Готові списки джерел за темами / Lateral heterostructures

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Добірка наукової літератури з теми "Lateral heterostructures"

Автор: Grafiati

Опубліковано: 11 січня 2025

Оновлено: 27 липня 2025

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Статті в журналах з теми "Lateral heterostructures"

Guha, Puspendu, Joon Young Park, Janghyun Jo, et al. "Molecular beam epitaxial growth of Sb₂Te₃–Bi₂Te₃ lateral heterostructures." 2D Materials 9, no. 2 (2022): 025006. http://dx.doi.org/10.1088/2053-1583/ac421a.

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Abstract We report on heteroepitaxial growth of Sb2Te3–Bi2Te3 lateral heterostructures using molecular beam epitaxy. The lateral heterostructures were fabricated by growing Bi2Te3 islands of hexagonal or triangular nanostructures with a typical size of several 100 nm and thickness of ∼15 nm on graphene substrates and Sb2Te3 laterally on the side facets of the nanostructures. Multiple-step processes with different growth temperatures were employed to grow the lateral heterostructures. Electron microscopy techniques indicate that the inner region is Bi2Te3 and the outer Sb2Te3 was formed lateral

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Zhang, Jianzhi, Hongfu Huang, Junhao Peng, et al. "A Cost-Effective Long-Wave Infrared Detector Material Based on Graphene@PtSe2/HfSe2 Bidirectional Heterostructure: A First-Principles Study." Crystals 12, no. 9 (2022): 1244. http://dx.doi.org/10.3390/cryst12091244.

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The Graphene@PtSe2 heterostructure is an excellent long-wave infrared detection material. However, the expensive cost of PtSe2 prevents its widespread use in infrared detection. In this paper, Hf was used to partially replace Pt to form Graphene@(PtSe2)n(HfSe2)4−n (n = 1, 2, and 3) bidirectional heterostructures consisting of graphene and lateral PtSe2/HfSe2 composites based on first-principles calculations. Then, the new bidirectional heterostructures were compared with heterostructures formed by graphene with pure MSe2 (M = Pt, Hf). It was found that the band gaps of the bidirectional hetero

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Wan, Li-Kai, Yi-Xuan Xue, Jin-Wu Jiang, and Harold S. Park. "Machine learning accelerated search of the strongest graphene/h-BN interface with designed fracture properties." Journal of Applied Physics 133, no. 2 (2023): 024302. http://dx.doi.org/10.1063/5.0131576.

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Two-dimensional lateral heterostructures exhibit novel electronic and optical properties that are induced by their in-plane interface for which the mechanical properties of the interface are important for the stability of the lateral heterostructure. Therefore, we performed molecular dynamics simulations and developed a convolutional neural network-based machine learning model to study the fracture properties of the interface in a graphene/hexagonal boron nitride lateral heterostructure. The molecular dynamics (MD) simulations show that the shape of the interface can cause an 80% difference in

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Liu, Xiaolong, and Mark C. Hersam. "Borophene-graphene heterostructures." Science Advances 5, no. 10 (2019): eaax6444. http://dx.doi.org/10.1126/sciadv.aax6444.

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Integration of dissimilar two-dimensional (2D) materials is essential for nanoelectronic applications. Compared to vertical stacking, covalent lateral stitching requires bottom-up synthesis, resulting in rare realizations of 2D lateral heterostructures. Because of its polymorphism and diverse bonding geometries, borophene is a promising candidate for 2D heterostructures, although suitable synthesis conditions have not yet been demonstrated. Here, we report lateral and vertical integration of borophene with graphene. Topographic and spatially resolved spectroscopic measurements reveal nearly at

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Малевская, А. В., Н. Д. Ильинская та В. М. Андреев. "Разработка методов жидкостного травления разделительной меза-структуры при создании каскадных солнечных элементов". Письма в журнал технической физики 45, № 24 (2019): 14. http://dx.doi.org/10.21883/pjtf.2019.24.48795.17953.

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Investigation of the post-growth technique for fabricating multijunction solar sells based on the GaInP/GaAs/Ge heterostructure has been carried out. Investigated were methods of liquid chemical and electro-chemical etching of heterostructure layers. Technology for creating the separation mesa-structure has been developed. The improvement of the surface quality and of the profile of the mesa lateral side for heterostructures of different layer content has been achieved.

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Давыдов, С. Ю. "Простые модели латеральных гетероструктур". Физика твердого тела 60, № 7 (2018): 1389. http://dx.doi.org/10.21883/ftt.2018.07.46129.015.

