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1
Krey, Maximilian, Bernd Hähnlein, Katja Tonisch, Stefan Krischok, and Hannes Töpfer. "Automated Parameter Extraction Of ScAlN MEMS Devices Using An Extended Euler–Bernoulli Beam Theory." Sensors 20, no. 4 (February 13, 2020): 1001. http://dx.doi.org/10.3390/s20041001.
Анотація:
Magnetoelectric sensors provide the ability to measure magnetic fields down to the pico tesla range and are currently the subject of intense research. Such sensors usually combine a piezoelectric and a magnetostrictive material, so that magnetically induced stresses can be measured electrically. Scandium aluminium nitride gained a lot of attraction in the last few years due to its enhanced piezoelectric properties. Its usage as resonantly driven microelectromechanical system (MEMS) in such sensors is accompanied by a manifold of influences from crystal growth leading to impacts on the electrical and mechanical parameters. Usual investigations via nanoindentation allow a fast determination of mechanical properties with the disadvantage of lacking the access to the anisotropy of specific properties. Such anisotropy effects are investigated in this work in terms of the Young’s modulus and the strain on basis of a MEMS structures through a newly developed fully automated procedure of eigenfrequency fitting based on a new non-Lorentzian fit function and subsequent analysis using an extended Euler–Bernoulli theory. The introduced procedure is able to increase the resolution of the derived parameters compared to the common nanoindentation technique and hence allows detailed investigations of the behavior of magnetoelectric sensors, especially of the magnetic field dependent Young‘s modulus of the magnetostrictive layer.
2
Hähnlein, Bernd, Tim Hofmann, Katja Tonisch, Jörg Pezoldt, Jaroslav Kovac, and Stefan Krischok. "Structural Analysis of Sputtered Sc(x)Al(1-x)N Layers for Sensor Applications." Key Engineering Materials 865 (September 2020): 13–18. http://dx.doi.org/10.4028/www.scientific.net/kem.865.13.
Анотація:
Scandium aluminum nitride (ScxAl1-xN) is a promising material for sensor applications as it exhibits enhanced piezoelectric properties compared to pristine AlN while maintaining other advantageous properties like high thermal stability. Magnetoelectric sensors in particular are used to detect magnetic fields which leads to special requirements regarding the investigated ScAlN in order to achieve high sensor sensitivities. Co-sputtered ScAlN layers are investigated in this work using XRD, XPS, FTIR and Raman spectroscopy for scandium concentrations from 0 to 34 %. The impact of Sc incorporation regarding residual biaxial strain and bond softening is discussed on basis of the experimental results. The activity of the B1 and E2 modes found in the FTIR measurements is of special interest as the presumably oxygen related excitation is expected to influence the piezoelectric properties.
3
Wei, Min, Yan Liu, Yuanhang Qu, Xiyu Gu, Yilin Wang, Wenjuan Liu, Yao Cai, Shishang Guo, and Chengliang Sun. "Development of Temperature Sensor Based on AlN/ScAlN SAW Resonators." Electronics 12, no. 18 (September 12, 2023): 3863. http://dx.doi.org/10.3390/electronics12183863.
Анотація:
Temperature monitoring in extreme environments presents new challenges for MEMS sensors. Since aluminum nitride (AlN)/scandium aluminum nitride (ScAlN)-based surface acoustic wave (SAW) devices have a high Q-value, good temperature drift characteristics, and the ability to be compatible with CMOS, they have become some of the preferred devices for wireless passive temperature measurement. This paper presents the development of AlN/ScAlN SAW-based temperature sensors. Three methods were used to characterize the temperature characteristics of a thin-film SAW resonator, including direct measurement by GSG probe station, and indirect measurement by oscillation circuit and antenna. The temperature characteristics of the three methods in the range of 30–100 °C were studied. The experimental results show that the sensitivities obtained with the three schemes were −28.9 ppm/K, −33.6 ppm/K, and −29.3 ppm/K. The temperature sensor using the direct measurement method had the best linearity, with a value of 0.0019%, and highest accuracy at ±0.70 °C. Although there were differences in performance, the characteristics of the three SAW temperature sensors make them suitable for sensing in various complex environments.
