Статті в журналах: "Non ideal devices"

1

West, Brian R., and David V. Plant. "Optimization of non-ideal multimode interference devices." Optics Communications 279, no. 1 (November 2007): 72–78. http://dx.doi.org/10.1016/j.optcom.2007.06.056.

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2

Schroeder, D., and U. Witkowski. "Simulation of semiconductor devices with non-ideal metallic contacts." IEEE Transactions on Electron Devices 44, no. 4 (April 1997): 679–81. http://dx.doi.org/10.1109/16.563375.

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3

Natan, A., L. Kronik, H. Haick, and R. T. Tung. "Electrostatic Properties of Ideal and Non-ideal Polar Organic Monolayers: Implications for Electronic Devices." Advanced Materials 19, no. 23 (December 3, 2007): 4103–17. http://dx.doi.org/10.1002/adma.200701681.

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4

Davey, K. "Optimization shows Halbach arrays to be non-ideal for induction devices." IEEE Transactions on Magnetics 36, no. 4 (July 2000): 1035–38. http://dx.doi.org/10.1109/20.877618.

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5

Lee, Jae-Eun, Chuljun Lee, Dong-Wook Kim, Daeseok Lee, and Young-Ho Seo. "An On-Chip Learning Method for Neuromorphic Systems Based on Non-Ideal Synapse Devices." Electronics 9, no. 11 (November 18, 2020): 1946. http://dx.doi.org/10.3390/electronics9111946.

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In this paper, we propose an on-chip learning method that can overcome the poor characteristics of pre-developed practical synaptic devices, thereby increasing the accuracy of the neural network based on the neuromorphic system. The fabricated synaptic devices, based on Pr1−xCaxMnO3, LiCoO2, and TiOx, inherently suffer from undesirable characteristics, such as nonlinearity, discontinuities, and asymmetric conductance responses, which degrade the neuromorphic system performance. To address these limitations, we have proposed a conductance-based linear weighted quantization method, which controls conductance changes, and trained a neural network to predict the handwritten digits from the standard database MNIST. Furthermore, we quantitatively considered the non-ideal case, to ensure reliability by limiting the conductance level to that which synaptic devices can practically accept. Based on this proposed learning method, we significantly improved the neuromorphic system, without any hardware modifications to the synaptic devices or neuromorphic systems. Thus, the results emphatically show that, even for devices with poor synaptic characteristics, the neuromorphic system performance can be improved.

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6

Nguyen, Quoc-Minh, Nan-Hui Chiang, Huu-Duy Tran, Hung-Yu Wang, and Li-Te Yin. "Symbolic nodal analysis of conveyor-based circuits considering non-ideal active devices." AEU - International Journal of Electronics and Communications 69, no. 11 (November 2015): 1635–40. http://dx.doi.org/10.1016/j.aeue.2015.07.014.

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7

Gubicza, Agnes, Miklós Csontos, András Halbritter, and György Mihály. "Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices." Nanoscale 7, no. 10 (2015): 4394–99. http://dx.doi.org/10.1039/c5nr00399g.

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8

English, Lisa B. "In Pursuit of an Ideal – A Perspective on Non-Invasive Continuous Glucose Monitoring." European Endocrinology 8, no. 1 (2010): 18. http://dx.doi.org/10.17925/ee.2012.08.01.18.

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Diabetes is one of the most common non-communicable diseases globally, and is the fourth or fifth leading cause of death in many countries. Medical technology for the management of diabetes has advanced steadily since the discovery of insulin in the early 20th century. Today, individuals with diabetes benefit from home-use blood glucose meters, continuous insulin pumps and, most recently, continuous glucose monitoring (CGM). Numerous studies have shown that frequent use of real-time CGM can improve glycaemic control with reduced risk of hypoglycaemia. However, current CGM devices have not been wholeheartedly embraced, limiting their potential. A CGM device that is accurate, non-invasive, pain-free and non-intrusive to daily activities could drive increased adoption and use of CGM, potentially improving health and quality of life for many individuals living with diabetes.

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9

Alim, Mohammad A., Sanjida Khanam, and Martin A. Seitz. "Immittance Spectroscopy of Smart Components and Novel Devices." Active and Passive Electronic Components 16, no. 3-4 (1994): 153–70. http://dx.doi.org/10.1155/1994/25820.

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AC small-signal immittance spectroscopy is employed as a viable tool to demonstrate electrical characterization, performance improvement, and quality assurance issues of smart materials-based components and novel devices. The variation in the ac response, complemented via dc measurements within a range of tolerating temperature, delineates competing phenomena occurring in the microstructures of these engineering material systems. The results are presented in a generic manner with possible explanations on the mechanisms for two selected Debye-like (nearly ideal) and non-Debye (non-ideal) low-capacitance resistors. This spectroscopic approach allows systematic development of a representative equivalent circuit, considered to be the characteristic of the devices and components, for specific applications.

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10

Halverson, Adam F., and Loucas Tsakalakos. "Junction Operation of GaAs Wire Array Solar Cells." MRS Proceedings 1493 (2013): 253–59. http://dx.doi.org/10.1557/opl.2013.403.

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ABSTRACTWire array solar cells benefit from enhanced coupling of light into the active area of the device, significantly decreased collection lengths due to radial charge separation and collection, and easier access to grain boundaries for passivation which may enable future deposition on non-wafer substrates. We report on an analysis of the junction operation of wire array based GaAs solar cells through temperature and light intensity dependent current-voltage analysis and compare these data to matched planar devices. We see evidence of non-ideal recombination pathways indicated by activation energies for generation-recombination that are significantly less than the band gap of GaAs. We observe voltage shifts in the wire array devices at low temperature and high light intensity that we posit can be explained by electron accumulation in the window layers of the devices.

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11

Huang, Yaren, Jonas Buettner, Benedikt Lechner, and Gerhard Wachutka. "The Impact of Non-Ideal Ohmic Contacts on the Performance of High-Voltage SiC MPS Diodes." Materials Science Forum 963 (July 2019): 553–57. http://dx.doi.org/10.4028/www.scientific.net/msf.963.553.

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The wide band gap of SiC semiconductor devices constitutes a serious challenge to build good Ohmic contacts on the surface of the p-type material. This is reflected in the numerical analysis of ”realistic” devices, where we have to cope with serious problems, such as a shifting threshold voltage, reduced forward conductivity, and no noticeable conductivity modulation by minority carrier injection from p+-emitters, in matching measured data with simulation results, as a consequence of the significant impact of non-ideal poor Ohmic contacts. In this work, we used a Schottky contact model together with a barrier tunneling model, instead of common ideal Ohmic contact model, to simulate the non-ideal Ohmic contact on SiC MPS diodes. Based on this approach, the I-V characteristics of real Ohmic contacts can be reproduced in high-fidelity simulations, providing us physical insight of the observed operational behavior.

