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Готові списки джерел за темами / Nanometer SiO2

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Добірка наукової літератури з теми "Nanometer SiO2"

Автор: Grafiati

Опубліковано: 3 червня 2025

Оновлено: 31 липня 2025

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Статті в журналах з теми "Nanometer SiO2"

1

Heng, C. L., Y. K. Sun, S. T. Wang, et al. "Electroluminescence from semitransparent Au film/nanometer SiO2/nanometer Si/nanometer SiO2/n+–Si structure under reverse bias." Applied Physics Letters 77, no. 10 (2000): 1416–18. http://dx.doi.org/10.1063/1.1290597.

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2

Moges, Kidist, Mitsuru Sometani, Takuji Hosoi, Takayoshi Shimura, Shinsuke Harada, and Heiji Watanabe. "Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N₂-Annealed SiO₂/4H-SiC(0001) Structures." Materials Science Forum 963 (July 2019): 226–29. http://dx.doi.org/10.4028/www.scientific.net/msf.963.226.

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We demonstrated an x-ray photoelectron spectroscopy (XPS)-based technique to reveal the detailed nitrogen profile in nitrided SiO2/4H-SiC structures with sub-nanometer-scale-resolution. In this work, nitric oxide (NO)- and pure nitrogen (N2)-annealed SiO2/4H-SiC(0001) structures were characterized. The measured results of NO-annealed samples with various annealing duration indicate that preferential nitridation just at the SiO2/SiC interfaces (~0.3 nm) proceeds in the initial stage of NO annealing and a longer duration leads to the distribution of nitrogen in the bulk SiO2 within few nanometer

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3

Chen, Zhuo, Jun Guo, Hao Li Qin, et al. "Character and Preparation of Nano-SiO₂/PI Composites by Sol-Gel Method." Advanced Materials Research 924 (April 2014): 110–14. http://dx.doi.org/10.4028/www.scientific.net/amr.924.110.

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Polyimide/nano-SiO2 (PI/SiO2) composites with different contents of SiO2 were prepared by in situ polymerization. The transmittance, solubility, thermal property, flame retardant properties and mechanics properties of PI/nano-SiO2 composites were investigated. The results showed that with the increased addition of SiO2 content, the transmittance of PI/SiO2 compositions reduced; tensile strength changed with the amount of nanometer powder, when the addition content was 10 wt%, it achieve the maximum value. Thermal resistance of the composite was improved obviously while with the amount of nanom

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4

Gulec, A., X. X. Yu, M. Taylor, et al. "Early Stage of Oxidation of Mo3Si by In Situ Environmental Transmission Electron Microscopy." Corrosion 74, no. 3 (2017): 288–94. http://dx.doi.org/10.5006/2564.

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Mo-Si-based superalloys are of interest as a new family of high-temperature materials to replace Ni-based alloys. By means of in situ environmental transmission electron microscope, the transient period of the early oxidation of Mo3Si was investigated at the nanometer scale. As a result of a competition between loss of volatile MoO3 and association of SiO2 molecular units into pillars, a nanometer-sized porous SiO2 grows at a very initial stage of the oxidation of Mo3Si.

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5

Ju, Jian Feng, Dong Hui Wu, and Yu Jun Shi. "PtRu-SiO₂-TiO₂/C Anode Electrocatalyst for Direct Methanol Fuel Cell." Advanced Materials Research 287-290 (July 2011): 1369–74. http://dx.doi.org/10.4028/www.scientific.net/amr.287-290.1369.