4
N. I .M. Nor, N. Khalid, H. Aris, M. S. Mispan, and N. Aiman Syahmi. "Analysis of Different Piezoelectric Materials on the Film Bulk Acoustic Wave Resonator." International Journal of Nanoelectronics and Materials (IJNeaM) 16, DECEMBER (December 26, 2023): 121–30. http://dx.doi.org/10.58915/ijneam.v16idecember.398.
Анотація:
The performance of film bulk acoustic wave resonators (FBAR) is greatly dependent on the choice of piezoelectric materials. Different piezoelectric materials have distinct properties that can impact the performance of FBAR. Hence, this work presents the analysis of three different piezoelectric materials which are aluminum nitride (AlN), scandium aluminum nitride (ScAlN) and zinc oxide (ZnO) on the performance of FBARs working at resonance frequencies of 6 GHz until 10 GHz. The one-dimensional (1-D) modelling is implemented to characterize the effects of these materials on the quality (Q) factor, electromechanical coupling coefficient (k2eff) and bandwidth (BW). It is determined that employing ScAlN in FBAR results in the highest Q factor, ranges from 628 to 1047 while maintaining a relatively compact area (25 µm × 25 µm) and thickness (430 nm to 720 nm). However, ScAlN yields the narrowest BW, measuring 0.11 GHz at 6 GHz, as opposed to AlN and ZnO, which exhibit broader bandwidths of 0.16 GHz and 0.23 GHz, respectively.
5
Stoeckel, Chris, Katja Meinel, Marcel Melzer, Agnė Žukauskaitė, Sven Zimmermann, Roman Forke, Karla Hiller, and Harald Kuhn. "Static High Voltage Actuation of Piezoelectric AlN and AlScN Based Scanning Micromirrors." Micromachines 13, no. 4 (April 15, 2022): 625. http://dx.doi.org/10.3390/mi13040625.
Анотація:
Piezoelectric micromirrors with aluminum nitride (AlN) and aluminum scandium nitride (Al0.68Sc0.32N) are presented and compared regarding their static deflection. Two chip designs with 2 × 3 mm2 (Design 1) and 4 × 6 mm2 (Design 2) footprint with 600 nm AlN or 2000 nm Al0.68Sc0.32N as piezoelectric transducer material are investigated. The chip with Design 1 and Al0.68Sc0.32N has a resonance frequency of 1.8 kHz and a static scan angle of 38.4° at 400 V DC was measured. Design 2 has its resonance at 2.1 kHz. The maximum static scan angle is 55.6° at 220 V DC, which is the maximum deflection measurable with the experimental setup. The static deflection per electric field is increased by a factor of 10, due to the optimization of the design and the research and development of high-performance piezoelectric transducer materials with large piezoelectric coefficient and high electrical breakthrough voltage.
6
Zhang, Qiaozhen, Mingzhu Chen, Huiling Liu, Xiangyong Zhao, Xiaomei Qin, Feifei Wang, Yanxue Tang, Keat Hoe Yeoh, Khian-Hooi Chew, and Xiaojuan Sun. "Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices." Materials 14, no. 21 (October 27, 2021): 6437. http://dx.doi.org/10.3390/ma14216437.
Анотація:
In this work, we systematically studied the deposition, characterization, and crystal structure modeling of ScAlN thin film. Measurements of the piezoelectric device’s relevant material properties, such as crystal structure, crystallographic orientation, and piezoelectric response, were performed to characterize the Sc0.29Al0.71N thin film grown using pulsed DC magnetron sputtering. Crystal structure modeling of the ScAlN thin film is proposed and validated, and the structure–property relations are discussed. The investigation results indicated that the sputtered thin film using seed layer technique had a good crystalline quality and a clear grain boundary. In addition, the effective piezoelectric coefficient d33 was up to 12.6 pC/N, and there was no wurtzite-to-rocksalt phase transition under high pressure. These good features demonstrated that the sputtered ScAlN is promising for application in high-coupling piezoelectric devices with high-pressure stability.