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12

Lapin, Zachary J., Ryan Beams, Luiz Gustavo Cançado, and Lukas Novotny. "Near-field Raman spectroscopy of nanocarbon materials." Faraday Discussions 184 (2015): 193–206. http://dx.doi.org/10.1039/c5fd00050e.

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Nanocarbon materials, including sp² hybridized two-dimensional graphene and one-dimensional carbon nanotubes, and sp¹ hybridized one-dimensional carbyne, are being considered for the next generation of integrated optoelectronic devices. The strong electron–phonon coupling present in these nanocarbon materials makes Raman spectroscopy an ideal tool to study and characterize the material and device properties. Near-field Raman spectroscopy combines non-destructive chemical, electrical, and structural specificity with nanoscale spatial resolution, making it an ideal tool for studying nanocarbon systems. Here we use near-field Raman spectroscopy to study strain, defects, and doping in different nanocarbon systems.

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13

Sun, Xiaoyu, and Shimeng Yu. "Impact of Non-Ideal Characteristics of Resistive Synaptic Devices on Implementing Convolutional Neural Networks." IEEE Journal on Emerging and Selected Topics in Circuits and Systems 9, no. 3 (September 2019): 570–79. http://dx.doi.org/10.1109/jetcas.2019.2933148.

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14

Etezadi, Vahid, and Barry T. Katzen. "Endovascular Aortic Aneurysm Repair in ‘Non-ideal’ Patients – Techniques and Outcomes." Interventional Cardiology Review 5, no. 1 (2010): 90. http://dx.doi.org/10.15420/icr.2010.5.1.90.

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After almost 20 years of clinical experience, endovascular aortic aneurysm repair (EVAR) has become a well approved and established treatment with a rising prevalence and popularity among vascular specialists. Its initial favourable outcomes have been sufficiently maintained through long-term follow-ups in appropriately selected patients. Improvements to the EVAR technique with the introduction of newer-generation devices as well as enhancements in imaging systems and follow-up modalities have significantly expanded the scope of this treatment. However, there are still many patients with anatomies that preclude them from candidacy or result in sub-optimal outcome, such as an unfavourable neck, tortuosity or difficult access. This article briefly discusses the major known issues affecting EVAR candidacy and outcome and highlights some of the techniques that have been described to overcome these obstacles.

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15

Kim, Hyojung, Hyesun Sung, Seungbo Shim, and Dooyoul Lee. "P‐97: Improved Electrical Performance and Realiability of a‐IGZO TFT by N2O Plasma Treatment Optimization." SID Symposium Digest of Technical Papers 55, no. 1 (June 2024): 1762–65. http://dx.doi.org/10.1002/sdtp.17914.

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This study investigates the abnormal reliability degradations observed under positive bias temperature stress (PBTS) in a‐IGZO TFTs treated by N2O plasma treatment and proposes a solution according to the presence of N2O plasma in the subsequent postprocess. In mass manufacture of a‐IGZO TFTs, N2O plasma is usually completely removed during the subsequent post‐plasma treatment processes. However, we maintained the presence of N2O plasma and analyzed its effect on device performance and reliability. While a‐IGZO TFTs fabricated with N2O plasmaremoved during the post‐process exhibited non‐ideal negative Vth shifts under PBTS, the devices fabricated with N2O plasma present during post‐processing showed superior electrical performance and reliability, avoiding the non‐ideal Vth shift phenomenon. This study shows that maintaining N2O plasma during the post‐process is an effective method for ensuring device reliability as well as improved performance of a‐IGZO TFTs in mass production.

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16

Abuelma'atti, Muhammad Taher. "Novel Current-Mode Quotient Circuit." Active and Passive Electronic Components 17, no. 3 (1994): 151–55. http://dx.doi.org/10.1155/1994/76842.

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17

Luo, Bin, Prasanth Velvaluri, Yisi Liu, and Nian-Xiang Sun. "Magnetoelectric BAW and SAW Devices: A Review." Micromachines 15, no. 12 (December 3, 2024): 1471. https://doi.org/10.3390/mi15121471.

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Magnetoelectric (ME) devices combining piezoelectric and magnetostrictive materials have emerged as powerful tools to miniaturize and enhance sensing and communication technologies. This paper examines recent developments in bulk acoustic wave (BAW) and surface acoustic wave (SAW) ME devices, which demonstrate unique capabilities in ultra-sensitive magnetic sensing, compact antennas, and quantum control applications. Leveraging the mechanical resonance of BAW and SAW modes, ME sensors achieve the femto- to pico-Tesla sensitivity ideal for biomedical applications, while ME antennas, operating at acoustic resonance, allow significant size reduction, with high radiation gain and efficiency, which is suited for bandwidth-restricted applications. In addition, ME non-reciprocal magnetoacoustic devices using hybrid magnetoacoustic waves present novel solutions for RF isolation, which have also shown potential for the efficient control of quantum defects, such as negatively charged nitrogen-vacancy (NV−) centers. Continued advancements in materials and device structures are expected to further enhance ME device performance, positioning them as key components in future bio-sensing, wireless communication, and quantum information technologies.

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18

Payvand, Melika, Manu V. Nair, Lorenz K. Müller, and Giacomo Indiveri. "A neuromorphic systems approach to in-memory computing with non-ideal memristive devices: from mitigation to exploitation." Faraday Discussions 213 (2019): 487–510. http://dx.doi.org/10.1039/c8fd00114f.

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In this paper, we present a spiking neural network architecture that supports the use of non-ideal memristive devices as synaptic elements and propose mixed-signal analog-digital interfacing circuits to mitigate/exploit such non-idealities for neuromorphic computation.

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19

Hampton, Naomi. "Intrauterine Progestogens." British Menopause Society Journal 4, no. 2 (June 1998): 56–61. http://dx.doi.org/10.1177/136218079800400207.

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An ideal contraceptive is one that that is highly effective, long acting, safe, easy to administer, not interfering with coitus and fully and immediately reversible. In addition, it should have non-contraceptive benefits. Progestogen-releasing intrauterine devices, especially one releasing levonorgestrel, fulfil many of these criteria. The contraceptive and non-contraceptive uses of the progesterone and the levonorgestrel releasing devices will be discussed in this review.

