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Статті в журналах з теми "MOM capacitors":
Omran, Hesham, Hamzah Alahmadi, and Khaled N. Salama. "Matching Properties of Femtofarad and Sub-Femtofarad MOM Capacitors." IEEE Transactions on Circuits and Systems I: Regular Papers 63, no. 6 (June 2016): 763–72. http://dx.doi.org/10.1109/tcsi.2016.2537824.
Park, Kwangwon, and Sanggeun Jeon. "Design of Metal-Oxide-Metal Capacitors in a 65-nm CMOS Process." Journal of Korean Institute of Electromagnetic Engineering and Science 30, no. 10 (October 2019): 846–49. http://dx.doi.org/10.5515/kjkiees.2019.30.10.846.
Hernandez Herrera, H. D., M. Bregant, B. Sanchez, and W. Van Noije. "Onchip digital calibrated 2 mW 12-bit 25 MS/s SAR ADC with reduced input capacitance." Journal of Instrumentation 17, no. 04 (April 1, 2022): C04013. http://dx.doi.org/10.1088/1748-0221/17/04/c04013.
Jeyaraman, Sathyasree, Venkata Narayana Rao Vanukuru, Deleep Nair, and Anjan Chakravorty. "Modeling of High-Q Conical Inductors and MOM Capacitors for Millimeter- Wave Applications." IEEE Transactions on Electron Devices 67, no. 12 (December 2020): 5646–52. http://dx.doi.org/10.1109/ted.2020.3029236.
Chou, Pang-Yen, Nai-Chen Chen, Mark Po-Hung Lin, and Helmut Graeb. "Matched-Routing Common-Centroid 3-D MOM Capacitors for Low-Power Data Converters." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25, no. 8 (August 2017): 2234–47. http://dx.doi.org/10.1109/tvlsi.2017.2687980.
Chen, Chixiao, Jixuan Xiang, Huabin Chen, Jun Xu, Fan Ye, Ning Li, and Junyan Ren. "A capacitive DAC with custom 3-D 1-fF MOM unit capacitors optimized for fast-settling routing in high speed SAR ADCs." Journal of Semiconductors 36, no. 5 (May 2015): 055011. http://dx.doi.org/10.1088/1674-4926/36/5/055011.
Zulkifeli, M. A., S. N. Sabki, S. Taking, N. A. Azmi, and S. S. Jamuar. "The Effect of Different Dielectric Materials in Designing High-Performance Metal-Insulator-Metal (MIM) Capacitors." International Journal of Electrical and Computer Engineering (IJECE) 7, no. 3 (June 1, 2017): 1554. http://dx.doi.org/10.11591/ijece.v7i3.pp1554-1561.
Xu, Hui, Li Feng Zhang, Qiu Xiang Zhang, Shi Jin Ding, and David Wei Zhang. "Comparison of Reactively Sputtered HfO2 and HfSixOy Dielectrics for High Density Metal-Insulator-Metal Capacitor Applications." Advanced Materials Research 284-286 (July 2011): 893–99. http://dx.doi.org/10.4028/www.scientific.net/amr.284-286.893.
Feng, Wu Shiung, and Yi Jung Chen. "Evaluation of Silicon Nitride MIM Capacitors for MMIC Applications." Applied Mechanics and Materials 397-400 (September 2013): 1873–77. http://dx.doi.org/10.4028/www.scientific.net/amm.397-400.1873.
Patil, Sumit, Viral Barhate, Ashok Mahajan, Haoyu Xu, Mohammad Rasadujjaman, and Jing Zhang. "Investigation of electrical properties of peald-deposited Ti/Al2O3/Al/Si MIM capacitors." International Journal of Modern Physics B 35, no. 14n16 (June 19, 2021): 2140045. http://dx.doi.org/10.1142/s0217979221400452.
Дисертації з теми "MOM capacitors":
Orozco, montes Maileth. "Implémentation d'un générateur de nanoparticules en phase gazeuse fondé sur la pulvérisation cathodique magnétron pour la synthèse de films minces nanocomposities céramique/nanoparticules métalliques." Thesis, Limoges, 2017. http://www.theses.fr/2017LIMO0082/document.