7
Zhang, Yuchao, Bin Miao, Guanghua Wang, Hongyu Zhou, Shiqin Zhang, Yimin Hu, Junfeng Wu, Xuechao Yu, and Jiadong Li. "ScAlN Film-Based Piezoelectric Micromechanical Ultrasonic Transducers with Dual-Ring Structure for Distance Sensing." Micromachines 14, no. 3 (February 23, 2023): 516. http://dx.doi.org/10.3390/mi14030516.
Анотація:
Piezoelectric micromechanical ultrasonic transducers (pMUTs) are new types of distance sensors with great potential for applications in automotive, unmanned aerial vehicle, robotics, and smart homes. However, previously reported pMUTs are limited by a short sensing distance due to lower output sound pressure. In this work, a pMUT with a special dual-ring structure based on scandium-doped aluminum nitride (ScAlN) is proposed. The combination of a dual-ring structure with pinned boundary conditions and a high piezoelectric performance ScAlN film allows the pMUT to achieve a large dynamic displacement of 2.87 μm/V and a high electromechanical coupling coefficient (kt2) of 8.92%. The results of ranging experiments show that a single pMUT achieves a distance sensing of 6 m at a resonant frequency of 91 kHz, the farthest distance sensing registered to date. This pMUT provides surprisingly fertile ground for various distance sensing applications.
8
Li, Minghua, Huamao Lin, Kan Hu, and Yao Zhu. "Oxide overlayer formation on sputtered ScAlN film exposed to air." Applied Physics Letters 121, no. 11 (September 12, 2022): 111602. http://dx.doi.org/10.1063/5.0106717.
Анотація:
There has been much interest in developing scandium doped aluminum nitride (ScAlN) thin films for use in electronic devices, due to their excellent piezoMEMS response, large spontaneous polarization, and the capability for CMOS-compatible integration. As with the undoped AlN film, the formation of an oxide overlayer on the air-exposed ScAlN film can modulate its surface structure and the electrical properties. In this study, we investigate the effects of surface oxidation on a ScAlN film by characterizing the film microstructure and the elemental chemical states. We found that amorphous phase and small crystallites co-exist in the oxide overlayer, which is remarkably different from the columnar (0002) crystalline texture in the bulk ScAlN film. X-ray photoelectron spectroscopy core-level analyses confirm the formation of Al–O and Sc–O bonds. Moreover, the valence band maximum of the oxide overlayer shifts toward a higher binding energy, indicating a high energy barrier at the ScAlN/metal interface. Our results suggest that ScAlN surface oxidation is a chemical reaction-driven and self-limited process.
9
Ji, Meilin, Haolin Yang, Yongxin Zhou, Xueying Xiu, Haochen Lv, and Songsong Zhang. "Bimorph Dual-Electrode ScAlN PMUT with Two Terminal Connections." Micromachines 13, no. 12 (December 19, 2022): 2260. http://dx.doi.org/10.3390/mi13122260.
Анотація:
This paper presents a novel bimorph Piezoelectric Micromachined Ultrasonic Transducer (PMUT) fabricated with 8-inch standard CMOS-compatible processes. The bimorph structure consists of two layers of 20% scandium-doped aluminum nitride (Sc0.2Al0.8N) thin films, which are sandwiched among three molybdenum (Mo) layers. All three Mo layers are segmented to form the outer ring and inner plate electrodes. Both top and bottom electrodes on the outer ring are electrically linked to the center inner plate electrodes. Likewise, the top and bottom center plate electrodes are electrically connected to the outer ring in the same fashion. This electrical configuration maximizes the effective area of the given PMUT design and improves efficiency during the electromechanical coupling process. In addition, the proposed bimorph structure further simplifies the device’s electrical layout with only two-terminal connections as reported in many conventional unimorph PMUTs. The mechanical and acoustic measurements are conducted to verify the device’s performance improvement. The dynamic mechanical displacement and acoustic output under a low driving voltage (1 Vpp) are more than twice that reported from conventional unimorph devices with a similar resonant frequency. Moreover, the pulse-echo experiments indicate an improved receiving voltage of 10 mV in comparison with the unimorph counterpart (4.8 mV). The validation of device advancement in the electromechanical coupling effect by using highly doped ScAlN thin film, the realization of the proposed bimorph PMUT on an 8-inch wafer paves the path to production of next generation, high-performance piezoelectric MEMS.