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20

Lederer, Maximilian, Tobias Vogel, Thomas Kämpfe, Nico Kaiser, Eszter Piros, Ricardo Olivo, Tarek Ali, et al. "Heavy ion irradiation induced phase transitions and their impact on the switching behavior of ferroelectric hafnia." Journal of Applied Physics 132, no. 6 (August 14, 2022): 064102. http://dx.doi.org/10.1063/5.0098953.

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The discovery of ferroelectric hafnium oxide enabled a variety of non-volatile memory devices, like ferroelectric tunnel junctions or field-effect transistors. Reliable application of hafnium oxide based electronics in space or other high-dose environments requires an understanding of how these devices respond to highly ionizing radiation. Here, the effect of 1.6 GeV Au ion irradiation on these devices is explored, revealing a reversible phase transition, as well as a grain fragmentation process. The collected data demonstrate that non-volatile memory devices based on ferroelectric hafnia layers are ideal for applications where excellent radiation hardness is mandatory.

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21

Sergeev, Andrei, Sunny Karnani, and C. Mike Waits. "Modeling TPV Devices Based on Exact Analytical Solution of the Generalized Shockley – Queisser Model." MRS Advances 4, no. 16 (December 27, 2018): 905–11. http://dx.doi.org/10.1557/adv.2018.659.

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Exact solution of the generalized Shockley – Queisser model provides simple and effective tool for modeling of photovoltaic (PV) and thermophotovoltaic (TPV) devices with advanced photonic management. This formalism takes into account spectral characteristics of absorption/emission and a variety of recombination processes in semiconductor cell. In the current work we generalize this formalism to devices with non-ideal light reflectors used for light recycling and trapping. As an example, we investigate effects of the light management in InGaAsSb TPV converters (0.53 eV bandgap) with back surface reflector and with an additional front surface scattering layer, which provides Lambertian trapping of photons. We calculate the output power (efficiency) and investigate tradeoff between photon absorption and Auger recombination processes as a function of the device thickness. Finally, we compare performance of these TPV devices with the performance of traditional devices.

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22

Lin-Shi, X., J.-M. Retif, B. Allard, and H. Morel. "Non-linear control design for a boost converter using bond graphs." Proceedings of the Institution of Mechanical Engineers, Part I: Journal of Systems and Control Engineering 216, no. 1 (February 1, 2002): 1–11. http://dx.doi.org/10.1243/0959651021541363.

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The bond graph technique is applied to model a boost converter in order to derive an averaged model. The obtained averaged model is non-ideal as it takes into account most of the converter non-linearities introduced by power semiconductor devices. An ideal averaged model of the converter can be deduced easily for computing a non-linear control law in a real-time control context. The current-mode control of the boost converter is considered. The zero dynamics are studied by both classical theory and the bond graph approach. A modified version of a conventional nonlinear control law is proposed in order to improve the dynamic behaviour and to reduce the sensitivity to control model errors. The non-ideal averaged model is used firstly for simulation analyses of the proposed control law and then for comparison with experimental results.

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23

Kamar, Shazlin Shafiqah Shamsul, Syahrul Ashikin Azmi, and Zainuddin Mat Isa. "Performance Analysis of a Switched-Mode Flyback DC-DC Converter with Influence of Non-Ideal Switching Devices." IOP Conference Series: Earth and Environmental Science 1261, no. 1 (December 1, 2023): 012039. http://dx.doi.org/10.1088/1755-1315/1261/1/012039.

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Abstract This paper approach for the performance analysis of a dc-dc flyback converter for low power application. Modelling is done with parasitic components for non-ideal flyback converter. Ac and dc input characteristic of the flyback converter are analysed and investigated by PSIM simulations and calculations. The influence of parasitic effects in converter components on input characteristic is studied in continuous conduction mode (CCM). The results of the calculation based on analytical formula and averaged models are in a good accordance with PSIM simulations and calculation. The goal of this project is to compare an ideal and non-ideal condition in order to see the effect on the efficiency and ability of the converter to control the output voltage. The converter is expected to be operated in continuous conduction mode at all time and focus application is low power application that less than 100W.

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24

Ferraro, Elena, Marco Fanciulli, and Marco De Michielis. "Non-Ideal X-Gate and Z-Gate in Semiconducting Spin Qubit Implementations." Proceedings 12, no. 1 (November 19, 2019): 53. http://dx.doi.org/10.3390/proceedings2019012053.

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Several spin qubit architectures have been proposed, theoretically investigated and realized at least on the scale of single devices in view of quantum computation and simulation applications. We focus our study on five qubit types: quantum dot spin qubit, double quantum dot singlet-triplet qubit, double quantum dot hybrid qubit, donor qubit, quantum dot spin-donor qubit and for each one we derived a compact effective Hamiltonian. Single qubit gate fidelities when time interval error is included are compared. A realistic set of values for the error parameters of amplitude controls linked to the z and x contribution appearing in the Hamiltonian models has been used. This study provides a ranking of the gate fidelities for the different qubit architectures highlighting which one is the most robust with respect to the considered control noises.

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25

Wei, Jie, Yan Lei, Huimin Jia, Jiamei Cheng, Hongwei Hou, and Zhi Zheng. "Controlled in situ fabrication of Ag2O/AgO thin films by a dry chemical route at room temperature for hybrid solar cells." Dalton Trans. 43, no. 29 (2014): 11333–38. http://dx.doi.org/10.1039/c4dt00827h.

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26

Tang, Jiaqi, Jinglun Yang, Hui Yang, Rong Miao, Ruijuan Wen, Kaiqiang Liu, Junxia Peng, and Yu Fang. "Boronic ester-based dynamic covalent ionic liquid gels for self-healable, recyclable and malleable optical devices." Journal of Materials Chemistry C 6, no. 46 (2018): 12493–97. http://dx.doi.org/10.1039/c8tc03639j.

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27

Krause-Heuer, Anwen M., Maxine P. Grant, Nikita Orkey, and Janice R. Aldrich-Wright. "Drug Delivery Devices and Targeting Agents for Platinum(II) Anticancer Complexes." Australian Journal of Chemistry 61, no. 9 (2008): 675. http://dx.doi.org/10.1071/ch08157.

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An ideal platinum-based delivery device would be one that selectively targets cancerous cells, can be systemically delivered, and is non-toxic to normal cells. It would be beneficial to provide drug delivery devices for platinum-based anticancer agents that exhibit high drug transport capacity, good water solubility, stability during storage, reduced toxicity, and enhanced anticancer activity in vivo. However, the challenges for developing drug delivery devices include carrier stability in vivo, the method by which extracellular or intracellular drug release is achieved, overcoming the various mechanisms of cell resistance to drugs, controlled drug release to cancer cells, and platinum drug bioavailability. There are many potential candidates under investigation including cucurbit[n]urils, cyclodextrins, calix[n]arenes, and dendrimers, with the most promising being those that are synthetically adaptable enough to attach to targeting agents.