This thesis is dedicated to the study of free nanoparticles (NPs) source based on magnetron sputtering. Setting up an optical emission spectrometer and a quartz microbalance allowed to observe the influence of the process parameters (gas composition and flow rate, cathodic current, magnetic configuration) on the plasma species and the NPs deposition rate. This lead to a better understanding of the process and the establishment of a process operating windows. Transmission Electron Microscopy (TEM) analysis revealed crystallized silver NPs whose size increased (from 2.5 ± 0.5 nm to 5.2 ± 0.5 nm in diameter) when the aggregation length increased. The free NPs source coupled to a conventional magnetron sputtering chamber allowed the deposition of nanocomposites thin films consisting of metallic NPs (Cu ou Ag) embedded in dielectric transparent amorphous matrix (aluminum nitride or oxide). A red shift of the Surface Plasmon Resonance (SPR) was observed with the increase of the matrix permittivity value. A broadening of the SPR with the decrease of the NPs size was also evidenced. Finally, the electrical properties of the nanocomposites have been studied by means of a Metal/Insulator/Metal capacitor pointing out a modulation of the permittivity with the silver NPs content (5% and 10% vol.)
Quémerais, Thomas. "Conception et étude de la fiabilité des amplificateurs de puissance fonctionnant aux fréquences millimétriques en technologies CMOS avancées." Grenoble INPG, 2010. http://www.theses.fr/2010INPG0158.
With the emergence of millimeter-wave applications such as automotive radar or WHDMI, the reliability became a very important issue for the industry. In a radio transceiver, the main reliability problems concern the MOS transistors used in the power amplifiers, due to the high power level. These devices are subject to deterioration by the hot carrier phenomenon. This impacts heavily the power amplifiers performances. This thesis work concerns the design and the study of the reliability of millimeter-wave power amplifiers in advanced CMOS technologies. The manuscript is divided into four chapters. The two first one concern the study, the design, the modeling and the characterization of integrated active and passive elements on silicon and used into power amplifiers at millimeter wave frequencies. The third chapter describes the three power amplifiers designed and realized for reliability tests. The final chapter provides a comprehensive study of the reliability of these circuits to calculate their lifetime
Miao, Bing. "Hafnium based MIM capacitors for hostile environments." Thesis, University of Newcastle Upon Tyne, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.506721.
Wakrim, Tariq. "Commutation de capacitance dans les mémoires résistives (ReRAM), application aux mémoires d’impédance (ZRAM ou mem-capacitors)." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT085/document.
Resistive random access memories (ReRAM) hold great potential for replacing Flash memories. A ReRAM memory (or MEMRISTOR) uses a resistive switching phenomenon found in Metal-Insulator-Metal (MIM) structures under a voltage stress. Most researches were focused on the mechanisms governing the resistance switching in ReRAM devices and less attention has been paid to capacitance variation of MIM structures under a voltage stress. Our work is focused on that latter phenomenon. We study impedance variation (conductance and capacitance in the RF domain) in HfO2-based MIM structures. Above a threshold voltage (Set), concurrently to conductance increase, a decrease in the capacitance value is observed. Reproducible capacitance-voltage (C-V) and conductance-voltage (G-V) memory cycles are obtained. Frequency dependent characterizations (C-f and G-f), under different DC bias voltages, are performed with the aim of understanding the mechanisms of impedance switching. The capacitance decrease observed in the conducting (ON) state is attributed to the inductance of the filament created during the Set stage. Transport phenomena responsible for the filament inductive behavior are discussed. Impact of HfO2 deposition process (ALD), as well as the use of bi-layer structures, on C-V and G-V characteristics are shown. This work paves the way for the realization of new capacitance memory devices (mem-capacitors) and most generally for impedance memories (ZRAM). Potential of these devices to design reconfigurable filters (controlled by voltage bias) is demonstrated in a practical way
Do, Ky Hien Carleton University Dissertation Engineering Electrical. "Fabrication and characterization of microwave thin-film mim capacitors." Ottawa, 1991.
Ayöz, Suat. "High-frequency optimisation and modelling of RF MEM variable capacitors." Thesis, University of Cambridge, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608913.