10
Liu, Xiaonan, Qiaozhen Zhang, Mingzhu Chen, Yaqi Liu, Jianqiu Zhu, Jiye Yang, Feifei Wang, Yanxue Tang, and Xiangyong Zhao. "Multiphysics Modeling and Analysis of Sc-Doped AlN Thin Film Based Piezoelectric Micromachined Ultrasonic Transducer by Finite Element Method." Micromachines 14, no. 10 (October 18, 2023): 1942. http://dx.doi.org/10.3390/mi14101942.
Анотація:
This paper presents a Piezoelectric micromechanical ultrasonic transducer (PMUT) based on a Pt/ScAlN/Mo/SiO2/Si/SiO2/Si multilayer structure with a circular suspension film of scandium doped aluminum nitride (ScAlN). Multiphysics modeling using the finite element method and analysis of the effect of different Sc doping concentrations on the resonant frequency, the effective electromechanical coupling coefficient (keff2) and the station sensitivity of the PMUT cell are performed. The calculation results show that the resonant frequency of the ScAlN-based PMUT can be above 20 MHz and its keff2 monotonically rise with the increasing doping concentrations in ScAlN. In comparison to the pure AlN thin film-based PMUT, the static receiving sensitivity of the PMUT based on ScAlN thin film with 35% Sc doping concentration is up to 1.61 mV/kPa. Meanwhile, the static transmitting sensitivity of the PMUT is improved by 152.95 pm/V. Furthermore, the relative pulse-echo sensitivity level of the 2 × 2 PMUT array based on the Sc doping concentration of 35% AlN film is improved by 16 dB compared with that of the cell with the same Sc concentration. The investigation results demonstrate that the performance of PMUT on the proposed structure can be tunable and enhanced by a reasonable choice of the Sc doping concentration in ScAlN films and structure optimization, which provides important guidelines for the design of PMUT for practical applications.
11
Tominaga, Takumi, Shinji Takayanagi, and Takahiko Yanagitani. "Negative-ion bombardment increases during low-pressure sputtering deposition and their effects on the crystallinities and piezoelectric properties of scandium aluminum nitride films." Journal of Physics D: Applied Physics 55, no. 10 (December 9, 2021): 105306. http://dx.doi.org/10.1088/1361-6463/ac3d5c.
Анотація:
Abstract Scandium aluminum nitride (ScAlN) films are being actively researched to explore their potential for use in bulk acoustic wave and surface acoustic wave resonators because of their good piezoelectric properties. Sputtering is commonly used in ScAlN film deposition. Unfortunately, it has been reported that film quality metrics such as the crystallinity and piezoelectric properties can deteriorate before the Sc concentration reaches 43% without an isostructural phase transition. One reason for this is bombardment with negative ions generated from carbon and oxygen impurities in the Sc ingots. Because the number of negative ions increases during low-pressure sputtering deposition, their effect on film quality may be considerable. In this study, we investigated negative-ion bombardment of the substrate during sputtering deposition and its effects on ScAlN crystallinity and piezoelectric properties. Negative-ion energy distribution measurements indicated that many more negative ions collide with the substrate during ScAlN film deposition than during AlN deposition. In addition, decreasing the sputtering pressure further increased the number of negative ions and their energies. It is well known that film quality improves at low pressures because increasing the mean free path reduces thermalization and scattering of sputtered particles. Although, AlN crystallinity and piezoelectric properties improved at low pressures, the properties of ScAlN films deteriorated dramatically. Therefore, the results indicated that ion bombardment increase at low pressure adversely effects ScAlN crystal growth, deteriorating crystallinity and piezoelectric properties. ScAlN films may be improved further by suppressing negative-ion bombardment of the substrate.
