the low specific resistance is related to the content of oxy

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8

Lee, Kun Yu, and 李昆育. "Prepared PNN-PZT thick film on silicon substrate by laser lift-off process." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/88035857568209360881.

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9

Huang, Shih-Yung, and 黃詩詠. "Fabrication of Vertical Resonant Cavity InGaN LEDs by a Laser Lift-off Technique." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/44648696273269793356.

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碩士<br>大葉大學<br>電機工程學系碩士在職專班<br>93<br>We present the state-of-the-art resonant-cavity light-emitting diode (RCLED) application to short-haul communication system on plastic optical fiber. The RCLED structure composed of an InGaN/GaN multiple-quantum-well active layer has been grown by metal organic chemical vapor deposition, between the top (5-pairs) and bottom (7.5-pairs) dielectric TiO2/SiO2 distributed Bragg reflectors with optical reflectance of 85 and 99.9%, respectively with a larger stopband of 100 nm. It was found that the emission peak (around 525 nm) of RCLED shows more stability and l

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10

Chuang, Yi-Ching, and 莊伊晴. "Improving Laser Lift-off GaN Quality by Using Wet-Etched Patterned Sapphire Substrate." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/mpj56x.

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Частини книг з теми "Laser lift-off"

1

Huang, YongAn, Zhouping Yin, and Xiaodong Wan. "Laser Lift-off." In Modeling and Application of Flexible Electronics Packaging. Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-3627-0_8.

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2

Sands, T. D., W. S. Wong, and N. W. Cheung. "Layer Transfer by Bonding and Laser Lift-Off." In Wafer Bonding. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-10827-7_11.

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3

Kim, Jaegu, and Jae-Hyun Kim. "Laser Lift-Off (LLO) Process for Micro-LED Fabrication." In Series in Display Science and Technology. Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-5505-0_3.

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4

Wang, Yan-Hsin, and Wei-Li Chen. "The Finite Element Analysis Study of the Laser Lift-Off (LLO) of III-Nitride Compound." In Intelligent Technologies and Engineering Systems. Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-6747-2_94.

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5

Wong, William S., Timothy D. Sands, and Nathan W. Cheung. "Integration of GaN Thin Films with Dissimilar Substrate Materials by Wafer Bonding and Laser Lift-Off." In III-V Nitride Semiconductors. CRC Press, 2022. http://dx.doi.org/10.1201/9780367813628-3.

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6

Parikh, Nalin R., John D. Hunn, Elliot McGucken, Max L. Swanson, C. W. White, and Ray Zuhr. "Ion implantation of diamond: damage, doping, and lift-off." In Laser and Ion Beam Modification of Materials. Elsevier, 1994. http://dx.doi.org/10.1016/b978-0-444-81994-9.50119-6.

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7

Chu, Chen-Fu, Jung-Tang Chu, Hao-Chung Kuo, and S. C. Wang. "FABRICATION OF GAN LIGHT EMITTING DIODES BY LASER LIFT-OFF TECHNIQUE." In III-Nitride Devices and Nanoengineering. PUBLISHED BY IMPERIAL COLLEGE PRESS AND DISTRIBUTED BY WORLD SCIENTIFIC PUBLISHING CO., 2008. http://dx.doi.org/10.1142/9781848162242_0005.

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8

Gillon, Steven M. "First-Term Blues." In The Pact. Oxford University PressNew York, NY, 2008. http://dx.doi.org/10.1093/oso/9780195322781.003.0007.

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Abstract Although they were clearly rising stars in their respective parties, Bill Clinton and Newt Gingrich had little direct contact before 1992. They met casually at public events in the 1980s when Clinton was in Washington lobbying on behalf of the nation’s governors, but for the most part they observed each other from a distance. “We had a distant awareness of each other,” recalled Gingrich, who remembered a brief encounter with Clinton during a national governor’s convention in 1988. The first official meeting between the two men took place on January 26, 1993, shortly after Clinton assu

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9

Rao K. Sambasiva, Jayakumar T., Sekhar A. Chandra, and Rao B. Purnachandra. "Pulsed Eddy Current Technique for Testing of Stainless Steel Plates." In Studies in Applied Electromagnetics and Mechanics. IOS Press, 2014. https://doi.org/10.3233/978-1-61499-407-7-36.

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Pulsed eddy current (PEC) technique is attractive for detection of surface defects and wall-thinning in covered electrically conductive materials. This paper discusses development of PEC technique and two different types of self-nulling probes (differential Hall sensors and Double-D differential coils) for detection of surface notches in a thick stainless steel plate. PEC testing of covered objects is attempted. In this regard, the influence of lift-off on the PEC signal due to insulation shims and thin aluminum layer is studied using the peak amplitude and the performance of the two probes is

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10

Aldridge, J. N. "Effect of Particle Inertia on the Diffusion of Small Particles in Turbulent Wall Boundary Layers." In Wind-over-Wave Couplings. Oxford University PressOxford, 1999. http://dx.doi.org/10.1093/oso/9780198501923.003.0031.