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The PtRu-SiO2-TiO2/C anode electrocatalyst ( loading 10wt% PtRu ) of direct methanol fuel cell is prepared by the surface reductive deposition method, using Vulcan XC-72 carbon black coated with nanometer SiO2-TiO2 (SiO2-TiO2/C) as the isotopic carrier. The surface characteristics of nanometer SiO2-TiO2 is studied through nitrogen adsorption, which shows that it is of porous structure together with large surface area, that is benefit to enhance the activity of SiO2-TiO2 and the dispersion of PtRu nanoparticle on the carrier of SiO2-TiO2/C. X-ray diffraction( XRD ) and transmission electron mic

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6

Li, Qiu Yi, Zu Wei Song, Ru Zhao, Wei Hua Xue, and Ying Jie Qiao. "Preparation and Synthetic Mechanism of Silicon Carbide Nanometer Whiskers." Key Engineering Materials 336-338 (April 2007): 2077–78. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.2077.

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β-SiC nanometer whiskers were prepared in a double heating furnace that is composed of the interior and exterior heating systems. The SiO2 nanometer powder and char pyrolyzed from phenol formaldehyde resin were used as starting materials. The effects of sintering temperature and holding time on β-SiC nanometer whiskers were investigated and the synthetic mechanism was studied. It was revealed that the β-SiC nanometer whiskers, with the diameter of 50-80nm and the aspect ratio of 50-300, can be prepared at 1300°C for 60 min. The purity of the β-SiC nanometer whiskers is about 99%.

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7

Hu, Jun, Minming Gu, Lanping Zhang, et al. "STM studies of uncovered SiO2 nanometer-particles." Ultramicroscopy 42-44 (July 1992): 1394–97. http://dx.doi.org/10.1016/0304-3991(92)90455-s.

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8

Zhang, De Hua, Wen Hao Fan, Feng Zhang, Shao Ping Chen, and Qing Sen Meng. "Preparation and Thermoelectric Characteristics of SiO₂/Mg₂Si_0.8Sn_0.2 Bulk Nanocomposite." Advanced Materials Research 415-417 (December 2011): 47–51. http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.47.

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In the present study, Mg2Si nanoparticles of high purity were successfully synthesized through low-temperature reaction by using MgH2and Si powders as rawmaterials. The size of Mg2Si particles is about 50nm. The bulk nanocomposites xSiO2/Mg2Si0.8Sn0.2(x = 0, 0.1, 1 and 2wt. %) were followed by field-Activated and pressure-assisted synthesis (FAPAS). The effects of SiO2addition on the microstructure and thermoelectric properties of Mg2Si0.8Sn0.2were studied. The field emission scanning electron microscopy shows that the nanometer-sized SiO2particles disperse homogeneously in Mg2Si0.8Sn0.2matrix

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9

Kaur, Anupreet, and Usha Gupta. "Sorption and Preconcentration of Lead on Silica Nanoparticles Modified with Resacetophenone." E-Journal of Chemistry 6, no. 3 (2009): 633–38. http://dx.doi.org/10.1155/2009/694675.

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The silica-resacetophenone (SiO2-RATP) nanoparticles were used as a new sorbent for extraction of trace amounts of Pb(II) by batch technique. Conditions of the analysis such as preconcentration factor, effect of pH, sample volume, shaking time, elution conditions and effects of interfering ions for the recovery of analyte were investigated. The adsorption capacity of nanometer SiO2-RATP was found to be 167.24 µ mol/g at optimum pH and the detection limit (3σ) was 0.58 µg/L. The adsorption equilibrium of Pb(II) on nanometer SiO2-RATP was achieved in 20 min. Adsorbed Pb(II) was easily eluted wit

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10

Yan, Hong Hao, Shu Xiong Xi, and Xian Chao Huang. "Study on Nano SiO₂ Synthesized by Gaseous Detonation under Different Initial Temperature." Materials Science Forum 694 (July 2011): 180–83. http://dx.doi.org/10.4028/www.scientific.net/msf.694.180.