Aydogdu, Birsu. "Comparison Of Sorption Capacities On Different Samples Of Mcm-41." Master's thesis, METU, 2013. http://etd.lib.metu.edu.tr/upload/12615610/index.pdf.
CEL Co-Supervisor: Prof. Dr. Gü
rkan KARAKAS January 2013, 69 pages MCM-41(Mobil Composition Matter-41) is one of the three members of M41S family and has a highly ordered hexagonal honeycomb like structure with a narrow pore size distribution in mesopore range, high surface area, high pore volume and high thermal stability. These features make MCM-41 proper to use for adsorption, catalysis, ion exchange and separation processes. . In this study sorption capacities of C8 aromatics (o-, m-, p-xylene and ethylbenzene at 30 °
C, 50 °
C and 65 °
C) on a MCM-41 sample synthesized in our laboratory were determined gravimetrically by using a commercial automated electro balance system and compared with results obtained in a previous and similar MSc thesis study with a sample of different origin and characteristics
specifically low BET surface area (492 m2/g). MCM-41 sample was synthesized by hydrothermal synthesis method with cetyltrimethylammoniumbromide (CTAMBr as surfactant) and tetraethyl ortosilicate (TEOS as silica source) in basic conditions. This MCM-41 sample was calcined at 540 oC for 8 h and characterized by XRD, nitrogen adsorption at 77 K, TGA, TEM, SEM and SEM-EDX. According to XRD data, main characteristic peak for synthesized MCM-41 was obtained at 2&theta
=2.28°
. Three small reflection peaks can be seen at 2&theta
values of 2.59, 4.27°
and 4.5°
. XRD pattern of the MCM-41, indicated that the desired structure of MCM-41 was successfully synthesized. Surface area, pore volume and average pore diameter were obtained from the nitrogen adsorption data at 77 K as 1154 m2/g, 1.306 cm3/g and 2.75 nm respectively. TGA analysis showed that the 540 oC is proper for the calcination. SEM -EDX analysis gave an oxygen atomic concentration 66.40% and silicon atomic concentration 33.60%. These results showed that the chemical composition of the synthesize material was in almost pure SiO2 form. The adsorbed amount for all isomers at the same pressure decreased as the temperature of the adsorption isotherms increases as expected for physical adsorption. Nitrogen adsorption of MCM-41 in this study showed type IV isotherm with H2 type hysteresis loop according the IUPAC classification. However, for o-,m-, and p-xylene an approximately linear increase in the adsorbed amount as a function of relative pressure was observed from the adsorption isotherms. Except for adsorption isotherms of m-xylene and p-xylene at 65 oC all isotherms of xylenes showed hysteresis loops. Hysteresis loops narrowed down with increasing temperature. p-xylene and m-xylene adsorption isotherms at 65 oC were reversible and did not show any hysteresis loop. Ethylbenzene adsorption isotherms at 30 oC, 50 °
C and 65 oC also showed a linear increase in the adsorption amount as a function of relative pressure like xylenes. At 50 °
C and 65 oC adsorption isotherms of ethylbenzene were reversible without a hysteresis loop. For all adsorbates volume of adsorbed amounts were calculated on the assumption that they exist as saturated liquids at the isotherm temperature and found to be significantly lower than pore volume obtained from nitrogen adsorption isotherm at 77K. Sorption capacities of these hydrocarbons on MCM-41 were also very low when compared to values found in a previous study which involved a MCM-41 sample of significantly lower surface area ( 492 m2/g ). This may be attributed to structure degradation which requires further investigation.
YESMIN, Panecatl Bernal. "Síntese e caracterização do material mesoporoso MCM-41 para o desenvolvimento de capacitores MOS." Universidade Federal de Pernambuco, 2015. https://repositorio.ufpe.br/handle/123456789/15471.