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28

Buhler, Rudolf T., Renato Giacomini, Marcelo Antonio Pavanello, and João Antonio Martino. "Fin Cross-Section Shape Influence on Short Channel Effects of MuGFETs." Journal of Integrated Circuits and Systems 7, no. 2 (December 27, 2012): 137–44. http://dx.doi.org/10.29292/jics.v7i2.366.

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Multiple-gate FETs is normally constructed on pre-etched silicon fins. These devices often present casual width variations along the silicon height; mostly caused by technological limitations of the fin definition process, due to non-ideal anisotropic etch. The resulting devices have, consequently, non-rectangular cross-sections, which can affect their electrical behavior. This work addresses the dependence of fin width non-uniformity on the occurrence of short-channel effects through comparative analysis, based on threedimensional numeric simulation of non-rectangular cross-section devices. The influence of the fin crosssection shape on electrical parameters showed to be dependent on channel length, becoming more sensible to the fin shape as the channel length is reduced, with better DC performance present on devices with bottom fin width smaller than top fin width due to the higher transconductance and lower output conductance, resulting on higher intrinsic voltage gain. For opposite fin shapes the total gate capacitance present higher values, beneficiating AC analog parameters, such as unit gain frequency.

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29

Ghaffar, Muzzamil, Shakil R. Sheikh, Noman Naseer, Zia Mohy Ud Din, Hafiz Zia Ur Rehman, and Muhammad Naved. "Non-Intrusive Load Monitoring of Buildings Using Spectral Clustering." Sensors 22, no. 11 (May 26, 2022): 4036. http://dx.doi.org/10.3390/s22114036.

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With widely deployed smart meters, non-intrusive energy measurements have become feasible, which may benefit people by furnishing a better understanding of appliance-level energy consumption. This work is a step forward in using graph signal processing for non-intrusive load monitoring (NILM) by proposing two novel techniques: the spectral cluster mean (SC-M) and spectral cluster eigenvector (SC-EV) methods. These methods use spectral clustering for extracting individual appliance energy usage from the aggregate energy profile of the building. After clustering the data, different strategies are employed to identify each cluster and thus the state of each device. The SC-M method identifies the cluster by comparing its mean with the devices’ pre-defined profiles. The SC-EV method employs an eigenvector resultant to locate the event and then recognize the device using its profile. An ideal dataset and a real-world REFIT dataset are used to test the performance of these two techniques. The f-measure score and disaggregation accuracy of the proposed techniques demonstrate that these two techniques are competitive and viable, with advantages of low complexity, high accuracy, no training data requirement, and fast processing time. Therefore, the proposed techniques are suitable candidates for NILM.

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30

D.Tuschel, David. "Micro-Raman Spectroscopy for the Characterization of Materials in Electronic and Photonic Devices." Microscopy and Microanalysis 3, S2 (August 1997): 843–44. http://dx.doi.org/10.1017/s1431927600011107.

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Materials characterization is the primary application of macro- and micro-Raman spectroscopy in our laboratory. Specifically, we wish to correlate chemical bonding and short to long range translational symmetry (including amorphous, highly oriented, polycrystalline, and single crystal materials) to physical, optical and electronic properties of materials and devices. Raman spectroscopy is particularly useful in this capacity because of its origin in the vibrational motions of chemically bonded atoms and its dependence upon crystal symmetry through the polarization selection rules. Furthermore, the high spatial resolution and non-destructive nature of micro-Raman spectroscopy make it ideal for in situcharacterization of electronic and photonic devices. We will present results of materials characterization studies, performed using macro- and micro-Raman spectroscopy, of electronic and photonic devices. In addition, we will discuss how the Raman polarization selection rules can be advantageously applied to device characterization.A primary area of investigation involves the study of ion-implanted and annealed Si by Raman spectroscopy.

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31

Liu, Shun-Wei, Wei-Cheng Su, Chih-Chien Lee, Chi-Feng Lin, and Chih-Hsien Yuan. "Limited Injection at Electrode/Organic Interface Induced Non-Ideal Diode Behavior in Planar Heterojunction Organic Photovoltaic Devices." Journal of The Electrochemical Society 159, no. 11 (2012): H871—H875. http://dx.doi.org/10.1149/2.039211jes.

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32

Stefanovych, T. O., and S. V. Shcherbovskykh. "Account of the errors of switching device for a system with 2-out-of-3 redundancy." Information extraction and processing 2017, no. 45 (December 26, 2017): 56–62. http://dx.doi.org/10.15407/vidbir2017.45.056.

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The mathematical reliability model is developed that takes into account the errors of the first and second type of switching device for a system with 2-out-of-3 redundancy. The proposed model is designed to determine the reliability characteristic. The system consists of three identical energy sources and two switching devices. It is assumed that the system is the non-renewable and the switching devices cannot return to their original state. A fault tree mathematically describes the reliability of the system in which the logical conditions for the mutual influence of the components of the system and switching devices are specified. At the first stage, the fault tree is constructed for the system with ideal switching devices, e. g. they operate instantly and do not allow errors. At the second stage, the features of creating a dynamic k-terminal fault tree are considered taking into account the errors of the first and second kind. It is shown that to describe the system it is necessary to take into account six dynamic phenomena. Based on the fault trees, Markov models for the systems are constructed. Using this model, it is analyzed how the errors of the first and second type of switching devices influence the reliability characteristic of the system.

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33

Rashid, Muhammad Haroon, Ants Koel, and Toomas Rang. "Simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes." Materials Science Forum 924 (June 2018): 302–5. http://dx.doi.org/10.4028/www.scientific.net/msf.924.302.

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In the last decade, silicon carbide (SiC) has gained a remarkable position among wide bandgap semiconductors due to its high temperature, high frequency, and high power electronics applications. SiC heterostructures, based on the most prominent polytypes like 3C-SiC, 4H-SiC and 6H-SiC, exhibit distinctive electrical and physical properties that make them promising candidates for high performance optoelectronic applications. The results of simulations of nn-junction 3C-4H/SiC and 6H-4H/SiC heterostructures, at the nanoscale and microscale, are presented in this paper. Nanoscale devices are simulated with QuantumWise Atomistix Toolkit (ATK) software, and microscale devices are simulated with Silvaco TCAD software. Current-voltage (IV) characteristics of nanoscale and microscale simulated devices are compared and discussed. The effects of non-ideal bonding at the heterojunction interface due to lattice misplacements (axial displacement of bonded wafers) are studied using the ATK simulator. These simulations lay the groundwork for the experiments, which are targeted to produce either a photovoltaic device or a light-emitting diode (working in the ultraviolet or terahertz spectra), by direct bonding of SiC polytypes.