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Taking the mixed gas of the silicon tetrachloride, the air and the hydrogen as the explosion source, adjusting the initial temperature of the mixed gas and detonating it in the gaseous detonation tube, after washing, filtering with alcohol and drying, the nanometer SiO2 powder is obtained. The analysis on the nanometer SiO2 powder is carried on with X-ray fluorescence spectroscopy, transmission electron microscopy and x-ray diffraction instrument. By analyze the ingredient of the obtained product with x-ray fluorescence spectrometry, it is measured that its main component is SiO2; by XRD analy

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Більше джерел

Частини книг з теми "Nanometer SiO2"

1

Lifshitz, E., M. Yassen, L. Bykov, I. Dag, and R. Chaim. "Nanometer Sized Particles of PbI2 Layered Semiconductors, Embedded in SiO2 Films: Quantum Size Effect and Photodecomposition Processes." In Nanophase Materials. Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1076-1_53.

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2

Shimizu-Iwayama, Tsutomu, Yoichi Terao, Atsushi Kamiya, Motonori Takeda, Setsuo Nakao, and Kazuo Saitoh. "Novel approach for synthesizing of nanometer-sized Si crystals in SiO2 by ion implantation and their optical characterization." In Ion Beam Processing of Materials and Deposition Processes of Protective Coatings. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82410-3.50049-7.

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Тези доповідей конференцій з теми "Nanometer SiO2"

1

Wei, W., X. N. Zhu, Y. Zhao, and Q. Wu. "Nanometer SiO2 Antireflection Coating for Solar Modules." In International Conference on Materials Chemistry and Environmental Protection 2015. Atlantis Press, 2016. http://dx.doi.org/10.2991/meep-15.2016.10.

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2

Sneh, Ofer, Michael L. Wise, and Steven M. George. "Atomic Layer Growth of SiO2 on Si(100) using SiCl4 and H2O in a Binary Reaction Sequence." In Microphysics of Surfaces: Nanoscale Processing. Optica Publishing Group, 1995. http://dx.doi.org/10.1364/msnp.1995.mfb4.

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Future silicon microelectronics technology will require nanoscale components to achieve ultra large scale integration. The reduction to nanometer scale sizes will be dependent on processing that can be controlled at the atomic level and conformally deposit into high aspect ratio structures. The Si/SiO2 interface is central in silicon technology. Controlled and conformal deposition of SiO2 dielectric layers will be crucial for the fabrication of MOS gate oxides as thin as 50 Å and high aspect ratio trench capacitors in DRAM. Both requirements can be inherently achieved by the technique known as

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3

Chu, An-Shyang, Saleen H. Zaidi, A. B. Torres, S. R. J. Brueck, and B. L. Draper. "Fabrication of nanometer linewidth structures in Si." In OSA Annual Meeting. Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.tui1.

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Techniques for fabrication of large, uniform arrays of semiconductor structures with nanometer-scale dimensions are of great interest for investigating quantum size effects. We report on a simple technique for fabricating arrays of Si wires with transverse dimensions ≤ 10 nm. This technique takes advantage of the capabilities of optical interferometric lithography to produce very high spatial frequency gratings and the strongly directional KOH etching of Si. A <110> Si wafer is prepared with thin (50-nm) Si3N4 and standard photoresist (0.15 mm) layers. A submicrometer period grating is i

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4

Nakagawa, K., M. Fukuda, S. Miyazaki, and M. Hirose. "Self-Assembling of Silicon Quantum Dot and Its Electronic Characterization." In Chemistry and Physics of Small-Scale Structures. Optica Publishing Group, 1997. http://dx.doi.org/10.1364/cps.1997.csub.4.

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Formation of Si quantum dot array on ultrathin SiO2 is a key to develop a silicon-based resonant tunneling device[1] or quantum-dot floating-gate MOS memory[2]. In order to achieve room temperature operation of such quantum dot devices, the dot size should be as small as 3nm as evaluated by a simple quantum box model or coulombic charging energy. Recently it is demonstrated that Si quantum dots can be spontaneously produced on SiO2 by controlling the early stages of low-pressure chemical vapor deposition(LPCVD) of SiH4[1, 3]. For the purpose of the device application the dot size distribution

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5

Mulyanti, Budi, Lilik Hasanah, Arjuni B. Pantjawati, Hideki Murakami, and Khairurrijal. "Modeling of tunneling currents on Al/SiO2/p-Si MOS capacitors with nanometer-thick oxides." In 2013 3rd International Conference on Instrumentation, Communications, Information Technology, and Biomedical Engineering (ICICI-BME). IEEE, 2013. http://dx.doi.org/10.1109/icici-bme.2013.6698505.