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CAPES
CNPq
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Neste trabalho, apresentamos a síntese e caracterização do material mesoporoso MCM-41 para o desenvolvimento de capacitores MOS. A motivação deste trabalho deve-se às propriedades interessantes que MCM-41 apresenta, tais como: área superficial e volume de poro grande e estrutura ordenada de poros. Inicialmente apresentamos a síntese do material mesoporoso MCM-41 pelo método Sol-Gel, e sua caracterização estrutural (DRX e IV), morfológica (MEV e TEM) e texturais (Análise de Adsorção e Dessorção de Nitrogênio), e fazemos uma comparação de resultados com o mesmo material produzido pela Sigma-Aldrich. Também foram obtidos filmes pelo método químico, que foram caracterizados por MEV e DRX e em seguida foram fabricados capacitores MOS. As medidas elétricas do capacitor MOS com dielétrico de MCM-41 foram comparadas com capacitores com dielétrico de SiO2 térmico. Os resultados mostraram uma clara diferença nas curvas de Corrente-Tensão. Conclui-se que a água confinada dentro do filme dielétrico é associada com os valores elevada de capacitância por unidade de área, estes valores permanecem altos depois do aquecimento, indicando que a resposta dielétrica é devida á água ligada ao material dielétrico, formando camadas paralelas á superfície do substrato. Capacitores de MCM-41 foram expostos a vários solventes polares e apolares, assim como á radiação gama e apresentaram distorção na resposta da capacitância e deslocamento nas curvas de corrente – tensão. Finalmente, capacitores de MCM-41 foram hidrolisados com o objetivo de aumentar a concentração dos grupos silanol na superfície do MCM-41 e como consequência alterar a capacitância do dispositivo.
In this work, we report the synthesis and characterization of MCM-41 mesoporous material for the development of devices types MOS capacitors. The motivation of this work is due to the MCM-41 interesting properties such as: surface area and pore volume large and pore ordered structure. Initially, we present a synthesis of MCM-41 mesoporous material by sol-gel method and their structural characterization (XRD and IR), morphological (SEM and TEM) and texture (Nitrogen Desorption and Adsorption Analysis) and make a comparison with the same material produced by Sigma. Also, films were obtained by chemical method, which were characterized by SEM and XRD, and then MOS capacitors were fabricated. The electrical characteristics MCM-4 MOS capacitors were compared with thermal SiO2, the results showing a clear difference in the voltage-current curves. It concludes that water confined within the dielectric film is associated with high values of capacitance per unit area these values remain high even after heating, indicating a dielectric response due to water strongly bonded to the dielectric material forming layers parallel to the substrate surface. The MCM-41 capacitors were exposed to various polar and nonpolar solvents and gamma radiation and showed good results were due to variations in the response to capacitance and the voltage-current curves showed displacement and distortion. Finally, the MCM-41 capacitors were hydrolyzed in order to be able to increase the concentration of silanol groups on the surface of MCM-41; as a consequence the material is more sensitive to moisture and therefore, the capacitance of the device response.
Guiller, Olivier. "Intégration de capacités verticales débouchantes au sein d'un interposeur silicium." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT021/document.
Integrated circuits density never stopped rising since the discovery of the transistor in 1947, through components size shrinking. However, this miniaturization now encounters barriers and reduction of transistor’s gate size alone no longer allows integrated circuits overall performances increase. Therefore, microelectronic industry turned to new heterogeneous integration solutions aiming to develop the diversification of functionalities offered by the circuits. Among these solutions, 3D integration involving stacking several silicon dies on top of each other with the help of Through Silicon Vias (TSV) appears to be promising. Nevertheless, such structures will take times to reach maturity since they require the evolution of the whole industrial ecosystem. A transitional solution in term of technological maturity lies in the use of the interposer: a thinned substrate placed between the high density silicon dies and the Ball Grid Array acting as an integration platform allowing side by side placement of heterogeneous dies as well as high density interconnections. However, the addition of the interposer in the system leads to the increase of the Power Delivery Network impedance. The integration of a decoupling capacitor on the interposer resolves this issue by ensuring power integrity within 3D structures.The objective of this PhD thesis consists in the study of different aspects of a new kind of integrated capacitor within the silicon interposer. This 3D Metal-Insulator-Metal (MIM) capacitor has the particularity to cross over the whole silicon interposer’s thickness and to be co-integrated with TSV.The first step of this new integrated component study has been the definition of an efficient architecture, achieved through a modeling study allowing the influence evaluation of the numerous geometrical and material parameters coming into play. This modeling study pointed out the low ESR and ESL values achievable by the structure (in the m and fH range respectively). Then, the fabrication of the capacitor required the development of innovative process steps allowing the deposition of a MIM stack in deep vias matrices as well as co-integration with TSV. Finally, component performances have been evaluated through the fabrication of a test demonstrator as well as a finites elements electromagnetic simulation campaign. A capacitance density of 20 nF.mm-2 has been reached on this demonstrator, showing an increase up to a factor 6 compared to a planar structure
Ferrand, Julien. "Stabilisation en phase quadratique de zircone déposée par PEALD : application aux capacités MIM." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAI065/document.