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34

Rashid, Muhammad Haroon, Ants Koel, and Toomas Rang. "Nano- and Micro-Scale Simulations of Ge/3C-SiC and Ge/4H-SiC NN-Heterojunction Diodes." Materials Science Forum 1004 (July 2020): 490–96. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.490.

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During the last decade, silicon carbide (SiC) and its heterostructures with other semiconductors have gained a significant importance for wide range of electronics applications. These structures are highly suitable for high frequency and high power applications in extremely high temperature environments. SiC exists in more than 200 different polycrystalline forms, called polytypes. Among these 200 types, the most prominent polytypes with exceptional physical and electrical attributes are 3C-SiC, 4H-SiC and 6H-SiC. Heterostructures of these SiC polytypes with other conventional semiconductors (like Si, Ge) can give rise to interesting electronic characteristics. In this article, Germanium (Ge) has been used to make heterostructures with 3C-SiC and 4H-SiC using a novel technique called diffusion welding. Microscale and nanoscale simulations of nn-heterojunction of Ge/3C-SiC and Ge/4H-SiC have been done. Microscale devices have been simulated with a commercially available semiconductor device simulator tool called Silvaco TCAD. Whereas nanoscale devices have been simulated with QuantumWise Atomistix Toolkit (ATK) software package. Current-voltage (IV) curves of all simulated devices have been calculated and compared. In nanoscale device, the effects of defects on IV-characteristics due to non-ideal bonding (lattice misplacement) at heterojunction interface have been analyzed. Our simulation results reveal that the proposed heterostructure devices with diffusion welding of wafers are theoretically possible. These simulations are the preparations of our near future physical experiments targeted to fabricate SiC based heterostructure devices using diffusion bonding technique.

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Fafard, Simon, and Denis Masson. "Vertical Multi-Junction Laser Power Converters with 61% Efficiency at 30 W Output Power and with Tolerance to Beam Non-Uniformity, Partial Illumination, and Beam Displacement." Photonics 10, no. 8 (August 17, 2023): 940. http://dx.doi.org/10.3390/photonics10080940.

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Stable and reliable optical power converting devices are obtained using vertical multi-junction laser power converters. They are based on the GaAs and the InP material systems and are used for power-over-fiber or power-beaming applications. This study demonstrates that, in addition to providing the overall best conversion efficiencies with output voltages ideal for various applications, these semiconductor photovoltaic devices are very tolerant to beam non-uniformity, partial illumination, or beam displacement variations. Examples are given with two tight beams, each covering as little as ~7% of the cell area. An optical input power of 10 W was converted with still an efficiency of Eff ~59.4%. For an input power of 20 W, the illuminated area was set to ~22% without significantly affecting the conversion efficiency of Eff ~60%. Remarkably, for a beam diameter at ~65% of the chip length (i.e., covering ~35% of the chip area), a converted power of 29.5 W was obtained using a 12-junction GaAs device with a conversion efficiency of 61%. For a 10 junction InP-based device, an efficiency of Eff = 51.1% was obtained at an output voltage reaching as high as Voc = 5.954 V for an average optical intensity of 69 W/cm2 and an illumination area of ~57%.

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Sârbu, Annamaria, Marius Sârbu, and Cosmin Șumălan. "Non Wi-Fi Devices Interference Testing in a 2.4 GHz Wi-Fi Home." Land Forces Academy Review 23, no. 2 (June 1, 2018): 143–50. http://dx.doi.org/10.2478/raft-2018-0017.

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Abstract Operating in probably the most crowded radio frequency bandwidth, the 2.4 GHz Wi-Fi is still common in the majority of living environments. Besides having to face problems regarding co-channel and adjacent channel influence, Wi-Fi often coexists with other radio technologies operating in this bandwidth which makes it ideal for interference testing. In this article authors propose the use of freely available mobile applications to measure Wi-Fi signal spreading within a residential home as well as to quantify Wi-Fi performance in the presence of some commonly available interferers. A complete analysis of spectrum use is also provided by using a spectrum analyzer. We have found that Wi-Fi throughput degradation due to Bluetooth technology operated in the immediate vicinity of a mobile client is on average 26,5 % and decreases with distance from the Wi-Fi client. The presence of an active video baby monitor leads to a 7,5 % throughput degradation, but its functionality in heavy Wi-Fi traffic environment is however limited. The use of spectrograms in interference analysis is essential for a better understanding of the measured results.

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Vassalini, Irene, Ivano Alessandri, and Domenico de Ceglia. "Stimuli-Responsive Phase Change Materials: Optical and Optoelectronic Applications." Materials 14, no. 12 (June 19, 2021): 3396. http://dx.doi.org/10.3390/ma14123396.

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Stimuli-responsive materials offer a large variety of possibilities in fabrication of solid- state devices. Phase change materials (PCMs) undergo rapid and drastic changes of their optical properties upon switching from one crystallographic phase to another one. This peculiarity makes PCMs ideal candidates for a number of applications including sensors, active displays, photonic volatile and non-volatile memories for information storage and computer science and optoelectronic devices. This review analyzes different examples of PCMs, in particular germanium–antimonium tellurides and vanadium dioxide (VO2) and their applications in the above-mentioned fields, with a detailed discussion on potential, limitations and challenges.

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Lim, Sung Min. "Systematic Review Protocol for Sham Acupuncture Validation Research." Perspectives on Integrative Medicine 2, no. 2 (June 30, 2023): 131–33. http://dx.doi.org/10.56986/pim.2023.06.008.

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Background: Streitberger and Park sham needles have been developed and used as non-penetrating sham acupuncture needles that can be blinded in randomized controlled clinical trials assessing the efficacy of acupuncture. Ideal sham acupuncture should not be distinguishable from an actual acupuncture treatment provided to the experimental group to ensure patient blinding; additionally, it should not have any physiological or biological effect. Providing evidence for such sophisticated sham acupuncture devices is critical, as control settings in clinical studies are based on research verifying their validity.Methods: Three core electronic databases - PubMed, EMBASE, and the Cochrane Central Register of Controlled Trials - will be used to search for validity verification studies of sham acupuncture devices. Clinical studies that verify the validity of non-penetrating sham acupuncture devices will be included in the review.Results: The study design, participant information, experimental and control groups, study population’s experience with acupuncture, outcome variables, and results of studies that verify the validity of sham acupuncture devices will be systematically reviewed.Conclusion: This systematic review of validity verification studies of sham acupuncture devices is expected to help the development of more sophisticated sham acupuncture, as well as the design of studies verifying its validity in the future.