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Abstract The effect of particle inertia on small particles diffusing in a turbulent wall bounded flow is calculated. The equation for a single particle is simplified assuming the particle response time is small compared to the time scale associated with turbulent fluctuations. Continuum equations are obtained from the single particle equation by consideration of mass and momentum conservation in a control volume by the use of volume averaging. Turbulent averaging is then carried out and the resulting correlations are modelled using results borrowed from second moment turbulence clo sure theory

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Тези доповідей конференцій з теми "Laser lift-off"

1

Wang, Mingyuan, Tong Zhang, Heng Yang, Lin Chen, and Yanlei Liu. "Ultrafast laser lift-off technology for delamination of GaN layers (Erratum)." In Advanced Fiber Laser Conference (AFL2023), edited by Pu Zhou. SPIE, 2024. http://dx.doi.org/10.1117/12.3047892.

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2

Zhang, Fan, Jianxi Kang, Yingguang Zhu, Guohui Zhang, Yonglan Hu, and Changyong Pan. "Research on Laser Lift-off Process of Flexible OLED Panels for Phototherapy Application." In 2024 International Conference on Electrical Engineering and Photonics (EExPolytech). IEEE, 2024. http://dx.doi.org/10.1109/eexpolytech62224.2024.10755587.

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3

Guo, Fen, Rengang Li, Tuo Li, et al. "Study on Laser Lift-Off of GaN HEMTs Grown on Fe-doped and Unintentional Doped Buffer Layer." In 2024 9th International Conference on Integrated Circuits and Microsystems (ICICM). IEEE, 2024. https://doi.org/10.1109/icicm63644.2024.10814270.

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4

Taran, J. P. "CARS from Lift-Off to Re-Entry." In Laser Applications to Chemical Analysis. Optica Publishing Group, 1990. http://dx.doi.org/10.1364/laca.1990.mb1.

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Coherent Anti-Stokes Raman Scattering (CARS) has been particularly useful for making temperature measurements in flames. A majority of the CARS instruments is used in studies of small-scale burners, piston engines, and even furnaces and boilers of industrial size. Occasional investigations of species concentrations and rotational and vibrational temperatures in rarefied gases have also been conducted. In the area of aerospace research, one must tackle very delicate problems in all of these fields. For instance, it is particularly difficult to investigate cryogenic rocket motor combustion, hype

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5

Delmdahl, Ralph, Rainer Paetzel, Jan Brune, et al. "Line beam laser lift-off approach for sapphire removal." In ICALEO® 2012: 31st International Congress on Laser Materials Processing, Laser Microprocessing and Nanomanufacturing. Laser Institute of America, 2012. http://dx.doi.org/10.2351/1.5062551.

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6

Wang, Mingyuan, Tong Zhang, Heng Yang, Lin Chen, and Yanlei Liu. "Ultrafast laser lift-off technology for delamination of GaN layers." In Advanced Fiber Laser Conference (AFL2023), edited by Pu Zhou. SPIE, 2024. http://dx.doi.org/10.1117/12.3023706.

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7

Ersen, Ali, Eli Yablonovitch, Tom J. Gmitter, and Itzhak Schnitzer. "Integration of GaAs LEDs with silicon circuits by epitaxial lift-off." In OE/LASE'93: Optics, Electro-Optics, & Laser Applications in Science& Engineering, edited by Ray T. Chen. SPIE, 1993. http://dx.doi.org/10.1117/12.147102.

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8

Paipulas, Domas, Simas Butkus, and Valdas Sirutkaitis. "Femtosecond UV laser lift-off technique for GaN coatings." In 2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2021. http://dx.doi.org/10.1109/cleo/europe-eqec52157.2021.9541729.

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9

Mendes, Marco, Cristian Porneala, Xiangyang Song, et al. "Advanced Laser Lift Off in the Manufacturing of LEDs." In CLEO: Applications and Technology. OSA, 2015. http://dx.doi.org/10.1364/cleo_at.2015.atu1j.7.

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Paipulas, Domas, Simas Butkus, and Valdas Sirutkaitis. "Rapid delamination of GaN coatings with femtosecond laser lift-off technique." In Laser-based Micro- and Nanoprocessing XIII, edited by Udo Klotzbach, Rainer Kling, and Akira Watanabe. SPIE, 2019. http://dx.doi.org/10.1117/12.2507196.

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