12
Shao, Shuai, Zhifang Luo, Kangfu Liu, and Tao Wu. "Lorentz-force gyrator based on AlScN piezoelectric thin film." Applied Physics Letters 121, no. 21 (November 21, 2022): 213505. http://dx.doi.org/10.1063/5.0122325.
Анотація:
This paper reports a chip-scale radio frequency Lorentz-force gyrator based on an aluminum scandium nitride (Al0.7Sc0.3N) thin film. The two-port gyrator, which is essentially a lateral overtone bulk acoustic resonator, consists of a planar coil for Lorentz-force transduction and two top-bottom electrode pairs for piezoelectric transduction. The non-reciprocity is generated by the phase transition in the Lorentz-force coupling when an external vertical magnetic field is applied. The Lorentz-force gyrators based on both AlN and Al0.7Sc0.3N thin films demonstrate good non-reciprocity, i.e., the 180° phase difference, at approximately 517 and 388 MHz, respectively. Thanks to larger piezoelectric constants, the Al0.7Sc0.3N gyrator demonstrates easier impedance matching and a wider fractional bandwidth of 6.3% at a magnetic field of 1.65 T compared to 1.3% for an AlN device. Finally, an isolator consisting of the Lorentz-force gyrator and a shunt resistor is demonstrated over 35 dB of isolation and flat unidirectional transmission.
13
Zhou, Yongxin, Yuandong Gu, and Songsong Zhang. "Nondestructive Wafer Level MEMS Piezoelectric Device Thickness Detection." Micromachines 13, no. 11 (November 5, 2022): 1916. http://dx.doi.org/10.3390/mi13111916.
Анотація:
This paper introduces a novel nondestructive wafer scale thin film thickness measurement method by detecting the reflected picosecond ultrasonic wave transmitting between different interfacial layers. Unlike other traditional approaches used for thickness inspection, this method is highly efficient in wafer scale, and even works for opaque material. As a demonstration, we took scandium doped aluminum nitride (AlScN) thin film and related piezoelectric stacking layers (e.g. Molybedenum/AlScN/Molybdenum) as the case study to explain the advantages of this approach. In our experiments, a laser with a wavelength of 515 nm was used to first measure the thickness of (1) a single Molybdenum (Mo) electrode layer in the range of 100–300 nm, and (2) a single AlScN piezoelectric layer in the range of 600–1000 nm. Then, (3) the combined stacking layers were measured. Finally, (4) the thickness of a standard piezoelectric composite structure (Mo/AlScN/Mo) was characterized based on the conclusions and derivation extracted from the aforementioned sets of experiments. This type of standard piezoelectric composite has been widely adopted in a variety of Micro-electromechanical systems (MEMS) devices such as the Piezoelectric Micromachined Ultrasonic Transducer (PMUT), the Film Bulk Acoustic Resonator (FBAR), the Surface Acoustic Wave (SAW) and more. A comparison between measurement data from both in-line and off-line (using Scanning Electron Microscope) methods was conducted. The result from such in situ 8-inch wafer scale measurements was in a good agreement with the SEM data.
14
Zhang, Zhenghu, Linwei Zhang, Zhipeng Wu, Yunfei Gao, and Liang Lou. "A High-Sensitivity MEMS Accelerometer Using a Sc0.8Al0.2N-Based Four Beam Structure." Micromachines 14, no. 5 (May 18, 2023): 1069. http://dx.doi.org/10.3390/mi14051069.