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AbstractGeneral analytical expressions for densities of states of a lateral heterostructure, formed by the contact of two square semi-infinite lattices with single-band and two-band spectra, were obtained in the tight-binding approximation by the Green’s function method. The semi-elliptical density of states was used for numerical estimates, and the model of two interacting dimers was proposed to estimate the charge transfer. Application of this approach to description of lateral epitaxial and graphene-like heterostructures is discussed.

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Li, Xufan, Ming-Wei Lin, Junhao Lin, et al. "Two-dimensional GaSe/MoSe2misfit bilayer heterojunctions by van der Waals epitaxy." Science Advances 2, no. 4 (2016): e1501882. http://dx.doi.org/10.1126/sciadv.1501882.

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Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stack

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Wang, Zixuan, Wenshuo Xu, Benxuan Li, et al. "Selective Chemical Vapor Deposition Growth of WS2/MoS2 Vertical and Lateral Heterostructures on Gold Foils." Nanomaterials 12, no. 10 (2022): 1696. http://dx.doi.org/10.3390/nano12101696.

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Vertical and lateral heterostructures consisting of atomically layered two-dimensional (2D) materials exhibit intriguing properties, such as efficient charge/energy transfer, high photoresponsivity, and enhanced photocatalytic activities. However, the controlled fabrication of vertical or lateral heterojunctions on metal substrates remains challenging. Herein, we report a facile and controllable method for selective growth of WS2/MoS2 vertical or lateral heterojunctions on polycrystalline gold (Au) foil by tuning the gas flow rate of hydrogen (H2). We find that lateral growth is favored withou

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Davydov, S. Yu. "Simple Models of Lateral Heterostructures." Physics of the Solid State 60, no. 7 (2018): 1405–12. http://dx.doi.org/10.1134/s1063783418070089.

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Alharbi, Safia Abdullah R., Kazi Jannatul Tasnim, and Ming Yu. "The first-principles study of structural and electronic properties of two-dimensional SiC/GeC lateral polar heterostructures." Journal of Applied Physics 132, no. 18 (2022): 184301. http://dx.doi.org/10.1063/5.0127579.

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Two-dimensional (2D) lateral polar heterostructures, constructed by seamlessly stitching 2D polar materials, exhibit unique properties triggered by the in-plane charge transfer between different elements in each domain. Our first-principles study of 2D SiC/GeC lateral polar heterostructures has unraveled their interesting characteristics. The local strain induced by a lattice mismatch leads to an artificial uniaxial strain along the interface. The synergistic effect of such uniaxial strain, the microstructure of interface, and the width of domains modulates the feature of the bandgap with an i

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Дисертації з теми "Lateral heterostructures"

Vallis, Stuart Lawrie. "Lateral and longitudinal surface superlattices on shallow GaAs heterostructures." Thesis, University of Glasgow, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.320844.

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Lai, Andrew P. (Andrew Pan). "Investigation of lateral gated quantum devices in Si/SiGe heterostructures." Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/83775.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Physics, 2013.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 73-75).<br>Quantum dots in Si/SiGe have long spin decoherence times, due to the low density of nuclear spins and weak coupling between nuclear and electronic spins. Because of this, they are excellent candidates for use as solid state qubits. The initial approach towards creating controllable Si/SiGe quantum dots was to fabricate them in delta doped heterostructures. We provide evidence that the delta doping layer in these heterost

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Deborde, Jean-Laurent. "Lateral electron tunneling spectroscopy between low-dimensional electron systems in GaAs,AlGaAs heterostructures." Tönning Lübeck Marburg Der Andere Verl, 2009. http://d-nb.info/995773491/04.

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Maharjan, Nikesh. "Electronic band engineering of Transition metal dichalcogenides: First Principles Calculation." OpenSIUC, 2015. https://opensiuc.lib.siu.edu/theses/1661.

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Based on first principles Density Functional Theory calculations, we have investigated for possible paths for engineering electronic band structure of Transition Metal Dichalco- genides (TMDs). We have considered two approaches which have shown to be promising for engineering electronic bands of TMDs: substitutional chemical doping and heterostruc- turing. All the calculations are done using first principles Density Functional Theory as it is implemented in Quantum Espresso package. Two possible substitutional doping meth- ods for MoS2 are considered in our calculations; cation doping where Mo

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Graf, Davy. "Electrons in reduced dimensions : from finite lateral superlattices in AlGaAs heterostructures to few-layer graphene /." Zürich : ETH, 2007. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=17241.

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Bradford, Jonathan. "Growth and characterisation of two-dimensional materials and their heterostructures on sic." Thesis, Queensland University of Technology, 2019. https://eprints.qut.edu.au/134400/1/Jonathan_Bradford_Thesis.pdf.