For more than ten years Metal-Insulator-Metal capacitors (MIM) have been integrated at the level of copper interconnections. All new technology nodes have led to a decrease of the surface of chips; capacitance density must be thus enhanced. The best solution is to use a material with a high dielectric constant commonly named “high-k”. For the next MIM capacitor generation, capacitance density has to be higher than 30 fF/µm². Tantalum oxide, currently used, has reached its limits and it must be replaced. Zirconium dioxide has a high dielectric constant of 47 in the tetragonal phase with a sufficient band gap for MIM applications. When deposited in thin films, zirconia is not fully crystalized in the tetragonal phase. Moreover, this pure zirconium oxide does not fulfill the reliability criteria. The aim of this work is to stabilize zirconia in its tetragonal phase by alloying it with other elements. Tantalum and Germanium are the two dopants selected thanks to a bibliographic study. Thin layers of zirconia of 8 nm alloyed with Tantalum and Germanium have been deposited by Plasma Enhanced Atomic Layer Deposition (PEALD). Samples were annealed at 400°C during 30 minutes after deposition to reproduce the thermal conditions that microelectronic chips are submitted to. Different characterization technics have been used to study the effect of dopants on zirconia's crystalline structure and its physic-chemical properties. Tests have been made on integrated MIM capacitors with Titanium Nitride electrodes to determine the electrical properties of the layers. Reliability of zirconia doped layers was also evaluated. The purpose of this work is the production of zirconia based planar MIM capacitor with a capacitance density of 30 fF/µm²
Книги з теми "MOM capacitors":
Samuels, Richard. Massive Modularity. Edited by Eric Margolis, Richard Samuels, and Stephen P. Stich. Oxford University Press, 2012. http://dx.doi.org/10.1093/oxfordhb/9780195309799.013.0004.
Частини книг з теми "MOM capacitors":
Padmanabhan, Revathy, Navakanta Bhat, and S. Mohan. "Room Temperature-Processed TiO2 MIM Capacitors for DRAM Applications." In Physics of Semiconductor Devices, 37–39. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_10.
Mukherjee, K., S. Upreti, A. Bag, S. Mallik, M. Palit, S. Chattopadhyay, and C. K. Maiti. "Resistive Switching in MIM Capacitors Using Porous Anodic Alumina." In Physics of Semiconductor Devices, 29–32. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_8.
Koul, Shiban Kishen, and Sukomal Dey. "DMTL Phase Shifter Design Using MAM Capacitors and a MEMS Bridge." In Radio Frequency Micromachined Switches, Switching Networks, and Phase Shifters, 117–30. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2019]: CRC Press, 2019. http://dx.doi.org/10.1201/9781351021340-7.
Richard, Claire Therese, D. Benoit, S. Cremer, L. Dubost, B. Iteprat, M. Vincent, E. De Bock, et al. "Wet Process Developments for Electrical Properties Improvement Of 3D MIM Capacitors." In Solid State Phenomena, 379–82. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-46-9.379.
Smetana, W. "Buried Thick Film Capacitors Built Up with High-K Dielectrics for MCM-Applications." In MCM C/Mixed Technologies and Thick Film Sensors, 227–37. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0079-3_24.
Unbehauen, Rolf, and Andrzej Cichocki. "Basic Properties and Systematic Analysis of Switched-Capacitor Networks." In MOS Switched-Capacitor and Continuous-Time Integrated Circuits and Systems, 172–254. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83677-0_3.
Unbehauen, Rolf, and Andrzej Cichocki. "Fundamentals of Sampled-Data Systems." In MOS Switched-Capacitor and Continuous-Time Integrated Circuits and Systems, 1–82. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83677-0_1.