Анотація:
In this paper, a high-sensitivity microelectromechanical system (MEMS) piezoelectric accelerometer based on a Scandium-doped Aluminum Nitride (ScAlN) thin film is proposed. The primary structure of this accelerometer is a silicon proof mass fixed by four piezoelectric cantilever beams. In order to enhance the sensitivity of the accelerometer, the Sc0.2Al0.8N piezoelectric film is used in the device. The transverse piezoelectric coefficient d31 of the Sc0.2Al0.8N piezoelectric film is measured by the cantilever beam method and found to be −4.7661 pC/N, which is approximately two to three times greater than that of a pure AlN film. To further enhance the sensitivity of the accelerometer, the top electrodes are divided into inner and outer electrodes; then, the four piezoelectric cantilever beams can achieve a series connection by these inner and outer electrodes. Subsequently, theoretical and finite element models are established to analyze the effectiveness of the above structure. After fabricating the device, the measurement results demonstrate that the resonant frequency of the device is 7.24 kHz and the operating frequency is 56 Hz to 2360 Hz. At a frequency of 480 Hz, the sensitivity, minimum detectable acceleration, and resolution of the device are 2.448 mV/g, 1 mg, and 1 mg, respectively. The linearity of the accelerometer is good for accelerations less than 2 g. The proposed piezoelectric MEMS accelerometer has demonstrated high sensitivity and linearity, making it suitable for accurately detecting low-frequency vibrations.
15
Jang, Youna, and Dal Ahn. "Analyzing Three Types of Design Methods for 5G N41 Band Acoustic Wave Filters." International Journal of RF and Microwave Computer-Aided Engineering 2024 (January 13, 2024): 1–12. http://dx.doi.org/10.1155/2024/4638443.
Анотація:
This paper presents three design methods for acoustic wave (AW) filters: the direct conversion design method, the slope parameter method, and the band edge fitting method (BEFM). Since the conventional BVD model consists only of lumped elements and has accuracy only near the resonance frequency, an NM-BVD model capable of broadband modeling is proposed in this paper and used to design the filter. In the proposed BEFM, a systematically optimal filter method is used to design the AW filter, and each AW resonator is tuned to the filter prototype value to meet the desired specifications. Thus, the filter design time and the number of resonators can be efficiently improved, and the filter design time can be reduced compared with the direct conversion and slope parameter methods commonly used in filter design. To demonstrate the effectiveness of these design methods, the proposed methods were used to design and fabricate an N41 filter using scandium-doped aluminum nitride (ScAlN) resonators. The broadband capabilities of the filter were verified using BEFM. The design, fabrication, and measurement of a broadband filter that meets the requirements of the 5G N41 frequency band centered at 2.593 GHz with a bandwidth of 196 MHz have verified the filter fabricated using the proposed design method. The insertion loss is less than -3 dB in the target band and more than 30 dB out of band. In summary, the proposed BEFM provides an efficient and accurate method for designing AW filters.
16
Lu, Xianzheng, and Hao Ren. "Micromachined piezoelectric Lamb wave resonators: a review." Journal of Micromechanics and Microengineering, August 31, 2023. http://dx.doi.org/10.1088/1361-6439/acf587.
Анотація:
Abstract With the development of next-generation wireless communication and sensing technologies, there is an increasing demand for high-performance and miniaturized resonators. Micromachined piezoelectric Lamb wave resonators are becoming promising candidates because of their multiple vibration modes, lithographically defined frequencies, and small footprint. In the past two decades, micromachined piezoelectric Lamb wave resonators based on various piezoelectric materials and structures have achieved considerable progress in performance and applications. This review focuses on the state-of-the-art Lamb wave resonators based on aluminum nitride (AlN), aluminum scandium nitride (AlxSc1-xN), and lithium niobate (LiNbO3), as well as their applications and further developments. The promises and challenges of micromachined piezoelectric Lamb wave resonators are also discussed. It is promising for micromachined piezoelectric Lamb wave resonators to achieve higher resonant frequencies and performance through advanced fabrication technologies and new structures, the integration of multifrequency devices with radio frequency (RF) electronics as well as new applications through utilizing nonlinearity and spurious modes. However, several challenges, including degenerated electrical and thermal properties of nanometer-scale electrodes, accurate control of film thickness, high thin film stress, and a trade-off between electromechanical coupling efficiencies and resonant frequencies, may limit the commercialization of micromachined piezoelectric Lamb wave resonators and thus need further investigation. Potential mitigations to these challenges are also discussed in detail in this review. Through further painstaking research and development, micromachined piezoelectric Lamb wave resonators may become one of the strongest candidates in the commercial market of RF and sensing applications.