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Reutov, Aleksei, Andrey Tayduganov, Vladimir Mayboroda, and Oleg Fat’yanov. "Security of the Decoy-State BB84 Protocol with Imperfect State Preparation." Entropy 25, no. 11 (November 17, 2023): 1556. http://dx.doi.org/10.3390/e25111556.

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The quantum key distribution (QKD) allows two remote users to share a common information-theoretic secure secret key. In order to guarantee the security of a practical QKD implementation, the physical system has to be fully characterized and all deviations from the ideal protocol due to various imperfections of realistic devices have to be taken into account in the security proof. In this work, we study the security of the efficient decoy-state BB84 QKD protocol in the presence of the source flaws, caused by imperfect intensity and polarization modulation. We investigate the non-Poissonian photon-number statistics due to coherent-state intensity fluctuations and the basis-dependence of the source due to non-ideal polarization state preparation. The analysis is supported by the experimental characterization of intensity and phase distributions.

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Morgan, Adam, Ankan De, Haotao Ke, Xin Zhao, Kasunaidu Vechalapu, Douglas C. Hopkins, and Subhashish Bhattacharya. "A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000359–64. http://dx.doi.org/10.4071/isom-2015-wp17.

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The main motivation of this work is to design, fabricate, test, and compare an alternative, robust packaging approach for a power semiconductor current switch. Packaging a high voltage power semiconductor current switch into a single power module, compared to using separate power modules, offers cost, performance, and reliability advantages. With the advent of Wide-Bandgap (WBG) semiconductors, such as Silicon-Carbide, singular power electronic devices, where a device is denoted as a single transistor or rectifier unit on a chip, can now operate beyond 10kV–15kV levels and switch at frequencies within the kHz range. The improved voltage blocking capability reduces the number of series connected devices within the circuit, but challenges power module designers to create packages capable of managing the electrical, mechanical, and thermal stresses produced during operation. The non-sinusoidal nature of this stress punctuated with extremely fast changes in voltage and current, with respect to time, leads to non-ideal electrical and thermal performance. An optimized power semiconductor series current switch is fabricated using an IGBT (6500V/25A die) and SiC JBS Diode (6000V/10A), packaged into a 3D printed housing, to create a composite series current switch package (CSCSP). The final chosen device configuration was simulated and verified in an ANSYS software package. Also, the thermal behavior of such a composite package was simulated and verified using COMSOL. The simulated results were then compared with empirically obtained data, in order to ensure that the thermal ratings of the power devices were not exceeded; directly affecting the maximum attainable frequency of operation for the CSCSP. Both power semiconductor series current switch designs are tested and characterized under hard switching conditions. Special attention is given to ensure the voltage stress across the devices is significantly reduced.

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Qiu, Qiu-Ling, Shi-Xu Yang, Qian-Shu Wu, Cheng-Lang Li, Qi Zhang, Jin-Wei Zhang, Zhen-Xing Liu, Yuan-Tao Zhang, and Yang Liu. "Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction." Chinese Physics B 31, no. 4 (March 1, 2022): 047103. http://dx.doi.org/10.1088/1674-1056/ac4746.

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The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-light-emitting diodes (white LEDs), high electron mobility transistors (HEMTs), and GaN polarization superjunctions. However, the current researches on the polarization mechanism of GaN-based materials are not sufficient. In this paper, we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design (TCAD) simulation. The self-screening effect in Ga-face bulk GaN under ideal and non-ideal conditions is studied respectively. We believe that the formation of high-density two-dimensional electron gas (2DEG) in GaN is the accumulation of screening charges. We also clarify the source and accumulation of the screening charges caused by the GaN self-screening effect in this paper and aim to guide the design and optimization of high-performance GaN-based devices.

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Falter, Maarten, Martijn Scherrenberg, and Paul Dendale. "Digital Health in Cardiac Rehabilitation and Secondary Prevention: A Search for the Ideal Tool." Sensors 21, no. 1 (December 22, 2020): 12. http://dx.doi.org/10.3390/s21010012.

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Digital health is becoming more integrated in daily medical practice. In cardiology, patient care is already moving from the hospital to the patients’ homes, with large trials showing positive results in the field of telemonitoring via cardiac implantable electronic devices (CIEDs), monitoring of pulmonary artery pressure via implantable devices, telemonitoring via home-based non-invasive sensors, and screening for atrial fibrillation via smartphone and smartwatch technology. Cardiac rehabilitation and secondary prevention are modalities that could greatly benefit from digital health integration, as current compliance and cardiac rehabilitation participation rates are low and optimisation is urgently required. This viewpoint offers a perspective on current use of digital health technologies in cardiac rehabilitation, heart failure and secondary prevention. Important barriers which need to be addressed for implementation in medical practice are discussed. To conclude, a future ideal digital tool and integrated healthcare system are envisioned. To overcome personal, technological, and legal barriers, technological development should happen in dialog with patients and caregivers. Aided by digital technology, a future could be realised in which we are able to offer high-quality, affordable, personalised healthcare in a patient-centred way.

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Poole, Ruth Louise, Susan Myles, and Grace Carolan-Rees. "VP18 Potential Of Real World Evidence For ‘IDEAL’ Procedures Research." International Journal of Technology Assessment in Health Care 35, S1 (2019): 79–80. http://dx.doi.org/10.1017/s0266462319002940.

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IntroductionRandomized trials and similarly robust research methods generate evidence in carefully controlled settings, often with strict inclusion criteria. But patients in the ‘real world’ often have multiple comorbidities, and treatments are delivered within diverse environments. Trials are also difficult to fund, and rarely collect longitudinal data. Because of these, and other limitations, researchers are increasingly recognizing the inherent value of real world evidence (RWE). This is not only true for pharmaceutical products, and may have even more relevance in the evaluation of complex interventional procedures and non-medicines healthcare technologies. The Idea, Development, Exploration, Assessment, Learning (IDEAL) Framework guides the developmental ‘pipeline’ of surgical (and other) procedures, as well as medical device research (IDEAL-D). IDEAL informs the production of high-quality evidence of safety and effectiveness, but there is potential to further expand its applications.MethodsOur aim is to investigate the feasibility of using of RWE alongside the IDEAL Framework in the assessment of procedures and devices. Methodological experts from the IDEAL Collaboration, HTA agencies and other healthcare research organisations are contributing their unique perspectives and experiences to explore these methods. As part of this work, Cedar Healthcare Technology Research Centre (Cedar) has attempted to retrospectively apply the IDEAL criteria to a series of RWE projects conducted on behalf of the National Institute for Health and Care Excellence (NICE) Interventional Procedures and Medical Technologies Evaluation Programmes.ResultsCedar's experience indicates that there may be options for using retrospective routinely-collected linked data and other existing sources to address some of the requirements of IDEAL. Likewise, the IDEAL Framework is expected to be a helpful reference when designing new databases and clinical registries for prospective collection of relevant and informative evidence. Examples from several projects will be shared at the Health Technology Assessment International (HTAi) conference.ConclusionsInitial signs are that there are likely to be a number of ways in which IDEAL and RWE could complement one another.