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6

DU, Jianhua, Yuanyuan LI, and Yanwei LIU. "Effect of Sintering Temperature on Friction Performance of Cu-based Nanometer Composites Reinforced by Nano SiO2 Particles." In 2nd International Conference on Electronic and Mechanical Engineering and Information Technology. Atlantis Press, 2012. http://dx.doi.org/10.2991/emeit.2012.253.

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7

Han, Li-Hsin, Tingji Tang, and Shaochen Chen. "Photo-Deformable Micro-Shells of Nanometer Thick." In ASME 4th Integrated Nanosystems Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/nano2005-87059.

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Azobenzene is a chemical structure that directly transmits energy of ultraviolet (UV) light, through an isomerization between the trans and cis states of a double bond between two nitrogen atoms, to a mechanical effect that reduces its molecular length from 9.0 Å to 5.5 Å [1]. This phenomenon has been applied in the fabrication of photo-deformable polymers, where monomers containing azobenzene were polymerized to form gel-like materials [1, 2, 3]. The mechanism of photo-isomerization could be very promising for the field concerning nano/micro-electro-mechanical-system (MEMS/NEMS) [4]. Layer-by

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8

Kim, Wan-Sik, Junghoon Lee, and Rodney S. Ruoff. "Nanofluidic Channel Fabrication and Characterization by Micromachining." In ASME 2003 International Mechanical Engineering Congress and Exposition. ASMEDC, 2003. http://dx.doi.org/10.1115/imece2003-41588.

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The well-established microfabrication techniques of complementary metallic oxide silicon (CMOS) selective oxidation and wafer-wafer fusion bonding were used to fabricate sub-micrometer silicon fluidic channels as small as 30 nm between extremely thin SiO2 top and bottom layers of 30 nm thicknesses. Trenches a few tens of nanometer deep were patterned in 10-cm diameter Si wafers by selective oxidation and their depth measured by atomic force microscopy (AFM); the AFM measured depths showed that the trench depth could be controlled to nanometer resolution. The resolution of the photolithography

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9

Goh, W. Z., B. Fong, H. Hussin, and S. F. Wan Muhamad Hatta. "Study of Scaling Limits of Multi-Gate Fets (Finfet) With High-K Dielectric." In International Technical Postgraduate Conference 2022. AIJR Publisher, 2022. http://dx.doi.org/10.21467/proceedings.141.18.

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Scaling of Multi-Gate FETs (FinFETs) to sub nanometer has seen several challenging problems such as short channel effects which significantly affect the device performance and huge off-state power leakage. High-k dielectric materials had always been looked at as a potential replacement to the conventional SiO2 to increase gate control over the channel which could be a possible solution. This paper examines the impact of scaling FinFETs with varying geometric conditions in the presence of high-k gate dielectrics oxide layer, and further demonstrate conflicting technical trade-off that emerges f

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10

Tsai, Rung-Ywan, F. C. Ho, and Mu-Yi Hua. "Investigation of the phase composition for TiO2-SiO2 composite films prepared by reactive ion-assisted coevaporation using atomic force microscopy." In Optical Interference Coatings. Optica Publishing Group, 1995. http://dx.doi.org/10.1364/oic.1995.thb12.

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Recently there has been a great deal of interest in studying TiO2-SiO2 composite films. These films can be produced by coevaporation,1 cosputtering,2 and sol-gel3 methods. Material studies have highlighted the novel properties of this composite films. From the x-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses, structures of TiO2-SiO2 composite and their compositional component films deposited by reactive ion-assisted coevaporation (IAC) are completely amorphous, which is one of the favored properties for optical coating materials. However, it is difficult to identify

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