17
Gao, Yunfei, Minkan Chen, Zhipeng Wu, Lei Yao, Zhihao Tong, Songsong Zhang, Yuandong Alex Gu, and Liang Lou. "A miniaturized transit-time ultrasonic flowmeter based on ScAlN piezoelectric micromachined ultrasonic transducers for small-diameter applications." Microsystems & Nanoengineering 9, no. 1 (April 19, 2023). http://dx.doi.org/10.1038/s41378-023-00518-y.
Анотація:
AbstractTransit-time ultrasonic flowmeters (TTUFs) are among the most widely used devices for flow measurements. However, traditional TTUFs are usually based on a bulk piezoelectric transducer, which limits their application in small-diameter channels. In this paper, we developed a miniaturized TTUF based on scandium-doped aluminum nitride (ScAlN) piezoelectric micromachined ultrasonic transducers (PMUTs). The proposed TTUF contains two PMUT-based transceivers and a π-type channel. The PMUTs contain 13 × 13 square cells with dimensions of 2.8 × 2.8 mm2. To compensate for the acoustic impedance mismatch with liquid, a layer of polyurethane is added to the surface of the PMUTs as a matching layer. The PMUT-based transceivers show good transmitting sensitivity (with 0.94 MPa/V surface pressure) and receiving sensitivity (1.79 mV/kPa) at a frequency of 1 MHz in water. Moreover, the dimensions of the π-type channel are optimized to achieve a measurement sensitivity of 82 ns/(m/s) and a signal-to-noise ratio (SNR) better than 15 dB. Finally, we integrate the fabricated PMUTs into the TDC-GP30 platform. The experimental results show that the developed TTUF provides a wide range of flow measurements from 2 to 300 L/h in a channel of 4 mm diameter, which is smaller than most reported channels. The accuracy and repeatability of the TTUF are within 0.2% and 1%, respectively. The proposed TTUF shows great application potential in industrial applications such as medical and chemical applications.
18
Pyngrope, Dariskhem, Shubhankar Majumdar, and Giovanni Crupi. "Fractional order capacitance behavior due to hysteresis effect of ferroelectric material on GaN HEMT devices." International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 37, no. 2 (January 15, 2024). http://dx.doi.org/10.1002/jnm.3206.
Анотація:
AbstractIn recent years, gallium nitride (GaN) high electron mobility transistors (HEMTs) have come to the forefront of the semiconductor industry because of their exceptional performance in both high‐power and high‐frequency utility. Accurate capacitance modeling is crucial to optimize performance and facilitate energy‐efficient electronic circuit design. In order to reflect the complex nature of the aluminum scandium nitride (AlScN) gate capacitance in GaN HEMTs this study investigates the use of the unique Grünwald‐Letnikov model based on fractional order calculus. The proposed model presents a powerful approach to accurately characterize capacitance since fractional order derivatives allow modeling of non‐integer order systems. Quantitative assessment of the Grünwald‐Letnikov model's accuracy is performed through various error metrics, including mean absolute error (MAE), root mean square error (RMSE), maximum percentage error (MPE), mean absolute percentage error (MAPE), and mean squared error (MSE), by comparing the model's predictions to experimental data. Notably, this model demonstrates remarkable consistency in error metrics, with maximum values of MPE = 0.21%, MAE = 0.05%, MAPE = 0.33%, MSE = 0.01%, and RMSE = 0.09% for the forward scan, and MPE = 0.32%, MAE = 0.04%, MAPE = 0.39%, MSE = 0.01%, and RMSE = 0.08% for the backward scan. These metrics affirm the model's precision in capturing the nuanced capacitance characteristics of GaN HEMT devices. Hence, herein for the first time, the novel Grünwald‐Letnikov model, augmented by fractional order calculus, proves to be a robust tool for accurately characterizing GaN HEMT capacitance. Its ability to seamlessly account for the complexities introduced by using ferroelectric material highlights its potential for advancing semiconductor design and optimizing device performance.