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Coyle, Brian, Elham Kashefi, and Matty J. Hoban. "Certified Randomness From Steering Using Sequential Measurements." Cryptography 3, no. 4 (December 6, 2019): 27. http://dx.doi.org/10.3390/cryptography3040027.

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The generation of certifiable randomness is one of the most promising applications of quantum technologies. Furthermore, the intrinsic non-locality of quantum correlations allow us to certify randomness in a device-independent way, i.e., we do not need to make assumptions about the devices used. Due to the work of Curchod et al. a single entangled two-qubit pure state can be used to produce arbitrary amounts of certified randomness. However, the obtaining of this randomness is experimentally challenging as it requires a large number of measurements, both projective and general. Motivated by these difficulties in the device-independent setting, we instead consider the scenario of one-sided device independence where certain devices are trusted, and others are not; a scenario motivated by asymmetric experimental set-ups such as ion-photon networks. We show how certain aspects of previous works can be adapted to this scenario and provide theoretical bounds on the amount of randomness that can be certified. Furthermore, we give a protocol for unbounded randomness certification in this scenario, and provide numerical results demonstrating the protocol in the ideal case. Finally, we numerically test the possibility of implementing this scheme on near-term quantum technologies, by considering the performance of the protocol on several physical platforms.

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Giannazzo, Filippo, Patrick Fiorenza, E. Schiliro, Salvatore Di Franco, Sylvain Monnoye, Hugues Mank, Marcin Zielinski, Francesco La Via та Fabrizio Roccaforte. "Electrical Scanning Probe Microscopy Investigation of Schottky and Metal-Oxide Junctions on Hetero-Epitaxial 3C-SiС on Silicon". Materials Science Forum 1062 (31 травня 2022): 400–405. http://dx.doi.org/10.4028/p-cl40be.

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This paper presents a macro-and nanoscale electrical investigation of Schottky and metal-oxide junctions with hetero-epitaxial 3C-SiC layers grown on Si. Statistical current-density-voltage (J-V) characterization of Pt/3C-SiC Schottky diodes showed an increase of the reverse leakage current with increasing the devices diameters. Furthermore, C-V and J-V analyses of SiO2/3C-SiC capacitors revealed non-idealities of the thermal oxide, such as a high trapped positive charge (3×1012 cm−2) and a reduced breakdown field (EBD=6.5 MV/cm) compared to ideal SiO2. Nanoscale electrical characterizations by conductive atomic force microscopy (CAFM) and scanning capacitance microscopy (SCM) allowed to shed light on the origin of non-ideal behavior of Schottky and thermal oxide junctions, by correlating the morphological features associated to 3C-SiC crystalline defects with local current transport and carrier density.

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Khandare, Jayant, Alain D'Souza, Smriti Arora, Balram Singh, Gourishankar Aland, Narendra Kale, Isha Gore, et al. "Extracorporeal microchannel device to capture and eliminate circulating tumor cells from cancer patient’s blood." Journal of Clinical Oncology 40, no. 16_suppl (June 1, 2022): e14522-e14522. http://dx.doi.org/10.1200/jco.2022.40.16_suppl.e14522.

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e14522 Background: Metastatic progression accounts for nearly 90% of cancer-related deaths and has been directly correlated with the presence of circulating tumor cells (CTCs) in numerous carcinomas including breast, lung, ovarian, colorectal, and head and neck cancers. The removal of CTCs from cancer patient’s blood is directly implicated with reduction of extravasation and disease invasiveness to secondary organs. Methods: We designed and printed 3 Dimensional (3D) microchannel devices using biocompatible polymer and packed it with anti-EpCAM (EpCAM) mediated glass-based (G) compositions (G-EpCAM). The computational fluid dynamic (CFD) analysis simulation was explored to optimize the hemodynamic effect of the G-EpCAM device for measuring the pressure and velocity difference for blood along the spiral flow microchannels. Red blood cell (RBC) hemolysis was estimated using G-EpCAM compositions packed in a device to determine optimal biocompatibility. We assessed cancer cell lines (breast cancer MCF7, lung cancer A549) interactions and capture with varying incubation time points, effect of anti-EpCAM concentrations, number of G-EpCAMs, and series of devices. We evaluated G-EpCAM-on-device’s CTC capture capability and biocompatibility using head and neck, colorectal, lung, and ductal breast cancer patient’s blood samples. All G-EpCAM captured CTCs were immuno-stained for cytokeratin 18 (CK18) expression and the optimal fluorescence acquisition intensity was quantified. Results: Extracorporeal G-EpCAM microchannel device was 3D printed and consisted of interlocking top lid and bottom base with inlet and outlet channels. The path length of the spiral device consisted of 20 microchannels with 6.0-feet length. Device accommodated 28 gm of non-hemolytic G-EpCAM compositions. CFD analysis showed 3.8 mm as the ideal channel diameter and 2mm as the superlative G-EpCAM diameter for maximal cells and CTC capture with minimal blood hemolysis (less than 1%) as compared to control. Series 1 and 2 device indicated 90% and 85% cell capture efficiency, respectively using G-EpCAM devices indicating highest interactions and efficiency with cells. Conversely, the first device in series captured the highest cells. In addition, the efficiency improved as the number of G-EpCAM compositions was increased. We accounted device to capture CTCs with specificity having G-EpCAM composition and observed no hemolysis and non-specific interactions with other blood cells like RBCs or leukocytes. Conclusions: Continuous CTC removal from cancer patient’s blood circulation using such device offers promising therapeutic utility in stemming aggressive metastatic invasion and progression for improving the overall survival of epithelial origin cancer patients. Clinical trial information: CTRI U1111/1192-3951.