Unbehauen, Rolf, and Andrzej Cichocki. "MOS Devices for Linear Analog Integrated Circuits." In MOS Switched-Capacitor and Continuous-Time Integrated Circuits and Systems, 83–171. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83677-0_2.
Unbehauen, Rolf, and Andrzej Cichocki. "Basic Building Blocks of Linear SC Networks." In MOS Switched-Capacitor and Continuous-Time Integrated Circuits and Systems, 255–325. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83677-0_4.
Unbehauen, Rolf, and Andrzej Cichocki. "Synthesis and Design of SC Filters." In MOS Switched-Capacitor and Continuous-Time Integrated Circuits and Systems, 326–444. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83677-0_5.
Тези доповідей конференцій з теми "MOM capacitors":
Wang, Lynn T. "Process variation in metal-oxide-metal (MOM) capacitors." In SPIE Advanced Lithography, edited by Vivek K. Singh and Michael L. Rieger. SPIE, 2008. http://dx.doi.org/10.1117/12.773197.
Shi, Jinglin, A. Sidelnicov, Kok Wai J. Chew, Mei See Chin, C. Schippel, J. M. M. dos Santos, F. Schlaphof, L. Meinshausen, John R. Long, and D. L. Harame. "Evolution and Optimization of BEOL MOM Capacitors Across Advanced CMOS Nodes." In 48th European Solid-State Device Research Conference (ESSDERC 2018). IEEE, 2018. http://dx.doi.org/10.1109/essderc.2018.8486905.
Vanukuru, Venkata Narayana Rao. "Millimeter-wave bandpass filter using high-Q conical inductors and MOM capacitors." In 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). IEEE, 2016. http://dx.doi.org/10.1109/rfic.2016.7508245.
Steele, J., T. Remmel, S. Wilson, M. Nair, P. Sanders, S. Kiefer, M. Sutton, et al. "MIM Capacitor Reliability Fault Identification Using IR Microthermography and Automated De-processing: A Case Study." In ISTFA 2003. ASM International, 2003. http://dx.doi.org/10.31399/asm.cp.istfa2003p0437.
Lee, Kuang Shien, and Lai Khei Kuan. "FA Approach on MIM (Metal-Insulator-Metal) Capacitor Failures." In ISTFA 2021. ASM International, 2021. http://dx.doi.org/10.31399/asm.cp.istfa2021p0324.
Chen, Xianfeng, Ming Li, Qiang Guo, Kary Chien, and YanBo Gao. "Failure Analysis for Gate Oxide Breakdown." In ISTFA 2008. ASM International, 2008. http://dx.doi.org/10.31399/asm.cp.istfa2008p0088.
Maeng, Jimin, Sangsub Song, Chan-Sei Yoo, Heeseok Lee, and Kwangseok Seo. "Integration of MIM Capacitors on BCB with Thin-Film MCM-D Technology." In 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.p-2-4.
Yong, Yu, Waisum Wong, Zou Xiaowei, Yu Qianmin, Sun Lijie, Zhao Zicai, Li Zan, and Cheng Changhong. "MoM Capacitor Variation Models for FinFET Era." In 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2018. http://dx.doi.org/10.1109/icsict.2018.8564813.
Birmpiliotis, D., M. Koutsoureli, L. Buhagier, G. Papaioannou, and A. Ziaei. "Mitigation of Dielectric Charging in MEMS Capacitive Switches with Stacked TiO2/Y2O3 Insulator Film." In ISTFA 2018. ASM International, 2018. http://dx.doi.org/10.31399/asm.cp.istfa2018p0324.
Ping, Chu Tsui, Yang Peng, and Tee Pei Ling. "Influences Study on MIM capacitors' reliability." In 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE). IEEE, 2012. http://dx.doi.org/10.1109/smelec.2012.6417212.
Звіти організацій з теми "MOM capacitors":
Welty, Amy K., Troy G. Garn, and Mitchell Greenhalgh. Initial Evaluation of CaSDB MOF Xe and Kr Capacities. Office of Scientific and Technical Information (OSTI), March 2018. http://dx.doi.org/10.2172/1467472.