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Atomically thin two-dimensional materials and their hybrids represent an elegant approach to designing and synthesizing functional nanomaterials and are expected to find applications across a broad range of new technologies. This project explored scalable synthesis of various two-dimensional layered materials and their hybrid counterparts on silicon carbide, an industrially relevant device substrate. It demonstrates the integration of graphene, hexagonal boron nitride and transition metal dichalcogenide layers which were characterised by high resolution scanning probe microscopy and electron s

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Serrano, richaud Elisa. "Modelling electronic and optical properties of 2D heterostructures." Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPASP121.

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Le graphène (Gr) et le nitrure de bore hexagonal (hBN) ont un paramètre de réseau similaire (décalage de ~1,5 %) et des propriétés différentes : le Gr est un métal connu pour sa conductivité élevée et le hBN est un isolant à grand écart (~6eV) avec une forte émission d'UV. En raison de ces deux remarques, ils sont des candidats parfaits pour être empilés côte à côte dans une hétérostructure latérale au lieu d'être empilés l'un sur l'autre dans une hétérostructure verticale plus courante. Dans cette thèse, je m'intéresserai à la modélisation des propriétés électroniques et optiques des hétérost

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Soucail, Bernard. "Contributions a l'etude des changements de dimensionnalite induits par des champs exterieurs ou par un confinement lateral dans les heterostructures de semiconducteurs iii-v." Paris 6, 1990. http://www.theses.fr/1990PA066693.

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Nos travaux recents ont montre l'interet des superreseaux de semiconducteurs pour etudier le mouvement des electrons dans une structure periodique en presence de champ electrique. En effet, contrairement aux materiaux massifs, les superreseaux ont des parametres structuraux (periode, largeur de bande electronique) qui permettent une observation des phenomenes prevus theoriquement en appliquant des champs electriques relativement faibles: les etats propres devienne localises (echelle de wannier-stark), ce qui se manifeste par un decalage vers le bleu du seuil d'absorption du superreseau. L'adjo

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Lee, Sunyoung. "Distributed effects in power transistors and the optimization of the layouts of AlGaN/GaN HFETs." Columbus, Ohio : Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1149095133.

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Piotrowicz, Pawel Jan Andrzej. "Fabrication and measurement of laterally confined double barrier heterostructures with wide wells." Thesis, University of Cambridge, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627421.

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Книги з теми "Lateral heterostructures"

Horing, Norman J. Morgenstern. Retarded Green’s Functions. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198791942.003.0005.

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Chapter 5 introduces single-particle retarded Green’s functions, which provide the probability amplitude that a particle created at (x, t) is later annihilated at (x′,t′). Partial Green’s functions, which represent the time development of one (or a few) state(s) that may be understood as localized but are in interaction with a continuum of states, are discussed and applied to chemisorption. Introductions are also made to the Dyson integral equation, T-matrix and the Dirac delta-function potential, with the latter applied to random impurity scattering. The retarded Green’s function in the prese

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Частини книг з теми "Lateral heterostructures"

Lima, A. P., C. Miskys, O. Ambacher, et al. "AlGaN/GaN lateral polarity heterostructures." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_139.

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Wu, Yuh-Renn, Madhusudan Singh, and Jasprit Singh. "Lateral and Vertical Charge Transport in Polar Nitride Heterostructures." In Polarization Effects in Semiconductors. Springer US, 2008. http://dx.doi.org/10.1007/978-0-387-68319-5_3.

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Jeschke, Sabina, Olivier Pfeiffer, Joerg Schulze, and Marc Wilke. "Crystalline Ge1−x Sn x Heterostructures in Lateral High-Speed Devices." In Automation, Communication and Cybernetics in Science and Engineering 2009/2010. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-16208-4_52.

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Kurtz, E., M. Schmidt, B. Dal Don, et al. "Properties of CdSe/ZnSe based quantum heterostructures with and without lateral confinement potentials." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_181.

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Heinecke, Harald. "Concepts for Lateral III–V Heterostructures Fabricated by Surface Selective Growth in MOMBE." In Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates. Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0341-1_21.

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Zytkiewicz, Z. R., and D. Dobosz. "Influence of Si Doping on Epitaxial Lateral Overgrowth of GaAs." In Heterostructure Epitaxy and Devices — HEAD’97. Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5012-5_9.

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Mimila-Arroyo, J., and K. Somogyi. "Optical Gain Improvement of GaAs Lateral Photoresistive Elements by Sulphur Passivation of the Surface." In Heterostructure Epitaxy and Devices — HEAD’97. Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5012-5_48.