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Khandare, Jayant, Alain D'Souza, Smriti Arora, Balram Singh, Gourishankar Aland, Narendra Kale, Isha Gore, et al. "Extracorporeal microchannel device to capture and eliminate circulating tumor cells from cancer patient’s blood." Journal of Clinical Oncology 40, no. 16_suppl (June 1, 2022): e14522-e14522. http://dx.doi.org/10.1200/jco.2022.40.16_suppl.e14522.

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e14522 Background: Metastatic progression accounts for nearly 90% of cancer-related deaths and has been directly correlated with the presence of circulating tumor cells (CTCs) in numerous carcinomas including breast, lung, ovarian, colorectal, and head and neck cancers. The removal of CTCs from cancer patient’s blood is directly implicated with reduction of extravasation and disease invasiveness to secondary organs. Methods: We designed and printed 3 Dimensional (3D) microchannel devices using biocompatible polymer and packed it with anti-EpCAM (EpCAM) mediated glass-based (G) compositions (G-EpCAM). The computational fluid dynamic (CFD) analysis simulation was explored to optimize the hemodynamic effect of the G-EpCAM device for measuring the pressure and velocity difference for blood along the spiral flow microchannels. Red blood cell (RBC) hemolysis was estimated using G-EpCAM compositions packed in a device to determine optimal biocompatibility. We assessed cancer cell lines (breast cancer MCF7, lung cancer A549) interactions and capture with varying incubation time points, effect of anti-EpCAM concentrations, number of G-EpCAMs, and series of devices. We evaluated G-EpCAM-on-device’s CTC capture capability and biocompatibility using head and neck, colorectal, lung, and ductal breast cancer patient’s blood samples. All G-EpCAM captured CTCs were immuno-stained for cytokeratin 18 (CK18) expression and the optimal fluorescence acquisition intensity was quantified. Results: Extracorporeal G-EpCAM microchannel device was 3D printed and consisted of interlocking top lid and bottom base with inlet and outlet channels. The path length of the spiral device consisted of 20 microchannels with 6.0-feet length. Device accommodated 28 gm of non-hemolytic G-EpCAM compositions. CFD analysis showed 3.8 mm as the ideal channel diameter and 2mm as the superlative G-EpCAM diameter for maximal cells and CTC capture with minimal blood hemolysis (less than 1%) as compared to control. Series 1 and 2 device indicated 90% and 85% cell capture efficiency, respectively using G-EpCAM devices indicating highest interactions and efficiency with cells. Conversely, the first device in series captured the highest cells. In addition, the efficiency improved as the number of G-EpCAM compositions was increased. We accounted device to capture CTCs with specificity having G-EpCAM composition and observed no hemolysis and non-specific interactions with other blood cells like RBCs or leukocytes. Conclusions: Continuous CTC removal from cancer patient’s blood circulation using such device offers promising therapeutic utility in stemming aggressive metastatic invasion and progression for improving the overall survival of epithelial origin cancer patients. Clinical trial information: CTRI U1111/1192-3951.

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Pancera, Elena, Jens Timmermann, Thomas Zwick, and Werner Wiesbeck. "Spectrum optimization in ultra-wideband systems." International Journal of Microwave and Wireless Technologies 2, no. 2 (April 2010): 203–9. http://dx.doi.org/10.1017/s1759078710000310.

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In this paper the non-ideal and frequency-dependent behavior of the hardware components of the ultra-wideband (UWB) transmitter RF-front end is analyzed. Both digital and analytical methods to compensate for this frequency-dependent behavior are investigated, in order to optimize the radiated wave, so that its spectrum perfectly matches the given mask. An example of spectral system optimization with analog devices is shown and verified through measurement results.

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Javid, Babayev, and Sadikhova Sayyara. "The Most Ideal L2 Teaching Method." International Journal of Religion 5, no. 7 (May 8, 2024): 367–78. http://dx.doi.org/10.61707/nh76fk58.

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Though it is possible to see numerous researches on the so-called language teaching methods, there is still a pressing need to study them comparatively and from different angles. The article studies some specific methods with regard to covering language skills, mother tongue usage, usage of cutting-edge technological devices, comprehensibility gain. Besides, there is a strong focus on the conduction of the lesson regarding whether the lesson is student-centered, teacher-centered or self-centered. The aim of the article is to reveal the best language learning method combining the positive features of all language learning criteria. In the study, 20 local and foreign non-English speaking students with B1 level were involved in the experiment. They were divided into four groups which learnt English through a specific method. Most of the participants were locals except 6 who were of Turkish and Iranian origins. Speaking skill of the Iranian students was relatively better in comparison with others. At the end of the experiment, the comprehensibility gain of each group was graded accordingly. The Uniskills method proved to be the most effective and qualitative method compared to other methods in terms of coverage of language skills. The second effective method was CLT which also encompassed all four skills. It was revealed that the usage of mother tongue in English language learning is better than not using it. Since language input makes progress while using native language. Comparing the source and target languages makes a clear picture of language structure in the brain. Operation function is activated and cognitive skills develop significantly. It turned out that the usage of mother tongue in language learning is more effective and the students find the meanings of some unknown words obscure when they don’t use the native language. It became obvious that teacher-centered lesson is more efficient than the student-centered education.

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Kim, Jangsaeng, Dongseok Kwon, Sung Yun Woo, Won-Mook Kang, Soochang Lee, Seongbin Oh, Chul-Heung Kim, Jong-Ho Bae, Byung-Gook Park, and Jong-Ho Lee. "On-chip trainable hardware-based deep Q-networks approximating a backpropagation algorithm." Neural Computing and Applications 33, no. 15 (February 10, 2021): 9391–402. http://dx.doi.org/10.1007/s00521-021-05699-z.

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AbstractReinforcement learning (RL) using deep Q-networks (DQNs) has shown performance beyond the human level in a number of complex problems. In addition, many studies have focused on bio-inspired hardware-based spiking neural networks (SNNs) given the capabilities of these technologies to realize both parallel operation and low power consumption. Here, we propose an on-chip training method for DQNs applicable to hardware-based SNNs. Because the conventional backpropagation (BP) algorithm is approximated, a performance evaluation based on two simple games shows that the proposed system achieves performance similar to that of a software-based system. The proposed training method can minimize memory usage and reduce power consumption and area occupation levels. In particular, for simple problems, the memory dependency can be significantly reduced given that high performance is achieved without using replay memory. Furthermore, we investigate the effect of the nonlinearity characteristics and two types of variation of non-ideal synaptic devices on the performance outcomes. In this work, thin-film transistor (TFT)-type flash memory cells are used as synaptic devices. A simulation is also conducted using fully connected neural network with non-leaky integrated-and-fire (I&F) neurons. The proposed system shows strong immunity to device variations because an on-chip training scheme is adopted.

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