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Brinkop, F., C. Dahl, J. P. Kotthaus, G. Weimann, and W. Schlapp. "Microwave Conductivity of Laterally Confined Electron Systems in AlGaAs/GaAs Heterostructures." In Springer Series in Solid-State Sciences. Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84408-9_51.

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Bakhtatou, Ali, and Ali Hamidani. "Design of a New Photo-Diode Based on (α-PbO)/(α-SnO) Lateral Heterostructure." In Springer Proceedings in Materials. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-97-1916-7_14.

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Tagawa, Tomoya, and Shin-ichi Katayama. "Plasmons in laterally density modulated 2D electron gas in shallow etched single-heterostructures." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_225.

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Тези доповідей конференцій з теми "Lateral heterostructures"

Adibi, Ali, and Hossein Taghinejad. "Free-form lateral heterostructures in two-dimensional transition metal chalcogenides." In Quantum Sensing and Nano Electronics and Photonics XXI, edited by Manijeh Razeghi, Giti A. Khodaparast, and Miriam S. Vitiello. SPIE, 2025. https://doi.org/10.1117/12.3053009.

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Zhong, Yutong, Hanyuan Ma, Qian Lv, et al. "Low-voltage Injection-free Electroluminescence Device based on a Monolayer MoSe2/WSe2 Lateral Heterostructure." In CLEO: Science and Innovations. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_si.2024.sf2r.5.

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We demonstrate an injection-free electroluminescence device fabricated with a CVD-grown monolayer MoSe2/WSe2 lateral heterostructure. The device is based on impact generation of excitons through an alternating voltage as low as ±1 V at room temperature.

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Malhotra, Yakshita, Yifan Shen, Yuanpeng Wu, et al. "Carrier Transfer From C-Plane to Semipolar-Plane Regions in a Red-Emitting InGaN/GaN Heterostructure." In CLEO: Applications and Technology. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.jtu2a.126.

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Temperature and power dependent time-resolved photoluminescence measurements are performed on a novel ultra-stable red-emitting InGaN/GaN heterostructure. PL dynamics at two distinct wavelengths indicate a lateral carrier transfer from c-plane to semipolar-plane InGaN in the structure.

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Taghinejad, Hossein, and Ali Adibi. "Ultra-miniaturized lateral heterostructures in 2D semiconductors." In Active Photonic Platforms XIII, edited by Ganapathi S. Subramania and Stavroula Foteinopoulou. SPIE, 2021. http://dx.doi.org/10.1117/12.2593849.

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Marian, D., E. Dib, T. Cusati, A. Fortunelli, G. Iannaccone, and G. Fiori. "Two-dimensional transistors based on MoS2 lateral heterostructures." In 2016 IEEE International Electron Devices Meeting (IEDM). IEEE, 2016. http://dx.doi.org/10.1109/iedm.2016.7838413.

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Voronine, Dmitri V., and Sharad Ambardar. "Nanophotonics of coupled emitters in atomically thin lateral heterostructures." In Active Photonic Platforms XII, edited by Ganapathi S. Subramania and Stavroula Foteinopoulou. SPIE, 2020. http://dx.doi.org/10.1117/12.2569073.

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Jeschke, Sabina, Olivier Pfeiffer, Joerg Schulze, and Marc Wilke. "Crystalline Ge1-xSnx Heterostructures in Lateral High-Speed Devices." In 2010 Fourth International Conference on Quantum, Nano and Micro Technologies (ICQNM). IEEE, 2010. http://dx.doi.org/10.1109/icqnm.2010.17.

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Fontein, P. F., P. Hendriks, J. Wolter, A. Kucernak, R. Peat, and D. E. Williams. "Topography Of GaAs/AlgaAs Heterostructures Using The Lateral Photo Effect." In 1988 International Congress on Optical Science and Engineering. SPIE, 1989. http://dx.doi.org/10.1117/12.950344.

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Horst, S., S. W. Koch, G. Blume, et al. "Strong Lateral Confinement in Ga(AsSb)/GaAs/(AlGa)As Heterostructures." In CLEO '07. 2007 Conference on Lasers and Electro-Optics. IEEE, 2007. http://dx.doi.org/10.1109/cleo.2007.4452599.

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Olbrich, P., R. Ravash, T. Feil, et al. "Terahertz photocurrents in heterostructures with one-dimensional lateral periodic potential." In 2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2008). IEEE, 2008. http://dx.doi.org/10.1109/icimw.2008.4665696.

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Звіти організацій з теми "Lateral heterostructures"

Tsui, D. C. Electronic Processes in Heterostructures, Strained-Layer Materials, and Laterally Patterned Structures. Defense Technical Information Center, 1994. http://dx.doi.org/10.21236/ada294970.

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